<?xml version="1.0" encoding="utf-8"?>
<export-example>
  <doc>
    <id>10105</id>
    <completedYear/>
    <publishedYear>2014</publishedYear>
    <thesisYearAccepted/>
    <language>eng</language>
    <pageFirst>N3016</pageFirst>
    <pageLast>N3022</pageLast>
    <pageNumber/>
    <edition/>
    <issue>1</issue>
    <volume>3</volume>
    <type>articler</type>
    <publisherName/>
    <publisherPlace/>
    <creatingCorporation/>
    <contributingCorporation/>
    <belongsToBibliography>0</belongsToBibliography>
    <completedDate>2013-11-25</completedDate>
    <publishedDate>--</publishedDate>
    <thesisDateAccepted>--</thesisDateAccepted>
    <title language="eng">Study of InP Surfaces after Wet Chemical Treatments</title>
    <abstract language="eng">The influence of different wet chemical treatments (HCl, H₂SO₄, NH₄OH) on the composition of InP surfaces is studied by using synchrotron radiation photoemission spectroscopy (SRPES). It is shown that a significant amount of oxide remains present after immersion in a NH₄OH solution which is ascribed to the insolubility of In³⁺ at higher pH values. Acidic treatments efficiently remove the native oxide, although components like Pᴼ, Inᴼ and P(2±Δ)+ suboxides are observed. Alternatively, the influence of a passivation step in (NH₄)₂S solution on the surface composition was investigated. The InP surface after immersion into (NH₄)₂S results in fewer surface components, without detection of Pᴼ and P(2±Δ)+ suboxides. Finally, slight etching of InP surfaces in HCl/H₂O₂ solution followed by a native oxide removal step, showed no significant effect on the surface composition.</abstract>
    <parentTitle language="eng">ECS Journal of Solid State Science and Technology</parentTitle>
    <identifier type="doi">10.1149/2.005401jss</identifier>
    <identifier type="issn">2162-8777</identifier>
    <identifier type="issn">2162-8769</identifier>
    <enrichment key="BTU">an der BTU erstellt / created at BTU</enrichment>
    <author>
      <firstName>Daniel</firstName>
      <lastName>Cuypers</lastName>
    </author>
    <submitter>
      <firstName>Karsten</firstName>
      <lastName>Henkel</lastName>
    </submitter>
    <author>
      <firstName>Dennis H. von</firstName>
      <lastName>Dorp</lastName>
    </author>
    <author>
      <firstName>Massimo</firstName>
      <lastName>Tallarida</lastName>
    </author>
    <author>
      <firstName>Simone</firstName>
      <lastName>Brizzi</lastName>
    </author>
    <author>
      <firstName>Thierry</firstName>
      <lastName>Conard</lastName>
    </author>
    <author>
      <firstName>Leonard</firstName>
      <lastName>Rodriguez</lastName>
    </author>
    <author>
      <firstName>M.</firstName>
      <lastName>Mees</lastName>
    </author>
    <author>
      <firstName>Sophia</firstName>
      <lastName>Arnauts</lastName>
    </author>
    <author>
      <firstName>Dieter</firstName>
      <lastName>Schmeißer</lastName>
    </author>
    <author>
      <firstName>Christoph</firstName>
      <lastName>Adelmann</lastName>
    </author>
    <author>
      <firstName>Stefan</firstName>
      <lastName>De Gendt</lastName>
    </author>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>Synchrotron Radiation Photoelectron Spectroscopy</value>
    </subject>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>Scanning Tunneling Microscopy</value>
    </subject>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>InP</value>
    </subject>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>Wet chemical treatment</value>
    </subject>
    <collection role="old_institute" number="01005">LS Angewandte Physik / Sensorik</collection>
    <collection role="institutes" number="1503">FG Angewandte Physik und Halbleiterspektroskopie</collection>
  </doc>
  <doc>
    <id>10043</id>
    <completedYear/>
    <publishedYear>2014</publishedYear>
    <thesisYearAccepted/>
    <language>eng</language>
    <pageFirst>01A107-1</pageFirst>
    <pageLast>01A107-10</pageLast>
    <pageNumber/>
    <edition/>
    <issue>32</issue>
    <volume>1</volume>
    <type>articler</type>
    <publisherName/>
    <publisherPlace/>
    <creatingCorporation/>
    <contributingCorporation/>
    <belongsToBibliography>0</belongsToBibliography>
