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  <doc>
    <id>21984</id>
    <completedYear/>
    <publishedYear>2018</publishedYear>
    <thesisYearAccepted/>
    <language>eng</language>
    <pageFirst>11</pageFirst>
    <pageLast>20</pageLast>
    <pageNumber/>
    <edition/>
    <issue/>
    <volume/>
    <type>articlenr</type>
    <publisherName>The Norwegian University of Science and Technology</publisherName>
    <publisherPlace>Trondheim</publisherPlace>
    <creatingCorporation/>
    <contributingCorporation/>
    <belongsToBibliography>0</belongsToBibliography>
    <completedDate>2018-06-21</completedDate>
    <publishedDate>--</publishedDate>
    <thesisDateAccepted>--</thesisDateAccepted>
    <title language="eng">The impact of lattice strain on the reactivity of silicon</title>
    <abstract language="eng">The present study is focused on the question of how lattice strain mechanically introduced into silicon alters the chemical reactivity of the silicon atoms that are affected by the strain field on a microscopic length scale. The magnitude and local distribution of lattice strain are extracted from confocal Raman microscopy measurements. The reactivity of Si is expressed by the etch rate of Si after treatment with HF–HNO3–H2SiF6 mixtures. Then, the local etch rate is calculated from the local etch depth as determined by confocal microscopy. It has been found that tensile strain leads to the highest enhancement of the etch rate, followed by a compressive strain increase in the etch rate.</abstract>
    <parentTitle language="eng">Silicon for the Chemical and Solar Industry XIV</parentTitle>
    <enrichment key="BTU">an der BTU erstellt / created at BTU</enrichment>
    <author>
      <firstName>Jörg</firstName>
      <lastName>Acker</lastName>
    </author>
    <editor>
      <firstName>Birger</firstName>
      <lastName>Andresen</lastName>
    </editor>
    <submitter>
      <firstName>Jörg</firstName>
      <lastName>Acker</lastName>
    </submitter>
    <author>
      <firstName>Tim</firstName>
      <lastName>Sieber</lastName>
    </author>
    <editor>
      <firstName>Lars</firstName>
      <lastName>Nygaard</lastName>
    </editor>
    <author>
      <firstName>Thomas</firstName>
      <lastName>Langner</lastName>
    </author>
    <editor>
      <firstName>Harry</firstName>
      <lastName>Rong</lastName>
    </editor>
    <author>
      <firstName>Steven</firstName>
      <lastName>Herold</lastName>
    </author>
    <editor>
      <firstName>Merete</firstName>
      <lastName>Tangstad</lastName>
    </editor>
    <editor>
      <firstName>Halvard</firstName>
      <lastName>Tveit</lastName>
    </editor>
    <editor>
      <firstName>Ingrid Gamst</firstName>
      <lastName>Page</lastName>
    </editor>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>silicon</value>
    </subject>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>etching</value>
    </subject>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>Raman spectroscopy</value>
    </subject>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>lattice strain</value>
    </subject>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>stress</value>
    </subject>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>mechanical activation</value>
    </subject>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>mechanochemistry</value>
    </subject>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>confocal microscopy</value>
    </subject>
    <collection role="institutes" number="2206">FG Physikalische Chemie</collection>
  </doc>
  <doc>
    <id>22362</id>
    <completedYear/>
    <publishedYear>2018</publishedYear>
    <thesisYearAccepted/>
    <language>eng</language>
    <pageFirst>4135</pageFirst>
    <pageLast>4144</pageLast>
    <pageNumber/>
    <edition/>
    <issue>8</issue>
    <volume>1</volume>
    <type>articler</type>
    <publisherName/>
    <publisherPlace/>
    <creatingCorporation/>
    <contributingCorporation/>
    <belongsToBibliography>0</belongsToBibliography>
    <completedDate>2018-09-27</completedDate>
    <publishedDate>--</publishedDate>
    <thesisDateAccepted>--</thesisDateAccepted>
    <title language="eng">Etching Shapes the Topography of Silicon Wafers: Lattice-Strain Enhanced Chemical Reactivity of Silicon for Efficient Solar Cells</title>
