<?xml version="1.0" encoding="utf-8"?>
<export-example>
  <doc>
    <id>16245</id>
    <completedYear/>
    <publishedYear>2015</publishedYear>
    <thesisYearAccepted/>
    <language>eng</language>
    <pageFirst>19219</pageFirst>
    <pageLast>19225</pageLast>
    <pageNumber/>
    <edition/>
    <issue>34</issue>
    <volume>7</volume>
    <type>articler</type>
    <publisherName/>
    <publisherPlace/>
    <creatingCorporation/>
    <contributingCorporation/>
    <belongsToBibliography>0</belongsToBibliography>
    <completedDate>2016-05-19</completedDate>
    <publishedDate>--</publishedDate>
    <thesisDateAccepted>--</thesisDateAccepted>
    <title language="eng">Engineering coalescence by annealing of 3D Ge microstructures into high-qualtiy suspended layers on Si</title>
    <parentTitle language="eng">ACS Applied Materials and Interfaces</parentTitle>
    <identifier type="issn">1944-8244</identifier>
    <identifier type="doi">10.1021/acsami.5b05054</identifier>
    <enrichment key="BTU">an der BTU erstellt / created at BTU</enrichment>
    <author>
      <firstName>Marco</firstName>
      <lastName>Salvalaglio</lastName>
    </author>
    <submitter>
      <firstName>Marion</firstName>
      <lastName>Tülling</lastName>
    </submitter>
    <author>
      <firstName>Roberto</firstName>
      <lastName>Bergamaschini</lastName>
    </author>
    <author>
      <firstName>Fabio</firstName>
      <lastName>Isa</lastName>
    </author>
    <author>
      <firstName>Andrea</firstName>
      <lastName>Scaccabarozi</lastName>
    </author>
    <author>
      <firstName>Giovanni</firstName>
      <lastName>Isella</lastName>
    </author>
    <author>
      <firstName>Rainer</firstName>
      <lastName>Backofen</lastName>
    </author>
    <author>
      <firstName>Axel</firstName>
      <lastName>Voigt</lastName>
    </author>
    <author>
      <firstName>Francesco</firstName>
      <lastName>Montalenti</lastName>
    </author>
    <author>
      <firstName>Giovanni</firstName>
      <lastName>Capellini</lastName>
    </author>
    <author>
      <firstName>Anna</firstName>
      <lastName>Marzegalli</lastName>
    </author>
    <author>
      <firstName>Thomas</firstName>
      <lastName>Schroeder</lastName>
    </author>
    <author>
      <firstName>Hans von</firstName>
      <lastName>Känel</lastName>
    </author>
    <author>
      <firstName>Leo</firstName>
      <lastName>Miglio</lastName>
    </author>
    <collection role="institutes" number="1521">FG Halbleitermaterialien</collection>
  </doc>
  <doc>
    <id>29047</id>
    <completedYear/>
    <publishedYear>2022</publishedYear>
    <thesisYearAccepted/>
    <language>eng</language>
    <pageFirst>050901-1</pageFirst>
    <pageLast>050901-20</pageLast>
    <pageNumber/>
    <edition/>
    <issue>5</issue>
    <volume>7</volume>
    <type>articler</type>
    <publisherName/>
    <publisherPlace/>
    <creatingCorporation/>
    <contributingCorporation/>
    <belongsToBibliography>0</belongsToBibliography>
    <completedDate>2022-06-29</completedDate>
    <publishedDate>--</publishedDate>
    <thesisDateAccepted>--</thesisDateAccepted>
    <title language="eng">On-chip infrared photonics with Si-Ge-heterostructures: What is next?</title>
    <abstract language="eng">The integration of Ge on Si for photonics applications has reached a high level of maturity: Ge photodetectors are available on the Si platform in foundry processes, and Si/Ge heterostructure multiple quantum-well photodiodes are rapidly progressing toward applications in light modulation. These successes result from decades of development of high-quality material growth and integration, which, more recently, has sparked an increasingly broad field of photonic device research based on Si/Ge heterostructures that extends from quantum cascade lasers to sensors. Here, we highlight selected recent structure and device developments as well as possible future trends that are enabled by the maturity of the SiGe material platform</abstract>
