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    <language>eng</language>
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    <pageLast>1231</pageLast>
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    <edition/>
    <issue>8</issue>
    <volume>45</volume>
    <type>articler</type>
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    <belongsToBibliography>0</belongsToBibliography>
    <completedDate>2003-08-21</completedDate>
    <publishedDate>--</publishedDate>
    <thesisDateAccepted>--</thesisDateAccepted>
    <title language="eng">Formation of atomically smooth, ultrathin oxides on Si(113)</title>
    <parentTitle language="deu">Solid state electronics</parentTitle>
    <identifier type="issn">0038-1101</identifier>
    <enrichment key="UBICOIdent">001702</enrichment>
    <author>
      <firstName>Hans-Joachim</firstName>
      <lastName>Müssig</lastName>
    </author>
    <submitter>
      <firstName>...</firstName>
      <lastName>Administrator</lastName>
    </submitter>
    <author>
      <firstName>Jarek Marek</firstName>
      <lastName>Dabrowski</lastName>
    </author>
    <author>
      <firstName>S.</firstName>
      <lastName>Hinrich</lastName>
    </author>
    <collection role="old_institute" number="01044">LS Systeme</collection>
    <collection role="institutes" number="1222">FG Systeme</collection>
  </doc>
  <doc>
    <id>1982</id>
    <completedYear/>
    <publishedYear>2004</publishedYear>
    <thesisYearAccepted/>
    <language>eng</language>
    <pageFirst>88</pageFirst>
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    <edition/>
    <issue>1</issue>
    <volume>85</volume>
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    <belongsToBibliography>0</belongsToBibliography>
    <completedDate>2005-06-02</completedDate>
    <publishedDate>--</publishedDate>
    <thesisDateAccepted>--</thesisDateAccepted>
    <title language="eng">Silicate Layer Formation at the Pr2O3 / Si(001) Interfaces</title>
    <abstract language="eng">We studied Pr2O3/Si(001) interfaces by synchrotron radiation photoelectron spectroscopy and by ab initio calculations. We show that the interface formed during molecular-beam epitaxy under the oxygen partial pressure above 1%D710-8  mbar consists of a mixed Si-Pr oxide, such as (Pr2O3)(SiO)x(SiO2)y. Neither an interfacial SiO2 nor an interfacial silicide is formed. The silicate formation is driven by a low energy of O in a PrOSi bond and by the strain in the subsurface SiOx layer. We expect that this natural interfacial Pr silicate will facilitate the integration of the high-k dielectric Pr2O3 into future complementary metal-oxide-semiconductor technologies.</abstract>
    <parentTitle language="eng">Applied Physics Letters</parentTitle>
    <identifier type="issn">1077-3118</identifier>
    <enrichment key="UBICOIdent">002404</enrichment>
    <author>
      <firstName>Dieter</firstName>
      <lastName>Schmeißer</lastName>
    </author>
    <submitter>
      <firstName>...</firstName>
      <lastName>Administrator</lastName>
    </submitter>
    <author>
      <firstName>Hans-Joachim</firstName>
      <lastName>Müssig</lastName>
    </author>
    <author>
      <firstName>Jarek Marek</firstName>
      <lastName>Dabrowski</lastName>
    </author>
    <collection role="old_institute" number="01005">LS Angewandte Physik / Sensorik</collection>
    <collection role="institutes" number="1503">FG Angewandte Physik und Halbleiterspektroskopie</collection>
  </doc>
  <doc>
    <id>1998</id>
    <completedYear/>
    <publishedYear>2004</publishedYear>
    <thesisYearAccepted/>
    <language>eng</language>
    <pageFirst/>
    <pageLast/>
    <pageNumber>D7.10.</pageNumber>
    <edition/>
    <issue/>
    <volume>811</volume>
    <type>articler</type>
    <publisherName/>
    <publisherPlace/>
    <creatingCorporation/>
    <contributingCorporation/>
    <belongsToBibliography>0</belongsToBibliography>
    <completedDate>2005-06-02</completedDate>
    <publishedDate>--</publishedDate>
    <thesisDateAccepted>--</thesisDateAccepted>
    <title language="eng">Ultrathin Dielectric Films Grown by Solid Phase Reaction of Pr with SiO2</title>
