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    <title language="eng">Formation of Mn5Ge3 on a Recess-Etched Ge (111) Quantum-Well Structure for Semiconductor Spintronics</title>
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      <firstName>David</firstName>
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      <firstName>Hannes S.</firstName>
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    <title language="eng">Lateral Mn&lt;sub&gt;5&lt;/sub&gt;Ge&lt;sub&gt;3&lt;/sub&gt; spin-valve in contact with a high-mobility Ge two-dimensional hole gas</title>
    <abstract language="eng">Abstract&#13;
 Ge two-dimensional hole gases (2DHG) in strained modulation-doped quantum-wells represent a promising material platform for future spintronic applications due to their excellent spin transport properties and the theoretical possibility of efficient spin manipulation. Due to the continuous development of epitaxial growth recipes extreme high hole mobilities and low effective masses can be achieved, promising an efficient spin transport. Furthermore, the Ge 2DHG can be integrated in the well-established industrial complementary metal-oxide-semiconductor (CMOS) devices technology. However, efficient electrical spin injection into a Ge 2DHG—an essential prerequisite for the realization of spintronic devices—has not yet been demonstrated. In this work, we report the fabrication and low-temperature magnetoresistance (MR) measurements of a laterally structured Mn5Ge3/Ge 2DHG/ Mn5Ge3 device. The ferromagnetic Mn5Ge3 contacts are grown directly into the Ge quantum well by means of an interdiffusion process with a spacing of approximately 130 nm, forming a direct electrical contact between the ferromagnetic metal and the Ge 2DHG. Here, we report for the first time a clear MR signal for temperatures below 13 K possibly arising from successful spin injection into the high mobility Ge 2DHG. The results represent a step forward toward the realization of CMOS compatible spintronic devices based on a 2DHG.</abstract>
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In this work, we report the fabrication and low-temperature magnetoresistance (MR) measurements of a laterally structured Mn&lt;jats:sub&gt;5&lt;\/jats:sub&gt;Ge&lt;jats:sub&gt;3&lt;\/jats:sub&gt;\/Ge 2DHG\/ Mn&lt;jats:sub&gt;5&lt;\/jats:sub&gt;Ge&lt;jats:sub&gt;3&lt;\/jats:sub&gt; device. The ferromagnetic Mn&lt;jats:sub&gt;5&lt;\/jats:sub&gt;Ge&lt;jats:sub&gt;3&lt;\/jats:sub&gt; contacts are grown directly into the Ge quantum well by means of an interdiffusion process with a spacing of approximately 130 nm, forming a direct electrical contact between the ferromagnetic metal and the Ge 2DHG. Here, we report for the first time a clear MR signal for temperatures below 13 K possibly arising from successful spin injection into the high mobility Ge 2DHG. 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    <volume>128</volume>
    <type>articler</type>
    <publisherName/>
    <publisherPlace/>
    <creatingCorporation/>
    <contributingCorporation/>
    <belongsToBibliography>0</belongsToBibliography>
    <completedDate>2020-07-08</completedDate>
    <publishedDate>--</publishedDate>
    <thesisDateAccepted>--</thesisDateAccepted>
    <title language="eng">Comparing Fourier transform infrared spectroscopy results with photocurrent measurements for Ge-on-Si PIN photodetectors with and without Al nanoantennas</title>
    <parentTitle language="eng">Journal of Applied Physics</parentTitle>
    <identifier type="doi">10.1063/5.0012279</identifier>
    <identifier type="issn">1089-7550</identifier>
    <enrichment key="BTU">an der BTU erstellt / created at BTU</enrichment>
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    <author>
      <firstName>Lion</firstName>
      <lastName>Augel</lastName>
    </author>
    <submitter>
      <firstName>Marion</firstName>
      <lastName>Tülling</lastName>
    </submitter>
    <author>
      <firstName>Inga Anita</firstName>
      <lastName>Fischer</lastName>
    </author>
    <author>
      <firstName>Martin</firstName>
      <lastName>Gollhofer</lastName>
    </author>
    <author>
      <firstName>Michael</firstName>
      <lastName>Oehme</lastName>
    </author>
    <author>
      <firstName>Jörg</firstName>
      <lastName>Schulze</lastName>
    </author>
    <collection role="institutes" number="1504">FG Experimentalphysik und funktionale Materialien</collection>
  </doc>
  <doc>
    <id>27291</id>
    <completedYear/>
    <publishedYear>2021</publishedYear>
    <thesisYearAccepted/>
    <language>eng</language>
    <pageFirst/>
    <pageLast/>
    <pageNumber>8</pageNumber>
    <edition/>
    <issue>8</issue>
    <volume>33</volume>
    <type>articler</type>
    <publisherName/>
    <publisherPlace/>
    <creatingCorporation/>
    <contributingCorporation/>
    <belongsToBibliography>0</belongsToBibliography>
    <completedDate>2021-04-13</completedDate>
    <publishedDate>--</publishedDate>
    <thesisDateAccepted>--</thesisDateAccepted>
    <title language="eng">Weak localization and weak antilocalization in doped Ge1-ySny layers with up to 8% Sn</title>
    <parentTitle language="eng">Journal of Physics: Condensed Matter</parentTitle>
    <identifier type="doi">10.1088/1361-648X/abcb68</identifier>
    <identifier type="issn">1361-648X</identifier>
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    <enrichment key="Artikelnummer">085703</enrichment>
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    <author>
      <firstName>David</firstName>
      <lastName>Weißhaupt</lastName>
    </author>
    <submitter>
      <firstName>Marion</firstName>
      <lastName>Tülling</lastName>
    </submitter>
    <author>
      <firstName>Hannes S.</firstName>
      <lastName>Funk</lastName>
    </author>
    <author>
      <firstName>Michal</firstName>
      <lastName>Kern</lastName>
    </author>
    <author>
      <firstName>Marco M.</firstName>
      <lastName>Dettling</lastName>
    </author>
    <author>
      <firstName>Daniel</firstName>
      <lastName>Schwarz</lastName>
    </author>
    <author>
      <firstName>Michael</firstName>
      <lastName>Oehme</lastName>
    </author>
    <author>
      <firstName>Christoph</firstName>
      <lastName>Sürgers</lastName>
    </author>
    <author>
      <firstName>Joris van</firstName>
      <lastName>Slageren</lastName>
    </author>
    <author>
      <firstName>Inga Anita</firstName>
      <lastName>Fischer</lastName>
    </author>
    <author>
      <firstName>Jörg</firstName>
      <lastName>Schulze</lastName>
    </author>
    <collection role="institutes" number="1504">FG Experimentalphysik und funktionale Materialien</collection>
  </doc>
  <doc>
    <id>27292</id>
    <completedYear/>
    <publishedYear>2021</publishedYear>
    <thesisYearAccepted/>
    <language>eng</language>
    <pageFirst/>
    <pageLast/>
    <pageNumber>9</pageNumber>
    <edition/>
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    <volume/>
