@misc{BertaudWalczykWalczyketal., author = {Bertaud, Thomas and Walczyk, Damian and Walczyk, Christian and Kubotsch, S. and Wenger, Christian and Schr{\"o}der, Thomas and Vall{\´e}e, Christophe and Gonon, P. and Mannequin, C. and Jousseaume, V. and Grampeix, Helen}, title = {Resistive Switching of HfO2-based MIM diodes: Impact of the Top Electrode Materials}, series = {Thin Solid Films}, volume = {520}, journal = {Thin Solid Films}, number = {14}, issn = {0040-6090}, pages = {4551 -- 4555}, language = {en} } @misc{CapelliniDeSetaZaumseiletal., author = {Capellini, Giovanni and De Seta, Monica and Zaumseil, Peter and Kozłowski, Grzegorz and Schroeder, Thomas}, title = {High temperature x-ray diffraction measurements on Ge/Si(001) heterostructures: a study on the residual tensile strain}, series = {Journal of Applied Physics}, volume = {111}, journal = {Journal of Applied Physics}, number = {7}, issn = {0021-8979}, doi = {10.1063/1.3702443}, language = {en} } @misc{ZhangSunLietal., author = {Zhang, Wei and Sun, Ke and Li, Biyun and Lee, Jae Young and Xie, Ya-Hong and Katzer, Jens and Schroeder, Thomas and Wei, Xinyu and Russell, Thomas P.}, title = {Field Emission Tip Array Fabrication Utilizing Geometrical Hindrance in the Oxidation of Si}, series = {IEEE Transactions on Nanotechnology}, volume = {11}, journal = {IEEE Transactions on Nanotechnology}, number = {5}, issn = {1536-125X}, doi = {10.1109/TNANO.2012.2208472}, pages = {999 -- 1003}, language = {en} } @misc{TarnawskaZaumseilSchubertetal., author = {Tarnawska, Lidia Lupina and Zaumseil, Peter and Schubert, Markus Andreas and Okur, S. and Morkoc, H. and Paszkiewicz, R. and Storck, Peter and Schroeder, Thomas}, title = {Structural and optical quality of GaN on Sc2O3 / Y2O3 / Si(111)}, series = {Journal of Applied Physics}, volume = {111}, journal = {Journal of Applied Physics}, number = {7}, issn = {0021-8979}, doi = {10.1063/1.3699201}, pages = {073509 -- 073509-4}, language = {en} } @misc{WangZhangLiangetal., author = {Wang, Pu and Zhang, Wei and Liang, Owen and Pantoja, Marcos and Katzer, Jens and Schroeder, Thomas and Xie, Ya-Hong}, title = {Giant enhancement and anomalous behavior of Graphene Raman spectra on plasmonic nanostructures}, series = {ACS Nano}, volume = {6}, journal = {ACS Nano}, number = {7}, issn = {1936-086X}, pages = {6244 -- 6249}, language = {en} } @misc{BertaudSowinskaWalczyketal., author = {Bertaud, Thomas and Sowinska, Małgorzata and Walczyk, Damian and Thiess, Sebastian and Walczyk, Christian and Gloskovski, A. and Drube, W. and Schroeder, Thomas}, title = {In-operando and non-destructive analysis of the resistive switching in the Ti/HfO2/TiN-based system by Hard X-ray Photoelectron Spectroscopy}, series = {Applied Physics Letters}, volume = {112}, journal = {Applied Physics Letters}, number = {4}, pages = {043506 -- 043511}, language = {en} } @misc{KozłowskiFursenkoZaumseiletal., author = {Kozłowski, Grzegorz and Fursenko, Oksana and Zaumseil, Peter and Schroeder, Thomas and Vorderwestner, M. and Storck, Peter}, title = {The epitaxial growth of low defect SiGe buffer layers for integration of new materials on 300 mm silicon wafers}, series = {ECS transactions}, volume = {50}, journal = {ECS transactions}, number = {9}, issn = {1938-6737}, pages = {613 -- 621}, language = {en} } @misc{BertaudWalczykSowinskaetal., author = {Bertaud, Thomas and Walczyk, Damian and Sowinska, Małgorzata and Wolansky, Dirk and Tillack, Bernd and Schoof, Gunther and Korolevych, R. and Wenger, Christian and Thiess, Sebastian and Schroeder, Thomas and Walczyk, Christian}, title = {HfO2-based RRAM for Embedded Nonvolatile Memory: From Materials Science to Integrated 1T1R RRAM