<?xml version="1.0" encoding="utf-8"?>
<export-example>
  <doc>
    <id>17121</id>
    <completedYear/>
    <publishedYear>2013</publishedYear>
    <thesisYearAccepted/>
    <language>eng</language>
    <pageFirst/>
    <pageLast/>
    <pageNumber/>
    <edition/>
    <issue/>
    <volume/>
    <type>conferenceobject</type>
    <publisherName>Deutsche Physikalische Gesellschaft</publisherName>
    <publisherPlace>Bad Honnef</publisherPlace>
    <creatingCorporation/>
    <contributingCorporation/>
    <belongsToBibliography>0</belongsToBibliography>
    <completedDate>2016-09-15</completedDate>
    <publishedDate>--</publishedDate>
    <thesisDateAccepted>--</thesisDateAccepted>
    <title language="eng">Atomic layer deposition of Ga2O3 using Tri-methyl-Gallium and H2O</title>
    <abstract language="eng">Considering numerous applications such as transparent conducting oxides, gas sensors, photovoltaic applications, deep UV photo detectors, field effect transistors and  spintronics gallium oxide  (Ga2O3) has earned quite a lot of focus recently. Various techniques have already been demonstrated to  produce Ga2O3 naming evaporation, sputtering, pulsed laser deposition, chemical vapor deposition and atomic layer deposition (ALD). Among them, ALD gives  the possibility of controlling the thickness at the atomic level, good step coverage and delivers dense and homogeneous films. In this contribution, we report on the growth of ALD Ga2O3 using trimethylgallium (TMG) and H2O as metal and oxygen  precursors, respectively. We deposited thin Ga2O3 films on Si, TiO2, Al2O3 and RuO2 over a temperature range of 150-300°C and characterized  them by X-ray photo emission  spectroscopy and atomic force microscopy. From this study, we are able to discuss the influence of the temperature on the growth dynamics of Ga2O3 and its chemical composition.</abstract>
    <parentTitle language="deu">Verhandlungen der Deutschen Physikalischen Gesellschaft</parentTitle>
    <identifier type="url">http://www.dpg-verhandlungen.de/year/2013/conference/regensburg/part/ds/session/4/contribution/2?lang=de</identifier>
    <enrichment key="UBICOseries">Verhandlungen der Deutschen Physikalischen Gesellschaft ; Reihe 6, Band 48</enrichment>
    <enrichment key="BTU">an der BTU erstellt / created at BTU</enrichment>
    <author>
      <firstName>Sakeb Hasan</firstName>
      <lastName>Choudhury</lastName>
    </author>
    <submitter>
      <firstName>Karsten</firstName>
      <lastName>Henkel</lastName>
    </submitter>
    <author>
      <firstName>Massimo</firstName>
      <lastName>Tallarida</lastName>
    </author>
    <author>
      <firstName>Chittaranjan</firstName>
      <lastName>Das</lastName>
    </author>
    <author>
      <firstName>Dieter</firstName>
      <lastName>Schmeißer</lastName>
    </author>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>atomic layer deposition</value>
    </subject>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>Ga2O3</value>
    </subject>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>X-ray photoelectron spectroscopy (XPS)</value>
    </subject>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>Si, TiO2 , Al2O3 and RuO2 substrates</value>
    </subject>
    <collection role="institutes" number="1503">FG Angewandte Physik und Halbleiterspektroskopie</collection>
  </doc>
</export-example>
