<?xml version="1.0" encoding="utf-8"?>
<export-example>
  <doc>
    <id>11685</id>
    <completedYear/>
    <publishedYear>2014</publishedYear>
    <thesisYearAccepted/>
    <language>eng</language>
    <pageFirst>1476</pageFirst>
    <pageLast>1480</pageLast>
    <pageNumber/>
    <edition/>
    <issue>9-10</issue>
    <volume>11</volume>
    <type>articler</type>
    <publisherName/>
    <publisherPlace/>
    <creatingCorporation/>
    <contributingCorporation/>
    <belongsToBibliography>0</belongsToBibliography>
    <completedDate>2014-09-02</completedDate>
    <publishedDate>--</publishedDate>
    <thesisDateAccepted>--</thesisDateAccepted>
    <title language="eng">Electronic structure of amorphous ZnO films</title>
    <abstract language="eng">We use resonant photoemission spectroscopy (resPES) to study the electronic properties of amorphous ZnO (a-ZnO) layers. We report on the core levels, the valence band (VB) PES data, and the X-ray absorption (XAS) data which we use for the conduction band (CB) density of states. From these results we are able to derive the partial density of states &#13;
(pDOS) of O2p and Zn4s4p states in the VB and CB, respectively as well as a band scheme. At the O1s resonance we observe a band of localized defect states which is located between the Fermi energy and the CBM. At the Zn2p edge the XAS data indicate that localized Zn4s4p states are involved in the DOS starting already at the Fermi energy.</abstract>
    <parentTitle language="eng">Physica Status Solidi C</parentTitle>
    <identifier type="doi">10.1002/pssc.201400010</identifier>
    <identifier type="issn">1610-1642</identifier>
    <enrichment key="BTU">an der BTU erstellt / created at BTU</enrichment>
    <author>
      <firstName>Dieter</firstName>
      <lastName>Schmeißer</lastName>
    </author>
    <submitter>
      <firstName>Karsten</firstName>
      <lastName>Henkel</lastName>
    </submitter>
    <author>
      <firstName>Jörg</firstName>
      <lastName>Haeberle</lastName>
    </author>
    <author>
      <firstName>Pedro</firstName>
      <lastName>Barquinha</lastName>
    </author>
    <author>
      <firstName>Diana</firstName>
      <lastName>Gaspar</lastName>
    </author>
    <author>
      <firstName>Luís</firstName>
      <lastName>Pereira</lastName>
    </author>
    <author>
      <firstName>Rodrigo</firstName>
      <lastName>Martins</lastName>
    </author>
    <author>
      <firstName>Elvira</firstName>
      <lastName>Fortunato</lastName>
    </author>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>a-ZnO thin films</value>
    </subject>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>intrinsic defects</value>
    </subject>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>resonant PES</value>
    </subject>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>amorphous oxide semiconductors (AOS)</value>
    </subject>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>transparent conducting oxides (TCO)</value>
    </subject>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>charge transfer</value>
    </subject>
    <collection role="old_institute" number="01005">LS Angewandte Physik / Sensorik</collection>
    <collection role="institutes" number="1503">FG Angewandte Physik und Halbleiterspektroskopie</collection>
  </doc>
  <doc>
    <id>15404</id>
    <completedYear/>
    <publishedYear>2014</publishedYear>
    <thesisYearAccepted/>
    <language>eng</language>
    <pageFirst/>
    <pageLast/>
    <pageNumber/>
    <edition/>
    <issue/>
    <volume/>
    <type>conferenceobject</type>
    <publisherName>Deutsche Physikalische Gesellschaft</publisherName>
    <publisherPlace>Bad Honnef</publisherPlace>
    <creatingCorporation/>
    <contributingCorporation/>
    <belongsToBibliography>0</belongsToBibliography>
    <completedDate>2016-04-11</completedDate>
    <publishedDate>--</publishedDate>
    <thesisDateAccepted>--</thesisDateAccepted>
    <title language="eng">A spectroscopic comparison of AOS thin films and TCO single crystals</title>
