@misc{PerezMaldonadoPerezBoschQuesadaetal., author = {Perez, Eduardo and Maldonado, David and Perez-Bosch Quesada, Emilio and Mahadevaiah, Mamathamba Kalishettyhalli and Jimenez-Molinos, Francisco and Wenger, Christian}, title = {Parameter Extraction Methods for Assessing Device-to-Device and Cycle-to-Cycle Variability of Memristive Devices at Wafer Scale}, series = {IEEE Transactions on Electron Devices}, volume = {70}, journal = {IEEE Transactions on Electron Devices}, number = {1}, issn = {0018-9383}, doi = {10.1109/TED.2022.3224886}, pages = {360 -- 365}, abstract = {The stochastic nature of the resistive switching (RS) process in memristive devices makes device-to-device (DTD) and cycle-to-cycle (CTC) variabilities relevant magnitudes to be quantified and modeled. To accomplish this aim, robust and reliable parameter extraction methods must be employed. In this work, four different extraction methods were used at the production level (over all the 108 devices integrated on 200-mm wafers manufactured in the IHP 130-nm CMOS technology) in order to obtain the corresponding collection of forming, reset, and set switching voltages. The statistical analysis of the experimental data (mean and standard deviation (SD) values) was plotted by using heat maps, which provide a good summary of the whole data at a glance and, in addition, an easy manner to detect inhomogeneities in the fabrication process.}, language = {en} } @misc{BaroniGlukhovPerezetal., author = {Baroni, Andrea and Glukhov, Artem and Perez, Eduardo and Wenger, Christian and Ielmini, Daniele and Olivo, Piero and Zambelli, Cristian}, title = {Low Conductance State Drift Characterization and Mitigation in Resistive Switching Memories (RRAM) for Artificial Neural Networks}, series = {IEEE Transactions on Device and Materials Reliability}, volume = {22}, journal = {IEEE Transactions on Device and Materials Reliability}, number = {3}, issn = {1530-4388}, doi = {10.1109/TDMR.2022.3182133}, pages = {340 -- 347}, abstract = {The crossbar structure of Resistive-switching random access memory (RRAM) arrays enabled the In-Memory Computing circuits paradigm, since they imply the native acceleration of a crucial operations in this scenario, namely the Matrix-Vector-Multiplication (MVM). However, RRAM arrays are affected by several issues materializing in conductance variations that might cause severe performance degradation. A critical one is related to the drift of the low conductance states appearing immediately at the end of program and verify algorithms that are mandatory for an accurate multi-level conductance operation. In this work, we analyze the benefits of a new programming algorithm that embodies Set and Reset switching operations to achieve better conductance control and lower variability. Data retention analysis performed with different temperatures for 168 hours evidence its superior performance with respect to standard programming approach. Finally, we explored the benefits of using our methodology at a higher abstraction level, through the simulation of an Artificial Neural Network for image recognition task (MNIST dataset). The accuracy achieved shows higher performance stability over temperature and time.}, language = {en} } @misc{FranckDabrowskiSchubertetal., author = {Franck, Max and Dabrowski, Jaroslaw and Schubert, Markus Andreas and Wenger, Christian and Lukosius, Mindaugas}, title = {Towards the Growth of Hexagonal Boron Nitride on Ge(001)/Si Substrates by Chemical Vapor Deposition}, series = {Nanomaterials}, volume = {12}, journal = {Nanomaterials}, number = {19}, issn = {2079-4991}, doi = {10.3390/nano12193260}, abstract = {The growth of hexagonal boron nitride (hBN) on epitaxial Ge(001)/Si substrates via high-vacuum chemical vapor deposition from borazine is investigated for the first time in a systematic manner. The influences of the process pressure and growth temperature in the range of 10-7-10-3 mbar and 900-980 °C, respectively, are evaluated with respect to morphology, growth rate, and crystalline quality of the hBN films. At 900 °C, nanocrystalline hBN films with a lateral crystallite size of ~2-3 nm are obtained and confirmed by high-resolution transmission electron microscopy images. X-ray photoelectron spectroscopy confirms an atomic N:B ratio of 1 ± 0.1. A three-dimensional growth mode is observed by atomic force microscopy. Increasing the process pressure in the reactor mainly affects the growth rate, with only slight effects on crystalline quality and none on the principle growth mode. Growth of hBN at 980 °C increases the average crystallite size and leads to the formation of 3-10 well-oriented, vertically stacked layers of hBN on the Ge surface. Exploratory ab initio density functional theory simulations indicate that hBN edges are saturated by hydrogen, and it is proposed that partial de-saturation by H radicals produced on hot parts of the set-up is responsible for the growth}, language = {en} } @misc{StrobelAlvaradoChavarinWengeretal., author = {Strobel, Carsten and Alvarado Chavarin, Carlos and Wenger, Christian and Albert, Matthias and Mikolajick, Thomas}, title = {Vertical Graphene-Based Transistors for Power Electronics, Optoelectronics and Radio-Frequency Applications}, series = {IEEE Nanotechnology Materials and Devices Conference (NMDC), Paestum, Italy, 22-25 October 2023}, journal = {IEEE Nanotechnology Materials and Devices Conference (NMDC), Paestum, Italy, 22-25 October 2023}, publisher = {Institute of Electrical and Electronics Engineers (IEEE)}, isbn = {979-8-3503-3546-0}, issn = {2473-0718}, doi = {10.1109/NMDC57951.2023.10344102}, pages = {196 -- 201}, abstract = {The combination of two-dimensional materials, such as graphene, with established thin films offers great opportunities for enabling next-generation vertical transistors for various applications. This paper gives a brief overview about different vertical transistor concepts using twodimensional materials proposed so far, e.g. the hot electron transistor and the Barristor. With the arrival of twodimensional materials, the hot electron transistor also experienced a revival with predicted cut-off frequencies in the THz range. The Barristor overcomes the weak current saturation of lateral graphene field-effect transistors and high on-off ratios up to 107 were demonstrated, which are suitable parameters for logic applications. By combining a semiconductor-graphene-semiconductor design of the simplest hot electron transistor with the Barristor operating principle a new device, called graphene adjustable-barriers transistor, can be realized. This new device concept provides the potential for RF, power electronics, and optoelectronic applications.