    <parentTitle language="eng">APL Photonics</parentTitle>
    <identifier type="url">https://aip.scitation.org/doi/10.1063/5.0078608</identifier>
    <identifier type="doi">10.1063/5.0078608</identifier>
    <identifier type="issn">2378-0967</identifier>
    <enrichment key="BTU">an der BTU erstellt / created at BTU</enrichment>
    <enrichment key="Artikelnummer">050901</enrichment>
    <enrichment key="opus.source">publish</enrichment>
    <enrichment key="opus.doi.autoCreate">false</enrichment>
    <enrichment key="opus.urn.autoCreate">false</enrichment>
    <enrichment key="Fprofil">4 Künstliche Intelligenz und Sensorik / Artificial Intelligence and Sensor Technology</enrichment>
    <author>
      <firstName>Inga Anita</firstName>
      <lastName>Fischer</lastName>
    </author>
    <submitter>
      <firstName>Katrin</firstName>
      <lastName>Gregor</lastName>
    </submitter>
    <author>
      <firstName>Moritz</firstName>
      <lastName>Brehm</lastName>
    </author>
    <author>
      <firstName>Monica</firstName>
      <lastName>De Seta</lastName>
    </author>
    <author>
      <firstName>Giovanni</firstName>
      <lastName>Isella</lastName>
    </author>
    <author>
      <firstName>Douglas J.</firstName>
      <lastName>Paul</lastName>
    </author>
    <author>
      <firstName>Michele</firstName>
      <lastName>Virgilio</lastName>
    </author>
    <author>
      <firstName>Giovanni</firstName>
      <lastName>Capellini</lastName>
    </author>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>Heterostructures</value>
    </subject>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>Photodetectors</value>
    </subject>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>Photonics</value>
    </subject>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>Nanowires</value>
    </subject>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>Plasmonics</value>
    </subject>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>Epitaxy</value>
    </subject>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>Quantum wells</value>
    </subject>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>Lasers</value>
    </subject>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>Sensors</value>
    </subject>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>Electronic band structure</value>
    </subject>
    <collection role="institutes" number="1504">FG Experimentalphysik und funktionale Materialien</collection>
  </doc>
  <doc>
    <id>9299</id>
    <completedYear/>
    <publishedYear>2012</publishedYear>
    <thesisYearAccepted/>
    <language>eng</language>
    <pageFirst/>
    <pageLast/>
    <pageNumber/>
    <edition/>
    <issue>7</issue>
    <volume>111</volume>
    <type>articler</type>
    <publisherName/>
    <publisherPlace/>
    <creatingCorporation/>
    <contributingCorporation/>
    <belongsToBibliography>0</belongsToBibliography>
    <completedDate>2013-08-21</completedDate>
    <publishedDate>--</publishedDate>
    <thesisDateAccepted>--</thesisDateAccepted>
    <title language="eng">High temperature x-ray diffraction measurements on Ge/Si(001) heterostructures: a study on the residual tensile strain</title>
    <parentTitle language="eng">Journal of Applied Physics</parentTitle>
    <identifier type="doi">10.1063/1.3702443</identifier>