    <abstract language="eng">Multiwire sawing of silicon (Si) bricks is the state-of-the-art technology to produce multicrystalline Si solar wafers. The massive indentation of the abrasive Si carbide or diamond particles used leads to a heavily mechanically damaged layer on the wafer surface. Etching the surface layer using typical HF–HNO3–H2SiF6 acid mixtures reveals an unevenly distributed etch attack with etch rates several times higher than known for bulk Si etching. The present study follows the hypothesis that lattice strain, introduced by the sawing process, leads to an increase of the etch rate and determines the topography of the etched wafer, the so-called texture. Scratches were introduced into single crystalline Si surfaces in model experiments, and the magnitude and local distribution of lattice strain were extracted from confocal Raman microscopy measurements. The essential parameter used to describe the local reactivity of Si is the local etch rate, which was derived by confocal microscopy from the local height before and after etching. It was found that the reactivity of Si increases linearly with the magnitude of lattice strain. An increase in tensile strain raises the reactivity of Si significantly higher than an increase of compressive strain. The second decisive parameter is the reactivity of the etch mixture that correlates with the total concentration of the acid mixtures. Diluted acid mixtures with a low reactivity attack only the highest strained Si, whereas more concentrated and, therefore, more reactive acid mixtures can attack even slightly strained Si. Side effects, such as the behavior of amorphous or nanocrystalline Si and the generation of highly reactive intermediary species while etching, are discussed. The presence of unevenly distributed lattice strain of different magnitude and the resulting unevenly distributed reactivity of Si explain the features of a heterogeneous etch attack observed and the resulting topography of the etched wafer surface.</abstract>
    <parentTitle language="eng">ACS Applied Nano Materials</parentTitle>
    <identifier type="doi">10.1021/acsanm.8b00906</identifier>
    <enrichment key="BTU">an der BTU erstellt / created at BTU</enrichment>
    <author>
      <firstName>Thomas</firstName>
      <lastName>Langner</lastName>
    </author>
    <submitter>
      <firstName>Jörg</firstName>
      <lastName>Acker</lastName>
    </submitter>
    <author>
      <firstName>Tim</firstName>
      <lastName>Sieber</lastName>
    </author>
    <author>
      <firstName>Jörg</firstName>
      <lastName>Acker</lastName>
    </author>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>lattice strain</value>
    </subject>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>silicon</value>
    </subject>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>Raman microscopy</value>
    </subject>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>confocal microscopy</value>
    </subject>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>etching</value>
    </subject>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>reactivity</value>
    </subject>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>solar cell</value>
    </subject>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>mechanochemistry</value>
    </subject>
    <collection role="institutes" number="2206">FG Physikalische Chemie</collection>
  </doc>
  <doc>
    <id>23410</id>
    <completedYear/>
    <publishedYear>2018</publishedYear>
    <thesisYearAccepted/>
    <language>eng</language>
    <pageFirst/>
    <pageLast/>
    <pageNumber/>
    <edition/>
    <issue/>
    <volume/>
    <type>conferenceobject</type>
    <publisherName>Universität des Saarlandes</publisherName>
    <publisherPlace>Saarbrücken</publisherPlace>
    <creatingCorporation/>
    <contributingCorporation/>
    <belongsToBibliography>0</belongsToBibliography>
    <completedDate>2019-01-28</completedDate>
    <publishedDate>--</publishedDate>
    <thesisDateAccepted>--</thesisDateAccepted>
    <title language="eng">Raman spectroscopic study on the formation of Cu3Si</title>
    <abstract language="eng">The term “direct synthesis” is defined in the literature as the reactions between silicon and methyl chloride, hydrogen chloride and other reagents like chlorobenzene and ethyl chloride to yield various alkyl- or aryl substituted chlorosilanes.[1] These reactions have two features in common: (1) The reactivity of silicon - in terms of reaction start temperature, reaction rate and silane product distribution - is originated and controlled by the interaction with metals. (2) The reaction is fully under kinetic control since the formed silanes are the thermodynamically least stable products in the system Si-H-Cl-C.[2] Several authors consider Cu3Si as the catalytically active phase in the direct synthesis. It is assumed, that CuCl formed under the conditions of the direct synthesis reacts with Si according to Eq. 1 and 2 to yield Cu3Si.[1]&#13;
     (1)    and            (2)&#13;
