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    <completedDate>2022-10-04</completedDate>
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    <title language="eng">Integration Aspects of Plasmonic TiN-based Nano-Hole-Arrays on Ge Photodetectorsin a 200mm Wafer CMOS Compatible Silicon Technology</title>
    <abstract language="eng">In this work we present the progress in regard to the integration of a surface plasmon resonance refractive index sensor into a CMOS compatible 200 mm wafer silicon-based technology. Our approach pursues the combination of germanium photodetectors with metallic nanohole arrays. The paper is focused on the technology development to fabricate large area photodetectors based on a modern design concept. In a first iteration we achieved a leakage current density of 82 mA/cm2 at reverse bias of 0.5 V and a maximum optical responsivity of 0.103 A/W measured with TE polarized light at λ = 1310 nm and a reversed bias of 1 V. For the realization of nanohole arrays we used thin Titanium nitride (TiN) layers deposited by a sputtering process. We were able to produce very homogenous TiN layers with a thickness deviation of around 10 % and RMS of 1.413 nm for 150 nm thick TiN layers.</abstract>
    <parentTitle language="eng">ECS Transactions</parentTitle>
    <identifier type="issn">1938-5862</identifier>
    <identifier type="doi">10.1149/10904.0035ecst</identifier>
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    <author>
      <firstName>Christian</firstName>
      <lastName>Mai</lastName>
    </author>
    <submitter>
      <firstName>Christian</firstName>
      <lastName>Wenger</lastName>
    </submitter>
    <author>
      <firstName>Steffen</firstName>
      <lastName>Marschmeyer</lastName>
    </author>
    <author>
      <firstName>Anna</firstName>
      <lastName>Peczek</lastName>
    </author>
    <author>
      <firstName>Aleksandra</firstName>
      <lastName>Kroh</lastName>
    </author>
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      <firstName>Josmy</firstName>
      <lastName>Jose</lastName>
    </author>
    <author>
      <firstName>Sebastian</firstName>
      <lastName>Reiter</lastName>
    </author>
    <author>
      <firstName>Inga Anita</firstName>
      <lastName>Fischer</lastName>
    </author>
    <author>
      <firstName>Christian</firstName>
      <lastName>Wenger</lastName>
    </author>
    <author>
      <firstName>Andreas</firstName>
      <lastName>Mai</lastName>
    </author>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>plasmonics</value>
    </subject>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>nanohole array</value>
    </subject>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>germanium detector</value>
    </subject>
    <collection role="institutes" number="1504">FG Experimentalphysik und funktionale Materialien</collection>
    <collection role="institutes" number="1521">FG Halbleitermaterialien</collection>
  </doc>
  <doc>
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    <completedYear/>
    <publishedYear>2024</publishedYear>
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    <language>eng</language>
    <pageFirst>29099</pageFirst>
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    <pageNumber/>
    <edition/>
    <issue>17</issue>
    <volume>32</volume>
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    <publisherName>Optica Publishing Group</publisherName>
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    <completedDate>2024-10-29</completedDate>
    <publishedDate>--</publishedDate>
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    <title language="eng">Towards a CMOS compatible refractive index sensor: cointegration of TiN nanohole arrays and Ge photodetectors in a 200 mm wafer silicon technology</title>
