<?xml version="1.0" encoding="utf-8"?>
<export-example>
  <doc>
    <id>6097</id>
    <completedYear/>
    <publishedYear>2007</publishedYear>
    <thesisYearAccepted/>
    <language>eng</language>
    <pageFirst/>
    <pageLast/>
    <pageNumber/>
    <edition/>
    <issue/>
    <volume/>
    <type>article</type>
    <publisherName/>
    <publisherPlace/>
    <creatingCorporation/>
    <contributingCorporation/>
    <belongsToBibliography>0</belongsToBibliography>
    <completedDate>2011-03-02</completedDate>
    <publishedDate>--</publishedDate>
    <thesisDateAccepted>--</thesisDateAccepted>
    <title language="eng">Effect of laser annealing on crystallinity of the Si layers in Si/SiO2 multiple quantum wells</title>
    <enrichment key="UBICOIdent">006999</enrichment>
    <enrichment key="UBICOquelle">Applied Surface Science 254(2007)4, S. 1083-1086, 0169-4332</enrichment>
    <author>
      <firstName>Tzanimir V.</firstName>
      <lastName>Arguirov</lastName>
    </author>
    <submitter>
      <firstName>...</firstName>
      <lastName>Administrator</lastName>
    </submitter>
    <author>
      <firstName>V. D.</firstName>
      <lastName>Akhmetov</lastName>
    </author>
    <author>
      <firstName>Simona</firstName>
      <lastName>Kouteva-Arguirova</lastName>
    </author>
    <author>
      <firstName>Martin</firstName>
      <lastName>Kittler</lastName>
    </author>
    <author>
      <firstName>R.</firstName>
      <lastName>Rölver</lastName>
    </author>
    <author>
      <firstName>B.</firstName>
      <lastName>Berghoff</lastName>
    </author>
    <author>
      <firstName>M.</firstName>
      <lastName>Först</lastName>
    </author>
    <author>
      <firstName>D. L.</firstName>
      <lastName>Batzner</lastName>
    </author>
    <author>
      <firstName>B.</firstName>
      <lastName>Spangenberg</lastName>
    </author>
    <author>
      <firstName>T.</firstName>
      <lastName>Mtchedlidze</lastName>
    </author>
    <collection role="old_institute" number="01013">LS Experimentalphysik / Materialwissenschaften</collection>
    <collection role="institutes" number="1504">FG Experimentalphysik und funktionale Materialien</collection>
  </doc>
  <doc>
    <id>14051</id>
    <completedYear/>
    <publishedYear>2014</publishedYear>
    <thesisYearAccepted/>
    <language>eng</language>
    <pageFirst>383</pageFirst>
    <pageLast>393</pageLast>
    <pageNumber/>
    <edition/>
    <issue/>
    <volume/>
    <type>conferenceobject</type>
    <publisherName>Trans Tech Publ.</publisherName>
    <publisherPlace>Durnten-Zurich [u.a.]</publisherPlace>
    <creatingCorporation/>
    <contributingCorporation>IHP, IKZ</contributingCorporation>
    <belongsToBibliography>0</belongsToBibliography>
    <completedDate>2015-04-10</completedDate>
    <publishedDate>--</publishedDate>
    <thesisDateAccepted>--</thesisDateAccepted>
    <title language="eng">Luminescence from Germanium and Germanium on Silicon</title>
    <parentTitle language="eng">Gettering and defect engineering in semiconductor technology XV, selected papers from the 15th Gettering and Defect Engineering in Semiconductor Technology Conference, September 22 - 27, 2013, Oxford, UK</parentTitle>
    <identifier type="doi">10.4028/www.scientific.net/SSP.205-206.383</identifier>
    <identifier type="issn">1662-9779</identifier>
    <enrichment key="BTU">an der BTU erstellt / created at BTU</enrichment>
    <enrichment key="UBICOseries">Solid state phenomena ; 205/206</enrichment>
    <author>
      <firstName>Tzanimir V.</firstName>
      <lastName>Arguirov</lastName>
    </author>
    <submitter>
      <firstName>Kerstin</firstName>
      <lastName>Röhl</lastName>
    </submitter>
    <author>
      <firstName>Martin</firstName>
      <lastName>Kittler</lastName>
    </author>
    <author>
      <firstName>Michael</firstName>
      <lastName>Oehme</lastName>
    </author>
    <author>
      <firstName>Nikolay V.</firstName>
      <lastName>Abrosimov</lastName>
    </author>
    <author>
      <firstName>Oleg F.</firstName>
      <lastName>Vyvenko</lastName>
    </author>
    <author>
      <firstName>Erich</firstName>
      <lastName>Kasper</lastName>
    </author>
    <author>
      <firstName>Jörg</firstName>
      <lastName>Schulze</lastName>
    </author>
    <collection role="old_institute" number="01042">LS Schaltkreisentwurf</collection>
    <collection role="institutes" number="1581">FG Schaltkreisentwurf</collection>
  </doc>
  <doc>
    <id>3511</id>
    <completedYear/>
    <publishedYear>2006</publishedYear>
    <thesisYearAccepted/>
    <language>eng</language>
    <pageFirst/>
    <pageLast/>
    <pageNumber/>
    <edition/>
    <issue/>
    <volume/>
    <type>article</type>
    <publisherName/>
    <publisherPlace/>
    <creatingCorporation/>