Arrays}, series = {ECS transactions}, volume = {50}, journal = {ECS transactions}, number = {4}, issn = {1938-6737}, pages = {21 -- 26}, language = {en} } @misc{SowinskaBertaudWalczyketal., author = {Sowinska, Małgorzata and Bertaud, Thomas and Walczyk, Damian and Thiess, Sebastian and Schubert, Markus Andreas and Lukosius, Mindaugas and Drube, W. and Walczyk, Christian and Schr{\"o}der, Thomas}, title = {Hard X-ray Photoelectron Spectroscopy study of the electroforming in Ti/HfO2-based resistive switching structures}, series = {Applied Physics Letters}, volume = {100}, journal = {Applied Physics Letters}, number = {23}, issn = {0003-6951}, pages = {233509 -- 233514}, language = {en} } @misc{BartolomeoSantandreaGiubileoetal., author = {Bartolomeo, Antonio di and Santandrea, S. and Giubileo, Filippo and Romeo, Francesco and Petrosino, Mario and Citro, R. and Barbara, P. and Lupina, Grzegorz and Schr{\"o}der, Thomas and Rubino, Alfredo}, title = {Effect of back-gate on contact resistance and on channel conductance in graphene-based field-effect transistors}, series = {Diamond and Related Materials}, volume = {38}, journal = {Diamond and Related Materials}, number = {13}, issn = {0925-9635}, pages = {19 -- 23}, language = {en} } @misc{FroehlichJančovičHudeketal., author = {Froehlich, K. and Jančovič, P. and Hudek, B. and D{\´e}rer, J. and Paskaleva, A. and Bertaud, Thomas and Schroeder, Thomas}, title = {Atomic layer deposition of thin oxide films for resistive switching}, series = {Electrochemical Society (ECS) Transactions}, volume = {58}, journal = {Electrochemical Society (ECS) Transactions}, number = {10}, issn = {1938-6737}, doi = {10.1149/05810.0163ecst}, pages = {163 -- 170}, language = {en} } @misc{VirgilioManganelliGrossoetal., author = {Virgilio, Michele and Manganelli, Constanza Lucia and Grosso, G. and Schroeder, Thomas and Capellini, Giovanni}, title = {Photoluminescence, recombination rate, and gain spectra in optically excited n-type and tensile strained germanium layers}, series = {Journal of Applied Physics}, volume = {114}, journal = {Journal of Applied Physics}, number = {24}, issn = {0021-8979}, pages = {243102 -- 243102-11}, language = {en} } @misc{WangLiangZhangetal., author = {Wang, P. and Liang, O. and Zhang, Wei and Schroeder, Thomas and Xie, Y. H.}, title = {Ultra-Sensitive Graphene-Plasmonic Hybrid Platform for Label-Free Detection}, series = {Advanced Materials}, volume = {25}, journal = {Advanced Materials}, number = {35}, issn = {1521-4095}, pages = {4918 -- 4924}, language = {en} } @misc{ZaumseilKozłowskiYamamotoetal., author = {Zaumseil, Peter and Kozłowski, Grzegorz and Yamamoto, Yuji and Schubert, Markus Andreas and Schroeder, Thomas}, title = {X-ray Characterization of Ge Dots Epitaxially Grown on Nano-structured Si Islands on SOI Substrates}, series = {Journal of Applied Crystallography}, volume = {46}, journal = {Journal of Applied Crystallography}, number = {4}, issn = {0021-8898}, pages = {868 -- 873}, language = {en} } @misc{TarnawskaDabrowskiGrzelaetal., author = {Tarnawska, Lidia Lupina and Dabrowski, Jarek Marek and Grzela, Tomasz and Niermann, T. and Lehmann, M. and Storck, Peter and Schr{\"o}der, Thomas}, title = {Interface science of virtual GaN substrates on Si(111) via Sc2O3/Y2O3 buffers: Experiment and Theory}, series = {Journal of Applied Physics}, volume = {113}, journal = {Journal of Applied Physics}, number = {21}, issn = {0021-8979}, pages = {213507 -- 213507}, language = {en} } @misc{NiermannZenglerTarnawskaetal., author = {Niermann, T. and Zengler, D. and Tarnawska, Lidia Lupina and Storck, Peter and Schroeder, Thomas}, title = {Virtual GaN substrates via Sc2O3/Y2O3 buffers on Si(111): TEM