    <abstract language="eng">In this work, we present the monolithic integration of a TiN nanohole array and a Ge photodetector towards a CMOS compatible fabrication of a refractive index sensor in a 200 mm wafer silicon technology. We developed a technology process that enables fabrication with high yields of around 90%. Ge photodetectors with a Ge layer thickness of 450 nm and an area of 1600 µm2 (40 µm x 40 µm) show dark current densities of around 129 mA/cm2 and responsivities of 0.114 A/W measured by top illumination (TE polarization; λ = 1310 nm; angle of incidence = 14 °) at a reverse bias of 1 V. Nanohole arrays were structured in a 150 nm thick TiN layer. They were integrated into the back end of line and placed spatially close to the Ge photodetectors. After the metallization, passivation, and pad opening, the nanohole arrays were released with the help of an amorphous silicon stop layer. A significant impact of the TiN nanohole arrays on the optical behavior of the photodetector could be proven on the wafer level. Photocurrent measurements by top illumination confirm a strong dependence of optical properties on the polarization of the incident light and the nanohole array design. We demonstrate very stable photocurrents on the wafer level with a standard deviation of σ &amp;lt; 6%.</abstract>
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    <identifier type="doi">10.1364/OE.530081</identifier>
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    <enrichment key="Fprofil">4 Künstliche Intelligenz und Sensorik / Artificial Intelligence and Sensor Technology</enrichment>
    <author>
      <firstName>Christian</firstName>
      <lastName>Mai</lastName>
    </author>
    <submitter>
      <firstName>Christian</firstName>
      <lastName>Wenger</lastName>
    </submitter>
    <author>
      <firstName>Anna</firstName>
      <lastName>Peczek</lastName>
    </author>
    <author>
      <firstName>Aleksandra</firstName>
      <lastName>Kroh</lastName>
    </author>
    <author>
      <firstName>Josmy</firstName>
      <lastName>Jose</lastName>
    </author>
    <author>
      <firstName>Sebastian</firstName>
      <lastName>Reiter</lastName>
    </author>
    <author>
      <firstName>Christian</firstName>
      <lastName>Wenger</lastName>
    </author>
    <author>
      <firstName>Inga Anita</firstName>
      <lastName>Fischer</lastName>
    </author>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>plasmonics</value>
    </subject>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>sensor</value>
    </subject>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>nano hole array</value>
    </subject>
    <collection role="institutes" number="1504">FG Experimentalphysik und funktionale Materialien</collection>
    <collection role="institutes" number="1521">FG Halbleitermaterialien</collection>
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  <doc>
    <id>30781</id>
    <completedYear/>
    <publishedYear>2023</publishedYear>
    <thesisYearAccepted/>
    <language>eng</language>
    <pageFirst>1</pageFirst>
    <pageLast>13</pageLast>
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    <issue/>
    <volume/>
    <type>articler</type>
    <publisherName/>
    <publisherPlace/>
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    <contributingCorporation/>
    <belongsToBibliography>0</belongsToBibliography>
    <completedDate>2023-05-03</completedDate>
    <publishedDate>--</publishedDate>
    <thesisDateAccepted>--</thesisDateAccepted>
    <title language="eng">Titanium Nitride Plasmonic Nanohole Arrays for CMOS-compatible integrated refractive index sensing: influence of layer thickness on optical properties</title>
    <parentTitle language="eng">Plasmonics</parentTitle>
    <identifier type="doi">10.1007/s11468-023-01810-3</identifier>
    <identifier type="issn">1557-1963</identifier>
    <enrichment key="BTU">an der BTU erstellt / created at BTU</enrichment>
    <enrichment key="opus.source">publish</enrichment>
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    <enrichment key="Fprofil">4 Künstliche Intelligenz und Sensorik / Artificial Intelligence and Sensor Technology</enrichment>
    <author>
      <firstName>Sebastian</firstName>
      <lastName>Reiter</lastName>
    </author>
    <submitter>
      <firstName>Marion</firstName>
      <lastName>Tülling</lastName>
    </submitter>
    <author>
      <firstName>Weijia</firstName>
      <lastName>Han</lastName>
    </author>
    <author>
      <firstName>Christian</firstName>
      <lastName>Mai</lastName>
    </author>
    <author>