    <parentTitle language="eng">MRS Proceedings</parentTitle>
    <identifier type="issn">1946-4274</identifier>
    <enrichment key="UBICOIdent">002484</enrichment>
    <author>
      <firstName>Hans-Joachim</firstName>
      <lastName>Müssig</lastName>
    </author>
    <submitter>
      <firstName>...</firstName>
      <lastName>Administrator</lastName>
    </submitter>
    <author>
      <firstName>Jarek Marek</firstName>
      <lastName>Dabrowski</lastName>
    </author>
    <author>
      <firstName>Christian</firstName>
      <lastName>Wenger</lastName>
    </author>
    <author>
      <firstName>Grzegorz</firstName>
      <lastName>Lupina</lastName>
    </author>
    <author>
      <firstName>Roland</firstName>
      <lastName>Sorge</lastName>
    </author>
    <author>
      <firstName>Peter</firstName>
      <lastName>Formanek</lastName>
    </author>
    <author>
      <firstName>Peter</firstName>
      <lastName>Zaumseil</lastName>
    </author>
    <author>
      <firstName>Dieter</firstName>
      <lastName>Schmeißer</lastName>
    </author>
    <collection role="old_institute" number="01005">LS Angewandte Physik / Sensorik</collection>
    <collection role="institutes" number="1503">FG Angewandte Physik und Halbleiterspektroskopie</collection>
  </doc>
  <doc>
    <id>2617</id>
    <completedYear/>
    <publishedYear>2005</publishedYear>
    <thesisYearAccepted/>
    <language>eng</language>
    <pageFirst/>
    <pageLast/>
    <pageNumber>S. 092901</pageNumber>
    <edition/>
    <issue>5</issue>
    <volume>87</volume>
    <type>articler</type>
    <publisherName/>
    <publisherPlace/>
    <creatingCorporation/>
    <contributingCorporation/>
    <belongsToBibliography>0</belongsToBibliography>
    <completedDate>2005-09-13</completedDate>
    <publishedDate>--</publishedDate>
    <thesisDateAccepted>--</thesisDateAccepted>
    <title language="eng">Praseodymium silicate layers with atomically abrupt interface on Si(100)</title>
    <parentTitle language="deu">Applied Physics Letters</parentTitle>
    <identifier type="issn">0003-6951</identifier>
    <enrichment key="UBICOIdent">003144</enrichment>
    <author>
      <firstName>Grzegorz</firstName>
      <lastName>Lupina</lastName>
    </author>
    <submitter>
      <firstName>...</firstName>
      <lastName>Administrator</lastName>
    </submitter>
    <author>
      <firstName>Thomas</firstName>
      <lastName>Schroeder</lastName>
    </author>
    <author>
      <firstName>Jarek Marek</firstName>
      <lastName>Dabrowski</lastName>
    </author>
    <author>
      <firstName>Dieter</firstName>
      <lastName>Schmeißer</lastName>
    </author>
    <author>
      <firstName>Patrick</firstName>
      <lastName>Hoffmann</lastName>
    </author>
    <collection role="old_institute" number="01005">LS Angewandte Physik / Sensorik</collection>
    <collection role="institutes" number="1503">FG Angewandte Physik und Halbleiterspektroskopie</collection>
  </doc>
  <doc>
    <id>4231</id>
    <completedYear/>
    <publishedYear>2009</publishedYear>
    <thesisYearAccepted/>
    <language>eng</language>
    <pageFirst>271</pageFirst>
    <pageLast>276</pageLast>
    <pageNumber/>
    <edition/>
    <issue>1</issue>
    <volume>27</volume>
    <type>articler</type>
    <publisherName/>
    <publisherPlace/>
    <creatingCorporation/>
    <contributingCorporation/>
    <belongsToBibliography>0</belongsToBibliography>
    <completedDate>2009-07-14</completedDate>
    <publishedDate>--</publishedDate>
    <thesisDateAccepted>--</thesisDateAccepted>
    <title language="eng">On the band gaps and electronic structure of thin single crystalline praseodymium oxide layers on Si(111)</title>
    <parentTitle language="eng">Journal of vacuum science &amp; technology / B</parentTitle>
    <enrichment key="UBICOIdent">005004</enrichment>
    <author>
      <firstName>Dieter</firstName>
      <lastName>Schmeißer</lastName>
    </author>
    <submitter>
      <firstName>...</firstName>
      <lastName>Administrator</lastName>
    </submitter>
    <author>
      <firstName>S.</firstName>
      <lastName>Müller</lastName>
    </author>
    <author>
      <firstName>Olaf</firstName>
      <lastName>Seifarth</lastName>