    <contributingCorporation/>
    <belongsToBibliography>0</belongsToBibliography>
    <completedDate>2007-05-22</completedDate>
    <publishedDate>--</publishedDate>
    <thesisDateAccepted>--</thesisDateAccepted>
    <title language="eng">Silicon-based light emitters</title>
    <enrichment key="UBICOIdent">004201</enrichment>
    <enrichment key="UBICOquelle">Physica Status Solidi : A 203(2006)4, S. 802-809, 0031-8965</enrichment>
    <author>
      <firstName>Martin</firstName>
      <lastName>Kittler</lastName>
    </author>
    <submitter>
      <firstName>...</firstName>
      <lastName>Administrator</lastName>
    </submitter>
    <author>
      <firstName>Manfred</firstName>
      <lastName>Reiche</lastName>
    </author>
    <author>
      <firstName>Tzanimir V.</firstName>
      <lastName>Arguirov</lastName>
    </author>
    <author>
      <firstName>Winfried</firstName>
      <lastName>Seifert</lastName>
    </author>
    <author>
      <firstName>Xuegong</firstName>
      <lastName>Yu</lastName>
    </author>
    <collection role="old_institute" number="01013">LS Experimentalphysik / Materialwissenschaften</collection>
    <collection role="institutes" number="1504">FG Experimentalphysik und funktionale Materialien</collection>
  </doc>
  <doc>
    <id>3484</id>
    <completedYear/>
    <publishedYear>2006</publishedYear>
    <thesisYearAccepted/>
    <language>eng</language>
    <pageFirst/>
    <pageLast/>
    <pageNumber/>
    <edition/>
    <issue/>
    <volume/>
    <type>article</type>
    <publisherName/>
    <publisherPlace/>
    <creatingCorporation/>
    <contributingCorporation/>
    <belongsToBibliography>0</belongsToBibliography>
    <completedDate>2007-05-21</completedDate>
    <publishedDate>--</publishedDate>
    <thesisDateAccepted>--</thesisDateAccepted>
    <title language="eng">Self-organized pattern formation of biomolecules at Si surfaces: Intended application of a dislocation network</title>
    <enrichment key="UBICOIdent">004172</enrichment>
    <enrichment key="UBICOquelle">Materials Science &amp; Engineering: C 26(2006)S. 902-910, 0928-4931</enrichment>
    <author>
      <firstName>Martin</firstName>
      <lastName>Kittler</lastName>
    </author>
    <submitter>
      <firstName>...</firstName>
      <lastName>Administrator</lastName>
    </submitter>
    <author>
      <firstName>Xuegong</firstName>
      <lastName>Yu</lastName>
    </author>
    <author>
      <firstName>Oleg F.</firstName>
      <lastName>Vyvenko</lastName>
    </author>
    <author>
      <firstName>Mario</firstName>
      <lastName>Birkholz</lastName>
    </author>
    <author>
      <firstName>Winfried</firstName>
      <lastName>Seifert</lastName>
    </author>
    <author>
      <firstName>Manfred</firstName>
      <lastName>Reiche</lastName>
    </author>
    <author>
      <firstName>T.</firstName>
      <lastName>Wilhelm</lastName>
    </author>
    <author>
      <firstName>Tzanimir V.</firstName>
      <lastName>Arguirov</lastName>
    </author>
    <author>
      <firstName>A.</firstName>
      <lastName>Wolff</lastName>
    </author>
    <author>
      <firstName>W.</firstName>
      <lastName>Fritzsche</lastName>
    </author>
    <author>
      <firstName>M.</firstName>
      <lastName>Seibt</lastName>
    </author>
    <collection role="old_institute" number="01013">LS Experimentalphysik / Materialwissenschaften</collection>
    <collection role="institutes" number="1504">FG Experimentalphysik und funktionale Materialien</collection>
  </doc>
  <doc>
    <id>3546</id>
    <completedYear/>
    <publishedYear>2005</publishedYear>
    <thesisYearAccepted/>
    <language>eng</language>
    <pageFirst/>
    <pageLast/>
    <pageNumber/>
    <edition/>
    <issue/>
    <volume/>
    <type>article</type>
    <publisherName/>
    <publisherPlace/>
    <creatingCorporation/>
    <contributingCorporation/>
    <belongsToBibliography>0</belongsToBibliography>
    <completedDate>2007-05-23</completedDate>
    <publishedDate>--</publishedDate>
    <thesisDateAccepted>--</thesisDateAccepted>
    <title language="eng">Silicon-based light emitters for on-chip optical interconnects</title>
    <enrichment key="UBICOIdent">004236</enrichment>
    <enrichment key="UBICOquelle">Solid State Phenomena 108-109(2005) S. 749, 1012-0394</enrichment>
    <author>
      <firstName>Martin</firstName>
      <lastName>Kittler</lastName>
    </author>
    <submitter>
      <firstName>...</firstName>
      <lastName>Administrator</lastName>
    </submitter>
    <author>
      <firstName>Tzanimir V.</firstName>
      <lastName>Arguirov</lastName>
    </author>
    <author>
      <firstName>Winfried</firstName>
      <lastName>Seifert</lastName>
    </author>
    <author>
      <firstName>Xuegong</firstName>
      <lastName>Yu</lastName>
    </author>
    <author>