}, language = {en} } @misc{StankeWengerBieretal., author = {Stanke, Sandra and Wenger, Christian and Bier, Frank F. and H{\"o}lzel, Ralph}, title = {AC electrokinetic immobilization of influenza virus}, series = {Electrophoresis}, volume = {43}, journal = {Electrophoresis}, number = {12}, issn = {1522-2683}, doi = {10.1002/elps.202100324}, pages = {1309 -- 1321}, abstract = {The use of alternating current (AC) electrokinetic forces, like dielectrophoresis and AC electroosmosis, as a simple and fast method to immobilize sub-micrometer objects onto nanoelectrode arrays is presented. Due to its medical relevance, the influenza virus is chosen as a model organism. One of the outstanding features is that the immobilization of viral material to the electrodes can be achieved permanently, allowing subsequent handling independently from the electrical setup. Thus, by using merely electric fields, we demonstrate that the need of prior chemical surface modification could become obsolete. The accumulation of viral material over time is observed by fluorescence microscopy. The influences of side effects like electrothermal fluid flow, causing a fluid motion above the electrodes and causing an intensity gradient within the electrode array, are discussed. Due to the improved resolution by combining fluorescence microscopy with deconvolution, it is shown that the viral material is mainly drawn to the electrode edge and to a lesser extent to the electrode surface. Finally, areas of application for this functionalization technique are presented.}, language = {en} } @misc{PerezBoschQuesadaRizziGuptaetal., author = {Perez-Bosch Quesada, Emilio and Rizzi, Tommaso and Gupta, Aditya and Mahadevaiah, Mamathamba Kalishettyhalli and Schubert, Andreas and Pechmann, Stefan and Jia, Ruolan and Uhlmann, Max and Hagelauer, Amelie and Wenger, Christian and Perez, Eduardo}, title = {Multi-Level Programming on Radiation-Hard 1T1R Memristive Devices for In-Memory Computing}, series = {14th Spanish Conference on Electron Devices (CDE 2023), Valencia, Spain, 06-08 June 2023}, journal = {14th Spanish Conference on Electron Devices (CDE 2023), Valencia, Spain, 06-08 June 2023}, publisher = {Institute of Electrical and Electronics Engineers (IEEE)}, isbn = {979-8-3503-0240-0}, doi = {10.1109/CDE58627.2023.10339525}, pages = {4}, abstract = {This work presents a quasi-static electrical characterization of 1-transistor-1-resistor memristive structures designed following hardness-by-design techniques integrated in the CMOS fabrication process to assure multi-level capabilities in harsh radiation environments. Modulating the gate voltage of the enclosed layout transistor connected in series with the memristive device, it was possible to achieve excellent switching capabilities from a single high resistance state to a total of eight different low resistance states (more than 3 bits). Thus, the fabricated devices are suitable for their integration in larger in-memory computing systems and in multi-level memory applications. Index Terms—radiation-hard, hardness-by-design, memristive devices, Enclosed Layout Transistor, in-memory computing}, language = {en} } @misc{SuetbasNgWesseletal., author = {S{\"u}tbas, Batuhan and Ng, Herman Jalli and Wessel, Jan and K{\"o}lpin, Alexander and Kahmen, Gerhard}, title = {A V-band Low-Power and Compact Down-Conversion Mixer with Low LO Power in 130-nm SiGe BiCMOS Technology}, series = {16th European Microwave Integrated Circuits Conference (EuMIC), 03-04 April 2022, London, United Kingdom}, journal = {16th European Microwave Integrated Circuits Conference (EuMIC), 03-04 April 2022, London, United Kingdom}, doi = {10.23919/EuMIC50153.2022.9783953}, pages = {4}, language = {en} } @misc{ZahariPerezMahadevaiahetal., author = {Zahari, Finn and Perez, Eduardo and Mahadevaiah, Mamathamba Kalishettyhalli and Kohlstedt, Hermann and Wenger, Christian and Ziegler, Martin}, title = {Analogue pattern recognition with stochastic switching binary CMOS‑integrated memristive devices}, series = {Scientific Reports}, volume = {10}, journal = {Scientific Reports}, issn = {2045-2322}, doi = {10.1038/s41598-020-71334-x}, pages = {15}, abstract = {Biological neural networks outperform todays computer technology in terms of power consumption and computing speed when associative tasks, like pattern recognition, are to be solved. The analogue and massive parallel in-memory computing in biology differs strongly with conventional transistor electronics using the von Neumann architecture. Therefore, novel bio-inspired computing architectures are recently highly investigated in the area of neuromorphic computing. Here, memristive devices, which serve as non-volatile resistive memory, are used to emulate the plastic behaviour of biological synapses. In particular, CMOS integrated resistive random access memory (RRAM) devices are promising candidates to extend conventional CMOS technology in neuromorphic systems. However, dealing with the inherent stochasticity of the resistive switching effect can be challenging for network performance. In this work, the probabilistic switching is exploited to emulate stochastic plasticity with fully CMOS integrated binary RRAM devices. Two different RRAM technologies with different device variabilities are investigated in detail and their use in a stochastic artificial neural network (StochANN) to solve the MINST pattern recognition task is examined. A mixed-signal implementation with hardware synapses and software neurons as well as numerical simulations show the proposed concept of stochastic computing is able to handle analogue data with binary memory cells.