The present work describes a Raman microscopic study of the reaction of Si with Cu and CuCl with special emphasize given to the identification of the Cu3Si phase and the processes occurring in the surrounding bulk Si. There is one pathway in which a solid state reaction[3] between Si and CuCl leads to a massive nucleation of Cu3Si exactly at the position of the Si/CuCl solid-solid interface. The nucleation of Cu3Si creates such an enormous lattice strain so that several high-pressure modifications of Si can be identified at the reaction site and around. The second reaction pathway is controlled by a gas phase transport of CuCl at low temperatures. This transport pathway leads to a spread of Cu in nearest neighborhood close to the CuCl particles as well to a long range transport leading to a nucleation of microscopic Cu3Si precipitates away from the CuCl particles. Further studies on the reactivity of the Cu3Si containing reaction sites were performed and will be discussed in the presentation.</abstract>
    <parentTitle language="eng">9th European Silicon Days, 9-12 September 2018, Saarbrücken, Germany, Book of abstracts</parentTitle>
    <enrichment key="BTU">an der BTU erstellt / created at BTU</enrichment>
    <author>
      <firstName>André</firstName>
      <lastName>Meißner</lastName>
    </author>
    <editor>
      <firstName>David</firstName>
      <lastName>Scheschkewitz</lastName>
    </editor>
    <submitter>
      <firstName>Jörg</firstName>
      <lastName>Acker</lastName>
    </submitter>
    <author>
      <firstName>Jörg</firstName>
      <lastName>Acker</lastName>
    </author>
    <editor>
      <firstName>Guido</firstName>
      <lastName>Kickelbick</lastName>
    </editor>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>Raman spectroscopy</value>
    </subject>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>silicon</value>
    </subject>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>lattice strain</value>
    </subject>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>copper silicide</value>
    </subject>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>direct synthesis</value>
    </subject>
    <collection role="institutes" number="2206">FG Physikalische Chemie</collection>
  </doc>
  <doc>
    <id>23411</id>
    <completedYear/>
    <publishedYear>2018</publishedYear>
    <thesisYearAccepted/>
    <language>eng</language>
    <pageFirst>S. 201</pageFirst>
    <pageLast/>
    <pageNumber/>
    <edition/>
    <issue/>
    <volume/>
    <type>conferenceobject</type>
    <publisherName>Universität des Saarlandes</publisherName>
    <publisherPlace>Saarbrücken</publisherPlace>
    <creatingCorporation/>
    <contributingCorporation/>
    <belongsToBibliography>0</belongsToBibliography>
    <completedDate>2019-01-28</completedDate>
    <publishedDate>--</publishedDate>
    <thesisDateAccepted>--</thesisDateAccepted>
    <title language="eng">Lattice strain controls the etching of solar wafer surfaces</title>
    <abstract language="eng">Multi-wire sawing using an abrasive SiC slurry or diamond wires constitutes the main slicing techniques for multi- and monocrystalline silicon crystals in photovoltaics. The massive mechanical load during the sawing process creates a wafer surface layer characterized by lattice defects, pits, fractures, rifts, cracks, amorphous Si and even some high-pressure Si modifications, otherwise known as saw damage.[1] This highly defect-rich surface causes the rapid recombination of electron-hole pairs, requiring that it be removed by etching in order to manufacture solar cells and to generate a surface morphology having a low reflectivity which directly affects the solar cell’s efficiency.&#13;
However, etching of the saw damage features of a heterogeneous and laterally unevenly distributed etch attack and a significantly higher etch rate compared to the underlying bulk silicon.[2,3] The present study is focused on the question of how mechanically introduced lattice strain in single-crystalline silicon alters the chemical reactivity of the silicon atoms affected by the strain field on a microscopic length scale. The magnitude and local distribution of lattice strain were extracted from confocal Raman microscopy measurements according to Ref. 4. One of the parameters used to describe the reactivity of silicon is the local etch rate, which was derived from the local removal before and after etching by confocal microscopy. Wet-chemical etching was performed with HF-HNO3-H2SiF6 acid mixtures of different concentrations. It was found, that the reactivity of silicon increased linearly with the magnitude of lattice strain. In particular, an increase in tensile strain led to a higher increase in reactivity compared to the increase observed with growing compressive strain. The second decisive parameter is the reactivity of the etch mixture. Diluted acid mixtures with a low reactivity attack only the highest strained Si, whereas more concentrated and therefore more reactive acid mixtures are able to attack even slightly strained Si. Side effects, such as the behavior of amorphous or nanocrystalline Si and the generation of highly reactive intermediary species while etching, are discussed.</abstract>
