<?xml version="1.0" encoding="utf-8"?>
<export-example>
  <doc>
    <id>6334</id>
    <completedYear/>
    <publishedYear>2011</publishedYear>
    <thesisYearAccepted/>
    <language>eng</language>
    <pageFirst/>
    <pageLast/>
    <pageNumber/>
    <edition/>
    <issue>1</issue>
    <volume>29</volume>
    <type>articler</type>
    <publisherName/>
    <publisherPlace/>
    <creatingCorporation/>
    <contributingCorporation/>
    <belongsToBibliography>0</belongsToBibliography>
    <completedDate>2011-11-16</completedDate>
    <publishedDate>--</publishedDate>
    <thesisDateAccepted>--</thesisDateAccepted>
    <title language="eng">Atomic-scale engineering of future high-k dynamic random access memory dielectrics: The example of partial Hf substitution by Ti in BaHfO3</title>
    <parentTitle language="eng">Journal of Vacuum Science and Technology / B</parentTitle>
    <identifier type="issn">2166-2754</identifier>
    <enrichment key="UBICOIdent">007279</enrichment>
    <author>
      <firstName>Piotr T.</firstName>
      <lastName>Dudek</lastName>
    </author>
    <submitter>
      <firstName>...</firstName>
      <lastName>Administrator</lastName>
    </submitter>
    <author>
      <firstName>Grzegorz</firstName>
      <lastName>Lupina</lastName>
    </author>
    <author>
      <firstName>Grzegorz</firstName>
      <lastName>Kozłowski</lastName>
    </author>
    <author>
      <firstName>Peter</firstName>
      <lastName>Zaumseil</lastName>
    </author>
    <author>
      <firstName>Jakob</firstName>
      <lastName>Bauer</lastName>
    </author>
    <author>
      <firstName>Oksana</firstName>
      <lastName>Fursenko</lastName>
    </author>
    <author>
      <firstName>Jarek Marek</firstName>
      <lastName>Dabrowski</lastName>
    </author>
    <author>
      <firstName>R.</firstName>
      <lastName>Schmidt</lastName>
    </author>
    <author>
      <firstName>Gunther</firstName>
      <lastName>Lippert</lastName>
    </author>
    <author>
      <firstName>Hans-Joachim</firstName>
      <lastName>Müssig</lastName>
    </author>
    <author>
      <firstName>Thomas</firstName>
      <lastName>Schröder</lastName>
    </author>
    <author>
      <firstName>Dieter</firstName>
      <lastName>Schmeißer</lastName>
    </author>
    <author>
      <firstName>Ehrenfried</firstName>
      <lastName>Zschech</lastName>
    </author>
    <collection role="old_institute" number="01005">LS Angewandte Physik / Sensorik</collection>
    <collection role="institutes" number="1503">FG Angewandte Physik und Halbleiterspektroskopie</collection>
  </doc>
  <doc>
    <id>13833</id>
    <completedYear/>
    <publishedYear>2010</publishedYear>
    <thesisYearAccepted/>
    <language>eng</language>
    <pageFirst>S. 232</pageFirst>
    <pageLast/>
    <pageNumber/>
    <edition/>
    <issue/>
    <volume/>
    <type>conferenceobject</type>
    <publisherName>Deutsche Physikalische Gesellschaft</publisherName>
    <publisherPlace>Bad Honnef</publisherPlace>
    <creatingCorporation/>
    <contributingCorporation/>
    <belongsToBibliography>0</belongsToBibliography>
    <completedDate>2015-02-20</completedDate>
    <publishedDate>--</publishedDate>
    <thesisDateAccepted>--</thesisDateAccepted>
    <title language="eng">Band structure and electrical properties of MBE grown HfO2 - based alkaline earth perovskites</title>
    <abstract language="eng">Ultra thin dielectric films (&lt;20 nm) deposited on TiN electrodes are interesting for MIM capacitor application. High capacitance density and dielectric permittivity must be accompanied by extremely low leakage currents (10−8 A/cm2) at bias 0.5 V. To achieve such low leakage currents, high band gap and proper band alignment is required. Occupied electronic states can be probed with standard laboratory photoemission methods. Probing of unoccupied states is more challenging. Synchrotron based PES in combination with XAS forms a powerful method to study the band alignment. ASAM end station located at the U 49/2 PGM 2 beamline of BESSY II (Berlin) offers excellent conditions for performing such measurements. We investigated HfO2 - based alkaline earth perovskite - BaHfO3 with subsequent admixture of TiO2, resulting in formation of BaHf0.5Ti0.5O3 compound. The analysis of data indicates that band gap for HfO2 is similar to BaHfO3 and amounts 5.8 eV; for BaHf0.5Ti0.5O3 it decreases to 3.8 eV. We conclude that the addition of TiO2 to BaHfO3 increases significantly the dielectric permittivity but also impacts the band gap alignment. The conduction band offset shrinks, influencing the leakage current behavior.</abstract>
    <parentTitle language="eng">Verhandlungen der Deutschen Physikalischen Gesellschaft, Reihe 6, Bd. 45</parentTitle>
    <identifier type="issn">0420-0195</identifier>
    <identifier type="url">http://www.dpg-verhandlungen.de/year/2010/conference/regensburg/part/ds/session/24/contribution/4</identifier>
    <enrichment key="BTU">an der BTU erstellt / created at BTU</enrichment>
    <author>
      <firstName>Peter</firstName>
      <lastName>Dudek</lastName>
    </author>
    <submitter>
      <firstName>Karsten</firstName>
      <lastName>Henkel</lastName>
    </submitter>
    <author>
      <firstName>Grzegorz</firstName>
      <lastName>Lupina</lastName>
    </author>
    <author>
      <firstName>Grzegorz</firstName>
      <lastName>Kozłowski</lastName>
    </author>
    <author>
      <firstName>Jarek Marek</firstName>
      <lastName>Dabrowski</lastName>
    </author>
    <author>
      <firstName>Gunther</firstName>
      <lastName>Lippert</lastName>
    </author>
    <author>
      <firstName>Hans-Joachim</firstName>
      <lastName>Müssig</lastName>
    </author>
    <author>
      <firstName>Dieter</firstName>
      <lastName>Schmeißer</lastName>
    </author>
    <author>
      <firstName>Thomas</firstName>
      <lastName>Schroeder</lastName>
    </author>
    <collection role="old_institute" number="01005">LS Angewandte Physik / Sensorik</collection>
    <collection role="institutes" number="1503">FG Angewandte Physik und Halbleiterspektroskopie</collection>
  </doc>
  <doc>
    <id>1984</id>
    <completedYear/>
    <publishedYear>2004</publishedYear>
    <thesisYearAccepted/>
    <language>eng</language>
    <pageFirst>215</pageFirst>
    <pageLast>220</pageLast>
    <pageNumber/>
    <edition/>
    <issue>4-6</issue>
    <volume>7</volume>
    <type>articlenr</type>
    <publisherName/>
    <publisherPlace/>
    <creatingCorporation/>
    <contributingCorporation/>
    <belongsToBibliography>0</belongsToBibliography>
    <completedDate>2005-06-02</completedDate>
    <publishedDate>--</publishedDate>
    <thesisDateAccepted>--</thesisDateAccepted>
    <title language="eng">Solid-state reaction between Pr and SiO2 studied by photoelectron spectroscopy and ab initio calculations</title>
