@misc{TaokaCapelliniDrieschetal., author = {Taoka, Noriyuki and Capellini, Giovanni and Driesch, Nils von den and Buca, Dan and Zaumseil, Peter and Schubert, Markus Andreas and Klesse, Wolfgang Matthias and Montanari, Michele and Schr{\"o}der, Thomas}, title = {Sn Migration Control at High Temperature Due to High Deposition Speed for Forming High Quality GeSn Layer}, series = {Applied Physics Express}, volume = {9}, journal = {Applied Physics Express}, number = {3}, issn = {1882-0786}, doi = {10.7567/APEX.9.031201}, pages = {031201}, language = {en} } @misc{NiuCapelliniSchubertetal., author = {Niu, Gang and Capellini, Giovanni and Schubert, Markus Andreas and Niermann, Tore and Zaumseil, Peter and Katzer, Jens and Krause, Hans-Michael and Skibitzki, Oliver and Lehmann, Michael and Xie, Ya-Hong and K{\"a}nel, Hans von and Schr{\"o}der, Thomas}, title = {Dislocation-free Ge nano-crystals via pattern dependent selective Ge heteroepitaxy on Si nano-tip wafers}, series = {Scientific Reports}, volume = {6}, journal = {Scientific Reports}, issn = {2045-2322}, doi = {10.1038/srep22709}, pages = {22709}, language = {en} } @misc{NiuCalkaWalczyketal., author = {Niu, Gang and Calka, Pauline and Walczyk, Christian and Guha, Subhajit and Fraschke, Mirko and Fr{\"o}hlich, K. and Hamoumou, Philippe and Gautier, Brice and Alff, Lambert and Schr{\"o}der, Thomas}, title = {Geometric conductive filament confinement by nanotips for resistive switching of HfO₂-RAM devices with high performance}, series = {Scientific Reports}, volume = {6}, journal = {Scientific Reports}, number = {25757}, issn = {2045-2322}, language = {en} } @misc{EwertSchmidtFlegeetal., author = {Ewert, Moritz and Schmidt, Thomas and Flege, Jan Ingo and Heidmann, Inga and Grzela, Tomasz and Klesse, Wolfgang Matthias and F{\"o}rster, M. and Aballe, Lucia and Schr{\"o}der, Thomas}, title = {Morphology and Chemical Composition of Co Germanide islands on Ge(001): in-situ nanoscale insights into contact formation for Ge-based device technology}, series = {Nanotechnology}, volume = {27}, journal = {Nanotechnology}, number = {32}, issn = {1361-6528}, pages = {325705}, language = {en} } @misc{YangMazetOkatanetal., author = {Yang, Sang Mo and Mazet, Lucie and Okatan, M. Baris and Jesse, Stephen and Niu, Gang and Schroeder, Thomas and Schamm-Chardon, Sylvie and Dubourdieu, Catherine and Baddorf, Arthur P. and Kalinin, Sergei V.}, title = {Decoupling indirect topographic cross-talk in band excitation piezoresponse force microscopy imaging and spectroscopy}, series = {Applied Physics Letters}, volume = {108}, journal = {Applied Physics Letters}, number = {25}, issn = {1077-3118}, doi = {10.1063/1.4954276}, pages = {252902}, language = {en} } @misc{EngelhardKlempBehringeretal., author = {Engelhard, M. and Klemp, C. and Behringer, M. and Rudolph, A. and Skibitzki, Oliver and Zaumseil, Peter and Schr{\"o}der, Thomas}, title = {Characterization of reclaimed GaAs substrates and investigation of reuse for thin film InGaAlP LED epitaxial growth}, series = {Journal of Applied Physics}, volume = {120}, journal = {Journal of Applied Physics}, number = {4}, issn = {1089-7550}, doi = {10.1063/1.4955333}, pages = {045301}, language = {en} } @misc{DabrowskiLippertAvilaetal., author = {Dabrowski, Jarek Marek and Lippert, Gunther and Avila, J. and Baringhaus, Jens and Colambo, I. and Dedkov, Yu. S. and Herziger, Felix and Lupina, Grzegorz and Maultzsch, J. and Schaffus, T. and Schr{\"o}der, Thomas and Sowinska, Małgorzata and Tegenkamp, Christoph and Vignaud, D. and Asensio, Maria Carmen}, title = {Understanding the growth mechanism of graphene on Ge/Si(001) surfaces}, series = {Scientific Reports}, journal = {Scientific Reports}, number = {6}, issn = {2045-2322}, doi = {10.1038/srep31639}, pages = {Art. 31639}, language = {en} } @misc{NiuCapelliniHatamietal., author = {Niu, Gang and Capellini, Giovanni and Hatami, Fariba and Bartolomeo, Antonio di and Niermann, Tore and Hameed, Hussein Emad and Schubert, Markus Andreas and Krause, Hans-Michael and Zaumseil, Peter and Skibitzki, Oliver and Masselink, William T. and Lehmann, Michael and Xie, Ya-Hong and Schr{\"o}der, Thomas}, title = {Selective Epitaxy of InP on Si and Rectification in Graphene/InP/Si Hybrid Structure}, series = {ACS Applied Materials and Interfaces}, volume = {8}, journal = {ACS Applied Materials and Interfaces}, number = {40}, issn = {1944-8244}, doi = {10.1021/acsami.6b09592}, pages = {26948 -- 26955}, language = {en} } @misc{SharatJosephVogeletal., author = {Sharat, S. U. and Joseph, Merin and Vogel, Stefan and Hildebrandt, E. and Komissinskiy, P. and Kurian, J. and Schr{\"o}der, Thomas and Alff, Lambert}, title = {Impact of Oxygen stoichiometry on electroforming and multiple switching modes in TiN/TaOₓ/Pt based ReRAM}, series = {Applied Physics Letters}, volume = {109}, journal = {Applied Physics Letters}, number = {17}, issn = {1077-3118}, doi = {10.1063/1.4965872}, pages = {173503}, language = {en} } @misc{SkibitzkiCapelliniYamamotoetal., author = {Skibitzki, Oliver and Capellini, Giovanni and Yamamoto, Yuji and Zaumseil, Peter and Schubert, Markus Andreas and Schr{\"o}der, Thomas and Ballabio, Andrea and Bergamaschini, Roberto and Salvalaglio, Marco and Miglio, Leo and Montalenti, Francesco}, title = {RP-CVD growth of isolated Ge crystals and suspended layers on micrometric Si pillars}, series = {ACS Applied Materials and Interfaces}, volume = {8}, journal = {ACS Applied Materials and Interfaces}, number = {39}, issn = {1944-8244}, doi = {10.1021/acsami.6b07694}, pages = {26374 -- 26380}, language = {en} }