}, language = {en} } @misc{ZanottiPuglisiMiloetal., author = {Zanotti, Tommaso and Puglisi, Francesco Maria and Milo, Valerio and Perez, Eduardo and Mahadevaiah, Mamathamba Kalishettyhalli and Ossorio, {\´O}scar G. and Wenger, Christian and Pavan, Paolo and Olivo, Piero and Ielmini, Daniele}, title = {Reliability of Logic-in-Memory Circuits in Resistive Memory Arrays}, series = {IEEE Transactions on Electron Devices}, volume = {67}, journal = {IEEE Transactions on Electron Devices}, number = {11}, issn = {0018-9383}, doi = {10.1109/TED.2020.3025271}, pages = {4611 -- 4615}, abstract = {Logic-in-memory (LiM) circuits based on resistive random access memory (RRAM) devices and the material implication logic are promising candidates for the development of low-power computing devices that could fulfill the growing demand of distributed computing systems. However, these circuits are affected by many reliability challenges that arise from device nonidealities (e.g., variability) and the characteristics of the employed circuit architecture. Thus, an accurate investigation of the variability at the array level is needed to evaluate the reliability and performance of such circuit architectures. In this work, we explore the reliability and performance of smart IMPLY (SIMPLY) (i.e., a recently proposed LiM architecture with improved reliability and performance) on two 4-kb RRAM arrays based on different resistive switching oxides integrated in the back end of line (BEOL) of the 0.25- μm BiCMOS process. We analyze the tradeoff between reliability and energy consumption of SIMPLY architecture by exploiting the results of an extensive array-level variability characterization of the two technologies. Finally, we study the worst case performance of a full adder implemented with the SIMPLY architecture and benchmark it on the analogous CMOS implementation.}, language = {en} } @misc{RomeroZalizPerezJimenezMolinosetal., author = {Romero-Zaliz, Roc{\´i}o and Perez, Eduardo and Jimenez-Molinos, Francisco and Wenger, Christian and Roldan, Juan Bautista}, title = {Study of Quantized Hardware Deep Neural Networks Based on Resistive Switching Devices, Conventional versus Convolutional Approaches}, series = {Electronics (MDPI)}, volume = {10}, journal = {Electronics (MDPI)}, number = {3}, issn = {2079-9292}, doi = {10.3390/electronics10030346}, pages = {14}, abstract = {A comprehensive analysis of two types of artificial neural networks (ANN) is performed to assess the influence of quantization on the synaptic weights. Conventional multilayer-perceptron (MLP) and convolutional neural networks (CNN) have been considered by changing their features in the training and inference contexts, such as number of levels in the quantization process, the number of hidden layers on the network topology, the number of neurons per hidden layer, the image databases, the number of convolutional layers, etc. A reference technology based on 1T1R structures with bipolar memristors including HfO2 dielectrics was employed, accounting for different multilevel schemes and the corresponding conductance quantization algorithms. The accuracy of the image recognition processes was studied in depth. This type of studies are essential prior to hardware implementation of neural networks. The obtained results support the use of CNNs for image domains. This is linked to the role played by convolutional layers at extracting image features and reducing the data complexity. In this case, the number of synaptic weights can be reduced in comparison to conventional MLPs.}, language = {en} } @misc{SoltaniZarrinRockendorfWenger, author = {Soltani Zarrin, Pouya and Rockendorf, Niels and Wenger, Christian}, title = {In-Vitro Classification of Saliva Samples of COPD Patients and Healthy Controls Using Machine Learning Tools}, series = {IEEE Access}, volume = {Vol. 8}, journal = {IEEE Access}, issn = {2169-3536}, doi = {10.1109/ACCESS.2020.3023971}, pages = {168053 -- 168060}, abstract = {Chronic Obstructive Pulmonary Disease (COPD) is a life-threatening lung disease and a major cause of morbidity and mortality worldwide. Although a curative therapy has yet to be found, permanent monitoring of biomarkers that reflect the disease progression plays a pivotal role for the effective management of COPD. The accurate examination of respiratory tract fluids like saliva is a promising approach for staging the disease and predicting its upcoming exacerbations in a Point-of-Care (PoC) environment. Nonetheless, this approach is only feasible by concurrent consideration of patients' demographic and medical parameters. Therefore, Machine Learning (ML) tools are necessary for the comprehensive recognition of COPD in a PoC setting. As a result, the objective of this work was to implement ML tools on the data acquired from characterizing saliva samples of COPD patients and healthy controls for classification purposes. First, a permittivity biosensor was used to characterize dielectric properties of saliva samples and, subsequently, ML tools were applied on the acquired data for classification. The XGBoost gradient boosting algorithm provided a high classification accuracy of 91.25\%, making it a promising model for COPD recognition. Integration of this model on a neuromorphic chip, in the future, will enable the real-time detection of COPD in PoC, with low energy consumption and high patient privacy.}, language = {en} } @misc{BogunPerezBoschQuesadaPerezetal., author = {Bogun, Nicolas and Perez-Bosch Quesada, Emilio and Perez, Eduardo and Wenger, Christian and Kloes, Alexander and Schwarz, Mike}, title = {Analytical Calculation of Inference in Memristor-based Stochastic Artificial Neural Networks}, series = {29th International Conference on Mixed Design of Integrated Circuits and System (MIXDES), 23-24 June 2022 , Wrocław, Poland}, journal = {29th International Conference on Mixed Design of Integrated Circuits and System (MIXDES), 23-24 June 2022 , Wrocław, Poland}, isbn = {978-83-63578-22-0}, doi = {10.23919/MIXDES55591.2022.9838321}, pages = {83 -- 88}, abstract = {The impact of artificial intelligence on human life has increased significantly in recent years. However, as the complexity of problems rose aswell, increasing system features for such amount of data computation became troublesome due to the von Neumann's computer architecture. Neuromorphic computing aims to solve this problem by mimicking the parallel computation of a human brain. For this approach, memristive devices are used to emulate the synapses of a human brain. Yet, common simulations of hardware based networks require time consuming Monte-Carlo simulations to take into account the stochastic switching of memristive devices. This work presents an alternative concept making use of the convolution of the probability distribution functions (PDF) of memristor currents by its equivalent multiplication in Fourier domain. An artificial neural network is accordingly implemented to perform the inference stage with handwritten digits.