Characterization of growth defects}, series = {Journal of Applied Physics}, volume = {113}, journal = {Journal of Applied Physics}, number = {22}, issn = {0021-8979}, pages = {223501 -- 223501-8}, language = {en} } @misc{SchaeferWendtMantletal., author = {Sch{\"a}fer, Anna and Wendt, Fabian and Mantl, Siegfried and Hartdegen, Hilde and Mikulics, Martin and Schubert, J{\"u}rgen and Luysberg, Martina and Besmehn, Astrid and Niu, Gang and Schroeder, Thomas}, title = {Hexagonal LaLuO3 as high-k dielectric}, series = {Journal of Vacuum Science and Technology : B}, volume = {33}, journal = {Journal of Vacuum Science and Technology : B}, doi = {10.1116/1.4904401}, pages = {01A104}, language = {en} } @misc{DiGaspareSabbaghDeSetaetal., author = {Di Gaspare, L. and Sabbagh, D. and De Seta, Monica and Sodo, A. and Wirths, S. and Buca, Dan and Zaumseil, Peter and Schroeder, Thomas and Capellini, Giovanni}, title = {A very low temperature epi-cleaning process for Ge / GeSn heterostructures}, series = {Journal of Applied Physics}, volume = {117}, journal = {Journal of Applied Physics}, issn = {1089-7550}, doi = {10.1063/1.4906616}, pages = {045306}, language = {en} } @misc{TaokaAsanoYamahaetal., author = {Taoka, Noriyuki and Asano, Takanori and Yamaha, Takashi and Terashima, Tatsuya and Nakatsuka, Osamu and Costina, Ioan and Zaumseil, Peter and Capellini, Giovanni and Zaima, Shigeaki and Schroeder, Thomas}, title = {Non-uniform depth distributions of Sn concentration induced by Sn migration and desorption during GeSnSi layer formation}, series = {Applied Physics Letters}, volume = {106}, journal = {Applied Physics Letters}, issn = {1077-3118}, doi = {10.1063/1.4908121}, pages = {061107-1 -- 061107-5}, language = {en} } @misc{VirgilioWitzigmannBologninietal., author = {Virgilio, Michele and Witzigmann, Bernd and Bolognini, Gabriele and Guha, Subhajit and Schr{\"o}der, Thomas and Capellini, Giovanni}, title = {CMOS-compatible, modulator concept based on strain-induced refractive-index modulation}, series = {Optics Express}, volume = {23}, journal = {Optics Express}, number = {5}, issn = {1094-4087}, doi = {10.1364/OE.23.005930}, pages = {5930 -- 5940}, language = {en} } @misc{WirthsTroitschMussleretal., author = {Wirths, S. and Troitsch, R. and Mussler, G. and Stoica, T. and Hartmann, J.-M. and Zaumseil, Peter and Schroeder, Thomas and Mantl, Siegfried and Buca, Dan}, title = {Ternary and Quaternary Ni(Si)GeSn Contact Formation for highly strained Ge p- and n-MOSFETs}, series = {Semiconductor Science and Technology}, volume = {30}, journal = {Semiconductor Science and Technology}, number = {5}, issn = {0268-1242}, doi = {10.1088/0268-1242/30/5/055003}, pages = {055003}, language = {en} } @misc{KalettaWipfFraschkeetal., author = {Kaletta, Udo Christian and Wipf, Christian and Fraschke, Mirko and Wolansky, Dirk and Schubert, Markus Andreas and Schroeder, Thomas and Wenger, Christian}, title = {AlN/SiO2/Si3N4/Si(100) based CMOS compatible surface acoustic wave filter with -12.8 dB minimum insertion loss}, series = {IEEE Transactions on Electron Devices}, volume = {62}, journal = {IEEE Transactions on Electron Devices}, number = {3}, issn = {0018-9383}, doi = {10.1109/TED.2015.2395443}, pages = {764 -- 768}, language = {en} } @misc{KoczorowskiGrzelaRadnyetal., author = {Koczorowski, Wojciech and Grzela, Tomasz and Radny, M. W. and Schofield, S. R. and Capellini, Giovanni and Czajka, Ryszard and Schr{\"o}der, Thomas and Curson, Neil J.