    <abstract language="eng">Amorphous oxide semiconductors (AOS) and transparent conductive oxides (TCO) are today one of most attractive fields of research in many industrial products, like e.g. high definition, low cost, transparent, and flexible displays. We got the unique possibility to measure a-GIZO and a-SnOx thin films and compare their electronic properties with those of In2O3, Ga2O3, ZnO, and SnO2 single crystals. We use resPES to study the electronic properties. We report on the core levels, the VB PES data, partial Integrated Yield (pIY) and the XAS absorption data. From these we are able to derive the elemental ratio, the pDOS as well as the band scheme. At the O1s resonance we observe multiple Auger processes from which we deduce that a band of localized defect states is located between the Fermi energy and the CBM. The resonant profiles taken at the corresponding metal edges indicate that metal states are involved in the DOS.</abstract>
    <parentTitle language="deu">Verhandlungen der Deutschen Physikalischen Gesellschaft</parentTitle>
    <identifier type="url">http://www.dpg-verhandlungen.de/year/2014/conference/dresden/part/hl/session/107/contribution/15?lang=en</identifier>
    <enrichment key="BTU">an der BTU erstellt / created at BTU</enrichment>
    <enrichment key="UBICOseries">Verhandlungen der Deutschen Physikalischen Gesellschaft, Reihe 6, Band 49</enrichment>
    <author>
      <firstName>Jörg</firstName>
      <lastName>Haeberle</lastName>
    </author>
    <submitter>
      <firstName>Karsten</firstName>
      <lastName>Henkel</lastName>
    </submitter>
    <author>
      <firstName>Diana</firstName>
      <lastName>Gaspar</lastName>
    </author>
    <author>
      <firstName>Pedro</firstName>
      <lastName>Barquinha</lastName>
    </author>
    <author>
      <firstName>Stephan</firstName>
      <lastName>Machulik</lastName>
    </author>
    <author>
      <firstName>Christoph</firstName>
      <lastName>Janowitz</lastName>
    </author>
    <author>
      <firstName>Zbigniew</firstName>
      <lastName>Galazka</lastName>
    </author>
    <author>
      <firstName>Dieter</firstName>
      <lastName>Schmeißer</lastName>
    </author>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>Amorphous oxide semiconductors (AOS)</value>
    </subject>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>Transparent conductive oxides (TCO)</value>
    </subject>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>In2O3</value>
    </subject>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>Ga2O3</value>
    </subject>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>ZnO</value>
    </subject>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>SnO2</value>
    </subject>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>GIZO</value>
    </subject>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>resonant photoelectron spectroscopy</value>
    </subject>
    <collection role="institutes" number="1503">FG Angewandte Physik und Halbleiterspektroskopie</collection>
  </doc>
  <doc>
    <id>15392</id>
    <completedYear/>
    <publishedYear>2015</publishedYear>
    <thesisYearAccepted/>
    <language>eng</language>
    <pageFirst>S. 271</pageFirst>
    <pageLast/>
    <pageNumber/>
    <edition/>
    <issue/>
    <volume/>
    <type>conferenceobject</type>
    <publisherName>Deutsche Physikalische Gesellschaft</publisherName>
    <publisherPlace>Bad Honnef</publisherPlace>
    <creatingCorporation/>
    <contributingCorporation/>
    <belongsToBibliography>0</belongsToBibliography>
    <completedDate>2016-04-11</completedDate>
    <publishedDate>--</publishedDate>
    <thesisDateAccepted>--</thesisDateAccepted>
    <title language="eng">The Electronic Structure of amorphuos SnOx thin films and SnO2 single crystals</title>
    <abstract language="eng">We compare the electronic properties of amorphous p-type SnOx thin film grown by rf magnetron sputtering with those of n-type SnO2 single crystals grown by cvt. We use resPES to study the electronic band structure. We measure the core levels, the VB PES data, partial Integrated Yield (pIY) and the XAS absorption data. From the resPES data recorded at the O1s and the Sn3d edges we derive the VB pDOS and the CB pDOS . The differences are most pronounced in the position of the VBM as for the a-SnOx films there appears a band closer to the Fermi energy. In addition for the SnOx we find in the XAS and pIY data a significant peak that appears right at the Fermi energy. This peak is absent in the single crystalline data. We attribute this to a change in the configuration of the Sn4d states to form a 4d8 configuration instead of 4d9 and 4d10 configurations which are identified in the single crystalline data.</abstract>