}, language = {en} } @misc{SoltaniZarrinZahariMahadevaiahetal., author = {Soltani Zarrin, Pouya and Zahari, Finn and Mahadevaiah, Mamathamba Kalishettyhalli and Perez, Eduardo and Kohlstedt, Hermann and Wenger, Christian}, title = {Neuromorphic on‑chip recognition of saliva samples of COPD and healthy controls using memristive devices}, series = {Scientific Reports}, volume = {10}, journal = {Scientific Reports}, issn = {2045-2322}, doi = {10.1038/s41598-020-76823-7}, abstract = {Chronic Obstructive Pulmonary Disease (COPD) is a life-threatening lung disease, affecting millions of people worldwide. Implementation of Machine Learning (ML) techniques is crucial for the effective management of COPD in home-care environments. However, shortcomings of cloud-based ML tools in terms of data safety and energy efficiency limit their integration with low-power medical devices. To address this, energy efficient neuromorphic platforms can be used for the hardware-based implementation of ML methods. Therefore, a memristive neuromorphic platform is presented in this paper for the on-chip recognition of saliva samples of COPD patients and healthy controls. The results of its performance evaluations showed that the digital neuromorphic chip is capable of recognizing unseen COPD samples with accuracy and sensitivity values of 89\% and 86\%, respectively. Integration of this technology into personalized healthcare devices will enable the better management of chronic diseases such as COPD.}, language = {en} } @misc{PerezMaldonadoAcaletal., author = {Perez, Eduardo and Maldonado, David and Acal, Christian and Ruiz-Castro, Juan Eloy and Aguilera, Ana Mar{\´i}a and Jimenez-Molinos, Francisco and Roldan, Juan Bautista and Wenger, Christian}, title = {Advanced Temperature Dependent Statistical Analysis of Forming Voltage Distributions for Three Different HfO2-Based RRAM Technologies}, series = {Solid State Electronics}, volume = {176}, journal = {Solid State Electronics}, issn = {0038-1101}, pages = {6}, abstract = {In this work, voltage distributions of forming operations are analyzed by using an advanced statistical approach based on phase-type distributions (PHD). The experimental data were collected from batches of 128 HfO2-based RRAM devices integrated in 4-kbit arrays. Three di erent switching oxides, namely, polycrystalline HfO2, amorphous HfO2, and Al-doped HfO2, were tested in the temperature range from -40 to 150 oC. The variability of forming voltages has been usually studied by using the Weibull distribution (WD). However, the performance of the PHD analysis demonstrated its ability to better model this crucial operation. The capacity of the PHD to reproduce the experimental data has been validated by means of the Kolmogorov-Smirnov test, while the WD failed in many of the cases studied. In addition, PHD allows to extract information about intermediate probabilistic states that occur in the forming process and the transition probabilities between them; in this manner, we can deepen on the conductive lament formation physics. In particular, the number of intermediate states can be related to the device variability.}, language = {en} } @misc{LukosiusLukoseLiskeretal., author = {Lukosius, Mindaugas and Lukose, Rasuolė and Lisker, Marco and Luongo, G. and Elviretti, M. and Mai, Andreas and Wenger, Christian}, title = {Graphene Research in 200 mm CMOS Pilot Line}, series = {45th Jubilee International Convention on Information, Communication and Electronic Technology (MIPRO), 2022}, journal = {45th Jubilee International Convention on Information, Communication and Electronic Technology (MIPRO), 2022}, isbn = {978-953-233-103-5}, issn = {2623-8764}, doi = {10.23919/MIPRO55190.2022.9803362}, pages = {113 -- 117}, abstract = {Due to the unique electronic structures, graphene and other 2D Materials are considered as materials which can enable and extend the functionalities and performance in a large variety of applications, among them in microelectronics. At this point, the investigation and preparation of graphene devices in conditions resembling as close as possible the Si technology environment is of highest importance.Towards these goals, this paper focuses on the full spectra of graphene research aspects in 200mm pilot line. We investigated different process module developments such as CMOS compatible growth of high quality graphene on germanium and its growth mechanisms, transfer related challenges on target substrates, patterning, passivation and various concepts of contacting of graphene on a full 200 mm wafers. Finally, we fabricated proof-of-concept test structures e.g. TLM, Hall bars and capacitor structures to prove the feasibility of graphene processing in the pilot line of IHP.}, language = {en} } @misc{BaroniZambelliOlivoetal., author = {Baroni, Andrea and Zambelli, Cristian and Olivo, Piero and Perez, Eduardo and Wenger, Christian and Ielmini, Daniele}, title = {Tackling the Low Conductance State Drift through Incremental Reset and Verify in RRAM Arrays}, series = {2021 IEEE International Integrated Reliability Workshop (IIRW), South Lake Tahoe, CA, USA, 10 December 2021}, journal = {2021 IEEE International Integrated Reliability Workshop (IIRW), South Lake Tahoe, CA, USA, 10 December 2021}, publisher = {Institute of Electrical and Electronics Engineers (IEEE)}, isbn = {978-1-6654-1794-5}, issn = {2374-8036}, doi = {10.1109/IIRW53245.2021.9635613}, pages = {5}, abstract = {Resistive switching memory (RRAM) is a promising technology for highly efficient computing scenarios. RRAM arrays enabled the acceleration of neural networks for artificial intelligence and the creation of In-Memory Computing circuits. However, the arrays are affected by several issues materializing in conductance variations that might cause severe performance degradation in those applications. Among those, one is related to the drift of the low conductance states appearing immediately at the end of program and verify algorithms that are fundamental for an accurate Multi-level conductance operation. In this work, we tackle the issue by developing an Incremental Reset and Verify technique showing enhanced variability and reliability features compared with a traditional refresh-based approach.