    <completedDate>2013-11-19</completedDate>
    <publishedDate>--</publishedDate>
    <thesisDateAccepted>--</thesisDateAccepted>
    <title language="eng">Capacitance and conductance versus voltage characterization of Al2O3 layers prepared by PE-ALD at 25°C ≤ T ≤ 200°C</title>
    <abstract language="eng">In this work, plasma enhanced atomic layer deposited (PE-ALD) samples were prepared at substrate temperatures in the range between room temperature (RT) and 200 °C and investigated by capacitance–voltage and conductance–voltage recordings. The measurements are compared to standard thermal atomic layer deposition (T-ALD) at 200 °C. Very low interface state density (D it) ~1011 eV−1 cm−2 could be achieved for the PE-ALD process at 200 °C substrate temperature after postdeposition anneal (PDA) in forming gas at 450 °C. The PDA works very effectively for both the PE-ALD and T-ALD at 200 °C substrate temperature delivering also similar values of negative fixed charge density (N fix) around −2.5 × 1012 cm−2. At the substrate temperature of 150 °C, highest N fix (−2.9 × 1012 cm−2) and moderate D it (2.7 × 1011 eV−1 cm−2) values were observed. The as deposited PE-ALD layer at RT shows both low D it in the range of (1 to 3) × 1011 eV−1 cm−2 and low N fix (−4.4 × 1011 cm−2) at the same time. The dependencies of N fix, D it, and relative permittivity on the substrate temperatures and its adjustability are discussed.</abstract>
    <parentTitle language="eng">Journal of Vacuum Science and Technology A</parentTitle>
    <identifier type="doi">10.1116/1.4831897</identifier>
    <identifier type="url">http://link.aip.org/link/?JVA/32/01A107&amp;aemail=author</identifier>
    <enrichment key="BTU">an der BTU erstellt / created at BTU</enrichment>
    <author>
      <firstName>Karsten</firstName>
      <lastName>Henkel</lastName>
    </author>
    <submitter>
      <firstName>Karsten</firstName>
      <lastName>Henkel</lastName>
    </submitter>
    <author>
      <firstName>Hassan</firstName>
      <lastName>Gargouri</lastName>
    </author>
    <author>
      <firstName>Bernd</firstName>
      <lastName>Gruska</lastName>
    </author>
    <author>
      <firstName>Michael</firstName>
      <lastName>Arens</lastName>
    </author>
    <author>
      <firstName>Massimo</firstName>
      <lastName>Tallarida</lastName>
    </author>
    <author>
      <firstName>Dieter</firstName>
      <lastName>Schmeißer</lastName>
    </author>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>Atomic layer deposition (ALD)</value>
    </subject>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>Al2O3</value>
    </subject>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>dielectric properties</value>
    </subject>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>interface state density</value>
    </subject>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>fixed oxide charge</value>
    </subject>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>permittivity</value>
    </subject>
    <collection role="old_institute" number="01005">LS Angewandte Physik / Sensorik</collection>
    <collection role="institutes" number="1503">FG Angewandte Physik und Halbleiterspektroskopie</collection>
  </doc>
  <doc>
    <id>10246</id>
    <completedYear/>
    <publishedYear>2014</publishedYear>
    <thesisYearAccepted/>
    <language>eng</language>
    <pageFirst>1</pageFirst>
    <pageLast>6</pageLast>
    <pageNumber/>
    <edition/>
    <issue>Vol. 192</issue>
    <volume/>
    <type>articler</type>
    <publisherName/>
    <publisherPlace/>
    <creatingCorporation/>
    <contributingCorporation/>
    <belongsToBibliography>0</belongsToBibliography>
    <completedDate>2014-01-21</completedDate>
    <publishedDate>--</publishedDate>
    <thesisDateAccepted>--</thesisDateAccepted>
    <title language="eng">Multiple  Auger  processes  in  Graphene</title>