    <type>articler</type>
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    <contributingCorporation/>
    <belongsToBibliography>0</belongsToBibliography>
    <completedDate>2021-04-13</completedDate>
    <publishedDate>--</publishedDate>
    <thesisDateAccepted>--</thesisDateAccepted>
    <title language="eng">Raman shifts in MBE‐grown SixGe1 − x − ySny alloys with large Si content</title>
    <parentTitle language="eng">Journal of Raman Spectroscopy</parentTitle>
    <identifier type="doi">10.1002/jrs.6098</identifier>
    <identifier type="issn">1097-4555</identifier>
    <enrichment key="BTU">an der BTU erstellt / created at BTU</enrichment>
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    <enrichment key="Fprofil">4 Künstliche Intelligenz und Sensorik / Artificial Intelligence and Sensor Technology</enrichment>
    <author>
      <firstName>Jon</firstName>
      <lastName>Schlipf</lastName>
    </author>
    <submitter>
      <firstName>Marion</firstName>
      <lastName>Tülling</lastName>
    </submitter>
    <author>
      <firstName>Henriette</firstName>
      <lastName>Tetzner</lastName>
    </author>
    <author>
      <firstName>Davide</firstName>
      <lastName>Spirito</lastName>
    </author>
    <author>
      <firstName>Constanza Lucia</firstName>
      <lastName>Manganelli</lastName>
    </author>
    <author>
      <firstName>Giovanni</firstName>
      <lastName>Capellini</lastName>
    </author>
    <author>
      <firstName>Michael R. S.</firstName>
      <lastName>Huang</lastName>
    </author>
    <author>
      <firstName>Christoph T.</firstName>
      <lastName>Koch</lastName>
    </author>
    <author>
      <firstName>Caterina J.</firstName>
      <lastName>Clausen</lastName>
    </author>
    <author>
      <firstName>Ahmed</firstName>
      <lastName>Elsayed</lastName>
    </author>
    <author>
      <firstName>Jörg</firstName>
      <lastName>Schulze</lastName>
    </author>
    <author>
      <firstName>Inga Anita</firstName>
      <lastName>Fischer</lastName>
    </author>
    <collection role="institutes" number="1504">FG Experimentalphysik und funktionale Materialien</collection>
  </doc>
  <doc>
    <id>27293</id>
    <completedYear/>
    <publishedYear>2021</publishedYear>
    <thesisYearAccepted/>
    <language>eng</language>
    <pageFirst/>
    <pageLast/>
    <pageNumber>9</pageNumber>
    <edition/>
    <issue>11</issue>
    <volume/>
    <type>articler</type>
    <publisherName/>
    <publisherPlace/>
    <creatingCorporation/>
    <contributingCorporation/>
    <belongsToBibliography>0</belongsToBibliography>
    <completedDate>2021-04-13</completedDate>
    <publishedDate>--</publishedDate>
    <thesisDateAccepted>--</thesisDateAccepted>
    <title language="eng">Photonic-plasmonic mode coupling in nanopillar Ge-on-Si PIN photodiodes</title>
    <abstract language="deu">Incorporating group IV photonic nanostructures within active top-illuminated photonic devices often requires light-transmissive contact schemes. In this context, plasmonic nanoapertures in metallic films can not only be realized using CMOS compatible metals and processes, they can also serve to influence the wavelength-dependent device responsivities. Here, we investigate crescent-shaped nanoapertures in close proximity to Ge-on-Si PIN nanopillar photodetectors both in simulation and experiment. In our geometries, the absorption within the devices is mainly shaped by the absorption characteristics of the vertical semiconductor nanopillar structures (leaky waveguide modes). The plasmonic resonances can be used to influence how incident light couples into the leaky modes within the nanopillars. Our results can serve as a starting point to selectively tune our device geometries for applications in spectroscopy or refractive index sensing.</abstract>
    <parentTitle language="eng">Scientific Reports</parentTitle>
    <identifier type="doi">10.1038/s41598-021-85012-z</identifier>
    <identifier type="issn">2045-2322</identifier>
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    <enrichment key="Artikelnummer">5723</enrichment>
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    <author>
      <firstName>Lion</firstName>
      <lastName>Augel</lastName>
    </author>
    <submitter>
      <firstName>Marion</firstName>
      <lastName>Tülling</lastName>
    </submitter>
    <author>
      <firstName>Jon</firstName>
      <lastName>Schlipf</lastName>
    </author>
    <author>
      <firstName>Sergej</firstName>
      <lastName>Bullert</lastName>
    </author>
    <author>
      <firstName>Sebastian</firstName>
      <lastName>Bürzele</lastName>
    </author>
    <author>
      <firstName>Jörg</firstName>
      <lastName>Schulze</lastName>
    </author>
    <author>
      <firstName>Inga Anita</firstName>
      <lastName>Fischer</lastName>
    </author>
    <collection role="institutes" number="1504">FG Experimentalphysik und funktionale Materialien</collection>
  </doc>
  <doc>
    <id>27916</id>
    <completedYear/>
    <publishedYear>2021</publishedYear>
    <thesisYearAccepted/>
    <language>eng</language>
    <pageFirst>36201</pageFirst>
    <pageLast>36210</pageLast>
    <pageNumber/>
    <edition/>
    <issue>22</issue>
    <volume>Vol. 29</volume>
    <type>articler</type>
    <publisherName/>
    <publisherPlace/>
    <creatingCorporation/>
    <contributingCorporation/>
    <belongsToBibliography>0</belongsToBibliography>
    <completedDate>2021-11-15</completedDate>
    <publishedDate>--</publishedDate>
    <thesisDateAccepted>--</thesisDateAccepted>
    <title language="eng">Rigorous coupled-wave analysis of a multi-layered plasmonic integrated refractive index sensor</title>
    <parentTitle language="eng">Optics Express</parentTitle>
    <identifier type="doi">10.1364/OE.438585</identifier>
    <identifier type="issn">1094-4087</identifier>
    <enrichment key="BTU">an der BTU erstellt / created at BTU</enrichment>
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    <author>
      <firstName>Jon</firstName>
      <lastName>Schlipf</lastName>
    </author>
    <submitter>
      <firstName>Marion</firstName>
      <lastName>Tülling</lastName>
    </submitter>
    <author>
      <firstName>Inga Anita</firstName>
      <lastName>Fischer</lastName>
    </author>
    <collection role="institutes" number="1302">FG Algorithmische Mathematik</collection>
    <collection role="institutes" number="1504">FG Experimentalphysik und funktionale Materialien</collection>
  </doc>
  <doc>
    <id>27917</id>
    <completedYear/>
    <publishedYear>2021</publishedYear>
    <thesisYearAccepted/>
    <language>eng</language>
    <pageFirst/>
    <pageLast/>
    <pageNumber/>
    <edition/>
    <issue>15</issue>
    <volume>119</volume>
    <type>articler</type>
    <publisherName/>
    <publisherPlace/>
    <creatingCorporation/>
    <contributingCorporation/>
    <belongsToBibliography>0</belongsToBibliography>