}, title = {Ba termination of Ge(001) studied with STM}, series = {Nanotechnology}, volume = {26}, journal = {Nanotechnology}, number = {15}, issn = {1361-6528}, doi = {10.1088/0957-4484/26/15/155701}, pages = {155701}, language = {en} } @misc{PeschkaThomasGlitzkyetal., author = {Peschka, Dirk and Thomas, Marc and Glitzky, Annegret and N{\"u}rnberg, Reiner and G{\"a}rtner, Klaus and Virgilio, Michele and Guha, Shekhar and Schr{\"o}der, Thomas and Capellini, Giovanni and Koprucki, Thomas}, title = {Modeling of edge-emitting lasers based on tensile strained Germanium microstripes}, series = {IEEE Photonics Journal}, volume = {7}, journal = {IEEE Photonics Journal}, number = {3}, issn = {1943-0655}, doi = {10.1109/JPHOT.2015.2427093}, language = {en} } @misc{SchaeferRahmanizadehBihlmayeretal., author = {Sch{\"a}fer, Anna and Rahmanizadeh, K. and Bihlmayer, G. and Luysberg, Martina and Wendt, Fabian and Besmehn, Astrid and Fox, A. and Schnee, M. and Niu, Gang and Schroeder, Thomas and Mantl, Siegfried and Hartdegen, Hilde and Mikulics, Martin and Schubert, J{\"u}rgen}, title = {Polymorphous GdScO3 as high permittivity dielectric}, series = {Journal of Alloy and Compunds}, volume = {651}, journal = {Journal of Alloy and Compunds}, issn = {0925-8388}, doi = {10.1016/j.jallcom.2015.08.135}, pages = {514 -- 520}, language = {en} } @misc{SalvalaglioBergamaschiniIsaetal., author = {Salvalaglio, Marco and Bergamaschini, Roberto and Isa, Fabio and Scaccabarozi, Andrea and Isella, Giovanni and Backofen, Rainer and Voigt, Axel and Montalenti, Francesco and Capellini, Giovanni and Marzegalli, Anna and Schroeder, Thomas and K{\"a}nel, Hans von and Miglio, Leo}, title = {Engineering coalescence by annealing of 3D Ge microstructures into high-qualtiy suspended layers on Si}, series = {ACS Applied Materials and Interfaces}, volume = {7}, journal = {ACS Applied Materials and Interfaces}, number = {34}, issn = {1944-8244}, doi = {10.1021/acsami.5b05054}, pages = {19219 -- 19225}, language = {en} } @misc{VirgilioSchroederYamamotoetal., author = {Virgilio, Michele and Schr{\"o}der, Thomas and Yamamoto, Yuji and Capellini, Giovanni}, title = {Radiative and non-radiative recombinations in tensile strained Ge microstrips: Photoluminescence experiments and modeling}, series = {Journal of Applied Physics}, volume = {118}, journal = {Journal of Applied Physics}, number = {23}, issn = {1089-7550}, doi = {10.1063/1.4938026}, pages = {233110}, language = {en} } @misc{NiuCapelliniLupinaetal., author = {Niu, Gang and Capellini, Giovanni and Lupina, Grzegorz and Niermann, Tore and Salvalaglio, Marco and Marzegalli, Anna and Schubert, Markus Andreas and Zaumseil, Peter and Krause, Hans-Michael and Skibitzki, Oliver and Lehmann, Michael and Montalenti, Francesco and Xie, Ya-Hong and Schr{\"o}der, Thomas}, title = {Photodetection in hybrid single layer graphene/fully coherent Ge island nanostructures selectively grown on Si nano-tip patterns}, series = {ACS Applied Materials and Interfaces}, volume = {8}, journal = {ACS Applied Materials and Interfaces}, number = {3}, issn = {1944-8252}, pages = {2017 -- 2026}, language = {en} } @misc{PeschkaThomasGlitzkyetal., author = {Peschka, Dirk and Thomas, Marita and Glitzky, Annegret and N{\"u}rnberg, Reiner and Virgilio, Michele and Guha, Subhajit and Schr{\"o}der, Thomas and Capellini, Giovanni and Koprucki, Thomas}, title = {Robustness analysis of a device concept for edge-emitting lasers based on strained Germanium}, series = {Optical and Quantum Electronics}, volume = {48}, journal = {Optical and Quantum Electronics}, number = {2, Article 156}, issn = {1572-817X}, pages = {7}, language = {en} } @misc{ZaumseilSchubertYamamotoetal., author = {Zaumseil, Peter and Schubert, Markus Andreas and Yamamoto, Yuji and Skibitzki, Oliver and Capellini, Giovanni and Schr{\"o}der, Thomas}, title = {Misfit dislocation-free epitaxial growth of SiGe on compliant nanostructured