    <abstract language="eng">Resonant Auger decay processes have been studied by resonant photoemission spectroscopy (resPES) and X-ray absorption spectroscopy (XAS) in Graphene systems.  The pi*-resonance is used to identify the degree of localization of the lowest pi*-orbitals in the conduction band. Localization and lifetime of the photo-excited intermediate state cause the formation of multiple Auger processes.  For the Graphene systems we identify two novel Auger decay combinations with a four hole final state: the (S+S) and the(S+S)* decay.  We demonstrate that these  processes are sensitive for interlayer coupling and interactions with the metallic free electrons of the substrate.</abstract>
    <parentTitle language="eng">Journal of Electron Spectroscopy and Related Phenomena</parentTitle>
    <identifier type="doi">10.1016/j.elspec.2013.12.009</identifier>
    <identifier type="issn">0368-2048</identifier>
    <enrichment key="BTU">an der BTU erstellt / created at BTU</enrichment>
    <author>
      <firstName>Matthias</firstName>
      <lastName>Richter</lastName>
    </author>
    <submitter>
      <firstName>Karsten</firstName>
      <lastName>Henkel</lastName>
    </submitter>
    <author>
      <firstName>Ulrich</firstName>
      <lastName>Starke</lastName>
    </author>
    <author>
      <firstName>Dieter</firstName>
      <lastName>Schmeißer</lastName>
    </author>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>Graphene</value>
    </subject>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>X-Ray absorption spectroscopy</value>
    </subject>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>XAS</value>
    </subject>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>resonant photoemission spectroscopy</value>
    </subject>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>resPES</value>
    </subject>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>multiple hole Auger</value>
    </subject>
    <collection role="old_institute" number="01005">LS Angewandte Physik / Sensorik</collection>
    <collection role="institutes" number="1503">FG Angewandte Physik und Halbleiterspektroskopie</collection>
  </doc>
  <doc>
    <id>10247</id>
    <completedYear/>
    <publishedYear>2014</publishedYear>
    <thesisYearAccepted/>
    <language>eng</language>
    <pageFirst>77</pageFirst>
    <pageLast>82</pageLast>
    <pageNumber/>
    <edition/>
    <issue>5</issue>
    <volume/>
    <type>articler</type>
    <publisherName/>
    <publisherPlace/>
    <creatingCorporation/>
    <contributingCorporation/>
    <belongsToBibliography>0</belongsToBibliography>
    <completedDate>2014-01-22</completedDate>
    <publishedDate>--</publishedDate>
    <thesisDateAccepted>--</thesisDateAccepted>
    <title language="eng">Quantum size effects in TiO2 thin films grown by atomic layer deposition</title>
    <abstract language="eng">We study the atomic layer deposition of TiO2 by means of X-ray absorption spectroscopy. The Ti precursor, titanium isopropoxide, was used in combination with H2O on Si/SiO2 substrates that were heated at 200 °C. The low growth rate (0.15 Å/cycle) and the in situ characterization permitted to follow changes in the electronic structure of TiO2 in the sub-nanometer range, which are influenced by quantum size effects. The modified electronic properties may play an important role in charge carrier transport and separation, and increase the efficiency of energy conversion systems.</abstract>
    <parentTitle language="eng">Beilstein Journal of Nanotechnology</parentTitle>
    <identifier type="doi">10.3762/bjnano.5.7</identifier>
    <identifier type="issn">2190-4286</identifier>
    <enrichment key="BTU">an der BTU erstellt / created at BTU</enrichment>
    <author>
      <firstName>Massimo</firstName>
      <lastName>Tallarida</lastName>
    </author>
    <submitter>
      <firstName>Karsten</firstName>
      <lastName>Henkel</lastName>
    </submitter>
    <author>
      <firstName>Chittaranjan</firstName>
      <lastName>Das</lastName>
    </author>
    <author>
      <firstName>Dieter</firstName>
      <lastName>Schmeißer</lastName>
    </author>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>atomic layer deposition (ALD)</value>
    </subject>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>charge transfer multiplet</value>
    </subject>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>covalency</value>
    </subject>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>energy conversion</value>