    <parentTitle language="eng">9th European Silicon Days, 9-12 September 2018, Saarbrücken, Germany, Book of abstracts</parentTitle>
    <enrichment key="BTU">an der BTU erstellt / created at BTU</enrichment>
    <enrichment key="opus.doi.autoCreate">false</enrichment>
    <enrichment key="opus.urn.autoCreate">false</enrichment>
    <author>
      <firstName>Thomas</firstName>
      <lastName>Langner</lastName>
    </author>
    <editor>
      <firstName>David</firstName>
      <lastName>Scheschkewitz</lastName>
    </editor>
    <submitter>
      <firstName>Jörg</firstName>
      <lastName>Acker</lastName>
    </submitter>
    <author>
      <firstName>Tim</firstName>
      <lastName>Sieber</lastName>
    </author>
    <editor>
      <firstName>Guido</firstName>
      <lastName>Kickelbick</lastName>
    </editor>
    <author>
      <firstName>Jörg</firstName>
      <lastName>Acker</lastName>
    </author>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>Raman spectroscopy</value>
    </subject>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>silicon</value>
    </subject>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>lattice strain</value>
    </subject>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>etching</value>
    </subject>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>confocal microscopy</value>
    </subject>
    <collection role="institutes" number="2206">FG Physikalische Chemie</collection>
  </doc>
  <doc>
    <id>23413</id>
    <completedYear/>
    <publishedYear>2018</publishedYear>
    <thesisYearAccepted/>
    <language>eng</language>
    <pageFirst>S. 198</pageFirst>
    <pageLast/>
    <pageNumber/>
    <edition/>
    <issue/>
    <volume/>
    <type>conferenceobject</type>
    <publisherName>Universität des Saarlandes</publisherName>
    <publisherPlace>Saarbrücken</publisherPlace>
    <creatingCorporation/>
    <contributingCorporation/>
    <belongsToBibliography>0</belongsToBibliography>
    <completedDate>2019-01-28</completedDate>
    <publishedDate>--</publishedDate>
    <thesisDateAccepted>--</thesisDateAccepted>
    <title language="eng">The influence of lattice deformations on the etch rates of potassium hydroxide on silicon</title>
    <abstract language="eng">One of the most common methods to analyse silicon materials is Raman-spectroscopy.[1] More recently there is a focus in the analysis of lattice deformations during sample preparations.[2] These deformations not only increase the chance of crack formation but also increases the chemical reactivity of the silicon towards etch processes or oxidation processes.[3] In this contribution, we will present our latest results on the influence of lattice deformations induced by scratches and saw damage on the etch rate of potassium hydroxide. The lattice deformation will be measured using Raman-microscopy and correlated with the height difference measured with confocal microscopy. It will be shown that the etch rate strongly depends on the lattice deformation and that the etch rate will increase by up to the factor 10 in areas with tensile deformation.</abstract>
    <parentTitle language="eng">9th European Silicon Days, 9-12 September 2018, Saarbrücken, Germany, Book of abstracts</parentTitle>
    <enrichment key="BTU">an der BTU erstellt / created at BTU</enrichment>
    <enrichment key="opus.doi.autoCreate">false</enrichment>
    <enrichment key="opus.urn.autoCreate">false</enrichment>
    <author>
      <firstName>Steven</firstName>
      <lastName>Herold</lastName>
    </author>
    <editor>
      <firstName>David</firstName>
      <lastName>Scheschkewitz</lastName>
    </editor>
    <submitter>
      <firstName>Jörg</firstName>
      <lastName>Acker</lastName>
    </submitter>
    <author>
      <firstName>Jörg</firstName>
      <lastName>Acker</lastName>
    </author>
    <editor>
      <firstName>Guido</firstName>
      <lastName>Kickelbick</lastName>
    </editor>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>silicon</value>
    </subject>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>etching</value>
    </subject>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>Raman spectroscopy</value>
    </subject>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>lattice strain</value>
    </subject>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>saw damage</value>
    </subject>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>confocal microscopy</value>
    </subject>
    <collection role="institutes" number="2206">FG Physikalische Chemie</collection>
  </doc>
  <doc>
    <id>23414</id>
    <completedYear/>
    <publishedYear>2018</publishedYear>
    <thesisYearAccepted/>
    <language>eng</language>
