<?xml version="1.0" encoding="utf-8"?>
<export-example>
  <doc>
    <id>5045</id>
    <completedYear/>
    <publishedYear>2009</publishedYear>
    <thesisYearAccepted/>
    <language>eng</language>
    <pageFirst>43</pageFirst>
    <pageLast>46</pageLast>
    <pageNumber/>
    <edition/>
    <issue/>
    <volume/>
    <type>conferenceobject</type>
    <publisherName>IEEE</publisherName>
    <publisherPlace>Piscataway, NJ</publisherPlace>
    <creatingCorporation/>
    <contributingCorporation/>
    <belongsToBibliography>0</belongsToBibliography>
    <completedDate>2011-02-11</completedDate>
    <publishedDate>--</publishedDate>
    <thesisDateAccepted>--</thesisDateAccepted>
    <title language="eng">The stability of C60 and its derivatives upon handling in microsystems technologies</title>
    <parentTitle language="eng">International Students and Young Scientists Workshop "Photonics and Microsystems", 2009, 25 - 27 June 2009, Harz University, Wernigerode, Germany</parentTitle>
    <identifier type="isbn">978-1-4244-4303-1</identifier>
    <enrichment key="UBICOIdent">005874</enrichment>
    <author>
      <firstName>Jolanta</firstName>
      <lastName>Klocek</lastName>
    </author>
    <submitter>
      <firstName>...</firstName>
      <lastName>Administrator</lastName>
    </submitter>
    <author>
      <firstName>Daniel</firstName>
      <lastName>Friedrich</lastName>
    </author>
    <author>
      <firstName>Dieter</firstName>
      <lastName>Schmeißer</lastName>
    </author>
    <author>
      <firstName>Michael</firstName>
      <lastName>Hecker</lastName>
    </author>
    <author>
      <firstName>Ehrenfried</firstName>
      <lastName>Zschech</lastName>
    </author>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>c60</value>
    </subject>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>derivatices</value>
    </subject>
    <collection role="old_institute" number="01005">LS Angewandte Physik / Sensorik</collection>
    <collection role="institutes" number="1503">FG Angewandte Physik und Halbleiterspektroskopie</collection>
  </doc>
  <doc>
    <id>6348</id>
    <completedYear/>
    <publishedYear>2010</publishedYear>
    <thesisYearAccepted/>
    <language>eng</language>
    <pageFirst>39</pageFirst>
    <pageLast>43</pageLast>
    <pageNumber/>
    <edition/>
    <issue/>
    <volume/>
    <type>conferenceobject</type>
    <publisherName>IEEE</publisherName>
    <publisherPlace>Piscataway, NJ</publisherPlace>
    <creatingCorporation/>
    <contributingCorporation/>
    <belongsToBibliography>0</belongsToBibliography>
    <completedDate>2011-11-18</completedDate>
    <publishedDate>--</publishedDate>
    <thesisDateAccepted>--</thesisDateAccepted>
    <title language="eng">Fullerene based materials for ultra-low-k application</title>
    <parentTitle language="eng">International Students and Young Scientists Workshop "Photonics and Microsystems", Szklarska, Poreba, Poland, 25 - 27 June 2010</parentTitle>
    <identifier type="isbn">978-1-4244-8324-2</identifier>
    <enrichment key="UBICOIdent">007306</enrichment>
    <author>
      <firstName>K.</firstName>
      <lastName>Broczkowska</lastName>
    </author>
    <submitter>
      <firstName>...</firstName>
      <lastName>Administrator</lastName>
    </submitter>
    <author>
      <firstName>Jolanta</firstName>
      <lastName>Klocek</lastName>
    </author>
    <author>
      <firstName>Daniel</firstName>
      <lastName>Friedrich</lastName>
    </author>
    <author>
      <firstName>Karsten</firstName>
      <lastName>Henkel</lastName>
    </author>
    <author>
      <firstName>Krzysztof</firstName>
      <lastName>Kolanek</lastName>
    </author>
    <author>
      <firstName>A.</firstName>
      <lastName>Urbanowicz</lastName>
    </author>
    <author>
      <firstName>Dieter</firstName>
      <lastName>Schmeißer</lastName>
    </author>
    <author>
      <firstName>M.</firstName>
      <lastName>Miller</lastName>
    </author>
    <author>
      <firstName>Ehrenfried</firstName>
      <lastName>Zschech</lastName>
    </author>
    <collection role="old_institute" number="01005">LS Angewandte Physik / Sensorik</collection>
    <collection role="institutes" number="1503">FG Angewandte Physik und Halbleiterspektroskopie</collection>
  </doc>
  <doc>
    <id>13824</id>
    <completedYear/>
    <publishedYear>2010</publishedYear>
    <thesisYearAccepted/>
    <language>eng</language>
    <pageFirst>S. 231</pageFirst>
    <pageLast/>
    <pageNumber/>
    <edition/>
    <issue/>
    <volume/>
    <type>conferenceobject</type>
    <publisherName>Deutsche Physikalische Gesellschaft</publisherName>
    <publisherPlace>Bad Honnef</publisherPlace>
    <creatingCorporation/>
    <contributingCorporation/>
    <belongsToBibliography>0</belongsToBibliography>
    <completedDate>2015-02-20</completedDate>
    <publishedDate>--</publishedDate>
    <thesisDateAccepted>--</thesisDateAccepted>
    <title language="eng">Spectroscopic investigations of interaction between C60 fullerene and nitrogen atom from amine group</title>