    </author>
    <author>
      <firstName>Jarek Marek</firstName>
      <lastName>Dabrowski</lastName>
    </author>
    <author>
      <firstName>Hans-Joachim</firstName>
      <lastName>Müssig</lastName>
    </author>
    <author>
      <firstName>Thomas</firstName>
      <lastName>Schroeder</lastName>
    </author>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>band gabs</value>
    </subject>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>electronic structure</value>
    </subject>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>oxide layers</value>
    </subject>
    <collection role="old_institute" number="01005">LS Angewandte Physik / Sensorik</collection>
    <collection role="institutes" number="1503">FG Angewandte Physik und Halbleiterspektroskopie</collection>
  </doc>
  <doc>
    <id>6334</id>
    <completedYear/>
    <publishedYear>2011</publishedYear>
    <thesisYearAccepted/>
    <language>eng</language>
    <pageFirst/>
    <pageLast/>
    <pageNumber/>
    <edition/>
    <issue>1</issue>
    <volume>29</volume>
    <type>articler</type>
    <publisherName/>
    <publisherPlace/>
    <creatingCorporation/>
    <contributingCorporation/>
    <belongsToBibliography>0</belongsToBibliography>
    <completedDate>2011-11-16</completedDate>
    <publishedDate>--</publishedDate>
    <thesisDateAccepted>--</thesisDateAccepted>
    <title language="eng">Atomic-scale engineering of future high-k dynamic random access memory dielectrics: The example of partial Hf substitution by Ti in BaHfO3</title>
    <parentTitle language="eng">Journal of Vacuum Science and Technology / B</parentTitle>
    <identifier type="issn">2166-2754</identifier>
    <enrichment key="UBICOIdent">007279</enrichment>
    <author>
      <firstName>Piotr T.</firstName>
      <lastName>Dudek</lastName>
    </author>
    <submitter>
      <firstName>...</firstName>
      <lastName>Administrator</lastName>
    </submitter>
    <author>
      <firstName>Grzegorz</firstName>
      <lastName>Lupina</lastName>
    </author>
    <author>
      <firstName>Grzegorz</firstName>
      <lastName>Kozłowski</lastName>
    </author>
    <author>
      <firstName>Peter</firstName>
      <lastName>Zaumseil</lastName>
    </author>
    <author>
      <firstName>Jakob</firstName>
      <lastName>Bauer</lastName>
    </author>
    <author>
      <firstName>Oksana</firstName>
      <lastName>Fursenko</lastName>
    </author>
    <author>
      <firstName>Jarek Marek</firstName>
      <lastName>Dabrowski</lastName>
    </author>
    <author>
      <firstName>R.</firstName>
      <lastName>Schmidt</lastName>
    </author>
    <author>
      <firstName>Gunther</firstName>
      <lastName>Lippert</lastName>
    </author>
    <author>
      <firstName>Hans-Joachim</firstName>
      <lastName>Müssig</lastName>
    </author>
    <author>
      <firstName>Thomas</firstName>
      <lastName>Schröder</lastName>
    </author>
    <author>
      <firstName>Dieter</firstName>
      <lastName>Schmeißer</lastName>
    </author>
    <author>
      <firstName>Ehrenfried</firstName>
      <lastName>Zschech</lastName>
    </author>
    <collection role="old_institute" number="01005">LS Angewandte Physik / Sensorik</collection>
    <collection role="institutes" number="1503">FG Angewandte Physik und Halbleiterspektroskopie</collection>
  </doc>
  <doc>
    <id>9303</id>
    <completedYear/>
    <publishedYear>2012</publishedYear>
    <thesisYearAccepted/>
    <language>eng</language>
    <pageFirst>035302</pageFirst>
    <pageLast>035311</pageLast>
    <pageNumber/>
    <edition/>
    <issue>3</issue>
    <volume>85</volume>
    <type>articler</type>
    <publisherName/>
    <publisherPlace/>
    <creatingCorporation/>
    <contributingCorporation/>
    <belongsToBibliography>0</belongsToBibliography>
    <completedDate>2013-08-22</completedDate>
    <publishedDate>--</publishedDate>
    <thesisDateAccepted>--</thesisDateAccepted>
    <title language="eng">On the unusual stacking behavior of twin-free, type B oriented CeO2(111) films on hexagonal Pr2O3(0001) / Si(111) systems</title>
    <parentTitle language="eng">Physical Review</parentTitle>
    <identifier type="doi">10.1103/PhysRevB.85.035302</identifier>