    <pageFirst>S. 197</pageFirst>
    <pageLast/>
    <pageNumber/>
    <edition/>
    <issue/>
    <volume/>
    <type>conferenceobject</type>
    <publisherName>Universität des Saarlandes</publisherName>
    <publisherPlace>Saarbrücken</publisherPlace>
    <creatingCorporation/>
    <contributingCorporation/>
    <belongsToBibliography>0</belongsToBibliography>
    <completedDate>2019-01-28</completedDate>
    <publishedDate>--</publishedDate>
    <thesisDateAccepted>--</thesisDateAccepted>
    <title language="eng">Measurement of the temperature dependence of lattice deformations in silicon using Raman microscopy</title>
    <abstract language="eng">One of the most common methods to analyse silicon materials is Raman-spectroscopy.[1] More recently there is a focus in the analysis of lattice deformations during sample preparations.[2] These deformations not only increase the chance of crack formation but also increases the chemical reactivity of the silicon towards etch processes or oxidation processes.[3] In this contribution, we will present our latest Raman evaluation technique for silicon lattice deformation and a way to control them using rapid thermal annealing. The transitions and relaxation of different lattice deformation states after the rapid heating to up to 900°C will be analysed in detail, while also the recrystallisation of amorphous silicon will be discussed from the aspects of lattice deformations. It will be shown that during the tempering the lattice deformation on scratched, indented or diamond wire sawn samples homogenises to a mainly weak tensile deformed state and that these homogenisation processes happen only up to certain critical temperatures.</abstract>
    <parentTitle language="eng">9th European Silicon Days, 9-12 September 2018, Saarbrücken, Germany, Book of abstracts</parentTitle>
    <enrichment key="BTU">an der BTU erstellt / created at BTU</enrichment>
    <enrichment key="opus.doi.autoCreate">false</enrichment>
    <enrichment key="opus.urn.autoCreate">false</enrichment>
    <author>
      <firstName>Steven</firstName>
      <lastName>Herold</lastName>
    </author>
    <editor>
      <firstName>David</firstName>
      <lastName>Scheschkewitz</lastName>
    </editor>
    <submitter>
      <firstName>Jörg</firstName>
      <lastName>Acker</lastName>
    </submitter>
    <author>
      <firstName>Jörg</firstName>
      <lastName>Acker</lastName>
    </author>
    <editor>
      <firstName>Guido</firstName>
      <lastName>Kickelbick</lastName>
    </editor>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>silicon</value>
    </subject>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>lattice strain</value>
    </subject>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>Raman microscopy</value>
    </subject>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>phase transition</value>
    </subject>
    <collection role="institutes" number="2206">FG Physikalische Chemie</collection>
  </doc>
  <doc>
    <id>23418</id>
    <completedYear/>
    <publishedYear>2016</publishedYear>
    <thesisYearAccepted/>
    <language>eng</language>
    <pageFirst>S. 124</pageFirst>
    <pageLast/>
    <pageNumber/>
    <edition/>
    <issue/>
    <volume/>
    <type>conferenceobject</type>
    <publisherName>Wielkopolska Centre for Advanced Technologies, Adam Mickiewicz University</publisherName>
    <publisherPlace>Poznań, Poland</publisherPlace>
    <creatingCorporation/>
    <contributingCorporation/>
    <belongsToBibliography>0</belongsToBibliography>
    <completedDate>2019-01-28</completedDate>
    <publishedDate>--</publishedDate>
    <thesisDateAccepted>--</thesisDateAccepted>
    <title language="eng">Lattice-strain induced chemical reactivity of silicon</title>
    <abstract language="eng">Silicon wafer for solar application are produced by multi-wire sawing from 12x12 cm2 silicon bricks. After slicing the wafer surface consists of a several micrometer surface layer of very heterogeneous constitution, the so called saw damage. The topmost layer of the saw damage consists of debris, amorphous silicon and high-pressure silicon phases followed by a very defect-rich and lattice-strained&#13;
region of fractures, cracks, and rifts caused by the rupture of the silicon lattice during the slicing process [1,2]. Such a damaged surface exhibits very poor semiconductor properties; therefore the saw damage is removed by chemical etching using mixtures of HF, HNO3 and H2SiF6 in order to produce solar cells.&#13;
Recent investigations showed that the etching of the saw damage is a very heterogeneous process [3-5]. The surface consists of spots at which the etching forms very rapidly deep grooves while other spots remain unetched over a considerably long time. Some of the rapidly formed grooves&#13;