      <firstName>Manfred</firstName>
      <lastName>Reiche</lastName>
    </author>
    <collection role="old_institute" number="01013">LS Experimentalphysik / Materialwissenschaften</collection>
    <collection role="institutes" number="1504">FG Experimentalphysik und funktionale Materialien</collection>
  </doc>
  <doc>
    <id>4090</id>
    <completedYear/>
    <publishedYear>2008</publishedYear>
    <thesisYearAccepted/>
    <language>eng</language>
    <pageFirst/>
    <pageLast/>
    <pageNumber/>
    <edition/>
    <issue/>
    <volume/>
    <type>doctoralthesis</type>
    <publisherName/>
    <publisherPlace/>
    <creatingCorporation/>
    <contributingCorporation/>
    <belongsToBibliography>0</belongsToBibliography>
    <completedDate>2008-12-01</completedDate>
    <publishedDate>--</publishedDate>
    <thesisDateAccepted>--</thesisDateAccepted>
    <title language="eng">Electro-optical properties of dislocations in silicon and their possible application for light emitters</title>
    <identifier type="urn">urn:nbn:de:kobv:co1-opus-5837</identifier>
    <identifier type="url">http://opus.kobv.de/btu/volltexte/2008/583/</identifier>
    <enrichment key="UBICOIdent">004839</enrichment>
    <author>
      <firstName>Tzanimir V.</firstName>
      <lastName>Arguirov</lastName>
    </author>
    <submitter>
      <firstName>...</firstName>
      <lastName>Administrator</lastName>
    </submitter>
    <subject>
      <language>deu</language>
      <type>uncontrolled</type>
      <value>Silicium</value>
    </subject>
    <subject>
      <language>deu</language>
      <type>uncontrolled</type>
      <value>Versetzung &lt;Kristallographie&gt;</value>
    </subject>
    <subject>
      <language>deu</language>
      <type>uncontrolled</type>
      <value>Lumineszenz</value>
    </subject>
    <collection role="old_institute" number="01013">LS Experimentalphysik / Materialwissenschaften</collection>
    <collection role="institutes" number="1504">FG Experimentalphysik und funktionale Materialien</collection>
  </doc>
  <doc>
    <id>6099</id>
    <completedYear/>
    <publishedYear>2007</publishedYear>
    <thesisYearAccepted/>
    <language>eng</language>
    <pageFirst>1252</pageFirst>
    <pageLast>1259</pageLast>
    <pageNumber/>
    <edition/>
    <issue>5-8</issue>
    <volume>27</volume>
    <type>article</type>
    <publisherName/>
    <publisherPlace/>
    <creatingCorporation/>
    <contributingCorporation/>
    <belongsToBibliography>0</belongsToBibliography>
    <completedDate>2011-03-02</completedDate>
    <publishedDate>--</publishedDate>
    <thesisDateAccepted>--</thesisDateAccepted>
    <title language="eng">Silicon naostructures for IR light emitters</title>
    <parentTitle language="eng">Materials Sience and Engineering C</parentTitle>
    <identifier type="issn">1873-0191</identifier>
    <enrichment key="UBICOIdent">007001</enrichment>
    <author>
      <firstName>Martin</firstName>
      <lastName>Kittler</lastName>
    </author>
    <submitter>
      <firstName>...</firstName>
      <lastName>Administrator</lastName>
    </submitter>
    <author>
      <firstName>Winfried</firstName>
      <lastName>Seifert</lastName>
    </author>
    <author>
      <firstName>Xuegong</firstName>
      <lastName>Yu</lastName>
    </author>
    <author>
      <firstName>G.</firstName>
      <lastName>Jia</lastName>
    </author>
    <author>
      <firstName>Oleg F.</firstName>
      <lastName>Vyvenko</lastName>
    </author>
    <author>
      <firstName>T.</firstName>
      <lastName>Mtchedlidze</lastName>
    </author>
    <author>
      <firstName>Manfred</firstName>
      <lastName>Reiche</lastName>
    </author>
    <author>
      <firstName>J.</firstName>
      <lastName>Sha</lastName>
    </author>
    <author>
      <firstName>D.</firstName>
      <lastName>Yang</lastName>
    </author>
    <author>
      <firstName>Tzanimir V.</firstName>
      <lastName>Arguirov</lastName>
    </author>
    <collection role="old_institute" number="01013">LS Experimentalphysik / Materialwissenschaften</collection>
    <collection role="institutes" number="1504">FG Experimentalphysik und funktionale Materialien</collection>
  </doc>
  <doc>
    <id>6100</id>
    <completedYear/>
    <publishedYear>2007</publishedYear>
    <thesisYearAccepted/>
    <language>eng</language>
    <pageFirst/>
    <pageLast/>
    <pageNumber/>
    <edition/>
    <issue/>
    <volume/>
    <type>articlenr</type>
    <publisherName/>
    <publisherPlace/>
    <creatingCorporation/>
    <contributingCorporation/>
    <belongsToBibliography>0</belongsToBibliography>
    <completedDate>2011-03-02</completedDate>
    <publishedDate>--</publishedDate>
    <thesisDateAccepted>--</thesisDateAccepted>
