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  <doc>
    <id>808</id>
    <completedYear/>
    <publishedYear>2002</publishedYear>
    <thesisYearAccepted/>
    <language>deu</language>
    <pageFirst>104</pageFirst>
    <pageLast>107</pageLast>
    <pageNumber/>
    <edition/>
    <issue/>
    <volume/>
    <type>bookpart</type>
    <publisherName>w.e.b. Universitätsverlag</publisherName>
    <publisherPlace>Dresden</publisherPlace>
    <creatingCorporation/>
    <contributingCorporation/>
    <belongsToBibliography>0</belongsToBibliography>
    <completedDate>2003-06-11</completedDate>
    <publishedDate>--</publishedDate>
    <thesisDateAccepted>--</thesisDateAccepted>
    <title language="deu">Backpropagation-Netzwerke für ein Zweisensorsystem zur Erfassung von Kohlendioxidkonzentrationen und relativer Luftfeuchte</title>
    <abstract language="deu">Zwei Schwingquarzsensoren mit gleicher sensitiver Beschichtung wurden zur Messung von CO2-Konzentrationen bei variierenden Luftfeuchten genutzt. Die Daten wurden neuronalen Netzen mit unterschiedlicher Architektur trainiert. Zwei Netze wurden auf ihre Generalisierungsfähigkeit getestet und miteinander verglichen. Für ein einstufiges Netz konnten Ergebnisse mit Fehlern kleiner 12% für die CO2-Konzentration und kleiner 5% für die Luftfeuchte erzielt werden. Ein zweistufiges Netz erkannte Kategorien der Luftfeuchte 100%-ig, für die CO2-Konzentration wurden Fehler kleiner 9% erreicht, wobei eine deutlich bessere Generalisierungsfähigkeit dieses Netzes im Vergleich zum einstufigen Netz zu verzeichnen ist.</abstract>
    <parentTitle language="deu">Sensoren im Fokus neuer Anwendungen : Verbraucherschutz und Lebensmittelkontrolle, Biosysteme und Nanobiotechnologie, Umweltmesstechnik, neue Sensormaterialien, Mess- und Eichwesen</parentTitle>
    <identifier type="isbn">3-935712-71-5</identifier>
    <identifier type="isbn">978-3-935712-71-2</identifier>
    <enrichment key="UBICOIdent">001118</enrichment>
    <enrichment key="UBICOquelle">Dresdner Beiträge zur Sensorik ; Band 16</enrichment>
    <author>
      <firstName>Karsten</firstName>
      <lastName>Henkel</lastName>
    </author>
    <submitter>
      <firstName>...</firstName>
      <lastName>Administrator</lastName>
    </submitter>
    <author>
      <firstName>Patrick</firstName>
      <lastName>Hoffmann</lastName>
    </author>
    <author>
      <firstName>Dieter</firstName>
      <lastName>Schmeißer</lastName>
    </author>
    <collection role="old_institute" number="01005">LS Angewandte Physik / Sensorik</collection>
    <collection role="institutes" number="1503">FG Angewandte Physik und Halbleiterspektroskopie</collection>
  </doc>
  <doc>
    <id>809</id>
    <completedYear/>
    <publishedYear>2002</publishedYear>
    <thesisYearAccepted/>
    <language>deu</language>
    <pageFirst>166</pageFirst>
    <pageLast>169</pageLast>
    <pageNumber/>
    <edition/>
    <issue/>
    <volume/>
    <type>conferenceobject</type>
    <publisherName>w.e.b. Universitätsverlag</publisherName>
    <publisherPlace>Dresden</publisherPlace>
    <creatingCorporation/>
    <contributingCorporation/>
    <belongsToBibliography>0</belongsToBibliography>
    <completedDate>2003-06-11</completedDate>
    <publishedDate>--</publishedDate>
    <thesisDateAccepted>--</thesisDateAccepted>
    <title language="deu">Low-cost-Plot-Technologie fur die Mikrostrukturierung von Gassensoren</title>
    <abstract language="deu">Bei der Herstellung von Mikrosensoren ist die Strukturierung von Elektroden oder elektrischen Zu-leitungen mit einem hohen Miniaturisierungsgrad ein entscheidender Punkt. Dazu müs-sen häufig teure Verfahren (Lithographie, Maskentechniken) herangezogen  werden.Dieser Beitrag beschreibt eine low-cost-Technologie zur Herstellung organischer Mikrostrukturen für elektronische und messtechnische Anwendungen im Bereich der Sensorik. Geplottete Strukturen mit Polypyrrol und Poly(3,4-Ethylen-Dioxy-Thiophen), dotiert mit Polystyrolsulfonat (PEDOT/PSS) wurden als Widerstandssensoren für die Detektion von Luftfeuchte ein-gesetzt. Die prinzipielle Ein-satzmöglichkeit unserer Technik im Bereich der organischen Elektronik konnten wir mit dem Bau organischer Feldeffekttransistoren nachweisen. Mit einem computergesteu-erten Plotter des Typs Rol-land DXY-1150A, Plot-Kapillaren für das Tuschezeichnen, handelsüblichen Folien für wasserlösliche Tinten als Substrat und kolloidalen Graphit als leitendes Material konnten wir Auflösungen, das heißt insbesondere Kanalbreiten bzw. Elektrodenabstände im Bereich von 20+10%B5m (auf 2cm Länge) her-stellen.</abstract>
    <parentTitle language="deu">Sensoren im Fokus neuer Anwendungen, 5. Dresdner Sensor-Symposium, 10. - 12. Dezember 2001, Dresden</parentTitle>
    <identifier type="isbn">3-935712-71-5</identifier>
    <enrichment key="UBICOIdent">001119</enrichment>
    <enrichment key="UBICOseries">Dresdner Beiträge zur Sensorik Band ; 16</enrichment>
    <author>
      <firstName>Klaus</firstName>
      <lastName>Müller</lastName>
    </author>
    <submitter>
      <firstName>...</firstName>
      <lastName>Administrator</lastName>
    </submitter>
    <author>
      <firstName>Karsten</firstName>
      <lastName>Henkel</lastName>
    </author>
    <author>
      <firstName>Ioanna</firstName>
      <lastName>Paloumpa</lastName>
    </author>
    <author>
      <firstName>Dieter</firstName>
      <lastName>Schmeißer</lastName>
    </author>
    <collection role="old_institute" number="01005">LS Angewandte Physik / Sensorik</collection>
    <collection role="institutes" number="1503">FG Angewandte Physik und Halbleiterspektroskopie</collection>
  </doc>
  <doc>
    <id>1246</id>
    <completedYear/>
    <publishedYear>2001</publishedYear>
    <thesisYearAccepted/>
    <language>eng</language>
    <pageFirst>124</pageFirst>
    <pageLast>129</pageLast>
    <pageNumber/>
    <edition/>
    <issue>1-3</issue>
    <volume>76</volume>
    <type>articler</type>
    <publisherName/>
    <publisherPlace/>
    <creatingCorporation/>
    <contributingCorporation/>
    <belongsToBibliography>0</belongsToBibliography>
    <completedDate>2003-08-21</completedDate>
    <publishedDate>--</publishedDate>
    <thesisDateAccepted>--</thesisDateAccepted>
    <title language="eng">Selective polypyrrole electrodes for quartz microbalances : NO2 and gas flux sensitivities</title>
    <parentTitle language="eng">Sensors and Actuators : B, Chemical 76(2001)1-3</parentTitle>
    <identifier type="issn">0925-4005</identifier>
    <enrichment key="UBICOIdent">001576</enrichment>
    <author>
      <firstName>Karsten</firstName>
      <lastName>Henkel</lastName>
    </author>
    <submitter>
      <firstName>...</firstName>
      <lastName>Administrator</lastName>
    </submitter>
    <author>
      <firstName>A.</firstName>
      <lastName>Oprea</lastName>
    </author>
    <author>
      <firstName>Ioanna</firstName>
      <lastName>Paloumpa</lastName>
    </author>
    <author>
      <firstName>Günter</firstName>
      <lastName>Appel</lastName>
    </author>
    <author>
      <firstName>Dieter</firstName>
      <lastName>Schmeißer</lastName>
    </author>
    <author>
      <firstName>P.</firstName>
      <lastName>Kamieth</lastName>
    </author>
    <collection role="old_institute" number="01005">LS Angewandte Physik / Sensorik</collection>
    <collection role="institutes" number="1503">FG Angewandte Physik und Halbleiterspektroskopie</collection>
  </doc>
  <doc>
    <id>1585</id>
    <completedYear/>
    <publishedYear>2001</publishedYear>
    <thesisYearAccepted/>
    <language>eng</language>
    <pageFirst/>
    <pageLast/>
    <pageNumber/>
    <edition/>
    <issue/>
    <volume/>
    <type>conferenceobject</type>
    <publisherName/>
    <publisherPlace/>
    <creatingCorporation/>
    <contributingCorporation/>
    <belongsToBibliography>0</belongsToBibliography>
    <completedDate>2003-09-04</completedDate>
    <publishedDate>--</publishedDate>
    <thesisDateAccepted>--</thesisDateAccepted>
    <title language="eng">Piezoelectric polymer sensor for high pressures in forming machines</title>
    <identifier type="url">http://www.materialsweek.org/proceedings/index.htm</identifier>
    <enrichment key="UBICOIdent">001925</enrichment>
    <enrichment key="UBICOquelle">Materials Week 2000, proceedings CD-ROM</enrichment>
    <author>
      <firstName>Karsten</firstName>
      <lastName>Henkel</lastName>
    </author>
    <submitter>
      <firstName>...</firstName>
      <lastName>Administrator</lastName>
    </submitter>
    <author>
      <firstName>B.</firstName>
      <lastName>Elling</lastName>
    </author>
    <author>
      <firstName>R.</firstName>
      <lastName>Danz</lastName>
    </author>
    <author>
      <firstName>A.</firstName>
      <lastName>Büchtemann</lastName>
    </author>
    <author>
      <firstName>Oliver</firstName>
      <lastName>Straube</lastName>
    </author>
    <author>
      <firstName>Ioanna</firstName>
      <lastName>Paloumpa</lastName>
    </author>
    <author>
      <firstName>Alexandros D.</firstName>
      <lastName>Yfantis</lastName>
    </author>
    <author>
      <firstName>Dieter</firstName>
      <lastName>Schmeißer</lastName>
    </author>
    <collection role="old_institute" number="01005">LS Angewandte Physik / Sensorik</collection>
    <collection role="institutes" number="1503">FG Angewandte Physik und Halbleiterspektroskopie</collection>
  </doc>
  <doc>
    <id>1977</id>
    <completedYear/>
    <publishedYear>2003</publishedYear>
    <thesisYearAccepted/>
    <language>deu</language>
    <pageFirst>119</pageFirst>
    <pageLast>223</pageLast>
    <pageNumber/>
    <edition/>
    <issue/>
    <volume/>
    <type>bookpart</type>
    <publisherName>w.e.b.-Univ.-Verl.</publisherName>
    <publisherPlace>Dresden</publisherPlace>
    <creatingCorporation/>
    <contributingCorporation/>
    <belongsToBibliography>0</belongsToBibliography>
    <completedDate>2005-06-02</completedDate>
    <publishedDate>--</publishedDate>
    <thesisDateAccepted>--</thesisDateAccepted>
    <title language="deu">Organische Feldeffekttransistoren als Transducer in der Biosensorik</title>
    <identifier type="isbn">3-935712-92-8</identifier>
    <enrichment key="UBICOIdent">002398</enrichment>
    <enrichment key="UBICOseries">Dresdner Beiträge zur Sensorik ; 20</enrichment>
    <author>
      <firstName>Klaus</firstName>
      <lastName>Müller</lastName>
    </author>
    <submitter>
      <firstName>...</firstName>
      <lastName>Administrator</lastName>
    </submitter>
    <author>
      <firstName>Werner</firstName>
      <lastName>Bär</lastName>
    </author>
    <author>
      <firstName>Karsten</firstName>
      <lastName>Henkel</lastName>
    </author>
    <author>
      <firstName>Agnes</firstName>
      <lastName>Jahnke</lastName>
    </author>
    <author>
      <firstName>Carola</firstName>
      <lastName>Schwiertz</lastName>
    </author>
    <author>
      <firstName>Dieter</firstName>
      <lastName>Schmeißer</lastName>
    </author>
    <collection role="old_institute" number="01005">LS Angewandte Physik / Sensorik</collection>
    <collection role="institutes" number="1503">FG Angewandte Physik und Halbleiterspektroskopie</collection>
  </doc>
  <doc>
    <id>1985</id>
    <completedYear/>
    <publishedYear>2003</publishedYear>
    <thesisYearAccepted/>
    <language>deu</language>
    <pageFirst>291</pageFirst>
    <pageLast>294</pageLast>
    <pageNumber/>
    <edition/>
    <issue/>
    <volume/>
    <type>bookpart</type>
    <publisherName>w.e.b.-Univ.-Verl.</publisherName>
    <publisherPlace>Dresden</publisherPlace>
    <creatingCorporation/>
    <contributingCorporation/>
    <belongsToBibliography>0</belongsToBibliography>
    <completedDate>2005-06-02</completedDate>
    <publishedDate>--</publishedDate>
    <thesisDateAccepted>--</thesisDateAccepted>
    <title language="deu">Partikel- und Tropfendetektion im Mikrometerbereich mittels Schwingquarzen</title>
    <identifier type="isbn">3-935712-92-8</identifier>
    <enrichment key="UBICOIdent">002471</enrichment>
    <enrichment key="UBICOseries">Dresdner Beiträge zur Sensorik ; 20</enrichment>
    <author>
      <firstName>Karsten</firstName>
      <lastName>Henkel</lastName>
    </author>
    <submitter>
      <firstName>...</firstName>
      <lastName>Administrator</lastName>
    </submitter>
    <author>
      <firstName>Carola</firstName>
      <lastName>Schwiertz</lastName>
    </author>
    <author>
      <firstName>S.</firstName>
      <lastName>Wagner</lastName>
    </author>
    <author>
      <firstName>A.</firstName>
      <lastName>Valdeig</lastName>
    </author>
    <author>
      <firstName>M.</firstName>
      <lastName>List</lastName>
    </author>
    <author>
      <firstName>Dieter</firstName>
      <lastName>Schmeißer</lastName>
    </author>
    <collection role="old_institute" number="01005">LS Angewandte Physik / Sensorik</collection>
    <collection role="institutes" number="1503">FG Angewandte Physik und Halbleiterspektroskopie</collection>
  </doc>
  <doc>
    <id>2618</id>
    <completedYear/>
    <publishedYear>2004</publishedYear>
    <thesisYearAccepted/>
    <language>eng</language>
    <pageFirst>245</pageFirst>
    <pageLast>248</pageLast>
    <pageNumber/>
    <edition/>
    <issue>2</issue>
    <volume>201</volume>
    <type>article</type>
    <publisherName/>
    <publisherPlace/>
    <creatingCorporation/>
    <contributingCorporation/>
    <belongsToBibliography>0</belongsToBibliography>
    <completedDate>2005-09-13</completedDate>
    <publishedDate>--</publishedDate>
    <thesisDateAccepted>--</thesisDateAccepted>
    <title language="eng">The Si(001)/C2H2 interaction to form a buffer layer for 3C-SiC growth</title>
    <abstract language="eng">The intial stages of Si(001) interaction with C2H2 were investigated with XPS and surface profilometry. The carbon enriched layer serves as a buffer between Si substrate and the 3C-SiC film aimed at growing on Si(001). Such parameters as substrate temperature and process duration come into a complicated interplay of C deposition, its reaction with Si and out-diffusion of the later from the substrate. Three distinct regimes, namely graphite dominated, carbide dominated and roughness dominated are found to result from this interplay.</abstract>
    <parentTitle language="eng">Physica status solidi / A</parentTitle>
    <identifier type="issn">0031-8965</identifier>
    <enrichment key="UBICOIdent">003145</enrichment>
    <author>
      <firstName>Andriy</firstName>
      <lastName>Goryachko</lastName>
    </author>
    <submitter>
      <firstName>...</firstName>
      <lastName>Administrator</lastName>
    </submitter>
    <author>
      <firstName>Y.</firstName>
      <lastName>Yeromenko</lastName>
    </author>
    <author>
      <firstName>Karsten</firstName>
      <lastName>Henkel</lastName>
    </author>
    <author>
      <firstName>Jürgen</firstName>
      <lastName>Wollweber</lastName>
    </author>
    <author>
      <firstName>Dieter</firstName>
      <lastName>Schmeißer</lastName>
    </author>
    <collection role="old_institute" number="01005">LS Angewandte Physik / Sensorik</collection>
    <collection role="institutes" number="1503">FG Angewandte Physik und Halbleiterspektroskopie</collection>
  </doc>
  <doc>
    <id>2620</id>
    <completedYear/>
    <publishedYear>2005</publishedYear>
    <thesisYearAccepted/>
    <language>eng</language>
    <pageFirst>S. 056104</pageFirst>
    <pageLast/>
    <pageNumber/>
    <edition/>
    <issue>5</issue>
    <volume>98</volume>
    <type>articler</type>
    <publisherName/>
    <publisherPlace/>
    <creatingCorporation/>
    <contributingCorporation/>
    <belongsToBibliography>0</belongsToBibliography>
    <completedDate>2005-09-14</completedDate>
    <publishedDate>--</publishedDate>
    <thesisDateAccepted>--</thesisDateAccepted>
    <title language="eng">A polymer high-k dielectric insulator for organic field effect Transistors</title>
    <parentTitle language="eng">Journal of Applied Physics</parentTitle>
    <identifier type="issn">0021-8979</identifier>
    <enrichment key="UBICOIdent">003147</enrichment>
    <author>
      <firstName>Klaus</firstName>
      <lastName>Müller</lastName>
    </author>
    <submitter>
      <firstName>...</firstName>
      <lastName>Administrator</lastName>
    </submitter>
    <author>
      <firstName>Ioanna</firstName>
      <lastName>Paloumpa</lastName>
    </author>
    <author>
      <firstName>Karsten</firstName>
      <lastName>Henkel</lastName>
    </author>
    <author>
      <firstName>Dieter</firstName>
      <lastName>Schmeißer</lastName>
    </author>
    <collection role="old_institute" number="01005">LS Angewandte Physik / Sensorik</collection>
    <collection role="institutes" number="1503">FG Angewandte Physik und Halbleiterspektroskopie</collection>
  </doc>
  <doc>
    <id>2674</id>
    <completedYear/>
    <publishedYear>2005</publishedYear>
    <thesisYearAccepted/>
    <language>deu</language>
    <pageFirst>49</pageFirst>
    <pageLast>56</pageLast>
    <pageNumber/>
    <edition/>
    <issue>18</issue>
    <volume>9</volume>
    <type>articlenr</type>
    <publisherName/>
    <publisherPlace/>
    <creatingCorporation/>
    <contributingCorporation/>
    <belongsToBibliography>0</belongsToBibliography>
    <completedDate>2006-01-19</completedDate>
    <publishedDate>--</publishedDate>
    <thesisDateAccepted>--</thesisDateAccepted>
    <title language="deu">Grenzflächenoptimierung für funktionale Dünnschichtsysteme: Oxide und Polymere</title>
    <parentTitle language="deu">Forum der Forschung</parentTitle>
    <identifier type="issn">0947-6989</identifier>
    <enrichment key="UBICOIdent">003239</enrichment>
    <author>
      <firstName>Karsten</firstName>
      <lastName>Henkel</lastName>
    </author>
    <submitter>
      <firstName>...</firstName>
      <lastName>Administrator</lastName>
    </submitter>
    <author>
      <firstName>Rakesh</firstName>
      <lastName>Sohal</lastName>
    </author>
    <author>
      <firstName>Mohamed</firstName>
      <lastName>Torche</lastName>
    </author>
    <author>
      <firstName>Ioanna</firstName>
      <lastName>Paloumpa</lastName>
    </author>
    <author>
      <firstName>Klaus</firstName>
      <lastName>Müller</lastName>
    </author>
    <author>
      <firstName>Patrick</firstName>
      <lastName>Hoffmann</lastName>
    </author>
    <author>
      <firstName>Dieter</firstName>
      <lastName>Schmeißer</lastName>
    </author>
    <collection role="old_institute" number="01005">LS Angewandte Physik / Sensorik</collection>
    <collection role="institutes" number="1503">FG Angewandte Physik und Halbleiterspektroskopie</collection>
  </doc>
  <doc>
    <id>3586</id>
    <completedYear/>
    <publishedYear>2006</publishedYear>
    <thesisYearAccepted/>
    <language>eng</language>
    <pageFirst/>
    <pageLast/>
    <pageNumber/>
    <edition/>
    <issue/>
    <volume/>
    <type>article</type>
    <publisherName/>
    <publisherPlace/>
    <creatingCorporation/>
    <contributingCorporation/>
    <belongsToBibliography>0</belongsToBibliography>
    <completedDate>2007-05-31</completedDate>
    <publishedDate>--</publishedDate>
    <thesisDateAccepted>--</thesisDateAccepted>
    <title language="eng">Organic thin film transistors with polymer high-k dielectric insulator</title>
    <enrichment key="UBICOIdent">004284</enrichment>
    <enrichment key="UBICOquelle">Materials Science and Engineering : C 26(2006)5-7, S. 1028 -1031, 0928-4931</enrichment>
    <author>
      <firstName>Klaus</firstName>
      <lastName>Müller</lastName>
    </author>
    <submitter>
      <firstName>...</firstName>
      <lastName>Administrator</lastName>
    </submitter>
    <author>
      <firstName>Ioanna</firstName>
      <lastName>Paloumpa</lastName>
    </author>
    <author>
      <firstName>Dieter</firstName>
      <lastName>Schmeißer</lastName>
    </author>
    <author>
      <firstName>Karsten</firstName>
      <lastName>Henkel</lastName>
    </author>
    <subject>
      <language>deu</language>
      <type>uncontrolled</type>
      <value>high-k</value>
    </subject>
    <collection role="old_institute" number="01005">LS Angewandte Physik / Sensorik</collection>
    <collection role="institutes" number="1503">FG Angewandte Physik und Halbleiterspektroskopie</collection>
  </doc>
  <doc>
    <id>3585</id>
    <completedYear/>
    <publishedYear>2006</publishedYear>
    <thesisYearAccepted/>
    <language>eng</language>
    <pageFirst/>
    <pageLast/>
    <pageNumber/>
    <edition/>
    <issue/>
    <volume/>
    <type>article</type>
    <publisherName/>
    <publisherPlace/>
    <creatingCorporation/>
    <contributingCorporation/>
    <belongsToBibliography>0</belongsToBibliography>
    <completedDate>2007-05-31</completedDate>
    <publishedDate>--</publishedDate>
    <thesisDateAccepted>--</thesisDateAccepted>
    <title language="eng">The interaction of Al, Ag, Au and Ti to Pr2O3 thin film dielectrics</title>
    <enrichment key="UBICOIdent">004282</enrichment>
    <enrichment key="UBICOquelle">Materials Science and Engineering : C 26(2006)5-7, S. 1127-1130, 0928-4931</enrichment>
    <author>
      <firstName>Mohamed</firstName>
      <lastName>Torche</lastName>
    </author>
    <submitter>
      <firstName>...</firstName>
      <lastName>Administrator</lastName>
    </submitter>
    <author>
      <firstName>Karsten</firstName>
      <lastName>Henkel</lastName>
    </author>
    <author>
      <firstName>Dieter</firstName>
      <lastName>Schmeißer</lastName>
    </author>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>thin films</value>
    </subject>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>Pr2O3</value>
    </subject>
    <collection role="old_institute" number="01005">LS Angewandte Physik / Sensorik</collection>
    <collection role="institutes" number="1503">FG Angewandte Physik und Halbleiterspektroskopie</collection>
  </doc>
  <doc>
    <id>3672</id>
    <completedYear/>
    <publishedYear>2007</publishedYear>
    <thesisYearAccepted/>
    <language>eng</language>
    <pageFirst/>
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    <id>5028</id>
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      <firstName>Massimo</firstName>
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      <language>eng</language>
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    <enrichment key="UBICOquelle">Gerlach, Gerald (Hrsg.): 9. Dresdner Sensor-Symposium : Dresden, 07.-09. Dezember 2009. - Dresden : TUDpress, 2009, S. 217 - 220, 978-3-941298-44-6 (Dresdner Beiträge zur Sensorik ; 39)</enrichment>
    <author>
      <firstName>Carola</firstName>
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      <firstName>S.</firstName>
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      <firstName>Massimo</firstName>
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    <id>5060</id>
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    <thesisDateAccepted>--</thesisDateAccepted>
    <title language="eng">Characterization of oxidic and organic materials with synchrotron radiation based XPS and XAS</title>
    <enrichment key="UBICOIdent">005899</enrichment>
    <enrichment key="UBICOquelle">Materials Science Poland 27(2009)1, S. 141-157</enrichment>
    <author>
      <firstName>Dieter</firstName>
      <lastName>Schmeißer</lastName>
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    <submitter>
      <firstName>...</firstName>
      <lastName>Administrator</lastName>
    </submitter>
    <author>
      <firstName>Massimo</firstName>
      <lastName>Tallarida</lastName>
    </author>
    <author>
      <firstName>Karsten</firstName>
      <lastName>Henkel</lastName>
    </author>
    <author>
      <firstName>Klaus</firstName>
      <lastName>Müller</lastName>
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    <author>
      <firstName>Dipankar</firstName>
      <lastName>Mandal</lastName>
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    <author>
      <firstName>Dmytro</firstName>
      <lastName>Chumakov</lastName>
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    <author>
      <firstName>Ehrenfried</firstName>
      <lastName>Zschech</lastName>
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    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>oxidic</value>
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    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>organic</value>
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    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>materials</value>
    </subject>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>synchrotron radiation</value>
    </subject>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>XPS</value>
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    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>XAS</value>
    </subject>
    <collection role="old_institute" number="01005">LS Angewandte Physik / Sensorik</collection>
    <collection role="institutes" number="1503">FG Angewandte Physik und Halbleiterspektroskopie</collection>
  </doc>
  <doc>
    <id>5064</id>
    <completedYear/>
    <publishedYear>2009</publishedYear>
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    <language>eng</language>
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    <pageLast/>
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    <belongsToBibliography>0</belongsToBibliography>
    <completedDate>2011-02-11</completedDate>
    <publishedDate>--</publishedDate>
    <thesisDateAccepted>--</thesisDateAccepted>
    <title language="eng">Interface screening and imprint in pol(vinylidene fluoride/trifluoroethylene) ferroelectric field effect transistors</title>
    <enrichment key="UBICOIdent">005905</enrichment>
    <enrichment key="UBICOquelle">Journal of Applied Physics 105(2009)5, 054110, 1089-7550</enrichment>
    <author>
      <firstName>I.</firstName>
      <lastName>Lazareva</lastName>
    </author>
    <submitter>
      <firstName>...</firstName>
      <lastName>Administrator</lastName>
    </submitter>
    <author>
      <firstName>Yuri</firstName>
      <lastName>Koval</lastName>
    </author>
    <author>
      <firstName>P.</firstName>
      <lastName>Müller</lastName>
    </author>
    <author>
      <firstName>Klaus</firstName>
      <lastName>Müller</lastName>
    </author>
    <author>
      <firstName>Karsten</firstName>
      <lastName>Henkel</lastName>
    </author>
    <author>
      <firstName>Dieter</firstName>
      <lastName>Schmeißer</lastName>
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    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>interface</value>
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    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>screening</value>
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    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>transistors</value>
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    <collection role="old_institute" number="01005">LS Angewandte Physik / Sensorik</collection>
    <collection role="institutes" number="1503">FG Angewandte Physik und Halbleiterspektroskopie</collection>
  </doc>
  <doc>
    <id>5065</id>
    <completedYear/>
    <publishedYear>2009</publishedYear>
    <thesisYearAccepted/>
    <language>eng</language>
    <pageFirst>445</pageFirst>
    <pageLast>468</pageLast>
    <pageNumber/>
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    <volume/>
    <type>bookpart</type>
    <publisherName>Wiley-VCH</publisherName>
    <publisherPlace>Weinheim</publisherPlace>
    <creatingCorporation/>
    <contributingCorporation/>