}, language = {en} } @misc{MiloAnzaloneZambellietal., author = {Milo, Valerio and Anzalone, Francesco and Zambelli, Cristian and Perez, Eduardo and Mahadevaiah, Mamathamba Kalishettyhalli and Ossorio, {\´O}scar G. and Olivo, Piero and Wenger, Christian and Ielmini, Daniele}, title = {Optimized programming algorithms for multilevel RRAM in hardware neural networks}, series = {IEEE International Reliability Physics Symposium (IRPS), 2021}, journal = {IEEE International Reliability Physics Symposium (IRPS), 2021}, isbn = {978-1-7281-6894-4}, issn = {1938-1891}, doi = {10.1109/IRPS46558.2021.9405119}, abstract = {A key requirement for RRAM in neural network accelerators with a large number of synaptic parameters is the multilevel programming. This is hindered by resistance imprecision due to cycle-to-cycle and device-to-device variations. Here, we compare two multilevel programming algorithms to minimize resistance variations in a 4-kbit array of HfO 2 RRAM. We show that gate-based algorithms have the highest reliability. The optimized scheme is used to implement a neural network with 9-level weights, achieving 91.5\% (vs. software 93.27\%) in MNIST recognition.}, language = {en} } @misc{StrobelAlvaradoChavarinVoelkeletal., author = {Strobel, Carsten and Alvarado Chavarin, Carlos and V{\"o}lkel, Sandra and Jahn, Andreas and Hiess, Andre and Knaut, Martin and Albert, Matthias and Wenger, Christian and Steinke, Olaff and Stephan, Ulf and R{\"o}hlecke, S{\"o}ren and Mikolajick, Thomas}, title = {Enhanced Electrical Properties of Optimized Vertical Graphene-Base Hot Electron Transistors}, series = {ACS Applied Electronic Materials}, volume = {5}, journal = {ACS Applied Electronic Materials}, number = {3}, issn = {2637-6113}, doi = {10.1021/acsaelm.2c01725}, pages = {1670 -- 1675}, abstract = {The arrival of high-mobility two-dimensional materials like graphene leads to the renaissance of former vertical semiconductor-metal-semiconductor (SMS) hot electron transistors. Because of the monolayer thickness of graphene, improved SMS transistors with a semimetallic graphene-base electrode are now feasible for high-frequency applications. In this study we report about a device that consists of amorphous silicon, graphene, and crystalline silicon. For the first time, this device is fabricated by a four-mask lithography process which leads to significant improvements in the device performance. A strongly increased common-emitter current gain of 2\% could be achieved while the on-off ratio improved to 1.6 × 105, which is already higher than predicted theoretically. This could be mainly attributed to better interface characteristics and decreased lateral dimensions of the devices. A cutoff frequency of approximately 26 MHz could be forecasted based on the DC measurements of the device.}, language = {en} } @misc{MaiMarschmeyerPeczeketal., author = {Mai, Christian and Marschmeyer, Steffen and Peczek, Anna and Kroh, Aleksandra and Jose, Josmy and Reiter, Sebastian and Fischer, Inga Anita and Wenger, Christian and Mai, Andreas}, title = {Integration Aspects of Plasmonic TiN-based Nano-Hole-Arrays on Ge Photodetectorsin a 200mm Wafer CMOS Compatible Silicon Technology}, series = {ECS Transactions}, volume = {109}, journal = {ECS Transactions}, number = {4}, issn = {1938-5862}, doi = {10.1149/10904.0035ecst}, pages = {35 -- 46}, abstract = {In this work we present the progress in regard to the integration of a surface plasmon resonance refractive index sensor into a CMOS compatible 200 mm wafer silicon-based technology. Our approach pursues the combination of germanium photodetectors with metallic nanohole arrays. The paper is focused on the technology development to fabricate large area photodetectors based on a modern design concept. In a first iteration we achieved a leakage current density of 82 mA/cm2 at reverse bias of 0.5 V and a maximum optical responsivity of 0.103 A/W measured with TE polarized light at λ = 1310 nm and a reversed bias of 1 V. For the realization of nanohole arrays we used thin Titanium nitride (TiN) layers deposited by a sputtering process. We were able to produce very homogenous TiN layers with a thickness deviation of around 10 \% and RMS of 1.413 nm for 150 nm thick TiN layers.}, language = {en} } @misc{StrobelAlvaradoChavarinRichteretal., author = {Strobel, Carsten and Alvarado Chavarin, Carlos and Richter, Karola and Knaut, Martin and Reif, Johanna and Völkel, Sandra and Jahn, Andreas and Albert, Matthias and Wenger, Christian and Kirchner, Robert and Bartha, Johann Wolfgang and Mikolajick, Thomas}, title = {Novel Graphene Adjustable-Barrier Transistor with Ultra-High Current Gain}, series = {ACS Applied Materials \& Interfaces}, volume = {14}, journal = {ACS Applied Materials \& Interfaces}, number = {34}, issn = {1944-8244}, doi = {10.1021/acsami.2c10634}, pages = {39249 -- 39254}, abstract = {A graphene-based three terminal barristor device was proposed to overcome the low on/off ratios and insufficient current saturation of conventional graphene field effect transistors. In this study, we fabricated and analyzed a novel graphene-based transistor, which resembles the structure of the barristor but uses a different operating condition. This new device, termed graphene adjustable-barriers transistor (GABT), utilizes a semiconductor-based gate rather than a metal-insulator gate structure to modulate the device currents. The key feature of the device is the two graphene-semiconductor Schottky barriers with different heights that are controlled simultaneously by the gate voltage. Due to the asymmetry of the barriers, the drain current exceeds the gate current by several orders of magnitude. Thus, the GABT can be considered an amplifier with an alterable current gain. In this work, a silicon-graphene-germanium GABT with an ultra-high current gain (ID/IG up to 8 × 106) was fabricated, and the device functionality was demonstrated. Additionally, a capacitance model is applied to predict the theoretical device performance resulting in an on-off ratio above 106, a swing of 87 mV/dec, and a drivecurrent of about 1 × 106 A/cm2.