    <completedDate>2021-11-15</completedDate>
    <publishedDate>--</publishedDate>
    <thesisDateAccepted>--</thesisDateAccepted>
    <title language="eng">Current leakage mechanisms related to threading dislocations in Ge-rich SiGe heterostructures grown on Si(001)</title>
    <parentTitle language="eng">Applied Physics Letters</parentTitle>
    <identifier type="doi">10.1063/5.0064477</identifier>
    <identifier type="issn">1077-3118</identifier>
    <identifier type="issn">0003-6951</identifier>
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    <enrichment key="Artikelnummer">153504</enrichment>
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    <author>
      <firstName>Henriette</firstName>
      <lastName>Tetzner</lastName>
    </author>
    <submitter>
      <firstName>Marion</firstName>
      <lastName>Tülling</lastName>
    </submitter>
    <author>
      <firstName>Inga Anita</firstName>
      <lastName>Fischer</lastName>
    </author>
    <author>
      <firstName>Oliver</firstName>
      <lastName>Skibitzki</lastName>
    </author>
    <author>
      <firstName>M. M.</firstName>
      <lastName>Mirza</lastName>
    </author>
    <author>
      <firstName>Constanza Lucia</firstName>
      <lastName>Manganelli</lastName>
    </author>
    <author>
      <firstName>G.</firstName>
      <lastName>Luongo</lastName>
    </author>
    <author>
      <firstName>Davide</firstName>
      <lastName>Spirito</lastName>
    </author>
    <author>
      <firstName>J. P.</firstName>
      <lastName>Douglas</lastName>
    </author>
    <author>
      <firstName>Monica</firstName>
      <lastName>De Seta</lastName>
    </author>
    <author>
      <firstName>Giovanni</firstName>
      <lastName>Capellini</lastName>
    </author>
    <collection role="institutes" number="1504">FG Experimentalphysik und funktionale Materialien</collection>
  </doc>
  <doc>
    <id>27918</id>
    <completedYear/>
    <publishedYear>2021</publishedYear>
    <thesisYearAccepted/>
    <language>eng</language>
    <pageFirst/>
    <pageLast/>
    <pageNumber/>
    <edition/>
    <issue>44</issue>
    <volume>54</volume>
    <type>articler</type>
    <publisherName/>
    <publisherPlace/>
    <creatingCorporation/>
    <contributingCorporation/>
    <belongsToBibliography>0</belongsToBibliography>
    <completedDate>2021-11-15</completedDate>
    <publishedDate>--</publishedDate>
    <thesisDateAccepted>--</thesisDateAccepted>
    <title language="eng">Plasmonic gratings from highly doped Ge1−ySny films on Si</title>
    <parentTitle language="eng">Journal of Physics D: Applied Physics</parentTitle>
    <identifier type="issn">1361-6463</identifier>
    <enrichment key="BTU">an der BTU erstellt / created at BTU</enrichment>
    <enrichment key="opus.source">publish</enrichment>
    <enrichment key="Artikelnummer">445109</enrichment>
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    <author>
      <firstName>Fritz</firstName>
      <lastName>Bergmann</lastName>
    </author>
    <submitter>
      <firstName>Marion</firstName>
      <lastName>Tülling</lastName>
    </submitter>
    <author>
      <firstName>Markus</firstName>
      <lastName>Ayasse</lastName>
    </author>
    <author>
      <firstName>Jon</firstName>
      <lastName>Schlipf</lastName>
    </author>
    <author>
      <firstName>Florian</firstName>
      <lastName>Mörz</lastName>
    </author>
    <author>
      <firstName>David</firstName>
      <lastName>Weißhaupt</lastName>
    </author>
    <author>
      <firstName>Michael</firstName>
      <lastName>Oehme</lastName>
    </author>
    <author>
      <firstName>Slawomir</firstName>
      <lastName>Prucnal</lastName>
    </author>
    <author>
      <firstName>Yuma</firstName>
      <lastName>Kawaguchi</lastName>
    </author>
    <author>
      <firstName>Daniel</firstName>
      <lastName>Schwarz</lastName>
    </author>
    <author>
      <firstName>Inga Anita</firstName>
      <lastName>Fischer</lastName>
    </author>
    <author>
      <firstName>Jörg</firstName>
      <lastName>Schulze</lastName>
    </author>
    <collection role="institutes" number="1504">FG Experimentalphysik und funktionale Materialien</collection>
  </doc>
  <doc>
    <id>28032</id>
    <completedYear/>
    <publishedYear>2021</publishedYear>
    <thesisYearAccepted/>
    <language>eng</language>
    <pageFirst>36</pageFirst>
    <pageLast>39</pageLast>
    <pageNumber/>
    <edition/>
    <issue/>
    <volume/>
    <type>conferenceobject_ref</type>
    <publisherName>Piscataway</publisherName>
    <publisherPlace>IEEE</publisherPlace>
    <creatingCorporation/>
    <contributingCorporation/>
    <belongsToBibliography>0</belongsToBibliography>
    <completedDate>2021-11-30</completedDate>
    <publishedDate>--</publishedDate>
    <thesisDateAccepted>--</thesisDateAccepted>
    <title language="eng">Titanium and Nickel as alternative materials for mid Infrared Plasmonic</title>
    <parentTitle language="eng">44th International Convention on Information, Communication and Electronic Technology, MIPRO 2021, Opatija, Croatia, September 27 - Oct. 1, 2021</parentTitle>
    <identifier type="isbn">978-953-233-101-1</identifier>
    <identifier type="doi">10.23919/MIPRO52101.2021.9597155</identifier>
    <identifier type="isbn">978-1-6654-4761-4</identifier>
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    <author>
      <firstName>Fritz</firstName>
      <lastName>Berkmann</lastName>
    </author>
    <submitter>
      <firstName>Marion</firstName>
      <lastName>Tülling</lastName>
    </submitter>
    <author>
      <firstName>Markus</firstName>
      <lastName>Ayasse</lastName>
    </author>
    <author>
      <firstName>Florian</firstName>
      <lastName>Mörz</lastName>
    </author>
    <author>
      <firstName>Inga Anita</firstName>
      <lastName>Fischer</lastName>
    </author>
    <author>
      <firstName>Jörg</firstName>
      <lastName>Schulze</lastName>
    </author>
    <collection role="institutes" number="1504">FG Experimentalphysik und funktionale Materialien</collection>
  </doc>
  <doc>
    <id>28338</id>
    <completedYear/>
    <publishedYear>2022</publishedYear>
    <thesisYearAccepted/>
    <language>eng</language>
    <pageFirst/>
    <pageLast/>
    <pageNumber>8</pageNumber>
    <edition/>
    <issue/>
    <volume>546</volume>
    <type>articler</type>
    <publisherName/>
    <publisherPlace/>
    <creatingCorporation/>
    <contributingCorporation/>
    <belongsToBibliography>0</belongsToBibliography>
    <completedDate>2022-01-06</completedDate>
    <publishedDate>--</publishedDate>
    <thesisDateAccepted>--</thesisDateAccepted>
    <title language="eng">Composition and magnetic properties of thin films grown by interdiffusion of Mn and Sn-Rich, Ge lattice matched SixGe1-x-ySny layers</title>
    <parentTitle language="eng">Journal of Magnetism and Magnetic Materials</parentTitle>
    <identifier type="issn">0304-8853</identifier>
