<?xml version="1.0" encoding="utf-8"?>
<export-example>
  <doc>
    <id>21890</id>
    <completedYear/>
    <publishedYear>2018</publishedYear>
    <thesisYearAccepted/>
    <language>eng</language>
    <pageFirst>162</pageFirst>
    <pageLast>171</pageLast>
    <pageNumber/>
    <edition/>
    <issue/>
    <volume/>
    <type>bookpart</type>
    <publisherName>Elsevier</publisherName>
    <publisherPlace>Oxford</publisherPlace>
    <creatingCorporation/>
    <contributingCorporation/>
    <belongsToBibliography>0</belongsToBibliography>
    <completedDate>2018-05-14</completedDate>
    <publishedDate>--</publishedDate>
    <thesisDateAccepted>--</thesisDateAccepted>
    <title language="eng">Interface Potentials, Intrinsic Defects, and Passivation Mechanisms in Al₂O₃, HfO₂, and TiO₂ Ultrathin Films</title>
    <abstract language="eng">We study the electronic structure of ultrathin Al₂O₃, HfO₂, and TiO₂ ALD films by resonant photoelectron spectroscopy. We identify intrinsic defects which are responsible for the active sites in interface reactions, for the incorporation of intrinsic charges, and for the formation of local dipole momenta. All of these features determine the surface potentials and the reactivity of the surface of the atomic layer deposition coated systems. We give examples of charges and dipoles in Al₂O₃, on a study of the surface potentials in HfO₂, and relate the intrinsic defects in TiO₂ to their electrochemical relevance.</abstract>
    <parentTitle language="eng">Encyclopedia of Interfacial Chemistry: Surface Science and Electrochemistry, vol. 3.1</parentTitle>
    <identifier type="isbn">978-0-12-809739-7</identifier>
    <identifier type="isbn">978-0-12-814984-3</identifier>
    <identifier type="doi">10.1016/B978-0-12-409547-2.14119-8</identifier>
    <enrichment key="BTU">an der BTU erstellt / created at BTU</enrichment>
    <author>
      <firstName>Dieter</firstName>
      <lastName>Schmeißer</lastName>
    </author>
    <editor>
      <firstName>Klaus</firstName>
      <lastName>Wandelt</lastName>
    </editor>
    <submitter>
      <firstName>Karsten</firstName>
      <lastName>Henkel</lastName>
    </submitter>
    <author>
      <firstName>Małgorzata</firstName>
      <lastName>Kot</lastName>
    </author>
    <author>
      <firstName>Silma Alberton</firstName>
      <lastName>Corrêa</lastName>
    </author>
    <author>
      <firstName>Chittaranjan</firstName>
      <lastName>Das</lastName>
    </author>
    <author>
      <firstName>Karsten</firstName>
      <lastName>Henkel</lastName>
    </author>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>Atomic layer deposition (ALD)</value>
    </subject>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>Resonant photoelectron spectroscopy (resPES)</value>
    </subject>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>Band scheme</value>
    </subject>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>Interface potential</value>
    </subject>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>Intrinsic charges</value>
    </subject>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>Intrinsic defects</value>
    </subject>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>Partial density of states (pDOS)</value>
    </subject>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>Exciton</value>
    </subject>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>Polaron</value>
    </subject>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>Ligand-to-metal charge transfer</value>
    </subject>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>Aluminium oxide (Al₂O₃)</value>
    </subject>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>Hafnium oxide (HfO₂)</value>
    </subject>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>Titanium Oxide (TiO₂)</value>
    </subject>
    <collection role="institutes" number="1503">FG Angewandte Physik und Halbleiterspektroskopie</collection>
  </doc>
</export-example>