    <title language="eng">Regular dislocation networks in silicon as a tool for nanostructures devices used in optics, biology and electronics</title>
    <enrichment key="UBICOIdent">007002</enrichment>
    <enrichment key="UBICOquelle">Small 3(2007)6, S. 964-973, 1613-6810</enrichment>
    <author>
      <firstName>Martin</firstName>
      <lastName>Kittler</lastName>
    </author>
    <submitter>
      <firstName>...</firstName>
      <lastName>Administrator</lastName>
    </submitter>
    <author>
      <firstName>Xuegong</firstName>
      <lastName>Yu</lastName>
    </author>
    <author>
      <firstName>T.</firstName>
      <lastName>Mtchedlidze</lastName>
    </author>
    <author>
      <firstName>Tzanimir V.</firstName>
      <lastName>Arguirov</lastName>
    </author>
    <author>
      <firstName>Oleg F.</firstName>
      <lastName>Vyvenko</lastName>
    </author>
    <author>
      <firstName>Winfried</firstName>
      <lastName>Seifert</lastName>
    </author>
    <author>
      <firstName>Manfred</firstName>
      <lastName>Reiche</lastName>
    </author>
    <author>
      <firstName>T.</firstName>
      <lastName>Wilhelm</lastName>
    </author>
    <author>
      <firstName>M.</firstName>
      <lastName>Seibt</lastName>
    </author>
    <author>
      <firstName>O.</firstName>
      <lastName>Voss</lastName>
    </author>
    <author>
      <firstName>A.</firstName>
      <lastName>Wolff</lastName>
    </author>
    <author>
      <firstName>W.</firstName>
      <lastName>Fritzsche</lastName>
    </author>
    <collection role="old_institute" number="01013">LS Experimentalphysik / Materialwissenschaften</collection>
    <collection role="institutes" number="1504">FG Experimentalphysik und funktionale Materialien</collection>
  </doc>
  <doc>
    <id>6102</id>
    <completedYear/>
    <publishedYear>2007</publishedYear>
    <thesisYearAccepted/>
    <language>eng</language>
    <pageFirst/>
    <pageLast/>
    <pageNumber/>
    <edition/>
    <issue/>
    <volume/>
    <type>article</type>
    <publisherName/>
    <publisherPlace/>
    <creatingCorporation/>
    <contributingCorporation/>
    <belongsToBibliography>0</belongsToBibliography>
    <completedDate>2011-03-02</completedDate>
    <publishedDate>--</publishedDate>
    <thesisDateAccepted>--</thesisDateAccepted>
    <title language="eng">Influence of electric field on spectral positions of dislocation-related luminescence peaks in silicon: Stark effect</title>
    <enrichment key="UBICOIdent">007004</enrichment>
    <enrichment key="UBICOquelle">Applied Physics Letters 91(2007)20, 201113, 0003-6951</enrichment>
    <author>
      <firstName>T.</firstName>
      <lastName>Mtchedlidze</lastName>
    </author>
    <submitter>
      <firstName>...</firstName>
      <lastName>Administrator</lastName>
    </submitter>
    <author>
      <firstName>Tzanimir V.</firstName>
      <lastName>Arguirov</lastName>
    </author>
    <author>
      <firstName>Martin</firstName>
      <lastName>Kittler</lastName>
    </author>
    <author>
      <firstName>T.</firstName>
      <lastName>Hoang</lastName>
    </author>
    <author>
      <firstName>J.</firstName>
      <lastName>Hollemann</lastName>
    </author>
    <author>
      <firstName>J.</firstName>
      <lastName>Schmitz</lastName>
    </author>
    <collection role="old_institute" number="01013">LS Experimentalphysik / Materialwissenschaften</collection>
    <collection role="institutes" number="1504">FG Experimentalphysik und funktionale Materialien</collection>
  </doc>
  <doc>
    <id>6103</id>
    <completedYear/>
    <publishedYear>2007</publishedYear>
    <thesisYearAccepted/>
    <language>eng</language>
    <pageFirst/>
    <pageLast/>
    <pageNumber/>
    <edition/>
    <issue/>
    <volume/>
    <type>article</type>
    <publisherName/>
    <publisherPlace/>
    <creatingCorporation/>
    <contributingCorporation/>
    <belongsToBibliography>0</belongsToBibliography>
    <completedDate>2011-03-02</completedDate>
    <publishedDate>--</publishedDate>
    <thesisDateAccepted>--</thesisDateAccepted>
    <title language="eng">Structural and optical properties of Si/SiO2 multi-quantum wells</title>
    <enrichment key="UBICOIdent">007005</enrichment>
    <enrichment key="UBICOquelle">Physica : E 38(2007)1/2, S. 152-155, 1386-9477</enrichment>
    <author>
      <firstName>T.</firstName>
      <lastName>Mtchedlidze</lastName>
    </author>
    <submitter>
      <firstName>...</firstName>
      <lastName>Administrator</lastName>
    </submitter>
    <author>
      <firstName>Tzanimir V.</firstName>
      <lastName>Arguirov</lastName>
    </author>
    <author>
      <firstName>Martin</firstName>
      <lastName>Kittler</lastName>
    </author>
    <author>
      <firstName>R.</firstName>
      <lastName>Rölver</lastName>
    </author>
    <author>
      <firstName>B.</firstName>
