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  <doc>
    <id>29047</id>
    <completedYear/>
    <publishedYear>2022</publishedYear>
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    <language>eng</language>
    <pageFirst>050901-1</pageFirst>
    <pageLast>050901-20</pageLast>
    <pageNumber/>
    <edition/>
    <issue>5</issue>
    <volume>7</volume>
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    <completedDate>2022-06-29</completedDate>
    <publishedDate>--</publishedDate>
    <thesisDateAccepted>--</thesisDateAccepted>
    <title language="eng">On-chip infrared photonics with Si-Ge-heterostructures: What is next?</title>
    <abstract language="eng">The integration of Ge on Si for photonics applications has reached a high level of maturity: Ge photodetectors are available on the Si platform in foundry processes, and Si/Ge heterostructure multiple quantum-well photodiodes are rapidly progressing toward applications in light modulation. These successes result from decades of development of high-quality material growth and integration, which, more recently, has sparked an increasingly broad field of photonic device research based on Si/Ge heterostructures that extends from quantum cascade lasers to sensors. Here, we highlight selected recent structure and device developments as well as possible future trends that are enabled by the maturity of the SiGe material platform</abstract>
    <parentTitle language="eng">APL Photonics</parentTitle>
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    <identifier type="doi">10.1063/5.0078608</identifier>
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    <author>
      <firstName>Inga Anita</firstName>
      <lastName>Fischer</lastName>
    </author>
    <submitter>
      <firstName>Katrin</firstName>
      <lastName>Gregor</lastName>
    </submitter>
    <author>
      <firstName>Moritz</firstName>
      <lastName>Brehm</lastName>
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    <author>
      <firstName>Monica</firstName>
      <lastName>De Seta</lastName>
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      <lastName>Isella</lastName>
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    <author>
      <firstName>Douglas J.</firstName>
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    </author>
    <author>
      <firstName>Michele</firstName>
      <lastName>Virgilio</lastName>
    </author>
    <author>
      <firstName>Giovanni</firstName>
      <lastName>Capellini</lastName>
    </author>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>Heterostructures</value>
    </subject>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>Photodetectors</value>
    </subject>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>Photonics</value>
    </subject>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>Nanowires</value>
    </subject>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>Plasmonics</value>
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    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>Epitaxy</value>
    </subject>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>Quantum wells</value>
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      <language>eng</language>
      <type>uncontrolled</type>
      <value>Lasers</value>
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    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>Sensors</value>
    </subject>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>Electronic band structure</value>
    </subject>
    <collection role="institutes" number="1504">FG Experimentalphysik und funktionale Materialien</collection>
  </doc>
  <doc>
    <id>25329</id>
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    <completedDate>2020-03-03</completedDate>
    <publishedDate>--</publishedDate>
    <thesisDateAccepted>--</thesisDateAccepted>
    <title language="eng">Composition analysis and transition energies of ultrathin Sn-rich GeSn quantum wells</title>
    <parentTitle language="eng">Physical Review Materials</parentTitle>
    <identifier type="doi">10.1103/PhysRevMaterials.4.024601</identifier>
    <identifier type="issn">2475-9953</identifier>
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    <author>
      <firstName>Inga Anita</firstName>
      <lastName>Fischer</lastName>
    </author>
    <submitter>
      <firstName>Marion</firstName>
      <lastName>Tülling</lastName>
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    <author>
      <firstName>Caterina J.</firstName>
      <lastName>Clausen</lastName>
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    <author>
      <firstName>Daniel</firstName>
      <lastName>Schwarz</lastName>
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    <author>
      <firstName>Peter</firstName>
      <lastName>Zaumseil</lastName>
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    <author>
      <firstName>Giovanni</firstName>
      <lastName>Capellini</lastName>
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      <firstName>Michele</firstName>
      <lastName>Virgilio</lastName>
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      <firstName>Maria Cecilia</firstName>
      <lastName>Da Silva Figueira</lastName>
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    <author>
      <firstName>Stefan</firstName>
      <lastName>Birner</lastName>
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    <author>
      <firstName>Sebastian</firstName>
      <lastName>Koelling</lastName>
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    <author>
      <firstName>Paul M.</firstName>
      <lastName>Koenraad</lastName>
    </author>
    <author>
      <firstName>Michael R. S.</firstName>
      <lastName>Huang</lastName>
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    <author>
      <firstName>Christoph T.</firstName>
      <lastName>Koch</lastName>
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    <author>
      <firstName>Torsten</firstName>
      <lastName>Wendav</lastName>
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      <firstName>Kurt</firstName>
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    <completedDate>2020-07-08</completedDate>
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    <title language="eng">Ge(Sn) nano-island/Si heterostructure photodetectors with plasmonic antennas</title>
    <parentTitle language="eng">Nanotechnology</parentTitle>
    <identifier type="doi">10.1088/1361-6528/ab91ef</identifier>
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    <author>
      <firstName>Viktoria</firstName>
      <lastName>Schlykow</lastName>
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    <submitter>
      <firstName>Marion</firstName>
      <lastName>Tülling</lastName>
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    <author>
      <firstName>Constanza Lucia</firstName>
      <lastName>Manganelli</lastName>
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    <author>