    </subject>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>quantum size effects</value>
    </subject>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>titanium dioxide (TiO2)</value>
    </subject>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>water splitting</value>
    </subject>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>X-ray absorption spectroscopy (XAS)</value>
    </subject>
    <collection role="old_institute" number="01005">LS Angewandte Physik / Sensorik</collection>
    <collection role="institutes" number="1503">FG Angewandte Physik und Halbleiterspektroskopie</collection>
  </doc>
  <doc>
    <id>10163</id>
    <completedYear/>
    <publishedYear>2014</publishedYear>
    <thesisYearAccepted/>
    <language>eng</language>
    <pageFirst>441</pageFirst>
    <pageLast>446</pageLast>
    <pageNumber/>
    <edition/>
    <issue/>
    <volume>Vol. 56</volume>
    <type>articler</type>
    <publisherName/>
    <publisherPlace/>
    <creatingCorporation/>
    <contributingCorporation/>
    <belongsToBibliography>0</belongsToBibliography>
    <completedDate>2013-12-10</completedDate>
    <publishedDate>--</publishedDate>
    <thesisDateAccepted>--</thesisDateAccepted>
    <title language="eng">Interlayer-exciton mediated three-hole-Auger-decay in the pi-band of highly oriented pyrolytic graphite</title>
    <abstract language="eng">Resonant photoemission spectroscopy(resPES) is used to probe the occupied pi- and unoccupied pi*-bands of&#13;
carbon thin films with particular focus on the Auger decay. Highly Oriented Pyrolytic Graphite (HOPG) is&#13;
studied at the C1s edge. We find strong resonant features at 285.5 eV and 292 eV in the resPES diagram. The normal two-hole Auger decay proceeds under constant kinetic energy (451)only in the sigma*-region. In the pi*-region, however, it proceeds under 67.5° in terms of a Ebind(w) diagram. We attribute this to a multiple Auger decay with a net three hole final state. For this novel decay process we propose a model.We discuss&#13;
the long lifetime of the first resonant excitation and conclude that it arises from the strong excitonic character&#13;
of the first resonant state. We use HOPG as a reference system and suggest that this novel process is a tool to&#13;
identify interlayer–substrate interaction of the carbon layers involved.</abstract>
    <parentTitle language="eng">Physica E</parentTitle>
    <identifier type="doi">10.1016/j.physe.2013.01.015</identifier>
    <identifier type="issn">1386-9477</identifier>
    <enrichment key="BTU">an der BTU erstellt / created at BTU</enrichment>
    <author>
      <firstName>Matthias</firstName>
      <lastName>Richter</lastName>
    </author>
    <submitter>
      <firstName>Karsten</firstName>
      <lastName>Henkel</lastName>
    </submitter>
    <author>
      <firstName>Daniel</firstName>
      <lastName>Friedrich</lastName>
    </author>
    <author>
      <firstName>Dieter</firstName>
      <lastName>Schmeißer</lastName>
    </author>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>resonant excitation</value>
    </subject>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>three hole Auger decay</value>
    </subject>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>X-ray photoelectron spectroscopy</value>
    </subject>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>HOPG</value>
    </subject>
    <collection role="old_institute" number="01005">LS Angewandte Physik / Sensorik</collection>
    <collection role="institutes" number="1503">FG Angewandte Physik und Halbleiterspektroskopie</collection>
  </doc>
  <doc>
    <id>10356</id>
    <completedYear/>
    <publishedYear>2014</publishedYear>
    <thesisYearAccepted/>
    <language>eng</language>
    <pageFirst>53</pageFirst>
    <pageLast>56</pageLast>
    <pageNumber/>
    <edition/>
    <issue>555</issue>
    <volume>2014</volume>
    <type>articler</type>
    <publisherName/>
    <publisherPlace/>
    <creatingCorporation/>
    <contributingCorporation/>
    <belongsToBibliography>0</belongsToBibliography>
    <completedDate>2014-03-03</completedDate>
    <publishedDate>--</publishedDate>
    <thesisDateAccepted>--</thesisDateAccepted>
    <title language="eng">Resonant Photoemission at the O1s threshold to characterize In2O3 single crystals</title>