    <belongsToBibliography>0</belongsToBibliography>
    <completedDate>2011-02-11</completedDate>
    <publishedDate>--</publishedDate>
    <thesisDateAccepted>--</thesisDateAccepted>
    <title language="eng">Microscopic and spectroscopic characterization of interfaces and dielectric layers for OFET devices</title>
    <parentTitle language="eng">Organic Electronics : structural and Electronic Properties of OFETs</parentTitle>
    <identifier type="isbn">978-3-527-40810-8</identifier>
    <enrichment key="UBICOIdent">005906</enrichment>
    <author>
      <firstName>Klaus</firstName>
      <lastName>Müller</lastName>
    </author>
    <submitter>
      <firstName>...</firstName>
      <lastName>Administrator</lastName>
    </submitter>
    <editor>
      <firstName>Christof</firstName>
      <lastName>Wöll</lastName>
    </editor>
    <author>
      <firstName>Yevgen</firstName>
      <lastName>Burkov</lastName>
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    <author>
      <firstName>Dipankar</firstName>
      <lastName>Mandal</lastName>
    </author>
    <author>
      <firstName>Karsten</firstName>
      <lastName>Henkel</lastName>
    </author>
    <author>
      <firstName>Ioanna</firstName>
      <lastName>Paloumpa</lastName>
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    <author>
      <firstName>Andriy</firstName>
      <lastName>Goryachko</lastName>
    </author>
    <author>
      <firstName>Dieter</firstName>
      <lastName>Schmeißer</lastName>
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    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>microscopic</value>
    </subject>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>spectrocsopic</value>
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    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>dielectric</value>
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    <collection role="old_institute" number="01005">LS Angewandte Physik / Sensorik</collection>
    <collection role="institutes" number="1503">FG Angewandte Physik und Halbleiterspektroskopie</collection>
  </doc>
  <doc>
    <id>5069</id>
    <completedYear/>
    <publishedYear>2009</publishedYear>
    <thesisYearAccepted/>
    <language>eng</language>
    <pageFirst/>
    <pageLast/>
    <pageNumber/>
    <edition/>
    <issue/>
    <volume/>
    <type>articler</type>
    <publisherName/>
    <publisherPlace/>
    <creatingCorporation/>
    <contributingCorporation/>
    <belongsToBibliography>0</belongsToBibliography>
    <completedDate>2011-02-11</completedDate>
    <publishedDate>--</publishedDate>
    <thesisDateAccepted>--</thesisDateAccepted>
    <title language="eng">Electrical investigations on metal/ferroelectric/insulator/semiconductor structures using Poly[vinylidene fluoride trifluoroethylene] as ferroelectric layer for organic nonvolatile memory applications</title>
    <enrichment key="UBICOIdent">005910</enrichment>
    <enrichment key="UBICOquelle">Journal of Vacuum Science and Technology B 27(2009)1, S. 504-507</enrichment>
    <author>
      <firstName>Karsten</firstName>
      <lastName>Henkel</lastName>
    </author>
    <submitter>
      <firstName>...</firstName>
      <lastName>Administrator</lastName>
    </submitter>
    <author>
      <firstName>I.</firstName>
      <lastName>Lazareva</lastName>
    </author>
    <author>
      <firstName>Dipankar</firstName>
      <lastName>Mandal</lastName>
    </author>
    <author>
      <firstName>Ioanna</firstName>
      <lastName>Paloumpa</lastName>
    </author>
    <author>
      <firstName>Klaus</firstName>
      <lastName>Müller</lastName>
    </author>
    <author>
      <firstName>Yuri</firstName>
      <lastName>Koval</lastName>
    </author>
    <author>
      <firstName>P.</firstName>
      <lastName>Müller</lastName>
    </author>
    <author>
      <firstName>Dieter</firstName>
      <lastName>Schmeißer</lastName>
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    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>metal</value>
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    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>frerroelectric</value>
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    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>insulator</value>
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    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>semiconductor</value>
    </subject>
    <collection role="old_institute" number="01005">LS Angewandte Physik / Sensorik</collection>
    <collection role="institutes" number="1503">FG Angewandte Physik und Halbleiterspektroskopie</collection>
  </doc>
  <doc>
    <id>5071</id>
    <completedYear/>
    <publishedYear>2009</publishedYear>
    <thesisYearAccepted/>
    <language>deu</language>
    <pageFirst/>
    <pageLast/>
    <pageNumber/>
    <edition/>
    <issue/>
    <volume/>
    <type>articler</type>
    <publisherName/>
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    <creatingCorporation/>
    <contributingCorporation/>
    <belongsToBibliography>0</belongsToBibliography>
    <completedDate>2011-02-11</completedDate>
    <publishedDate>--</publishedDate>
    <thesisDateAccepted>--</thesisDateAccepted>
    <title language="deu">Optimization of the AION buffer layer for PrxOy/Si stacks</title>
    <enrichment key="UBICOIdent">005912</enrichment>
    <enrichment key="UBICOquelle">Journal of Vacuum Science and Technology : B 27(2009)1, S. 253-257</enrichment>
    <author>
      <firstName>Karsten</firstName>
      <lastName>Henkel</lastName>
    </author>
    <submitter>
      <firstName>...</firstName>
      <lastName>Administrator</lastName>
    </submitter>
    <author>
      <firstName>Yevgen</firstName>
      <lastName>Burkov</lastName>
    </author>
    <author>
      <firstName>Konstantin</firstName>
      <lastName>Karavaev</lastName>
    </author>
    <author>
      <firstName>Mohamed</firstName>
      <lastName>Torche</lastName>
    </author>
    <author>
      <firstName>Carola</firstName>
      <lastName>Schwiertz</lastName>
    </author>
    <author>
      <firstName>Dieter</firstName>
      <lastName>Schmeißer</lastName>
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    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>AION buffer</value>
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    <collection role="old_institute" number="01005">LS Angewandte Physik / Sensorik</collection>
    <collection role="institutes" number="1503">FG Angewandte Physik und Halbleiterspektroskopie</collection>
  </doc>
  <doc>
    <id>5156</id>
    <completedYear/>
    <publishedYear>2008</publishedYear>
    <thesisYearAccepted/>
    <language>eng</language>
    <pageFirst/>
    <pageLast/>
    <pageNumber/>
    <edition/>
    <issue/>
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    <type>article</type>
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    <creatingCorporation/>
    <contributingCorporation/>
    <belongsToBibliography>0</belongsToBibliography>
    <completedDate>2011-02-15</completedDate>
    <publishedDate>--</publishedDate>
    <thesisDateAccepted>--</thesisDateAccepted>
    <title language="eng">Ferroelectric properties of spin-coated ultrathin (down to 10nm) copolymer films</title>
    <enrichment key="UBICOIdent">005998</enrichment>
    <enrichment key="UBICOquelle">Applied Physics Letters 93(2008)11, 112901, 1077-3118</enrichment>
    <author>
      <firstName>Klaus</firstName>
      <lastName>Müller</lastName>
    </author>
    <submitter>
      <firstName>...</firstName>
      <lastName>Administrator</lastName>
    </submitter>
    <author>
      <firstName>Dipankar</firstName>
      <lastName>Mandal</lastName>
    </author>
    <author>
      <firstName>Karsten</firstName>
      <lastName>Henkel</lastName>
    </author>
    <author>
      <firstName>Ioanna</firstName>
      <lastName>Paloumpa</lastName>
    </author>
    <author>
      <firstName>Dieter</firstName>
      <lastName>Schmeißer</lastName>
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    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>ferroelectric</value>
    </subject>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>spin-coated</value>
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    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>copolymer</value>
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    <collection role="old_institute" number="01005">LS Angewandte Physik / Sensorik</collection>
    <collection role="institutes" number="1503">FG Angewandte Physik und Halbleiterspektroskopie</collection>
  </doc>
  <doc>
    <id>5173</id>
    <completedYear/>
    <publishedYear>2008</publishedYear>
    <thesisYearAccepted/>
    <language>eng</language>
    <pageFirst>161</pageFirst>
    <pageLast>162</pageLast>
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    <contributingCorporation/>
    <belongsToBibliography>0</belongsToBibliography>
    <completedDate>2011-02-15</completedDate>
    <publishedDate>--</publishedDate>
    <thesisDateAccepted>--</thesisDateAccepted>
    <title language="eng">Al-Oxynitride as a buffer layer for high-k dielectrics</title>
    <parentTitle language="eng">Proceedings of 15th Workshop on Dielectrics in Microelectronics, Bad Saarow, 23 - 25 June 2008, Bad Saarow (Berlin)</parentTitle>
    <enrichment key="UBICOIdent">006016</enrichment>
    <author>
      <firstName>Karsten</firstName>
      <lastName>Henkel</lastName>
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    <submitter>
      <firstName>...</firstName>
      <lastName>Administrator</lastName>
    </submitter>
    <author>
      <firstName>Yevgen</firstName>
      <lastName>Burkov</lastName>
    </author>
    <author>
      <firstName>Matthias</firstName>
      <lastName>Bergholz</lastName>
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    <author>
      <firstName>Konstantin</firstName>
      <lastName>Karavaev</lastName>
    </author>
    <author>
      <firstName>Rakesh</firstName>
      <lastName>Sohal</lastName>
    </author>
    <author>
      <firstName>Mohamed</firstName>
      <lastName>Torche</lastName>
    </author>
    <author>
      <firstName>Dieter</firstName>
      <lastName>Schmeißer</lastName>
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    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>buffer layer</value>
    </subject>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>high-k</value>
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    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>dielectric</value>
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    <collection role="old_institute" number="01005">LS Angewandte Physik / Sensorik</collection>
    <collection role="institutes" number="1503">FG Angewandte Physik und Halbleiterspektroskopie</collection>
  </doc>
  <doc>
    <id>5174</id>
    <completedYear/>
    <publishedYear>2008</publishedYear>
    <thesisYearAccepted/>
    <language>eng</language>
    <pageFirst>159</pageFirst>
    <pageLast>160</pageLast>
    <pageNumber/>
    <edition/>
    <issue/>
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    <publisherName/>
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    <belongsToBibliography>0</belongsToBibliography>
    <completedDate>2011-02-15</completedDate>
    <publishedDate>--</publishedDate>
    <thesisDateAccepted>--</thesisDateAccepted>
    <title language="eng">Electrical investigations on MFIS structures consisting P[VDF/TrFE] as ferro-electric layer for non-volatile memory applications</title>
    <parentTitle language="eng">Proceedings of 15th Workshop on Dielectrics in Microelectronics, Bad Saarow, 23 - 25 June 2008, Bad Saarow (Berlin)</parentTitle>
    <enrichment key="UBICOIdent">006017</enrichment>
    <author>
      <firstName>Karsten</firstName>
      <lastName>Henkel</lastName>
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    <submitter>
      <firstName>...</firstName>
      <lastName>Administrator</lastName>
    </submitter>
    <author>
      <firstName>Dipankar</firstName>
      <lastName>Mandal</lastName>
    </author>
    <author>
      <firstName>Bernd</firstName>
      <lastName>Seime</lastName>
    </author>
    <author>
      <firstName>Ioanna</firstName>
      <lastName>Paloumpa</lastName>
    </author>
    <author>
      <firstName>I.</firstName>
      <lastName>Lazareva</lastName>
    </author>
    <author>
      <firstName>Klaus</firstName>
      <lastName>Müller</lastName>
    </author>
    <author>
      <firstName>Dieter</firstName>
      <lastName>Schmeißer</lastName>
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    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>MFIS, P[VDF/TrFE]</value>
    </subject>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>ferroelectric</value>
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    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>non-volatile</value>
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    <collection role="old_institute" number="01005">LS Angewandte Physik / Sensorik</collection>
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  <doc>
    <id>6348</id>
    <completedYear/>
    <publishedYear>2010</publishedYear>
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    <language>eng</language>
    <pageFirst>39</pageFirst>
    <pageLast>43</pageLast>
    <pageNumber/>
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    <publisherName>IEEE</publisherName>
    <publisherPlace>Piscataway, NJ</publisherPlace>
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    <belongsToBibliography>0</belongsToBibliography>
    <completedDate>2011-11-18</completedDate>
    <publishedDate>--</publishedDate>
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    <title language="eng">Fullerene based materials for ultra-low-k application</title>
    <parentTitle language="eng">International Students and Young Scientists Workshop "Photonics and Microsystems", Szklarska, Poreba, Poland, 25 - 27 June 2010</parentTitle>
    <identifier type="isbn">978-1-4244-8324-2</identifier>
    <enrichment key="UBICOIdent">007306</enrichment>
    <author>
      <firstName>K.</firstName>
      <lastName>Broczkowska</lastName>
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    <submitter>
      <firstName>...</firstName>
      <lastName>Administrator</lastName>
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    <author>
      <firstName>Jolanta</firstName>
      <lastName>Klocek</lastName>
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    <author>
      <firstName>Daniel</firstName>
      <lastName>Friedrich</lastName>
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    <author>
      <firstName>Karsten</firstName>
      <lastName>Henkel</lastName>
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    <author>
      <firstName>Krzysztof</firstName>
      <lastName>Kolanek</lastName>
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    <author>
      <firstName>A.</firstName>
      <lastName>Urbanowicz</lastName>
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    <author>
      <firstName>Dieter</firstName>
      <lastName>Schmeißer</lastName>
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    <author>
      <firstName>M.</firstName>
      <lastName>Miller</lastName>
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    <author>
      <firstName>Ehrenfried</firstName>
      <lastName>Zschech</lastName>
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  <doc>
    <id>6351</id>
    <completedYear/>
    <publishedYear>2010</publishedYear>
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    <language>eng</language>
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    <completedDate>2011-11-18</completedDate>
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    <title language="eng">Optimization of MFIS structures containing poly(vinylidene-fluoride trifluoroethylene) for non-volatile memory applications</title>
    <enrichment key="UBICOIdent">007318</enrichment>
    <enrichment key="UBICOquelle">Materials Science Poland 28(2010)1, S. 117-128, 0137-1339</enrichment>
    <author>
      <firstName>Karsten</firstName>
      <lastName>Henkel</lastName>
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    <submitter>
      <firstName>...</firstName>
      <lastName>Administrator</lastName>
    </submitter>
    <author>
      <firstName>Bernd</firstName>
      <lastName>Seime</lastName>
    </author>
    <author>
      <firstName>Ioanna</firstName>
      <lastName>Paloumpa</lastName>
    </author>
    <author>
      <firstName>Klaus</firstName>
      <lastName>Müller</lastName>
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    <author>
      <firstName>Dieter</firstName>
      <lastName>Schmeißer</lastName>
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    <collection role="old_institute" number="01005">LS Angewandte Physik / Sensorik</collection>
    <collection role="institutes" number="1503">FG Angewandte Physik und Halbleiterspektroskopie</collection>
  </doc>
  <doc>
    <id>6352</id>
    <completedYear/>
    <publishedYear>2010</publishedYear>
    <thesisYearAccepted/>
    <language>eng</language>
    <pageFirst/>
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    <belongsToBibliography>0</belongsToBibliography>
    <completedDate>2011-11-18</completedDate>
    <publishedDate>--</publishedDate>
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  </doc>
  <doc>
    <id>7013</id>
    <completedYear/>
    <publishedYear>2012</publishedYear>
    <thesisYearAccepted/>
    <language>eng</language>
    <pageFirst>2498</pageFirst>
    <pageLast>2504</pageLast>
    <pageNumber/>
    <edition/>
    <issue>7</issue>
    <volume>520</volume>
    <type>articler</type>
    <publisherName/>
    <publisherPlace/>
    <creatingCorporation/>
    <contributingCorporation/>
    <belongsToBibliography>0</belongsToBibliography>
    <completedDate>2012-01-30</completedDate>
    <publishedDate>--</publishedDate>
    <thesisDateAccepted>--</thesisDateAccepted>
    <title language="eng">Studies of the chemical and electrical properties of fullerene and 3-aminopropyltrimethoxysilane based low-k materials</title>
    <parentTitle language="eng">Thin Solid Films</parentTitle>
    <identifier type="issn">0040-6090</identifier>
    <enrichment key="UBICOIdent">008211</enrichment>
    <enrichment key="BTU">an der BTU erstellt / created at BTU</enrichment>
    <author>
      <firstName>Jolanta</firstName>
      <lastName>Klocek</lastName>
    </author>
    <submitter>
      <firstName>...</firstName>
      <lastName>Administrator</lastName>
    </submitter>
    <author>
      <firstName>Karsten</firstName>
      <lastName>Henkel</lastName>
    </author>
    <author>
      <firstName>Krzysztof</firstName>
      <lastName>Kolanek</lastName>
    </author>
    <author>
      <firstName>K.</firstName>
      <lastName>Broczkowska</lastName>
    </author>
    <author>
      <firstName>Dieter</firstName>
      <lastName>Schmeißer</lastName>
    </author>
    <author>
      <firstName>M.</firstName>
      <lastName>Miller</lastName>
    </author>
    <author>
      <firstName>Ehrenfried</firstName>
      <lastName>Zschech</lastName>
    </author>
    <collection role="old_institute" number="01005">LS Angewandte Physik / Sensorik</collection>
    <collection role="institutes" number="1503">FG Angewandte Physik und Halbleiterspektroskopie</collection>
  </doc>
  <doc>
    <id>7050</id>
    <completedYear/>
    <publishedYear>2012</publishedYear>
    <thesisYearAccepted/>
    <language>eng</language>
    <pageFirst>123</pageFirst>
    <pageLast>125</pageLast>
    <pageNumber/>
    <edition/>
    <issue>73</issue>
    <volume/>
    <type>articler</type>
    <publisherName/>
    <publisherPlace/>
    <creatingCorporation/>
    <contributingCorporation/>
    <belongsToBibliography>0</belongsToBibliography>
    <completedDate>2012-02-01</completedDate>
    <publishedDate>--</publishedDate>
    <thesisDateAccepted>--</thesisDateAccepted>
    <title language="eng">The electroactive Beta-phase formation in Poly(vinylidene fluoride) by gold nanoparticles doping</title>
    <parentTitle language="eng">Materials Letters</parentTitle>
    <identifier type="issn">0167-577X</identifier>
    <enrichment key="UBICOIdent">008257</enrichment>
    <enrichment key="BTU">an der BTU erstellt / created at BTU</enrichment>
    <author>
      <firstName>Dipankar</firstName>
      <lastName>Mandal</lastName>
    </author>
    <submitter>
      <firstName>...</firstName>
      <lastName>Administrator</lastName>
    </submitter>
    <author>
      <firstName>Karsten</firstName>
      <lastName>Henkel</lastName>
    </author>
    <author>
      <firstName>Dieter</firstName>
      <lastName>Schmeißer</lastName>
    </author>
    <collection role="old_institute" number="01005">LS Angewandte Physik / Sensorik</collection>
    <collection role="institutes" number="1503">FG Angewandte Physik und Halbleiterspektroskopie</collection>
  </doc>
  <doc>
    <id>7108</id>
    <completedYear/>
    <publishedYear>2012</publishedYear>
    <thesisYearAccepted/>
    <language>eng</language>
    <pageFirst>52</pageFirst>
    <pageLast>58</pageLast>
    <pageNumber/>
    <edition/>
    <issue>1</issue>
    <volume>2</volume>
    <type>articler</type>
    <publisherName/>
    <publisherPlace/>
    <creatingCorporation/>
    <contributingCorporation/>
    <belongsToBibliography>0</belongsToBibliography>
    <completedDate>2012-02-02</completedDate>
    <publishedDate>--</publishedDate>
    <thesisDateAccepted>--</thesisDateAccepted>
    <title language="eng">Annealing influence on siloxane based materials incorporated with fullerenes, phthalocyanines and silsesquioxanes</title>
    <parentTitle language="eng">BioNanoScience</parentTitle>
    <identifier type="issn">2191-1630</identifier>
    <enrichment key="UBICOIdent">008317</enrichment>
    <enrichment key="BTU">an der BTU erstellt / created at BTU</enrichment>
    <author>
      <firstName>Jolanta</firstName>
      <lastName>Klocek</lastName>
    </author>
    <submitter>
      <firstName>...</firstName>
      <lastName>Administrator</lastName>
    </submitter>
    <author>
      <firstName>Karsten</firstName>
      <lastName>Henkel</lastName>
    </author>
    <author>
      <firstName>Krzysztof</firstName>
      <lastName>Kolanek</lastName>
    </author>
    <author>
      <firstName>Ehrenfried</firstName>
      <lastName>Zschech</lastName>
    </author>
    <author>
      <firstName>Dieter</firstName>
      <lastName>Schmeißer</lastName>
    </author>
    <collection role="old_institute" number="01005">LS Angewandte Physik / Sensorik</collection>
    <collection role="institutes" number="1503">FG Angewandte Physik und Halbleiterspektroskopie</collection>
  </doc>
  <doc>
    <id>7821</id>
    <completedYear/>
    <publishedYear>2012</publishedYear>
    <thesisYearAccepted/>
    <language>eng</language>
    <pageFirst>4213</pageFirst>
    <pageLast>4221</pageLast>
    <pageNumber/>
    <edition/>
    <issue>10</issue>
    <volume>258</volume>
    <type>articler</type>
    <publisherName/>
    <publisherPlace/>
    <creatingCorporation/>
    <contributingCorporation/>
    <belongsToBibliography>0</belongsToBibliography>
    <completedDate>2012-03-16</completedDate>
    <publishedDate>--</publishedDate>
    <thesisDateAccepted>--</thesisDateAccepted>
    <title language="eng">Spectroscopic and capacitance-voltage characterization of thin aminopropylmethoxysilane films doped with copper phthalocyanine, tris(dimethylvinylsilyloxy)-POSS and fullerene cages</title>
    <parentTitle language="eng">Applied surface science</parentTitle>
    <identifier type="issn">0169-4332</identifier>
    <enrichment key="UBICOIdent">009116</enrichment>
    <enrichment key="BTU">an der BTU erstellt / created at BTU</enrichment>
    <author>
      <firstName>Jolanta</firstName>
      <lastName>Klocek</lastName>
    </author>
    <submitter>
      <firstName>...</firstName>
      <lastName>Administrator</lastName>
    </submitter>
    <author>
      <firstName>Karsten</firstName>
      <lastName>Henkel</lastName>
    </author>
    <author>
      <firstName>Krzysztof</firstName>
      <lastName>Kolanek</lastName>
    </author>
    <author>
      <firstName>Ehrenfried</firstName>
      <lastName>Zschech</lastName>
    </author>
    <author>
      <firstName>Dieter</firstName>
      <lastName>Schmeißer</lastName>
    </author>
    <collection role="old_institute" number="01005">LS Angewandte Physik / Sensorik</collection>
    <collection role="institutes" number="1503">FG Angewandte Physik und Halbleiterspektroskopie</collection>
  </doc>
  <doc>
    <id>9126</id>
    <completedYear/>
    <publishedYear>2013</publishedYear>
    <thesisYearAccepted/>
    <language>eng</language>
    <pageFirst>135</pageFirst>
    <pageLast>145</pageLast>
    <pageNumber/>
    <edition/>
    <issue>1</issue>
    <volume>74</volume>
    <type>articler</type>
    <publisherName/>
    <publisherPlace/>
    <creatingCorporation/>
    <contributingCorporation/>
    <belongsToBibliography>0</belongsToBibliography>
    <completedDate>2013-07-10</completedDate>
    <publishedDate>--</publishedDate>
    <thesisDateAccepted>--</thesisDateAccepted>
    <title language="eng">Influence of the fullerene derivatives and cage polyhedral oligomeric silsesquioxanes on 3-aminopropyltrimethoxysilane based hybrid nanocomposites chemical, morphological and electrical properties</title>
    <abstract language="eng">In this study we produced 3-aminopropyltrimethoxysilane based hybrid nanocomposites using fullerene derivative [6,6]–phenyl–C61–butyric acid methyl ester (PCBM) as nanodopants. Additionally,&#13;
we modified obtained material with incompletely condensed cage polyhedral oligomeric silsesqiuox-anes (POSS) in order to improve its properties. Thin films were deposited by means of the spin-coating method. The films were characterized by atomic force microscopy (AFM), X-ray photoelectron&#13;
spectroscopy (XPS) and capacitance–voltage (CV) measurements. We observed that a properly chosen&#13;
PCBM concentration may be a crucial factor to obtain high quality APTMS based films by the spin-coating technique. XPS revealed the presence of the C-NH-C species within POSS containing films&#13;
indicating chemical interaction between the amino group of APTMS and the POSS molecules. AFM results suggest that at high POSS monomer concentration in the range of 1% the creation of fractal-shaped aggregates takes place. The CV characterization of the samples exhibits a decrease of the APTMS based films dielectric constant due to the POSS and PCBM contribution. The combination of the applied methods delivers complementary information concerning the properties of the analyzed films.</abstract>
    <parentTitle language="eng">Journal of Physics and Chemistry of Solids</parentTitle>
    <identifier type="doi">10.1016/j.jpcs.2012.08.013</identifier>
    <identifier type="issn">0022-3697</identifier>
    <enrichment key="BTU">an der BTU erstellt / created at BTU</enrichment>
    <author>
      <firstName>Jolanta</firstName>
      <lastName>Klocek</lastName>
    </author>
    <submitter>
      <firstName>Karsten</firstName>
      <lastName>Henkel</lastName>
    </submitter>
    <author>
      <firstName>Krzysztof</firstName>
      <lastName>Kolanek</lastName>
    </author>
    <author>
      <firstName>Karsten</firstName>
      <lastName>Henkel</lastName>
    </author>
    <author>
      <firstName>Ehrenfried</firstName>
      <lastName>Zschech</lastName>
    </author>
    <author>
      <firstName>Dieter</firstName>
      <lastName>Schmeißer</lastName>
    </author>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>low-k</value>