      <lastName>Berghoff</lastName>
    </author>
    <author>
      <firstName>M.</firstName>
      <lastName>Först</lastName>
    </author>
    <author>
      <firstName>B.</firstName>
      <lastName>Spangenberg</lastName>
    </author>
    <collection role="old_institute" number="01013">LS Experimentalphysik / Materialwissenschaften</collection>
    <collection role="institutes" number="1504">FG Experimentalphysik und funktionale Materialien</collection>
  </doc>
  <doc>
    <id>6104</id>
    <completedYear/>
    <publishedYear>2007</publishedYear>
    <thesisYearAccepted/>
    <language>eng</language>
    <pageFirst/>
    <pageLast/>
    <pageNumber/>
    <edition/>
    <issue/>
    <volume/>
    <type>article</type>
    <publisherName/>
    <publisherPlace/>
    <creatingCorporation/>
    <contributingCorporation/>
    <belongsToBibliography>0</belongsToBibliography>
    <completedDate>2011-03-02</completedDate>
    <publishedDate>--</publishedDate>
    <thesisDateAccepted>--</thesisDateAccepted>
    <title language="eng">Signatures of distinct structures related to rod-like defects in silicon detected by various measurement methods</title>
    <enrichment key="UBICOIdent">007006</enrichment>
    <enrichment key="UBICOquelle">Physica Status Solidi : A 204(2007)7, S. 2229-2237, 0031-8965</enrichment>
    <author>
      <firstName>T.</firstName>
      <lastName>Mtchedlidze</lastName>
    </author>
    <submitter>
      <firstName>...</firstName>
      <lastName>Administrator</lastName>
    </submitter>
    <author>
      <firstName>Tzanimir V.</firstName>
      <lastName>Arguirov</lastName>
    </author>
    <author>
      <firstName>G.</firstName>
      <lastName>Jia</lastName>
    </author>
    <author>
      <firstName>Martin</firstName>
      <lastName>Kittler</lastName>
    </author>
    <collection role="old_institute" number="01013">LS Experimentalphysik / Materialwissenschaften</collection>
    <collection role="institutes" number="1504">FG Experimentalphysik und funktionale Materialien</collection>
  </doc>
  <doc>
    <id>6105</id>
    <completedYear/>
    <publishedYear>2005</publishedYear>
    <thesisYearAccepted/>
    <language>eng</language>
    <pageFirst>1005</pageFirst>
    <pageLast>1008</pageLast>
    <pageNumber/>
    <edition/>
    <issue/>
    <volume/>
    <type>conferenceobject</type>
    <publisherName>IEEE Operations Center</publisherName>
    <publisherPlace>Piscataway, NJ</publisherPlace>
    <creatingCorporation/>
    <contributingCorporation/>
    <belongsToBibliography>0</belongsToBibliography>
    <completedDate>2011-03-02</completedDate>
    <publishedDate>--</publishedDate>
    <thesisDateAccepted>--</thesisDateAccepted>
    <title language="eng">Dislocation engineering for a Si-based light emitter at 1.5 μm</title>
    <parentTitle language="eng">Technical digest, IEDM, IEEE International Electron Devices Meeting 2005, Washington, DC, December 5 - 7, 2005</parentTitle>
    <identifier type="isbn">0-7803-9268-X</identifier>
    <enrichment key="UBICOIdent">007007</enrichment>
    <author>
      <firstName>Martin</firstName>
      <lastName>Kittler</lastName>
    </author>
    <submitter>
      <firstName>...</firstName>
      <lastName>Administrator</lastName>
    </submitter>
    <author>
      <firstName>Tzanimir V.</firstName>
      <lastName>Arguirov</lastName>
    </author>
    <author>
      <firstName>Winfried</firstName>
      <lastName>Seifert</lastName>
    </author>
    <author>
      <firstName>Xuegong</firstName>
      <lastName>Yu</lastName>
    </author>
    <author>
      <firstName>Manfred</firstName>
      <lastName>Reiche</lastName>
    </author>
    <collection role="old_institute" number="01013">LS Experimentalphysik / Materialwissenschaften</collection>
    <collection role="institutes" number="1504">FG Experimentalphysik und funktionale Materialien</collection>
  </doc>
  <doc>
    <id>6108</id>
    <completedYear/>
    <publishedYear>2006</publishedYear>
    <thesisYearAccepted/>
    <language>eng</language>
    <pageFirst/>
    <pageLast/>
    <pageNumber/>
    <edition/>
    <issue/>
    <volume/>
    <type>article</type>
    <publisherName/>
    <publisherPlace/>
    <creatingCorporation/>
    <contributingCorporation/>
    <belongsToBibliography>0</belongsToBibliography>
    <completedDate>2011-03-03</completedDate>
    <publishedDate>--</publishedDate>
    <thesisDateAccepted>--</thesisDateAccepted>
    <title language="eng">Towards Silicon Based Light Emitters Using the Radiation from Dislocation Networks</title>
    <enrichment key="UBICOIdent">007010</enrichment>
    <enrichment key="UBICOquelle">Material Sciences and Engineering B 134(2006)2-3, S. 109 - 113, 0921-5107</enrichment>
    <author>
      <firstName>Tzanimir V.</firstName>
      <lastName>Arguirov</lastName>
    </author>