    <abstract language="eng">We report on the structural and electrical properties of Pr-based high-k dielectric films fabricated by solid-state reaction between metallic Pr and SiO2 underlayers. A non-destructive depth profiling using synchrotron radiation excited photoelectron spectroscopy (SR-PES), X-ray photoelectron spectroscopy (XPS) and transmission electron microscopy (TEM) were employed to examine the chemical composition and microstructure. Ab initio calculations were done to gain insight into the physical processes involved. SR-PES results indicate that Pr deposition at room temperature (RT) leads to the formation of a Pr silicide and a Pr oxide, what is in good agreement with the scenario expected from ab initio calculations. As revealed by TEM and electrical measurements, oxidation of the reacted structures, followed by annealing, results in a stacked dielectric composed of a SiO2-based buffer with an enhanced permittivity and a Pr silicate film with a high dielectric constant. The leakage current density of 10-4 A/cm2 was measured for stacks with capacitance equivalent thickness (CET) of 1.5 nm prepared by evaporation of the Pr layer on a 1.8 nm SiO2 film, followed by oxidation in air ambient and annealing in N2 atmosphere. The capacitance-voltage (C-V) curves exhibit a large flatband voltage (VFB) shift indicating the presence of a positive charge in the stack. Switching away from the Al contacts to Au gate electrodes introduces a significant reduction of the VFB by 1.3 eV, what is much more than the change expected from the work function difference between Al and Au (not, vert, similar0.9 eV). This in turn implies that VFB is strongly affected by the gate interface electrode.</abstract>
    <parentTitle language="eng">Materials Science in Semiconductor Processing</parentTitle>
    <identifier type="issn">1369-8001</identifier>
    <enrichment key="UBICOIdent">002406</enrichment>
    <author>
      <firstName>Grzegorz</firstName>
      <lastName>Lupina</lastName>
    </author>
    <submitter>
      <firstName>...</firstName>
      <lastName>Administrator</lastName>
    </submitter>
    <author>
      <firstName>Jarek Marek</firstName>
      <lastName>Dabrowski</lastName>
    </author>
    <author>
      <firstName>Peter</firstName>
      <lastName>Formanek</lastName>
    </author>
    <author>
      <firstName>Dieter</firstName>
      <lastName>Schmeißer</lastName>
    </author>
    <author>
      <firstName>Roland</firstName>
      <lastName>Sorge</lastName>
    </author>
    <author>
      <firstName>Christian</firstName>
      <lastName>Wenger</lastName>
    </author>
    <author>
      <firstName>Peter</firstName>
      <lastName>Zaumseil</lastName>
    </author>
    <author>
      <firstName>Hans-Joachim</firstName>
      <lastName>Müssig</lastName>
    </author>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>High-k dielectrics</value>
    </subject>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>Photoelectron spectroscopy</value>
    </subject>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>Interface reaction</value>
    </subject>
    <collection role="old_institute" number="01005">LS Angewandte Physik / Sensorik</collection>
    <collection role="institutes" number="1503">FG Angewandte Physik und Halbleiterspektroskopie</collection>
  </doc>
  <doc>
    <id>1998</id>
    <completedYear/>
    <publishedYear>2004</publishedYear>
    <thesisYearAccepted/>
    <language>eng</language>
    <pageFirst/>
    <pageLast/>
    <pageNumber>D7.10.</pageNumber>
    <edition/>
    <issue/>
    <volume>811</volume>
    <type>articler</type>
    <publisherName/>
    <publisherPlace/>
    <creatingCorporation/>
    <contributingCorporation/>
    <belongsToBibliography>0</belongsToBibliography>
    <completedDate>2005-06-02</completedDate>
    <publishedDate>--</publishedDate>
    <thesisDateAccepted>--</thesisDateAccepted>
    <title language="eng">Ultrathin Dielectric Films Grown by Solid Phase Reaction of Pr with SiO2</title>
    <parentTitle language="eng">MRS Proceedings</parentTitle>
    <identifier type="issn">1946-4274</identifier>
    <enrichment key="UBICOIdent">002484</enrichment>
    <author>
      <firstName>Hans-Joachim</firstName>
      <lastName>Müssig</lastName>
    </author>
    <submitter>
      <firstName>...</firstName>
      <lastName>Administrator</lastName>
    </submitter>
    <author>
      <firstName>Jarek Marek</firstName>
      <lastName>Dabrowski</lastName>
    </author>
    <author>
      <firstName>Christian</firstName>
      <lastName>Wenger</lastName>
    </author>
    <author>
      <firstName>Grzegorz</firstName>
      <lastName>Lupina</lastName>
    </author>
    <author>
      <firstName>Roland</firstName>
      <lastName>Sorge</lastName>
    </author>
    <author>
      <firstName>Peter</firstName>
      <lastName>Formanek</lastName>
    </author>
    <author>
      <firstName>Peter</firstName>
      <lastName>Zaumseil</lastName>
    </author>
    <author>
      <firstName>Dieter</firstName>
      <lastName>Schmeißer</lastName>
    </author>
    <collection role="old_institute" number="01005">LS Angewandte Physik / Sensorik</collection>
    <collection role="institutes" number="1503">FG Angewandte Physik und Halbleiterspektroskopie</collection>
  </doc>
  <doc>
    <id>1993</id>
    <completedYear/>
    <publishedYear>2004</publishedYear>
    <thesisYearAccepted/>
    <language>eng</language>
    <pageFirst>408</pageFirst>
    <pageLast>409</pageLast>
    <pageNumber/>
    <edition/>
    <issue/>
    <volume/>
    <type>bookpart</type>
    <publisherName>Bessy</publisherName>
    <publisherPlace>Berlin</publisherPlace>
    <creatingCorporation/>
    <contributingCorporation/>
    <belongsToBibliography>0</belongsToBibliography>
    <completedDate>2005-06-02</completedDate>
    <publishedDate>--</publishedDate>
    <thesisDateAccepted>--</thesisDateAccepted>
    <title language="eng">High reactivity of Pr on oxide covered 4H-SiC</title>
    <parentTitle language="eng">Bessy annual report 2003</parentTitle>
    <enrichment key="UBICOIdent">002479</enrichment>
    <author>
      <firstName>Dieter</firstName>
      <lastName>Schmeißer</lastName>
    </author>
    <submitter>
      <firstName>...</firstName>
      <lastName>Administrator</lastName>
    </submitter>
    <author>
      <firstName>Grzegorz</firstName>
      <lastName>Lupina</lastName>
    </author>
    <author>
      <firstName>Hans-Joachim</firstName>
      <lastName>Müssig</lastName>
    </author>
    <collection role="old_institute" number="01005">LS Angewandte Physik / Sensorik</collection>
    <collection role="institutes" number="1503">FG Angewandte Physik und Halbleiterspektroskopie</collection>
  </doc>
  <doc>
    <id>2617</id>
    <completedYear/>
    <publishedYear>2005</publishedYear>
    <thesisYearAccepted/>
    <language>eng</language>
    <pageFirst/>
    <pageLast/>
    <pageNumber>S. 092901</pageNumber>
    <edition/>
    <issue>5</issue>
    <volume>87</volume>
    <type>articler</type>
    <publisherName/>
    <publisherPlace/>
    <creatingCorporation/>
    <contributingCorporation/>
    <belongsToBibliography>0</belongsToBibliography>
    <completedDate>2005-09-13</completedDate>
    <publishedDate>--</publishedDate>