    <identifier type="doi">10.1016/j.jmmm.2021.168731.</identifier>
    <enrichment key="BTU">an der BTU erstellt / created at BTU</enrichment>
    <enrichment key="Artikelnummer">168731</enrichment>
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    <enrichment key="Fprofil">4 Künstliche Intelligenz und Sensorik / Artificial Intelligence and Sensor Technology</enrichment>
    <author>
      <firstName>Hannes S.</firstName>
      <lastName>Funk</lastName>
    </author>
    <submitter>
      <firstName>Marion</firstName>
      <lastName>Tülling</lastName>
    </submitter>
    <author>
      <firstName>Michael</firstName>
      <lastName>Kern</lastName>
    </author>
    <author>
      <firstName>David</firstName>
      <lastName>Weißhaupt</lastName>
    </author>
    <author>
      <firstName>Christoph</firstName>
      <lastName>Sürgers</lastName>
    </author>
    <author>
      <firstName>Inga Anita</firstName>
      <lastName>Fischer</lastName>
    </author>
    <author>
      <firstName>Michael</firstName>
      <lastName>Oehme</lastName>
    </author>
    <author>
      <firstName>Joris van</firstName>
      <lastName>Slageren</lastName>
    </author>
    <author>
      <firstName>Jörg</firstName>
      <lastName>Schulze</lastName>
    </author>
    <collection role="institutes" number="1504">FG Experimentalphysik und funktionale Materialien</collection>
  </doc>
  <doc>
    <id>28684</id>
    <completedYear/>
    <publishedYear>2022</publishedYear>
    <thesisYearAccepted/>
    <language>eng</language>
    <pageFirst/>
    <pageLast/>
    <pageNumber>11</pageNumber>
    <edition/>
    <issue/>
    <volume>123</volume>
    <type>articler</type>
    <publisherName/>
    <publisherPlace/>
    <creatingCorporation/>
    <contributingCorporation/>
    <belongsToBibliography>0</belongsToBibliography>
    <completedDate>2022-03-16</completedDate>
    <publishedDate>--</publishedDate>
    <thesisDateAccepted>--</thesisDateAccepted>
    <title language="eng">Investigation of Ge-Based P-Channel Planar-Doped Barrier FETs integrated&#13;
on Si</title>
    <parentTitle language="eng">Microelectronics Journal</parentTitle>
    <identifier type="doi">10.1016/j.mejo.2022.105404</identifier>
    <identifier type="issn">1879-2391</identifier>
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    <enrichment key="Artikelnummer">105404</enrichment>
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    <author>
      <firstName>Yasmine</firstName>
      <lastName>Elogail</lastName>
    </author>
    <submitter>
      <firstName>Marion</firstName>
      <lastName>Tülling</lastName>
    </submitter>
    <author>
      <firstName>Fritz</firstName>
      <lastName>Berkmann</lastName>
    </author>
    <author>
      <firstName>Caterina J.</firstName>
      <lastName>Clausen</lastName>
    </author>
    <author>
      <firstName>Inga Anita</firstName>
      <lastName>Fischer</lastName>
    </author>
    <author>
      <firstName>Linda A.</firstName>
      <lastName>Hänel</lastName>
    </author>
    <author>
      <firstName>Daniel</firstName>
      <lastName>Schwarz</lastName>
    </author>
    <author>
      <firstName>Jörg</firstName>
      <lastName>Schulze</lastName>
    </author>
    <collection role="institutes" number="1504">FG Experimentalphysik und funktionale Materialien</collection>
  </doc>
  <doc>
    <id>28685</id>
    <completedYear/>
    <publishedYear>2022</publishedYear>
    <thesisYearAccepted/>
    <language>eng</language>
    <pageFirst>105102-1</pageFirst>
    <pageLast>105102-8</pageLast>
    <pageNumber/>
    <edition/>
    <issue/>
    <volume>131</volume>
    <type>articler</type>
    <publisherName/>
    <publisherPlace/>
    <creatingCorporation/>
    <contributingCorporation/>
    <belongsToBibliography>0</belongsToBibliography>
    <completedDate>2022-03-16</completedDate>
    <publishedDate>--</publishedDate>
    <thesisDateAccepted>--</thesisDateAccepted>
    <title language="eng">Tuning of Curie temperature in Mn5Ge3 films</title>
    <parentTitle language="eng">Journal of Applied Physics</parentTitle>
    <identifier type="doi">10.1063/5.0066717</identifier>
    <identifier type="issn">1089-7550</identifier>
    <enrichment key="BTU">an der BTU erstellt / created at BTU</enrichment>
    <enrichment key="opus.source">publish</enrichment>
    <enrichment key="Artikelnummer">105102</enrichment>
    <enrichment key="opus.doi.autoCreate">false</enrichment>
    <enrichment key="opus.urn.autoCreate">false</enrichment>
    <enrichment key="Fprofil">4 Künstliche Intelligenz und Sensorik / Artificial Intelligence and Sensor Technology</enrichment>
    <author>
      <firstName>Yufang</firstName>
      <lastName>Xie</lastName>
    </author>
    <submitter>
      <firstName>Marion</firstName>
      <lastName>Tülling</lastName>
    </submitter>
    <author>
      <firstName>Magdalena</firstName>
      <lastName>Birowska</lastName>
    </author>
    <author>
      <firstName>Hannes S.</firstName>
      <lastName>Funk</lastName>
    </author>
    <author>
      <firstName>Inga Anita</firstName>
      <lastName>Fischer</lastName>
    </author>
    <author>
      <firstName>Daniel</firstName>
      <lastName>Schwarz</lastName>
    </author>
    <author>
      <firstName>Jörg</firstName>
      <lastName>Schulze</lastName>
    </author>
    <author>
      <firstName>Yu-Jia</firstName>
      <lastName>Zeng</lastName>
    </author>
    <author>
      <firstName>Manfred</firstName>
      <lastName>Helm</lastName>
    </author>
    <author>
      <firstName>Shengqiang</firstName>
      <lastName>Zhou</lastName>
    </author>
    <author>
      <firstName>Slawomir</firstName>
      <lastName>Prucnal</lastName>
    </author>
    <collection role="institutes" number="1504">FG Experimentalphysik und funktionale Materialien</collection>
  </doc>
  <doc>
    <id>29049</id>
    <completedYear/>
    <publishedYear>2022</publishedYear>
    <thesisYearAccepted/>
    <language>eng</language>
    <pageFirst>1</pageFirst>
    <pageLast>8</pageLast>
    <pageNumber/>
    <edition/>
    <issue>3</issue>
    <volume>14</volume>
    <type>articler</type>
    <publisherName/>
    <publisherPlace/>
    <creatingCorporation/>
    <contributingCorporation/>
    <belongsToBibliography>0</belongsToBibliography>
    <completedDate>2022-06-29</completedDate>
    <publishedDate>--</publishedDate>
    <thesisDateAccepted>--</thesisDateAccepted>
    <title language="eng">Optimization of fully integrated Al nanohole array-based refractive index sensors for use with a LED light source  Fritz Berkmann</title>
    <parentTitle language="eng">IEEE Photonics Journal</parentTitle>
    <identifier type="url">https://ieeexplore.ieee.org/document/9781306</identifier>
    <identifier type="doi">10.1109/JPHOT.2022.3177354</identifier>
    <identifier type="issn">1943-0655</identifier>
    <enrichment key="BTU">nicht an der BTU erstellt / not created at BTU</enrichment>
    <enrichment key="Artikelnummer">4831708</enrichment>