    </subject>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>fullerene</value>
    </subject>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>aminopropyltrimethoxysilane</value>
    </subject>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>silsesqiuoxane</value>
    </subject>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>X-ray photoelectron spectroscopy (XPS)</value>
    </subject>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>Atomic force microscopy (AFM)</value>
    </subject>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>Capacitance voltage (CV)</value>
    </subject>
    <collection role="old_institute" number="01005">LS Angewandte Physik / Sensorik</collection>
    <collection role="institutes" number="1503">FG Angewandte Physik und Halbleiterspektroskopie</collection>
  </doc>
  <doc>
    <id>9101</id>
    <completedYear/>
    <publishedYear>2012</publishedYear>
    <thesisYearAccepted/>
    <language>eng</language>
    <pageFirst>209</pageFirst>
    <pageLast>213</pageLast>
    <pageNumber/>
    <edition/>
    <issue>261</issue>
    <volume/>
    <type>articler</type>
    <publisherName/>
    <publisherPlace/>
    <creatingCorporation/>
    <contributingCorporation/>
    <belongsToBibliography>0</belongsToBibliography>
    <completedDate>2013-07-09</completedDate>
    <publishedDate>--</publishedDate>
    <thesisDateAccepted>--</thesisDateAccepted>
    <title language="eng">The  effect  of  X-ray  photoelectron  spectroscopy  measurement  on  P(VDF-TrFE) copolymer  thin  films</title>
    <abstract language="eng">The  impact  of  prolonged  X-ray  irradiation  during  X-ray  photoelectron  spectroscopy  (XPS)  measurement was  investigated  on  poly(vinylidene-trifluoroethylene)  (P(VDF-TrFE))  thin  films.  It  was  observed  that&#13;
prolonged  X-ray  irradiation  can  accelerate  the  crosslinking  of  P(VDF-TrFE)  and  diminish  the  ferroelectric phase.  Fourier  transform  infrared  spectroscopy  (FT-IR)  data  indicate  that  the  ferroelectric  phase  diminishes  completely  after  360  kJ  of  X-ray  irradiation  dose  and  it  induces  the  paraelectric  phase.  In  this  work,&#13;
the  main  emphasis  was  given  to  the  optimization  of  the  X-ray  irradiation  dose  during  XPS measurements&#13;
to  maintain  the  ferroelectric  phase  within  the  copolymer  films.</abstract>
    <parentTitle language="eng">Applied  Surface  Science</parentTitle>
    <identifier type="doi">10.1016/j.apsusc.2012.07.144</identifier>
    <identifier type="issn">0169-4332</identifier>
    <identifier type="issn">1873-5584</identifier>
    <enrichment key="BTU">an der BTU erstellt / created at BTU</enrichment>
    <author>
      <firstName>Dipankar</firstName>
      <lastName>Mandal</lastName>
    </author>
    <submitter>
      <firstName>Karsten</firstName>
      <lastName>Henkel</lastName>
    </submitter>
    <author>
      <firstName>Klaus</firstName>
      <lastName>Müller</lastName>
    </author>
    <author>
      <firstName>Karsten</firstName>
      <lastName>Henkel</lastName>
    </author>
    <author>
      <firstName>Dieter</firstName>
      <lastName>Schmeißer</lastName>
    </author>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>P(VDF-TrFE)  copolymer  thin  film</value>
    </subject>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>XPS  measurement</value>
    </subject>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>X-ray  irradiation</value>
    </subject>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>Ferroelectric  to  paraelectric  phase transformation</value>
    </subject>
    <collection role="old_institute" number="01005">LS Angewandte Physik / Sensorik</collection>
    <collection role="institutes" number="1503">FG Angewandte Physik und Halbleiterspektroskopie</collection>
  </doc>
  <doc>
    <id>9108</id>
    <completedYear/>
    <publishedYear>2012</publishedYear>
    <thesisYearAccepted/>
    <language>eng</language>
    <pageFirst>640</pageFirst>
    <pageLast>641</pageLast>
    <pageNumber/>
    <edition/>
    <issue/>
    <volume/>
    <type>conferenceobject</type>
    <publisherName>Wiley-VCH</publisherName>
    <publisherPlace>Weinheim</publisherPlace>
    <creatingCorporation/>
    <contributingCorporation/>
    <belongsToBibliography>0</belongsToBibliography>
    <completedDate>2013-07-09</completedDate>
    <publishedDate>--</publishedDate>
    <thesisDateAccepted>--</thesisDateAccepted>
    <title language="eng">Control of β- and γ-Phase formation in electroactive P(VDF-HFP) films by silver nano-particle doping</title>
    <parentTitle language="eng">Frontiers in Electronic Materials: A Collection of Extended Abstracts of the Nature Conference Frontiers in Electronic Materials,     June 17 to 20 2012, Aachen, Germany</parentTitle>
    <identifier type="isbn">978-3-527-41191-7</identifier>
    <identifier type="doi">10.1002/9783527667703.ch69</identifier>
    <enrichment key="BTU">nicht an der BTU erstellt / not created at BTU</enrichment>
    <author>
      <firstName>Dipankar</firstName>
      <lastName>Mandal</lastName>
    </author>
    <editor>
      <firstName>Jörg</firstName>
      <lastName>Heber</lastName>
    </editor>
    <submitter>
      <firstName>Karsten</firstName>
      <lastName>Henkel</lastName>
    </submitter>
    <author>
      <firstName>Karsten</firstName>
      <lastName>Henkel</lastName>
    </author>
    <editor>
      <firstName>Darrell</firstName>
      <lastName>Schlom</lastName>
    </editor>
    <author>
      <firstName>Suken</firstName>
      <lastName>Das</lastName>
    </author>
    <editor>
      <firstName>Yoshinori</firstName>
      <lastName>Tokura</lastName>
    </editor>
    <author>
      <firstName>Dieter</firstName>
      <lastName>Schmeißer</lastName>
    </author>
    <editor>
      <firstName>Rainer</firstName>
      <lastName>Waser</lastName>
    </editor>
    <editor>
      <firstName>Matthias</firstName>
      <lastName>Wuttig</lastName>
    </editor>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>P(VDF.HFP)</value>
    </subject>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>electroactive phase</value>
    </subject>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>nanoparticle doping</value>
    </subject>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>FTIR</value>
    </subject>
    <collection role="old_institute" number="01005">LS Angewandte Physik / Sensorik</collection>
    <collection role="institutes" number="1503">FG Angewandte Physik und Halbleiterspektroskopie</collection>
  </doc>
  <doc>
    <id>10026</id>
    <completedYear/>
    <publishedYear>2009</publishedYear>
    <thesisYearAccepted/>
    <language>eng</language>
    <pageFirst/>
    <pageLast/>
    <pageNumber>165</pageNumber>
    <edition/>
    <issue/>
    <volume/>
    <type>doctoralthesis</type>
    <publisherName>Shaker</publisherName>
    <publisherPlace>Aachen</publisherPlace>
    <creatingCorporation/>
    <contributingCorporation/>
    <belongsToBibliography>0</belongsToBibliography>
    <completedDate>2013-11-18</completedDate>
    <publishedDate>--</publishedDate>
    <thesisDateAccepted>--</thesisDateAccepted>
    <title language="eng">Electrical Investigations on Praseodymium Oxide/Aluminum Oxynitride Containing Metal-Insulator-Semiconductor Stacks and on Metal-Ferroelectric-Insulator-Semiconductor Structures Consisting of Poly[vinylidene fluoride trifluoroethylene]</title>
    <abstract language="eng">In this thesis electrical characterizations on metal-insulator-semiconductor (MIS) and metal-ferroelectric-insulator-semiconductor (MFIS) stacks are presented. The results are discussed in terms of the increase of the performance&#13;
of these stacks in order to optimize the characteristics of devices like the field effect transistor (FET) for logic applications and  the ferroelectric field effect transistor (FeFET) for non-volatile and non-destructive readout memory&#13;
applications. Therefor, two material classes are investigated.&#13;
Firstly, this work focuses on praseodymium oxide (PrxOy) films as a high-kmaterial on silicon (Si) and silicon carbide in MISsamples. In particular the improvement of the performance by the introduction  of an aluminum oxynitride buffer layer, which acts as an interdiffusion barrier and reduces the leakage&#13;
current, the interface state density and the equivalent oxide thickness, is demonstrated. Secondly, in this work the very attractive ferroelectric material poly[vinylidene&#13;
fluoride trifluoroethylene] (P[VDF/TrFE]) is introduced in MFIS stacks on Si. The way of successive improvements of the MFIS stack is extensively discussed. Here, the optimization of the preparation of the samples as well as of the layer parameters in the sequence of the MFIS stacks is depicted. An improved long time stability of the memory functionof the MFIS stack with a&#13;
partially optimized layer sequence is exhibited. The electrical results are correlated to spectroscopic findings on both material&#13;
systems. Strong interfacial reactions between the PrxOy and Si as well as between the aluminum electrode and the P[VDF/TrFE]  layer are observed. For both systems the importance of a buffer layer is discussed and its optimization is addressed, too. On both systems a very nice, as consistent, chain of improvements is shown caused by the spectroscopic controlled preparation  combined with electrical measurements in order to obtain the functionality of a given material system.</abstract>
    <identifier type="isbn">978-3-8322-8404-6</identifier>
    <enrichment key="BTU">an der BTU erstellt / created at BTU</enrichment>
    <author>
      <firstName>Karsten</firstName>
      <lastName>Henkel</lastName>
    </author>
    <submitter>
      <firstName>Karsten</firstName>
      <lastName>Henkel</lastName>
    </submitter>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>Pr2O3</value>
    </subject>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>P(VDF-TrFE)</value>
    </subject>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>capacitance-voltage</value>
    </subject>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>conductance-voltage</value>
    </subject>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>current-voltage</value>
    </subject>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>dielectric properties</value>
    </subject>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>high-k</value>
    </subject>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>feFET</value>
    </subject>
    <collection role="old_institute" number="01005">LS Angewandte Physik / Sensorik</collection>
    <collection role="institutes" number="1503">FG Angewandte Physik und Halbleiterspektroskopie</collection>
  </doc>
  <doc>
    <id>10005</id>
    <completedYear/>
    <publishedYear>2013</publishedYear>
    <thesisYearAccepted/>
    <language>eng</language>
    <pageFirst>732</pageFirst>
    <pageLast>742</pageLast>
    <pageNumber/>
    <edition/>
    <issue>4</issue>
    <volume>2013</volume>
    <type>articler</type>
    <publisherName/>
    <publisherPlace/>
    <creatingCorporation/>
    <contributingCorporation/>
    <belongsToBibliography>0</belongsToBibliography>
    <completedDate>2013-11-14</completedDate>
    <publishedDate>--</publishedDate>
    <thesisDateAccepted>--</thesisDateAccepted>
    <title language="eng">Ellipsometry and XPS comparative studies of thermal and plasma enhanced atomic layer deposited Al2O3-films</title>
    <abstract language="eng">We report on results on the preparation of thin (&lt;100 nm) aluminum oxide (Al2O3) films on silicon substrates using thermal atomic layer deposition (T-ALD) and plasma enhanced atomic layer deposition (PE-ALD) in the SENTECH SI ALD LL system. The&#13;
T-ALD Al2O3layers were deposited at  200 °C, for the PE-ALD films we varied the substrate temperature range between room temperature (rt) and  200 °C. We show data from spectroscopic ellipsometry (thickness, refractive index, growth rate) over 4” wafers and correlatethem to X-ray photoelectron spectroscopy (XPS) results. The 200°C T-ALD and PE-ALD processes yield films with similar refractive indices and with oxygen to aluminum elemental ratios very close to the stoichiometric value of 1.5.&#13;
However, in both also fragments of the precursor are integrated into the film. The PE-ALD films show an increased growth rate and&#13;
lower carbon contaminations. Reducing the deposition temperature down to rt leads to a higher content of carbon and CH-species. We also find a decrease of the refractive index and of the oxygen to aluminum elemental ratio as well as an increase of the growth rate whereas the homogeneity of the film growth is not influenced significantly. Initial state energy shifts in all PE-ALD samples are observed which we attribute to a net negative charge within the films.</abstract>
    <parentTitle language="eng">Beilstein Journal of Nanotechnology</parentTitle>
    <identifier type="doi">10.3762/bjnano.4.83</identifier>
    <identifier type="issn">2190-4286</identifier>
    <enrichment key="BTU">an der BTU erstellt / created at BTU</enrichment>
    <author>
      <firstName>Jörg</firstName>
      <lastName>Haeberle</lastName>
    </author>
    <submitter>
      <firstName>Karsten</firstName>
      <lastName>Henkel</lastName>
    </submitter>
    <author>
      <firstName>Karsten</firstName>
      <lastName>Henkel</lastName>
    </author>
    <author>
      <firstName>Hassan</firstName>
      <lastName>Gargouri</lastName>
    </author>
    <author>
      <firstName>Franziska</firstName>
      <lastName>Naumann</lastName>
    </author>
    <author>
      <firstName>Bernd</firstName>
      <lastName>Gruska</lastName>
    </author>
    <author>
      <firstName>Michael</firstName>
      <lastName>Arens</lastName>
    </author>
    <author>
      <firstName>Massimo</firstName>
      <lastName>Tallarida</lastName>
    </author>
    <author>
      <firstName>Dieter</firstName>
      <lastName>Schmeißer</lastName>
    </author>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>Al2O3</value>
    </subject>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>ALD</value>
    </subject>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>ellipsometry</value>
    </subject>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>PE-ALD</value>
    </subject>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>XPS</value>
    </subject>
    <collection role="old_institute" number="01005">LS Angewandte Physik / Sensorik</collection>
    <collection role="institutes" number="1503">FG Angewandte Physik und Halbleiterspektroskopie</collection>
  </doc>
  <doc>
    <id>10043</id>
    <completedYear/>
    <publishedYear>2014</publishedYear>
    <thesisYearAccepted/>
    <language>eng</language>
    <pageFirst>01A107-1</pageFirst>
    <pageLast>01A107-10</pageLast>
    <pageNumber/>
    <edition/>
    <issue>32</issue>
    <volume>1</volume>
    <type>articler</type>
    <publisherName/>
    <publisherPlace/>
    <creatingCorporation/>
    <contributingCorporation/>
    <belongsToBibliography>0</belongsToBibliography>
    <completedDate>2013-11-19</completedDate>
    <publishedDate>--</publishedDate>
    <thesisDateAccepted>--</thesisDateAccepted>
    <title language="eng">Capacitance and conductance versus voltage characterization of Al2O3 layers prepared by PE-ALD at 25°C ≤ T ≤ 200°C</title>
    <abstract language="eng">In this work, plasma enhanced atomic layer deposited (PE-ALD) samples were prepared at substrate temperatures in the range between room temperature (RT) and 200 °C and investigated by capacitance–voltage and conductance–voltage recordings. The measurements are compared to standard thermal atomic layer deposition (T-ALD) at 200 °C. Very low interface state density (D it) ~1011 eV−1 cm−2 could be achieved for the PE-ALD process at 200 °C substrate temperature after postdeposition anneal (PDA) in forming gas at 450 °C. The PDA works very effectively for both the PE-ALD and T-ALD at 200 °C substrate temperature delivering also similar values of negative fixed charge density (N fix) around −2.5 × 1012 cm−2. At the substrate temperature of 150 °C, highest N fix (−2.9 × 1012 cm−2) and moderate D it (2.7 × 1011 eV−1 cm−2) values were observed. The as deposited PE-ALD layer at RT shows both low D it in the range of (1 to 3) × 1011 eV−1 cm−2 and low N fix (−4.4 × 1011 cm−2) at the same time. The dependencies of N fix, D it, and relative permittivity on the substrate temperatures and its adjustability are discussed.</abstract>
    <parentTitle language="eng">Journal of Vacuum Science and Technology A</parentTitle>
    <identifier type="doi">10.1116/1.4831897</identifier>
    <identifier type="url">http://link.aip.org/link/?JVA/32/01A107&amp;aemail=author</identifier>
    <enrichment key="BTU">an der BTU erstellt / created at BTU</enrichment>
    <author>
      <firstName>Karsten</firstName>
      <lastName>Henkel</lastName>
    </author>
    <submitter>
      <firstName>Karsten</firstName>
      <lastName>Henkel</lastName>
    </submitter>
    <author>
      <firstName>Hassan</firstName>
      <lastName>Gargouri</lastName>
    </author>
    <author>
      <firstName>Bernd</firstName>
      <lastName>Gruska</lastName>
    </author>
    <author>
      <firstName>Michael</firstName>
      <lastName>Arens</lastName>
    </author>
    <author>
      <firstName>Massimo</firstName>
      <lastName>Tallarida</lastName>
    </author>
    <author>
      <firstName>Dieter</firstName>
      <lastName>Schmeißer</lastName>
    </author>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>Atomic layer deposition (ALD)</value>
    </subject>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>Al2O3</value>
    </subject>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>dielectric properties</value>
    </subject>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>interface state density</value>
    </subject>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>fixed oxide charge</value>
    </subject>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>permittivity</value>
    </subject>
    <collection role="old_institute" number="01005">LS Angewandte Physik / Sensorik</collection>
    <collection role="institutes" number="1503">FG Angewandte Physik und Halbleiterspektroskopie</collection>
  </doc>
  <doc>
    <id>10612</id>
    <completedYear/>
    <publishedYear>2014</publishedYear>
    <thesisYearAccepted/>
    <language>deu</language>
    <pageFirst>7</pageFirst>
    <pageLast>14</pageLast>
    <pageNumber/>
    <edition/>
    <issue/>
    <volume/>
    <type>conferenceobject</type>
    <publisherName>Cottbus-Senftenberg</publisherName>
    <publisherPlace>BTU</publisherPlace>
    <creatingCorporation/>
    <contributingCorporation/>
    <belongsToBibliography>0</belongsToBibliography>
    <completedDate>2014-04-24</completedDate>
    <publishedDate>--</publishedDate>
    <thesisDateAccepted>--</thesisDateAccepted>
    <title language="deu">PE-ALD-Al2O3-Schichten für die Passivierung von Solarzellen</title>
    <abstract language="deu">Dünne Al2O3-Schichten wurden bei Substrattemperaturen zwischen Raumtemperatur und 200°C mittels PE-ALD auf Si-Substraten abgeschieden und ellipsometrisch, spektroskopisch und elektrisch charakterisiert. Ihr Potenzial für die chemische und Feldeffektpassivierung der Oberflächenrekombination wird bewertet.</abstract>
    <parentTitle language="deu">Tagungsband Photovoltaik-Meeting: Anwendungen-Qualität-Perspektiven, Senftenberg, 16.04.2014</parentTitle>
    <enrichment key="BTU">an der BTU erstellt / created at BTU</enrichment>
    <author>
      <firstName>Karsten</firstName>
      <lastName>Henkel</lastName>
    </author>
    <editor>
      <firstName>Bernhard K.</firstName>
      <lastName>Glück</lastName>
    </editor>
    <submitter>
      <firstName>Karsten</firstName>
      <lastName>Henkel</lastName>
    </submitter>
    <author>
      <firstName>Massimo</firstName>
      <lastName>Tallarida</lastName>
    </author>
    <editor>
      <firstName>Sindy</firstName>
      <lastName>Schmidt</lastName>
    </editor>
    <author>
      <firstName>Jörg</firstName>
      <lastName>Haeberle</lastName>
    </author>
    <editor>
      <firstName>Erhard</firstName>
      <lastName>Stein</lastName>
    </editor>
    <author>
      <firstName>Hassan</firstName>
      <lastName>Gargouri</lastName>
    </author>
    <editor>
      <firstName>Jörg-Uwe</firstName>
      <lastName>Raschke</lastName>
    </editor>
    <author>
      <firstName>Franziska</firstName>
      <lastName>Naumann</lastName>
    </author>
    <editor>
      <firstName>Hans</firstName>
      <lastName>Richter</lastName>
    </editor>
    <author>
      <firstName>Bernd</firstName>
      <lastName>Gruska</lastName>
    </author>
    <author>
      <firstName>Michael</firstName>
      <lastName>Arens</lastName>
    </author>
    <author>
      <firstName>Dieter</firstName>
      <lastName>Schmeißer</lastName>
    </author>
    <subject>
      <language>deu</language>
      <type>uncontrolled</type>
      <value>Al2O3</value>
    </subject>
    <subject>
      <language>deu</language>
      <type>uncontrolled</type>
      <value>Atomlagenabscheidung (ALD)</value>
    </subject>
    <subject>
      <language>deu</language>
      <type>uncontrolled</type>
      <value>Passivierung</value>
    </subject>
    <subject>
      <language>deu</language>
      <type>uncontrolled</type>
      <value>PE-ALD</value>
    </subject>
    <subject>
      <language>deu</language>
      <type>uncontrolled</type>
      <value>negative fixe Oxidladungen</value>
    </subject>
    <collection role="old_institute" number="01005">LS Angewandte Physik / Sensorik</collection>
    <collection role="institutes" number="1503">FG Angewandte Physik und Halbleiterspektroskopie</collection>
  </doc>
  <doc>
    <id>10721</id>
    <completedYear/>
    <publishedYear>2014</publishedYear>
    <thesisYearAccepted/>
    <language>eng</language>
    <pageFirst>10403</pageFirst>
    <pageLast>10407</pageLast>
    <pageNumber/>
    <edition/>
    <issue>16</issue>
    <volume>2014</volume>
    <type>articler</type>
    <publisherName/>
    <publisherPlace/>
    <creatingCorporation/>
    <contributingCorporation/>
    <belongsToBibliography>0</belongsToBibliography>
    <completedDate>2014-05-16</completedDate>
    <publishedDate>--</publishedDate>
    <thesisDateAccepted>--</thesisDateAccepted>
    <title language="eng">Improved performance of a polymer nanogenerator based on silver nanoparticles doped electrospun P(VDF–HFP) nanofibers</title>
    <abstract language="eng">We report on the electrospinning of poly(vinylidene fluoride–hexafluoropropylene) [P(VDF–HFP)] nanofibers doped with silver nanoparticles for the preparation of a polymer based nanogenerator (PNG). It has been found that the yield of the piezoelectric phase is increased by the addition of silver nanoparticles. Furthermore, defects in the P(VDF–HFP) electrospun fibers are removed resulting in a significant enhancement in the output power of the PNG. A maximum generated PNG output voltage of 3 V with a current density of 0.9 μA cm−2 is achieved.</abstract>
    <parentTitle language="eng">Physical Chemistry Chemical Physics</parentTitle>
    <identifier type="doi">10.1039/C3CP55238A</identifier>
    <identifier type="issn">1463-9084</identifier>
    <identifier type="issn">1463-9076</identifier>
    <enrichment key="BTU">an der BTU erstellt / created at BTU</enrichment>
    <author>
      <firstName>Dipankar</firstName>
      <lastName>Mandal</lastName>
    </author>
    <submitter>
      <firstName>Karsten</firstName>
      <lastName>Henkel</lastName>
    </submitter>
    <author>
      <firstName>Karsten</firstName>
      <lastName>Henkel</lastName>
    </author>
    <author>
      <firstName>Dieter</firstName>
      <lastName>Schmeißer</lastName>
    </author>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>piezoelectric thin polymer film</value>
    </subject>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>FTIR</value>
    </subject>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>nanogenerator</value>
    </subject>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>PVDF</value>
    </subject>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>P(VDF-HFP)</value>
    </subject>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>nanofibers</value>
    </subject>
    <collection role="old_institute" number="01005">LS Angewandte Physik / Sensorik</collection>
    <collection role="institutes" number="1503">FG Angewandte Physik und Halbleiterspektroskopie</collection>
  </doc>
  <doc>
    <id>12895</id>
    <completedYear/>
    <publishedYear>2015</publishedYear>
    <thesisYearAccepted/>
    <language>eng</language>
    <pageFirst>01A144-1</pageFirst>
    <pageLast>01A144-8</pageLast>
    <pageNumber/>
    <edition/>
    <issue>33</issue>
    <volume>2015</volume>
    <type>articler</type>
    <publisherName/>
    <publisherPlace/>
    <creatingCorporation/>
    <contributingCorporation/>
    <belongsToBibliography>0</belongsToBibliography>
    <completedDate>2015-01-05</completedDate>
    <publishedDate>--</publishedDate>
    <thesisDateAccepted>--</thesisDateAccepted>
    <title language="eng">Thermal and plasma enhanced atomic layer deposition of TiO2: Comparison of spectroscopic and electric properties</title>
    <abstract language="eng">Titanium oxide (TiO2) deposited by atomic layer deposition (ALD) is used as a protective layer in&#13;
photocatalytic water splitting system as well as a dielectric in resistive memory switching. The way&#13;
ALD is performed (thermally or plasma-assisted) may change the growth rate as well as the electronic properties of the deposited films. In the present work, the authors verify the influence of the ALD mode on functional parameters, by comparing the growth rate and electronic properties of&#13;
TiO2 films deposited by thermal (T-) and plasma-enhanced (PE-) ALD. The authors complete the&#13;
study with the electrical characterization of selected samples by means of capacitance–voltage and&#13;
current–voltage measurements. In all samples, the authors found a significant presence of Ti3+ states, with the lowest content in the PE-ALD grown TiO2 films. The observation of Ti3+ states&#13;
was accompanied by the presence of in-gap states above the valence band maximum. For films thinner than 10 nm, the authors found also a strong leakage current. Also in this case, the PE-ALD films showed the weakest leakage currents, showing a correlation between the presence of Ti3+ states and leakage current density.</abstract>
    <parentTitle language="eng">Journal of Vacuum Science and Technology A</parentTitle>
    <identifier type="doi">10.1116/1.4903938</identifier>
    <identifier type="issn">1520-8559</identifier>
    <identifier type="issn">0734-2101</identifier>
    <enrichment key="BTU">an der BTU erstellt / created at BTU</enrichment>
    <author>
      <firstName>Chittaranjan</firstName>
      <lastName>Das</lastName>
    </author>
    <submitter>
      <firstName>Karsten</firstName>
      <lastName>Henkel</lastName>
    </submitter>
    <author>
      <firstName>Karsten</firstName>
      <lastName>Henkel</lastName>
    </author>
    <author>
      <firstName>Massimo</firstName>
      <lastName>Tallarida</lastName>
    </author>
    <author>
      <firstName>Dieter</firstName>
      <lastName>Schmeißer</lastName>
    </author>
    <author>
      <firstName>Hassan</firstName>
      <lastName>Gargouri</lastName>
    </author>
    <author>
      <firstName>Irina</firstName>
      <lastName>Kärkkänen</lastName>
    </author>
    <author>
      <firstName>Jessica</firstName>
      <lastName>Schneidewind</lastName>
    </author>
    <author>