    <thesisDateAccepted>--</thesisDateAccepted>
    <title language="eng">Praseodymium silicate layers with atomically abrupt interface on Si(100)</title>
    <parentTitle language="deu">Applied Physics Letters</parentTitle>
    <identifier type="issn">0003-6951</identifier>
    <enrichment key="UBICOIdent">003144</enrichment>
    <author>
      <firstName>Grzegorz</firstName>
      <lastName>Lupina</lastName>
    </author>
    <submitter>
      <firstName>...</firstName>
      <lastName>Administrator</lastName>
    </submitter>
    <author>
      <firstName>Thomas</firstName>
      <lastName>Schroeder</lastName>
    </author>
    <author>
      <firstName>Jarek Marek</firstName>
      <lastName>Dabrowski</lastName>
    </author>
    <author>
      <firstName>Dieter</firstName>
      <lastName>Schmeißer</lastName>
    </author>
    <author>
      <firstName>Patrick</firstName>
      <lastName>Hoffmann</lastName>
    </author>
    <collection role="old_institute" number="01005">LS Angewandte Physik / Sensorik</collection>
    <collection role="institutes" number="1503">FG Angewandte Physik und Halbleiterspektroskopie</collection>
  </doc>
  <doc>
    <id>3347</id>
    <completedYear/>
    <publishedYear>2006</publishedYear>
    <thesisYearAccepted/>
    <language>eng</language>
    <pageFirst/>
    <pageLast/>
    <pageNumber/>
    <edition/>
    <issue/>
    <volume/>
    <type>doctoralthesis</type>
    <publisherName/>
    <publisherPlace/>
    <creatingCorporation/>
    <contributingCorporation/>
    <belongsToBibliography>0</belongsToBibliography>
    <completedDate>2007-04-26</completedDate>
    <publishedDate>--</publishedDate>
    <thesisDateAccepted>--</thesisDateAccepted>
    <title language="eng">Praseodymium Silicate high-k dielectrics on Si(001)</title>
    <identifier type="urn">urn:nbn:de:kobv:co1-opus-421</identifier>
    <identifier type="url">http://opus4.kobv.de/opus4-btu/frontdoor/index/index/docId/36</identifier>
    <enrichment key="UBICOIdent">004022</enrichment>
    <author>
      <firstName>Grzegorz</firstName>
      <lastName>Lupina</lastName>
    </author>
    <submitter>
      <firstName>...</firstName>
      <lastName>Administrator</lastName>
    </submitter>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>High-k dielectrics</value>
    </subject>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>Praseodymium silicate</value>
    </subject>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>XPS</value>
    </subject>
    <collection role="old_institute" number="01005">LS Angewandte Physik / Sensorik</collection>
    <collection role="institutes" number="1503">FG Angewandte Physik und Halbleiterspektroskopie</collection>
  </doc>
  <doc>
    <id>3598</id>
    <completedYear/>
    <publishedYear>2006</publishedYear>
    <thesisYearAccepted/>
    <language>eng</language>
    <pageFirst/>
    <pageLast/>
    <pageNumber/>
    <edition/>
    <issue/>
    <volume/>
    <type>article</type>
    <publisherName/>
    <publisherPlace/>
    <creatingCorporation/>
    <contributingCorporation/>
    <belongsToBibliography>0</belongsToBibliography>
    <completedDate>2007-06-08</completedDate>
    <publishedDate>--</publishedDate>
    <thesisDateAccepted>--</thesisDateAccepted>
    <title language="eng">Praseodymium Silicate Films on Si(100) for Gate Dielectric Applications: Physical and Electrical Characterization</title>
    <enrichment key="UBICOIdent">004297</enrichment>
    <enrichment key="UBICOquelle">Journal for Applied Physics 99(2006)11, 114109, 0021-8979</enrichment>
    <author>
      <firstName>Grzegorz</firstName>
      <lastName>Lupina</lastName>
    </author>
    <submitter>
      <firstName>...</firstName>
      <lastName>Administrator</lastName>
    </submitter>
    <author>
      <firstName>Thomas</firstName>
      <lastName>Schroeder</lastName>
    </author>
    <author>
      <firstName>Dieter</firstName>
      <lastName>Schmeißer</lastName>
    </author>
    <author>
      <firstName>Jarek Marek</firstName>
      <lastName>Dabrowski</lastName>
    </author>
    <collection role="old_institute" number="01005">LS Angewandte Physik / Sensorik</collection>
    <collection role="institutes" number="1503">FG Angewandte Physik und Halbleiterspektroskopie</collection>
  </doc>
  <doc>
    <id>3671</id>
    <completedYear/>
    <publishedYear>2007</publishedYear>
    <thesisYearAccepted/>
    <language>eng</language>
    <pageFirst>014103</pageFirst>
    <pageLast/>
    <pageNumber/>
    <edition/>
    <issue>1</issue>
    <volume>102</volume>
    <type>articlenr</type>
    <publisherName/>
    <publisherPlace/>
    <creatingCorporation/>
    <contributingCorporation/>
    <belongsToBibliography>0</belongsToBibliography>
    <completedDate>2007-08-22</completedDate>
    <publishedDate>--</publishedDate>
    <thesisDateAccepted>--</thesisDateAccepted>
    <title language="eng">Synchrotron radiation x-ray photoelectron spectroscopy study on the interface chemistry of high-k PrxAl2-xO3 (x=0-2) dielectrics on TiN for dynamic random access memory applications</title>
    <parentTitle language="eng">Journal of Applied Physics</parentTitle>
    <identifier type="issn">0021-8979</identifier>
    <enrichment key="UBICOIdent">004393</enrichment>
    <author>
      <firstName>Thomas</firstName>
      <lastName>Schroeder</lastName>
    </author>
    <submitter>
      <firstName>...</firstName>
      <lastName>Administrator</lastName>
    </submitter>
    <author>
      <firstName>Grzegorz</firstName>
      <lastName>Lupina</lastName>
    </author>
    <author>
      <firstName>Olaf</firstName>
      <lastName>Seifarth</lastName>
    </author>
    <author>
      <firstName>Massimo</firstName>
      <lastName>Tallarida</lastName>
    </author>
    <author>
      <firstName>Dieter</firstName>
      <lastName>Schmeißer</lastName>
    </author>
    <collection role="old_institute" number="01005">LS Angewandte Physik / Sensorik</collection>
    <collection role="institutes" number="1503">FG Angewandte Physik und Halbleiterspektroskopie</collection>
  </doc>
  <doc>
    <id>5170</id>
    <completedYear/>
    <publishedYear>2008</publishedYear>
    <thesisYearAccepted/>
    <language>eng</language>
    <pageFirst/>
    <pageLast/>
    <pageNumber/>
    <edition/>
    <issue/>
    <volume/>
    <type>article</type>
    <publisherName/>
    <publisherPlace/>
    <creatingCorporation/>
    <contributingCorporation/>
    <belongsToBibliography>0</belongsToBibliography>
    <completedDate>2011-02-15</completedDate>
    <publishedDate>--</publishedDate>
    <thesisDateAccepted>--</thesisDateAccepted>
    <title language="eng">Interface chemistry of high-k PrxAl2-xO3 (x=2-0) dielectrics on TiN for dynamic random access memory applications</title>
    <enrichment key="UBICOIdent">006013</enrichment>
    <enrichment key="UBICOquelle">BESSY annual report 2007, S. 197-198</enrichment>
    <author>
      <firstName>Rakesh</firstName>
      <lastName>Sohal</lastName>
    </author>
    <submitter>
      <firstName>...</firstName>