    <identifier type="url">http://link.aps.org/doi/10.1103/PhysRevB.85.035302</identifier>
    <identifier type="issn">1098-0121</identifier>
    <enrichment key="BTU">an der BTU erstellt / created at BTU</enrichment>
    <author>
      <firstName>Marvin Hartwig</firstName>
      <lastName>Zöllner</lastName>
    </author>
    <submitter>
      <firstName>Marion</firstName>
      <lastName>Borrmann</lastName>
    </submitter>
    <author>
      <firstName>Jarek Marek</firstName>
      <lastName>Dabrowski</lastName>
    </author>
    <author>
      <firstName>Peter</firstName>
      <lastName>Zaumseil</lastName>
    </author>
    <author>
      <firstName>A.</firstName>
      <lastName>Giussani</lastName>
    </author>
    <author>
      <firstName>Markus Andreas</firstName>
      <lastName>Schubert</lastName>
    </author>
    <author>
      <firstName>Grzegorz</firstName>
      <lastName>Lupina</lastName>
    </author>
    <author>
      <firstName>Henrik</firstName>
      <lastName>Wilkens</lastName>
    </author>
    <author>
      <firstName>Joachim</firstName>
      <lastName>Wollschläger</lastName>
    </author>
    <author>
      <firstName>Marcus</firstName>
      <lastName>Bäumer</lastName>
    </author>
    <author>
      <firstName>M.</firstName>
      <lastName>Reichling</lastName>
    </author>
    <author>
      <firstName>Thomas</firstName>
      <lastName>Schröder</lastName>
    </author>
    <collection role="old_institute" number="01050">LS Halbleitermaterialien</collection>
    <collection role="institutes" number="1521">FG Halbleitermaterialien</collection>
  </doc>
  <doc>
    <id>11538</id>
    <completedYear/>
    <publishedYear>2013</publishedYear>
    <thesisYearAccepted/>
    <language>eng</language>
    <pageFirst>011906-1</pageFirst>
    <pageLast>011906-5</pageLast>
    <pageNumber/>
    <edition/>
    <issue/>
    <volume>102</volume>
    <type>articler</type>
    <publisherName/>
    <publisherPlace/>
    <creatingCorporation/>
    <contributingCorporation/>
    <belongsToBibliography>0</belongsToBibliography>
    <completedDate>2014-07-04</completedDate>
    <publishedDate>--</publishedDate>
    <thesisDateAccepted>--</thesisDateAccepted>
    <title language="eng">Lattice-matched single crystalline ternary PrxY2-xO3 films on SrO-passivated Si (001): interface engineering and crystallography tailoring</title>
    <parentTitle language="eng">Applied Physics Letters</parentTitle>
    <enrichment key="BTU">an der BTU erstellt / created at BTU</enrichment>
    <author>
      <firstName>Gang</firstName>
      <lastName>Niu</lastName>
    </author>
    <submitter>
      <firstName>Marion</firstName>
      <lastName>Borrmann</lastName>
    </submitter>
    <author>
      <firstName>Peter</firstName>
      <lastName>Zaumseil</lastName>
    </author>
    <author>
      <firstName>Markus Andreas</firstName>
      <lastName>Schubert</lastName>
    </author>
    <author>
      <firstName>Marvin Hartwig</firstName>
      <lastName>Zöllner</lastName>
    </author>
    <author>
      <firstName>Jarek Marek</firstName>
      <lastName>Dabrowski</lastName>
    </author>
    <author>
      <firstName>Thomas</firstName>
      <lastName>Schroeder</lastName>
    </author>
    <collection role="old_institute" number="01050">LS Halbleitermaterialien</collection>
    <collection role="institutes" number="1521">FG Halbleitermaterialien</collection>
  </doc>
  <doc>
    <id>11540</id>
    <completedYear/>
    <publishedYear>2013</publishedYear>
    <thesisYearAccepted/>
    <language>eng</language>
    <pageFirst>213507</pageFirst>
    <pageLast>213507</pageLast>
    <pageNumber/>
    <edition/>
    <issue>21</issue>
    <volume>113</volume>
    <type>articler</type>
    <publisherName/>
    <publisherPlace/>
    <creatingCorporation/>
    <contributingCorporation/>
    <belongsToBibliography>0</belongsToBibliography>
    <completedDate>2014-07-04</completedDate>
    <publishedDate>--</publishedDate>
    <thesisDateAccepted>--</thesisDateAccepted>
    <title language="eng">Interface science of virtual GaN substrates on Si(111) via Sc2O3/Y2O3 buffers: Experiment and Theory</title>
