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    <completedDate>2014-03-04</completedDate>
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    <title language="eng">Effect of back-gate on contact resistance and on channel conductance in graphene-based field-effect transistors</title>
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    <title language="eng">Observation of field emission from GeSn nanoparticles epitaxially grown on silicon nanotip arrays</title>
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      <firstName>Marion</firstName>
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      <firstName>Maurizio</firstName>
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      <firstName>Gang</firstName>
      <lastName>Niu</lastName>
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    <author>
      <firstName>Viktoria</firstName>
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      <firstName>Filippo</firstName>
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  <doc>
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    <title language="eng">Graphene field effect transistors with Niobium contacts and asymmetric transfer characteristics</title>
    <parentTitle language="eng">Nanotechnology</parentTitle>
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    <identifier type="issn">0957-4484</identifier>
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      <firstName>Giovanni</firstName>
      <lastName>Carapella</lastName>
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      <firstName>Laura</firstName>
      <lastName>Iemmo</lastName>
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      <firstName>Grzegorz</firstName>
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    <collection role="institutes" number="1521">FG Halbleitermaterialien</collection>
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</export-example>