      <lastName>Administrator</lastName>
    </submitter>
    <author>
      <firstName>Grzegorz</firstName>
      <lastName>Lupina</lastName>
    </author>
    <author>
      <firstName>Gunther</firstName>
      <lastName>Lippert</lastName>
    </author>
    <author>
      <firstName>Christian</firstName>
      <lastName>Wenger</lastName>
    </author>
    <author>
      <firstName>Olaf</firstName>
      <lastName>Seifarth</lastName>
    </author>
    <author>
      <firstName>Thomas</firstName>
      <lastName>Schröder</lastName>
    </author>
    <author>
      <firstName>Massimo</firstName>
      <lastName>Tallarida</lastName>
    </author>
    <author>
      <firstName>Dieter</firstName>
      <lastName>Schmeißer</lastName>
    </author>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>high-k</value>
    </subject>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>dielectric</value>
    </subject>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>random</value>
    </subject>
    <collection role="old_institute" number="01005">LS Angewandte Physik / Sensorik</collection>
    <collection role="institutes" number="1503">FG Angewandte Physik und Halbleiterspektroskopie</collection>
  </doc>
  <doc>
    <id>6101</id>
    <completedYear/>
    <publishedYear>2007</publishedYear>
    <thesisYearAccepted/>
    <language>eng</language>
    <pageFirst/>
    <pageLast/>
    <pageNumber/>
    <edition/>
    <issue/>
    <volume/>
    <type>conferenceobject</type>
    <publisherName/>
    <publisherPlace/>
    <creatingCorporation/>
    <contributingCorporation/>
    <belongsToBibliography>0</belongsToBibliography>
    <completedDate>2011-03-02</completedDate>
    <publishedDate>--</publishedDate>
    <thesisDateAccepted>--</thesisDateAccepted>
    <title language="eng">Morphology and Composition of Praseodymium Based High-k Materials and Their Relevance to Dielectric Properties of Thin-Films</title>
    <enrichment key="UBICOIdent">007003</enrichment>
    <enrichment key="UBICOquelle">Transactions of the Electrochemical Society 6(2007)3, S. 773 - 805, 0013-4651</enrichment>
    <author>
      <firstName>Gunther</firstName>
      <lastName>Lippert</lastName>
    </author>
    <submitter>
      <firstName>...</firstName>
      <lastName>Administrator</lastName>
    </submitter>
    <author>
      <firstName>Jarek Marek</firstName>
      <lastName>Dabrowski</lastName>
    </author>
    <author>
      <firstName>Ioan</firstName>
      <lastName>Costina</lastName>
    </author>
    <author>
      <firstName>Grzegorz</firstName>
      <lastName>Lupina</lastName>
    </author>
    <author>
      <firstName>Markus</firstName>
      <lastName>Ratzke</lastName>
    </author>
    <author>
      <firstName>Peter</firstName>
      <lastName>Zaumseil</lastName>
    </author>
    <author>
      <firstName>Hans-Joachim</firstName>
      <lastName>Müssig</lastName>
    </author>
    <collection role="old_institute" number="01013">LS Experimentalphysik / Materialwissenschaften</collection>
    <collection role="institutes" number="1504">FG Experimentalphysik und funktionale Materialien</collection>
  </doc>
  <doc>
    <id>9303</id>
    <completedYear/>
    <publishedYear>2012</publishedYear>
    <thesisYearAccepted/>
    <language>eng</language>
    <pageFirst>035302</pageFirst>
    <pageLast>035311</pageLast>
    <pageNumber/>
    <edition/>
    <issue>3</issue>
    <volume>85</volume>
    <type>articler</type>
    <publisherName/>
    <publisherPlace/>
    <creatingCorporation/>
    <contributingCorporation/>
    <belongsToBibliography>0</belongsToBibliography>
    <completedDate>2013-08-22</completedDate>
    <publishedDate>--</publishedDate>
    <thesisDateAccepted>--</thesisDateAccepted>
    <title language="eng">On the unusual stacking behavior of twin-free, type B oriented CeO2(111) films on hexagonal Pr2O3(0001) / Si(111) systems</title>
    <parentTitle language="eng">Physical Review</parentTitle>
    <identifier type="doi">10.1103/PhysRevB.85.035302</identifier>
    <identifier type="url">http://link.aps.org/doi/10.1103/PhysRevB.85.035302</identifier>
    <identifier type="issn">1098-0121</identifier>
    <enrichment key="BTU">an der BTU erstellt / created at BTU</enrichment>
    <author>
      <firstName>Marvin Hartwig</firstName>
      <lastName>Zöllner</lastName>
    </author>
    <submitter>
      <firstName>Marion</firstName>
      <lastName>Borrmann</lastName>
    </submitter>
    <author>
      <firstName>Jarek Marek</firstName>
      <lastName>Dabrowski</lastName>
    </author>
    <author>
      <firstName>Peter</firstName>
      <lastName>Zaumseil</lastName>
    </author>
    <author>
      <firstName>A.</firstName>
      <lastName>Giussani</lastName>
    </author>
    <author>
      <firstName>Markus Andreas</firstName>
      <lastName>Schubert</lastName>
    </author>
    <author>
      <firstName>Grzegorz</firstName>
      <lastName>Lupina</lastName>
    </author>
    <author>
      <firstName>Henrik</firstName>
      <lastName>Wilkens</lastName>
    </author>
    <author>
      <firstName>Joachim</firstName>
      <lastName>Wollschläger</lastName>
    </author>
    <author>
      <firstName>Marcus</firstName>
      <lastName>Bäumer</lastName>
    </author>
    <author>
      <firstName>M.</firstName>
      <lastName>Reichling</lastName>
    </author>
    <author>
      <firstName>Thomas</firstName>
      <lastName>Schröder</lastName>
    </author>
    <collection role="old_institute" number="01050">LS Halbleitermaterialien</collection>
    <collection role="institutes" number="1521">FG Halbleitermaterialien</collection>
  </doc>
  <doc>
    <id>10359</id>
    <completedYear/>
    <publishedYear>2013</publishedYear>
    <thesisYearAccepted/>
    <language>eng</language>
    <pageFirst>19</pageFirst>
    <pageLast>23</pageLast>
    <pageNumber/>
    <edition/>
    <issue>13</issue>
    <volume>38</volume>
    <type>articler</type>
    <publisherName/>
    <publisherPlace/>
    <creatingCorporation/>
    <contributingCorporation/>
    <belongsToBibliography>0</belongsToBibliography>
    <completedDate>2014-03-04</completedDate>
    <publishedDate>--</publishedDate>
    <thesisDateAccepted>--</thesisDateAccepted>
    <title language="eng">Effect of back-gate on contact resistance and on channel conductance in graphene-based field-effect transistors</title>
    <parentTitle language="eng">Diamond and Related Materials</parentTitle>
    <identifier type="issn">0925-9635</identifier>
    <enrichment key="BTU">an der BTU erstellt / created at BTU</enrichment>
    <author>
      <firstName>Antonio di</firstName>
      <lastName>Bartolomeo</lastName>
    </author>
    <submitter>
      <firstName>Marion</firstName>
      <lastName>Borrmann</lastName>
    </submitter>
    <author>
      <firstName>S.</firstName>
      <lastName>Santandrea</lastName>
    </author>
    <author>
      <firstName>Filippo</firstName>
      <lastName>Giubileo</lastName>
    </author>
    <author>
      <firstName>Francesco</firstName>
      <lastName>Romeo</lastName>
    </author>