    <identifier type="issn">0021-8979</identifier>
    <enrichment key="BTU">an der BTU erstellt / created at BTU</enrichment>
    <author>
      <firstName>Giovanni</firstName>
      <lastName>Capellini</lastName>
    </author>
    <submitter>
      <firstName>Marion</firstName>
      <lastName>Borrmann</lastName>
    </submitter>
    <author>
      <firstName>Monica</firstName>
      <lastName>De Seta</lastName>
    </author>
    <author>
      <firstName>Peter</firstName>
      <lastName>Zaumseil</lastName>
    </author>
    <author>
      <firstName>Grzegorz</firstName>
      <lastName>Kozłowski</lastName>
    </author>
    <author>
      <firstName>Thomas</firstName>
      <lastName>Schroeder</lastName>
    </author>
    <collection role="old_institute" number="01050">LS Halbleitermaterialien</collection>
    <collection role="institutes" number="1521">FG Halbleitermaterialien</collection>
  </doc>
  <doc>
    <id>10367</id>
    <completedYear/>
    <publishedYear>2013</publishedYear>
    <thesisYearAccepted/>
    <language>eng</language>
    <pageFirst>013513-1</pageFirst>
    <pageLast>013513-6</pageLast>
    <pageNumber/>
    <edition/>
    <issue>1</issue>
    <volume>113</volume>
    <type>articler</type>
    <publisherName/>
    <publisherPlace/>
    <creatingCorporation/>
    <contributingCorporation/>
    <belongsToBibliography>0</belongsToBibliography>
    <completedDate>2014-03-11</completedDate>
    <publishedDate>--</publishedDate>
    <thesisDateAccepted>--</thesisDateAccepted>
    <title language="eng">Tensile strained Ge layers obtained via Si-CMOS compatible approach</title>
    <parentTitle language="eng">Journal of Applied Physics</parentTitle>
    <enrichment key="BTU">an der BTU erstellt / created at BTU</enrichment>
    <author>
      <firstName>Giovanni</firstName>
      <lastName>Capellini</lastName>
    </author>
    <submitter>
      <firstName>Marion</firstName>
      <lastName>Borrmann</lastName>
    </submitter>
    <author>
      <firstName>Grzegorz</firstName>
      <lastName>Kozłowski</lastName>
    </author>
    <author>
      <firstName>Yuji</firstName>
      <lastName>Yamamoto</lastName>
    </author>
    <author>
      <firstName>Marco</firstName>
      <lastName>Lisker</lastName>
    </author>
    <author>
      <firstName>Bernd</firstName>
      <lastName>Tillack</lastName>
    </author>
    <author>
      <firstName>A.</firstName>
      <lastName>Ghrib</lastName>
    </author>
    <author>
      <firstName>M. de</firstName>
      <lastName>Kersauson</lastName>
    </author>
    <author>
      <firstName>M.</firstName>
      <lastName>El Kurdi</lastName>
    </author>
    <author>
      <firstName>P.</firstName>
      <lastName>Boucaud</lastName>
    </author>
    <author>
      <firstName>Thomas</firstName>
      <lastName>Schroeder</lastName>
    </author>
    <collection role="old_institute" number="01050">LS Halbleitermaterialien</collection>
    <collection role="institutes" number="1521">FG Halbleitermaterialien</collection>
  </doc>
  <doc>
    <id>11546</id>
    <completedYear/>
    <publishedYear>2013</publishedYear>
    <thesisYearAccepted/>
    <language>eng</language>
    <pageFirst>243102</pageFirst>
    <pageLast>243102-11</pageLast>
    <pageNumber/>
    <edition/>
    <issue>24</issue>
    <volume>114</volume>
    <type>articler</type>
    <publisherName/>
    <publisherPlace/>
    <creatingCorporation/>
    <contributingCorporation/>
    <belongsToBibliography>0</belongsToBibliography>
    <completedDate>2014-07-04</completedDate>
    <publishedDate>--</publishedDate>
    <thesisDateAccepted>--</thesisDateAccepted>