      <firstName>Davide</firstName>
      <lastName>Spirito</lastName>
    </author>
    <author>
      <firstName>Josmy</firstName>
      <lastName>Jose</lastName>
    </author>
    <author>
      <firstName>Marvin Hartwig</firstName>
      <lastName>Zöllner</lastName>
    </author>
    <author>
      <firstName>Oksana</firstName>
      <lastName>Fursenko</lastName>
    </author>
    <author>
      <firstName>Markus Andreas</firstName>
      <lastName>Schubert</lastName>
    </author>
    <author>
      <firstName>Ivo</firstName>
      <lastName>Stemmler</lastName>
    </author>
    <author>
      <firstName>Christian</firstName>
      <lastName>Wenger</lastName>
    </author>
    <author>
      <firstName>Inga Anita</firstName>
      <lastName>Fischer</lastName>
    </author>
    <collection role="institutes" number="1504">FG Experimentalphysik und funktionale Materialien</collection>
  </doc>
  <doc>
    <id>31147</id>
    <completedYear/>
    <publishedYear>2023</publishedYear>
    <thesisYearAccepted/>
    <language>eng</language>
    <pageFirst>17389</pageFirst>
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    <edition/>
    <issue>11</issue>
    <volume>31</volume>
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    <completedDate>2023-07-03</completedDate>
    <publishedDate>--</publishedDate>
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    <title language="eng">Strongly enhanced sensitivities of CMOS compatible plasmonic titanium nitride nanohole arrays for refractive index sensing under oblique incidence</title>
    <abstract language="eng">Titanium nitride (TiN) is a complementary metal-oxide-semiconductor (CMOS) compatible material with large potential for the fabrication of plasmonic structures suited for device integration. However, the comparatively large optical losses can be detrimental for application. This work reports a CMOS compatible TiN nanohole array (NHA) on top of a multilayer stack for potential use in integrated refractive index sensing with high sensitivities at wavelengths between 800 and 1500 nm. The stack, consisting of the TiN NHA on a silicon dioxide (SiO2) layer with Si as substrate (TiN NHA/SiO2/Si), is prepared using an industrial CMOS compatible process. The TiN NHA/SiO2/Si shows Fano resonances in reflectance spectra under oblique excitation, which are well reproduced by simulation using both finite difference time domain (FDTD) and rigorous coupled-wave analysis (RCWA) methods. The sensitivities derived from spectroscopic characterizations increase with the increasing incident angle and match well with the simulated sensitivities. Our systematic simulation-based investigation of the sensitivity of the TiN NHA/SiO2/Si stack under varied conditions reveals that very large sensitivities up to 2305 nm per refractive index unit (nm RIU−1) are predicted when the refractive index of superstrate is similar to that of the SiO2 layer. We analyze in detail how the interplay between plasmonic and photonic resonances such as surface plasmon polaritons (SPPs), localized surface plasmon resonances (LSPRs), Rayleigh Anomalies (RAs), and photonic microcavity modes (Fabry-Pérot resonances) contributes to this result. This work not only reveals the tunability of TiN nanostructures for plasmonic applications but also paves the way to explore efficient devices for sensing in broad conditions.</abstract>
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    <enrichment key="BTUfunderNamenotEU">Bundesministerium für Bildung und Forschung / 16ES1128K, 16ME0420K</enrichment>
    <enrichment key="Fprofil">4 Künstliche Intelligenz und Sensorik / Artificial Intelligence and Sensor Technology</enrichment>
    <author>
      <firstName>Weijia</firstName>
      <lastName>Han</lastName>
    </author>
    <submitter>
      <firstName>Marion</firstName>
      <lastName>Tülling</lastName>
    </submitter>
    <author>
      <firstName>Sebastian</firstName>
      <lastName>Reiter</lastName>
    </author>
    <author>
      <firstName>Jon</firstName>
      <lastName>Schlipf</lastName>
    </author>
    <author>
      <firstName>Christian</firstName>
      <lastName>Mai</lastName>
    </author>
    <author>
      <firstName>Davide</firstName>