    <parentTitle language="eng">Journal of Applied Physics</parentTitle>
    <identifier type="issn">0021-8979</identifier>
    <enrichment key="BTU">an der BTU erstellt / created at BTU</enrichment>
    <author>
      <firstName>Lidia Lupina</firstName>
      <lastName>Tarnawska</lastName>
    </author>
    <submitter>
      <firstName>Marion</firstName>
      <lastName>Borrmann</lastName>
    </submitter>
    <author>
      <firstName>Jarek Marek</firstName>
      <lastName>Dabrowski</lastName>
    </author>
    <author>
      <firstName>Tomasz</firstName>
      <lastName>Grzela</lastName>
    </author>
    <author>
      <firstName>T.</firstName>
      <lastName>Niermann</lastName>
    </author>
    <author>
      <firstName>M.</firstName>
      <lastName>Lehmann</lastName>
    </author>
    <author>
      <firstName>Peter</firstName>
      <lastName>Storck</lastName>
    </author>
    <author>
      <firstName>Thomas</firstName>
      <lastName>Schröder</lastName>
    </author>
    <collection role="old_institute" number="01050">LS Halbleitermaterialien</collection>
    <collection role="institutes" number="1521">FG Halbleitermaterialien</collection>
  </doc>
  <doc>
    <id>15721</id>
    <completedYear/>
    <publishedYear>2008</publishedYear>
    <thesisYearAccepted/>
    <language>eng</language>
    <pageFirst>G97</pageFirst>
    <pageLast>G114</pageLast>
    <pageNumber/>
    <edition/>
    <issue>5</issue>
    <volume>155</volume>
    <type>articler</type>
    <publisherName/>
    <publisherPlace/>
    <creatingCorporation/>
    <contributingCorporation/>
    <belongsToBibliography>0</belongsToBibliography>
    <completedDate>2016-04-21</completedDate>
    <publishedDate>--</publishedDate>
    <thesisDateAccepted>--</thesisDateAccepted>
    <title language="eng">Morphology and composition of selected high-k materials and their relevance to dielectric properties of thin films</title>
    <parentTitle language="eng">Journal of the electrochemical society</parentTitle>
    <identifier type="doi">10.1149/1.2875741</identifier>
    <identifier type="issn">1945-7111</identifier>
    <enrichment key="BTU">an der BTU erstellt / created at BTU</enrichment>
    <author>
      <firstName>Gunther</firstName>
      <lastName>Lippert</lastName>
    </author>
    <submitter>
      <firstName>Marion</firstName>
      <lastName>Tülling</lastName>
    </submitter>
    <author>
      <firstName>Jarek Marek</firstName>
      <lastName>Dabrowski</lastName>
    </author>
    <author>
      <firstName>Lars</firstName>
      <lastName>Oberbeck</lastName>
    </author>
    <author>
      <firstName>Uwe</firstName>
      <lastName>Schroeder</lastName>
    </author>
    <author>
      <firstName>Ioan</firstName>
      <lastName>Costina</lastName>
    </author>
    <author>
      <firstName>Grzegorz</firstName>
      <lastName>Lupina</lastName>
    </author>
    <author>
      <firstName>Markus</firstName>
      <lastName>Ratzke</lastName>
    </author>
    <author>
      <firstName>Peter</firstName>
      <lastName>Zaumseil</lastName>
    </author>
    <author>
      <firstName>Hans-Joachim</firstName>
      <lastName>Müssig</lastName>
    </author>
    <collection role="institutes" number="1504">FG Experimentalphysik und funktionale Materialien</collection>
  </doc>
  <doc>
    <id>18958</id>
    <completedYear/>
    <publishedYear>2016</publishedYear>
    <thesisYearAccepted/>
    <language>eng</language>
    <pageFirst>Art. 31639</pageFirst>
    <pageLast/>
    <pageNumber>10</pageNumber>
    <edition/>
    <issue>6</issue>
    <volume/>
    <type>articler</type>
    <publisherName/>
    <publisherPlace/>
    <creatingCorporation/>
    <contributingCorporation/>
    <belongsToBibliography>0</belongsToBibliography>
    <completedDate>2017-03-03</completedDate>
    <publishedDate>--</publishedDate>
    <thesisDateAccepted>--</thesisDateAccepted>
    <title language="eng">Understanding the growth mechanism of graphene on Ge/Si(001) surfaces</title>
    <parentTitle language="eng">Scientific Reports</parentTitle>
    <identifier type="doi">10.1038/srep31639</identifier>
    <identifier type="issn">2045-2322</identifier>
    <enrichment key="BTU">an der BTU erstellt / created at BTU</enrichment>