    <abstract language="eng">We report on spectroscopic investigations on In2O3 single crystals. We focus on the detailed analysis of the O1s resonance profile by resonant photoelectron spectroscopy. We analyze the electronic structure and assign the O2p to build the valence band and both, O2p and In5s5p states to contribute to the conduction band (CB). We determine the partial density of states for the valence and CBs and find a strong hybridization of O2p and In5s states. This is deduced from constant final state spectra on the O-KLL-Auger over the O K-edge and In M4,5-edge and a comparison to the corresponding X-ray absorption spectroscopy data.We also identify several types of defects.&#13;
A broad band of oxygen derived defects is identified that extends throughout the gap. These are attributed to small polarons which cause an anti-resonance in the valence states around the O1s threshold. In addition, a separate Auger decay at resonance indicates the existence of localized charge transfer states which involves localized In5s5p states.</abstract>
    <parentTitle language="eng">Thin Solid Films</parentTitle>
    <identifier type="doi">10.1016/j.tsf.2013.03.036</identifier>
    <identifier type="issn">0040-6090</identifier>
    <identifier type="issn">1879-2731</identifier>
    <enrichment key="BTU">an der BTU erstellt / created at BTU</enrichment>
    <author>
      <firstName>Jörg</firstName>
      <lastName>Haeberle</lastName>
    </author>
    <submitter>
      <firstName>Karsten</firstName>
      <lastName>Henkel</lastName>
    </submitter>
    <author>
      <firstName>Matthias</firstName>
      <lastName>Richter</lastName>
    </author>
    <author>
      <firstName>Zbigniew</firstName>
      <lastName>Galazka</lastName>
    </author>
    <author>
      <firstName>Christoph</firstName>
      <lastName>Janowitz</lastName>
    </author>
    <author>
      <firstName>Dieter</firstName>
      <lastName>Schmeißer</lastName>
    </author>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>In2O3</value>
    </subject>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>TCO</value>
    </subject>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>X-ray spectroscopy</value>
    </subject>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>Small polaron</value>
    </subject>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>Charge transfer</value>
    </subject>
    <collection role="old_institute" number="01005">LS Angewandte Physik / Sensorik</collection>
    <collection role="institutes" number="1503">FG Angewandte Physik und Halbleiterspektroskopie</collection>
  </doc>
  <doc>
    <id>10288</id>
    <completedYear/>
    <publishedYear>2014</publishedYear>
    <thesisYearAccepted/>
    <language>eng</language>
    <pageFirst>2663</pageFirst>
    <pageLast>2670</pageLast>
    <pageNumber/>
    <edition/>
    <issue>8</issue>
    <volume/>
    <type>articler</type>
    <publisherName/>
    <publisherPlace/>
    <creatingCorporation/>
    <contributingCorporation/>
    <belongsToBibliography>0</belongsToBibliography>
    <completedDate>2014-02-11</completedDate>
    <publishedDate>--</publishedDate>
    <thesisDateAccepted>--</thesisDateAccepted>
    <title language="eng">Effect of iron carbide formation on the number of active sites in Fe-N-C catalysts for the oxygen reduction reaction in acidic media</title>
    <parentTitle language="eng">Journals of materials chemistry A</parentTitle>
    <identifier type="doi">10.1039/c3ta13821f</identifier>
    <identifier type="issn">2050-7488</identifier>
    <identifier type="issn">2050-7496</identifier>
    <enrichment key="BTU">an der BTU erstellt / created at BTU</enrichment>
    <author>
      <firstName>Ulrike Ingrid</firstName>
      <lastName>Kramm</lastName>
    </author>
    <submitter>
      <firstName>Karsten</firstName>
      <lastName>Henkel</lastName>
    </submitter>
    <author>
      <firstName>Iris</firstName>
      <lastName>Herrmann-Geppert</lastName>
    </author>
    <author>
      <firstName>Sebastian</firstName>
      <lastName>Fiechter</lastName>
    </author>
    <author>
      <firstName>Gerald</firstName>
      <lastName>Zehl</lastName>
    </author>
    <author>