      <firstName>Friedhard</firstName>
      <lastName>Römer</lastName>
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    <author>
      <firstName>Caterina J.</firstName>
      <lastName>Clausen</lastName>
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    <author>
      <firstName>Lion</firstName>
      <lastName>Augel</lastName>
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      <firstName>Jens</firstName>
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      <firstName>Inga Anita</firstName>
      <lastName>Fischer</lastName>
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    <id>27292</id>
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    <publishedYear>2021</publishedYear>
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    <completedDate>2021-04-13</completedDate>
    <publishedDate>--</publishedDate>
    <thesisDateAccepted>--</thesisDateAccepted>
    <title language="eng">Raman shifts in MBE‐grown SixGe1 − x − ySny alloys with large Si content</title>
    <parentTitle language="eng">Journal of Raman Spectroscopy</parentTitle>
    <identifier type="doi">10.1002/jrs.6098</identifier>
    <identifier type="issn">1097-4555</identifier>
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    <author>
      <firstName>Jon</firstName>
      <lastName>Schlipf</lastName>
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    <submitter>
      <firstName>Marion</firstName>
      <lastName>Tülling</lastName>
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      <firstName>Henriette</firstName>
      <lastName>Tetzner</lastName>
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    <author>
      <firstName>Davide</firstName>
      <lastName>Spirito</lastName>
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    <author>
      <firstName>Constanza Lucia</firstName>
      <lastName>Manganelli</lastName>
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      <firstName>Giovanni</firstName>
      <lastName>Capellini</lastName>
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    <author>
      <firstName>Michael R. S.</firstName>
      <lastName>Huang</lastName>
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      <firstName>Christoph T.</firstName>
      <lastName>Koch</lastName>
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      <firstName>Caterina J.</firstName>
      <lastName>Clausen</lastName>
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    <author>
      <firstName>Ahmed</firstName>
      <lastName>Elsayed</lastName>
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      <firstName>Jörg</firstName>
      <lastName>Schulze</lastName>
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      <firstName>Inga Anita</firstName>
      <lastName>Fischer</lastName>
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    <collection role="institutes" number="1504">FG Experimentalphysik und funktionale Materialien</collection>
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  <doc>
    <id>27917</id>
    <completedYear/>
    <publishedYear>2021</publishedYear>
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    <issue>15</issue>
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    <completedDate>2021-11-15</completedDate>
    <publishedDate>--</publishedDate>
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    <title language="eng">Current leakage mechanisms related to threading dislocations in Ge-rich SiGe heterostructures grown on Si(001)</title>
    <parentTitle language="eng">Applied Physics Letters</parentTitle>
    <identifier type="doi">10.1063/5.0064477</identifier>
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    <identifier type="issn">0003-6951</identifier>
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      <firstName>Inga Anita</firstName>
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    <title language="eng">Unintentional p-type conductivity in intrinsic Ge-rich SiGe/Ge heterostructures grown on Si(001)</title>
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    <identifier type="doi">10.1063/5.0152962</identifier>
    <identifier type="issn">1077-3118</identifier>
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      <firstName>Henriette</firstName>
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      <firstName>Marion</firstName>
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      <lastName>Seifert</lastName>
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      <firstName>Marco</firstName>
      <lastName>Lisker</lastName>
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      <firstName>M. M.</firstName>
      <lastName>Mirza</lastName>
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    <author>
      <firstName>Inga Anita</firstName>
      <lastName>Fischer</lastName>
    </author>
    <author>
      <firstName>Douglas J.</firstName>
      <lastName>Paul</lastName>
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    <author>
      <firstName>Monica</firstName>
      <lastName>De Seta</lastName>
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    <author>
      <firstName>Giovanni</firstName>
      <lastName>Capellini</lastName>
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    <collection role="institutes" number="1504">FG Experimentalphysik und funktionale Materialien</collection>
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    <id>31150</id>
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    <publishedYear>2023</publishedYear>
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    <edition/>
    <issue/>
    <volume>165</volume>
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    <completedDate>2023-07-03</completedDate>
    <publishedDate>--</publishedDate>
    <thesisDateAccepted>--</thesisDateAccepted>
    <title language="eng">MBE-based growth of Sn-rich quantum wells and dots at low Sn deposition rates</title>
    <parentTitle language="eng">Materials Science in Semiconductor Processing</parentTitle>
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    <author>
      <firstName>Ahsan</firstName>
      <lastName>Hayat</lastName>
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      <firstName>Marion</firstName>
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      <firstName>Davide</firstName>
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    <author>
      <firstName>Agnieszka Anna</firstName>
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      <lastName>Masood</lastName>
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      <firstName>Felix</firstName>
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      <firstName>Markus</firstName>
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      <firstName>Giovanni</firstName>
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    <author>
      <firstName>Inga Anita</firstName>
      <lastName>Fischer</lastName>
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