    <title language="eng">Photoluminescence, recombination rate, and gain spectra in optically excited n-type and tensile strained germanium layers</title>
    <parentTitle language="eng">Journal of Applied Physics</parentTitle>
    <identifier type="issn">0021-8979</identifier>
    <enrichment key="BTU">an der BTU erstellt / created at BTU</enrichment>
    <author>
      <firstName>Michele</firstName>
      <lastName>Virgilio</lastName>
    </author>
    <submitter>
      <firstName>Marion</firstName>
      <lastName>Borrmann</lastName>
    </submitter>
    <author>
      <firstName>Constanza Lucia</firstName>
      <lastName>Manganelli</lastName>
    </author>
    <author>
      <firstName>G.</firstName>
      <lastName>Grosso</lastName>
    </author>
    <author>
      <firstName>Thomas</firstName>
      <lastName>Schroeder</lastName>
    </author>
    <author>
      <firstName>Giovanni</firstName>
      <lastName>Capellini</lastName>
    </author>
    <collection role="old_institute" number="01050">LS Halbleitermaterialien</collection>
    <collection role="institutes" number="1521">FG Halbleitermaterialien</collection>
  </doc>
  <doc>
    <id>15713</id>
    <completedYear/>
    <publishedYear>2015</publishedYear>
    <thesisYearAccepted/>
    <language>eng</language>
    <pageFirst>045306</pageFirst>
    <pageLast/>
    <pageNumber/>
    <edition/>
    <issue/>
    <volume>117</volume>
    <type>articler</type>
    <publisherName/>
    <publisherPlace/>
    <creatingCorporation/>
    <contributingCorporation/>
    <belongsToBibliography>0</belongsToBibliography>
    <completedDate>2016-04-21</completedDate>
    <publishedDate>--</publishedDate>
    <thesisDateAccepted>--</thesisDateAccepted>
    <title language="eng">A very low temperature epi-cleaning process for Ge / GeSn heterostructures</title>
    <parentTitle language="eng">Journal of Applied Physics</parentTitle>
    <identifier type="doi">10.1063/1.4906616</identifier>
    <identifier type="issn">1089-7550</identifier>
    <enrichment key="BTU">an der BTU erstellt / created at BTU</enrichment>
    <author>
      <firstName>L.</firstName>
      <lastName>Di Gaspare</lastName>
    </author>
    <submitter>
      <firstName>Marion</firstName>
      <lastName>Tülling</lastName>
    </submitter>
    <author>
      <firstName>D.</firstName>
      <lastName>Sabbagh</lastName>
    </author>
    <author>
      <firstName>Monica</firstName>
      <lastName>De Seta</lastName>
    </author>
    <author>
      <firstName>A.</firstName>
      <lastName>Sodo</lastName>
    </author>
    <author>
      <firstName>S.</firstName>
      <lastName>Wirths</lastName>
    </author>
    <author>
      <firstName>Dan</firstName>
      <lastName>Buca</lastName>
    </author>
    <author>
      <firstName>Peter</firstName>
      <lastName>Zaumseil</lastName>
    </author>
    <author>
      <firstName>Thomas</firstName>
      <lastName>Schroeder</lastName>
    </author>
    <author>
      <firstName>Giovanni</firstName>
      <lastName>Capellini</lastName>
    </author>
    <collection role="institutes" number="1521">FG Halbleitermaterialien</collection>
  </doc>
  <doc>
    <id>15714</id>
    <completedYear/>
    <publishedYear>2015</publishedYear>
    <thesisYearAccepted/>
    <language>eng</language>
    <pageFirst>061107-1</pageFirst>
    <pageLast>061107-5</pageLast>
    <pageNumber/>
    <edition/>
    <issue/>
    <volume>106</volume>
    <type>articler</type>
    <publisherName/>
    <publisherPlace/>
    <creatingCorporation/>
    <contributingCorporation/>
    <belongsToBibliography>0</belongsToBibliography>
    <completedDate>2016-04-21</completedDate>
    <publishedDate>--</publishedDate>
    <thesisDateAccepted>--</thesisDateAccepted>