      <firstName>Ivo</firstName>
      <lastName>Zizak</lastName>
    </author>
    <author>
      <firstName>Iris</firstName>
      <lastName>Dorbandt</lastName>
    </author>
    <author>
      <firstName>Dieter</firstName>
      <lastName>Schmeißer</lastName>
    </author>
    <author>
      <firstName>Peter</firstName>
      <lastName>Bogdanoff</lastName>
    </author>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>Oxygen reduction reaction (ORR)</value>
    </subject>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>Fe-N-C catalyst</value>
    </subject>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>acidic media</value>
    </subject>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>high-temperature X-ray diffraction (HT-XRD)</value>
    </subject>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>thermogravimetry coupled with mass-spectroscopy (TG-MS)</value>
    </subject>
    <collection role="old_institute" number="01005">LS Angewandte Physik / Sensorik</collection>
    <collection role="institutes" number="1503">FG Angewandte Physik und Halbleiterspektroskopie</collection>
  </doc>
  <doc>
    <id>10289</id>
    <completedYear/>
    <publishedYear>2014</publishedYear>
    <thesisYearAccepted/>
    <language>eng</language>
    <pageFirst>978</pageFirst>
    <pageLast>985</pageLast>
    <pageNumber/>
    <edition/>
    <issue>3</issue>
    <volume>136</volume>
    <type>articler</type>
    <publisherName/>
    <publisherPlace/>
    <creatingCorporation/>
    <contributingCorporation/>
    <belongsToBibliography>0</belongsToBibliography>
    <completedDate>2014-02-11</completedDate>
    <publishedDate>--</publishedDate>
    <thesisDateAccepted>--</thesisDateAccepted>
    <title language="eng">Correlations between Mass Activity and Physicochemical Properties of Fe/N/C Catalysts for the ORR in PEM Fuel Cell via 57 Fe Mössbauer Spectroscopy and Other Techniques</title>
    <abstract language="eng">The aim of this work is to clarify the origin of the enhanced PEM-FC performance of catalysts prepared by the procedures described in Science 2009, 324, 71 and Nat. Commun. 2011, 2, 416. Catalysts were characterized after a first heat treatment in argon at 1050 °C (Ar) and a second heat treatment in ammonia at 950 °C (Ar + NH3). For the NC catalysts a variation of the nitrogen precursor was also implemented. 57Fe Mössbauer spectroscopy, X-ray photoelectron spectroscopy, neutron activation analysis, and N2 sorption measurements were used to characterize all catalysts. The results were correlated to the mass activity of these catalysts measured at 0.8 V in H2/O2 PEM-FC. It was found that all catalysts contain the same FeN4-like species already found in INRS Standard (Phys. Chem. Chem. Phys. 2012, 14, 11673). Among all FeN4-like species, only D1 sites, assigned to FeN4/C, and D3, assigned to N-FeN2+2 /C sites, were active for the oxygen reduction reaction (ORR). The difference between INRS Standard and the new catalysts is simply that there are many more D1 and D3 sites available in the new catalysts. All (Ar + NH3)-type catalysts have a much larger porosity than Ar-type catalysts, while the maximum number of their active sites is only slightly larger after a second heat treatment in NH3. The large difference in activity between the Ar-type catalysts and the Ar + NH3 ones stems from the availability of the sites to perform ORR, as many sites of the Ar-type catalysts are secluded in the material, while they are available at the surface of the Ar + NH3-type catalysts.</abstract>
    <parentTitle language="eng">Journal of the American Chemica Society</parentTitle>
    <identifier type="doi">10.1021/ja410076f</identifier>
    <identifier type="issn">0002-7863</identifier>
    <identifier type="issn">1520-5126</identifier>
    <enrichment key="BTU">an der BTU erstellt / created at BTU</enrichment>
    <author>
      <firstName>Ulrike Ingrid</firstName>
      <lastName>Kramm</lastName>
    </author>
    <submitter>
      <firstName>Karsten</firstName>
      <lastName>Henkel</lastName>
    </submitter>
    <author>
      <firstName>Michel</firstName>
      <lastName>Lefèvre</lastName>
    </author>
    <author>
      <firstName>Nicholas</firstName>
      <lastName>Larouche</lastName>