    <author>
      <firstName>Mario</firstName>
      <lastName>Petrosino</lastName>
    </author>
    <author>
      <firstName>R.</firstName>
      <lastName>Citro</lastName>
    </author>
    <author>
      <firstName>P.</firstName>
      <lastName>Barbara</lastName>
    </author>
    <author>
      <firstName>Grzegorz</firstName>
      <lastName>Lupina</lastName>
    </author>
    <author>
      <firstName>Thomas</firstName>
      <lastName>Schröder</lastName>
    </author>
    <author>
      <firstName>Alfredo</firstName>
      <lastName>Rubino</lastName>
    </author>
    <collection role="old_institute" number="01050">LS Halbleitermaterialien</collection>
    <collection role="institutes" number="1521">FG Halbleitermaterialien</collection>
  </doc>
  <doc>
    <id>13803</id>
    <completedYear/>
    <publishedYear>2008</publishedYear>
    <thesisYearAccepted/>
    <language>eng</language>
    <pageFirst>S. 196</pageFirst>
    <pageLast/>
    <pageNumber/>
    <edition/>
    <issue/>
    <volume/>
    <type>conferenceobject</type>
    <publisherName>Deutsche Physikalische Gesellschaft</publisherName>
    <publisherPlace>Bad Honnef</publisherPlace>
    <creatingCorporation/>
    <contributingCorporation/>
    <belongsToBibliography>0</belongsToBibliography>
    <completedDate>2015-02-19</completedDate>
    <publishedDate>--</publishedDate>
    <thesisDateAccepted>--</thesisDateAccepted>
    <title language="eng">On the electronic and dielectric characterisation of thin cubic PrO2 layers on Silicon</title>
    <abstract language="eng">For the integration of 100 % Ge onto the Si platform, a buffer oxide approach has been developed recently, using rare earth oxides to tune the lattice constant between the Si and the Ge. Among these buffer oxides, PrO2 is a prospective candidate with high quality crystalline growth on Si, moderated by an interfacial Pr-silicate between. In order to specify electronic properties of thin PrO2 and its interface on Si(111), especially the width of the band gap, we performed synchrotron radiation based XPS, UPS and XAS measurements at the U49/2 PGM 2 beamline at BESSY II and correlate the results with our structural characterisation performed by TEM and XRD. In order to evaluate the dielectric properties of thin PrO2 layers on Si(111), we performed temperature-, time-, voltage-, and layer thickness-dependent leakage current measurements (J-V). Here, we identified relaxation behaviour in the leakage current, successfully addressed to defect like states inside the Pr-silicate interface layer, corroborated by frequency dependent capacitance versus voltage (C-V) measurements.</abstract>
    <parentTitle language="eng">Verhandlungen der Deutschen Physikalischen Gesellschaft, Reihe 6, Bd. 43</parentTitle>
    <identifier type="issn">0420-0195</identifier>
    <identifier type="url">http://www.dpg-verhandlungen.de/year/2008/conference/berlin/part/df/session/12/contribution/6</identifier>
    <enrichment key="BTU">an der BTU erstellt / created at BTU</enrichment>
    <author>
      <firstName>Olaf</firstName>
      <lastName>Seifarth</lastName>
    </author>
    <submitter>
      <firstName>Karsten</firstName>
      <lastName>Henkel</lastName>
    </submitter>
    <author>
      <firstName>Christian</firstName>
      <lastName>Walczyk</lastName>
    </author>
    <author>
      <firstName>Grzegorz</firstName>
      <lastName>Lupina</lastName>
    </author>
    <author>
      <firstName>Jaroslaw</firstName>
      <lastName>Dabrowski</lastName>
    </author>
    <author>
      <firstName>Günter</firstName>
      <lastName>Weidner</lastName>
    </author>
    <author>
      <firstName>Peter</firstName>
      <lastName>Zaumseil</lastName>
    </author>
    <author>
      <firstName>Dieter</firstName>
      <lastName>Schmeißer</lastName>
    </author>
    <author>
      <firstName>Peter</firstName>
      <lastName>Storck</lastName>
    </author>
    <author>
      <firstName>Hans-Joachim</firstName>
      <lastName>Müssig</lastName>
    </author>
    <author>
      <firstName>Thomas</firstName>
      <lastName>Schroeder</lastName>
    </author>
    <collection role="old_institute" number="01005">LS Angewandte Physik / Sensorik</collection>
    <collection role="institutes" number="1503">FG Angewandte Physik und Halbleiterspektroskopie</collection>
  </doc>
  <doc>
    <id>13820</id>
    <completedYear/>
    <publishedYear>2009</publishedYear>
    <thesisYearAccepted/>
    <language>eng</language>
    <pageFirst>S. 136</pageFirst>
    <pageLast/>
    <pageNumber/>
    <edition/>
    <issue/>
    <volume/>
    <type>conferenceobject</type>
    <publisherName>Deutsche Physikalische Gesellschaft</publisherName>
    <publisherPlace>Bad Honnef</publisherPlace>
    <creatingCorporation/>
    <contributingCorporation/>
    <belongsToBibliography>0</belongsToBibliography>
    <completedDate>2015-02-20</completedDate>
    <publishedDate>--</publishedDate>
    <thesisDateAccepted>--</thesisDateAccepted>
    <title language="eng">The electronic band diagram of thin PrO2(111) / Pr-silicate buffers on Si(111) and its relevance to dielectric properties</title>
    <abstract language="eng">Thin dielectric buffers of cubic PrO2(111) on Si(111) are ideally suited to integrate Ge onto Si by moderating the lattice mismatch between the materials. The leakage current across this dielectric buffer is strongly influenced by the electronic band diagram and defects inside the band gap. Therefore, we measured the band offsets, band gaps and defect positions by means of synchrotron radiation based photoemission spectroscopy techniques (XPS and XAS) with special emphasis on the Pr-silicate interface. In a next step we compare the spectroscopic data with information from dielectric studies, based on temperature dependent leakage current studies. We observe a close relation between dielectric properties and the electronic structure.</abstract>
    <parentTitle language="deu">Verhandlungen der Deutschen Physikalischen Gesellschaft, Reihe 6, Bd. 44</parentTitle>
    <identifier type="issn">0420-0195</identifier>
    <identifier type="url">http://www.dpg-verhandlungen.de/year/2009/conference/dresden/part/df/session/6/contribution/5</identifier>
    <enrichment key="BTU">an der BTU erstellt / created at BTU</enrichment>
    <author>
      <firstName>Olaf</firstName>
      <lastName>Seifarth</lastName>
    </author>
    <submitter>
      <firstName>Karsten</firstName>
      <lastName>Henkel</lastName>
    </submitter>
    <author>
      <firstName>Christian</firstName>
      <lastName>Walczyk</lastName>
    </author>
    <author>
      <firstName>Grzegorz</firstName>
      <lastName>Lupina</lastName>
    </author>
    <author>
      <firstName>Peter</firstName>
      <lastName>Zaumseil</lastName>
    </author>
    <author>
      <firstName>Dieter</firstName>
      <lastName>Schmeißer</lastName>
    </author>
    <author>
      <firstName>Hans-Joachim</firstName>
      <lastName>Müssig</lastName>
    </author>
    <author>
      <firstName>Thomas</firstName>
