<?xml version="1.0" encoding="utf-8"?>
<export-example>
  <doc>
    <id>33919</id>
    <completedYear/>
    <publishedYear/>
    <thesisYearAccepted/>
    <language>eng</language>
    <pageFirst/>
    <pageLast/>
    <pageNumber/>
    <edition/>
    <issue>13</issue>
    <volume>14</volume>
    <type>articlenr</type>
    <publisherName>MDPI</publisherName>
    <publisherPlace/>
    <creatingCorporation/>
    <contributingCorporation/>
    <belongsToBibliography>0</belongsToBibliography>
    <completedDate>--</completedDate>
    <publishedDate>2024-07-02</publishedDate>
    <thesisDateAccepted>--</thesisDateAccepted>
    <title language="eng">p-Type Schottky contacts for graphene adjustable-Barrier phototransistors</title>
    <abstract language="eng">The graphene adjustable-barriers phototransistor is an attractive novel device for potential high speed and high responsivity dual-band photodetection. In this device, graphene is embedded between the semiconductors silicon and germanium. Both n-type and p-type Schottky contacts between graphene and the semiconductors are required for this device. While n-type Schottky contacts are widely investigated, reports about p-type Schottky contacts between graphene and the two involved semiconductors are scarce. In this study, we demonstrate a p-type Schottky contact between graphene and p-germanium. A clear rectification with on–off ratios of close to 10 3 (±5 V) and a distinct photoresponse at telecommunication wavelengths in the infrared are achieved. Further, p-type silicon is transferred to or deposited on graphene, and we also observe rectification and photoresponse in the visible range for some of these p-type Schottky junctions. These results are an important step toward the realization of functional graphene adjustable-barrier phototransistors.</abstract>
    <parentTitle language="eng">Nanomaterials</parentTitle>
    <identifier type="issn">2079-4991</identifier>
    <identifier type="doi">10.3390/nano14131140</identifier>
    <enrichment key="opus.import.date">2024-08-08T14:17:10+00:00</enrichment>
    <enrichment key="opus.source">sword</enrichment>
    <enrichment key="opus.import.user">deepgreen</enrichment>
    <enrichment key="opus.import.file">attachment; filename=deposit.zip</enrichment>
    <enrichment key="opus.import.checksum">6eca4dbfb7fa2b1ad918e90a71c695eb</enrichment>
    <enrichment key="BTU">an der BTU erstellt / created at BTU</enrichment>
    <enrichment key="Publikationsweg">Open Access</enrichment>
    <author>
      <firstName>Carsten</firstName>
      <lastName>Strobel</lastName>
    </author>
    <editor>
      <firstName>Filippo</firstName>
      <lastName>Giannazzo</lastName>
    </editor>
    <author>
      <firstName>Carlos</firstName>
      <lastName>Alvarado Chavarin</lastName>
    </author>
    <editor>
      <firstName>Simonpietro</firstName>
      <lastName>Agnello</lastName>
    </editor>
    <author>
      <firstName>Martin</firstName>
      <lastName>Knaut</lastName>
    </author>
    <editor>
      <firstName>Luca</firstName>
      <lastName>Seravalli</lastName>
    </editor>
    <author>
      <firstName>Matthias</firstName>
      <lastName>Albert</lastName>
    </author>
    <editor>
      <firstName>Federica</firstName>
      <lastName>Bondino</lastName>
    </editor>
    <author>
      <firstName>André</firstName>
      <lastName>Heinzig</lastName>
    </author>
    <author>
      <firstName>Likhith</firstName>
      <lastName>Gummadi</lastName>
    </author>
    <author>
      <firstName>Christian</firstName>
      <lastName>Wenger</lastName>
    </author>
    <author>
      <firstName>Thomas</firstName>
      <lastName>Mikolajick</lastName>
    </author>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>phototransistor</value>
    </subject>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>GABT</value>
    </subject>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>graphene</value>
    </subject>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>p-type</value>
    </subject>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>silicon</value>
    </subject>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>germanium</value>
    </subject>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>high responsivity</value>
    </subject>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>high speed</value>
    </subject>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>dual-band</value>
    </subject>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>photodetection</value>
    </subject>
    <collection role="institutes" number="1521">FG Halbleitermaterialien</collection>
    <collection role="Import" number="import">Import</collection>
  </doc>
</export-example>