    <enrichment key="opus.source">publish</enrichment>
    <enrichment key="opus.doi.autoCreate">false</enrichment>
    <enrichment key="opus.urn.autoCreate">false</enrichment>
    <author>
      <firstName>Fritz</firstName>
      <lastName>Berkmann</lastName>
    </author>
    <submitter>
      <firstName>Katrin</firstName>
      <lastName>Gregor</lastName>
    </submitter>
    <author>
      <firstName>Lion</firstName>
      <lastName>Augel</lastName>
    </author>
    <author>
      <firstName>Michael</firstName>
      <lastName>Hack</lastName>
    </author>
    <author>
      <firstName>Yuma</firstName>
      <lastName>Kawaguchi</lastName>
    </author>
    <author>
      <firstName>David</firstName>
      <lastName>Weißhaupt</lastName>
    </author>
    <author>
      <firstName>Inga Anita</firstName>
      <lastName>Fischer</lastName>
    </author>
    <author>
      <firstName>Jörg</firstName>
      <lastName>Schulze</lastName>
    </author>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>Sensors</value>
    </subject>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>Refractive index</value>
    </subject>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>Optical variables control</value>
    </subject>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>Optical refraction</value>
    </subject>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>Optical device fabrication</value>
    </subject>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>Germanium</value>
    </subject>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>Solid modeling</value>
    </subject>
    <collection role="institutes" number="1504">FG Experimentalphysik und funktionale Materialien</collection>
  </doc>
  <doc>
    <id>29043</id>
    <completedYear/>
    <publishedYear>2022</publishedYear>
    <thesisYearAccepted/>
    <language>eng</language>
    <pageFirst>1</pageFirst>
    <pageLast>8</pageLast>
    <pageNumber/>
    <edition/>
    <issue>6</issue>
    <volume>37</volume>
    <type>articler</type>
    <publisherName/>
    <publisherPlace/>
    <creatingCorporation/>
    <contributingCorporation/>
    <belongsToBibliography>0</belongsToBibliography>
    <completedDate>2022-06-29</completedDate>
    <publishedDate>--</publishedDate>
    <thesisDateAccepted>--</thesisDateAccepted>
    <title language="eng">Influence of fabrication parameters on the magnetic and structural properties of Mn5Ge3</title>
    <abstract language="eng">Mn5Ge3 is a ferromagnetic material with the high potential for spintronic applications. Usually, it is grown by conventional solid state reaction of manganese with germanium using molecular beam epitaxy. Here, we report the structural and magnetic properties of Mn5Ge3 layers grown on Ge substrates using ultrafast-solid phase epitaxy (SPE) method. We investigate the influence of the substrate orientation, Mn layer thickness and annealing parameters on the crystallographic orientation and magnetization of Mn5Ge3. It is shown that after millisecond range SPE, Mn5Ge3 films always have a preferred (100) orientation whether grown on Ge (001) or (111) substrates, which determines the orientation of the magnetization easy axis lying in the film plane along c axis independent of the layer thickness. The Curie temperature of Mn5Ge3 weakly depends on fabrication parameters.</abstract>
    <parentTitle language="eng">Semiconductor Science and Technology</parentTitle>
    <identifier type="url">https://iopscience.iop.org/article/10.1088/1361-6641/ac6689</identifier>
    <identifier type="doi">10.1088/1361-6641/ac6689</identifier>
    <identifier type="issn">1361-6641</identifier>
    <enrichment key="BTU">nicht an der BTU erstellt / not created at BTU</enrichment>
    <enrichment key="Artikelnummer">065009</enrichment>
    <enrichment key="opus.source">publish</enrichment>
    <author>
      <firstName>Yufang</firstName>
      <lastName>Xie</lastName>
    </author>
    <submitter>
      <firstName>Katrin</firstName>
      <lastName>Gregor</lastName>
    </submitter>
    <author>
      <firstName>Zichao</firstName>
      <lastName>Li</lastName>
    </author>
    <author>
      <firstName>Viktor</firstName>
      <lastName>Begeza</lastName>
    </author>
    <author>
      <firstName>Hannes S.</firstName>
      <lastName>Funk</lastName>
    </author>
    <author>
      <firstName>Inga Anita</firstName>
      <lastName>Fischer</lastName>
    </author>
    <author>
      <firstName>Yu-Jia</firstName>
      <lastName>Zeng</lastName>
    </author>
    <author>
      <firstName>Manfred</firstName>
      <lastName>Helm</lastName>
    </author>
    <author>
      <firstName>Shengqiang</firstName>
      <lastName>Zhou</lastName>
    </author>
    <author>
      <firstName>Slawomir</firstName>
      <lastName>Prucnal</lastName>
    </author>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>solid phase epitaxy</value>
    </subject>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>flash lamp annealing</value>
    </subject>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>ferromagnetic film</value>
    </subject>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>spintronic</value>
    </subject>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>fabrication parameter</value>
    </subject>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>structural property</value>
    </subject>
    <collection role="institutes" number="1504">FG Experimentalphysik und funktionale Materialien</collection>
  </doc>
  <doc>
    <id>29047</id>
    <completedYear/>
    <publishedYear>2022</publishedYear>
    <thesisYearAccepted/>
    <language>eng</language>
    <pageFirst>050901-1</pageFirst>
    <pageLast>050901-20</pageLast>
    <pageNumber/>
    <edition/>
    <issue>5</issue>
    <volume>7</volume>
    <type>articler</type>
    <publisherName/>
    <publisherPlace/>
    <creatingCorporation/>
    <contributingCorporation/>
    <belongsToBibliography>0</belongsToBibliography>
    <completedDate>2022-06-29</completedDate>
    <publishedDate>--</publishedDate>
    <thesisDateAccepted>--</thesisDateAccepted>
    <title language="eng">On-chip infrared photonics with Si-Ge-heterostructures: What is next?</title>
    <abstract language="eng">The integration of Ge on Si for photonics applications has reached a high level of maturity: Ge photodetectors are available on the Si platform in foundry processes, and Si/Ge heterostructure multiple quantum-well photodiodes are rapidly progressing toward applications in light modulation. These successes result from decades of development of high-quality material growth and integration, which, more recently, has sparked an increasingly broad field of photonic device research based on Si/Ge heterostructures that extends from quantum cascade lasers to sensors. Here, we highlight selected recent structure and device developments as well as possible future trends that are enabled by the maturity of the SiGe material platform</abstract>