    <submitter>
      <firstName>...</firstName>
      <lastName>Administrator</lastName>
    </submitter>
    <author>
      <firstName>Martin</firstName>
      <lastName>Kittler</lastName>
    </author>
    <author>
      <firstName>Winfried</firstName>
      <lastName>Seifert</lastName>
    </author>
    <author>
      <firstName>Xuegong</firstName>
      <lastName>Yu</lastName>
    </author>
    <collection role="old_institute" number="01013">LS Experimentalphysik / Materialwissenschaften</collection>
    <collection role="institutes" number="1504">FG Experimentalphysik und funktionale Materialien</collection>
  </doc>
  <doc>
    <id>6109</id>
    <completedYear/>
    <publishedYear>2006</publishedYear>
    <thesisYearAccepted/>
    <language>eng</language>
    <pageFirst/>
    <pageLast/>
    <pageNumber/>
    <edition/>
    <issue/>
    <volume/>
    <type>article</type>
    <publisherName/>
    <publisherPlace/>
    <creatingCorporation/>
    <contributingCorporation/>
    <belongsToBibliography>0</belongsToBibliography>
    <completedDate>2011-03-03</completedDate>
    <publishedDate>--</publishedDate>
    <thesisDateAccepted>--</thesisDateAccepted>
    <title language="eng">Residual stress in Si nanocrystals embedded in a SiO2 matrix</title>
    <enrichment key="UBICOIdent">007011</enrichment>
    <enrichment key="UBICOquelle">Applied Physics Letters 89(2006) S. 05311, 0003-6951</enrichment>
    <author>
      <firstName>Tzanimir V.</firstName>
      <lastName>Arguirov</lastName>
    </author>
    <submitter>
      <firstName>...</firstName>
      <lastName>Administrator</lastName>
    </submitter>
    <author>
      <firstName>T.</firstName>
      <lastName>Mtchedlidze</lastName>
    </author>
    <author>
      <firstName>Martin</firstName>
      <lastName>Kittler</lastName>
    </author>
    <author>
      <firstName>R.</firstName>
      <lastName>Rölver</lastName>
    </author>
    <author>
      <firstName>B.</firstName>
      <lastName>Berghoff</lastName>
    </author>
    <author>
      <firstName>M.</firstName>
      <lastName>Först</lastName>
    </author>
    <author>
      <firstName>B.</firstName>
      <lastName>Spangenberg</lastName>
    </author>
    <collection role="old_institute" number="01013">LS Experimentalphysik / Materialwissenschaften</collection>
    <collection role="institutes" number="1504">FG Experimentalphysik und funktionale Materialien</collection>
  </doc>
  <doc>
    <id>6088</id>
    <completedYear/>
    <publishedYear>2008</publishedYear>
    <thesisYearAccepted/>
    <language>eng</language>
    <pageFirst/>
    <pageLast/>
    <pageNumber/>
    <edition/>
    <issue/>
    <volume/>
    <type>conferenceobject</type>
    <publisherName>SPIE</publisherName>
    <publisherPlace>Bellingham, Wash.</publisherPlace>
    <creatingCorporation/>
    <contributingCorporation/>
    <belongsToBibliography>0</belongsToBibliography>
    <completedDate>2011-03-02</completedDate>
    <publishedDate>--</publishedDate>
    <thesisDateAccepted>--</thesisDateAccepted>
    <title language="eng">Stark effect at dislocations in silicon for modulation of a 1,5 um light emitter</title>
    <parentTitle language="eng">Silicon photonics III, 21 - 24 January 2008, San Jose, California, USA</parentTitle>
    <identifier type="isbn">978-0-8194-7073-7</identifier>
    <enrichment key="UBICOIdent">006988</enrichment>
    <enrichment key="UBICOseries">Proceedings of SPIE ; 6898</enrichment>
    <author>
      <firstName>Martin</firstName>
      <lastName>Kittler</lastName>
    </author>
    <submitter>
      <firstName>...</firstName>
      <lastName>Administrator</lastName>
    </submitter>
    <author>
      <firstName>Manfred</firstName>
      <lastName>Reiche</lastName>
    </author>
    <author>
      <firstName>T.</firstName>
      <lastName>Mtchedlidze</lastName>
    </author>
    <author>
      <firstName>Tzanimir V.</firstName>
      <lastName>Arguirov</lastName>
    </author>
    <author>
      <firstName>Guobin</firstName>
      <lastName>Jia</lastName>
    </author>
    <author>
      <firstName>Winfried</firstName>
      <lastName>Seifert</lastName>
    </author>
    <author>
      <firstName>Stephan</firstName>
      <lastName>Suckow</lastName>
    </author>
    <author>
      <firstName>Wilhelm</firstName>
      <lastName>Thomas</lastName>
    </author>
    <collection role="old_institute" number="01013">LS Experimentalphysik / Materialwissenschaften</collection>
    <collection role="institutes" number="1504">FG Experimentalphysik und funktionale Materialien</collection>
  </doc>
  <doc>
    <id>6089</id>
    <completedYear/>
    <publishedYear>2008</publishedYear>
    <thesisYearAccepted/>
    <language>eng</language>
    <pageFirst/>
    <pageLast/>
    <pageNumber/>
    <edition/>
    <issue/>
    <volume/>