      <lastName>Spirito</lastName>
    </author>
    <author>
      <firstName>Josmy</firstName>
      <lastName>Jose</lastName>
    </author>
    <author>
      <firstName>Christian</firstName>
      <lastName>Wenger</lastName>
    </author>
    <author>
      <firstName>Inga Anita</firstName>
      <lastName>Fischer</lastName>
    </author>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>TiN</value>
    </subject>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>Plasmonics</value>
    </subject>
    <collection role="institutes" number="1504">FG Experimentalphysik und funktionale Materialien</collection>
  </doc>
  <doc>
    <id>36902</id>
    <completedYear/>
    <publishedYear>2025</publishedYear>
    <thesisYearAccepted/>
    <language>eng</language>
    <pageFirst>8825</pageFirst>
    <pageLast>8834</pageLast>
    <pageNumber>10</pageNumber>
    <edition/>
    <issue/>
    <volume>20</volume>
    <type>articler</type>
    <publisherName>Springer</publisherName>
    <publisherPlace>New York, NY</publisherPlace>
    <creatingCorporation/>
    <contributingCorporation/>
    <belongsToBibliography>0</belongsToBibliography>
    <completedDate>2025-12-02</completedDate>
    <publishedDate>--</publishedDate>
    <thesisDateAccepted>--</thesisDateAccepted>
    <title language="eng">Optical response of titanium nitride plasmonic nanohole arrays : impact of square and hexagonal array geometry, pitch, and nanohole diameter</title>
    <abstract language="eng">Plasmonic nanohole arrays (NHAs) exhibit extraordinary optical transmission (EOT) evoked by resonant excitation of surface plasmons at an excitation wavelength, which is highly sensitive to changes in refractive index in the surrounding dielectric. This can enable the use of plasmonic NHAs in on-chip refractive index sensors. Such sensors can be realized on the cost-effective silicon platform by the integration of a plasmonic NHA and a Ge photodetector, provided that complementary metal–oxide–semiconductor (CMOS)-compatible materials are used for their fabrication. Titanium nitride (TiN) as a biocompatible and CMOS-compatible plasmonic transition metal nitride is well-suited for integration on the silicon platform; however, the comparatively large losses within the material require geometry optimization strategies in order to improve the optical properties of TiN NHAs for sensing. In this work, we investigated different TiN NHA geometries both in experiment and simulation. We extensively characterized square and hexagonal arrays with varying pitches and nanohole diameters and provide a detailed comparison of their optical properties. We also discuss characterization results for surface refractive index changes imposed by depositing a thin Al2O3 layer on top of the NHAs. While we do not observe a clear advantage of hexagonal arrays compared to square arrays for sensing, our results highlight the importance of geometry optimization for TiN NHAs integrated with devices.</abstract>
    <parentTitle language="eng">Plasmonics</parentTitle>
    <identifier type="url">https://link.springer.com/article/10.1007/s11468-025-02934-4</identifier>
    <identifier type="doi">10.1007/s11468-025-02934-4</identifier>
    <enrichment key="Fprofil">4 Künstliche Intelligenz und Sensorik / Artificial Intelligence and Sensor Technology</enrichment>
    <enrichment key="BTU">an der BTU erstellt / created at BTU</enrichment>
    <enrichment key="Publikationsweg">Open Access</enrichment>
    <enrichment key="opus.source">publish</enrichment>
    <licence>Creative Commons - CC BY - Namensnennung 4.0 International</licence>
    <author>
      <firstName>Sebastian</firstName>
      <lastName>Reiter</lastName>
    </author>
    <submitter>
      <firstName>Katrin</firstName>
      <lastName>Willhöft</lastName>
    </submitter>
    <author>
      <firstName>Markus</firstName>
      <lastName>Ratzke</lastName>
    </author>
    <author>
      <firstName>Paul-Gregor</firstName>
      <lastName>Nitsch</lastName>
    </author>
    <author>
      <firstName>Christian</firstName>
      <lastName>Mai</lastName>
    </author>
    <author>
      <firstName>Davide</firstName>
      <lastName>Spirito</lastName>
    </author>
    <author>
