<?xml version="1.0" encoding="utf-8"?>
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  <doc>
    <id>24810</id>
    <completedYear/>
    <publishedYear>2019</publishedYear>
    <thesisYearAccepted/>
    <language>eng</language>
    <pageFirst>240</pageFirst>
    <pageLast>242</pageLast>
    <pageNumber/>
    <edition/>
    <issue/>
    <volume/>
    <type>conferenceobject_ref</type>
    <publisherName/>
    <publisherPlace>Paris, France</publisherPlace>
    <creatingCorporation/>
    <contributingCorporation/>
    <belongsToBibliography>0</belongsToBibliography>
    <completedDate>2019-12-03</completedDate>
    <publishedDate>--</publishedDate>
    <thesisDateAccepted>--</thesisDateAccepted>
    <title language="eng">Limiting the Output Power of Rugged GaN LNAs</title>
    <abstract language="eng">Rugged GaN HEMT low-noise amplifiers are well established, but the common concept of achieving ruggedness by applying the gate supply voltage through a high ohmic resistance might not be sufficient in addition to control the maximum output power. This paper shifts the focus to the protection of subsequent stages and proposes a circuit concept based on an output attenuator and an adaptive drain supply. It is shown that the concept implementation provides an attenuation of up to 28dB under input overdrive condition while leaving small-signal noise Figure unaffected.</abstract>
    <parentTitle language="eng">14th European Microwave Integrated Circuits Conference (EuMIC)</parentTitle>
    <identifier type="doi">10.23919/EuMIC.2019.8909653</identifier>
    <identifier type="isbn">978-2-87487-056-9</identifier>
    <identifier type="isbn">978-1-7281-0768-4</identifier>
    <enrichment key="BTU">an der BTU erstellt / created at BTU</enrichment>
    <author>
      <firstName>Evelyne</firstName>
      <lastName>Kaule</lastName>
    </author>
    <submitter>
      <firstName>Kerstin</firstName>
      <lastName>Röhl</lastName>
    </submitter>
    <author>
      <firstName>Cristina</firstName>
      <lastName>Andrei</lastName>
    </author>
    <author>
      <firstName>Stefan</firstName>
      <lastName>Gerlich</lastName>
    </author>
    <author>
      <firstName>Ralf</firstName>
      <lastName>Dörner</lastName>
    </author>
    <author>
      <firstName>Matthias</firstName>
      <lastName>Rudolph</lastName>
    </author>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>Power generation; Logic Gates; Gallium nitride; Attenuators; HEMTs; Printed circuits; Power measurement; Limit; GaN; HEMT; ruggedness; low noise amplifier (LNA); receiver</value>
    </subject>
    <collection role="institutes" number="1121">Stiftungsprofessur Hochfrequenz- und Mikrowellentechnik</collection>
    <collection role="institutes" number="1581">FG Schaltkreisentwurf</collection>
  </doc>
  <doc>
    <id>24811</id>
    <completedYear/>
    <publishedYear>2019</publishedYear>
    <thesisYearAccepted/>
    <language>eng</language>
    <pageFirst>794</pageFirst>
    <pageLast>796</pageLast>
    <pageNumber/>
    <edition/>
    <issue/>
    <volume/>
    <type>conferenceobject_ref</type>
    <publisherName/>
    <publisherPlace>Paris, France</publisherPlace>
    <creatingCorporation/>
    <contributingCorporation/>
    <belongsToBibliography>0</belongsToBibliography>
    <completedDate>2019-12-03</completedDate>
    <publishedDate>--</publishedDate>
    <thesisDateAccepted>--</thesisDateAccepted>
    <title language="eng">Limiting the Output Power of Rugged GaN LNAs</title>
    <abstract language="eng">Rugged GaN HEMT low-noise amplifiers are well established, but the common concept of achieving ruggedness by applying the gate supply voltage through a high ohmic resistance might not be sufficient in addition to control the maximum output power. This paper shifts the focus to the protection of subsequent stages and proposes a circuit concept based on an output attenuator and an adaptive drain supply. It is shown that the concept implementation provides an attenuation of up to 28 dB under input overdrive condition while leaving small-signal noise figure unaffected.</abstract>
    <parentTitle language="eng">Proceedings of 49th European Microwave Conference (EuMC)</parentTitle>
    <identifier type="doi">10.23919/EuMC.2019.8910675</identifier>
    <identifier type="isbn">978-2-87487-055-2</identifier>
    <identifier type="isbn">978-1-7281-1798-0</identifier>
    <enrichment key="BTU">an der BTU erstellt / created at BTU</enrichment>
    <author>
      <firstName>Evelyne</firstName>
      <lastName>Kaule</lastName>
    </author>
    <submitter>
      <firstName>Kerstin</firstName>
      <lastName>Röhl</lastName>
    </submitter>
    <author>
      <firstName>Cristina</firstName>
      <lastName>Andrei</lastName>
    </author>
    <author>
      <firstName>Stefan</firstName>
      <lastName>Gerlich</lastName>
    </author>
    <author>
      <firstName>Ralf</firstName>
      <lastName>Dörner</lastName>
    </author>
    <author>
      <firstName>Matthias</firstName>
      <lastName>Rudolph</lastName>
    </author>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>Power generation; Logic Gates; Gallium nitride; Attenuators; HEMTs; Printed circuits; Power measurement; Limit; GaN; HEMT; ruggedness; low noise amplifier (LNA); receiver</value>
    </subject>
    <collection role="institutes" number="1121">Stiftungsprofessur Hochfrequenz- und Mikrowellentechnik</collection>
    <collection role="institutes" number="1581">FG Schaltkreisentwurf</collection>
  </doc>
</export-example>