    <title language="eng">Non-uniform depth distributions of Sn concentration induced by Sn migration and desorption during GeSnSi layer formation</title>
    <parentTitle language="eng">Applied Physics Letters</parentTitle>
    <identifier type="doi">10.1063/1.4908121</identifier>
    <identifier type="issn">1077-3118</identifier>
    <enrichment key="BTU">an der BTU erstellt / created at BTU</enrichment>
    <author>
      <firstName>Noriyuki</firstName>
      <lastName>Taoka</lastName>
    </author>
    <submitter>
      <firstName>Marion</firstName>
      <lastName>Tülling</lastName>
    </submitter>
    <author>
      <firstName>Takanori</firstName>
      <lastName>Asano</lastName>
    </author>
    <author>
      <firstName>Takashi</firstName>
      <lastName>Yamaha</lastName>
    </author>
    <author>
      <firstName>Tatsuya</firstName>
      <lastName>Terashima</lastName>
    </author>
    <author>
      <firstName>Osamu</firstName>
      <lastName>Nakatsuka</lastName>
    </author>
    <author>
      <firstName>Ioan</firstName>
      <lastName>Costina</lastName>
    </author>
    <author>
      <firstName>Peter</firstName>
      <lastName>Zaumseil</lastName>
    </author>
    <author>
      <firstName>Giovanni</firstName>
      <lastName>Capellini</lastName>
    </author>
    <author>
      <firstName>Shigeaki</firstName>
      <lastName>Zaima</lastName>
    </author>
    <author>
      <firstName>Thomas</firstName>
      <lastName>Schroeder</lastName>
    </author>
    <collection role="institutes" number="1521">FG Halbleitermaterialien</collection>
  </doc>
  <doc>
    <id>15715</id>
    <completedYear/>
    <publishedYear>2015</publishedYear>
    <thesisYearAccepted/>
    <language>eng</language>
    <pageFirst>071902-1</pageFirst>
    <pageLast>071902-4</pageLast>
    <pageNumber/>
    <edition/>
    <issue/>
    <volume>106</volume>
    <type>articler</type>
    <publisherName/>
    <publisherPlace/>
    <creatingCorporation/>
    <contributingCorporation/>
    <belongsToBibliography>0</belongsToBibliography>
    <completedDate>2016-04-21</completedDate>
    <publishedDate>--</publishedDate>
    <thesisDateAccepted>--</thesisDateAccepted>
    <title language="eng">Strain and Lattice Orientation Distribution in SiN/Ge CMOS Compatible Light Emitters Microstructures by Quick X-ray Nano-diffraction Microscopy</title>
    <parentTitle language="eng">Applied Physics Letters</parentTitle>
    <identifier type="doi">10.1063/1.4909529</identifier>
    <identifier type="issn">1077-3118</identifier>
    <enrichment key="BTU">an der BTU erstellt / created at BTU</enrichment>
    <author>
      <firstName>Gilbert A.</firstName>
      <lastName>Chahine</lastName>
    </author>
    <submitter>
      <firstName>Marion</firstName>
      <lastName>Tülling</lastName>
    </submitter>
    <author>
      <firstName>Marvin Hartwig</firstName>
      <lastName>Zöllner</lastName>
    </author>
    <author>
      <firstName>Marie-Ingrid</firstName>
      <lastName>Richard</lastName>
    </author>
    <author>
      <firstName>G.</firstName>
      <lastName>Subhajit</lastName>
    </author>
    <author>
      <firstName>Peter</firstName>
      <lastName>Zaumseil</lastName>
    </author>
    <author>
      <firstName>Giovanni</firstName>
      <lastName>Capellini</lastName>
    </author>
    <author>
      <firstName>Thomas</firstName>
      <lastName>Schroeder</lastName>
    </author>
    <author>
      <firstName>Tobias U.</firstName>
      <lastName>Schülli</lastName>
    </author>
    <collection role="institutes" number="1521">FG Halbleitermaterialien</collection>
  </doc>
  <doc>
    <id>15717</id>
    <completedYear/>