      <lastName>Schroeder</lastName>
    </author>
    <collection role="old_institute" number="01005">LS Angewandte Physik / Sensorik</collection>
    <collection role="institutes" number="1503">FG Angewandte Physik und Halbleiterspektroskopie</collection>
  </doc>
  <doc>
    <id>15721</id>
    <completedYear/>
    <publishedYear>2008</publishedYear>
    <thesisYearAccepted/>
    <language>eng</language>
    <pageFirst>G97</pageFirst>
    <pageLast>G114</pageLast>
    <pageNumber/>
    <edition/>
    <issue>5</issue>
    <volume>155</volume>
    <type>articler</type>
    <publisherName/>
    <publisherPlace/>
    <creatingCorporation/>
    <contributingCorporation/>
    <belongsToBibliography>0</belongsToBibliography>
    <completedDate>2016-04-21</completedDate>
    <publishedDate>--</publishedDate>
    <thesisDateAccepted>--</thesisDateAccepted>
    <title language="eng">Morphology and composition of selected high-k materials and their relevance to dielectric properties of thin films</title>
    <parentTitle language="eng">Journal of the electrochemical society</parentTitle>
    <identifier type="doi">10.1149/1.2875741</identifier>
    <identifier type="issn">1945-7111</identifier>
    <enrichment key="BTU">an der BTU erstellt / created at BTU</enrichment>
    <author>
      <firstName>Gunther</firstName>
      <lastName>Lippert</lastName>
    </author>
    <submitter>
      <firstName>Marion</firstName>
      <lastName>Tülling</lastName>
    </submitter>
    <author>
      <firstName>Jarek Marek</firstName>
      <lastName>Dabrowski</lastName>
    </author>
    <author>
      <firstName>Lars</firstName>
      <lastName>Oberbeck</lastName>
    </author>
    <author>
      <firstName>Uwe</firstName>
      <lastName>Schroeder</lastName>
    </author>
    <author>
      <firstName>Ioan</firstName>
      <lastName>Costina</lastName>
    </author>
    <author>
      <firstName>Grzegorz</firstName>
      <lastName>Lupina</lastName>
    </author>
    <author>
      <firstName>Markus</firstName>
      <lastName>Ratzke</lastName>
    </author>
    <author>
      <firstName>Peter</firstName>
      <lastName>Zaumseil</lastName>
    </author>
    <author>
      <firstName>Hans-Joachim</firstName>
      <lastName>Müssig</lastName>
    </author>
    <collection role="institutes" number="1504">FG Experimentalphysik und funktionale Materialien</collection>
  </doc>
  <doc>
    <id>17151</id>
    <completedYear/>
    <publishedYear>2004</publishedYear>
    <thesisYearAccepted/>
    <language>eng</language>
    <pageFirst/>
    <pageLast/>
    <pageNumber/>
    <edition/>
    <issue/>
    <volume/>
    <type>conferenceobject</type>
    <publisherName>Deutsche Physikalische Gesellschaft</publisherName>
    <publisherPlace>Bad Honnef</publisherPlace>
    <creatingCorporation/>
    <contributingCorporation/>
    <belongsToBibliography>0</belongsToBibliography>
    <completedDate>2016-09-16</completedDate>
    <publishedDate>--</publishedDate>
    <thesisDateAccepted>--</thesisDateAccepted>
    <title language="eng">Investigations of 3C-SiC growth on Si (001)</title>
    <abstract language="eng">Carbide was grown on Si (001) - substrates with supply of C2H2. Investigation of the interface Si/SiC (buffer layer) is essential for optimized preparation conditions, leading to a high quality of the growing SiC crystal. In addition to the lattice mismatch of 20 per cent between Si and SiC, which causes defects like dislocations or stacking faults, the chemical homogeneity of this layer is important. XPS was used to characterize the first state of SiC crystal growth on the Si substrate. Carbonizing with C2H2 leads to surface reactions which build up the buffer layer. By using electron spectroscopy, it was possible to characterize the SiC/Si (001) buffer layer, depending on the following reaction parameters: Tsubstrate , PC2H2 , PH2 , the ratio of pressures and the reaction time. The measurements were performed in terms of the content of carbide, oxide and roughness/etching-efficiency (Profilometer) for the reaction parameters above. We found, that the most critical parameter is the temperature of the substrate (Tsubstrate).</abstract>
    <parentTitle language="deu">Verhandlungen der Deutschen Physikalischen Gesellschaft</parentTitle>
    <identifier type="url">http://www.dpg-verhandlungen.de/year/2004/conference/regensburg/part/hl/session/44/contribution/42?lang=de</identifier>
    <enrichment key="UBICOseries">Verhandlungen der Deutschen Physikalischen Gesellschaft ; Reihe 6, Band 39</enrichment>
    <enrichment key="BTU">an der BTU erstellt / created at BTU</enrichment>
    <author>
      <firstName>Mohamed</firstName>
      <lastName>Torche</lastName>
    </author>
    <submitter>
      <firstName>Karsten</firstName>
      <lastName>Henkel</lastName>
    </submitter>
    <author>
      <firstName>Klaus</firstName>
      <lastName>Müller</lastName>
    </author>
    <author>
      <firstName>Karsten</firstName>
      <lastName>Henkel</lastName>
    </author>
    <author>
      <firstName>Grzegorz</firstName>
      <lastName>Lupina</lastName>
    </author>
    <author>
      <firstName>Andrey</firstName>
      <lastName>Goryako</lastName>
    </author>
    <author>
      <firstName>Jürgen</firstName>
      <lastName>Wollweber</lastName>
    </author>
    <author>
      <firstName>Dieter</firstName>
      <lastName>Schmeißer</lastName>
    </author>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>3C-SiC</value>
    </subject>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>chemical vapor deposition (CVD)</value>
    </subject>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>X-ray photoelectron spectroscopy (XPS)</value>
    </subject>
    <collection role="institutes" number="1503">FG Angewandte Physik und Halbleiterspektroskopie</collection>
  </doc>
  <doc>
    <id>17137</id>
    <completedYear/>
    <publishedYear>2005</publishedYear>
    <thesisYearAccepted/>
    <language>eng</language>
    <pageFirst/>
    <pageLast/>
    <pageNumber/>
    <edition/>
    <issue/>
    <volume/>
    <type>conferenceobject</type>
    <publisherName>Deutsche Physikalische Gesellschaft</publisherName>
    <publisherPlace>Bad Honnef</publisherPlace>
    <creatingCorporation/>
    <contributingCorporation/>
    <belongsToBibliography>0</belongsToBibliography>
    <completedDate>2016-09-15</completedDate>
    <publishedDate>--</publishedDate>
    <thesisDateAccepted>--</thesisDateAccepted>
    <title language="eng">Ti-doping of Pr silicate layers for high-k dielectrics applications</title>