    <parentTitle language="eng">Verhandlungen der Deutschen Physikalischen Gesellschaft</parentTitle>
    <identifier type="issn">0420-0195</identifier>
    <identifier type="url">http://www.dpg-verhandlungen.de/year/2015/conference/berlin/part/hl/session/21/contribution/17?lang=en</identifier>
    <enrichment key="UBICOseries">Verhandlungen der Deutschen Physikalischen Gesellschaft ; Reihe 6, Band 50</enrichment>
    <enrichment key="BTU">an der BTU erstellt / created at BTU</enrichment>
    <author>
      <firstName>Jörg</firstName>
      <lastName>Haeberle</lastName>
    </author>
    <submitter>
      <firstName>Karsten</firstName>
      <lastName>Henkel</lastName>
    </submitter>
    <author>
      <firstName>Diana</firstName>
      <lastName>Gaspar</lastName>
    </author>
    <author>
      <firstName>Pedro</firstName>
      <lastName>Barquinha</lastName>
    </author>
    <author>
      <firstName>Luís</firstName>
      <lastName>Pereira</lastName>
    </author>
    <author>
      <firstName>Rodrigo</firstName>
      <lastName>Martins</lastName>
    </author>
    <author>
      <firstName>Elvira</firstName>
      <lastName>Fortunato</lastName>
    </author>
    <author>
      <firstName>Stephan</firstName>
      <lastName>Machulik</lastName>
    </author>
    <author>
      <firstName>Christoph</firstName>
      <lastName>Janowitz</lastName>
    </author>
    <author>
      <firstName>Recardo</firstName>
      <lastName>Manzke</lastName>
    </author>
    <author>
      <firstName>Dieter</firstName>
      <lastName>Schmeißer</lastName>
    </author>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>electronic structure</value>
    </subject>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>SnO2</value>
    </subject>
    <collection role="institutes" number="1503">FG Angewandte Physik und Halbleiterspektroskopie</collection>
  </doc>
  <doc>
    <id>17097</id>
    <completedYear/>
    <publishedYear>2016</publishedYear>
    <thesisYearAccepted/>
    <language>eng</language>
    <pageFirst>105101-1</pageFirst>
    <pageLast>105101-13</pageLast>
    <pageNumber/>
    <edition/>
    <issue>10</issue>
    <volume>120</volume>
    <type>articler</type>
    <publisherName/>
    <publisherPlace/>
    <creatingCorporation/>
    <contributingCorporation/>
    <belongsToBibliography>0</belongsToBibliography>
    <completedDate>2016-09-12</completedDate>
    <publishedDate>--</publishedDate>
    <thesisDateAccepted>--</thesisDateAccepted>
    <title language="eng">Gap states in the electronic structure of SnO2 single crystals and amorphous SnOxthin films</title>
    <abstract language="eng">The electronic structure of a SnO2 single crystal is determined by employing resonant photoelectron spectroscopy. We determine the core level, valence band, and X-ray absorption (XAS) data and compare these with those of amorphous SnOx thin films. We find similar properties concerning the data of the core levels, the valence band features, and the absorption data at the O1s&#13;
edge. We find strong signals arising from intrinsic in-gap states and discuss their origin in terms of polaronic and charge-transfer defects. We deduce from the XAS data recorded at the Sn3d edge&#13;
that the Sn4d10 ground state has contributions of 4d9 and 4d8 states due to configuration interaction.&#13;
We identify localized electronic states depending on the strength of the 4d-5s5p interaction and of&#13;
the O2p-to-Sn4d charge-transfer processes, both appear separated from the extended band-like states of the conduction band. For the amorphous SnOx thin films, significant differences are found only in the absorption data at the Sn3d-edge due to a stronger localization of the in-gap states.</abstract>
    <parentTitle language="eng">Journal of Applied Physics</parentTitle>
    <identifier type="doi">10.1063/1.4962313</identifier>
    <identifier type="issn">0021-8979</identifier>
    <identifier type="issn">1089-7550</identifier>
    <enrichment key="BTU">an der BTU erstellt / created at BTU</enrichment>
    <author>
      <firstName>Jörg</firstName>