    <parentTitle language="eng">APL Photonics</parentTitle>
    <identifier type="url">https://aip.scitation.org/doi/10.1063/5.0078608</identifier>
    <identifier type="doi">10.1063/5.0078608</identifier>
    <identifier type="issn">2378-0967</identifier>
    <enrichment key="BTU">an der BTU erstellt / created at BTU</enrichment>
    <enrichment key="Artikelnummer">050901</enrichment>
    <enrichment key="opus.source">publish</enrichment>
    <enrichment key="opus.doi.autoCreate">false</enrichment>
    <enrichment key="opus.urn.autoCreate">false</enrichment>
    <enrichment key="Fprofil">4 Künstliche Intelligenz und Sensorik / Artificial Intelligence and Sensor Technology</enrichment>
    <author>
      <firstName>Inga Anita</firstName>
      <lastName>Fischer</lastName>
    </author>
    <submitter>
      <firstName>Katrin</firstName>
      <lastName>Gregor</lastName>
    </submitter>
    <author>
      <firstName>Moritz</firstName>
      <lastName>Brehm</lastName>
    </author>
    <author>
      <firstName>Monica</firstName>
      <lastName>De Seta</lastName>
    </author>
    <author>
      <firstName>Giovanni</firstName>
      <lastName>Isella</lastName>
    </author>
    <author>
      <firstName>Douglas J.</firstName>
      <lastName>Paul</lastName>
    </author>
    <author>
      <firstName>Michele</firstName>
      <lastName>Virgilio</lastName>
    </author>
    <author>
      <firstName>Giovanni</firstName>
      <lastName>Capellini</lastName>
    </author>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>Heterostructures</value>
    </subject>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>Photodetectors</value>
    </subject>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>Photonics</value>
    </subject>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>Nanowires</value>
    </subject>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>Plasmonics</value>
    </subject>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>Epitaxy</value>
    </subject>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>Quantum wells</value>
    </subject>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>Lasers</value>
    </subject>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>Sensors</value>
    </subject>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>Electronic band structure</value>
    </subject>
    <collection role="institutes" number="1504">FG Experimentalphysik und funktionale Materialien</collection>
  </doc>
  <doc>
    <id>29346</id>
    <completedYear/>
    <publishedYear>2022</publishedYear>
    <thesisYearAccepted/>
    <language>eng</language>
    <pageFirst>35</pageFirst>
    <pageLast>46</pageLast>
    <pageNumber/>
    <edition/>
    <issue>4</issue>
    <volume>109</volume>
    <type>articler</type>
    <publisherName/>
    <publisherPlace/>
    <creatingCorporation/>
    <contributingCorporation/>
    <belongsToBibliography>0</belongsToBibliography>
    <completedDate>2022-10-04</completedDate>
    <publishedDate>--</publishedDate>
    <thesisDateAccepted>--</thesisDateAccepted>
    <title language="eng">Integration Aspects of Plasmonic TiN-based Nano-Hole-Arrays on Ge Photodetectorsin a 200mm Wafer CMOS Compatible Silicon Technology</title>
    <abstract language="eng">In this work we present the progress in regard to the integration of a surface plasmon resonance refractive index sensor into a CMOS compatible 200 mm wafer silicon-based technology. Our approach pursues the combination of germanium photodetectors with metallic nanohole arrays. The paper is focused on the technology development to fabricate large area photodetectors based on a modern design concept. In a first iteration we achieved a leakage current density of 82 mA/cm2 at reverse bias of 0.5 V and a maximum optical responsivity of 0.103 A/W measured with TE polarized light at λ = 1310 nm and a reversed bias of 1 V. For the realization of nanohole arrays we used thin Titanium nitride (TiN) layers deposited by a sputtering process. We were able to produce very homogenous TiN layers with a thickness deviation of around 10 % and RMS of 1.413 nm for 150 nm thick TiN layers.</abstract>
    <parentTitle language="eng">ECS Transactions</parentTitle>
    <identifier type="issn">1938-5862</identifier>
    <identifier type="doi">10.1149/10904.0035ecst</identifier>
    <enrichment key="BTU">an der BTU erstellt / created at BTU</enrichment>
    <enrichment key="opus.source">publish</enrichment>
    <enrichment key="Fprofil">4 Künstliche Intelligenz und Sensorik / Artificial Intelligence and Sensor Technology</enrichment>
    <author>
      <firstName>Christian</firstName>
      <lastName>Mai</lastName>
    </author>
    <submitter>
      <firstName>Christian</firstName>
      <lastName>Wenger</lastName>
    </submitter>
    <author>
      <firstName>Steffen</firstName>
      <lastName>Marschmeyer</lastName>
    </author>
    <author>
      <firstName>Anna</firstName>
      <lastName>Peczek</lastName>
    </author>
    <author>
      <firstName>Aleksandra</firstName>
      <lastName>Kroh</lastName>
    </author>
    <author>
      <firstName>Josmy</firstName>
      <lastName>Jose</lastName>
    </author>
    <author>
      <firstName>Sebastian</firstName>
      <lastName>Reiter</lastName>
    </author>
    <author>
      <firstName>Inga Anita</firstName>
      <lastName>Fischer</lastName>
    </author>
    <author>
      <firstName>Christian</firstName>
      <lastName>Wenger</lastName>
    </author>
    <author>
      <firstName>Andreas</firstName>
      <lastName>Mai</lastName>
    </author>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>plasmonics</value>
    </subject>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>nanohole array</value>
    </subject>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>germanium detector</value>
    </subject>
    <collection role="institutes" number="1504">FG Experimentalphysik und funktionale Materialien</collection>
    <collection role="institutes" number="1521">FG Halbleitermaterialien</collection>
  </doc>
  <doc>
    <id>29843</id>
    <completedYear/>
    <publishedYear>2022</publishedYear>
    <thesisYearAccepted/>
    <language>eng</language>
    <pageFirst/>
    <pageLast/>
    <pageNumber/>
    <edition/>
    <issue>5</issue>
    <volume>35</volume>
    <type>articler</type>
    <publisherName/>
    <publisherPlace/>
    <creatingCorporation/>
    <contributingCorporation/>
    <belongsToBibliography>0</belongsToBibliography>
    <completedDate>2023-01-02</completedDate>
    <publishedDate>--</publishedDate>
    <thesisDateAccepted>--</thesisDateAccepted>
    <title language="eng">Band-gap and strain engineering in GeSn alloys using post-growth pulsed laser melting</title>
    <parentTitle language="eng">Journal of Physics: Condensed Matter</parentTitle>
    <identifier type="doi">10.1088/1361-648X/aca3ea</identifier>
    <identifier type="issn">1361-648X</identifier>
    <enrichment key="BTU">an der BTU erstellt / created at BTU</enrichment>