seem to remain their shape while others grow because of an attack of the side walls, however, without making these grooves significantly deeper. So far there is no explanation for this behavior. The present work is the first study about the locally resolved etching behavior of lattice-strained&#13;
silicon. The surface of polished single-crystal wafers were scratched with a diamond tip under defined conditions. By means of confocal Raman microscopy the local state of the silicon lattice in and nearby the scratches were characterized in terms of compression and tensile stress with a lateral resolution of 2 μm. Then, the scratches were etched stepwise using HF-HNO3-H2SiF6 mixtures and measured by confocal microscopy to quantify the local removal of silicon and measured by confocal Raman microscopy to monitor the lattice state. For the first time this study reveals and quantifies the impact of tensile and compressive lattice stress on the etch rate of silicon with the major outcome, that stress leads to a significantly anisotropic etching behavior. From the time dependent development of the&#13;
scratch profiles and the topography of the surrounding wafer areas a detailed picture about the formation of highly reactive species and etching behavior against unstrained silicon is deduced.</abstract>
    <parentTitle language="eng">8th European Silicon Days 2018, Conference Proceedings</parentTitle>
    <enrichment key="BTU">an der BTU erstellt / created at BTU</enrichment>
    <enrichment key="opus.doi.autoCreate">false</enrichment>
    <enrichment key="opus.urn.autoCreate">false</enrichment>
    <author>
      <firstName>Jörg</firstName>
      <lastName>Acker</lastName>
    </author>
    <editor>
      <firstName>Bogdan</firstName>
      <lastName>Marciniec</lastName>
    </editor>
    <submitter>
      <firstName>Jörg</firstName>
      <lastName>Acker</lastName>
    </submitter>
    <author>
      <firstName>Thomas</firstName>
      <lastName>Langner</lastName>
    </author>
    <author>
      <firstName>Tim</firstName>
      <lastName>Koschwitz</lastName>
    </author>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>silicon</value>
    </subject>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>lattice strain</value>
    </subject>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>reactivity</value>
    </subject>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>etching</value>
    </subject>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>Raman microscopy</value>
    </subject>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>confocal microscopy</value>
    </subject>
    <collection role="institutes" number="2206">FG Physikalische Chemie</collection>
  </doc>
  <doc>
    <id>25760</id>
    <completedYear/>
    <publishedYear>2020</publishedYear>
    <thesisYearAccepted/>
    <language>eng</language>
    <pageFirst>47</pageFirst>
    <pageLast>56</pageLast>
    <pageNumber/>
    <edition/>
    <issue/>
    <volume/>
    <type>conferenceobject_ref</type>
    <publisherName>The Norwegian University of Science and Technology</publisherName>
    <publisherPlace>Trondheim</publisherPlace>
    <creatingCorporation/>
    <contributingCorporation/>
    <belongsToBibliography>0</belongsToBibliography>
    <completedDate>2020-06-23</completedDate>
    <publishedDate>--</publishedDate>
    <thesisDateAccepted>--</thesisDateAccepted>
    <title language="eng">Lattice strain and phase transformations in silicon introduced by the precipitation of Cu3Si</title>
    <abstract language="eng">The reaction of Si with CuCl was studied by a combination of Raman microscopy, confocal microscopy and SEM-EDX. Two reaction pathways were observed to proceed at the same time. The first one is a solid state reaction between Si and Cu or CuCl that leads to a massive nucleation of Cu3Si exactly at the interfacial contacts between CuCl and Si. This study shows how the presence of the Cu3Si phase can be clearly identified and distinguished from areas simply covered with copper by means of Raman microscopic measurements. The second reaction pathway identified proceeds via a short-range gas phase transport of CuCl at low temperatures. The immediate reaction of the transported CuCl to the Si surface causes the massive spread of Cu in the close neighborhood around the CuCl source particles, however, without a nucleation of Cu3Si. The nucleation of Cu3Si precipitates and the short-range transport of CuCl have a tremendous impact on the underlying Si matrix. Tensile- and compressive-strained Si are generated in the immediate vicinity of the precipitates and at their interface to the surrounding silicon. Indications of high-pressure modifications of Si were found. Those areas of the Si surface which are affected by the short-range transport of CuCl and covered with low concentrations of copper exhibit a significant tensile strain. As recently shown, tensile and compressive strain in Si have a significant impact on the reactivity of Si. It might be assumed that Cu3Si-induced lattice strain in Si affects the reactivity of Si in the Direct Reactions in a similar matter.</abstract>
