<?xml version="1.0" encoding="utf-8"?>
<export-example>
  <doc>
    <id>3672</id>
    <completedYear/>
    <publishedYear>2007</publishedYear>
    <thesisYearAccepted/>
    <language>eng</language>
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    <pageLast/>
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    <contributingCorporation/>
    <belongsToBibliography>0</belongsToBibliography>
    <completedDate>2007-08-22</completedDate>
    <publishedDate>--</publishedDate>
    <thesisDateAccepted>--</thesisDateAccepted>
    <title language="eng">Al-oxynitride buffer layer facilities for PrOx/SiC interfaces</title>
    <enrichment key="UBICOIdent">004394</enrichment>
    <enrichment key="UBICOquelle">MRS Proceedings 996, 2007, H05-23</enrichment>
    <author>
      <firstName>Karsten</firstName>
      <lastName>Henkel</lastName>
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    <submitter>
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      <lastName>Administrator</lastName>
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    <author>
      <firstName>Rakesh</firstName>
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    <author>
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      <lastName>Schmeißer</lastName>
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    <author>
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    <author>
      <firstName>Yevgen</firstName>
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    <author>
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    <collection role="old_institute" number="01005">LS Angewandte Physik / Sensorik</collection>
    <collection role="institutes" number="1503">FG Angewandte Physik und Halbleiterspektroskopie</collection>
  </doc>
  <doc>
    <id>3673</id>
    <completedYear/>
    <publishedYear>2007</publishedYear>
    <thesisYearAccepted/>
    <language>eng</language>
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    <completedDate>2007-08-22</completedDate>
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    <title language="eng">Organic field effect transistors with ferroelectric hysteresis</title>
    <enrichment key="UBICOIdent">004395</enrichment>
    <enrichment key="UBICOquelle">Thin Solid Films 515(2007)19, S. 7683 - 7687, 0040-6090</enrichment>
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      <lastName>Müller</lastName>
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      <lastName>Administrator</lastName>
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    <author>
      <firstName>Karsten</firstName>
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    <author>
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    <collection role="old_institute" number="01005">LS Angewandte Physik / Sensorik</collection>
    <collection role="institutes" number="1503">FG Angewandte Physik und Halbleiterspektroskopie</collection>
  </doc>
  <doc>
    <id>3805</id>
    <completedYear/>
    <publishedYear>2008</publishedYear>
    <thesisYearAccepted/>
    <language>eng</language>
    <pageFirst/>
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    <completedDate>2008-06-20</completedDate>
    <publishedDate>--</publishedDate>
    <thesisDateAccepted>--</thesisDateAccepted>
    <title language="eng">Microscopic and Spectroscopic Characterization of Interfaces and Dielectric Layers for OFET Devices</title>
    <enrichment key="UBICOIdent">004535</enrichment>
    <enrichment key="UBICOquelle">Physica Status Solidi : A 205(2008)3, S. 600-611, 1862-6300</enrichment>
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    <collection role="institutes" number="1503">FG Angewandte Physik und Halbleiterspektroskopie</collection>
  </doc>
  <doc>
    <id>3806</id>
    <completedYear/>
    <publishedYear>2008</publishedYear>
    <thesisYearAccepted/>
    <language>eng</language>
    <pageFirst/>
    <pageLast/>
    <pageNumber/>
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    <completedDate>2008-06-20</completedDate>
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    <title language="eng">Al-Oxynitride Interfacial Layer Investigations for PrxOy on SiC and Si</title>
    <enrichment key="UBICOIdent">004536</enrichment>