      <firstName>Agnieszka Anna</firstName>
      <lastName>Corley-Wiciak</lastName>
    </author>
    <author>
      <firstName>Christian</firstName>
      <lastName>Wenger</lastName>
    </author>
    <author>
      <firstName>Inga A.</firstName>
      <lastName>Fischer</lastName>
    </author>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>Plasmonic nanohole array</value>
    </subject>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>Titanium nitride</value>
    </subject>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>Hexagonal array</value>
    </subject>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>Square array</value>
    </subject>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>Nanohole diameters</value>
    </subject>
    <collection role="institutes" number="1504">FG Experimentalphysik und funktionale Materialien</collection>
    <collection role="institutes" number="1521">FG Halbleitermaterialien</collection>
  </doc>
  <doc>
    <id>27064</id>
    <completedYear/>
    <publishedYear>2021</publishedYear>
    <thesisYearAccepted/>
    <language>eng</language>
    <pageFirst/>
    <pageLast/>
    <pageNumber>17</pageNumber>
    <edition/>
    <issue>5</issue>
    <volume>10</volume>
    <type>articler</type>
    <publisherName/>
    <publisherPlace/>
    <creatingCorporation/>
    <contributingCorporation/>
    <belongsToBibliography>0</belongsToBibliography>
    <completedDate>2021-02-24</completedDate>
    <publishedDate>--</publishedDate>
    <thesisDateAccepted>--</thesisDateAccepted>
    <title language="eng">A Versatile, Voltage-Pulse Based Read and Programming Circuit for Multi-Level RRAM Cells</title>
    <abstract language="eng">In this work, we present an integrated read and programming circuit for Resistive Random Access Memory (RRAM) cells. Since there are a lot of different RRAM technologies in research and the process variations of this new memory technology often spread over a wide range of electrical properties, the proposed circuit focuses on versatility in order to be adaptable to different cell properties. The circuit is suitable for both read and programming operations based on voltage&#13;
pulses of flexible length and height. The implemented read method is based on evaluating the voltage drop over a measurement resistor and can distinguish up to eight different states, which are coded in binary, thereby realizing a digitization of the analog memory value. The circuit was fabricated in the 130 nm CMOS process line of IHP. The simulations were done using a physics-based, multi-level RRAM model. The measurement results prove the functionality of the read circuit and the programming system and demonstrate that the read system can distinguish up to eight different states with an overall resistance ratio of 7.9.</abstract>
    <parentTitle language="eng">Electronics</parentTitle>
    <identifier type="issn">2079-9292</identifier>
    <identifier type="doi">10.3390/electronics10050530</identifier>
    <enrichment key="BTU">an der BTU erstellt / created at BTU</enrichment>
    <enrichment key="Artikelnummer">530</enrichment>
    <enrichment key="opus.source">publish</enrichment>
    <enrichment key="Fprofil">4 Künstliche Intelligenz und Sensorik / Artificial Intelligence and Sensor Technology</enrichment>
    <author>
      <firstName>Stefan</firstName>
      <lastName>Pechmann</lastName>
    </author>
    <submitter>
      <firstName>Christian</firstName>
      <lastName>Wenger</lastName>
    </submitter>
    <author>
      <firstName>Timo</firstName>
      <lastName>Mai</lastName>
    </author>
    <author>
      <firstName>Matthias</firstName>
      <lastName>Völkel</lastName>
    </author>
    <author>
      <firstName>Mamathamba Kalishettyhalli</firstName>
      <lastName>Mahadevaiah</lastName>
    </author>
    <author>
      <firstName>Eduardo</firstName>
      <lastName>Pérez</lastName>
    </author>
    <author>
      <firstName>Emilio</firstName>
      <lastName>Perez-Bosch Quesada</lastName>
    </author>
    <author>
      <firstName>Marc</firstName>
      <lastName>Reichenbach</lastName>
    </author>
    <author>
      <firstName>Christian</firstName>
      <lastName>Wenger</lastName>