    <type>article</type>
    <publisherName/>
    <publisherPlace/>
    <creatingCorporation/>
    <contributingCorporation/>
    <belongsToBibliography>0</belongsToBibliography>
    <completedDate>2011-03-02</completedDate>
    <publishedDate>--</publishedDate>
    <thesisDateAccepted>--</thesisDateAccepted>
    <title language="eng">Dislocations in silicon as a tool to be used in optics, electronics and biology</title>
    <enrichment key="UBICOIdent">006989</enrichment>
    <enrichment key="UBICOquelle">Solid State Phenomena 131-133(2008)S. 289 - 233, 1012-0394</enrichment>
    <author>
      <firstName>Martin</firstName>
      <lastName>Kittler</lastName>
    </author>
    <contributor>
      <firstName>Manfred</firstName>
      <lastName>Reiche</lastName>
    </contributor>
    <submitter>
      <firstName>...</firstName>
      <lastName>Administrator</lastName>
    </submitter>
    <author>
      <firstName>Tzanimir V.</firstName>
      <lastName>Arguirov</lastName>
    </author>
    <author>
      <firstName>T.</firstName>
      <lastName>Mtchedlidze</lastName>
    </author>
    <author>
      <firstName>Winfried</firstName>
      <lastName>Seifert</lastName>
    </author>
    <author>
      <firstName>Oleg F.</firstName>
      <lastName>Vyvenko</lastName>
    </author>
    <author>
      <firstName>T.</firstName>
      <lastName>Wilhelm</lastName>
    </author>
    <author>
      <firstName>Xuegong</firstName>
      <lastName>Yu</lastName>
    </author>
    <collection role="old_institute" number="01013">LS Experimentalphysik / Materialwissenschaften</collection>
    <collection role="institutes" number="1504">FG Experimentalphysik und funktionale Materialien</collection>
  </doc>
  <doc>
    <id>6090</id>
    <completedYear/>
    <publishedYear>2008</publishedYear>
    <thesisYearAccepted/>
    <language>eng</language>
    <pageFirst>303</pageFirst>
    <pageLast>308</pageLast>
    <pageNumber/>
    <edition/>
    <issue/>
    <volume>131/133</volume>
    <type>articler</type>
    <publisherName/>
    <publisherPlace/>
    <creatingCorporation/>
    <contributingCorporation/>
    <belongsToBibliography>0</belongsToBibliography>
    <completedDate>2011-03-02</completedDate>
    <publishedDate>--</publishedDate>
    <thesisDateAccepted>--</thesisDateAccepted>
    <title language="eng">Engineering of dislocation loops for light emission from silicon diodes</title>
    <parentTitle language="eng">Solid State Phenomena</parentTitle>
    <identifier type="issn">1012-0394</identifier>
    <enrichment key="UBICOIdent">006990</enrichment>
    <author>
      <firstName>T.</firstName>
      <lastName>Mtchedlidze</lastName>
    </author>
    <submitter>
      <firstName>...</firstName>
      <lastName>Administrator</lastName>
    </submitter>
    <author>
      <firstName>Tzanimir V.</firstName>
      <lastName>Arguirov</lastName>
    </author>
    <author>
      <firstName>Martin</firstName>
      <lastName>Kittler</lastName>
    </author>
    <author>
      <firstName>T.</firstName>
      <lastName>Hoang</lastName>
    </author>
    <author>
      <firstName>J.</firstName>
      <lastName>Hollemann</lastName>
    </author>
    <author>
      <firstName>P.</firstName>
      <lastName>LeMinh</lastName>
    </author>
    <author>
      <firstName>J.</firstName>
      <lastName>Schmitz</lastName>
    </author>
    <collection role="old_institute" number="01013">LS Experimentalphysik / Materialwissenschaften</collection>
    <collection role="institutes" number="1504">FG Experimentalphysik und funktionale Materialien</collection>
  </doc>
  <doc>
    <id>6091</id>
    <completedYear/>
    <publishedYear>2008</publishedYear>
    <thesisYearAccepted/>
    <language>eng</language>
    <pageFirst/>
    <pageLast/>
    <pageNumber/>
    <edition/>
    <issue/>
    <volume/>
    <type>article</type>
    <publisherName/>
    <publisherPlace/>
    <creatingCorporation/>
    <contributingCorporation/>
    <belongsToBibliography>0</belongsToBibliography>
    <completedDate>2011-03-02</completedDate>
    <publishedDate>--</publishedDate>
    <thesisDateAccepted>--</thesisDateAccepted>
    <title language="eng">Influence of a substrate, structure and annealing procedures on crystalline and optical properties of Si/SiO2 multiple quantum wells</title>
    <enrichment key="UBICOIdent">006991</enrichment>
    <enrichment key="UBICOquelle">Thin Solid Films 516(2008)20, S. 6800-6803, 0040-6090</enrichment>
    <author>
      <firstName>T.</firstName>
      <lastName>Mtchedlidze</lastName>
    </author>
    <submitter>
      <firstName>...</firstName>
      <lastName>Administrator</lastName>
    </submitter>
    <author>
      <firstName>Tzanimir V.</firstName>
      <lastName>Arguirov</lastName>
    </author>
    <author>
      <firstName>Simona</firstName>
