<?xml version="1.0" encoding="utf-8"?>
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  <doc>
    <id>9356</id>
    <completedYear/>
    <publishedYear>2012</publishedYear>
    <thesisYearAccepted/>
    <language>eng</language>
    <pageFirst>043506</pageFirst>
    <pageLast>043511</pageLast>
    <pageNumber/>
    <edition/>
    <issue>4</issue>
    <volume>112</volume>
    <type>articler</type>
    <publisherName/>
    <publisherPlace/>
    <creatingCorporation/>
    <contributingCorporation/>
    <belongsToBibliography>0</belongsToBibliography>
    <completedDate>2013-08-30</completedDate>
    <publishedDate>--</publishedDate>
    <thesisDateAccepted>--</thesisDateAccepted>
    <title language="eng">In-operando and non-destructive analysis of the resistive switching in the Ti/HfO2/TiN-based system by Hard X-ray Photoelectron Spectroscopy</title>
    <parentTitle language="eng">Applied Physics Letters</parentTitle>
    <enrichment key="BTU">an der BTU erstellt / created at BTU</enrichment>
    <author>
      <firstName>Thomas</firstName>
      <lastName>Bertaud</lastName>
    </author>
    <submitter>
      <firstName>Marion</firstName>
      <lastName>Borrmann</lastName>
    </submitter>
    <author>
      <firstName>Małgorzata</firstName>
      <lastName>Sowinska</lastName>
    </author>
    <author>
      <firstName>Damian</firstName>
      <lastName>Walczyk</lastName>
    </author>
    <author>
      <firstName>Sebastian</firstName>
      <lastName>Thiess</lastName>
    </author>
    <author>
      <firstName>Christian</firstName>
      <lastName>Walczyk</lastName>
    </author>
    <author>
      <firstName>A.</firstName>
      <lastName>Gloskovski</lastName>
    </author>
    <author>
      <firstName>W.</firstName>
      <lastName>Drube</lastName>
    </author>
    <author>
      <firstName>Thomas</firstName>
      <lastName>Schroeder</lastName>
    </author>
    <collection role="old_institute" number="01050">LS Halbleitermaterialien</collection>
    <collection role="institutes" number="1521">FG Halbleitermaterialien</collection>
  </doc>
  <doc>
    <id>9332</id>
    <completedYear/>
    <publishedYear>2012</publishedYear>
    <thesisYearAccepted/>
    <language>eng</language>
    <pageFirst>233509</pageFirst>
    <pageLast>233514</pageLast>
    <pageNumber/>
    <edition/>
    <issue>23</issue>
    <volume>100</volume>
    <type>articler</type>
    <publisherName/>
    <publisherPlace/>
    <creatingCorporation/>
    <contributingCorporation/>
    <belongsToBibliography>0</belongsToBibliography>
    <completedDate>2013-08-29</completedDate>
    <publishedDate>--</publishedDate>
    <thesisDateAccepted>--</thesisDateAccepted>
    <title language="eng">Hard X-ray Photoelectron Spectroscopy study of the electroforming in Ti/HfO2-based resistive switching structures</title>
    <parentTitle language="eng">Applied Physics Letters</parentTitle>
    <identifier type="issn">0003-6951</identifier>
    <enrichment key="BTU">an der BTU erstellt / created at BTU</enrichment>
    <author>
      <firstName>Małgorzata</firstName>
      <lastName>Sowinska</lastName>
    </author>
    <submitter>
      <firstName>Marion</firstName>
      <lastName>Borrmann</lastName>
    </submitter>
    <author>
      <firstName>Thomas</firstName>
      <lastName>Bertaud</lastName>
    </author>
    <author>
      <firstName>Damian</firstName>
      <lastName>Walczyk</lastName>
    </author>
    <author>
      <firstName>Sebastian</firstName>
      <lastName>Thiess</lastName>
    </author>
    <author>
      <firstName>Markus Andreas</firstName>
      <lastName>Schubert</lastName>
    </author>
    <author>
      <firstName>Mindaugas</firstName>
      <lastName>Lukosius</lastName>
    </author>
    <author>
      <firstName>W.</firstName>
      <lastName>Drube</lastName>
    </author>
    <author>
      <firstName>Christian</firstName>
      <lastName>Walczyk</lastName>
    </author>
    <author>
      <firstName>Thomas</firstName>
      <lastName>Schröder</lastName>
    </author>
    <collection role="old_institute" number="01050">LS Halbleitermaterialien</collection>
    <collection role="institutes" number="1521">FG Halbleitermaterialien</collection>
  </doc>
</export-example>