    <enrichment key="UBICOquelle">Journal of Physics : Conference series 94(2008) 012004, 1742-6588</enrichment>
    <author>
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    <author>
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      <firstName>Carola</firstName>
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    <author>
      <firstName>Konstantin</firstName>
      <lastName>Karavaev</lastName>
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    <collection role="old_institute" number="01005">LS Angewandte Physik / Sensorik</collection>
    <collection role="institutes" number="1503">FG Angewandte Physik und Halbleiterspektroskopie</collection>
  </doc>
  <doc>
    <id>5024</id>
    <completedYear/>
    <publishedYear>2011</publishedYear>
    <thesisYearAccepted/>
    <language>eng</language>
    <pageFirst/>
    <pageLast/>
    <pageNumber/>
    <edition/>
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    <type>articler</type>
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    <belongsToBibliography>0</belongsToBibliography>
    <completedDate>2011-02-10</completedDate>
    <publishedDate>--</publishedDate>
    <thesisDateAccepted>--</thesisDateAccepted>
    <title language="eng">Pr-O-Al-N dielectrics for metal insulator semiconductor stacks</title>
    <enrichment key="UBICOIdent">005848</enrichment>
    <enrichment key="UBICOquelle">Physica Status Solidi A 208(2011)2, S. 317-329, 1521-396X</enrichment>
    <author>
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      <lastName>Henkel</lastName>
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    <submitter>
      <firstName>...</firstName>
      <lastName>Administrator</lastName>
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    <author>
      <firstName>Mohamed</firstName>
      <lastName>Torche</lastName>
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    <author>
      <firstName>Rakesh</firstName>
      <lastName>Sohal</lastName>
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    <author>
      <firstName>Konstantin</firstName>
      <lastName>Karavaev</lastName>
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    <author>
      <firstName>Yevgen</firstName>
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    <author>
      <firstName>Carola</firstName>
      <lastName>Schwiertz</lastName>
    </author>
    <author>
      <firstName>Dieter</firstName>
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    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>semiconductor</value>
    </subject>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>dielectric</value>
    </subject>
    <collection role="old_institute" number="01005">LS Angewandte Physik / Sensorik</collection>
    <collection role="institutes" number="1503">FG Angewandte Physik und Halbleiterspektroskopie</collection>
  </doc>
  <doc>
    <id>5028</id>
    <completedYear/>
    <publishedYear>2011</publishedYear>
    <thesisYearAccepted/>
    <language>eng</language>
    <pageFirst/>
    <pageLast/>
    <pageNumber/>
    <edition/>
    <issue/>
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    <type>articler</type>
    <publisherName/>
    <publisherPlace/>
    <creatingCorporation/>
    <contributingCorporation/>
    <belongsToBibliography>0</belongsToBibliography>
    <completedDate>2011-02-11</completedDate>
    <publishedDate>--</publishedDate>
    <thesisDateAccepted>--</thesisDateAccepted>
    <title language="eng">Spin coated organic ferroelectric films for non volatile memories</title>
    <enrichment key="UBICOIdent">005857</enrichment>
    <enrichment key="UBICOquelle">Physica Status Solidi : A 208(2011)2, S. 330-342, 1521-396X</enrichment>
    <author>
      <firstName>Klaus</firstName>
      <lastName>Müller</lastName>
    </author>
    <submitter>
      <firstName>...</firstName>
      <lastName>Administrator</lastName>
    </submitter>
    <author>
      <firstName>Karsten</firstName>
      <lastName>Henkel</lastName>
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    <author>
      <firstName>Dipankar</firstName>
      <lastName>Mandal</lastName>
    </author>
    <author>
      <firstName>Bernd</firstName>