}, language = {en} } @misc{ZoellnerDabrowskiZaumseiletal., author = {Z{\"o}llner, Marvin Hartwig and Dabrowski, Jarek Marek and Zaumseil, Peter and Giussani, A. and Schubert, Markus Andreas and Lupina, Grzegorz and Wilkens, Henrik and Wollschl{\"a}ger, Joachim and B{\"a}umer, Marcus and Reichling, M. and Schr{\"o}der, Thomas}, title = {On the unusual stacking behavior of twin-free, type B oriented CeO2(111) films on hexagonal Pr2O3(0001) / Si(111) systems}, series = {Physical Review}, volume = {85}, journal = {Physical Review}, number = {3}, issn = {1098-0121}, doi = {10.1103/PhysRevB.85.035302}, pages = {035302 -- 035311}, language = {en} } @misc{WilkensSpiessZoellneretal., author = {Wilkens, Henrik and Spieß, Wanja and Z{\"o}llner, Marvin Hartwig and Niu, Gang and Schroeder, Thomas and Wollschl{\"a}ger, Joachim}, title = {Post deposition annealing of epitaxial Ce1-xPrxO2-δ films grown on Si(111)}, series = {Physical Chemistry Chemical Physics}, volume = {17}, journal = {Physical Chemistry Chemical Physics}, issn = {1463-9084}, doi = {10.1039/C6CP01553K}, pages = {9991 -- 9996}, language = {en} } @misc{NiuZoellnerSchroederetal., author = {Niu, Gang and Z{\"o}llner, Marvin Hartwig and Schr{\"o}der, Thomas and Sch{\"a}fer, Andreas and Jhang, Jin-Hao and Zielasek, Volkmar and B{\"a}umer, Marcus and Wilkens, Henrik and Wollschl{\"a}ger, Joachim and Olbrich, Reinhard and Lammers, Christian and Reichling, Michael}, title = {Controlling the physics and chemistry of binary and ternary praseodymium and cerium oxide systems}, series = {Physical Chemistry Chemical Physics}, volume = {17}, journal = {Physical Chemistry Chemical Physics}, number = {38}, issn = {1463-9084}, doi = {10.1039/C5CP02283E}, pages = {24513 -- 24540}, language = {en} } @misc{NiuZoellnerZaumseiletal., author = {Niu, Gang and Z{\"o}llner, Marvin Hartwig and Zaumseil, Peter and Pouliopoulos, A. and d'Acapito, F. and Schr{\"o}der, Thomas and Boscherini, F.}, title = {X-ray diffraction and extended X-ray absorption fine structure study of epitaxial mixed ternary bixbyite PrxY2-xO3 (x=0-2) films on Si (111)}, series = {Journal of Applied Physics}, volume = {113}, journal = {Journal of Applied Physics}, number = {4}, issn = {0021-8979}, pages = {043504 -- 043506}, language = {en} } @misc{OlbrichWilkensOelkeetal., author = {Olbrich, R. and Wilkens, Henrik and Oelke, R. and Wollschl{\"a}ger, Joachim and Z{\"o}llner, Marvin Hartwig and Schroeder, Thomas and Reichling, M.}, title = {A well-structured metastable ceria surface}, series = {Applied Physics Letters}, volume = {104}, journal = {Applied Physics Letters}, number = {8}, doi = {10.1063/1.4866667}, pages = {081910-1 -- 081910-4}, language = {en} } @misc{KuschelDieckWilkensetal., author = {Kuschel, Olga and Dieck, Florian and Wilkens, Henrik and Gevers, Sebastian and Rodewald, Jari and Otte, Christian and Z{\"o}llner, Marvin Hartwig and Niu, Gang and Schr{\"o}der, Thomas and Wollschl{\"a}ger, Joachim}, title = {Plasma Enhanced Complete Oxidtation of Ultrathin Epitaxial Praseodymia Films on Si(111)}, series = {Materials}, volume = {8}, journal = {Materials}, number = {9}, issn = {1996-1944}, doi = {10.3390/ma8095312}, pages = {6379 -- 6390}, language = {en} } @misc{WilkensSchuckmannOelkeetal., author = {Wilkens, Henrik and Schuckmann, O. and Oelke, R. and Gevers, Sebastian and Reichling, M. and Schaefer, A. and B{\"a}umer, Marcus and Z{\"o}llner, Marvin Hartwig and Niu, Gang and Schroeder, Thomas and Wollschl{\"a}ger, Joachim}, title = {Structural transitions of epitaxial ceria films on Si(111)}, series = {Physical Chemistry Chemical Physics}, volume = {15}, journal = {Physical Chemistry Chemical Physics}, number = {42}, issn = {1463-9084}, pages = {18589 -- 18599}, language = {en} } @misc{NiuZaumseilSchubertetal., author = {Niu, Gang and Zaumseil, Peter and Schubert, Markus Andreas and Z{\"o}llner, Marvin Hartwig and Dabrowski, Jarek Marek and Schroeder, Thomas}, title = {Lattice-matched single crystalline ternary PrxY2-xO3 films on SrO-passivated Si (001): interface engineering and crystallography tailoring}, series = {Applied Physics Letters}, volume = {102}, journal = {Applied Physics Letters}, pages = {011906-1 -- 011906-5}, language = {en} } @misc{WilkensRodewaldGeversetal., author = {Wilkens, Henrik and Rodewald, Jari and Gevers, Sebastian and Z{\"o}llner, Marvin Hartwig and Schroeder, Thomas and Wollschl{\"a}ger, Joachim}, title = {Surface morphology of ultra-thin hex-Pr2O3 films on Si(111)}, series = {Journal of Physics : D, Applied Physics}, volume = {46}, journal = {Journal of Physics : D, Applied Physics}, number = {28}, issn = {0022-3727}, pages = {285306 -- 285313}, language = {en} } @misc{ChahineZoellnerRichardetal., author = {Chahine, Gilbert A. and Z{\"o}llner, Marvin Hartwig and Richard, Marie-Ingrid and Subhajit, G. and Zaumseil, Peter and Capellini, Giovanni and Schroeder, Thomas and Sch{\"u}lli, Tobias U.}, title = {Strain and Lattice Orientation Distribution in SiN/Ge CMOS Compatible Light Emitters Microstructures by Quick X-ray Nano-diffraction Microscopy}, series = {Applied Physics Letters}, volume = {106}, journal = {Applied Physics Letters}, issn = {1077-3118}, doi = {10.1063/1.4909529}, pages = {071902-1 -- 071902-4}, language = {en} } @misc{ZoellnerZaumseilWilkensetal., author = {Z{\"o}llner, Marvin Hartwig and Zaumseil, Peter and Wilkens, Henrik and Gevers, Sebastian and Wollschl{\"a}ger, Joachim and B{\"a}umer, Marcus and Xie, Ya-Hong and Niu, Gang and Schroeder, Thomas}, title = {Stoichiometry-structure correlation of epitaxial Ce1-xPrxO2-δ (x = 0-1) thin films on Si(111)}, series = {Journal of Crystal Growth}, volume = {355}, journal = {Journal of Crystal Growth}, number = {1}, issn = {0022-0248}, pages = {159 -- 165}, language = {en} } @misc{ZaumseilYamamotoSchubertetal., author = {Zaumseil, Peter and Yamamoto, Yuji and Schubert, M. and Capellini, Giovanni and Skibitzki, Oliver and Z{\"o}llner, Marvin Hartwig and Schroeder, Thomas}, title = {Tailoring the strain in Si nano-structures for defect-free epitaxial Ge overgrowth}, series = {Nanotechnology}, volume = {26}, journal = {Nanotechnology}, number = {35}, issn = {1361-6528}, doi = {10.1088/0957-4484/26/35/355707}, pages = {355707}, language = {en} } @misc{WilkensSchuckmannOelkeetal., author = {Wilkens, Henrik and Schuckmann, O. and Oelke, R. and Gevers, Sebastian and Schaefer, A. and B{\"a}umer, Marcus and Z{\"o}llner, Marvin Hartwig and Schroeder, Thomas and Wollschl{\"a}ger, Joachim}, title = {Stabilization of the ceria Jota-phase Ce7O12 surface on Si(111)}, series = {Applied Physics Letters}, volume = {102}, journal = {Applied Physics Letters}, number = {11}, issn = {0003-6951}, pages = {111602-1 -- 111602-3}, language = {en} } @misc{ZoellnerNiuJhangetal., author = {Z{\"o}llner, Marvin Hartwig and Niu, Gang and Jhang, Jin-Hao and Sch{\"a}fer, Andreas and Zaumseil, Peter and B{\"a}umer, Marcus and Schr{\"o}der, Thomas}, title = {Temperature dependent reduction of epitaxial Ce1-xPrxO2-δ (x = 0-1) thin films on Si(111): A combined TPD, XRD, XPS and Raman study}, series = {Journal of Physical Chemistry : C}, volume = {117}, journal = {Journal of Physical Chemistry : C}, number = {47}, issn = {1932-7455}, doi = {10.1021/jp4082867}, pages = {24851 -- 24857}, language = {en} } @misc{ZaumseilYamamotoBaueretal., author = {Zaumseil, Peter and Yamamoto, Yuji and Bauer, Joachim and Schubert, Markus Andreas and Matejova, Jana and Kozłowski, Grzegorz and Schr{\"o}der, Thomas and Tillack, Bernd}, title = {Preparation and Characterization of Ge Epitaxially Grown on Nano-structured Periodic Si Pillars and Bars on Si(001) Substrate}, series = {Thin Solid Films}, volume = {520}, journal = {Thin Solid Films}, number = {8}, issn = {0040-6090}, doi = {10.1016/j.tsf.2011.10.178}, pages = {3240 -- 3244}, language = {en} } @misc{KozłowskiZaumseilSchubertetal., author = {Kozłowski, Grzegorz and Zaumseil, Peter and Schubert, Markus Andreas and Yamamoto, Yuji and Sch{\"u}lli, Tobias U. and Tillack, Bernd and Schroeder, Thomas}, title = {Growth and relaxation processes in Ge nanocrystals on free-standing Si(001) nanopillars}, series = {Nanotechnology}, volume = {23}, journal = {Nanotechnology}, number = {11}, issn = {0957-4484}, doi = {10.1088/0957-4484/23/11/115704}, pages = {115704 -- 115711}, language = {en} } @misc{GrossiWalczykZambellietal., author = {Grossi, Alessandro and Walczyk, Damian and Zambelli, Cristian and Miranda, Enrique and Olivo, Piero and Stikanov, V. and Feriani, A. and Sune, J. and Schoof, Gunther and Kraemer, Rolf and Tillack, Bernd and Fox, A. and Schroeder, Thomas and Walczyk, Christian}, title = {Impact of Intercell and Intracell Variability on Forming and Switching Parameters in RRAM Arrays}, series = {IEEE Transaction on Electronic Devices}, volume = {62}, journal = {IEEE Transaction on Electronic Devices}, number = {8}, issn = {0018-9383}, doi = {10.1109/TED.2015.2442412}, pages = {2502 -- 2509}, language = {en} } @misc{FritscherKnoedtelMallahetal., author = {Fritscher, Markus and Kn{\"o}dtel, Johannes and Mallah, Maen and Pechmann, Stefan and Perez-Bosch Quesada, Emilio and Rizzi, Tommaso and Wenger, Christian and Reichenbach, Marc}, title = {Mitigating the Effects of RRAM Process Variation on the Accuracy of Artifical Neural Networks}, series = {Embedded Computer Systems: Architectures, Modeling, and Simulation. SAMOS 2021. Lecture Notes in Computer Science}, journal = {Embedded Computer Systems: Architectures, Modeling, and Simulation. SAMOS 2021. Lecture Notes in Computer Science}, publisher = {Springer}, isbn = {978-3-031-04579-0}, issn = {0302-9743}, doi = {10.1007/978-3-031-04580-6_27}, pages = {401 -- 417}, abstract = {Weight storage is a key challenge in the efficient implementation of artificial neural networks. Novel memory technologies such as RRAM are able to greatly improve density and introduce non-volatility and multibit capabilities to this component of ANN accelerators. The usage of RRAM in this domain comes with downsides, mainly caused by cycle-to-cycle and device-to-device variability leading to erroneous readouts, greatly affecting digital systems. ANNs have the ability to compensate for this by their inherent redundancy and usually exhibit a gradual deterioration in the accuracy of the task at hand. This means, that slight error rates can be acceptable for weight storage in an ANN accelerator. In this work we link device-to-device variability to the accuracy of an ANN for such an accelerator. From this study, we can estimate how strongly a certain net is affected by a certain device parameter variability. This methodology is then used to present three mitigation strategies and to evaluate how they affect the reaction of the network to variability: a) Dropout Layers b) Fault-Aware Training c) Redundancy. These mitigations are then evaluated by their ability to improve accuracy and to lower hardware overhead by providing data for a real-word example. We improved this network's resilience in such a way that it could tolerate double the variation in one of the device parameters (standard deviation of the oxide thickness can be 0.4 nm instead of 0.2 nm while maintaining sufficient accuracy.)}, language = {en} } @misc{SanaTetznerDabrowskietal., author = {Sana, Prabha and Tetzner, Henriette and Dabrowski, Jarek Marek and Tarnawska, Lidia Lupina and Costina, Ioan and Thapa, Sarad and Storck, Peter and Schr{\"o}der, Thomas and Z{\"o}llner, Marvin Hartwig}, title = {Growth of ScN(111) on Sc₂O₃ (111) for GaN integration on Si(111): Experiment and ab initio calculations}, series = {Journal of Applied Physics}, volume = {120}, journal = {Journal of Applied Physics}, issn = {1089-7550}, doi = {10.1063/1.4963826}, pages = {135103}, language = {en} } @misc{CapelliniKozłowskiYamamotoetal., author = {Capellini, Giovanni and Kozłowski, Grzegorz and Yamamoto, Yuji and Lisker, Marco and Tillack, Bernd and Ghrib, A. and Kersauson, M. de and El Kurdi, M. and Boucaud, P. and Schroeder, Thomas}, title = {Tensile strained Ge layers obtained via Si-CMOS compatible approach}, series = {Journal of Applied Physics}, volume = {113}, journal = {Journal of Applied Physics}, number = {1}, pages = {013513-1 -- 013513-6}, language = {en} } @misc{ZaumseilKozłowskiSchubertetal., author = {Zaumseil, Peter and Kozłowski, Grzegorz and Schubert, Markus Andreas and Yamamoto, Yuji and Bauer, J. and Sch{\"u}lli, Tobias U. and Tillack, Bernd and Schroeder, Thomas}, title = {The role of SiGe buffer in growth and relaxation of Ge on free-standing Si(001) nanopillars}, series = {Nanotechnology}, volume = {23}, journal = {Nanotechnology}, number = {35}, issn = {1361-6528}, pages = {355706}, language = {en} } @misc{BauerYamamotoZaumseiletal., author = {Bauer, J. and Yamamoto, Yuji and Zaumseil, Peter and Fursenko, Oksana and Schulz, K. and Kozłowski, Grzegorz and Schubert, Markus Andreas and Schroeder, Thomas and Tillack, Bernd}, title = {Nanostructured Silicon for Ge Nanoheteroepitaxy}, series = {Microelectronics Engineering}, volume = {97}, journal = {Microelectronics Engineering}, issn = {0167-9317}, pages = {169 -- 172}, language = {en} } @misc{PieperDerksZoellneretal., author = {Pieper, H. H. and Derks, C. and Z{\"o}llner, Marvin Hartwig and Olbrich, R. and Troeger, L. and Schroeder, Thomas and Neumann, M. and Reichling, M.