    <author>
      <firstName>Jarek Marek</firstName>
      <lastName>Dabrowski</lastName>
    </author>
    <submitter>
      <firstName>Marion</firstName>
      <lastName>Tülling</lastName>
    </submitter>
    <author>
      <firstName>Gunther</firstName>
      <lastName>Lippert</lastName>
    </author>
    <author>
      <firstName>J.</firstName>
      <lastName>Avila</lastName>
    </author>
    <author>
      <firstName>Jens</firstName>
      <lastName>Baringhaus</lastName>
    </author>
    <author>
      <firstName>I.</firstName>
      <lastName>Colambo</lastName>
    </author>
    <author>
      <firstName>Yu. S.</firstName>
      <lastName>Dedkov</lastName>
    </author>
    <author>
      <firstName>Felix</firstName>
      <lastName>Herziger</lastName>
    </author>
    <author>
      <firstName>Grzegorz</firstName>
      <lastName>Lupina</lastName>
    </author>
    <author>
      <firstName>J.</firstName>
      <lastName>Maultzsch</lastName>
    </author>
    <author>
      <firstName>T.</firstName>
      <lastName>Schaffus</lastName>
    </author>
    <author>
      <firstName>Thomas</firstName>
      <lastName>Schröder</lastName>
    </author>
    <author>
      <firstName>Małgorzata</firstName>
      <lastName>Sowinska</lastName>
    </author>
    <author>
      <firstName>Christoph</firstName>
      <lastName>Tegenkamp</lastName>
    </author>
    <author>
      <firstName>D.</firstName>
      <lastName>Vignaud</lastName>
    </author>
    <author>
      <firstName>Maria Carmen</firstName>
      <lastName>Asensio</lastName>
    </author>
    <collection role="institutes" number="1521">FG Halbleitermaterialien</collection>
  </doc>
  <doc>
    <id>18963</id>
    <completedYear/>
    <publishedYear>2016</publishedYear>
    <thesisYearAccepted/>
    <language>eng</language>
    <pageFirst>135103</pageFirst>
    <pageLast/>
    <pageNumber/>
    <edition/>
    <issue/>
    <volume>120</volume>
    <type>articler</type>
    <publisherName/>
    <publisherPlace/>
    <creatingCorporation/>
    <contributingCorporation/>
    <belongsToBibliography>0</belongsToBibliography>
    <completedDate>2017-03-03</completedDate>
    <publishedDate>--</publishedDate>
    <thesisDateAccepted>--</thesisDateAccepted>
    <title language="eng">Growth of ScN(111) on Sc₂O₃ (111) for GaN integration on Si(111): Experiment and ab initio calculations</title>
    <parentTitle language="eng">Journal of Applied Physics</parentTitle>
    <identifier type="doi">10.1063/1.4963826</identifier>
    <identifier type="issn">1089-7550</identifier>
    <identifier type="issn">0021-8979</identifier>
    <enrichment key="BTU">an der BTU erstellt / created at BTU</enrichment>
    <author>
      <firstName>Prabha</firstName>
      <lastName>Sana</lastName>
    </author>
    <submitter>
      <firstName>Marion</firstName>
      <lastName>Tülling</lastName>
    </submitter>
    <author>
      <firstName>Henriette</firstName>
      <lastName>Tetzner</lastName>
    </author>
    <author>
      <firstName>Jarek Marek</firstName>
      <lastName>Dabrowski</lastName>
    </author>
    <author>
      <firstName>Lidia Lupina</firstName>
      <lastName>Tarnawska</lastName>
    </author>
    <author>
      <firstName>Ioan</firstName>
      <lastName>Costina</lastName>
    </author>
    <author>
      <firstName>Sarad</firstName>
      <lastName>Thapa</lastName>
    </author>
    <author>
      <firstName>Peter</firstName>
      <lastName>Storck</lastName>
    </author>
    <author>
      <firstName>Thomas</firstName>
      <lastName>Schröder</lastName>
    </author>
    <author>
      <firstName>Marvin Hartwig</firstName>
      <lastName>Zöllner</lastName>
    </author>
    <collection role="institutes" number="1521">FG Halbleitermaterialien</collection>
  </doc>
  <doc>
    <id>18966</id>
    <completedYear/>
    <publishedYear>2016</publishedYear>
    <thesisYearAccepted/>
    <language>eng</language>
    <pageFirst>533</pageFirst>
    <pageLast>540</pageLast>
    <pageNumber/>
    <edition/>
    <issue>8</issue>
    <volume>75</volume>
    <type>articler</type>
    <publisherName/>
    <publisherPlace/>
    <creatingCorporation/>
    <contributingCorporation/>