    <enrichment key="Artikelnummer">055302</enrichment>
    <enrichment key="opus.source">publish</enrichment>
    <enrichment key="Fprofil">4 Künstliche Intelligenz und Sensorik / Artificial Intelligence and Sensor Technology</enrichment>
    <author>
      <firstName>Oliver</firstName>
      <lastName>Steuer</lastName>
    </author>
    <submitter>
      <firstName>Marion</firstName>
      <lastName>Tülling</lastName>
    </submitter>
    <author>
      <firstName>Daniel</firstName>
      <lastName>Schwarz</lastName>
    </author>
    <author>
      <firstName>Michael</firstName>
      <lastName>Oehme</lastName>
    </author>
    <author>
      <firstName>J.</firstName>
      <lastName>Schulze</lastName>
    </author>
    <author>
      <firstName>H.</firstName>
      <lastName>Maczko</lastName>
    </author>
    <author>
      <firstName>Robert</firstName>
      <lastName>Kudrawiec</lastName>
    </author>
    <author>
      <firstName>Inga Anita</firstName>
      <lastName>Fischer</lastName>
    </author>
    <author>
      <firstName>R.</firstName>
      <lastName>Heller</lastName>
    </author>
    <author>
      <firstName>R.</firstName>
      <lastName>Hübner</lastName>
    </author>
    <author>
      <firstName>M. M.</firstName>
      <lastName>Khan</lastName>
    </author>
    <author>
      <firstName>Yordan M.</firstName>
      <lastName>Georgiev</lastName>
    </author>
    <author>
      <firstName>Shengqiang</firstName>
      <lastName>Zhou</lastName>
    </author>
    <author>
      <firstName>M.</firstName>
      <lastName>Helm</lastName>
    </author>
    <author>
      <firstName>Slawomir</firstName>
      <lastName>Prucnal</lastName>
    </author>
    <collection role="institutes" number="1504">FG Experimentalphysik und funktionale Materialien</collection>
  </doc>
  <doc>
    <id>32826</id>
    <completedYear/>
    <publishedYear>2024</publishedYear>
    <thesisYearAccepted/>
    <language>eng</language>
    <pageFirst/>
    <pageLast/>
    <pageNumber/>
    <edition/>
    <issue>2</issue>
    <volume>14</volume>
    <type>articler</type>
    <publisherName/>
    <publisherPlace/>
    <creatingCorporation/>
    <contributingCorporation/>
    <belongsToBibliography>0</belongsToBibliography>
    <completedDate>2024-02-09</completedDate>
    <publishedDate>--</publishedDate>
    <thesisDateAccepted>--</thesisDateAccepted>
    <title language="eng">Deposition of Polymers on Titanium Nitride Electrodes</title>
    <abstract language="eng">The application of titanium nitride (TiN) as an electrode for electrochemical deposition or characterization requires the removal of an insulating layer from its surface. This process was studied and optimized, and the conditions for the complete removal of this layer through treatment with oxalic acid were formulated. The obtained TiN surfaces were used for the deposition of various conducting and non-conducting polymers. Two different approaches were applied: (i) in situ electrochemical synthesis of the main classes of conducting polymers, including polyaniline, polypyrrole, polythiophene, and selected derivatives thereof, and (ii) electrostatically driven layer-by-layer (LbL) deposition of multilayers of oppositely charged polyelectrolytes. The deposited polymers were characterized by electrochemical methods. The electrochemical properties of the deposited conducting polymers and their deposition on the TiN surface were comparable to those of the metallic electrodes. The films produced via LbL deposition exhibited a pronounced influence of the charge of the last deposited polymer on the redox reaction of ferri/ferrocyanide, validating the charge alteration with each successive polymer layer deposition. The studied deposition technologies can be used for the modification of TiN surfaces required in applications of this material in chemical sensors and other devices.</abstract>
    <parentTitle language="eng">Coatings</parentTitle>
    <identifier type="doi">10.3390/coatings14020215</identifier>
    <identifier type="issn">2079-6412</identifier>
    <enrichment key="BTU">an der BTU erstellt / created at BTU</enrichment>
    <enrichment key="opus.source">publish</enrichment>
    <enrichment key="Artikelnummer">215</enrichment>
    <enrichment key="Publikationsweg">Open Access</enrichment>
    <enrichment key="Fprofil">2 Gesundheit und Lifes Sciences / Health and Life Sciences</enrichment>
    <enrichment key="Fprofil">4 Künstliche Intelligenz und Sensorik / Artificial Intelligence and Sensor Technology</enrichment>
    <author>
      <firstName>Yulia</firstName>
      <lastName>Efremenko</lastName>
    </author>
    <submitter>
      <firstName>Marion</firstName>
      <lastName>Tülling</lastName>
    </submitter>
    <author>
      <firstName>Arwa</firstName>
      <lastName>Laroussi</lastName>
    </author>
    <author>
      <firstName>Akant</firstName>
      <lastName>Sengül</lastName>
    </author>
    <author>
      <firstName>Agnieszka Anna</firstName>
      <lastName>Corley-Wiciak</lastName>
    </author>
    <author>
      <firstName>Inga Anita</firstName>
      <lastName>Fischer</lastName>
    </author>
    <author>
      <firstName>Vladimir M.</firstName>
      <lastName>Mirsky</lastName>
    </author>
    <collection role="institutes" number="1504">FG Experimentalphysik und funktionale Materialien</collection>
    <collection role="institutes" number="2108">FG Nanobiotechnologie</collection>
  </doc>
  <doc>
    <id>33449</id>
    <completedYear/>
    <publishedYear>2024</publishedYear>
    <thesisYearAccepted/>
    <language>eng</language>
    <pageFirst>3142</pageFirst>
    <pageLast>3149</pageLast>
    <pageNumber/>
    <edition/>
    <issue>10</issue>
    <volume>24</volume>
    <type>articler</type>
    <publisherName/>
    <publisherPlace/>
    <creatingCorporation/>
    <contributingCorporation/>
    <belongsToBibliography>0</belongsToBibliography>
    <completedDate>2024-03-13</completedDate>
    <publishedDate>--</publishedDate>
    <thesisDateAccepted>--</thesisDateAccepted>
    <title language="eng">Strong Optical Coupling of Lattice Resonances in a Top-down Fabricated Hybrid Metal–Dielectric Al/Si/Ge Metasurface</title>
    <abstract language="eng">Optical metasurfaces enable the manipulation of the light–matter interaction in ultrathin layers. Compared with their metal or dielectric counterparts, hybrid metasurfaces resulting from the combination of dielectric and metallic nanostructures can offer increased possibilities for interactions between modes present in the system. Here, we investigate the interaction between lattice resonances in a hybrid metal–dielectric metasurface obtained from a single-step nanofabrication process. Finite-difference time domain simulations show the avoided crossing of the modes appearing in the wavelength-dependent absorptance inside the Ge upon variations in a selected geometry parameter as evidence for strong optical coupling. We find good agreement between the measured and simulated absorptance and reflectance spectra. Our metasurface design can be easily incorporated into a top-down optoelectronic device fabrication process with possible applications ranging from on-chip spectroscopy to sensing.</abstract>