    </author>
    <author>
      <firstName>Amelie</firstName>
      <lastName>Hagelauer</lastName>
    </author>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>RRAM</value>
    </subject>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>Multilevel switching</value>
    </subject>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>Programming circuit</value>
    </subject>
    <collection role="institutes" number="1521">FG Halbleitermaterialien</collection>
  </doc>
  <doc>
    <id>28853</id>
    <completedYear/>
    <publishedYear>2022</publishedYear>
    <thesisYearAccepted/>
    <language>eng</language>
    <pageFirst/>
    <pageLast/>
    <pageNumber>14</pageNumber>
    <edition/>
    <issue>10</issue>
    <volume>11</volume>
    <type>articler</type>
    <publisherName/>
    <publisherPlace/>
    <creatingCorporation/>
    <contributingCorporation/>
    <belongsToBibliography>0</belongsToBibliography>
    <completedDate>2022-05-12</completedDate>
    <publishedDate>--</publishedDate>
    <thesisDateAccepted>--</thesisDateAccepted>
    <title language="eng">Modulating the Filamentary-Based Resistive Switching Properties of HfO2 Memristive Devices by Adding Al2O3 Layers</title>
    <abstract language="eng">The resistive switching properties of HfO2 based 1T-1R memristive devices are electrically modified by adding ultra-thin layers of Al2O3&#13;
into the memristive device. Three different types of memristive stacks are fabricated in the 130 nm CMOS technology of IHP. The switching properties of the memristive devices are discussed with respect to forming voltages, low resistance state and high resistance state characteristics and their variabilities. The experimental I–V characteristics of set and reset operations are evaluated by using the quantum point contact model. The properties of the conduction filament in the on and off states of the memristive devices are discussed with respect to the model parameters obtained from the QPC fit.</abstract>
    <parentTitle language="eng">Electronics : open access journal</parentTitle>
    <identifier type="issn">2079-9292</identifier>
    <identifier type="doi">10.3390/electronics11101540</identifier>
    <enrichment key="BTU">an der BTU erstellt / created at BTU</enrichment>
    <enrichment key="Artikelnummer">1540</enrichment>
    <enrichment key="opus.source">publish</enrichment>
    <enrichment key="Fprofil">4 Künstliche Intelligenz und Sensorik / Artificial Intelligence and Sensor Technology</enrichment>
    <author>
      <firstName>Mamathamba Kalishettyhalli</firstName>
      <lastName>Mahadevaiah</lastName>
    </author>
    <submitter>
      <firstName>Christian</firstName>
      <lastName>Wenger</lastName>
    </submitter>
    <author>
      <firstName>Eduardo</firstName>
      <lastName>Pérez</lastName>
    </author>
    <author>
      <firstName>Marco</firstName>
      <lastName>Lisker</lastName>
    </author>
    <author>
      <firstName>Markus Andreas</firstName>
      <lastName>Schubert</lastName>
    </author>
    <author>
      <firstName>Emilio</firstName>
      <lastName>Perez-Bosch Quesada</lastName>
    </author>
    <author>
      <firstName>Christian</firstName>
      <lastName>Wenger</lastName>
    </author>
    <author>
      <firstName>Andreas</firstName>
      <lastName>Mai</lastName>
    </author>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>RRAM</value>
    </subject>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>HfO2</value>
    </subject>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>filamentary switching</value>
    </subject>
    <collection role="institutes" number="1521">FG Halbleitermaterialien</collection>
  </doc>
  <doc>
    <id>34706</id>
    <completedYear/>
    <publishedYear>2024</publishedYear>
    <thesisYearAccepted/>
    <language>eng</language>
    <pageFirst/>
    <pageLast/>
    <pageNumber>9</pageNumber>
    <edition/>
    <issue/>
    <volume>97</volume>
    <type>articler</type>
    <publisherName>Springer Science and Business Media LLC</publisherName>
    <publisherPlace/>
    <creatingCorporation/>
    <contributingCorporation/>
    <belongsToBibliography>0</belongsToBibliography>
    <completedDate>2024-11-25</completedDate>