    <abstract language="eng">Near-term downscaling of the metal-oxide-semiconductor field-effect transistors (MOSFETs) requires the replacement of the SiO2 gate oxide with a material having a higher dielectric constant. Recent studies indicate that silicate materials are the most promising candidates; among them are Pr silicates. Applying a combination of x-ray photoelectron spectroscopy (XPS), electrical measurements (C-V), and ab initio calculations, we investigated the effect of thin Ti doping on the structural and electrical properties of the gate stacks composed of a Pr silicate film and a SiO2-based interfacial buffer layer. Metallic Ti was deposited at room temperature after the formation of the Pr silicate dielectric. The resulting layered structures were annealed under ultra-high vacuum (UHV) at various temperatures between 70∘C and 880∘C. XPS indicates that the evaporated layer preserves its metallic character over the whole range of UHV annealing temperatures. Synchrotron radiation XPS at BESSY II shows that large amounts of Ti atoms incorporated into the Pr silicate remain metallic even after air exposure at room temperature. Annealing in nitrogen ambient at 300∘C leads to the oxidation of these atoms so that a mixed Pr:Ti silicate is formed. We show that the so formed dielectrics exhibit an improved equivalent oxide thickness and a reduced density of interface states.</abstract>
    <parentTitle language="deu">Verhandlungen der Deutschen Physikalischen Gesellschaft</parentTitle>
    <identifier type="url">http://www.dpg-verhandlungen.de/year/2005/conference/berlin/part/df/session/6/contribution/5?lan=en</identifier>
    <enrichment key="UBICOseries">Verhandlungen der Deutschen Physikalischen Gesellschaft ; Reihe 6, Band 40</enrichment>
    <enrichment key="BTU">an der BTU erstellt / created at BTU</enrichment>
    <author>
      <firstName>Grzegorz</firstName>
      <lastName>Lupina</lastName>
    </author>
    <submitter>
      <firstName>Karsten</firstName>
      <lastName>Henkel</lastName>
    </submitter>
    <author>
      <firstName>Thomas</firstName>
      <lastName>Schroeder</lastName>
    </author>
    <author>
      <firstName>Jarek Marek</firstName>
      <lastName>Dabrowski</lastName>
    </author>
    <author>
      <firstName>Dieter</firstName>
      <lastName>Schmeißer</lastName>
    </author>
    <author>
      <firstName>Hans-Joachim</firstName>
      <lastName>Müssig</lastName>
    </author>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>high-k</value>
    </subject>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>X-ray photoelectron spectroscopy</value>
    </subject>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>ab inito calculations</value>
    </subject>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>Capacitance-voltage measurements</value>
    </subject>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>Pr silicate</value>
    </subject>
    <collection role="institutes" number="1503">FG Angewandte Physik und Halbleiterspektroskopie</collection>
  </doc>
  <doc>
    <id>18942</id>
    <completedYear/>
    <publishedYear>2016</publishedYear>
    <thesisYearAccepted/>
    <language>eng</language>
    <pageFirst>2017</pageFirst>
    <pageLast>2026</pageLast>
    <pageNumber/>
    <edition/>
    <issue>3</issue>
    <volume>8</volume>
    <type>articler</type>
    <publisherName/>
    <publisherPlace/>
    <creatingCorporation/>
    <contributingCorporation/>
    <belongsToBibliography>0</belongsToBibliography>
    <completedDate>2017-03-03</completedDate>
    <publishedDate>--</publishedDate>
    <thesisDateAccepted>--</thesisDateAccepted>
    <title language="eng">Photodetection in hybrid single layer graphene/fully coherent Ge island nanostructures selectively grown on Si nano-tip patterns</title>
    <parentTitle language="eng">ACS Applied Materials and Interfaces</parentTitle>
    <identifier type="issn">1944-8252</identifier>
    <enrichment key="BTU">an der BTU erstellt / created at BTU</enrichment>
    <author>
      <firstName>Gang</firstName>
      <lastName>Niu</lastName>
    </author>
    <submitter>
      <firstName>Marion</firstName>
      <lastName>Tülling</lastName>
    </submitter>
    <author>
      <firstName>Giovanni</firstName>
      <lastName>Capellini</lastName>
    </author>
    <author>
      <firstName>Grzegorz</firstName>
      <lastName>Lupina</lastName>
    </author>
    <author>
      <firstName>Tore</firstName>
      <lastName>Niermann</lastName>
    </author>
    <author>
      <firstName>Marco</firstName>
      <lastName>Salvalaglio</lastName>
    </author>
    <author>
      <firstName>Anna</firstName>
      <lastName>Marzegalli</lastName>
    </author>
    <author>
      <firstName>Markus Andreas</firstName>
      <lastName>Schubert</lastName>
    </author>
    <author>
      <firstName>Peter</firstName>
      <lastName>Zaumseil</lastName>
    </author>
    <author>
      <firstName>Hans-Michael</firstName>
      <lastName>Krause</lastName>
    </author>
    <author>
      <firstName>Oliver</firstName>
      <lastName>Skibitzki</lastName>
    </author>
    <author>
      <firstName>Michael</firstName>
      <lastName>Lehmann</lastName>
    </author>
    <author>
      <firstName>Francesco</firstName>
      <lastName>Montalenti</lastName>
    </author>
    <author>
      <firstName>Ya-Hong</firstName>
      <lastName>Xie</lastName>
    </author>
    <author>
      <firstName>Thomas</firstName>
      <lastName>Schröder</lastName>
    </author>
    <collection role="institutes" number="1521">FG Halbleitermaterialien</collection>
  </doc>
  <doc>
    <id>18958</id>
    <completedYear/>
    <publishedYear>2016</publishedYear>
    <thesisYearAccepted/>
    <language>eng</language>
    <pageFirst>Art. 31639</pageFirst>
    <pageLast/>
    <pageNumber>10</pageNumber>
    <edition/>
    <issue>6</issue>
    <volume/>
    <type>articler</type>
    <publisherName/>
    <publisherPlace/>
    <creatingCorporation/>
    <contributingCorporation/>
    <belongsToBibliography>0</belongsToBibliography>
    <completedDate>2017-03-03</completedDate>
    <publishedDate>--</publishedDate>
    <thesisDateAccepted>--</thesisDateAccepted>
    <title language="eng">Understanding the growth mechanism of graphene on Ge/Si(001) surfaces</title>
    <parentTitle language="eng">Scientific Reports</parentTitle>
    <identifier type="doi">10.1038/srep31639</identifier>
    <identifier type="issn">2045-2322</identifier>
    <enrichment key="BTU">an der BTU erstellt / created at BTU</enrichment>
    <author>
      <firstName>Jarek Marek</firstName>
      <lastName>Dabrowski</lastName>
    </author>
    <submitter>
      <firstName>Marion</firstName>
      <lastName>Tülling</lastName>
    </submitter>
    <author>
      <firstName>Gunther</firstName>
      <lastName>Lippert</lastName>
    </author>
    <author>
      <firstName>J.</firstName>
      <lastName>Avila</lastName>
    </author>
    <author>
      <firstName>Jens</firstName>
      <lastName>Baringhaus</lastName>
    </author>
    <author>
      <firstName>I.</firstName>
      <lastName>Colambo</lastName>
    </author>
    <author>
      <firstName>Yu. S.</firstName>
      <lastName>Dedkov</lastName>
    </author>
    <author>
      <firstName>Felix</firstName>
      <lastName>Herziger</lastName>
    </author>
    <author>
      <firstName>Grzegorz</firstName>
      <lastName>Lupina</lastName>
    </author>
    <author>
      <firstName>J.</firstName>
      <lastName>Maultzsch</lastName>
    </author>
    <author>
      <firstName>T.</firstName>