    <publishedYear>2015</publishedYear>
    <thesisYearAccepted/>
    <language>eng</language>
    <pageFirst>5930</pageFirst>
    <pageLast>5940</pageLast>
    <pageNumber/>
    <edition/>
    <issue>5</issue>
    <volume>23</volume>
    <type>articler</type>
    <publisherName/>
    <publisherPlace/>
    <creatingCorporation/>
    <contributingCorporation/>
    <belongsToBibliography>0</belongsToBibliography>
    <completedDate>2016-04-21</completedDate>
    <publishedDate>--</publishedDate>
    <thesisDateAccepted>--</thesisDateAccepted>
    <title language="eng">CMOS-compatible, modulator concept based on strain-induced refractive-index modulation</title>
    <parentTitle language="eng">Optics Express</parentTitle>
    <identifier type="doi">10.1364/OE.23.005930</identifier>
    <identifier type="issn">1094-4087</identifier>
    <enrichment key="BTU">an der BTU erstellt / created at BTU</enrichment>
    <author>
      <firstName>Michele</firstName>
      <lastName>Virgilio</lastName>
    </author>
    <submitter>
      <firstName>Marion</firstName>
      <lastName>Tülling</lastName>
    </submitter>
    <author>
      <firstName>Bernd</firstName>
      <lastName>Witzigmann</lastName>
    </author>
    <author>
      <firstName>Gabriele</firstName>
      <lastName>Bolognini</lastName>
    </author>
    <author>
      <firstName>Subhajit</firstName>
      <lastName>Guha</lastName>
    </author>
    <author>
      <firstName>Thomas</firstName>
      <lastName>Schröder</lastName>
    </author>
    <author>
      <firstName>Giovanni</firstName>
      <lastName>Capellini</lastName>
    </author>
    <collection role="institutes" number="1521">FG Halbleitermaterialien</collection>
  </doc>
  <doc>
    <id>15724</id>
    <completedYear/>
    <publishedYear>2015</publishedYear>
    <thesisYearAccepted/>
    <language>eng</language>
    <pageFirst>155701</pageFirst>
    <pageLast/>
    <pageNumber/>
    <edition/>
    <issue>15</issue>
    <volume>26</volume>
    <type>articler</type>
    <publisherName/>
    <publisherPlace/>
    <creatingCorporation/>
    <contributingCorporation/>
    <belongsToBibliography>0</belongsToBibliography>
    <completedDate>2016-04-21</completedDate>
    <publishedDate>--</publishedDate>
    <thesisDateAccepted>--</thesisDateAccepted>
    <title language="eng">Ba termination of Ge(001) studied with STM</title>
    <parentTitle language="eng">Nanotechnology</parentTitle>
    <identifier type="doi">10.1088/0957-4484/26/15/155701</identifier>
    <identifier type="issn">1361-6528</identifier>
    <identifier type="issn">0957-4484</identifier>
    <enrichment key="BTU">an der BTU erstellt / created at BTU</enrichment>
    <author>
      <firstName>Wojciech</firstName>
      <lastName>Koczorowski</lastName>
    </author>
    <submitter>
      <firstName>Marion</firstName>
      <lastName>Tülling</lastName>
    </submitter>
    <author>
      <firstName>Tomasz</firstName>
      <lastName>Grzela</lastName>
    </author>
    <author>
      <firstName>M. W.</firstName>
      <lastName>Radny</lastName>
    </author>
    <author>
      <firstName>S. R.</firstName>
      <lastName>Schofield</lastName>
    </author>
    <author>
      <firstName>Giovanni</firstName>
      <lastName>Capellini</lastName>
    </author>
    <author>
      <firstName>Ryszard</firstName>
      <lastName>Czajka</lastName>
    </author>
    <author>
      <firstName>Thomas</firstName>
      <lastName>Schröder</lastName>
    </author>
    <author>
      <firstName>Neil J.</firstName>
      <lastName>Curson</lastName>
    </author>
    <collection role="institutes" number="1521">FG Halbleitermaterialien</collection>
  </doc>
</export-example>