    <belongsToBibliography>0</belongsToBibliography>
    <completedDate>2017-03-03</completedDate>
    <publishedDate>--</publishedDate>
    <thesisDateAccepted>--</thesisDateAccepted>
    <title language="eng">Graphene Synthesis and Processing on Ge Substrates</title>
    <parentTitle language="eng">ECS transactions</parentTitle>
    <identifier type="doi">10.1149/07508.0533ecst</identifier>
    <identifier type="issn">1938-6737</identifier>
    <identifier type="issn">1938-5862</identifier>
    <enrichment key="BTU">an der BTU erstellt / created at BTU</enrichment>
    <author>
      <firstName>Mindaugas</firstName>
      <lastName>Lukosius</lastName>
    </author>
    <submitter>
      <firstName>Marion</firstName>
      <lastName>Tülling</lastName>
    </submitter>
    <author>
      <firstName>Gunther</firstName>
      <lastName>Lippert</lastName>
    </author>
    <author>
      <firstName>Jarek Marek</firstName>
      <lastName>Dabrowski</lastName>
    </author>
    <author>
      <firstName>Julia</firstName>
      <lastName>Kitzmann</lastName>
    </author>
    <author>
      <firstName>Marco</firstName>
      <lastName>Lisker</lastName>
    </author>
    <author>
      <firstName>Philipp</firstName>
      <lastName>Kulse</lastName>
    </author>
    <author>
      <firstName>Andreas</firstName>
      <lastName>Krüger</lastName>
    </author>
    <author>
      <firstName>Oksana</firstName>
      <lastName>Fursenko</lastName>
    </author>
    <author>
      <firstName>Ioan</firstName>
      <lastName>Costina</lastName>
    </author>
    <author>
      <firstName>Andreas</firstName>
      <lastName>Trusch</lastName>
    </author>
    <author>
      <firstName>Yuji</firstName>
      <lastName>Yamamoto</lastName>
    </author>
    <author>
      <firstName>Andre</firstName>
      <lastName>Wolff</lastName>
    </author>
    <author>
      <firstName>Andreas</firstName>
      <lastName>Mai</lastName>
    </author>
    <author>
      <firstName>Thomas</firstName>
      <lastName>Schröder</lastName>
    </author>
    <collection role="institutes" number="1521">FG Halbleitermaterialien</collection>
  </doc>
  <doc>
    <id>18967</id>
    <completedYear/>
    <publishedYear>2016</publishedYear>
    <thesisYearAccepted/>
    <language>eng</language>
    <pageFirst>33786</pageFirst>
    <pageLast>33793</pageLast>
    <pageNumber/>
    <edition/>
    <issue>49</issue>
    <volume>8</volume>
    <type>articler</type>
    <publisherName/>
    <publisherPlace/>
    <creatingCorporation/>
    <contributingCorporation/>
    <belongsToBibliography>0</belongsToBibliography>
    <completedDate>2017-03-03</completedDate>
    <publishedDate>--</publishedDate>
    <thesisDateAccepted>--</thesisDateAccepted>
    <title language="eng">Metal-free, CVD Graphene synthesis on 200 mm Ge / Si(001) substrates</title>
    <parentTitle language="eng">ACS Applied Materials and Interfaces</parentTitle>
    <identifier type="doi">10.1021/acsami.6b11397</identifier>
    <identifier type="issn">1944-8244</identifier>
    <identifier type="issn">1944-8252</identifier>
    <enrichment key="BTU">an der BTU erstellt / created at BTU</enrichment>
    <author>
      <firstName>Mindaugas</firstName>
      <lastName>Lukosius</lastName>
    </author>
    <submitter>
      <firstName>Marion</firstName>
      <lastName>Tülling</lastName>
    </submitter>
    <author>
      <firstName>Jarek Marek</firstName>
      <lastName>Dabrowski</lastName>
    </author>
    <author>
      <firstName>Marco</firstName>
      <lastName>Lisker</lastName>
    </author>
    <author>
      <firstName>Julia</firstName>
      <lastName>Kitzmann</lastName>
    </author>
    <author>
      <firstName>Sebastian</firstName>
      <lastName>Schulze</lastName>
    </author>
    <author>
      <firstName>Gunther</firstName>
      <lastName>Lippert</lastName>
    </author>
    <author>
      <firstName>Oksana</firstName>
      <lastName>Fursenko</lastName>
    </author>
    <author>
      <firstName>Yuji</firstName>
      <lastName>Yamamoto</lastName>
    </author>
    <author>
      <firstName>Markus Andreas</firstName>
      <lastName>Schubert</lastName>
    </author>
    <author>
      <firstName>Hans-Michael</firstName>