      <firstName>Bernd</firstName>
      <lastName>Gruska</lastName>
    </author>
    <author>
      <firstName>Michael</firstName>
      <lastName>Arens</lastName>
    </author>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>titanium oxide (TiO2)</value>
    </subject>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>atomic layer deposition</value>
    </subject>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>plasma enhanced atomic layer deposition</value>
    </subject>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>synchrotron radiation photoelectron spectroscopy (SR-PES)</value>
    </subject>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>x-ray absorption spectroscopy</value>
    </subject>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>capacitance-voltage (CV)</value>
    </subject>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>current-voltage (IV)</value>
    </subject>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>ellipsometry</value>
    </subject>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>in-gap states</value>
    </subject>
    <collection role="old_institute" number="01005">LS Angewandte Physik / Sensorik</collection>
    <collection role="institutes" number="1503">FG Angewandte Physik und Halbleiterspektroskopie</collection>
  </doc>
  <doc>
    <id>13424</id>
    <completedYear/>
    <publishedYear>2015</publishedYear>
    <thesisYearAccepted/>
    <language>eng</language>
    <pageFirst>1298</pageFirst>
    <pageLast>1307</pageLast>
    <pageNumber/>
    <edition/>
    <issue>7</issue>
    <volume>2015</volume>
    <type>articler</type>
    <publisherName/>
    <publisherPlace/>
    <creatingCorporation/>
    <contributingCorporation/>
    <belongsToBibliography>0</belongsToBibliography>
    <completedDate>2015-01-26</completedDate>
    <publishedDate>--</publishedDate>
    <thesisDateAccepted>--</thesisDateAccepted>
    <title language="eng">Self-Poled Transparent and Flexible UV Light-Emitting Cerium Complex–PVDF Composite: A High-Performance Nanogenerator</title>
    <abstract language="eng">Cerium(III)-,N-dimethylformamide-bisulfate&#13;
[Ce(DMF)(HSO4)3] complex is doped into poly(vinylidene&#13;
fluoride) (PVDF) to induce a higher yield (99%) of the&#13;
electroactive phases (β- and γ-phases) of PVDF. A remarkable enhancement of the output voltage (∼32 V) of a nano-generator (NG) based on a nonelectrically poled cerium(III) complex containing PVDF composite film is achieved by&#13;
simple repeated human finger imparting, whereas neat PVDF&#13;
does not show this kind of behavior. This high electrical output resembles the generation of self-poled electroactiveβ-phase in&#13;
PVDF due to the electrostatic interactions between the fluoride of PVDF and the surface-active positive charge cloud of the&#13;
cerium complex via H-bonding and/or bipolar interaction among the opposite poles of cerium complex and PVDF, respectively.&#13;
The capacitor charging capability of the flexible NG promises its applicability as piezoelectric-based energy harvester. The cerium(III) complex doped PVDF composite film exhibit an intense photoluminescence in the UV region, which might be due to&#13;
a participation of electron cloud from negative pole of bipolarized PVDF. This fact may open a new area for prospective development of high-performance energy-saving flexible solid-state UV light emitters.</abstract>
    <parentTitle language="eng">ACS Applied Materials &amp; Interfaces</parentTitle>
    <identifier type="doi">10.1021/am507522r</identifier>
    <identifier type="issn">1944-8244</identifier>
    <identifier type="issn">1944-8252</identifier>
    <enrichment key="BTU">an der BTU erstellt / created at BTU</enrichment>
    <author>
      <firstName>Samiran</firstName>
      <lastName>Garain</lastName>
    </author>
    <submitter>
      <firstName>Karsten</firstName>
      <lastName>Henkel</lastName>
    </submitter>
    <author>
      <firstName>Tridib Kumar</firstName>
      <lastName>Sinha</lastName>
    </author>
    <author>
      <firstName>Prakriti</firstName>
      <lastName>Adhikary</lastName>
    </author>
    <author>
      <firstName>Karsten</firstName>
      <lastName>Henkel</lastName>
    </author>
    <author>
      <firstName>Shrabanee</firstName>
      <lastName>Sen</lastName>
    </author>
    <author>
      <firstName>Shanker</firstName>
      <lastName>Ram</lastName>
    </author>
    <author>
      <firstName>Chittaranjan</firstName>
      <lastName>Sinha</lastName>
    </author>
    <author>
      <firstName>Dieter</firstName>
      <lastName>Schmeißer</lastName>
    </author>
    <author>
      <firstName>Dipankar</firstName>
      <lastName>Mandal</lastName>
    </author>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>PVDF</value>
    </subject>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>electroactive phase</value>
    </subject>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>nanogenerator</value>
    </subject>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>cerium charge transfer complex</value>
    </subject>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>piezoelectric energy harvester</value>
    </subject>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>UV-emitter</value>
    </subject>
    <collection role="old_institute" number="01005">LS Angewandte Physik / Sensorik</collection>
    <collection role="institutes" number="1503">FG Angewandte Physik und Halbleiterspektroskopie</collection>
  </doc>
  <doc>
    <id>13786</id>
    <completedYear/>
    <publishedYear>2007</publishedYear>
    <thesisYearAccepted/>
    <language>eng</language>
    <pageFirst>S. 216</pageFirst>
    <pageLast/>
    <pageNumber/>
    <edition/>
    <issue/>
    <volume/>
    <type>conferenceobject</type>
    <publisherName>Deutsche Physikalische Gesellschaft</publisherName>
    <publisherPlace>Bad Honnef</publisherPlace>
    <creatingCorporation/>
    <contributingCorporation/>
    <belongsToBibliography>0</belongsToBibliography>
    <completedDate>2015-02-19</completedDate>
    <publishedDate>--</publishedDate>
    <thesisDateAccepted>--</thesisDateAccepted>
    <title language="eng">Buffer layer investigation of MFIS stacks with an organic ferroelectric layer</title>
    <abstract language="eng">Ferroelectric field effect transistors are considered as future non volatile and non destructive readout memory cells. Conventional Perowskite-type ferroelectric materials are shown to work but they need expensive high temperature and high partial pressure processing steps inducing also unintentional and undefined interfacial layers.A possible low cost solution is the use of poly[vinylidene fluoride trifluoroethylene (P[VDF/TrFE]). This is a ferroelectric polymer which can be spin coated at room temperature onto silicon suited with well defined buffer layers. Using P[VDF/TrFE] we focus on metal ferroelectric insulator semi-conductor (MFIS) structures. In MFIS structure a part of the programming voltage drops over the buffering insulator. We report on attempts to minimize this fraction by optimizing the voltage divider&#13;
over the buffer and the ferroelectric layers. CV measurements for different thickness of the buffer (10-235nm) and the ferroelectric layer(100nm-1μm) and for different permittivity values of the buffer layer(SiO2, Al2O3, HfO2) will be presented. This work is supported by Deutsche Forschungsgemeinschaft within priority program 1157 (DSCH 745/11-1).</abstract>
    <parentTitle language="deu">Verhandlungen der Deutschen Physikalischen Gesellschaft ; Reihe 6, Bd. 42</parentTitle>
    <identifier type="issn">0420-0195</identifier>
    <identifier type="url">http://www.dpg-verhandlungen.de/year/2007/conference/regensburg/part/df/session/11/contribution/1</identifier>
    <enrichment key="BTU">an der BTU erstellt / created at BTU</enrichment>
    <author>
      <firstName>Bernd</firstName>
      <lastName>Seime</lastName>
    </author>
    <submitter>
      <firstName>Karsten</firstName>
      <lastName>Henkel</lastName>
    </submitter>
    <author>
      <firstName>Karsten</firstName>
      <lastName>Henkel</lastName>
    </author>
    <author>
      <firstName>Ioanna</firstName>
      <lastName>Paloumpa</lastName>
    </author>
    <author>
      <firstName>Klaus</firstName>
      <lastName>Müller</lastName>
    </author>
    <author>
      <firstName>Dieter</firstName>
      <lastName>Schmeißer</lastName>
    </author>
    <collection role="old_institute" number="01005">LS Angewandte Physik / Sensorik</collection>
    <collection role="institutes" number="1503">FG Angewandte Physik und Halbleiterspektroskopie</collection>
  </doc>
  <doc>
    <id>13787</id>
    <completedYear/>
    <publishedYear>2007</publishedYear>
    <thesisYearAccepted/>
    <language>eng</language>
    <pageFirst>S. 797</pageFirst>
    <pageLast/>
    <pageNumber/>
    <edition/>
    <issue/>
    <volume/>
    <type>conferenceobject</type>
    <publisherName>Deutsche Physikalische Gesellschaft</publisherName>
    <publisherPlace>Bad Honnef</publisherPlace>
    <creatingCorporation/>
    <contributingCorporation/>
    <belongsToBibliography>0</belongsToBibliography>
    <completedDate>2015-02-19</completedDate>
    <publishedDate>--</publishedDate>
    <thesisDateAccepted>--</thesisDateAccepted>
    <title language="eng">Study of reactions at the interface P(VDF/TrFE)/Al and P(VDF/TrFE)/PEDOT:PSS</title>
    <abstract language="eng">Due to potential use in non volatile memory application, Poly(vinylidene fluoride/trifluoroethylene) (P(VDF-TrFE)) is a great deal of interest, especially to produce organic field effect transistors (OFET). Right now it was found that Aluminum is one of the cost-effective inorganic electrode candidate. On the other hand, poly(3,4 ethylenedioxythiophene):poly(4-styrenesulfonate)(PEDOT:PSS) shows promising behavior for the application as organic electrode. In part of our investigations we have systematically studied surface interactions of organic ferroelectric thin films (P(VDF-TrFE))with inorganic (Al) and organic layers (PEDOT:PSS). By X-ray photoelectron spectroscopy (XPS) is has been found that there is a interfacial reaction with Al and the copolymer. In contrast, for electrodes, made of PEDOT: PSS, we found not such kind of behavior. In this case, we found no evidence for any surface reaction. Furthermore, we present our results concerning the orientation of permanent dipoles in the co-polymer (formed between hydrogen and fluorine atom). Here, we use Near-edge X-ray absorption fine structure (NEXAFS) analysis at the U 49/2 - PGM2 beam line of the BESSY-II Synchrotron. This work is supported by Deutsche Forschungsgemeinschaft (DFG) within priority program 1157 (DSCH 745/11-1).</abstract>
    <parentTitle language="deu">Verhandlungen der Deutschen Physikalischen Gesellschaft ; Reihe 6, Bd. 42</parentTitle>
    <identifier type="issn">0420-0195</identifier>
    <identifier type="url">http://www.dpg-verhandlungen.de/year/2007/conference/regensburg/part/syoe/session/8/contribution/18</identifier>
    <enrichment key="BTU">an der BTU erstellt / created at BTU</enrichment>
    <author>
      <firstName>Dipankar</firstName>
      <lastName>Mandal</lastName>
    </author>
    <submitter>
      <firstName>Karsten</firstName>
      <lastName>Henkel</lastName>
    </submitter>
    <author>
      <firstName>Klaus</firstName>
      <lastName>Müller</lastName>
    </author>
    <author>
      <firstName>Olaf</firstName>
      <lastName>Seifarth</lastName>
    </author>
    <author>
      <firstName>Patrick</firstName>
      <lastName>Hoffman</lastName>
    </author>
    <author>
      <firstName>Karsten</firstName>
      <lastName>Henkel</lastName>
    </author>
    <author>
      <firstName>Dieter</firstName>
      <lastName>Schmeißer</lastName>
    </author>
    <collection role="old_institute" number="01005">LS Angewandte Physik / Sensorik</collection>
    <collection role="institutes" number="1503">FG Angewandte Physik und Halbleiterspektroskopie</collection>
  </doc>
  <doc>
    <id>13788</id>
    <completedYear/>
    <publishedYear>2007</publishedYear>
    <thesisYearAccepted/>
    <language>eng</language>
    <pageFirst>S. 215</pageFirst>
    <pageLast/>
    <pageNumber/>
    <edition/>
    <issue/>
    <volume/>
    <type>conferenceobject</type>
    <publisherName>Deutsche Physikalische Gesellschaft</publisherName>
    <publisherPlace>Bad Honnef</publisherPlace>
    <creatingCorporation/>
    <contributingCorporation/>
    <belongsToBibliography>0</belongsToBibliography>
    <completedDate>2015-02-19</completedDate>
    <publishedDate>--</publishedDate>
    <thesisDateAccepted>--</thesisDateAccepted>
    <title language="eng">PrOx/AlON stacks as a high-k candidate on SiC</title>
    <abstract language="eng">We study the chemical stability and electrical properties of Pr-oxides-SiC MIS stacks. In MISFET devices for high power applications the electric field scaling at the interface between semiconductor and insulator is determined by the ratio of their permittivity values. A high-k material can be used to optimize the performance of such devices. In previous studies we had to understand that the chemical reactivity of the PrOx/SiC interface causes a destructive interaction yielding silicate and graphite formation as well as poor electrical performance after direct deposition of PrOx onto SiC. Therefore we introduced an additional chemically inert layer and in this contribution we focus on PrOx/AlON as a suitable insulator stack. In our spectroscopic investigations we recognized a stable AlON/3C-SiC interface even for annealing steps up to 900∘C. First electrical characterizations are performed on Si substrates and we find a strong improvement in the leakage current by several orders of magnitude down to values of 10−7 A/cm2 at an EOT of 4nm and interface state densities of mean values of 5*1011/eVcm2. We also report on our ongoing electrical characterization of such stacks on SiC substrates. This work is supported by Deutsche Forschungsgemeinschaft within priority program 1157 (DSCH 745/9-2).</abstract>
    <parentTitle language="deu">Verhandlungen der Deutschen Physikalischen Gesellschaft ; Reihe 6, Bd. 42</parentTitle>
    <identifier type="issn">0420-0195</identifier>
    <identifier type="url">http://www.dpg-verhandlungen.de/year/2007/conference/regensburg/part/df/session/10/contribution/8</identifier>
    <enrichment key="BTU">an der BTU erstellt / created at BTU</enrichment>
    <author>
      <firstName>Karsten</firstName>
      <lastName>Henkel</lastName>
    </author>
    <submitter>
      <firstName>Karsten</firstName>
      <lastName>Henkel</lastName>
    </submitter>
    <author>
      <firstName>Rakesh</firstName>
      <lastName>Sohal</lastName>
    </author>
    <author>
      <firstName>Mohamed</firstName>
      <lastName>Torche</lastName>
    </author>
    <author>
      <firstName>Carola</firstName>
      <lastName>Schwiertz</lastName>
    </author>
    <author>
      <firstName>Yevgen</firstName>
      <lastName>Burkov</lastName>
    </author>
    <author>
      <firstName>Dieter</firstName>
      <lastName>Schmeißer</lastName>
    </author>
    <collection role="old_institute" number="01005">LS Angewandte Physik / Sensorik</collection>
    <collection role="institutes" number="1503">FG Angewandte Physik und Halbleiterspektroskopie</collection>
  </doc>
  <doc>
    <id>13793</id>
    <completedYear/>
    <publishedYear>2008</publishedYear>
    <thesisYearAccepted/>
    <language>eng</language>
    <pageFirst>S. 243</pageFirst>
    <pageLast/>
    <pageNumber/>
    <edition/>
    <issue/>
    <volume/>
    <type>conferenceobject</type>
    <publisherName>Deutsche Physikalische Gesellschaft</publisherName>
    <publisherPlace>Bad Honnef</publisherPlace>
    <creatingCorporation/>
    <contributingCorporation/>
    <belongsToBibliography>0</belongsToBibliography>
    <completedDate>2015-02-19</completedDate>
    <publishedDate>--</publishedDate>
    <thesisDateAccepted>--</thesisDateAccepted>
    <title language="eng">X-ray photoemission spectroscopy of Aluminium Oxynitride on Si(001) and the rise as buffer layers</title>
    <abstract language="eng">Praseodymium oxide (PrxOy) is one of the candidate as high-k transistor gate dielectrics, but aluminium oxynitride (AlxONy) as buffer layer is needed to prevent diffusions from the silicon into PrxOy and to hinder charge injection from the semiconductor into the insulator. The thermal stability and thickness dependence of aluminum oxynitride (AlxONy) has been investigated by synchrotron radiation photoemission spectroscopy (SR-PES). AlxONy layers were prepared by low energy ion-beam assisted deposition (LE-IBAD) at room temperature on a silicon substrate cleaned with HF-acid. Aluminium oxynitride is stable till 800∘C. From photoemission spectra we can assess that silicon oxynitride is built as first and then the growth of AlxONy follows. Resonant inelastic X-ray scattering measurements with synchrotron radiation have been performed. The combination of X-ray absorption spectroscopy (XAS) and RIXS make possible to determinate the band gap of AlxONy.</abstract>
    <parentTitle language="deu">Verhandlungen der Deutschen Physikalischen Gesellschaft ; Reihe 6, Bd. 43</parentTitle>
    <identifier type="issn">0420-0195</identifier>
    <identifier type="url">http://www.dpg-verhandlungen.de/year/2008/conference/berlin/part/ds/session/23/contribution/5</identifier>
    <enrichment key="BTU">an der BTU erstellt / created at BTU</enrichment>
    <author>
      <firstName>Yevgen</firstName>
      <lastName>Burkov</lastName>
    </author>
    <submitter>
      <firstName>Karsten</firstName>
      <lastName>Henkel</lastName>
    </submitter>
    <author>
      <firstName>Karsten</firstName>
      <lastName>Henkel</lastName>
    </author>
    <author>
      <firstName>Dieter</firstName>
      <lastName>Schmeißer</lastName>
    </author>
    <collection role="old_institute" number="01005">LS Angewandte Physik / Sensorik</collection>
    <collection role="institutes" number="1503">FG Angewandte Physik und Halbleiterspektroskopie</collection>
  </doc>
  <doc>
    <id>13794</id>
    <completedYear/>
    <publishedYear>2008</publishedYear>
    <thesisYearAccepted/>
    <language>eng</language>
    <pageFirst>S. 828</pageFirst>
    <pageLast/>
    <pageNumber/>
    <edition/>
    <issue/>
    <volume/>
    <type>conferenceobject</type>
    <publisherName>Deutsche Physikalische Gesellschaft</publisherName>
    <publisherPlace>Bad Honnef</publisherPlace>
    <creatingCorporation/>
    <contributingCorporation/>
    <belongsToBibliography>0</belongsToBibliography>
    <completedDate>2015-02-19</completedDate>
    <publishedDate>--</publishedDate>
    <thesisDateAccepted>--</thesisDateAccepted>
    <title language="eng">C(V) and C(t) measurements on MFIS structures consisting P[VDF/TrFE] as ferroelectric layer</title>
    <abstract language="eng">Ferroelectric Field Effect Transistors (FeFETs) are considered as a candidate for future non volatile and non destructive readout memory cells. A possible low cost solution is the use of poly[vinylidene fluoride trifluoroethylene (P[VDF/TrFE]). Using P[VDF/TrFE] we focus on metal ferroelectric insulator semiconductor (MFIS) capacitor structures. In this contribution we will summarize our investigations related to capacitance measurements in dependence of applied bias (C(V)) and time (C(t)). The thickness of the ferroelectric layer as well as the thickness and the material of the buffer layer have been investigated for optimization of the write voltage. CV measurements at higher temperatures deliver decreased flatband voltage shifts within one CV loop resulting in lower memory windows. At temperatures around 100∘C the hysteresis totally vanished, pointing out the ferroelectric behavior of the system. C(t) measurements at a constant bias have been performed for retention analysis of the MFIS stack. After applying a writing pulse we could distinguish between a higher and a lower capacitance state for more than 5 days. This work is supported by Deutsche Forschungsgemeinschaft within priority program 1157 (SCHM 745/11-2).</abstract>
    <parentTitle language="deu">Verhandlungen der Deutschen Physikalischen Gesellschaft ; Reihe 6, Bd. 43</parentTitle>
    <identifier type="issn">0420-0195</identifier>
    <identifier type="url">http://www.dpg-verhandlungen.de/year/2008/conference/berlin/part/sysa/session/4/contribution/7</identifier>
    <enrichment key="BTU">an der BTU erstellt / created at BTU</enrichment>
    <author>
      <firstName>Karsten</firstName>
      <lastName>Henkel</lastName>
    </author>
    <submitter>
      <firstName>Karsten</firstName>
      <lastName>Henkel</lastName>
    </submitter>
    <author>
      <firstName>Bernd</firstName>
      <lastName>Seime</lastName>
    </author>
    <author>
      <firstName>Ioanna</firstName>
      <lastName>Paloumpa</lastName>
    </author>
    <author>
      <firstName>Klaus</firstName>
      <lastName>Müller</lastName>
    </author>
    <author>
      <firstName>Dieter</firstName>
      <lastName>Schmeißer</lastName>
    </author>
    <collection role="old_institute" number="01005">LS Angewandte Physik / Sensorik</collection>
    <collection role="institutes" number="1503">FG Angewandte Physik und Halbleiterspektroskopie</collection>
  </doc>
  <doc>
    <id>13797</id>
    <completedYear/>
    <publishedYear>2008</publishedYear>
    <thesisYearAccepted/>
    <language>eng</language>
    <pageFirst>S. 830</pageFirst>
    <pageLast/>
    <pageNumber/>
    <edition/>
    <issue/>
    <volume/>
    <type>conferenceobject</type>
    <publisherName>Deutsche Physikalische Gesellschaft</publisherName>
    <publisherPlace>Bad Honnef</publisherPlace>
    <creatingCorporation/>
    <contributingCorporation/>
    <belongsToBibliography>0</belongsToBibliography>
    <completedDate>2015-02-19</completedDate>
    <publishedDate>--</publishedDate>
    <thesisDateAccepted>--</thesisDateAccepted>
    <title language="eng">Interface reactions of ferroelectric copolymer layers with different electrode materials</title>
    <abstract language="eng">The ferroelectric copolymer poly(vinylidene fluoride trifluoroethylene) (P(VDF-TrFE)) is a possible material for low cost applications as organic nonvolatile memory element. We present an XPS interface investigation of the copolymer/electrode interface. Below 100nm film thickness, interface phenomena becomes important. Possible interface reactions could lead to a reduction of the ferroelectric functionality.We present a comparative study of the two interfaces Al/P(VDF-TrFE) and PEDOT:PSS/P(VDF-TrFE). The result is a clear indication of a surface reaction in between the Aluminum-electrodes. In contrast, for PEDOT:PSS the measurements shows a layer by layer formation of the interface PEDOT:PSS/PVDF without any reaction. Second, we present a study of remanent polarization of ultrathin spincoated films of the copolymer, in a thickness range from 5 to 100mn, with organic electrodes like PEDOT:PSS. The measurements are carried out by using the flatband shift of a capacitance-voltage (CV) characteristic. This shift of flatband voltage is used as value for the electric polarization of the polymer.</abstract>
    <parentTitle language="deu">Verhandlungen der Deutschen Physikalischen Gesellschaft ; Reihe 6, Bd. 43</parentTitle>
    <identifier type="issn">0420-0195</identifier>
    <identifier type="url">http://www.dpg-verhandlungen.de/year/2008/conference/berlin/part/sysa/session/5/contribution/16</identifier>
    <enrichment key="BTU">an der BTU erstellt / created at BTU</enrichment>
    <author>
      <firstName>Klaus</firstName>
      <lastName>Müller</lastName>
    </author>
    <submitter>
      <firstName>Karsten</firstName>
      <lastName>Henkel</lastName>
    </submitter>
    <author>
      <firstName>Dipankar</firstName>
      <lastName>Mandal</lastName>
    </author>
    <author>
      <firstName>Karsten</firstName>
      <lastName>Henkel</lastName>
    </author>
    <author>
      <firstName>Ioanna</firstName>
      <lastName>Paloumpa</lastName>
    </author>
    <author>
      <firstName>Dieter</firstName>
      <lastName>Schmeißer</lastName>
    </author>
    <collection role="old_institute" number="01005">LS Angewandte Physik / Sensorik</collection>
    <collection role="institutes" number="1503">FG Angewandte Physik und Halbleiterspektroskopie</collection>
  </doc>
  <doc>
    <id>13779</id>
    <completedYear/>
    <publishedYear>2006</publishedYear>
    <thesisYearAccepted/>
    <language>eng</language>
    <pageFirst>S. 127</pageFirst>
    <pageLast/>
    <pageNumber/>
    <edition/>
    <issue/>
    <volume/>
    <type>conferenceobject</type>
    <publisherName>Deutsche Physikalische Gesellschaft</publisherName>
    <publisherPlace>Bad Honnef</publisherPlace>
    <creatingCorporation/>
    <contributingCorporation/>
    <belongsToBibliography>0</belongsToBibliography>
    <completedDate>2015-02-19</completedDate>
    <publishedDate>--</publishedDate>
    <thesisDateAccepted>--</thesisDateAccepted>
    <title language="eng">Inorganic and organic layers for high-k and organic memory applications</title>
    <abstract language="eng">We report about organic and inorganic MIS stacks for new possibilities for high frequency and high power applications as well as for non volatile memory cell. The organic stack contains a ferroelectric polymer as the&#13;
functional layer. Poly[vinylidene fluoride trifluoroethylene] (P[VDF/TrFE]) is spin&#13;
coated from a solution onto oxidised silicon substrates. We report on the polarisation induced flatband voltage shifts. For the inorganic stack our attempt is to combine higk-k dielectrics&#13;
with high band gap semiconductors (SiC). Praseodymium oxide layers are&#13;
prepared by electron beam evaporation from Pr6O11&#13;
powder and in situ&#13;
controlling of interface and volume composition (XPS). Praseodymium silicate layers were prepared either by metal evaporation onto a thin ox-&#13;
ide on top of the semiconductor and following annealing steps or by a&#13;
wet chemical process out of aqueous Pr(NO3)3 solutions. Using spectro-scopic characterisation we investigate the stability of the various inter-faces within the stacks as well as the reactivity of the metal electrodes on thin Pr2O3. We report the results of electrical characterisation consisting of permittivity values, leakage current and density of interface states.</abstract>
    <parentTitle language="eng">Verhandlungen der Deutschen Physikalischen Gesellschaft, Reihe 6, Bd. 41</parentTitle>
    <identifier type="issn">0420-0195</identifier>
    <identifier type="url">http://www.dpg-verhandlungen.de/year/2006/conference/dresden/part/df/session/1/contribution/4</identifier>
    <enrichment key="BTU">an der BTU erstellt / created at BTU</enrichment>
    <author>
      <firstName>Karsten</firstName>
      <lastName>Henkel</lastName>
    </author>
    <submitter>
      <firstName>Karsten</firstName>
      <lastName>Henkel</lastName>
    </submitter>
    <author>
      <firstName>Mohamed</firstName>
      <lastName>Torche</lastName>
    </author>
    <author>
      <firstName>Carola</firstName>
      <lastName>Schwiertz</lastName>
    </author>
    <author>
      <firstName>Ioanna</firstName>
      <lastName>Paloumpa</lastName>
    </author>
    <author>
      <firstName>Rakesh</firstName>
      <lastName>Sohal</lastName>
    </author>
    <author>
      <firstName>Klaus</firstName>
      <lastName>Müller</lastName>
    </author>
    <author>
      <firstName>Dieter</firstName>
      <lastName>Schmeißer</lastName>
    </author>
    <collection role="old_institute" number="01005">LS Angewandte Physik / Sensorik</collection>
    <collection role="institutes" number="1503">FG Angewandte Physik und Halbleiterspektroskopie</collection>