    <parentTitle language="eng">Silicon for the Chemical and Solar Industry XV</parentTitle>
    <identifier type="isbn">978-82-997357-9-7</identifier>
    <enrichment key="BTU">an der BTU erstellt / created at BTU</enrichment>
    <enrichment key="Fprofil">1 Energiewende und Dekarbonisierung / Energy Transition and Decarbonisation</enrichment>
    <author>
      <firstName>André</firstName>
      <lastName>Meißner</lastName>
    </author>
    <editor>
      <firstName>Birger</firstName>
      <lastName>Andresen</lastName>
    </editor>
    <submitter>
      <firstName>Jörg</firstName>
      <lastName>Acker</lastName>
    </submitter>
    <author>
      <firstName>Tim</firstName>
      <lastName>Sieber</lastName>
    </author>
    <editor>
      <firstName>Harry</firstName>
      <lastName>Rong</lastName>
    </editor>
    <author>
      <firstName>Jörg</firstName>
      <lastName>Acker</lastName>
    </author>
    <editor>
      <firstName>Merete</firstName>
      <lastName>Tangstad</lastName>
    </editor>
    <editor>
      <firstName>Halvard</firstName>
      <lastName>Tveit</lastName>
    </editor>
    <editor>
      <firstName>Ingrid</firstName>
      <lastName>Page</lastName>
    </editor>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>silicon</value>
    </subject>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>direct synthesis</value>
    </subject>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>copper silicide</value>
    </subject>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>cuprous chloride</value>
    </subject>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>Raman</value>
    </subject>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>lattice strain</value>
    </subject>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>reactivity</value>
    </subject>
    <collection role="institutes" number="2206">FG Physikalische Chemie</collection>
  </doc>
  <doc>
    <id>26695</id>
    <completedYear/>
    <publishedYear>2021</publishedYear>
    <thesisYearAccepted/>
    <language>eng</language>
    <pageFirst/>
    <pageLast/>
    <pageNumber>11</pageNumber>
    <edition/>
    <issue/>
    <volume>123</volume>
    <type>articler</type>
    <publisherName/>
    <publisherPlace/>
    <creatingCorporation/>
    <contributingCorporation/>
    <belongsToBibliography>0</belongsToBibliography>
    <completedDate>2021-01-11</completedDate>
    <publishedDate>--</publishedDate>
    <thesisDateAccepted>--</thesisDateAccepted>
    <title language="eng">Lattice strain enhanced acidic etching on as cut sawn silicon wafer</title>
    <abstract language="eng">The mechanical processing of silicon wafers leads to a heterogeneous lateral strain distribution and various modifications of the silicon, both of which influence the resulting topography after acid etching. In this study we investigate the influence of local strains and the initial topography of slurry and diamond wire saw wafers on the acid etching mechanism. The strain distribution is quantified and qualified by Raman microscopy before and after thermal treatment, while the topography is characterized by confocal microscopy before and after etching. The thermal treatment was used to selectively relax strains and investigate the effect of the individual strains on the etching mechanism. We found that amorphous silicon and compressive strained silicon are mainly present on the top most surface of the saw damage and do not influence the chemical reactivity of acid etching. In contrast, highly reactive tensile strained silicon is found up to 2.7 μm deep in the saw damage and acts as an etching mask. Rapid etching of the tensile strained silicon by HF/HNO3/H2SiF6 leads to the formation of cracks with high local concentrations of intermediate species. These strains induced cracks are etched out together with the original saw damage induced cracks and trenches and form the final surface after etching. Furthermore, we can show how the tensile strain strength must have a relative Raman shift of at least −2 cm−1 to have an effect on the local etch rate. Our data demonstrate how mechanical treatment in combination with thermal treatment and acidic etching can be used to optimize the resulting topography for applications like photovoltaics. In addition, it provides a deeper insight into the acid etching mechanism for non-planar silicon wafers.</abstract>
    <parentTitle language="eng">Materials Science in Semiconductor Processing</parentTitle>
    <identifier type="url">https://www.sciencedirect.com/science/article/abs/pii/S1369800120315080</identifier>