      <lastName>Krause</lastName>
    </author>
    <author>
      <firstName>Andre</firstName>
      <lastName>Wolff</lastName>
    </author>
    <author>
      <firstName>A.</firstName>
      <lastName>Mai</lastName>
    </author>
    <author>
      <firstName>Thomas</firstName>
      <lastName>Schröder</lastName>
    </author>
    <author>
      <firstName>Grzegorz</firstName>
      <lastName>Lupina</lastName>
    </author>
    <collection role="institutes" number="1521">FG Halbleitermaterialien</collection>
  </doc>
  <doc>
    <id>27698</id>
    <completedYear/>
    <publishedYear>2021</publishedYear>
    <thesisYearAccepted/>
    <language>eng</language>
    <pageFirst>1</pageFirst>
    <pageLast>8</pageLast>
    <pageNumber/>
    <edition/>
    <issue/>
    <volume>713</volume>
    <type>articler</type>
    <publisherName/>
    <publisherPlace/>
    <creatingCorporation/>
    <contributingCorporation/>
    <belongsToBibliography>0</belongsToBibliography>
    <completedDate>2021-08-09</completedDate>
    <publishedDate>--</publishedDate>
    <thesisDateAccepted>--</thesisDateAccepted>
    <title language="eng">Ge(001) surface reconstruction with Sn impurities</title>
    <abstract language="eng">Defects play an important role for surface reconstructions and therefore also influence the substrate growth. In this work we present a first principle calculation for the Ge(001) surface without and with tin impurities incorporated into the top surface layer. By mapping the system onto an Ising-type model, with interaction constants taken from density functional theory, the stability of the surface reconstructions under the influence of different concentrations of tin impurities is explored. This approach allows us to simulate the possible phase transitions for the different surface reconstructions including the local structure around the tin impurity atoms. In addition, we compare our theoretical results with experimental STM images on clean and Sn-doped Ge(100) surfaces.</abstract>
    <parentTitle language="eng">Surface Science</parentTitle>
    <identifier type="url">https://www.sciencedirect.com/science/article/pii/S0039602821001163?dgcid=author</identifier>
    <identifier type="doi">10.1016/j.susc.2021.121912</identifier>
    <enrichment key="BTU">an der BTU erstellt / created at BTU</enrichment>
    <enrichment key="opus.source">publish</enrichment>
    <enrichment key="Artikelnummer">121912</enrichment>
    <enrichment key="opus.doi.autoCreate">false</enrichment>
    <enrichment key="opus.urn.autoCreate">false</enrichment>
    <enrichment key="Fprofil">1 Energiewende und Dekarbonisierung / Energy Transition and Decarbonisation</enrichment>
    <enrichment key="Fprofil">4 Künstliche Intelligenz und Sensorik / Artificial Intelligence and Sensor Technology</enrichment>
    <author>
      <firstName>Katharina</firstName>
      <lastName>Noatschk</lastName>
    </author>
    <submitter>
      <firstName>Katrin</firstName>
      <lastName>Gregor</lastName>
    </submitter>
    <author>
      <firstName>E. V. S.</firstName>
      <lastName>Hofmann</lastName>
    </author>
    <author>
      <firstName>Jarek Marek</firstName>
      <lastName>Dabrowski</lastName>
    </author>
    <author>
      <firstName>Neil J.</firstName>
      <lastName>Curson</lastName>
    </author>
    <author>
      <firstName>Thomas</firstName>
      <lastName>Schröder</lastName>
    </author>
    <author>
      <firstName>Wolfgang Matthias</firstName>
      <lastName>Klesse</lastName>
    </author>
    <author>
      <firstName>Götz</firstName>
      <lastName>Seibold</lastName>
    </author>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>Gesn</value>
    </subject>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>DFT</value>
    </subject>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>Monte carlo simulations</value>
    </subject>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>Surface reconstruction</value>
    </subject>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>Impurities</value>
    </subject>
    <collection role="institutes" number="1501">FG Computational Physics</collection>
  </doc>
</export-example>