      <lastName>Kouteva-Arguirova</lastName>
    </author>
    <author>
      <firstName>G.</firstName>
      <lastName>Jia</lastName>
    </author>
    <author>
      <firstName>Martin</firstName>
      <lastName>Kittler</lastName>
    </author>
    <author>
      <firstName>R.</firstName>
      <lastName>Rölver</lastName>
    </author>
    <author>
      <firstName>B.</firstName>
      <lastName>Berghoff</lastName>
    </author>
    <author>
      <firstName>M.</firstName>
      <lastName>Först</lastName>
    </author>
    <author>
      <firstName>D. L.</firstName>
      <lastName>Batzner</lastName>
    </author>
    <author>
      <firstName>B.</firstName>
      <lastName>Spangenberg</lastName>
    </author>
    <collection role="old_institute" number="01013">LS Experimentalphysik / Materialwissenschaften</collection>
    <collection role="institutes" number="1504">FG Experimentalphysik und funktionale Materialien</collection>
  </doc>
  <doc>
    <id>6092</id>
    <completedYear/>
    <publishedYear>2008</publishedYear>
    <thesisYearAccepted/>
    <language>eng</language>
    <pageFirst>161304</pageFirst>
    <pageLast/>
    <pageNumber/>
    <edition/>
    <issue>16</issue>
    <volume>77</volume>
    <type>article</type>
    <publisherName/>
    <publisherPlace/>
    <creatingCorporation/>
    <contributingCorporation/>
    <belongsToBibliography>0</belongsToBibliography>
    <completedDate>2011-03-02</completedDate>
    <publishedDate>--</publishedDate>
    <thesisDateAccepted>--</thesisDateAccepted>
    <title language="eng">Light-induced solid-to-solid phase transformation in Si nanolayers of Si.SiO2 multiple quantum wells</title>
    <parentTitle language="eng">Physical Review B</parentTitle>
    <identifier type="issn">1098-0121</identifier>
    <enrichment key="UBICOIdent">006992</enrichment>
    <author>
      <firstName>T.</firstName>
      <lastName>Mtchedlidze</lastName>
    </author>
    <submitter>
      <firstName>...</firstName>
      <lastName>Administrator</lastName>
    </submitter>
    <author>
      <firstName>Tzanimir V.</firstName>
      <lastName>Arguirov</lastName>
    </author>
    <author>
      <firstName>Simona</firstName>
      <lastName>Kouteva-Arguirova</lastName>
    </author>
    <author>
      <firstName>Martin</firstName>
      <lastName>Kittler</lastName>
    </author>
    <author>
      <firstName>R.</firstName>
      <lastName>Rölver</lastName>
    </author>
    <author>
      <firstName>B.</firstName>
      <lastName>Berghoff</lastName>
    </author>
    <author>
      <firstName>D. L.</firstName>
      <lastName>Batzner</lastName>
    </author>
    <author>
      <firstName>B.</firstName>
      <lastName>Spangenberg</lastName>
    </author>
    <collection role="old_institute" number="01013">LS Experimentalphysik / Materialwissenschaften</collection>
    <collection role="institutes" number="1504">FG Experimentalphysik und funktionale Materialien</collection>
  </doc>
  <doc>
    <id>6093</id>
    <completedYear/>
    <publishedYear>2008</publishedYear>
    <thesisYearAccepted/>
    <language>eng</language>
    <pageFirst>503</pageFirst>
    <pageLast>510</pageLast>
    <pageNumber/>
    <edition/>
    <issue/>
    <volume>131/133</volume>
    <type>article</type>
    <publisherName/>
    <publisherPlace/>
    <creatingCorporation/>
    <contributingCorporation/>
    <belongsToBibliography>0</belongsToBibliography>
    <completedDate>2011-03-02</completedDate>
    <publishedDate>--</publishedDate>
    <thesisDateAccepted>--</thesisDateAccepted>
    <title language="eng">Regular dislocation networks in Si. Part II: Lunimescence</title>
    <parentTitle language="eng">Solid State Phenomena</parentTitle>
    <identifier type="issn">1012-0394</identifier>
    <enrichment key="UBICOIdent">006993</enrichment>
    <author>
      <firstName>T.</firstName>
      <lastName>Mtchedlidze</lastName>
    </author>
    <submitter>
      <firstName>...</firstName>
      <lastName>Administrator</lastName>
    </submitter>
    <author>
      <firstName>T.</firstName>
      <lastName>Wilhelm</lastName>
    </author>
    <author>
      <firstName>Xuegong</firstName>
      <lastName>Yu</lastName>
    </author>
    <author>
      <firstName>Tzanimir V.</firstName>
      <lastName>Arguirov</lastName>
    </author>
    <author>
      <firstName>G.</firstName>
      <lastName>Jia</lastName>
    </author>
    <author>
      <firstName>Manfred</firstName>
      <lastName>Reiche</lastName>
    </author>
    <author>
      <firstName>Martin</firstName>
      <lastName>Kittler</lastName>
    </author>
    <collection role="old_institute" number="01013">LS Experimentalphysik / Materialwissenschaften</collection>
    <collection role="institutes" number="1504">FG Experimentalphysik und funktionale Materialien</collection>
  </doc>
</export-example>