  </doc>
  <doc>
    <id>13780</id>
    <completedYear/>
    <publishedYear>2006</publishedYear>
    <thesisYearAccepted/>
    <language>eng</language>
    <pageFirst>S. 101</pageFirst>
    <pageLast/>
    <pageNumber/>
    <edition/>
    <issue/>
    <volume/>
    <type>conferenceobject</type>
    <publisherName>Deutsche Physikalische Gesellschaft</publisherName>
    <publisherPlace>Bad Honnef</publisherPlace>
    <creatingCorporation/>
    <contributingCorporation/>
    <belongsToBibliography>0</belongsToBibliography>
    <completedDate>2015-02-19</completedDate>
    <publishedDate>--</publishedDate>
    <thesisDateAccepted>--</thesisDateAccepted>
    <title language="eng">P(VDF/TrFE) as ferroelectric insulation layer for organic field effect transistors</title>
    <abstract language="eng">The ferroelectric polymer poly(vinylidene fluoride trifluoroethylene)(P(VDF-TrFE)) is used as insulating material for organic field effect tran-sistors (OFET) and metal-insulator-semiconductor (MIS)-structures. For the MIS-structures, we find the typical hysteresis in the CV charac-teristic upon increasing the voltage scan window. Based on these results, we fabricate OFET with regioregular poly(3-hexlythiophene)(P3HT) as organic semiconductor. The transistors are constructed in bottom gate architecture with thin layers of spincoated P(VDF-TrFE) as gate&#13;
insulation (100nm). The drain-source current of the OFET is reversible affected by the polarized gate, which gives opportunities for organic&#13;
nonvolatile memory elements. We present characteristic features like the hysteretic drain current response or the data retention. Furthermore,&#13;
we present measurements with Kelvin probe force microscopy, a method which gives informations on the lateral distributions of the surface potential.</abstract>
    <parentTitle language="deu">Verhandlungen der Deutschen Physikalischen Gesellschaft ; Reihe 6, Bd. 41</parentTitle>
    <identifier type="issn">0420-0195</identifier>
    <identifier type="url">http://www.dpg-verhandlungen.de/year/2006/conference/dresden/part/cpp/session/23/contribution/28</identifier>
    <enrichment key="BTU">an der BTU erstellt / created at BTU</enrichment>
    <author>
      <firstName>Klaus</firstName>
      <lastName>Müller</lastName>
    </author>
    <submitter>
      <firstName>Karsten</firstName>
      <lastName>Henkel</lastName>
    </submitter>
    <author>
      <firstName>Karsten</firstName>
      <lastName>Henkel</lastName>
    </author>
    <author>
      <firstName>Ioanna</firstName>
      <lastName>Paloumpa</lastName>
    </author>
    <author>
      <firstName>Dieter</firstName>
      <lastName>Schmeißer</lastName>
    </author>
    <collection role="old_institute" number="01005">LS Angewandte Physik / Sensorik</collection>
    <collection role="institutes" number="1503">FG Angewandte Physik und Halbleiterspektroskopie</collection>
  </doc>
  <doc>
    <id>13815</id>
    <completedYear/>
    <publishedYear>2009</publishedYear>
    <thesisYearAccepted/>
    <language>eng</language>
    <pageFirst>S. 671</pageFirst>
    <pageLast/>
    <pageNumber/>
    <edition/>
    <issue/>
    <volume/>
    <type>conferenceobject</type>
    <publisherName>Deutsche Physikalische Gesellschaft</publisherName>
    <publisherPlace>Bad Honnef</publisherPlace>
    <creatingCorporation/>
    <contributingCorporation/>
    <belongsToBibliography>0</belongsToBibliography>
    <completedDate>2015-02-20</completedDate>
    <publishedDate>--</publishedDate>
    <thesisDateAccepted>--</thesisDateAccepted>
    <title language="eng">Temperature dependence of organic solar cell parameters</title>
    <abstract language="eng">The influence of an annealing step on the parameters of bulk heterojunction organic solar cells is investigated. In order to fabricate the solar cells we use glass coated with ITO (Indiumtinoxide) as a substrate on which the active layer consisting of P3HT and PCBM is spincoated. Al-electrodes are evaporated on top of the active layer. We use PEDOT:PSS as buffer layer. Each sample is annealed at different temperatures for a short time. Between every temperature step the I-V characteristic of the cell is measured. The following parameters are derived afterwards: FF, Isc (density), Voc. Also the efficiency is estimated. The results show a maximum cell efficiency for drying at 100°C for 20sec. A further important step for preparation is the drying procedure of the PEDOT:PSS layer. Here an improvement of about 50% in cell efficiency is measured after drying at 50°C for 5 days under inert gas atmosphere.</abstract>
    <parentTitle language="deu">Verhandlungen der Deutschen Physikalischen Gesellschaft ; Reihe 6, Bd. 44</parentTitle>
    <identifier type="issn">0420-0195</identifier>
    <identifier type="url">http://www.dpg-verhandlungen.de/year/2009/conference/dresden/part/syop/session/4/contribution/2</identifier>
    <enrichment key="BTU">an der BTU erstellt / created at BTU</enrichment>
    <author>
      <firstName>Matthias</firstName>
      <lastName>Richter</lastName>
    </author>
    <submitter>
      <firstName>Karsten</firstName>
      <lastName>Henkel</lastName>
    </submitter>
    <author>
      <firstName>Klaus</firstName>
      <lastName>Müller</lastName>
    </author>
    <author>
      <firstName>Shine</firstName>
      <lastName>Philip</lastName>
    </author>
    <author>
      <firstName>Ioanna</firstName>
      <lastName>Paloumpa</lastName>
    </author>
    <author>
      <firstName>Karsten</firstName>
      <lastName>Henkel</lastName>
    </author>
    <author>
      <firstName>Dieter</firstName>
      <lastName>Schmeißer</lastName>
    </author>
    <collection role="old_institute" number="01005">LS Angewandte Physik / Sensorik</collection>
    <collection role="institutes" number="1503">FG Angewandte Physik und Halbleiterspektroskopie</collection>
  </doc>
  <doc>
    <id>13835</id>
    <completedYear/>
    <publishedYear>2011</publishedYear>
    <thesisYearAccepted/>
    <language>eng</language>
    <pageFirst>S. 483</pageFirst>
    <pageLast/>
    <pageNumber/>
    <edition/>
    <issue/>
    <volume/>
    <type>conferenceobject</type>
    <publisherName>Deutsche Physikalische Gesellschaft</publisherName>
    <publisherPlace>Bad Honnef</publisherPlace>
    <creatingCorporation/>
    <contributingCorporation/>
    <belongsToBibliography>0</belongsToBibliography>
    <completedDate>2015-02-20</completedDate>
    <publishedDate>--</publishedDate>
    <thesisDateAccepted>--</thesisDateAccepted>
    <title language="eng">Spectroscopic and microscopic characterization of potential catalysts for the hydrogenation of CO2</title>
    <abstract language="eng">The reduction of CO2 emissions is a general demand of the society in order to avoid irreversible climate changes. We are investigating potential catalysts for the hydrogenation of CO2 in particular for its application in the so called oxyfuel combustion process.&#13;
&#13;
In order to understand the catalytic behavior of the investigated materials we use the techniques X-Ray Photoemission (XPS) and -absorption (XAS) Spectroscopy as well as X-Ray Diffraction (XRD) and Scanning Electron Microscopy (SEM). The prospective of our work is to figure out the electronic and structural properties of the material and to optimize proper catalysts or design new ones for best catalytic activity. Beside the spectro-microscopic investigations the catalysts are tested under Sabatier reaction conditions in terms of activity, stability and sensitivity against poisoning. In our preliminary work we constructed a Sabatier reactor system with analytical parts based on infrared absorption and mass spectroscopy modules. First spectroscopic and catalytic results achieved on a commercially available Ru/Al2O3 catalyst will be presented.</abstract>
    <parentTitle language="deu">Verhandlungen der Deutschen Physikalischen Gesellschaft, Reihe 6, Bd. 46</parentTitle>
    <identifier type="issn">0420-0195</identifier>
    <identifier type="url">http://www.dpg-verhandlungen.de/year/2011/conference/dresden/part/o/session/60/contribution/123</identifier>
    <enrichment key="BTU">an der BTU erstellt / created at BTU</enrichment>
    <author>
      <firstName>David</firstName>
      <lastName>Hoffmannbeck</lastName>
    </author>
    <submitter>
      <firstName>Karsten</firstName>
      <lastName>Henkel</lastName>
    </submitter>
    <author>
      <firstName>Matthias</firstName>
      <lastName>Richter</lastName>
    </author>
    <author>
      <firstName>Matthias</firstName>
      <lastName>Städter</lastName>
    </author>
    <author>
      <firstName>Ioanna</firstName>
      <lastName>Paloumpa</lastName>
    </author>
    <author>
      <firstName>Karsten</firstName>
      <lastName>Henkel</lastName>
    </author>
    <author>
      <firstName>Dieter</firstName>
      <lastName>Schmeißer</lastName>
    </author>
    <collection role="old_institute" number="01005">LS Angewandte Physik / Sensorik</collection>
    <collection role="institutes" number="1503">FG Angewandte Physik und Halbleiterspektroskopie</collection>
  </doc>
  <doc>
    <id>13837</id>
    <completedYear/>
    <publishedYear>2011</publishedYear>
    <thesisYearAccepted/>
    <language>eng</language>
    <pageFirst>S. 483</pageFirst>
    <pageLast/>
    <pageNumber/>
    <edition/>
    <issue/>
    <volume/>
    <type>conferenceobject</type>
    <publisherName>Deutsche Physikalische Gesellschaft</publisherName>
    <publisherPlace>Bad Honnef</publisherPlace>
    <creatingCorporation/>
    <contributingCorporation/>
    <belongsToBibliography>0</belongsToBibliography>
    <completedDate>2015-02-20</completedDate>
    <publishedDate>--</publishedDate>
    <thesisDateAccepted>--</thesisDateAccepted>
    <title language="eng">Investigation of new Catalysts for PEM Fuel Cells</title>
    <abstract language="eng">Increasing green house emissions amplify global warming concerns worldwide. Fuel cells, based on polymer electrolyte membranes (PEM) are part of the solution to this issue. We aim at developing and testing new catalysts for fuel cells. Platinum catalysts perform best in PEM fuel cells to date but they are very expensive. For fuel cells to be perfectly applicable and economically affordable, an alternative catalyst with similar or even greater efficiency should be developed.&#13;
&#13;
Metal phthalocyanines are known to be good oxygen reduction catalysts and are associated with high electron transfer properties. We investigated Cobalt Phthalocyanine in its pure state mixed with Carbon Black (CoPc:Carbon Black=1:9) untreated and also after a treatment in N2 at several temperatures, up to 1000°C for 30 minutes.&#13;
&#13;
Results of XPS and EDX analyses reveal that the treatment at higher temperatures causes a rearrangement in the chemical states of Co, N and C atoms. Furthermore, results of cycling voltammetry (CV) analysis reveal that CoPc treated in N2 at 800°C exhibited a higher current density, in conclusion, a higher catalytic activity than the untreated CoPc.</abstract>
    <parentTitle language="deu">Verhandlungen der Deutschen Physikalischen Gesellschaft, Reihe 6, Bd. 46</parentTitle>
    <identifier type="issn">0420-0195</identifier>
    <identifier type="url">http://www.dpg-verhandlungen.de/year/2011/conference/dresden/part/o/session/60/contribution/119</identifier>
    <enrichment key="BTU">an der BTU erstellt / created at BTU</enrichment>
    <author>
      <firstName>Roy</firstName>
      <lastName>Mbua</lastName>
    </author>
    <submitter>
      <firstName>Karsten</firstName>
      <lastName>Henkel</lastName>
    </submitter>
    <author>
      <firstName>Klaus</firstName>
      <lastName>Müller</lastName>
    </author>
    <author>
      <firstName>Matthias</firstName>
      <lastName>Richter</lastName>
    </author>
    <author>
      <firstName>Karsten</firstName>
      <lastName>Henkel</lastName>
    </author>
    <author>
      <firstName>Ioanna</firstName>
      <lastName>Paloumpa</lastName>
    </author>
    <author>
      <firstName>Dieter</firstName>
      <lastName>Schmeißer</lastName>
    </author>
    <author>
      <firstName>Ulricke</firstName>
      <lastName>Kramm</lastName>
    </author>
    <collection role="old_institute" number="01005">LS Angewandte Physik / Sensorik</collection>
    <collection role="institutes" number="1503">FG Angewandte Physik und Halbleiterspektroskopie</collection>
  </doc>
  <doc>
    <id>14096</id>
    <completedYear/>
    <publishedYear>2015</publishedYear>
    <thesisYearAccepted/>
    <language>deu</language>
    <pageFirst>3</pageFirst>
    <pageLast>8</pageLast>
    <pageNumber/>
    <edition/>
    <issue/>
    <volume/>
    <type>conferenceobject</type>
    <publisherName>BTU Cottbus-Senftenberg</publisherName>
    <publisherPlace>Senftenberg</publisherPlace>
    <creatingCorporation/>
    <contributingCorporation/>
    <belongsToBibliography>0</belongsToBibliography>
    <completedDate>2015-04-16</completedDate>
    <publishedDate>--</publishedDate>
    <thesisDateAccepted>--</thesisDateAccepted>
    <title language="deu">Charakterisierung von TiO2-ALD-Schichten und deren Nutzung für die Passivierung von Si-Photokathoden</title>
    <abstract language="deu">Wir berichten zunächst über den Einfluss der Methode der Atomlagenabscheidung auf die TiO2-Schichteigenschaften. Insbesondere wird der Zusammenhang zwischen Ti3+- sowie Interbandzuständen mit elektrischen Kennlinien und deren Einfluss auf funktionale Schichteigenschaften diskutiert. Anschließend werden Mikrostrukturierung, Grenzflächen-Engineering und konforme Abscheidung einer TiO2-ALD-Schutzschicht effektiv zur Performance-Steigerung von p-Si-Photokathoden angewendet.</abstract>
    <parentTitle language="deu">Tagungsband Photovoltaik-Meeting: Anwendungen-Qualität-Perspektiven, Senftenberg, 15.04.2015</parentTitle>
    <enrichment key="BTU">an der BTU erstellt / created at BTU</enrichment>
    <author>
      <firstName>Karsten</firstName>
      <lastName>Henkel</lastName>
    </author>
    <editor>
      <firstName>B. K.</firstName>
      <lastName>Glück</lastName>
    </editor>
    <submitter>
      <firstName>Karsten</firstName>
      <lastName>Henkel</lastName>
    </submitter>
    <author>
      <firstName>Chittaranjan</firstName>
      <lastName>Das</lastName>
    </author>
    <editor>
      <firstName>S.</firstName>
      <lastName>Schmidt</lastName>
    </editor>
    <author>
      <firstName>Małgorzata</firstName>
      <lastName>Sowinska</lastName>
    </author>
    <editor>
      <firstName>E.</firstName>
      <lastName>Stein</lastName>
    </editor>
    <author>
      <firstName>Massimo</firstName>
      <lastName>Tallarida</lastName>
    </author>
    <editor>
      <firstName>Jörg-Uwe</firstName>
      <lastName>Raschke</lastName>
    </editor>
    <author>
      <firstName>Dieter</firstName>
      <lastName>Schmeißer</lastName>
    </author>
    <editor>
      <firstName>H.</firstName>
      <lastName>Richter</lastName>
    </editor>
    <author>
      <firstName>Hassan</firstName>
      <lastName>Gargouri</lastName>
    </author>
    <author>
      <firstName>Irina</firstName>
      <lastName>Kärkkänen</lastName>
    </author>
    <author>
      <firstName>Jessica</firstName>
      <lastName>Schneidewind</lastName>
    </author>
    <author>
      <firstName>Bernd</firstName>
      <lastName>Gruska</lastName>
    </author>
    <author>
      <firstName>Michael</firstName>
      <lastName>Arens</lastName>
    </author>
    <subject>
      <language>deu</language>
      <type>uncontrolled</type>
      <value>TiO2</value>
    </subject>
    <subject>
      <language>deu</language>
      <type>uncontrolled</type>
      <value>Korrosion</value>
    </subject>
    <subject>
      <language>deu</language>
      <type>uncontrolled</type>
      <value>Atomlagenabscheidung</value>
    </subject>
    <subject>
      <language>deu</language>
      <type>uncontrolled</type>
      <value>Silizium</value>
    </subject>
    <subject>
      <language>deu</language>
      <type>uncontrolled</type>
      <value>Photokathoden</value>
    </subject>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>Linear Scan Voltametry</value>
    </subject>
    <subject>
      <language>deu</language>
      <type>uncontrolled</type>
      <value>Photoelektronenspektroskopie</value>
    </subject>
    <collection role="old_institute" number="01005">LS Angewandte Physik / Sensorik</collection>
    <collection role="institutes" number="1503">FG Angewandte Physik und Halbleiterspektroskopie</collection>
  </doc>
  <doc>
    <id>14480</id>
    <completedYear/>
    <publishedYear>2015</publishedYear>
    <thesisYearAccepted/>
    <language>eng</language>
    <pageFirst>16143</pageFirst>
    <pageLast>16147</pageLast>
    <pageNumber/>
    <edition/>
    <issue>7</issue>
    <volume/>
    <type>articler</type>
    <publisherName/>
    <publisherPlace/>
    <creatingCorporation/>
    <contributingCorporation/>
    <belongsToBibliography>0</belongsToBibliography>
    <completedDate>2015-08-06</completedDate>
    <publishedDate>--</publishedDate>
    <thesisDateAccepted>--</thesisDateAccepted>
    <title language="eng">DNA-Assisted β‑phase Nucleation and Alignment of Molecular Dipoles in PVDF Film: A Realization of Self-Poled Bioinspired Flexible Polymer Nanogenerator for Portable Electronic Devices</title>
    <abstract language="eng">A flexible nanogenerator (NG) is fabricated with a poly(vinylidene fluoride) (PVDF)film, where deoxyribonu-cleic acid (DNA) is the agent for the electroactive β-phase&#13;
nucleation. Denatured DNA is co-operating to align the&#13;
molecular−CH2/−CF2 dipoles of PVDF causing piezo- electricity without electrical poling. The NG is capable of harvesting energy from a variety of easily accessible mechanical&#13;
stress such as human touch, machine vibration, football&#13;
juggling, and walking. The NG exhibits high piezoelectric&#13;
energy conversion efficiency facilitating the instant turn-on of several green or blue light-emitting diodes. The generated energy can be used to charge capacitors providing a wide scope&#13;
for the design of self-powered portable devices.</abstract>
    <parentTitle language="eng">ACS Applied Materials &amp; Interfaces</parentTitle>
    <identifier type="doi">10.1021/acsami.5b04161</identifier>
    <identifier type="issn">1944-8244</identifier>
    <identifier type="issn">1944-8252</identifier>
    <enrichment key="BTU">an der BTU erstellt / created at BTU</enrichment>
    <author>
      <firstName>Abiral</firstName>
      <lastName>Tamang</lastName>
    </author>
    <submitter>
      <firstName>Karsten</firstName>
      <lastName>Henkel</lastName>
    </submitter>
    <author>
      <firstName>Sujoy Kumar</firstName>
      <lastName>Ghosh</lastName>
    </author>
    <author>
      <firstName>Samiran</firstName>
      <lastName>Garain</lastName>
    </author>
    <author>
      <firstName>Md. Mehebub</firstName>
      <lastName>Alam</lastName>
    </author>
    <author>
      <firstName>Jörg</firstName>
      <lastName>Haeberle</lastName>
    </author>
    <author>
      <firstName>Karsten</firstName>
      <lastName>Henkel</lastName>
    </author>
    <author>
      <firstName>Dieter</firstName>
      <lastName>Schmeißer</lastName>
    </author>
    <author>
      <firstName>Dipankar</firstName>
      <lastName>Mandal</lastName>
    </author>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>PVDF</value>
    </subject>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>β-phase</value>
    </subject>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>DNA</value>
    </subject>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>self-poling</value>
    </subject>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>piezoelectric flexible nanogenerator</value>
    </subject>
    <collection role="old_institute" number="01005">LS Angewandte Physik / Sensorik</collection>
    <collection role="institutes" number="1503">FG Angewandte Physik und Halbleiterspektroskopie</collection>
  </doc>
  <doc>
    <id>14747</id>
    <completedYear/>
    <publishedYear>2016</publishedYear>
    <thesisYearAccepted/>
    <language>eng</language>
    <pageFirst>01A127-1</pageFirst>
    <pageLast>01A127-9</pageLast>
    <pageNumber/>
    <edition/>
    <issue>34</issue>
    <volume/>
    <type>articler</type>
    <publisherName/>
    <publisherPlace/>
    <creatingCorporation/>
    <contributingCorporation/>
    <belongsToBibliography>0</belongsToBibliography>
    <completedDate>2015-11-24</completedDate>
    <publishedDate>--</publishedDate>
    <thesisDateAccepted>--</thesisDateAccepted>
    <title language="eng">Plasma-enhanced atomic layer deposition of titanium oxynitrides films: A comparative spectroscopic and electrical study</title>
    <abstract language="eng">The process parameters’ impact of the plasma-enhanced atomic layer deposition (PE-ALD) method on the oxygen to nitrogen (O/N) ratio in titanium oxynitride (TiOxNy) films was studied. Titanium(IV)isopropoxide in combination with NH3 plasma and tetrakis(dimethylamino) titanium by applying N2 plasma processes were investigated. Samples were characterized by the in situ spectroscopic ellipsometry, x-ray photoelectron spectroscopy, and electrical characterization (current–voltage: I-V and capacitance–voltage: C-V) methods. The O/N ratio in the TiOxNy&#13;
films is found to be very sensitive for their electric properties such as conductivity, dielectric breakdown, and permittivity. Our results indicate that these PE-ALD film properties can be tuned, via the O/N ratio, by the selection of the process parameters and precursor/coreactant&#13;
combination.</abstract>
    <parentTitle language="eng">Journal of Vacuum Science and Technology A</parentTitle>
    <identifier type="doi">10.1116/1.4936227</identifier>
    <identifier type="issn">0734-2101</identifier>
    <identifier type="issn">1520-8559</identifier>
    <enrichment key="BTU">an der BTU erstellt / created at BTU</enrichment>
    <author>
      <firstName>Małgorzata</firstName>
      <lastName>Sowińska</lastName>
    </author>
    <submitter>
      <firstName>Karsten</firstName>
      <lastName>Henkel</lastName>
    </submitter>
    <author>
      <firstName>Karsten</firstName>
      <lastName>Henkel</lastName>
    </author>
    <author>
      <firstName>Dieter</firstName>
      <lastName>Schmeißer</lastName>
    </author>
    <author>
      <firstName>Irina</firstName>
      <lastName>Kärkkänen</lastName>
    </author>
    <author>
      <firstName>Jessica</firstName>
      <lastName>Schneidewind</lastName>
    </author>
    <author>
      <firstName>Franziska</firstName>
      <lastName>Naumann</lastName>
    </author>
    <author>
      <firstName>Bernd</firstName>
      <lastName>Gruska</lastName>
    </author>
    <author>
      <firstName>Hassan</firstName>
      <lastName>Gargouri</lastName>
    </author>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>plasma enhanced atomic layer deposition</value>
    </subject>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>titanium oxynitride</value>
    </subject>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>X-ray photoelectron spectroscopy</value>
    </subject>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>ellipsometry</value>
    </subject>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>current-voltage</value>
    </subject>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>capacitance-voltage</value>
    </subject>
    <collection role="old_institute" number="01005">LS Angewandte Physik / Sensorik</collection>
    <collection role="institutes" number="1503">FG Angewandte Physik und Halbleiterspektroskopie</collection>
  </doc>
  <doc>
    <id>15406</id>
    <completedYear/>
    <publishedYear>2014</publishedYear>
    <thesisYearAccepted/>
    <language>eng</language>
    <pageFirst/>
    <pageLast/>
    <pageNumber/>
    <edition/>
    <issue/>
    <volume/>
    <type>conferenceobject</type>
    <publisherName>Deutsche Physikalische Gesellschaft</publisherName>
    <publisherPlace>Bad Honnef</publisherPlace>
    <creatingCorporation/>
    <contributingCorporation/>
    <belongsToBibliography>0</belongsToBibliography>
    <completedDate>2016-04-11</completedDate>
    <publishedDate>--</publishedDate>
    <thesisDateAccepted>--</thesisDateAccepted>
    <title language="eng">New opportunities with Plasma enhanced atomic layer deposition (PE-ALD) of oxides</title>
    <abstract language="eng">Thermal Atomic layer deposition (T-ALD) of oxides is obtained by the pulsed alternation of a metal precursor and an oxygen source, typically H2O or O3, and the reactions leading to ALD are thermally activated. With plasma enhanced ALD (PE-ALD), instead, the oxygen source is represented by an oxygen-containing plasma. The higher reactivity of the plasma-generated species extend the capabilities of ALD: improved film quality and increased flexibility in process conditions, such as growth at low temperature, are typical advantages of PE-ALD over T-ALD. We report on results on the preparation of thin (&lt;100 nm) aluminum oxide (Al2O3) films on silicon substrates using T-ALD and PE-ALD in the SENTECH SI ALD LL system. Films were deposited in the temperature range between room temperature (RT) and 200∘C. We characterized the films with spectroscopic ellipsometry (thickness, refractive index, growth rate) over 4" wafers and with X-ray photoelectron spectroscopy. All films resulted in a high degree of homogeneity, independent of the deposition temperature. Investigations with capacitance-voltage and conductance-voltage measurements showed a very low interface states density for the PE-ALD films.</abstract>
    <parentTitle language="eng">Verhandlungen der Deutschen Physikalischen Gesellschaft</parentTitle>
    <identifier type="issn">0420-0195</identifier>
    <identifier type="url">http://www.dpg-verhandlungen.de/year/2014/conference/dresden/part/ds/session/49/contribution/3?lang=en</identifier>
    <enrichment key="UBICOseries">Verhandlungen der Deutschen Physikalischen Gesellschaft : Reihe 6, Band 49</enrichment>
    <enrichment key="BTU">an der BTU erstellt / created at BTU</enrichment>
    <author>
      <firstName>Massimo</firstName>
      <lastName>Tallarida</lastName>
    </author>
    <submitter>
      <firstName>Karsten</firstName>
      <lastName>Henkel</lastName>
    </submitter>
    <author>
      <firstName>Karsten</firstName>
      <lastName>Henkel</lastName>
    </author>
    <author>
      <firstName>Hassan</firstName>
      <lastName>Gargouri</lastName>
    </author>
    <author>
      <firstName>Jörg</firstName>
      <lastName>Haeberle</lastName>
    </author>
    <author>
      <firstName>Bernd</firstName>
      <lastName>Gruska</lastName>
    </author>
    <author>
      <firstName>Matthias</firstName>
      <lastName>Arens</lastName>
    </author>
    <author>
      <firstName>Dieter</firstName>
      <lastName>Schmeißer</lastName>
    </author>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>Atomic layer deposition</value>
    </subject>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>Plasma enhanced atomic layer deposition</value>
    </subject>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>X-ray photoelectron spectroscopy</value>
    </subject>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>spectroscopic ellipsometry</value>
    </subject>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>dielectric properties</value>
    </subject>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>Al2O3</value>
    </subject>
    <collection role="institutes" number="1503">FG Angewandte Physik und Halbleiterspektroskopie</collection>
  </doc>
  <doc>
    <id>15395</id>
    <completedYear/>