    <publishedDate>--</publishedDate>
    <thesisDateAccepted>--</thesisDateAccepted>
    <title language="eng">Optimization of technology processes for enhanced CMOS-integrated 1T-1R RRAM device performance</title>
    <abstract language="eng">Implementing artificial synapses that emulate the synaptic behavior observed in the brain is one of the most critical requirements for neuromorphic computing. Resistive random-access memories (RRAM) have been proposed as a candidate for artificial synaptic devices. For this applicability, RRAM device performance depends on the technology used to fabricate the metal–insulator–metal (MIM) stack and the technology chosen for the selector device. To analyze these dependencies, the integrated RRAM devices in a 4k-bit array are studied on a 200 mm wafer scale in this work. The RRAM devices are integrated into two different CMOS transistor technologies of IHP, namely 250 nm and 130 nm and the devices are compared in terms of their pristine state current. The devices in 130 nm technology have shown lower number of high pristine state current devices per die in comparison to the 250 nm technology. For the 130 nm technology, the forming voltage is reduced due to the decrease of HfO2   dielectric thickness from 8 nm to 5 nm. Additionally, 5% Al-doped 4 nm HfO2   dielectric displayed a similar reduction in forming voltage and a lower variation in the values. Finally, the multi-level switching between the dielectric layers in 250 nm and 130 nm technologies are compared, where 130 nm showed a more significant number of conductance levels of seven compared to only four levels observed in 250 nm technology.</abstract>
    <parentTitle language="eng">The European Physical Journal B</parentTitle>
    <identifier type="doi">10.1140/epjb/s10051-024-00821-1</identifier>
    <identifier type="issn">1434-6028</identifier>
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The devices in 130\u00a0nm technology have shown lower number of high pristine state current devices per die in comparison to the 250\u00a0nm technology. For the 130\u00a0nm technology, the forming voltage is reduced due to the decrease of &lt;jats:inline-formula&gt;&lt;jats:alternatives&gt;&lt;jats:tex-math&gt;$$\\hbox {HfO}_2$$&lt;\/jats:tex-math&gt;&lt;mml:math xmlns:mml=\"http:\/\/www.w3.org\/1998\/Math\/MathML\"&gt;\n                    &lt;mml:msub&gt;\n                      &lt;mml:mtext&gt;HfO&lt;\/mml:mtext&gt;\n                      &lt;mml:mn&gt;2&lt;\/mml:mn&gt;\n                    &lt;\/mml:msub&gt;\n                  &lt;\/mml:math&gt;&lt;\/jats:alternatives&gt;&lt;\/jats:inline-formula&gt; dielectric thickness from 8\u00a0nm to 5\u00a0nm. 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    <title language="eng">Optimized silicon nitride-spaced graphene electro-optic modulator with high efficiency and bandwidth</title>
    <abstract language="eng">Optical modulators with high modulation efficiency, large operational bandwidth, high-speed and low energy consumption is essential for the advancement of on-chip optical signal processing. To overcome the bandwidth-efficiency trade-off in graphene optical modulators, a buried silicon nitride waveguide-coupled double-layer graphene electro-absorption (EA) optical modulator has been proposed. In the proposed design, silicon nitride layer is also embedded between the two graphene layers as a dielectric spacer to enhance the graphene-light interaction. An extensive simulation has been performed to optimize the dielectric spacing layers between the two graphene for optimal device performance including the waveguide dimensions and optical modes profile. The simulated results show a high modulation efficiency of 1.1 dB/V and a modulation depth of 0.16 dB/µm, corresponding to a 15-dB extinction ratio for a 100 µm device at 1550 nm, with a 30 nm spacer and 12 V driving voltage. The proposed modulator achieves a 14 GHz bandwidth and operates over a 1050 nm broadband operation spectral range. The concurrent presence of high modulation bandwidth and efficiency renders these modulator designs highly viable for on-chip optical communication applications.</abstract>
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