      <lastName>Seime</lastName>
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    <author>
      <firstName>Ioanna</firstName>
      <lastName>Paloumpa</lastName>
    </author>
    <author>
      <firstName>Dieter</firstName>
      <lastName>Schmeißer</lastName>
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    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>organic</value>
    </subject>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>ferroelectric</value>
    </subject>
    <collection role="old_institute" number="01005">LS Angewandte Physik / Sensorik</collection>
    <collection role="institutes" number="1503">FG Angewandte Physik und Halbleiterspektroskopie</collection>
  </doc>
  <doc>
    <id>5031</id>
    <completedYear/>
    <publishedYear>2010</publishedYear>
    <thesisYearAccepted/>
    <language>eng</language>
    <pageFirst/>
    <pageLast/>
    <pageNumber/>
    <edition/>
    <issue/>
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    <type>articler</type>
    <publisherName/>
    <publisherPlace/>
    <creatingCorporation/>
    <contributingCorporation/>
    <belongsToBibliography>0</belongsToBibliography>
    <completedDate>2011-02-11</completedDate>
    <publishedDate>--</publishedDate>
    <thesisDateAccepted>--</thesisDateAccepted>
    <title language="eng">Band gab determination of P(VDF-TrFE) copolymer film by electron energy loss spectroscopy</title>
    <enrichment key="UBICOIdent">005860</enrichment>
    <enrichment key="UBICOquelle">Bulletin of Materials Science 33(2010)4, S. 457-461, 0973-7669</enrichment>
    <author>
      <firstName>Dipankar</firstName>
      <lastName>Mandal</lastName>
    </author>
    <submitter>
      <firstName>...</firstName>
      <lastName>Administrator</lastName>
    </submitter>
    <author>
      <firstName>Karsten</firstName>
      <lastName>Henkel</lastName>
    </author>
    <author>
      <firstName>Klaus</firstName>
      <lastName>Müller</lastName>
    </author>
    <author>
      <firstName>Dieter</firstName>
      <lastName>Schmeißer</lastName>
    </author>
    <collection role="old_institute" number="01005">LS Angewandte Physik / Sensorik</collection>
    <collection role="institutes" number="1503">FG Angewandte Physik und Halbleiterspektroskopie</collection>
  </doc>
  <doc>
    <id>5041</id>
    <completedYear/>
    <publishedYear>2010</publishedYear>
    <thesisYearAccepted/>
    <language>eng</language>
    <pageFirst>012036</pageFirst>
    <pageLast/>
    <pageNumber/>
    <edition/>
    <issue>1</issue>
    <volume>8</volume>
    <type>articler</type>
    <publisherName/>
    <publisherPlace/>
    <creatingCorporation/>
    <contributingCorporation/>
    <belongsToBibliography>0</belongsToBibliography>
    <completedDate>2011-02-11</completedDate>
    <publishedDate>--</publishedDate>
    <thesisDateAccepted>--</thesisDateAccepted>
    <title language="eng">Buffer layer incestigaions on MFIS capacitors consisting of ferroelectric poly[vinylidene fluoride trifluoroethylene]</title>
    <parentTitle language="eng">IOP conference series : Materials Science and Engineering</parentTitle>
    <identifier type="issn">1757-899X</identifier>
    <enrichment key="UBICOIdent">005870</enrichment>
    <author>
      <firstName>Karsten</firstName>
      <lastName>Henkel</lastName>
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    <submitter>
      <firstName>...</firstName>
      <lastName>Administrator</lastName>
    </submitter>
    <author>
      <firstName>Bernd</firstName>
      <lastName>Seime</lastName>
    </author>
    <author>
      <firstName>Ioanna</firstName>
      <lastName>Paloumpa</lastName>
    </author>
    <author>
      <firstName>Klaus</firstName>
      <lastName>Müller</lastName>
    </author>
    <author>
      <firstName>Dieter</firstName>
      <lastName>Schmeißer</lastName>
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      <language>eng</language>
      <type>uncontrolled</type>
      <value>MFIS capacitors</value>
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    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>ferroelectric</value>
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    <collection role="old_institute" number="01005">LS Angewandte Physik / Sensorik</collection>