    <publishedYear>2015</publishedYear>
    <thesisYearAccepted/>
    <language>eng</language>
    <pageFirst>S. 208</pageFirst>
    <pageLast/>
    <pageNumber/>
    <edition/>
    <issue/>
    <volume/>
    <type>conferenceobject</type>
    <publisherName>Deutsche Physikalische Gesellschaft</publisherName>
    <publisherPlace>Bad Honnef</publisherPlace>
    <creatingCorporation/>
    <contributingCorporation/>
    <belongsToBibliography>0</belongsToBibliography>
    <completedDate>2016-04-11</completedDate>
    <publishedDate>--</publishedDate>
    <thesisDateAccepted>--</thesisDateAccepted>
    <title language="eng">A polymer nanogenerator based on silver nanoparticles doped electrospun P(VDF-HFP) nanofibers</title>
    <abstract language="eng">The rising energy demand within the increasing mobility of human society has driven the development of new alternative power sources for portable devices with ultra-low electric power consumption.&#13;
&#13;
Based on its piezoelectric properties poly-vinylidene fluoride (PVDF) is a good candidate for mechanical energy harvesting for such devices. Moreover the copolymer poly(vinylidene fluoride-hexafluoropropylene) [P(VDF-HFP)] offers better film flexibility and cost-effectiveness than pure PVDF.&#13;
&#13;
We report on a polymer nanogenerator (PNG) based on electrospun P(VDF-HFP) nanofibers doped with silver nanoparticles (Ag-NPs). The electrospun fibers were characterized by FTIR, XPS, SEM and pressure imparting probe. It has been found that the yield of the piezoelectric phase is increased by the addition of Ag-NPs due to an interaction between surface charges of Ag-NPs and the molecular dipoles. Furthermore, defects in the P(VDF-HFP) electrospun fibers are removed. Accordingly, a significant enhancement in the output power of the PNG was found. Similar trends were also observed with Pd-NPs.</abstract>
    <parentTitle language="deu">Verhandlungen der Deutschen Physikalischen Gesellschaft</parentTitle>
    <identifier type="issn">0420-0195</identifier>
    <identifier type="url">http://www.dpg-verhandlungen.de/year/2015/conference/berlin/part/ds/session/36/contribution/34?lang=en</identifier>
    <enrichment key="UBICOseries">Verhandlungen der Deutschen Physikalischen Gesellschaft ; Reihe 6, Band 50</enrichment>
    <enrichment key="BTU">an der BTU erstellt / created at BTU</enrichment>
    <author>
      <firstName>Dipankar</firstName>
      <lastName>Mandal</lastName>
    </author>
    <submitter>
      <firstName>Karsten</firstName>
      <lastName>Henkel</lastName>
    </submitter>
    <author>
      <firstName>Karsten</firstName>
      <lastName>Henkel</lastName>
    </author>
    <author>
      <firstName>Dieter</firstName>
      <lastName>Schmeißer</lastName>
    </author>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>nanogenerator</value>
    </subject>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>PVDF</value>
    </subject>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>nanoparticles</value>
    </subject>
    <collection role="institutes" number="1503">FG Angewandte Physik und Halbleiterspektroskopie</collection>
  </doc>
  <doc>
    <id>16476</id>
    <completedYear/>
    <publishedYear>2016</publishedYear>
    <thesisYearAccepted/>
    <language>eng</language>
    <pageFirst>42</pageFirst>
    <pageLast>47</pageLast>
    <pageNumber/>
    <edition/>
    <issue/>
    <volume>381</volume>
    <type>articler</type>
    <publisherName/>
    <publisherPlace/>
    <creatingCorporation/>
    <contributingCorporation/>
    <belongsToBibliography>0</belongsToBibliography>
    <completedDate>2016-06-07</completedDate>
    <publishedDate>--</publishedDate>
    <thesisDateAccepted>--</thesisDateAccepted>
    <title language="eng">Analysis of nitrogen species in titanium oxynitride ALD films</title>
    <abstract language="eng">Titanium oxynitride films  are prepared by plasma enhanced atomic layer deposition method using two  different precursors and  nitrogen sources.  Synchrotron radiation-based  X-ray photoelectron spectroscopy and X-ray absorption spectroscopy are  used to characterize the  nitrogen species incorporated&#13;
within these films depending  on the deposition parameters. &#13;
It is found that nitrogen  atoms in these films are differently bonded. In  particular, it can be  distinguished between Ti-ON  and Ti-N bonding configurations and molecular  nitrogen species caused  by  precursor fragments.</abstract>
    <parentTitle language="eng">Applied Surface Science</parentTitle>
    <identifier type="doi">10.1016/j.apsusc.2016.02.096</identifier>
    <identifier type="issn">0169-4332</identifier>
    <identifier type="issn">1873-5584</identifier>
    <enrichment key="BTU">an der BTU erstellt / created at BTU</enrichment>
    <author>
      <firstName>Małgorzata</firstName>
      <lastName>Sowinska</lastName>
    </author>
    <submitter>
      <firstName>Karsten</firstName>
      <lastName>Henkel</lastName>
    </submitter>
    <author>
      <firstName>Simone</firstName>
      <lastName>Brizzi</lastName>
    </author>
    <author>
      <firstName>Chittaranjan</firstName>
      <lastName>Das</lastName>
    </author>
    <author>
      <firstName>Irina</firstName>
      <lastName>Kärkkänen</lastName>
    </author>
    <author>
      <firstName>Jessica</firstName>
      <lastName>Schneidewind</lastName>
    </author>
    <author>
      <firstName>Franziska</firstName>
      <lastName>Naumann</lastName>
    </author>
    <author>
      <firstName>Hassan</firstName>
      <lastName>Gargouri</lastName>
    </author>
    <author>
      <firstName>Karsten</firstName>
      <lastName>Henkel</lastName>
    </author>
    <author>
      <firstName>Dieter</firstName>
      <lastName>Schmeißer</lastName>
    </author>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>titanium  oxynitride</value>
    </subject>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>X-ray photoelectron spectroscopy</value>
    </subject>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>X-ray absorption spectroscopy</value>
    </subject>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>ALD process parameters</value>
    </subject>
    <collection role="institutes" number="1503">FG Angewandte Physik und Halbleiterspektroskopie</collection>
  </doc>
  <doc>
    <id>17093</id>
    <completedYear/>
    <publishedYear>2016</publishedYear>
    <thesisYearAccepted/>
    <language>eng</language>
    <pageFirst>2332</pageFirst>
    <pageLast>2336</pageLast>
    <pageNumber/>
    <edition/>
    <issue>17</issue>
    <volume>9</volume>
    <type>articler</type>
    <publisherName/>
    <publisherPlace/>
    <creatingCorporation/>
    <contributingCorporation/>
    <belongsToBibliography>0</belongsToBibliography>
    <completedDate>2016-09-09</completedDate>
    <publishedDate>--</publishedDate>
    <thesisDateAccepted>--</thesisDateAccepted>
    <title language="eng">Engineering of Sub-Nanometer SiOₓ Thickness in Si Photocathodes for Optimized Open Circuit Potential</title>
    <abstract language="eng">Silicon is one of the most promising materials to be used for tandem-cell water-splitting devices. However, the electrochemical instability of bare Si makes it difficult to be used for stable devices. Besides that, the photovoltage loss in Si, caused by several factors (e.g., metal oxide protection layer and/or SiO₂/Si or catalyst/Si interface), limits its use in these devices. In this work, we present that an optimized open circuit potential (OCP) of Si can be obtained by controlling the SiOₓ thickness in sub-nanometer range. It can be done by means of a simple and cost-effective way using the combination of a wet chemical etching and the low temperature atomic layer deposition (ALD) of TiO₂. We have found that a certain thickness of the native SiOₓ is necessary to prevent further oxidation of the Si photocathode during the ALD growth of TiO₂. Moreover, covering the Si photocathode with an ALD TiO₂ layer enhances its stability.</abstract>
    <parentTitle language="eng">ChemSusChem</parentTitle>
    <identifier type="doi">10.1002/cssc.201600777</identifier>
    <identifier type="issn">1864-5631</identifier>
    <identifier type="issn">1864-564X</identifier>
    <enrichment key="BTU">an der BTU erstellt / created at BTU</enrichment>
    <author>
      <firstName>Chittaranjan</firstName>
      <lastName>Das</lastName>
    </author>
    <submitter>
      <firstName>Karsten</firstName>
      <lastName>Henkel</lastName>
    </submitter>
    <author>
      <firstName>Małgorzata</firstName>
      <lastName>Kot</lastName>
    </author>
    <author>
      <firstName>Karsten</firstName>
      <lastName>Henkel</lastName>
    </author>
    <author>
      <firstName>Dieter</firstName>
      <lastName>Schmeißer</lastName>
    </author>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>atomic layer deposition</value>
    </subject>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>open circuit potential</value>
    </subject>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>Si photocathodes</value>
    </subject>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>silica</value>
    </subject>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>stability</value>
    </subject>
    <collection role="institutes" number="1503">FG Angewandte Physik und Halbleiterspektroskopie</collection>
  </doc>
  <doc>
    <id>17043</id>
    <completedYear/>
    <publishedYear>2016</publishedYear>
    <thesisYearAccepted/>
    <language>eng</language>
    <pageFirst>21294</pageFirst>
    <pageLast>21301</pageLast>
    <pageNumber/>
    <edition/>
    <issue>33</issue>
    <volume>8</volume>
    <type>articler</type>
    <publisherName/>
    <publisherPlace/>
    <creatingCorporation/>
    <contributingCorporation/>
    <belongsToBibliography>0</belongsToBibliography>
    <completedDate>2016-08-31</completedDate>
    <publishedDate>--</publishedDate>
    <thesisDateAccepted>--</thesisDateAccepted>
    <title language="eng">Cerium(III) Complex Modified Gold Electrode: An Efficient Electrocatalyst for the Oxygen Evolution Reaction</title>
    <abstract language="eng">Exploring efficient and inexpensive electrocatalysts for the oxidation of water is of great importance for various electrochemical energy storage and conversion technologies. In the present study, a new water-soluble [Ce III(DMF) (HSO4)3] complex was synthesized and characterized by UV−vis, photoluminescence, and high-resolution X-ray photoelectron spectroscopy techniques. Owing to classic 5d →4f transitions, an intense photoluminescence in the UV region was observed from the water-soluble [CeIII(DMF (HSO4)3] complex. A stacking electrode was designed where self-assembled L-cysteine monolayer modified gold was immobilized with the synthesized cerium complex and was characterized by scanning electron microscopy, electrochemical impedance spectroscopy, and cyclic voltam-metry. The resulting electrode, i.e., [CeIII(DMF)(HSO4)3]−L-cysteine-Au stacks shows high electrocatalytic water oxidation behavior at an overpotential of η ≈0.34 V under neutral pH conditions. We also demonstrated a way where the overpotential is possible to decrease upon irradiation of UV light.</abstract>
    <parentTitle language="eng">ACS Applied Materials and Interfaces</parentTitle>
    <identifier type="doi">10.1021/acsami.6b05236</identifier>
    <identifier type="issn">1944-8244</identifier>
    <identifier type="issn">1944-8252</identifier>
    <enrichment key="BTU">an der BTU erstellt / created at BTU</enrichment>
    <author>
      <firstName>Samiran</firstName>
      <lastName>Garain</lastName>
    </author>
    <submitter>
      <firstName>Karsten</firstName>
      <lastName>Henkel</lastName>
    </submitter>
    <author>
      <firstName>Koushik</firstName>
      <lastName>Barman</lastName>
    </author>
    <author>
      <firstName>Tridib Kumar</firstName>
      <lastName>Sinha</lastName>
    </author>
    <author>
      <firstName>Sk</firstName>
      <lastName>Jasimuddin</lastName>
    </author>
    <author>
      <firstName>Jörg</firstName>
      <lastName>Haeberle</lastName>
    </author>
    <author>
      <firstName>Karsten</firstName>
      <lastName>Henkel</lastName>
    </author>
    <author>
      <firstName>Dieter</firstName>
      <lastName>Schmeißer</lastName>
    </author>
    <author>
      <firstName>Dipankar</firstName>
      <lastName>Mandal</lastName>
    </author>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>water oxidation</value>
    </subject>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>electrocatalyst</value>
    </subject>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>photoelectrocatalyst</value>
    </subject>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>photoluminescence</value>
    </subject>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>Ce(III)-complex</value>
    </subject>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>L-cysteine</value>
    </subject>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>gold electrode</value>
    </subject>
    <collection role="institutes" number="1503">FG Angewandte Physik und Halbleiterspektroskopie</collection>
  </doc>
  <doc>
    <id>17117</id>
    <completedYear/>
    <publishedYear>2016</publishedYear>
    <thesisYearAccepted/>
    <language>eng</language>
    <pageFirst>S. 419</pageFirst>
    <pageLast/>
    <pageNumber/>
    <edition/>
    <issue/>
    <volume/>
    <type>conferenceobject</type>
    <publisherName>Deutsche Physikalische Gesellschaft</publisherName>
    <publisherPlace>Bad Honnef</publisherPlace>
    <creatingCorporation/>
    <contributingCorporation/>
    <belongsToBibliography>0</belongsToBibliography>
    <completedDate>2016-09-15</completedDate>
    <publishedDate>--</publishedDate>
    <thesisDateAccepted>--</thesisDateAccepted>
    <title language="eng">ALD growth of Al2O3 on Stepped Surface of HOPG and Ag-HOPG</title>
    <abstract language="eng">Atomic Layer Deposition (ALD) is an excellent deposition technique to grow thin film with high homogeneity coverage on ideal surfaces. Here we are interested in the growth properties on non-ideal (stepped, inert) surfaces. Using STM we studied the growth of Al2O3 by ALD on stepped surface of HOPG and silver covered HOPG (Ag-HOPG). The HOPG sample was cleaved to and then cleaned by N2 in vacuum. We obtain regular steps with terrace widths of 50nm - 500nm. Ag was deposited by thermal deposition on the HOPG. The Al2O3 growth at RT was studies after the first, third, and fifth cycle. Silver evaporation&#13;
leads to step decoration with island of 1nm-7nm. On the terraces we find the formation of 2D domain of Ag chains. The features caused by the individual ALD cycles of Al2O3 depend on the terrace widths of the HOPG substrate. For small terraces (&lt;100nm) we obtain a growth of 2D domains ( 20nm-25nm) on the edge steps and in the middle of the terrace. For large terraces (&gt;100nm) we find agglomeration of the precursors on individual nucleation sites. Here 3D islands are formed with a height of up to 5nm in the fifth ALD cycle.</abstract>
    <parentTitle language="deu">Verhandlungen der Deutschen Physikalischen Gesellschaft</parentTitle>
    <identifier type="url">http://www.dpg-verhandlungen.de/year/2016/conference/regensburg/part/o/session/89/contribution/12?lang=en</identifier>
    <enrichment key="UBICOseries">Verhandlungen der Deutschen Physikalischen Gesellschaft ; Reihe 6, Band 51</enrichment>
    <enrichment key="BTU">an der BTU erstellt / created at BTU</enrichment>
    <author>
      <firstName>Zied</firstName>
      <lastName>Rouissi</lastName>
    </author>
    <submitter>
      <firstName>Karsten</firstName>
      <lastName>Henkel</lastName>
    </submitter>
    <author>
      <firstName>Karsten</firstName>
      <lastName>Henkel</lastName>
    </author>
    <author>
      <firstName>Massimo</firstName>
      <lastName>Tallarida</lastName>
    </author>
    <author>
      <firstName>Dieter</firstName>
      <lastName>Schmeißer</lastName>
    </author>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>atomic layer deposition</value>
    </subject>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>Scanning tunneling microscopy (STM)</value>
    </subject>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>Al2O3</value>
    </subject>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>HOPG</value>
    </subject>
    <collection role="institutes" number="1503">FG Angewandte Physik und Halbleiterspektroskopie</collection>
  </doc>
  <doc>
    <id>17146</id>
    <completedYear/>
    <publishedYear>2005</publishedYear>
    <thesisYearAccepted/>
    <language>eng</language>
    <pageFirst/>
    <pageLast/>
    <pageNumber/>
    <edition/>
    <issue/>
    <volume/>
    <type>conferenceobject</type>
    <publisherName>Deutsche Physikalische Gesellschaft</publisherName>
    <publisherPlace>Bad Honnef</publisherPlace>
    <creatingCorporation/>
    <contributingCorporation/>
    <belongsToBibliography>0</belongsToBibliography>
    <completedDate>2016-09-15</completedDate>
    <publishedDate>--</publishedDate>
    <thesisDateAccepted>--</thesisDateAccepted>
    <title language="eng">Growth and Characterization of 3C-SiC thin films on Si substrates</title>
    <abstract language="eng">This work reports on the growth and characterization of cubic silicon carbide thin films. A cold wall low pressure chemical vapour deposition (LPCVD) system has been used to grow the cubic silicon carbide. The two step method, carbonization and subsequent growth, has been used to grow good quality 3C-SiC thin films. The composition and structure of deposited thin films have been analysed by Fourier Transform Infrared Spectroscopy (FTIR), XPS and X-Ray Diffractometry (XRD). The structural quality of the films has been optimized as a function of substrate temperature during carbonization and growth. X-rays diffraction measurements shows that the grown layers are highly oriented crystalline cubic silicon carbide.</abstract>
    <parentTitle language="deu">Verhandlungen der Deutschen Physikalischen Gesellschaft</parentTitle>
    <identifier type="url">http://www.dpg-verhandlungen.de/year/2005/conference/berlin/part/hl/session/58/contribution/50?lan=en</identifier>
    <enrichment key="UBICOseries">Verhandlungen der Deutschen Physikalischen Gesellschaft ; Reihe 6, Band 40</enrichment>
    <enrichment key="BTU">an der BTU erstellt / created at BTU</enrichment>
    <author>
      <firstName>Rakesh</firstName>
      <lastName>Sohal</lastName>
    </author>
    <submitter>
      <firstName>Karsten</firstName>
      <lastName>Henkel</lastName>
    </submitter>
    <author>
      <firstName>Karsten</firstName>
      <lastName>Henkel</lastName>
    </author>
    <author>
      <firstName>Klaus</firstName>
      <lastName>Müller</lastName>
    </author>
    <author>
      <firstName>Dieter</firstName>
      <lastName>Schmeißer</lastName>
    </author>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>low pressure chemical vapor deposition (LPCVD)</value>
    </subject>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>3C-SiC</value>
    </subject>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>X-ray photoelectron spectroscopy (XPS)</value>
    </subject>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>Fourier Transform Infrared Spectroscopy (FTIR)</value>
    </subject>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>X-Ray diffraction</value>
    </subject>
    <collection role="institutes" number="1503">FG Angewandte Physik und Halbleiterspektroskopie</collection>
  </doc>
  <doc>
    <id>17151</id>
    <completedYear/>
    <publishedYear>2004</publishedYear>
    <thesisYearAccepted/>
    <language>eng</language>
    <pageFirst/>
    <pageLast/>
    <pageNumber/>
    <edition/>
    <issue/>
    <volume/>
    <type>conferenceobject</type>
    <publisherName>Deutsche Physikalische Gesellschaft</publisherName>
    <publisherPlace>Bad Honnef</publisherPlace>
    <creatingCorporation/>
    <contributingCorporation/>
    <belongsToBibliography>0</belongsToBibliography>
    <completedDate>2016-09-16</completedDate>
    <publishedDate>--</publishedDate>
    <thesisDateAccepted>--</thesisDateAccepted>
    <title language="eng">Investigations of 3C-SiC growth on Si (001)</title>
    <abstract language="eng">Carbide was grown on Si (001) - substrates with supply of C2H2. Investigation of the interface Si/SiC (buffer layer) is essential for optimized preparation conditions, leading to a high quality of the growing SiC crystal. In addition to the lattice mismatch of 20 per cent between Si and SiC, which causes defects like dislocations or stacking faults, the chemical homogeneity of this layer is important. XPS was used to characterize the first state of SiC crystal growth on the Si substrate. Carbonizing with C2H2 leads to surface reactions which build up the buffer layer. By using electron spectroscopy, it was possible to characterize the SiC/Si (001) buffer layer, depending on the following reaction parameters: Tsubstrate , PC2H2 , PH2 , the ratio of pressures and the reaction time. The measurements were performed in terms of the content of carbide, oxide and roughness/etching-efficiency (Profilometer) for the reaction parameters above. We found, that the most critical parameter is the temperature of the substrate (Tsubstrate).</abstract>
    <parentTitle language="deu">Verhandlungen der Deutschen Physikalischen Gesellschaft</parentTitle>
    <identifier type="url">http://www.dpg-verhandlungen.de/year/2004/conference/regensburg/part/hl/session/44/contribution/42?lang=de</identifier>
    <enrichment key="UBICOseries">Verhandlungen der Deutschen Physikalischen Gesellschaft ; Reihe 6, Band 39</enrichment>
    <enrichment key="BTU">an der BTU erstellt / created at BTU</enrichment>
    <author>
      <firstName>Mohamed</firstName>
      <lastName>Torche</lastName>
    </author>
    <submitter>
      <firstName>Karsten</firstName>
      <lastName>Henkel</lastName>
    </submitter>
    <author>
      <firstName>Klaus</firstName>
      <lastName>Müller</lastName>
    </author>
    <author>
      <firstName>Karsten</firstName>
      <lastName>Henkel</lastName>
    </author>
    <author>
      <firstName>Grzegorz</firstName>
      <lastName>Lupina</lastName>
    </author>
    <author>
      <firstName>Andrey</firstName>
      <lastName>Goryako</lastName>
    </author>
    <author>
      <firstName>Jürgen</firstName>
      <lastName>Wollweber</lastName>
    </author>
    <author>
      <firstName>Dieter</firstName>
      <lastName>Schmeißer</lastName>
    </author>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>3C-SiC</value>
    </subject>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>chemical vapor deposition (CVD)</value>
    </subject>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>X-ray photoelectron spectroscopy (XPS)</value>
    </subject>
    <collection role="institutes" number="1503">FG Angewandte Physik und Halbleiterspektroskopie</collection>
  </doc>
  <doc>
    <id>17138</id>
    <completedYear/>
    <publishedYear>2005</publishedYear>
    <thesisYearAccepted/>
    <language>eng</language>
    <pageFirst/>
    <pageLast/>
    <pageNumber/>
    <edition/>
    <issue/>
    <volume/>
    <type>conferenceobject</type>
    <publisherName>Deutsche Physikalische Gesellschaft</publisherName>
    <publisherPlace>Bad Honnef</publisherPlace>
    <creatingCorporation/>
    <contributingCorporation/>
    <belongsToBibliography>0</belongsToBibliography>
    <completedDate>2016-09-15</completedDate>
    <publishedDate>--</publishedDate>
    <thesisDateAccepted>--</thesisDateAccepted>
    <title language="eng">P(VDF/TrFE) as a ferroelectric dielectric for Organic Field effect Transistors in MFIS structure</title>
    <abstract language="eng">MFIS structures consisting of metal, ferroelectric poly[vinylidene fluoride trifluoroethylene](P[VDF/TrFE]), insulator, semiconductor (Si) are fabricated and the influence of the polarization of the P(VDF/TrFE) on the CV characteristics of these structures is investigated. We find a characteristic ferroelectric hysteresis in the CV curves upon increasing the voltage scan window (e.g.-U...U,U=6...30V, |UP(VDF/TrFE)|≤15V, dP(VDF/TrFE)=300 nm). A writing process with adequate electric fields causes large shifts in the flatband voltage ( Δ UFB&gt;4V for the quoted example before) which are stable over days. We report on our investigations which focus on the switching behavior by varying the parameters like polymer thickness, writing field strength and time, long time stability, reversing voltage and insulating material (SiO2, PMMA (Polymethylmetacrylate)). This material combination is favorable for transfer into our full organic concept of field effect transistors for application as a nondestructive readout memory (NDRO) cell.</abstract>
    <parentTitle language="deu">Verhandlungen der Deutschen Physikalischen Gesellschaft</parentTitle>
    <identifier type="url">http://www.dpg-verhandlungen.de/year/2005/conference/berlin/part/syoo/session/6/contribution/39?lan=en</identifier>
    <enrichment key="UBICOseries">Verhandlungen der Deutschen Physikalischen Gesellschaft ; Reihe 6, Band 40</enrichment>
    <enrichment key="BTU">an der BTU erstellt / created at BTU</enrichment>
    <author>
      <firstName>Karsten</firstName>
      <lastName>Henkel</lastName>
    </author>
    <submitter>
      <firstName>Karsten</firstName>
      <lastName>Henkel</lastName>
    </submitter>
    <author>
      <firstName>Ioanna</firstName>
      <lastName>Paloumpa</lastName>
    </author>
    <author>
      <firstName>Klaus</firstName>
      <lastName>Müller</lastName>
    </author>
    <author>
      <firstName>Dieter</firstName>
      <lastName>Schmeißer</lastName>
    </author>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>P(VDF/TrFE)</value>
    </subject>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>Organic ferroelectric field effect transistor</value>
    </subject>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>capacitance voltage measurements</value>
    </subject>
    <collection role="institutes" number="1503">FG Angewandte Physik und Halbleiterspektroskopie</collection>
  </doc>
  <doc>
    <id>17140</id>
    <completedYear/>
    <publishedYear>2005</publishedYear>
    <thesisYearAccepted/>
    <language>eng</language>
    <pageFirst/>
    <pageLast/>
    <pageNumber/>
    <edition/>
    <issue/>
    <volume/>
    <type>conferenceobject</type>
    <publisherName>Deutsche Physikalische Gesellschaft</publisherName>
    <publisherPlace>Bad Honnef</publisherPlace>
    <creatingCorporation/>
    <contributingCorporation/>
    <belongsToBibliography>0</belongsToBibliography>
    <completedDate>2016-09-15</completedDate>
    <publishedDate>--</publishedDate>
    <thesisDateAccepted>--</thesisDateAccepted>
    <title language="eng">Organic Field Effect Transistors with polymer high-k dielectric insulator</title>
    <abstract language="eng">Organic field effect transistors consisting of the copolymer poly(vinylidene fluoridetrifluoroethylene) (P(VDF-TrFE)) and P3HT (poly(3-hexlythiophene)) as active layer have been fabricated. The influence of P(VDF-TrFE) on the transconductance of organic field effect transistors was investigated and enhanced gate effects are observed compared to similar transistors with PMMA (Polymethylmetacrylate) as gate dielectric. Due to the high dielectric constant of P(VDF-TrFE) (DK=12) an operation voltage smaller than for a conventional organic dielectric like PMMA (DK=3.3) was observed. The thickness of the spincoated dielectric layers is in the range of 2microns and in consequence, no significant hysteresis was found, a prerequisite for transistor operation.</abstract>
    <parentTitle language="deu">Verhandlungen der Deutschen Physikalischen Gesellschaft</parentTitle>