    <abstract language="eng">We investigated interactions between fullerene molecule and amine group from 3-aminopropyl-trimethoxysilane (3AT). Theoretical calculations show that the material obtained as a result of interactions between 3AT and C60 fullerene may have extremely low dielectric constant around 1.6, so it could be considered as a candidate for ultra low-k (ULK) material applications. We prepared films composed of 3AT and fullerene by using two preparation techniques: spin-coating and evaporation. Interactions between these two components were investigated by using X- ray photoelectron spectroscopy (XPS) and Near Edge X-ray Absorption Fine Structure Spectroscopy (NEXAFS). We found that there are strong chemical reactions between the nucleophilic nitrogen atom from 3AT and electrophilic fullerene molecule. Results of NEXAFS measurements suggest that due to direct interactions between 3AT and C60 the shape of fullerene molecule is changed.</abstract>
    <parentTitle language="eng">Verhandlungen der Deutschen Physikalischen Gesellschaft, Reihe 6, Bd. 45</parentTitle>
    <identifier type="issn">0420-0195</identifier>
    <identifier type="url">http://www.dpg-verhandlungen.de/year/2010/conference/regensburg/part/ds/session/23/contribution/1</identifier>
    <enrichment key="BTU">an der BTU erstellt / created at BTU</enrichment>
    <author>
      <firstName>Jolanta</firstName>
      <lastName>Klocek</lastName>
    </author>
    <submitter>
      <firstName>Karsten</firstName>
      <lastName>Henkel</lastName>
    </submitter>
    <author>
      <firstName>Daniel</firstName>
      <lastName>Friedrich</lastName>
    </author>
    <author>
      <firstName>Kostyantyn</firstName>
      <lastName>Zagorodniy</lastName>
    </author>
    <author>
      <firstName>Dieter</firstName>
      <lastName>Schmeißer</lastName>
    </author>
    <collection role="old_institute" number="01005">LS Angewandte Physik / Sensorik</collection>
    <collection role="institutes" number="1503">FG Angewandte Physik und Halbleiterspektroskopie</collection>
  </doc>
  <doc>
    <id>13807</id>
    <completedYear/>
    <publishedYear>2009</publishedYear>
    <thesisYearAccepted/>
    <language>eng</language>
    <pageFirst>S. 145</pageFirst>
    <pageLast/>
    <pageNumber/>
    <edition/>
    <issue/>
    <volume/>
    <type>conferenceobject</type>
    <publisherName>Deutsche Physikalische Gesellschaft</publisherName>
    <publisherPlace>Bad Honnef</publisherPlace>
    <creatingCorporation/>
    <contributingCorporation/>
    <belongsToBibliography>0</belongsToBibliography>
    <completedDate>2015-02-20</completedDate>
    <publishedDate>--</publishedDate>
    <thesisDateAccepted>--</thesisDateAccepted>
    <title language="eng">Study of C60 based films formation by NEXAFS</title>
    <abstract language="eng">The C60 fullerenes and some of its -OH, -CF3 and -Cl derivates are candidates for application as ultra-low-k insulators in the semiconductor industry. Future preparation of thin films based on these materials requires the stability of the substituted fullerenes against chemical handling and processing steps. The latter issue was addressed by our NEXAFS studies that were done by synchrotron radiation at the beam line U49/2-PGM2 at BESSY II. Performed were the C K-edge NEXAFS studies in total fluorescence and total electron yield modes. The C60 based films were deposited on silicon by spraying from solutions. The influence of the different substitutional groups with C60 molecules was studied. The data were compared to the reference spectra of a pure C60 film. For C60(OH)24, C60-Cl2 and C60(CF3)12 a variance of the intensity of the π*-resonance as well as shift to higher energies of 0.5 eV (-OH), 0.6 eV (-F), 0.7 eV (-Cl) were observed. The results confirm the necessary stability of the used C60 derivatives and shall be used for optimization of the film deposition chemistry and conditions.</abstract>
    <parentTitle language="deu">Verhandlungen der Deutschen Physikalischen Gesellschaft, Reihe 6, Bd. 44</parentTitle>
    <identifier type="issn">0420-0195</identifier>
    <enrichment key="BTU">an der BTU erstellt / created at BTU</enrichment>
    <author>
      <firstName>Daniel</firstName>
      <lastName>Friedrich</lastName>
    </author>
    <submitter>
      <firstName>Karsten</firstName>
      <lastName>Henkel</lastName>
    </submitter>
    <author>
      <firstName>Marcel</firstName>
      <lastName>Michling</lastName>
    </author>
    <author>
      <firstName>Jolanta</firstName>
      <lastName>Klocek</lastName>
    </author>
    <author>
      <firstName>Dieter</firstName>
      <lastName>Schmeißer</lastName>
    </author>
    <author>
      <firstName>Stas</firstName>
      <lastName>Avdoshenko</lastName>
    </author>
    <author>
      <firstName>Dmytro</firstName>
      <lastName>Chumakov</lastName>
    </author>
    <author>
      <firstName>Ehrenfried</firstName>
      <lastName>Zschech</lastName>
    </author>
    <collection role="old_institute" number="01005">LS Angewandte Physik / Sensorik</collection>
    <collection role="institutes" number="1503">FG Angewandte Physik und Halbleiterspektroskopie</collection>
  </doc>
</export-example>
