<?xml version="1.0" encoding="utf-8"?>
<export-example>
  <doc>
    <id>19657</id>
    <completedYear/>
    <publishedYear>2017</publishedYear>
    <thesisYearAccepted/>
    <language>eng</language>
    <pageFirst>S. 202</pageFirst>
    <pageLast/>
    <pageNumber/>
    <edition/>
    <issue/>
    <volume/>
    <type>conferenceobject</type>
    <publisherName>Deutsche Physikalische Gesellschaft</publisherName>
    <publisherPlace>Bad Honnef</publisherPlace>
    <creatingCorporation/>
    <contributingCorporation/>
    <belongsToBibliography>0</belongsToBibliography>
    <completedDate>2017-03-23</completedDate>
    <publishedDate>--</publishedDate>
    <thesisDateAccepted>--</thesisDateAccepted>
    <title language="eng">Analysis of surface oxidation of TiON ALD films</title>
    <abstract language="eng">Titanium oxynitride (TiON) films are interesting due to their remarkable optical and electronic properties which strongly depend on the O/N ratio. However, it is known that films containing Ti are prone to oxidation in contact with the air [1]. In this work, we study the thickness of a surface oxidation layer which is inherently formed on&#13;
the atomic layer deposition (ALD) grown TiON/TiN films on Si substrate. We use an Ar+&#13;
ion bombardment source and X-ray photoelectron spectroscopy (XPS) for this analysis. We calibrate the sputter rate by using substrate signal intensity decay (here Si 2p) in the XPS&#13;
spectra of the 5 nm thick TiON sample accordingly. This rate is assumed to be constant when films with a larger thickness are analyzed. We find that the surface oxidation layer is about 1 nm thick, independent on the detailed ALD parameters of the films. The TiN films found underneath are close to the stoichiometric values and have a residual O content below 5%. Finally, we compare these data to our previous&#13;
results collected with synchrotron-based radiation source [2,3].&#13;
References: [1] Sowinska et al., Applied Physics Letters 100, 233509&#13;
(2012). [2] M. Sowinska et al., Applied Surface Science 381, 42-47 (2016). [3] M. Sowińska et al., Journal of Vacuum Science and Tech-&#13;
nology A, 01A12734 (2016).</abstract>
    <parentTitle language="eng">Verhandlungen der Deutschen Physikalischen Gesellschaft</parentTitle>
    <identifier type="issn">0420-0195</identifier>
    <identifier type="url">http://www.dpg-verhandlungen.de/year/2017/conference/dresden/part/ds/session/21/contribution/7</identifier>
    <enrichment key="BTU">an der BTU erstellt / created at BTU</enrichment>
    <enrichment key="UBICOseries">Verhandlungen der Deutschen Physikalischen Gesellschaft ; Reihe 6, Band 52,2</enrichment>
    <author>
      <firstName>Justyna</firstName>
      <lastName>Łobaza</lastName>
    </author>
    <submitter>
      <firstName>Karsten</firstName>
      <lastName>Henkel</lastName>
    </submitter>
    <author>
      <firstName>Małgorzata</firstName>
      <lastName>Kot</lastName>
    </author>
    <author>
      <firstName>Dieter</firstName>
      <lastName>Schmeißer</lastName>
    </author>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>titanium oxynitride</value>
    </subject>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>X-Rax photoelectron spectroscopy</value>
    </subject>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>depth profiling</value>
    </subject>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>sputtering</value>
    </subject>
    <collection role="institutes" number="1503">FG Angewandte Physik und Halbleiterspektroskopie</collection>
  </doc>
</export-example>