    </author>
    <author>
      <firstName>Dieter</firstName>
      <lastName>Schmeißer</lastName>
    </author>
    <author>
      <firstName>Jean-Pol</firstName>
      <lastName>Dodelet</lastName>
    </author>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>Fe-N-C catalyst</value>
    </subject>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>57 Fe Mössbauer Spectroscopy</value>
    </subject>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>X-ray photo-electron spectroscopy</value>
    </subject>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>neutron activation analysis</value>
    </subject>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>nitrogen sorption measurements</value>
    </subject>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>oxygen reduction reaction (ORR)</value>
    </subject>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>PEM Fuel Cell</value>
    </subject>
    <collection role="old_institute" number="01005">LS Angewandte Physik / Sensorik</collection>
    <collection role="institutes" number="1503">FG Angewandte Physik und Halbleiterspektroskopie</collection>
  </doc>
  <doc>
    <id>10507</id>
    <completedYear/>
    <publishedYear>2014</publishedYear>
    <thesisYearAccepted/>
    <language>eng</language>
    <pageFirst>122906-1</pageFirst>
    <pageLast>122906-4</pageLast>
    <pageNumber/>
    <edition/>
    <issue>104</issue>
    <volume/>
    <type>articler</type>
    <publisherName/>
    <publisherPlace/>
    <creatingCorporation/>
    <contributingCorporation/>
    <belongsToBibliography>0</belongsToBibliography>
    <completedDate>2014-03-31</completedDate>
    <publishedDate>--</publishedDate>
    <thesisDateAccepted>--</thesisDateAccepted>
    <title language="eng">On the scalability of doped hafnia thin films</title>
    <abstract language="eng">The scaling behavior of Gd- and Al-doped HfO2 films as gate dielectrics in metal-oxide-semiconductor (MOS) capacitors was studied. For equivalent oxide thicknesses (EOTs) in the range of 10 Å, crystallized Gd:HfO2 showed higher leakage current densities than crystallized Al:HfO2, with undoped HfO2 in between. Ultimately, the scalability of Al:HfO2 was limited by the ability to crystallize the films at a given thermal budget. As a result, for post-deposition annealing at 800 °C, the EOT of Al:HfO2 based MOS capacitors was limited to ∼8 Å. However, for such an EOT, leakage current densities were reduced by about 100× with respect to HfO2. This demonstrates the high potential of Al:HfO2 for low-standby-power MOS devices.</abstract>
    <parentTitle language="eng">Applied Physics Letters</parentTitle>
    <identifier type="doi">10.1063/1.4870075</identifier>
    <identifier type="issn">0003-6951</identifier>
    <identifier type="issn">1077-3118</identifier>
    <enrichment key="BTU">an der BTU erstellt / created at BTU</enrichment>
    <author>
      <firstName>Christoph</firstName>
      <lastName>Adelmann</lastName>
    </author>
    <submitter>
      <firstName>Karsten</firstName>
      <lastName>Henkel</lastName>
    </submitter>
    <author>
      <firstName>Tom</firstName>
      <lastName>Schram</lastName>
    </author>
    <author>
      <firstName>Soon Aik</firstName>
      <lastName>Chew</lastName>
    </author>
    <author>
      <firstName>J. C.</firstName>
      <lastName>Woicik</lastName>
    </author>
    <author>
      <firstName>Simone</firstName>
      <lastName>Brizzi</lastName>
    </author>
    <author>
      <firstName>Massimo</firstName>
      <lastName>Tallarida</lastName>
    </author>
    <author>
      <firstName>Dieter</firstName>
      <lastName>Schmeißer</lastName>
    </author>
    <author>
      <firstName>Naoto</firstName>
      <lastName>Horiguchi</lastName>
    </author>
    <author>
      <firstName>Sven van</firstName>
      <lastName>Elshocht</lastName>
    </author>
    <author>
      <firstName>Lars-Åke</firstName>
      <lastName>Ragnarsson</lastName>
    </author>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>scalability</value>
    </subject>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>hafnia thin films</value>
    </subject>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>Al:HfO2</value>