}, title = {Morphology and nanostructure of CeO2(111) surfaces of single crystals and of Si(111) supported ceria films,}, series = {Physical Chemistry Chemical Physics}, volume = {14}, journal = {Physical Chemistry Chemical Physics}, number = {44}, issn = {1463-9084}, doi = {10.1039/C2CP42733H}, pages = {15361 -- 15368}, language = {en} } @misc{PechmannMaiVoelkeletal., author = {Pechmann, Stefan and Mai, Timo and V{\"o}lkel, Matthias and Mahadevaiah, Mamathamba Kalishettyhalli and Perez, Eduardo and Perez-Bosch Quesada, Emilio and Reichenbach, Marc and Wenger, Christian and Hagelauer, Amelie}, title = {A Versatile, Voltage-Pulse Based Read and Programming Circuit for Multi-Level RRAM Cells}, series = {Electronics}, volume = {10}, journal = {Electronics}, number = {5}, issn = {2079-9292}, doi = {10.3390/electronics10050530}, pages = {17}, abstract = {In this work, we present an integrated read and programming circuit for Resistive Random Access Memory (RRAM) cells. Since there are a lot of different RRAM technologies in research and the process variations of this new memory technology often spread over a wide range of electrical properties, the proposed circuit focuses on versatility in order to be adaptable to different cell properties. The circuit is suitable for both read and programming operations based on voltage pulses of flexible length and height. The implemented read method is based on evaluating the voltage drop over a measurement resistor and can distinguish up to eight different states, which are coded in binary, thereby realizing a digitization of the analog memory value. The circuit was fabricated in the 130 nm CMOS process line of IHP. The simulations were done using a physics-based, multi-level RRAM model. The measurement results prove the functionality of the read circuit and the programming system and demonstrate that the read system can distinguish up to eight different states with an overall resistance ratio of 7.9.}, language = {en} } @misc{SkibitzkiHatamiYamamotoetal., author = {Skibitzki, Oliver and Hatami, Fariba and Yamamoto, Yuji and Zaumseil, Peter and Trampert, A. and Schubert, Markus Andreas and Tillack, Bernd and Schroeder, Thomas}, title = {GaP collector development for SiGe HBT performance increase: A heterostructure growth study}, series = {Journal of Applied Physics}, volume = {111}, journal = {Journal of Applied Physics}, number = {7}, issn = {0021-8979}, doi = {10.1063/1.3701583}, pages = {073515 -- 073515-9}, language = {en} } @misc{ZaumseilKozłowskiYamamotoetal., author = {Zaumseil, Peter and Kozłowski, Grzegorz and Yamamoto, Yuji and Bauer, J. and Schubert, Markus Andreas and Sch{\"u}lli, Tobias U. and Tillack, Bernd and Schroeder, Thomas}, title = {Compliant Si nanostructures on SOI for Ge nanoheteroepitaxy - a case study for lattice mismatched semiconductor integration on Si(001)}, series = {Journal of Applied Physics}, volume = {112}, journal = {Journal of Applied Physics}, number = {4}, issn = {0021-8979}, pages = {043506 -- 043511}, language = {en} } @misc{RichardZoellnerChahineetal., author = {Richard, Marie-Ingrid and Z{\"o}llner, Marvin Hartwig and Chahine, Gilbert A. and Zaumseil, Peter and Capellini, Giovanni and H{\"a}berlen, Maik and Storck, Peter and Sch{\"u}lli, Tobias U. and Schr{\"o}der, Thomas}, title = {Structural Mapping of Functional Ge Layers Grown on Graded SiGe Buffers for sub-10 nm CMOS Applications Using Advanced X-ray Nano-Diffraction}, series = {ACS Applied Materials and Interfaces}, volume = {7}, journal = {ACS Applied Materials and Interfaces}, number = {48}, issn = {1944-8244}, doi = {10.1021/acsami.5b08645}, pages = {26696 -- 26700}, language = {en} } @misc{ReiserReichenbachRizzietal., author = {Reiser, Daniel and Reichenbach, Marc and Rizzi, Tommaso and Baroni, Andrea and Fritscher, Markus and Wenger, Christian and Zambelli, Cristian and Bertozzi, Davide}, title = {Technology-Aware Drift Resilience Analysis of RRAM Crossbar Array Configurations}, series = {21st IEEE Interregional NEWCAS Conference (NEWCAS), 26-28 June 2023, Edinburgh, United Kingdom}, journal = {21st IEEE Interregional NEWCAS Conference (NEWCAS), 26-28 June 2023, Edinburgh, United Kingdom}, publisher = {IEEE}, address = {Piscataway, NJ}, isbn = {979-8-3503-0024-6}, doi = {10.1109/NEWCAS57931.2023}, abstract = {In-memory computing with resistive-switching random access memory (RRAM) crossbar arrays has the potential to overcome the major bottlenecks faced by digital hardware for data-heavy workloads such as deep learning. However, RRAM devices are subject to several non-idealities that result in significant inference accuracy drops compared with software baseline accuracy. A critical one is related to the drift of the conductance states appearing immediately at the end of program and verify algorithms that are mandatory for accurate multi-level conductance operation. The support of drift models in state-of-the-art simulation tools of memristive computationin-memory is currently only in the early stage, since they overlook key device- and array-level parameters affecting drift resilience such as the programming algorithm of RRAM cells, the choice of target conductance states and the weight-toconductance mapping scheme. The goal of this paper is to fully expose these parameters to RRAM crossbar designers as a multi-dimensional optimization space of drift resilience. For this purpose, a simulation framework is developed, which comes with the suitable abstractions to propagate the effects of those RRAM crossbar configuration parameters to their ultimate implications over inference performance stability.}, language = {en} } @misc{ZoellnerRichardChahineetal., author = {Z{\"o}llner, Marvin Hartwig and Richard, Marie-Ingrid and Chahine, Gilbert A. and Zaumseil, Peter and Reich, Christian and Capellini, Giovanni and Montalenti, Francesco and Marzegalli, Anna and Xie, Ya-Hong and Sch{\"u}lli, Tobias U. and H{\"a}berlen, Maik and Storck, Peter and Schroeder, Thomas}, title = {Imaging structure and composition homogeneity of 300 mm SiGe virtual substrates for advanced CMOS applications by scanning X-ray diffraction microscopy}, series = {ACS Applied Materials and Interfaces}, volume = {7}, journal = {ACS Applied Materials and Interfaces}, number = {17}, issn = {1944-8252}, doi = {10.1021/am508968b}, pages = {9031 -- 9037}, language = {en} } @misc{TarnawskaZoellnerNiermannetal., author = {Tarnawska, Lidia Lupina and Z{\"o}llner, Marvin Hartwig and Niermann, T. and Dietrich, Burkhart and Capellini, Giovanni and Thapa, Sarad and H{\"a}berlen, Maik and Lehmann, M. and Storck, Peter and Schr{\"o}der, Thomas}, title = {Zero Lattice Mismatch and Truly Single Crystalline ScN Buffer Layers for GaN Growth on Silicon}, series = {Applied Physics Letters}, volume = {107}, journal = {Applied Physics Letters}, number = {20}, issn = {1077-3118}, doi = {10.1063/1.4935856}, pages = {201907}, language = {en} }