    <collection role="institutes" number="1503">FG Angewandte Physik und Halbleiterspektroskopie</collection>
  </doc>
  <doc>
    <id>5042</id>
    <completedYear/>
    <publishedYear>2010</publishedYear>
    <thesisYearAccepted/>
    <language>eng</language>
    <pageFirst/>
    <pageLast/>
    <pageNumber/>
    <edition/>
    <issue/>
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    <type>articler</type>
    <publisherName/>
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    <creatingCorporation/>
    <contributingCorporation/>
    <belongsToBibliography>0</belongsToBibliography>
    <completedDate>2011-02-11</completedDate>
    <publishedDate>--</publishedDate>
    <thesisDateAccepted>--</thesisDateAccepted>
    <title language="eng">The band gab and band offset in ultrathin oxide-semiconductor heterostructures</title>
    <enrichment key="UBICOIdent">005871</enrichment>
    <enrichment key="UBICOquelle">Superlattices and Microstructures 47(2010)3, S. 369-376, 1096-3677</enrichment>
    <author>
      <firstName>Dieter</firstName>
      <lastName>Schmeißer</lastName>
    </author>
    <submitter>
      <firstName>...</firstName>
      <lastName>Administrator</lastName>
    </submitter>
    <author>
      <firstName>Karsten</firstName>
      <lastName>Henkel</lastName>
    </author>
    <author>
      <firstName>Matthias</firstName>
      <lastName>Bergholz</lastName>
    </author>
    <author>
      <firstName>Massimo</firstName>
      <lastName>Tallarida</lastName>
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    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>band gab</value>
    </subject>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>offset</value>
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    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>ultrathin</value>
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    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>heterostructures</value>
    </subject>
    <collection role="old_institute" number="01005">LS Angewandte Physik / Sensorik</collection>
    <collection role="institutes" number="1503">FG Angewandte Physik und Halbleiterspektroskopie</collection>
  </doc>
  <doc>
    <id>5051</id>
    <completedYear/>
    <publishedYear>2009</publishedYear>
    <thesisYearAccepted/>
    <language>deu</language>
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    <pageLast/>
    <pageNumber/>
    <edition/>
    <issue/>
    <volume/>
    <type>bookpart</type>
    <publisherName/>
    <publisherPlace/>
    <creatingCorporation/>
    <contributingCorporation/>
    <belongsToBibliography>0</belongsToBibliography>
    <completedDate>2011-02-11</completedDate>
    <publishedDate>--</publishedDate>
    <thesisDateAccepted>--</thesisDateAccepted>
    <title language="deu">Nachweis von Aerosolen (&lt;1µm) mit Schwingquarzimpedanzspektroskopie</title>
    <enrichment key="UBICOIdent">005881</enrichment>
    <enrichment key="UBICOquelle">Gerlach, Gerald (Hrsg.): 9. Dresdner Sensor-Symposium : Dresden, 07.-09. Dezember 2009. - Dresden : TUDpress, 2009, S. 217 - 220, 978-3-941298-44-6 (Dresdner Beiträge zur Sensorik ; 39)</enrichment>
    <author>
      <firstName>Carola</firstName>
      <lastName>Schwiertz</lastName>
    </author>
    <submitter>
      <firstName>...</firstName>
      <lastName>Administrator</lastName>
    </submitter>
    <author>
      <firstName>Karsten</firstName>
      <lastName>Henkel</lastName>
    </author>
    <author>
      <firstName>S.</firstName>
      <lastName>Blei</lastName>
    </author>
    <author>
      <firstName>R.</firstName>
      <lastName>Heidenreich</lastName>
    </author>
    <author>
      <firstName>Dieter</firstName>
      <lastName>Schmeißer</lastName>
    </author>
    <subject>
      <language>deu</language>
      <type>uncontrolled</type>
      <value>Schwingquarzimpedanzspektroskopie</value>
    </subject>
    <collection role="old_institute" number="01005">LS Angewandte Physik / Sensorik</collection>
    <collection role="institutes" number="1503">FG Angewandte Physik und Halbleiterspektroskopie</collection>
  </doc>
</export-example>