    <identifier type="url">http://www.dpg-verhandlungen.de/year/2005/conference/berlin/part/syoo/session/6/contribution/30?lan=en</identifier>
    <enrichment key="UBICOseries">Verhandlungen der Deutschen Physikalischen Gesellschaft ; Reihe 6, Band 40</enrichment>
    <enrichment key="BTU">an der BTU erstellt / created at BTU</enrichment>
    <author>
      <firstName>Klaus</firstName>
      <lastName>Müller</lastName>
    </author>
    <submitter>
      <firstName>Karsten</firstName>
      <lastName>Henkel</lastName>
    </submitter>
    <author>
      <firstName>Ioanna</firstName>
      <lastName>Paloumpa</lastName>
    </author>
    <author>
      <firstName>Karsten</firstName>
      <lastName>Henkel</lastName>
    </author>
    <author>
      <firstName>Dieter</firstName>
      <lastName>Schmeißer</lastName>
    </author>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>organic field effect transistor</value>
    </subject>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>P(VDF/TrFE)</value>
    </subject>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>high-k organic</value>
    </subject>
    <collection role="institutes" number="1503">FG Angewandte Physik und Halbleiterspektroskopie</collection>
  </doc>
  <doc>
    <id>17544</id>
    <completedYear/>
    <publishedYear>2016</publishedYear>
    <thesisYearAccepted/>
    <language>eng</language>
    <pageFirst>621</pageFirst>
    <pageLast>629</pageLast>
    <pageNumber/>
    <edition/>
    <issue>30</issue>
    <volume>2016</volume>
    <type>articler</type>
    <publisherName/>
    <publisherPlace/>
    <creatingCorporation/>
    <contributingCorporation/>
    <belongsToBibliography>0</belongsToBibliography>
    <completedDate>2016-11-09</completedDate>
    <publishedDate>--</publishedDate>
    <thesisDateAccepted>--</thesisDateAccepted>
    <title language="eng">Yb3+ Assisted Self-Polarized PVDF Based Ferroelectretic Nanogenerator: A Facile Strategy of Highly Efficient Mechanical Energy Harvester Fabrication</title>
    <abstract language="eng">Ytterbium (Yb3+) assisted porous poly(vinylidene fluoride) (PVDF) composite film comprising flexible ferroelectretic nanogenerator (FTNG) is highlighted where traditional poling treatment is completely avoided. The piezoelectric output of FTNG is realized by the co-operative activity of self-polarized -CH2/-CF2 dipoles with porous electret-like structure in the composite film. Owing to extraordinary ferroelectric and dielectric properties, FTNG is acting as a highly efficient mechanical energy harvester. It is capable to capture several forms of abundant mechanical energy arising from humanfinger movements, machine vibrations and sound waves. As a proof of concept, under compressive deformation, FTNG is enable to instantly powers up several consumer electronics and thus provides a promising strategy for achieving self-powered electronic devices.</abstract>
    <parentTitle language="eng">Nano Energy</parentTitle>
    <identifier type="doi">10.1016/j.nanoen.2016.10.042</identifier>
    <identifier type="issn">2211-2855</identifier>
    <enrichment key="BTU">an der BTU erstellt / created at BTU</enrichment>
    <author>
      <firstName>Sujoy Kumar</firstName>
      <lastName>Ghosh</lastName>
    </author>
    <submitter>
      <firstName>Karsten</firstName>
      <lastName>Henkel</lastName>
    </submitter>
    <author>
      <firstName>Anirban</firstName>
      <lastName>Biswas</lastName>
    </author>
    <author>
      <firstName>Shrabanee</firstName>
      <lastName>Sen</lastName>
    </author>
    <author>
      <firstName>Chittaranjan</firstName>
      <lastName>Das</lastName>
    </author>
    <author>
      <firstName>Karsten</firstName>
      <lastName>Henkel</lastName>
    </author>
    <author>
      <firstName>Dieter</firstName>
      <lastName>Schmeißer</lastName>
    </author>
    <author>
      <firstName>Dipankar</firstName>
      <lastName>Mandal</lastName>
    </author>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>PVDF</value>
    </subject>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>Yb 3+</value>
    </subject>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>Porous ferroelectret material</value>
    </subject>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>Self-polarization</value>
    </subject>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>Ferroelectretic nanogenerator</value>
    </subject>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>Mechanical energy harvester</value>
    </subject>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>Self-powered electronics</value>
    </subject>
    <collection role="institutes" number="1503">FG Angewandte Physik und Halbleiterspektroskopie</collection>
  </doc>
  <doc>
    <id>17797</id>
    <completedYear/>
    <publishedYear>2017</publishedYear>
    <thesisYearAccepted/>
    <language>deu</language>
    <pageFirst>01B125-1</pageFirst>
    <pageLast>01B125-18</pageLast>
    <pageNumber/>
    <edition/>
    <issue>1</issue>
    <volume>35</volume>
    <type>articler</type>
    <publisherName/>
    <publisherPlace/>
    <creatingCorporation/>
    <contributingCorporation/>
    <belongsToBibliography>0</belongsToBibliography>
    <completedDate>2016-12-19</completedDate>
    <publishedDate>--</publishedDate>
    <thesisDateAccepted>--</thesisDateAccepted>
    <title language="deu">Localized defect states and charge trapping in atomic layer deposited-Al₂O₃ films</title>
    <abstract language="eng">In this study, the authors compared different Al₂O₃ films grown by atomic layer deposition (ALD) with the same aluminum precursor but on different substrates. The authors employed different process parameters such as thermal-ALD and plasma-enhanced-ALD using different substrate temperatures ranging from 280 °C down to room temperature. They characterized these films by resonant photoelectron spectroscopy and by electrical measurements. They established that generally the ALD-Al₂O₃ films show characteristic features of bulk Al₂O₃. For all films investigated, the authors found intrinsic defect states within the electronic band gap and identified excitonic, polaronic, and charge-transfer defect states. The authors gave an atomistic model to explain these intrinsic defects and found that their relative abundance is subject of the choice of ALD parameters and of the substrate used. They were able to relate the spectroscopic assigned in-gap defect states with the electronic charges as determined in our electrical measurements.</abstract>
    <parentTitle language="eng">Journal of Vacuum Science and Technology, A : Vacuum, Surfaces, and Films</parentTitle>
    <identifier type="doi">10.1116/1.4971991</identifier>
    <identifier type="issn">0734-2101</identifier>
    <identifier type="issn">1520-8559</identifier>
    <enrichment key="BTU">an der BTU erstellt / created at BTU</enrichment>
    <author>
      <firstName>Karsten</firstName>
      <lastName>Henkel</lastName>
    </author>
    <submitter>
      <firstName>Karsten</firstName>
      <lastName>Henkel</lastName>
    </submitter>
    <author>
      <firstName>Małgorzata</firstName>
      <lastName>Kot</lastName>
    </author>
    <author>
      <firstName>Dieter</firstName>
      <lastName>Schmeißer</lastName>
    </author>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>defect states</value>
    </subject>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>resonant photoelectron spectroscopy (resPES)</value>
    </subject>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>Al₂O₃</value>
    </subject>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>atomic layer deposition (ALD)</value>
    </subject>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>excitons</value>
    </subject>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>polarons</value>
    </subject>
    <collection role="institutes" number="1503">FG Angewandte Physik und Halbleiterspektroskopie</collection>
  </doc>
  <doc>
    <id>17861</id>
    <completedYear/>
    <publishedYear>2016</publishedYear>
    <thesisYearAccepted/>
    <language>eng</language>
    <pageFirst>3401</pageFirst>
    <pageLast>3406</pageLast>
    <pageNumber/>
    <edition/>
    <issue>24</issue>
    <volume>9</volume>
    <type>articler</type>
    <publisherName/>
    <publisherPlace/>
    <creatingCorporation/>
    <contributingCorporation/>
    <belongsToBibliography>0</belongsToBibliography>
    <completedDate>2017-01-05</completedDate>
    <publishedDate>--</publishedDate>
    <thesisDateAccepted>--</thesisDateAccepted>
    <title language="eng">Room-Temperature Atomic Layer Deposition of Al₂O₃: Impact on Efficiency, Stability and Surface Properties in Perovskite Solar Cells</title>
    <abstract language="eng">In this work, solar cells with a freshly made CH₃NH₃PbI₃ perovskite film showed a power conversion efficiency (PCE) of 15.4 % whereas the one with 50 days aged perovskite film only 6.1 %. However, when the aged perovskite was covered with a layer of Al₂O₃ deposited by atomic layer deposition (ALD) at room temperature (RT), the PCE value was clearly enhanced. X-ray photoelectron spectroscopy study showed that the ALD precursors are chemically active only at the perovskite surface and passivate it. Moreover, the RT-ALD-Al2O3-covered perovskite films showed enhanced ambient air stability.</abstract>
    <parentTitle language="eng">ChemSusChem</parentTitle>
    <identifier type="doi">10.1002/cssc.201601186</identifier>
    <identifier type="issn">1864-5631</identifier>
    <identifier type="issn">1864-564X</identifier>
    <enrichment key="BTU">an der BTU erstellt / created at BTU</enrichment>
    <author>
      <firstName>Małgorzata</firstName>
      <lastName>Kot</lastName>
    </author>
    <submitter>
      <firstName>Karsten</firstName>
      <lastName>Henkel</lastName>
    </submitter>
    <author>
      <firstName>Chittaranjan</firstName>
      <lastName>Das</lastName>
    </author>
    <author>
      <firstName>Zhiping</firstName>
      <lastName>Wang</lastName>
    </author>
    <author>
      <firstName>Karsten</firstName>
      <lastName>Henkel</lastName>
    </author>
    <author>
      <firstName>Zied</firstName>
      <lastName>Rouissi</lastName>
    </author>
    <author>
      <firstName>Konrad</firstName>
      <lastName>Wojciechowski</lastName>
    </author>
    <author>
      <firstName>Henry J.</firstName>
      <lastName>Snaith</lastName>
    </author>
    <author>
      <firstName>Dieter</firstName>
      <lastName>Schmeißer</lastName>
    </author>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>Al₂O₃</value>
    </subject>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>atomic layer deposition (ALD)</value>
    </subject>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>perovskite</value>
    </subject>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>solar cells</value>
    </subject>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>X-ray photoelectron spectroscopy (XPS)</value>
    </subject>
    <collection role="institutes" number="1503">FG Angewandte Physik und Halbleiterspektroskopie</collection>
  </doc>
  <doc>
    <id>17814</id>
    <completedYear/>
    <publishedYear>2017</publishedYear>
    <thesisYearAccepted/>
    <language>eng</language>
    <pageFirst>01B135-1</pageFirst>
    <pageLast>01B135-8</pageLast>
    <pageNumber/>
    <edition/>
    <issue>1</issue>
    <volume>35</volume>
    <type>articler</type>
    <publisherName/>
    <publisherPlace/>
    <creatingCorporation/>
    <contributingCorporation/>
    <belongsToBibliography>0</belongsToBibliography>
    <completedDate>2016-12-22</completedDate>
    <publishedDate>--</publishedDate>
    <thesisDateAccepted>--</thesisDateAccepted>
    <title language="eng">In-gap states in titanium dioxide and oxynitride atomic layer deposited films</title>
    <abstract language="eng">Valence band (VB) spectra of titanium dioxide (TiO2) and oxynitride (TiOxNy) films prepared by different atomic layer deposition (ALD) processes are compared and related to electrical characterization [current–voltage (JV) and capacitance–voltage (CV)] results. By increasing the nitrogen amount in the TiO2 film, band-gap narrowing is observed. The band-gap decrease is related to the contribution of the nitrogen density of states, which induces defects within the band-gap and thus reduces its optical band-gap. In-gap states are found in the VB spectra at 1 eV below the Fermi energy in all investigated ALD samples, i.e., in TiO2 as well as in TiOxNy films. An exponential correlation between leakage current density and in-gap state intensity is derived&#13;
by the combination of JV measurements and VB spectra, whereas the in-gap states seem to have no influence on hysteresis and fixed oxide charges found in the CV data. It is argued that the in-gap states in TiO2 and TiOxNy have an excitonic or polaronic origin. Both, band-gap narrowing and in-gap state intensity can be tuned by the ALD process selection and the variation of its parameters.</abstract>
    <parentTitle language="eng">Journal of Vacuum Science and Technology: A</parentTitle>
    <identifier type="doi">10.1116/1.4972247</identifier>
    <identifier type="issn">0734-2101</identifier>
    <identifier type="issn">1520-8559</identifier>
    <enrichment key="BTU">an der BTU erstellt / created at BTU</enrichment>
    <author>
      <firstName>Karsten</firstName>
      <lastName>Henkel</lastName>
    </author>
    <submitter>
      <firstName>Karsten</firstName>
      <lastName>Henkel</lastName>
    </submitter>
    <author>
      <firstName>Chittaranjan</firstName>
      <lastName>Das</lastName>
    </author>
    <author>
      <firstName>Małgorzata</firstName>
      <lastName>Kot</lastName>
    </author>
    <author>
      <firstName>Dieter</firstName>
      <lastName>Schmeißer</lastName>
    </author>
    <author>
      <firstName>Franziska</firstName>
      <lastName>Naumann</lastName>
    </author>
    <author>
      <firstName>Irina</firstName>
      <lastName>Kärkkänen</lastName>
    </author>
    <author>
      <firstName>Hassan</firstName>
      <lastName>Gargouri</lastName>
    </author>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>Titanium dioxide (TiO2)</value>
    </subject>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>Titanium oxynitrdie (TiON)</value>
    </subject>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>valence band spectra</value>
    </subject>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>in-gap states</value>
    </subject>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>band-gap narrowing</value>
    </subject>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>electrical characterization</value>
    </subject>
    <collection role="institutes" number="1503">FG Angewandte Physik und Halbleiterspektroskopie</collection>
  </doc>
  <doc>
    <id>17951</id>
    <completedYear/>
    <publishedYear>2013</publishedYear>
    <thesisYearAccepted/>
    <language>eng</language>
    <pageFirst>S. 127</pageFirst>
    <pageLast/>
    <pageNumber/>
    <edition/>
    <issue/>
    <volume/>
    <type>conferenceobject</type>
    <publisherName>Institute of Technology, Haldia, WB, India</publisherName>
    <publisherPlace>Haldia</publisherPlace>
    <creatingCorporation/>
    <contributingCorporation/>
    <belongsToBibliography>0</belongsToBibliography>
    <completedDate>2017-01-20</completedDate>
    <publishedDate>--</publishedDate>
    <thesisDateAccepted>--</thesisDateAccepted>
    <title language="eng">Electro-active β-Phase Formation in Poly(vinylidene fluoride) Films by Hydrated Rare earth Metal Salt</title>
    <abstract language="eng">Polyvinylidene fluoride (PVDF) is a typical fluoro-polymer with complicated polymorphisms due to the semi-crystalline nature. Generally, four crystalline phases, α, β, γ  and δ may exist in PVDF crystals. The nonpolar α- and δ-phase has a monoclinic lattice with trans-gauche conformation (TGTG⁄), which is thermodynamically most stable for PVDF. The polar β phase with all-trans (TTTT) planar zigzag conformation is attractive for its piezo-, pyro-, and ferroelectric properties. The polar β-Phase and also semi-polar γ-phase (TTTGTTTG⁄) have obtained wide device applications such as acoustic transducers, piezoelectric sensors, energy harvesting generators, pyroelectric sensors, non-volatile memories and energy storage capacitors. In this work, we explore the possibility to nucleate β-phase in PVDF hydrated salt composite films by addition of the hydrated Rare earth metal salt, (NH4)4 Ce (SO4)4, 2H2O) for the  piezo- ferro and high dielectric based device applications. It has been found that the water molecules in (NH4)4 Ce (SO4)4, 2H2O could form hydrogen bonds with PVDF during the crystallization process and the hydrogen bonds promoted the electro-active crystalline β- phase in PVDF with all -trans conformations. In addition, the DMF (solvent used for films preparation) can also assist the rare-earth based nanoparticle preparation, as a result the electrostatic interaction of the surface charge of the nanoparticles and molecular dipoles in PVDF can resist the electroactive β- phase in PVDF.</abstract>
    <parentTitle language="eng">Proceeding of the International Conference on Nanotechnology 2013 (ICNT 2013)</parentTitle>
    <identifier type="isbn">978-81-927756-0-9</identifier>
    <enrichment key="BTU">an der BTU erstellt / created at BTU</enrichment>
    <author>
      <firstName>Samiran</firstName>
      <lastName>Garain</lastName>
    </author>
    <submitter>
      <firstName>Karsten</firstName>
      <lastName>Henkel</lastName>
    </submitter>
    <author>
      <firstName>Prakriti</firstName>
      <lastName>Adhikary</lastName>
    </author>
    <author>
      <firstName>Dipankar</firstName>
      <lastName>Mandal</lastName>
    </author>
    <author>
      <firstName>Shrabanee</firstName>
      <lastName>Sen</lastName>
    </author>
    <author>
      <firstName>Karsten</firstName>
      <lastName>Henkel</lastName>
    </author>
    <author>
      <firstName>Dieter</firstName>
      <lastName>Schmeißer</lastName>
    </author>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>PVDF</value>
    </subject>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>β-Phase</value>
    </subject>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>piezoelectric</value>
    </subject>
    <collection role="institutes" number="1503">FG Angewandte Physik und Halbleiterspektroskopie</collection>
  </doc>
  <doc>
    <id>17952</id>
    <completedYear/>
    <publishedYear>2010</publishedYear>
    <thesisYearAccepted/>
    <language>eng</language>
    <pageFirst>S. 932</pageFirst>
    <pageLast/>
    <pageNumber/>
    <edition/>
    <issue/>
    <volume/>
    <type>conferenceobject</type>
    <publisherName>Dechema e.V.</publisherName>
    <publisherPlace>Frankfurt</publisherPlace>
    <creatingCorporation/>
    <contributingCorporation/>
    <belongsToBibliography>0</belongsToBibliography>
    <completedDate>2017-01-20</completedDate>
    <publishedDate>--</publishedDate>
    <thesisDateAccepted>--</thesisDateAccepted>
    <title language="eng">In-situ analysis of moving reaction fronts for the bistable CO oxidation reaction on noble metal catalyst</title>
    <abstract language="eng">Experimental data on the reaction kinetics of catalytic processes are prerequisite for modeling of such reactions and their output. We investigate the CO oxidation on&#13;
some noble metal catalysts, like Iridium(111) and Palladium(111) which is a bistable surface reaction. In a specific range of CO content in the feed gas islands of one or the other adsorbate nucleate and grow, which is recorded with photo electron emission microscopy (PEEM). During these transients the coverage on the surface&#13;
changes from predominantly oxygen covered to predominantly CO covered resp. vice versa. But the resolution of PEEM and especially its unknown and nonlinear dependence of coverage of the two adsorbates (oxygen and CO) and image intensity make it impossible to extract the changes in coverage. On the other hand the reaction diffusion model based on the Langmuir-Hinshelwood-mechanism delivers&#13;
the coverage of oxygen and carbon monoxide. The shapeand wall velocity of those islands has been connected perfectly to each other [CPL 423 (2006) 39], but not the&#13;
absolute coverage and their variation during the reaction. Since the domain wall velocity is small on Iridium(111), this has opened the possibility for a detailed&#13;
analysis of the changing coverage inside this domain wallutilizing synchrotron radiation and photo electron spectroscopy at BESSY II. The coverage profile of&#13;
oxygen and CO inside a moving domain wall was measured for both cases using XPS spectra at O1s, C1s and the valence band during thereaction. Comparison with the reaction-diffusion-model and other catalytic surfaces, like Palladium(111) are done.</abstract>
    <parentTitle language="eng">Extended Abstracts Book of First International Conference on Materials for Energy</parentTitle>
    <identifier type="isbn">978-3-89746-117-8</identifier>
    <enrichment key="BTU">an der BTU erstellt / created at BTU</enrichment>
    <author>
      <firstName>Dieter</firstName>
      <lastName>Schmeißer</lastName>
    </author>
    <submitter>
      <firstName>Karsten</firstName>
      <lastName>Henkel</lastName>
    </submitter>
    <author>
      <firstName>Sebastian</firstName>
      <lastName>Müller</lastName>
    </author>
    <author>
      <firstName>Karsten</firstName>
      <lastName>Henkel</lastName>
    </author>
    <author>
      <firstName>Klaus</firstName>
      <lastName>Müller</lastName>
    </author>
    <author>
      <firstName>Stefan</firstName>
      <lastName>Wehner</lastName>
    </author>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>CO oxidation</value>
    </subject>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>Ir</value>
    </subject>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>Pd</value>
    </subject>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>photo electron emission microscopy (PEEM)</value>
    </subject>
    <collection role="institutes" number="1503">FG Angewandte Physik und Halbleiterspektroskopie</collection>
  </doc>
  <doc>
    <id>19659</id>
    <completedYear/>
    <publishedYear>2017</publishedYear>
    <thesisYearAccepted/>
    <language>eng</language>
    <pageFirst>S. 205</pageFirst>
    <pageLast/>
    <pageNumber/>
    <edition/>
    <issue/>
    <volume/>
    <type>conferenceobject</type>
    <publisherName>Deutsche Physikalische Gesellschaft</publisherName>
    <publisherPlace>Bad Honnef</publisherPlace>
    <creatingCorporation/>
    <contributingCorporation/>
    <belongsToBibliography>0</belongsToBibliography>
    <completedDate>2017-03-23</completedDate>
    <publishedDate>--</publishedDate>
    <thesisDateAccepted>--</thesisDateAccepted>
    <title language="eng">Localized defect states and charge trapping in Al₂O₃ films prepared by atomic layer deposition</title>
    <abstract language="eng">The evaluation of the electronic structure and intrinsic defect mechanisms in Al₂O₃ thin films is essential for their effective use in applications with desired functionality such as surface passivation schemes for solar cells [1]. We present a comparative study of different Al₂O₃ films grown by atomic layer deposition (ALD) [2]. The layers were deposited on different substrates using the same aluminum precursor (TMA, trimethylalumium) and employing different process parameters (thermal-ALD, plasma-enhanced-ALD, substrate temperature). These films were characterized by resonant photoelectron spectroscopy and by electrical measurements (capacitance-voltage). For all films investigated intrinsic defect states within the electronic band gap were observed including excitonic, polaronic, and charge-transfer defect states, where their relative abundance is subject of the choice of ALD parameters and of the used substrate. The spectroscopic assigned in-gap defect states are related with electronic charges as determined in the electrical measurements. [1] G. Dingemans and W.M.M. Kessels, J. Vac. Sci. Technol. A 30, 040802 (2012). [2] K. Henkel, M. Kot, D. Schmeißer, J. Vac. Sci. Technol. A 35, (2017), accepted.</abstract>
    <parentTitle language="deu">Verhandlungen der Deutschen Physikalischen Gesellschaft</parentTitle>
    <identifier type="issn">0420-0195</identifier>
    <identifier type="url">http://www.dpg-verhandlungen.de/year/2017/conference/dresden/part/ds/session/32/contribution/4</identifier>
    <enrichment key="BTU">an der BTU erstellt / created at BTU</enrichment>
    <enrichment key="UBICOseries">Verhandlungen der Deutschen Physikalischen Gesellschaft ; Reihe 6, Band 52,2</enrichment>
    <author>
      <firstName>Karsten</firstName>
      <lastName>Henkel</lastName>
    </author>
    <submitter>
      <firstName>Karsten</firstName>
      <lastName>Henkel</lastName>
    </submitter>
    <author>
      <firstName>Małgorzata</firstName>
      <lastName>Kot</lastName>
    </author>
    <author>
      <firstName>Dieter</firstName>
      <lastName>Schmeißer</lastName>
    </author>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>defect states</value>
    </subject>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>Al₂O₃</value>
    </subject>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>resonant photoelectron spectroscopy</value>
    </subject>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>X-Ray absorption spectroscopy</value>
    </subject>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>capacitance-voltage measurements</value>
    </subject>
    <collection role="institutes" number="1503">FG Angewandte Physik und Halbleiterspektroskopie</collection>
  </doc>
  <doc>
    <id>19839</id>
    <completedYear/>
    <publishedYear>2017</publishedYear>
    <thesisYearAccepted/>
    <language>eng</language>
    <pageFirst>1360</pageFirst>
    <pageLast>1366</pageLast>
    <pageNumber/>
    <edition/>
    <issue>4</issue>
    <volume>2</volume>
    <type>articler</type>
    <publisherName/>
    <publisherPlace/>
    <creatingCorporation/>
    <contributingCorporation/>
    <belongsToBibliography>0</belongsToBibliography>
    <completedDate>2017-04-11</completedDate>
    <publishedDate>--</publishedDate>
    <thesisDateAccepted>--</thesisDateAccepted>
    <title language="eng">Selective Deposition of an ultrathin Pt Layer on a Au-Nanoisland-Modified Si Photocathode for Hydrogen Generation</title>
    <abstract language="eng">Platinum, being the most efficient and stable catalyst, is used in photoelectrochemical (PEC) devices. However, a minimal amount of Pt with maximum catalytic activity is required to be used to minimize the cost of production. In this work, we use an environmentally friendly, ost-effective, and less Pt-consuming method to prepare PEC devices for the hydrogen evolution reaction (HER). The Pt monolayer catalyst is selectively deposited on a Au-nanoisland-supported boron-doped p-type Si (100) photocathode. The PEC device based on the Si photocathode with an ultralow loading of the Pt catalyst exhibits a comparable performance for the HER to that of devices with a thick Pt layer. In addition, we demonstrate that by using a thin TiO2 layer deposited by atomic layer deposition photo-oxidation of the Si photocathode can be blocked resulting in a stable PEC performance.</abstract>
    <parentTitle language="eng">ACS Omega</parentTitle>
    <identifier type="doi">10.1021/acsomega.6b00374</identifier>
    <identifier type="issn">2470-1343</identifier>
    <enrichment key="BTU">an der BTU erstellt / created at BTU</enrichment>
    <author>
      <firstName>Chittaranjan</firstName>
