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    <title language="eng">Tensile strained Ge layers obtained via Si-CMOS compatible approach</title>
    <parentTitle language="eng">Journal of Applied Physics</parentTitle>
    <enrichment key="BTU">an der BTU erstellt / created at BTU</enrichment>
    <author>
      <firstName>Giovanni</firstName>
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      <firstName>A.</firstName>
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      <firstName>Marvin Hartwig</firstName>
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    <title language="eng">Radiative and non-radiative recombinations in tensile strained Ge microstrips: Photoluminescence experiments and modeling</title>
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    <title language="eng">Misfit dislocation-free epitaxial growth of SiGe on compliant nanostructured Silicon</title>
    <parentTitle language="eng">Solid State Phenomena</parentTitle>
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    <title language="eng">RP-CVD growth of isolated Ge crystals and suspended layers on micrometric Si pillars</title>
    <parentTitle language="eng">ACS Applied Materials and Interfaces</parentTitle>
    <identifier type="issn">1944-8244</identifier>
    <identifier type="issn">1944-8252</identifier>
    <identifier type="doi">10.1021/acsami.6b07694</identifier>
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      <firstName>Marion</firstName>
      <lastName>Tülling</lastName>
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    <author>
      <firstName>Giovanni</firstName>
      <lastName>Capellini</lastName>
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    <author>
      <firstName>Yuji</firstName>
      <lastName>Yamamoto</lastName>
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    <author>
      <firstName>Peter</firstName>
      <lastName>Zaumseil</lastName>
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    <author>
      <firstName>Markus Andreas</firstName>
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    <publishedYear>2016</publishedYear>
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    <pageFirst>202102</pageFirst>
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    <pageNumber/>
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    <title language="eng">Selective growth of fully relaxed GeSn nano-islands by nanoheteroepitaxy on patterned Si(001)</title>
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    <identifier type="issn">1077-3118</identifier>
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      <firstName>Marion</firstName>
      <lastName>Tülling</lastName>
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    <author>
      <firstName>Wolfgang Matthias</firstName>
      <lastName>Klesse</lastName>
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    <author>
      <firstName>Gang</firstName>
      <lastName>Niu</lastName>
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    <author>
      <firstName>Noriyuki</firstName>
      <lastName>Taoka</lastName>
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      <firstName>Yuji</firstName>
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      <firstName>M. R.</firstName>
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      <firstName>Hans von</firstName>
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      <firstName>Giovanni</firstName>
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    <pageLast/>
    <pageNumber/>
    <edition/>
    <issue>24</issue>
    <volume>122</volume>
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    <contributingCorporation/>
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    <completedDate>2023-07-03</completedDate>
    <publishedDate>--</publishedDate>
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    <title language="eng">Unintentional p-type conductivity in intrinsic Ge-rich SiGe/Ge heterostructures grown on Si(001)</title>
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    <enrichment key="opus.source">publish</enrichment>
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    <enrichment key="Fprofil">4 Künstliche Intelligenz und Sensorik / Artificial Intelligence and Sensor Technology</enrichment>
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      <firstName>Marion</firstName>
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      <firstName>M. M.</firstName>
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      <firstName>Inga Anita</firstName>
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      <firstName>Douglas J.</firstName>
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  </doc>
</export-example>