      <lastName>Haeberle</lastName>
    </author>
    <submitter>
      <firstName>Karsten</firstName>
      <lastName>Henkel</lastName>
    </submitter>
    <author>
      <firstName>Stephan</firstName>
      <lastName>Machulik</lastName>
    </author>
    <author>
      <firstName>Christoph</firstName>
      <lastName>Janowitz</lastName>
    </author>
    <author>
      <firstName>Recardo</firstName>
      <lastName>Manzke</lastName>
    </author>
    <author>
      <firstName>Diana</firstName>
      <lastName>Gaspar</lastName>
    </author>
    <author>
      <firstName>Pedro</firstName>
      <lastName>Barquinha</lastName>
    </author>
    <author>
      <firstName>Dieter</firstName>
      <lastName>Schmeißer</lastName>
    </author>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>SnO2</value>
    </subject>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>electronic structure</value>
    </subject>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>gap states</value>
    </subject>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>resonant photoelectron spectroscopy (resPES)</value>
    </subject>
    <collection role="institutes" number="1503">FG Angewandte Physik und Halbleiterspektroskopie</collection>
  </doc>
  <doc>
    <id>17464</id>
    <completedYear/>
    <publishedYear>2016</publishedYear>
    <thesisYearAccepted/>
    <language>eng</language>
    <pageFirst>106302-1</pageFirst>
    <pageLast>106302-17</pageLast>
    <pageNumber/>
    <edition/>
    <issue>10</issue>
    <volume>3</volume>
    <type>articler</type>
    <publisherName/>
    <publisherPlace/>
    <creatingCorporation/>
    <contributingCorporation/>
    <belongsToBibliography>0</belongsToBibliography>
    <completedDate>2016-10-17</completedDate>
    <publishedDate>--</publishedDate>
    <thesisDateAccepted>--</thesisDateAccepted>
    <title language="eng">A spectroscopic comparison of IGZO thin film and the parent In2O3, Ga2O3, and ZnO single crystals</title>
    <abstract language="eng">We use resonant photoelectron spectroscopy at the Zn 2p, Ga 2p, In 3d, and O 1s absorption edges to report on the electronic properties of indium–gallium–zinc-oxide thin films. We also compare the data with the respective data of the corresponding single crystals In2O3, Ga2O3, and ZnO. We focus on the elemental composition and, in particular, find no evidence for oxygen deficiency. The In, Ga, and Zn absorption data at resonance can be used to analyze the conduction band states in detail. We deduce that a configuration interaction between d10s0 and d9s1states is of importance. We provided a novel mechanism in which configuration interaction induced gap states create both, extended unoccupied states around E F as well as localized occupied states within the gap.</abstract>
    <parentTitle language="eng">Materials Research Express</parentTitle>
    <identifier type="doi">10.1088/2053-1591/3/10/106302</identifier>
    <identifier type="issn">2053-1591</identifier>
    <enrichment key="BTU">an der BTU erstellt / created at BTU</enrichment>
    <author>
      <firstName>Jörg</firstName>
      <lastName>Haeberle</lastName>
    </author>
    <submitter>
      <firstName>Karsten</firstName>
      <lastName>Henkel</lastName>
    </submitter>
    <author>
      <firstName>Simone</firstName>
      <lastName>Brizzi</lastName>
    </author>
    <author>
      <firstName>Diana</firstName>
      <lastName>Gaspar</lastName>
    </author>
    <author>
      <firstName>Pedro</firstName>
      <lastName>Barquinha</lastName>
    </author>
    <author>
      <firstName>Zbigniew</firstName>
      <lastName>Galazka</lastName>
    </author>
    <author>
      <firstName>Detlev</firstName>
      <lastName>Schulz</lastName>
    </author>
    <author>
      <firstName>Dieter</firstName>
      <lastName>Schmeißer</lastName>
    </author>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>transparent conducting oxides (TCO)</value>
    </subject>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>resonant photoelectron spectroscopy</value>
    </subject>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>in-gapdefect states</value>
    </subject>
    <collection role="institutes" number="1503">FG Angewandte Physik und Halbleiterspektroskopie</collection>
  </doc>
</export-example>