      <lastName>Das</lastName>
    </author>
    <submitter>
      <firstName>Karsten</firstName>
      <lastName>Henkel</lastName>
    </submitter>
    <author>
      <firstName>Małgorzata</firstName>
      <lastName>Kot</lastName>
    </author>
    <author>
      <firstName>Zied</firstName>
      <lastName>Rouissi</lastName>
    </author>
    <author>
      <firstName>Kamil</firstName>
      <lastName>Kędzierski</lastName>
    </author>
    <author>
      <firstName>Karsten</firstName>
      <lastName>Henkel</lastName>
    </author>
    <author>
      <firstName>Dieter</firstName>
      <lastName>Schmeißer</lastName>
    </author>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>water splitting</value>
    </subject>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>hydrogen evolution reaction (HER)</value>
    </subject>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>Si photocathode</value>
    </subject>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>gold nanoislands</value>
    </subject>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>nanostructured platinum</value>
    </subject>
    <collection role="institutes" number="1503">FG Angewandte Physik und Halbleiterspektroskopie</collection>
  </doc>
  <doc>
    <id>20140</id>
    <completedYear/>
    <publishedYear>2017</publishedYear>
    <thesisYearAccepted/>
    <language>eng</language>
    <pageFirst>586</pageFirst>
    <pageLast>593</pageLast>
    <pageNumber/>
    <edition/>
    <issue/>
    <volume>324</volume>
    <type>articler</type>
    <publisherName/>
    <publisherPlace/>
    <creatingCorporation/>
    <contributingCorporation/>
    <belongsToBibliography>0</belongsToBibliography>
    <completedDate>2017-07-17</completedDate>
    <publishedDate>--</publishedDate>
    <thesisDateAccepted>--</thesisDateAccepted>
    <title language="eng">Analysis of titanium species in titanium oxynitride films prepared by plasma enhanced atomic layer deposition</title>
    <abstract language="eng">A comparative study of thin titanium oxynitride (TiOxNy) films prepared by plasma enhanced atomic layer deposition using tetrakis(dimethylamino)titanium (TDMAT) and N2 plasma as well as titanium(IV)isopropoxide and NH3 plasma is reported. The comparison is based on the combination of Ti2p core level and valence band spectroscopy and current-voltage measurements. The TDMAT/N2 process delivers generally higher fractions of TiN and TiON within the Ti2p spectra of the films and stronger photoemissions within the bandgap as resolved in detail by high energy resolution synchrotron-based spectroscopy. In particular, it is shown that higher TiN contributions and in-gap emission intensities correlate strongly with increased leakage currents within the films and might be modified by the process parameters and precursor selection.</abstract>
    <parentTitle language="eng">Surface and Coatings Technology</parentTitle>
    <identifier type="doi">10.1016/j.surfcoat.2016.11.094</identifier>
    <identifier type="issn">0257-8972</identifier>
    <identifier type="issn">1879-3347</identifier>
    <enrichment key="BTU">an der BTU erstellt / created at BTU</enrichment>
    <author>
      <firstName>Małgorzata</firstName>
      <lastName>Kot</lastName>
    </author>
    <submitter>
      <firstName>Karsten</firstName>
      <lastName>Henkel</lastName>
    </submitter>
    <author>
      <firstName>Karsten</firstName>
      <lastName>Henkel</lastName>
    </author>
    <author>
      <firstName>Chittaranjan</firstName>
      <lastName>Das</lastName>
    </author>
    <author>
      <firstName>Simone</firstName>
      <lastName>Brizzi</lastName>
    </author>
    <author>
      <firstName>Irina</firstName>
      <lastName>Kärkkänen</lastName>
    </author>
    <author>
      <firstName>Jessica</firstName>
      <lastName>Schneidewind</lastName>
    </author>
    <author>
      <firstName>Franziska</firstName>
      <lastName>Naumann</lastName>
    </author>
    <author>
      <firstName>Hassan</firstName>
      <lastName>Gargouri</lastName>
    </author>
    <author>
      <firstName>Dieter</firstName>
      <lastName>Schmeißer</lastName>
    </author>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>Titanium oxynitride</value>
    </subject>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>Plasma enhanced atomic layer deposition (PEALD)</value>
    </subject>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>ALD process parameters</value>
    </subject>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>Ti-N contributions</value>
    </subject>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>In-gap defect states</value>
    </subject>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>Leakage current</value>
    </subject>
    <collection role="institutes" number="1503">FG Angewandte Physik und Halbleiterspektroskopie</collection>
  </doc>
  <doc>
    <id>20341</id>
    <completedYear/>
    <publishedYear>2017</publishedYear>
    <thesisYearAccepted/>
    <language>eng</language>
    <pageFirst>1205</pageFirst>
    <pageLast>1213</pageLast>
    <pageNumber/>
    <edition/>
    <issue>12</issue>
    <volume>90</volume>
    <type>articler</type>
    <publisherName/>
    <publisherPlace/>
    <creatingCorporation/>
    <contributingCorporation/>
    <belongsToBibliography>0</belongsToBibliography>
    <completedDate>2017-10-10</completedDate>
    <publishedDate>--</publishedDate>
    <thesisDateAccepted>--</thesisDateAccepted>
    <title language="eng">Comparison of the thermal stability of the α, β and γ phases in poly(vinylidene fluoride) based on in situ thermal Fourier transform infrared spectroscopy</title>
    <abstract language="eng">The electroactive β phase of poly(vinylidenefluoride) (PVDF) is induced due to the aging time of PVDF solutions. The feasibility of the combination of the three crystalline polymorphs (α, β and γ) is demonstrated where&#13;
their relative proportion within the PVDF film can be tailored by the simple monitoring of the preparation conditions. To identify all these phases, Fourier transform infrared (FT-IR) spectroscopy is carried out and it is spotlighted that the vibrational bands at 510 and 841 cm-1 are not sufficient to state the formation of the β phase. The main aim of this work is devoted to develop a better understanding on the thermal stability of these several phases of PVDF, which has a longstanding ambiguity&#13;
persisting in this area. It has been found that the in situ thermal FT-IR spectroscopy is one of the best alternatives to understand this important&#13;
issue. It is ascertained that the β phase is the least thermally stable phase&#13;
among α, β and γ phases, whereas the γ phase is the most thermally stable phase.</abstract>
    <parentTitle language="eng">Phase Transitions</parentTitle>
    <identifier type="doi">10.1080/01411594.2017.1337902</identifier>
    <identifier type="issn">0141-1594</identifier>
    <identifier type="issn">1029-0338</identifier>
    <enrichment key="BTU">an der BTU erstellt / created at BTU</enrichment>
    <author>
      <firstName>Anirban</firstName>
      <lastName>Biswas</lastName>
    </author>
    <submitter>
      <firstName>Karsten</firstName>
      <lastName>Henkel</lastName>
    </submitter>
    <author>
      <firstName>Karsten</firstName>
      <lastName>Henkel</lastName>
    </author>
    <author>
      <firstName>Dieter</firstName>
      <lastName>Schmeißer</lastName>
    </author>
    <author>
      <firstName>Dipankar</firstName>
      <lastName>Mandal</lastName>
    </author>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>PVDF</value>
    </subject>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>thermal stability</value>
    </subject>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>β-phase</value>
    </subject>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>infrared spectroscopy</value>
    </subject>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>in situ thermal FT-IR study</value>
    </subject>
    <collection role="institutes" number="1503">FG Angewandte Physik und Halbleiterspektroskopie</collection>
  </doc>
  <doc>
    <id>20403</id>
    <completedYear/>
    <publishedYear>2017</publishedYear>
    <thesisYearAccepted/>
    <language>eng</language>
    <pageFirst>49</pageFirst>
    <pageLast>52</pageLast>
    <pageNumber/>
    <edition/>
    <issue/>
    <volume>411</volume>
    <type>articler</type>
    <publisherName/>
    <publisherPlace/>
    <creatingCorporation/>
    <contributingCorporation/>
    <belongsToBibliography>0</belongsToBibliography>
    <completedDate>2017-11-01</completedDate>
    <publishedDate>--</publishedDate>
    <thesisDateAccepted>--</thesisDateAccepted>
    <title language="eng">Room temperature atomic layer deposited Al₂O₃ on CH₃NH₃PbI₃ characterized by synchrotron-based X-ray photoelectron spectroscopy</title>
    <abstract language="eng">An ultrathin Al₂O₃ film deposited on methylammonium lead triiodide (CH₃NH₃PbI₃) perovskite has the capability to suppress the carrier recombination process and improve the perovskite solar cells efficiency&#13;
and stability. However, annealing at temperatures higher than 85°C degrades the CH₃NH₃PbI₃ perovskite film. The X-ray photoelectron spectroscopy study performed in this work indicates that it is possible to grow Al₂O₃ by atomic layer deposition on the perovskite at room temperature, however, besides pure Al₂O₃ some OH groups are found and the creation of lead and iodine oxides at the Al₂O₃/CH₃NH₃PbI₃ interface takes place.</abstract>
    <parentTitle language="eng">Nuclear Instruments and Methods in Physics Research B</parentTitle>
    <identifier type="doi">10.1016/j.nimb.2017.01.082</identifier>
    <identifier type="issn">0168-583X</identifier>
    <identifier type="issn">1872-9584</identifier>
    <enrichment key="BTU">an der BTU erstellt / created at BTU</enrichment>
    <author>
      <firstName>Małgorzata</firstName>
      <lastName>Kot</lastName>
    </author>
    <submitter>
      <firstName>Karsten</firstName>
      <lastName>Henkel</lastName>
    </submitter>
    <author>
      <firstName>Chittaranjan</firstName>
      <lastName>Das</lastName>
    </author>
    <author>
      <firstName>Karsten</firstName>
      <lastName>Henkel</lastName>
    </author>
    <author>
      <firstName>Konrad</firstName>
      <lastName>Wojciechowski</lastName>
    </author>
    <author>
      <firstName>Henry J.</firstName>
      <lastName>Snaith</lastName>
    </author>
    <author>
      <firstName>Dieter</firstName>
      <lastName>Schmeißer</lastName>
    </author>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>Synchrotron-based X-ray photoelectron spectroscopy</value>
    </subject>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>Perovskite solar cells</value>
    </subject>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>Atomic layer deposition</value>
    </subject>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>Al₂O₃</value>
    </subject>
    <collection role="institutes" number="1503">FG Angewandte Physik und Halbleiterspektroskopie</collection>
  </doc>
  <doc>
    <id>20422</id>
    <completedYear/>
    <publishedYear>2003</publishedYear>
    <thesisYearAccepted/>
    <language>deu</language>
    <pageFirst>565</pageFirst>
    <pageLast>568</pageLast>
    <pageNumber/>
    <edition/>
    <issue>12</issue>
    <volume>70</volume>
    <type>articler</type>
    <publisherName/>
    <publisherPlace/>
    <creatingCorporation/>
    <contributingCorporation/>
    <belongsToBibliography>0</belongsToBibliography>
    <completedDate>2017-11-03</completedDate>
    <publishedDate>--</publishedDate>
    <thesisDateAccepted>--</thesisDateAccepted>
    <title language="deu">Organische Feldeffekttransistoren als Transducer in der Biosensorik</title>
    <title language="eng">Organic Field Effect Transistors as Biosensors</title>
    <abstract language="deu">In diesem Beitrag wird der Einsatz neuartiger Sensortypen für die medizinische Diagnostik beschrieben. Diese Sensoren sollen komplett organisch sein und auf dem Prinzip des Feldeffekttransistors basieren. Als Modellsystem für die Anwendung in der Biosensorik soll die Einsatzmöglichkeit dieser Sensoren in der nicht-invasiven Diagnostik der Helicobacter-pylori-Infektion überprüft werden.</abstract>
    <abstract language="eng">In this contribution we describe the investigation of new types of sensors in medical diagnosis. These sensors are completely organic and are based on the principle of organic field effect transistors. As model system for application in medical diagnosis we test the usability of this sensors for the diagnosis of helicobacter pylori.</abstract>
    <parentTitle language="deu">Technisches Messen</parentTitle>
    <identifier type="doi">10.1524/teme.70.12.565.20261</identifier>
    <identifier type="issn">0171-8096</identifier>
    <enrichment key="BTU">an der BTU erstellt / created at BTU</enrichment>
    <author>
      <firstName>Klaus</firstName>
      <lastName>Müller</lastName>
    </author>
    <submitter>
      <firstName>Karsten</firstName>
      <lastName>Henkel</lastName>
    </submitter>
    <author>
      <firstName>Werner</firstName>
      <lastName>Bär</lastName>
    </author>
    <author>
      <firstName>Karsten</firstName>
      <lastName>Henkel</lastName>
    </author>
    <author>
      <firstName>Agnes</firstName>
      <lastName>Jahnke</lastName>
    </author>
    <author>
      <firstName>Carola</firstName>
      <lastName>Schwiertz</lastName>
    </author>
    <author>
      <firstName>Dieter</firstName>
      <lastName>Schmeißer</lastName>
    </author>
    <subject>
      <language>deu</language>
      <type>uncontrolled</type>
      <value>Feldeffekttransistor</value>
    </subject>
    <subject>
      <language>deu</language>
      <type>uncontrolled</type>
      <value>Biosensorik</value>
    </subject>
    <subject>
      <language>deu</language>
      <type>uncontrolled</type>
      <value>Helicobacter pylori</value>
    </subject>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>Field effect transistors</value>
    </subject>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>biosensors</value>
    </subject>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>helicobacter pylori</value>
    </subject>
    <collection role="institutes" number="1503">FG Angewandte Physik und Halbleiterspektroskopie</collection>
  </doc>
  <doc>
    <id>20892</id>
    <completedYear/>
    <publishedYear>2018</publishedYear>
    <thesisYearAccepted/>
    <language>eng</language>
    <pageFirst/>
    <pageLast/>
    <pageNumber/>
    <edition/>
    <issue>1</issue>
    <volume>36</volume>
    <type>articler</type>
    <publisherName/>
    <publisherPlace/>
    <creatingCorporation/>
    <contributingCorporation/>
    <belongsToBibliography>0</belongsToBibliography>
    <completedDate>2018-01-09</completedDate>
    <publishedDate>--</publishedDate>
    <thesisDateAccepted>--</thesisDateAccepted>
    <title language="eng">Long-term ambient surface oxidation of titanium oxynitride films prepared by plasma-enhanced atomic layer deposition: An XPS study</title>
    <abstract language="eng">The surface oxidation of a titanium oxynitride (TiOxNy) film after long-time storage of 25 month in ambient conditions is investigated. The TiOxNy film is prepared by plasma-enhanced atomic layer deposition using etrakis(dimethylamino)titanium and nitrogen plasma, and the film is characterized by Ar+&#13;
ion sputtering of the film surface in combination with x-ray photoelectron spectroscopy (XPS) as well as by angle-resolved XPS. The total thickness of an oxygen-enriched layer at the surface of the TiOxNy films is found to be about 0.7 nm and it consists of a sequence of a 0.4 nm thick TiON/TiO2 enriched layer followed by a 0.3 nm thick TiO2 enriched layer underneath compared to the bulk composition of the film which shows constant values of 29% TiN, 29% TiO2, and 42% TiON. The results suggest that the TiON enrichment takes place initially at the surface followed by a surface and subsurface oxidation.</abstract>
    <parentTitle language="eng">Journal of Vacuum Science and Technology A</parentTitle>
    <identifier type="doi">10.1116/1.5003356</identifier>
    <identifier type="issn">0734-2101</identifier>
    <identifier type="issn">1520-8559</identifier>
    <enrichment key="BTU">an der BTU erstellt / created at BTU</enrichment>
    <enrichment key="Artikelnummer">01A114</enrichment>
    <author>
      <firstName>Małgorzata</firstName>
      <lastName>Kot</lastName>
    </author>
    <submitter>
      <firstName>Karsten</firstName>
      <lastName>Henkel</lastName>
    </submitter>
    <author>
      <firstName>Justyna</firstName>
      <lastName>Łobaza</lastName>
    </author>
    <author>
      <firstName>Franziska</firstName>
      <lastName>Naumann</lastName>
    </author>
    <author>
      <firstName>Hassan</firstName>
      <lastName>Gargouri</lastName>
    </author>
    <author>
      <firstName>Karsten</firstName>
      <lastName>Henkel</lastName>
    </author>
    <author>
      <firstName>Dieter</firstName>
      <lastName>Schmeißer</lastName>
    </author>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>atomic layer deposition (ALD)</value>
    </subject>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>surface oxidation</value>
    </subject>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>X-Ray photoelectron spectroscopy (XPS)</value>
    </subject>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>titanium oxynitride</value>
    </subject>
    <collection role="institutes" number="1503">FG Angewandte Physik und Halbleiterspektroskopie</collection>
  </doc>
  <doc>
    <id>21358</id>
    <completedYear/>
    <publishedYear>2018</publishedYear>
    <thesisYearAccepted/>
    <language>eng</language>
    <pageFirst>161596-1</pageFirst>
    <pageLast>161596-9</pageLast>
    <pageNumber/>
    <edition/>
    <issue>16</issue>
    <volume>123</volume>
    <type>articler</type>
    <publisherName/>
    <publisherPlace/>
    <creatingCorporation/>
    <contributingCorporation/>
    <belongsToBibliography>0</belongsToBibliography>
    <completedDate>2018-02-19</completedDate>
    <publishedDate>--</publishedDate>
    <thesisDateAccepted>--</thesisDateAccepted>
    <title language="eng">Intrinsic defects and multiple-atom processes in the oxidic semiconductor Ga₂O₃</title>
    <abstract language="eng">We report on the electronic structure of gallium oxide (Ga₂O₃) single crystals as studied by resonant photoelectron spectroscopy (resPES). We identify intrinsic electronic defects that are formed by mixed-atomic valence states. We differentiate three coexisting defect states that differ in their electronic correlation energy and their spatial localization lengths. Their relative abundance is described by a fractional ionicity with covalent and ionic bonding contributions. For Ga₂O₃, our analyses of the resPES data enable us to derive two main aspects: first, experimental access is given to determine the ionicity based on the original concepts of Pauling and Phillips. Second, we report on multi-atomic energy loss processes in the Ga2p core level and X-ray absorption data. The two experimental findings can be explained consistently in the same context of mixed-atomic valence states and intrinsic electronic defects.</abstract>
    <parentTitle language="eng">Journal of Applied Physics</parentTitle>
    <identifier type="doi">10.1063/1.5010740</identifier>
    <identifier type="issn">0021-8979</identifier>
    <identifier type="issn">1089-7550</identifier>
    <enrichment key="BTU">an der BTU erstellt / created at BTU</enrichment>
    <enrichment key="Artikelnummer">ID 161596</enrichment>
    <author>
      <firstName>Dieter</firstName>
      <lastName>Schmeißer</lastName>
    </author>
    <submitter>
      <firstName>Karsten</firstName>
      <lastName>Henkel</lastName>
    </submitter>
    <author>
      <firstName>Karsten</firstName>
      <lastName>Henkel</lastName>
    </author>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>resonat photoelectron spectroscopy (resPES)</value>
    </subject>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>X-Ray absorption</value>
    </subject>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>gallium oxide (Ga₂O₃)</value>
    </subject>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>intrinsic electronic defects</value>
    </subject>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>band scheme</value>
    </subject>
    <collection role="institutes" number="1503">FG Angewandte Physik und Halbleiterspektroskopie</collection>
  </doc>
  <doc>
    <id>21490</id>
    <completedYear/>
    <publishedYear>2018</publishedYear>
    <thesisYearAccepted/>
    <language>eng</language>
    <pageFirst>S. 135</pageFirst>
    <pageLast/>
    <pageNumber/>
    <edition/>
    <issue/>
    <volume/>
    <type>conferenceobject</type>
    <publisherName>Deutsche Physikalische Gesellschaft</publisherName>
    <publisherPlace>Bad Honnef</publisherPlace>
    <creatingCorporation/>
    <contributingCorporation/>
    <belongsToBibliography>0</belongsToBibliography>
    <completedDate>2018-03-14</completedDate>
    <publishedDate>--</publishedDate>
    <thesisDateAccepted>--</thesisDateAccepted>
    <title language="eng">One-Pot Synthesis of Copper Oxide Nanowires and PVDF/CuO Composite Films for Piezoelectric Energy Harvesting Application</title>
    <abstract language="eng">Copper oxide (CuO) is an attractive p-type oxide semiconductor with narrow band gap that has intriguing properties such as non-toxicity, chemical stability, electrocatalytic activity, abundant availability and low production cost. Polymeric materials have attracted great interest owing to their high flexibility, light weight, low cost production and high resistance against corrosion. Poly(vinylidene fluoride) (PVDF) is a commonly used piezoelectric polymer due to its excellent flexibility and piezoelectric properties. In this work, we adopted a one-pot synthesis of CuO nanowires by facile and selective chemical etching process of Cu substrate. XPS, XRD, SEM data ascribed the formation of polycrystalline CuO nanowires over the entire Cu surface. It has been observed that the uniformity, shape and size of the nanowires could be conveniently controlled by etching time and etchant concentration. We have also prepared piezoelectric nanogenerator based on the flexible PVDF/CuO composite film, where the traditional electrical poling treatment was avoided. In addition, dielectric properties have been studied to demonstrate the role of interfacial polarization.</abstract>
    <parentTitle language="deu">Verhandlungen der Deutschen Physikalischen Gesellschaft, Reihe 6, Band 53,3</parentTitle>
    <identifier type="issn">0420-0195</identifier>
    <identifier type="url">https://www.dpg-verhandlungen.de/year/2018/conference/berlin/part/cpp/session/20/contribution/21</identifier>
    <enrichment key="BTU">an der BTU erstellt / created at BTU</enrichment>
    <author>
      <firstName>Samiran</firstName>
      <lastName>Garain</lastName>
    </author>
    <submitter>
      <firstName>Karsten</firstName>
      <lastName>Henkel</lastName>
    </submitter>
    <author>
      <firstName>Karsten</firstName>
      <lastName>Henkel</lastName>
    </author>
    <author>
      <firstName>Dipankar</firstName>
      <lastName>Mandal</lastName>
    </author>
    <author>
      <firstName>Dieter</firstName>
      <lastName>Schmeißer</lastName>
    </author>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>PVDF</value>
    </subject>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>electroactive phase</value>
    </subject>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>nanogenerators</value>
    </subject>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>energy storage</value>
    </subject>
    <collection role="institutes" number="1503">FG Angewandte Physik und Halbleiterspektroskopie</collection>
  </doc>
  <doc>
    <id>21492</id>
    <completedYear/>
    <publishedYear>2018</publishedYear>
    <thesisYearAccepted/>
    <language>eng</language>
    <pageFirst>S. 170</pageFirst>
    <pageLast/>
    <pageNumber/>
    <edition/>
    <issue/>
    <volume/>
    <type>conferenceobject</type>
    <publisherName>Deutsche Physikalische Gesellschaft</publisherName>
    <publisherPlace>Bad Honnef</publisherPlace>
    <creatingCorporation/>
    <contributingCorporation/>
    <belongsToBibliography>0</belongsToBibliography>
    <completedDate>2018-03-14</completedDate>
    <publishedDate>--</publishedDate>
    <thesisDateAccepted>--</thesisDateAccepted>
    <title language="eng">Aluminum nitride films prepared by plasma atomic layer deposition using different plasma sources</title>
    <abstract language="eng">Aluminum nitride (AlN) thin films are promising for versatile applications in optoelectronics, electronics, piezoelectrics, and acoustics due to their remarkable properties such as wide band gap, high dielectric constant, low electrical conductivity, good piezoelectric coefficient and high ultrasonic velocity. We present a comparative study of AlN films grown by plasma-enhanced atomic layer deposition at 350°C silicon wafers in the SENTECH SI ALD LL system using TMA and NH3 where either a capacitively coupled plasma (CCP) or a direct PTSA (planar triple spiral antenna) source was applied. The films were characterized by ellipsometry, XPS and electrical measurements. The layer properties are discussed concerning the varied ALD process parameters. In general, the process using the direct PTSA source delivered films with higher refractive index and better homogeneity over the wafer achieving also higher growth rates per cycle (GPC) in reduced total cycle durations. Films with refractive index in the range of 2.05 and permittivity around 8 could be realized with a GPC of 1.54 Å/cycle.</abstract>
    <parentTitle language="deu">Verhandlungen der Deutschen Physikalischen Gesellschaft, Reihe 6, Band 53,3</parentTitle>
    <identifier type="issn">0420-0195</identifier>
    <enrichment key="BTU">an der BTU erstellt / created at BTU</enrichment>
    <author>
      <firstName>Małgorzata</firstName>
      <lastName>Kot</lastName>
    </author>
    <submitter>
      <firstName>Karsten</firstName>
      <lastName>Henkel</lastName>
    </submitter>
    <author>
      <firstName>Franziska</firstName>
      <lastName>Naumann</lastName>
    </author>
    <author>
      <firstName>Samiran</firstName>
      <lastName>Garain</lastName>
    </author>
    <author>
      <firstName>Emilia</firstName>
      <lastName>Poźarowska</lastName>
    </author>
    <author>
      <firstName>Hassan</firstName>
      <lastName>Gargouri</lastName>
    </author>
    <author>
      <firstName>Karsten</firstName>
      <lastName>Henkel</lastName>
    </author>
    <author>
      <firstName>Dieter</firstName>
      <lastName>Schmeißer</lastName>
    </author>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>Aluminium nitride</value>
    </subject>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>plasma-enhanced atomic layer deposition (PEALD)</value>
    </subject>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>ellispsometry</value>
    </subject>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>field emission scanning electron microscopy</value>
    </subject>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>atomic force microscopy</value>
    </subject>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>X-ray photoelectron spectroscopy</value>
    </subject>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>electrical characterization</value>
    </subject>
    <collection role="institutes" number="1503">FG Angewandte Physik und Halbleiterspektroskopie</collection>
  </doc>
</export-example>