      <lastName>Schaffus</lastName>
    </author>
    <author>
      <firstName>Thomas</firstName>
      <lastName>Schröder</lastName>
    </author>
    <author>
      <firstName>Małgorzata</firstName>
      <lastName>Sowinska</lastName>
    </author>
    <author>
      <firstName>Christoph</firstName>
      <lastName>Tegenkamp</lastName>
    </author>
    <author>
      <firstName>D.</firstName>
      <lastName>Vignaud</lastName>
    </author>
    <author>
      <firstName>Maria Carmen</firstName>
      <lastName>Asensio</lastName>
    </author>
    <collection role="institutes" number="1521">FG Halbleitermaterialien</collection>
  </doc>
  <doc>
    <id>18965</id>
    <completedYear/>
    <publishedYear>2016</publishedYear>
    <thesisYearAccepted/>
    <language>eng</language>
    <pageFirst>485707</pageFirst>
    <pageLast/>
    <pageNumber/>
    <edition/>
    <issue>48</issue>
    <volume>27</volume>
    <type>articler</type>
    <publisherName/>
    <publisherPlace/>
    <creatingCorporation/>
    <contributingCorporation/>
    <belongsToBibliography>0</belongsToBibliography>
    <completedDate>2017-03-03</completedDate>
    <publishedDate>--</publishedDate>
    <thesisDateAccepted>--</thesisDateAccepted>
    <title language="eng">Observation of field emission from GeSn nanoparticles epitaxially grown on silicon nanotip arrays</title>
    <parentTitle language="eng">Nanotechnology</parentTitle>
    <identifier type="issn">1361-6528</identifier>
    <identifier type="issn">0957-4484</identifier>
    <enrichment key="BTU">an der BTU erstellt / created at BTU</enrichment>
    <author>
      <firstName>Antonio di</firstName>
      <lastName>Bartolomeo</lastName>
    </author>
    <submitter>
      <firstName>Marion</firstName>
      <lastName>Tülling</lastName>
    </submitter>
    <author>
      <firstName>Maurizio</firstName>
      <lastName>Passacantando</lastName>
    </author>
    <author>
      <firstName>Gang</firstName>
      <lastName>Niu</lastName>
    </author>
    <author>
      <firstName>Viktoria</firstName>
      <lastName>Schlykow</lastName>
    </author>
    <author>
      <firstName>Grzegorz</firstName>
      <lastName>Lupina</lastName>
    </author>
    <author>
      <firstName>Filippo</firstName>
      <lastName>Giubileo</lastName>
    </author>
    <author>
      <firstName>Thomas</firstName>
      <lastName>Schröder</lastName>
    </author>
    <collection role="institutes" number="1521">FG Halbleitermaterialien</collection>
  </doc>
  <doc>
    <id>18967</id>
    <completedYear/>
    <publishedYear>2016</publishedYear>
    <thesisYearAccepted/>
    <language>eng</language>
    <pageFirst>33786</pageFirst>
    <pageLast>33793</pageLast>
    <pageNumber/>
    <edition/>
    <issue>49</issue>
    <volume>8</volume>
    <type>articler</type>
    <publisherName/>
    <publisherPlace/>
    <creatingCorporation/>
    <contributingCorporation/>
    <belongsToBibliography>0</belongsToBibliography>
    <completedDate>2017-03-03</completedDate>
    <publishedDate>--</publishedDate>
    <thesisDateAccepted>--</thesisDateAccepted>
    <title language="eng">Metal-free, CVD Graphene synthesis on 200 mm Ge / Si(001) substrates</title>
    <parentTitle language="eng">ACS Applied Materials and Interfaces</parentTitle>
    <identifier type="doi">10.1021/acsami.6b11397</identifier>
    <identifier type="issn">1944-8244</identifier>
    <identifier type="issn">1944-8252</identifier>
    <enrichment key="BTU">an der BTU erstellt / created at BTU</enrichment>
    <author>
      <firstName>Mindaugas</firstName>
      <lastName>Lukosius</lastName>
    </author>
    <submitter>
      <firstName>Marion</firstName>
      <lastName>Tülling</lastName>
    </submitter>
    <author>
      <firstName>Jarek Marek</firstName>
      <lastName>Dabrowski</lastName>
    </author>
    <author>
      <firstName>Marco</firstName>
      <lastName>Lisker</lastName>
    </author>
    <author>
      <firstName>Julia</firstName>
      <lastName>Kitzmann</lastName>
    </author>
    <author>
      <firstName>Sebastian</firstName>
      <lastName>Schulze</lastName>
    </author>
    <author>
      <firstName>Gunther</firstName>
      <lastName>Lippert</lastName>
    </author>
    <author>
      <firstName>Oksana</firstName>
      <lastName>Fursenko</lastName>
    </author>
    <author>
      <firstName>Yuji</firstName>
      <lastName>Yamamoto</lastName>
    </author>
    <author>
      <firstName>Markus Andreas</firstName>
      <lastName>Schubert</lastName>
    </author>
    <author>
      <firstName>Hans-Michael</firstName>
      <lastName>Krause</lastName>
    </author>
    <author>
      <firstName>Andre</firstName>
      <lastName>Wolff</lastName>
    </author>
    <author>
      <firstName>A.</firstName>
      <lastName>Mai</lastName>
    </author>
    <author>
      <firstName>Thomas</firstName>
      <lastName>Schröder</lastName>
    </author>
    <author>
      <firstName>Grzegorz</firstName>
      <lastName>Lupina</lastName>
    </author>
    <collection role="institutes" number="1521">FG Halbleitermaterialien</collection>
  </doc>
  <doc>
    <id>18972</id>
    <completedYear/>
    <publishedYear>2015</publishedYear>
    <thesisYearAccepted/>
    <language>eng</language>
    <pageFirst>475202</pageFirst>
    <pageLast/>
    <pageNumber/>
    <edition/>
    <issue>47</issue>
    <volume>26</volume>
    <type>articler</type>
    <publisherName/>
    <publisherPlace/>
    <creatingCorporation/>
    <contributingCorporation/>
    <belongsToBibliography>0</belongsToBibliography>
    <completedDate>2017-03-03</completedDate>
    <publishedDate>--</publishedDate>
    <thesisDateAccepted>--</thesisDateAccepted>
    <title language="eng">Graphene field effect transistors with Niobium contacts and asymmetric transfer characteristics</title>
    <parentTitle language="eng">Nanotechnology</parentTitle>
    <identifier type="issn">1361-6528</identifier>
    <identifier type="issn">0957-4484</identifier>
    <enrichment key="BTU">an der BTU erstellt / created at BTU</enrichment>
    <author>
      <firstName>Antonio di</firstName>
      <lastName>Bartolomeo</lastName>
    </author>
    <submitter>
      <firstName>Marion</firstName>
      <lastName>Tülling</lastName>
    </submitter>
    <author>
      <firstName>Filippo</firstName>
      <lastName>Giubileo</lastName>
    </author>
    <author>
      <firstName>Francesco</firstName>
      <lastName>Romeo</lastName>
    </author>
    <author>
      <firstName>Paolo</firstName>
      <lastName>Sabatino</lastName>
    </author>
    <author>
      <firstName>Giovanni</firstName>
      <lastName>Carapella</lastName>
    </author>
    <author>
      <firstName>Laura</firstName>
      <lastName>Iemmo</lastName>
    </author>
    <author>
      <firstName>Thomas</firstName>
      <lastName>Schröder</lastName>
    </author>
    <author>
      <firstName>Grzegorz</firstName>
      <lastName>Lupina</lastName>
    </author>
    <collection role="institutes" number="1521">FG Halbleitermaterialien</collection>
  </doc>
</export-example>