    <parentTitle language="eng">Nano Letters</parentTitle>
    <identifier type="issn">1530-6984</identifier>
    <identifier type="issn">1530-6992</identifier>
    <identifier type="doi">10.1021/acs.nanolett.3c05050</identifier>
    <enrichment key="opus.import.date">2024-04-26T21:00:36+00:00</enrichment>
    <enrichment key="opus.source">sword</enrichment>
    <enrichment key="opus.import.user">deepgreen</enrichment>
    <enrichment key="opus.import.file">attachment; filename=deposit.zip</enrichment>
    <enrichment key="opus.import.checksum">d8003c12f236ce2bb0460354fc869b0a</enrichment>
    <enrichment key="BTU">an der BTU erstellt / created at BTU</enrichment>
    <enrichment key="Publikationsweg">Open Access</enrichment>
    <enrichment key="opus.doi.autoCreate">false</enrichment>
    <enrichment key="opus.urn.autoCreate">false</enrichment>
    <enrichment key="Fprofil">4 Künstliche Intelligenz und Sensorik / Artificial Intelligence and Sensor Technology</enrichment>
    <author>
      <firstName>Paul</firstName>
      <lastName>Oleynik</lastName>
    </author>
    <author>
      <firstName>Fritz</firstName>
      <lastName>Berkmann</lastName>
    </author>
    <author>
      <firstName>Sebastian</firstName>
      <lastName>Reiter</lastName>
    </author>
    <author>
      <firstName>Jon</firstName>
      <lastName>Schlipf</lastName>
    </author>
    <author>
      <firstName>Markus</firstName>
      <lastName>Ratzke</lastName>
    </author>
    <author>
      <firstName>Yuji</firstName>
      <lastName>Yamamoto</lastName>
    </author>
    <author>
      <firstName>Inga Anita</firstName>
      <lastName>Fischer</lastName>
    </author>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>metamaterials</value>
    </subject>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>semiconductors</value>
    </subject>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>hybridization</value>
    </subject>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>optoelectronics</value>
    </subject>
    <collection role="institutes" number="1504">FG Experimentalphysik und funktionale Materialien</collection>
    <collection role="Import" number="import">Import</collection>
  </doc>
  <doc>
    <id>33138</id>
    <completedYear/>
    <publishedYear>2024</publishedYear>
    <thesisYearAccepted/>
    <language>eng</language>
    <pageFirst/>
    <pageLast/>
    <pageNumber/>
    <edition/>
    <issue/>
    <volume/>
    <type>conferenceobject_noref</type>
    <publisherName>Deutsche Physikalische Gesellschaft</publisherName>
    <publisherPlace>Bad Honnef</publisherPlace>
    <creatingCorporation/>
    <contributingCorporation/>
    <belongsToBibliography>0</belongsToBibliography>
    <completedDate>2024-04-02</completedDate>
    <publishedDate>--</publishedDate>
    <thesisDateAccepted>--</thesisDateAccepted>
    <title language="eng">Deposition of reduced ceria thin films by reactive magnetron sputtering for the development of a resistive gas sensor</title>
    <abstract language="eng">The use of cerium oxide for hydrogen sensing is limited by the low electrical conductivity of layers deposited from a ceria target. To increase the electrical conductivity, partially reduced cerium oxide layers were obtained from a metallic cerium target by reactive magnetron sputtering. The proportions of the oxidation states Ce3+, present in reduced species, and Ce4+, present in fully oxidized species, were determined by ex-situ XPS. For electrical characterization, films were deposited on planarized tungsten finger electrodes. IV curves were measured over several days to investigate possible influences of oxygen and humidity on electrical conductivity. The morphological stability of the layers under ambient conditions was investigated by microscopical methods. The XPS results show a significant amount of Ce3+ in the layers. The electrical conductivity of as-grown samples is several orders of magnitude higher than that of samples grown from a ceria target. However, the conductivity decreases over time, indicating an oxidation of the layers. The surface morphology of the samples was found to be changing drastically within days, leading to partial delamination.</abstract>
    <parentTitle language="eng">Verhandlungen der DPG, Berlin 2024</parentTitle>
    <identifier type="issn">0420-0195</identifier>
    <identifier type="url">https://www.dpg-verhandlungen.de/year/2024/conference/berlin/part/ds/session/11/contribution/18</identifier>
    <enrichment key="UBICOseries">Verhandlungen der DPG</enrichment>
    <enrichment key="BTU">an der BTU erstellt / created at BTU</enrichment>
    <enrichment key="opus.source">publish</enrichment>
    <enrichment key="opus.doi.autoCreate">false</enrichment>
    <enrichment key="opus.urn.autoCreate">false</enrichment>
    <enrichment key="Fprofil">1 Energiewende und Dekarbonisierung / Energy Transition and Decarbonisation</enrichment>
    <enrichment key="Fprofil">4 Künstliche Intelligenz und Sensorik / Artificial Intelligence and Sensor Technology</enrichment>
    <author>
      <firstName>Paul-G.</firstName>
      <lastName>Nitsch</lastName>
    </author>
    <submitter>
      <firstName>Karsten</firstName>
      <lastName>Henkel</lastName>
    </submitter>
    <author>
      <firstName>Markus</firstName>
      <lastName>Ratzke</lastName>
    </author>
    <author>
      <firstName>Emilia</firstName>
      <lastName>Pozarowska</lastName>
    </author>
    <author>
      <firstName>Jan Ingo</firstName>
      <lastName>Flege</lastName>
    </author>
    <author>
      <firstName>Carlos</firstName>
      <lastName>Alvarado Chavarin</lastName>
    </author>
    <author>
      <firstName>Christian</firstName>
      <lastName>Wenger</lastName>
    </author>
    <author>
      <firstName>Inga Anita</firstName>
      <lastName>Fischer</lastName>
    </author>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>ceria</value>
    </subject>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>metalic cerium target</value>
    </subject>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>electrical conductivity</value>
    </subject>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>X-ray photoelectron spectroscopy (XPS)</value>
    </subject>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>oxidation states</value>
    </subject>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>morphology</value>
    </subject>
    <collection role="institutes" number="1503">FG Angewandte Physik und Halbleiterspektroskopie</collection>
    <collection role="institutes" number="1504">FG Experimentalphysik und funktionale Materialien</collection>
  </doc>
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