    <identifier type="doi">10.1016/j.mssp.2020.105575</identifier>
    <identifier type="issn">1873-4081</identifier>
    <identifier type="issn">1369-8001</identifier>
    <enrichment key="BTU">an der BTU erstellt / created at BTU</enrichment>
    <enrichment key="Artikelnummer">105575</enrichment>
    <enrichment key="opus.source">publish</enrichment>
    <enrichment key="opus.doi.autoCreate">false</enrichment>
    <enrichment key="opus.urn.autoCreate">false</enrichment>
    <enrichment key="Fprofil">1 Energiewende und Dekarbonisierung / Energy Transition and Decarbonisation</enrichment>
    <author>
      <firstName>Steven</firstName>
      <lastName>Herold</lastName>
    </author>
    <submitter>
      <firstName>Jörg</firstName>
      <lastName>Acker</lastName>
    </submitter>
    <author>
      <firstName>Jörg</firstName>
      <lastName>Acker</lastName>
    </author>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>silicon</value>
    </subject>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>lattice strain</value>
    </subject>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>Raman microscopy</value>
    </subject>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>confocal microscopy</value>
    </subject>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>etching</value>
    </subject>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>reactivity</value>
    </subject>
    <collection role="institutes" number="2206">FG Physikalische Chemie</collection>
  </doc>
  <doc>
    <id>27729</id>
    <completedYear/>
    <publishedYear>2021</publishedYear>
    <thesisYearAccepted/>
    <language>eng</language>
    <pageFirst/>
    <pageLast/>
    <pageNumber>6</pageNumber>
    <edition/>
    <issue/>
    <volume>135</volume>
    <type>articler</type>
    <publisherName/>
    <publisherPlace/>
    <creatingCorporation/>
    <contributingCorporation/>
    <belongsToBibliography>0</belongsToBibliography>
    <completedDate>2021-08-25</completedDate>
    <publishedDate>--</publishedDate>
    <thesisDateAccepted>--</thesisDateAccepted>
    <title language="eng">Strain enhanced chemical oxidation of silicon wafer</title>
    <abstract language="eng">The effect of strain through mechanical processing on the formation of silicon dioxide, one of the most important chemical reactions for the fabrication of semiconductors, biosensors or photovoltaics, has not yet been studied in detail. In this study, we use the surface modification of silicon by alkylsilanes and Raman microscopy techniques to visualise where different oxidants react preferentially on mechanically processed surfaces. We found that HNO3, H2O2 as well as H2SiF6 only oxidise tensile strained silicon areas and do not oxidise unstrained silicon even after long reaction times. Furthermore, a comparison between H2O2 and HNO3 in the presence of HF was also carried out and it was shown that H2O2/HF only etches away tensile strained areas, whereas HNO3/HF initially attacks the tensile strained areas but also forms NOx species. These NOx species then lead to a strain unselective, geometry-based etching mechanism. These results lead to new possibilities in strain lithography,high-precision etching, as well as in the structuring of biosensors and localisation of surface modifications.</abstract>
    <parentTitle language="eng">Materials Science in Semiconductor Processing</parentTitle>
    <identifier type="doi">10.1016/j.mssp.2021.106105</identifier>
    <identifier type="issn">1369-8001</identifier>
    <enrichment key="BTU">an der BTU erstellt / created at BTU</enrichment>
    <enrichment key="Artikelnummer">106105</enrichment>
    <enrichment key="opus.source">publish</enrichment>
    <enrichment key="opus.doi.autoCreate">false</enrichment>
    <enrichment key="opus.urn.autoCreate">false</enrichment>
    <enrichment key="Fprofil">1 Energiewende und Dekarbonisierung / Energy Transition and Decarbonisation</enrichment>
    <author>
      <firstName>Steven</firstName>
      <lastName>Herold</lastName>
    </author>
    <submitter>
      <firstName>Jörg</firstName>
      <lastName>Acker</lastName>
    </submitter>
    <author>
      <firstName>Jörg</firstName>
      <lastName>Acker</lastName>
    </author>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>silicon</value>
    </subject>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>lattice strain</value>
    </subject>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>oxidation</value>
    </subject>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>Raman</value>
    </subject>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>confocal microscopy</value>
    </subject>
    <collection role="institutes" number="2206">FG Physikalische Chemie</collection>
  </doc>
</export-example>