    </subject>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>Gd:HfO2</value>
    </subject>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>EXAFS</value>
    </subject>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>equivalent oxide thickness (EOT)</value>
    </subject>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>leakage current</value>
    </subject>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>X-ray absorption spectroscopy (XAS)</value>
    </subject>
    <collection role="old_institute" number="01005">LS Angewandte Physik / Sensorik</collection>
    <collection role="institutes" number="1503">FG Angewandte Physik und Halbleiterspektroskopie</collection>
  </doc>
  <doc>
    <id>10612</id>
    <completedYear/>
    <publishedYear>2014</publishedYear>
    <thesisYearAccepted/>
    <language>deu</language>
    <pageFirst>7</pageFirst>
    <pageLast>14</pageLast>
    <pageNumber/>
    <edition/>
    <issue/>
    <volume/>
    <type>conferenceobject</type>
    <publisherName>Cottbus-Senftenberg</publisherName>
    <publisherPlace>BTU</publisherPlace>
    <creatingCorporation/>
    <contributingCorporation/>
    <belongsToBibliography>0</belongsToBibliography>
    <completedDate>2014-04-24</completedDate>
    <publishedDate>--</publishedDate>
    <thesisDateAccepted>--</thesisDateAccepted>
    <title language="deu">PE-ALD-Al2O3-Schichten für die Passivierung von Solarzellen</title>
    <abstract language="deu">Dünne Al2O3-Schichten wurden bei Substrattemperaturen zwischen Raumtemperatur und 200°C mittels PE-ALD auf Si-Substraten abgeschieden und ellipsometrisch, spektroskopisch und elektrisch charakterisiert. Ihr Potenzial für die chemische und Feldeffektpassivierung der Oberflächenrekombination wird bewertet.</abstract>
    <parentTitle language="deu">Tagungsband Photovoltaik-Meeting: Anwendungen-Qualität-Perspektiven, Senftenberg, 16.04.2014</parentTitle>
    <enrichment key="BTU">an der BTU erstellt / created at BTU</enrichment>
    <author>
      <firstName>Karsten</firstName>
      <lastName>Henkel</lastName>
    </author>
    <editor>
      <firstName>Bernhard K.</firstName>
      <lastName>Glück</lastName>
    </editor>
    <submitter>
      <firstName>Karsten</firstName>
      <lastName>Henkel</lastName>
    </submitter>
    <author>
      <firstName>Massimo</firstName>
      <lastName>Tallarida</lastName>
    </author>
    <editor>
      <firstName>Sindy</firstName>
      <lastName>Schmidt</lastName>
    </editor>
    <author>
      <firstName>Jörg</firstName>
      <lastName>Haeberle</lastName>
    </author>
    <editor>
      <firstName>Erhard</firstName>
      <lastName>Stein</lastName>
    </editor>
    <author>
      <firstName>Hassan</firstName>
      <lastName>Gargouri</lastName>
    </author>
    <editor>
      <firstName>Jörg-Uwe</firstName>
      <lastName>Raschke</lastName>
    </editor>
    <author>
      <firstName>Franziska</firstName>
      <lastName>Naumann</lastName>
    </author>
    <editor>
      <firstName>Hans</firstName>
      <lastName>Richter</lastName>
    </editor>
    <author>
      <firstName>Bernd</firstName>
      <lastName>Gruska</lastName>
    </author>
    <author>
      <firstName>Michael</firstName>
      <lastName>Arens</lastName>
    </author>
    <author>
      <firstName>Dieter</firstName>
      <lastName>Schmeißer</lastName>
    </author>
    <subject>
      <language>deu</language>
      <type>uncontrolled</type>
      <value>Al2O3</value>
    </subject>
    <subject>
      <language>deu</language>
      <type>uncontrolled</type>
      <value>Atomlagenabscheidung (ALD)</value>
    </subject>
    <subject>
      <language>deu</language>
      <type>uncontrolled</type>
      <value>Passivierung</value>
    </subject>
    <subject>
      <language>deu</language>
      <type>uncontrolled</type>
      <value>PE-ALD</value>
    </subject>
    <subject>
      <language>deu</language>
      <type>uncontrolled</type>
      <value>negative fixe Oxidladungen</value>
    </subject>
    <collection role="old_institute" number="01005">LS Angewandte Physik / Sensorik</collection>
    <collection role="institutes" number="1503">FG Angewandte Physik und Halbleiterspektroskopie</collection>
  </doc>
</export-example>