Silicon}, series = {Solid State Phenomena}, volume = {242}, journal = {Solid State Phenomena}, issn = {1662-9779}, doi = {10.4028/www.scientific.net/SSP.242.402}, pages = {402 -- 407}, language = {en} } @misc{TaokaCapelliniDrieschetal., author = {Taoka, Noriyuki and Capellini, Giovanni and Driesch, Nils von den and Buca, Dan and Zaumseil, Peter and Schubert, Markus Andreas and Klesse, Wolfgang Matthias and Montanari, Michele and Schr{\"o}der, Thomas}, title = {Sn Migration Control at High Temperature Due to High Deposition Speed for Forming High Quality GeSn Layer}, series = {Applied Physics Express}, volume = {9}, journal = {Applied Physics Express}, number = {3}, issn = {1882-0786}, doi = {10.7567/APEX.9.031201}, pages = {031201}, language = {en} } @misc{NiuCapelliniSchubertetal., author = {Niu, Gang and Capellini, Giovanni and Schubert, Markus Andreas and Niermann, Tore and Zaumseil, Peter and Katzer, Jens and Krause, Hans-Michael and Skibitzki, Oliver and Lehmann, Michael and Xie, Ya-Hong and K{\"a}nel, Hans von and Schr{\"o}der, Thomas}, title = {Dislocation-free Ge nano-crystals via pattern dependent selective Ge heteroepitaxy on Si nano-tip wafers}, series = {Scientific Reports}, volume = {6}, journal = {Scientific Reports}, issn = {2045-2322}, doi = {10.1038/srep22709}, pages = {22709}, language = {en} } @misc{NiuCalkaWalczyketal., author = {Niu, Gang and Calka, Pauline and Walczyk, Christian and Guha, Subhajit and Fraschke, Mirko and Fr{\"o}hlich, K. and Hamoumou, Philippe and Gautier, Brice and Alff, Lambert and Schr{\"o}der, Thomas}, title = {Geometric conductive filament confinement by nanotips for resistive switching of HfO₂-RAM devices with high performance}, series = {Scientific Reports}, volume = {6}, journal = {Scientific Reports}, number = {25757}, issn = {2045-2322}, language = {en} } @misc{EwertSchmidtFlegeetal., author = {Ewert, Moritz and Schmidt, Thomas and Flege, Jan Ingo and Heidmann, Inga and Grzela, Tomasz and Klesse, Wolfgang Matthias and F{\"o}rster, M. and Aballe, Lucia and Schr{\"o}der, Thomas}, title = {Morphology and Chemical Composition of Co Germanide islands on Ge(001): in-situ nanoscale insights into contact formation for Ge-based device technology}, series = {Nanotechnology}, volume = {27}, journal = {Nanotechnology}, number = {32}, issn = {1361-6528}, pages = {325705}, language = {en} } @misc{YangMazetOkatanetal., author = {Yang, Sang Mo and Mazet, Lucie and Okatan, M. Baris and Jesse, Stephen and Niu, Gang and Schroeder, Thomas and Schamm-Chardon, Sylvie and Dubourdieu, Catherine and Baddorf, Arthur P. and Kalinin, Sergei V.}, title = {Decoupling indirect topographic cross-talk in band excitation piezoresponse force microscopy imaging and spectroscopy}, series = {Applied Physics Letters}, volume = {108}, journal = {Applied Physics Letters}, number = {25}, issn = {1077-3118}, doi = {10.1063/1.4954276}, pages = {252902}, language = {en} } @misc{EngelhardKlempBehringeretal., author = {Engelhard, M. and Klemp, C. and Behringer, M. and Rudolph, A. and Skibitzki, Oliver and Zaumseil, Peter and Schr{\"o}der, Thomas}, title = {Characterization of reclaimed GaAs substrates and investigation of reuse for thin film InGaAlP LED epitaxial growth}, series = {Journal of Applied Physics}, volume = {120}, journal = {Journal of Applied Physics}, number = {4}, issn = {1089-7550}, doi = {10.1063/1.4955333}, pages = {045301}, language = {en} } @misc{DabrowskiLippertAvilaetal., author = {Dabrowski, Jarek Marek and Lippert, Gunther and Avila, J. and Baringhaus, Jens and Colambo, I. and Dedkov, Yu. S. and Herziger, Felix and Lupina, Grzegorz and Maultzsch, J. and Schaffus, T. and Schr{\"o}der, Thomas and Sowinska, Małgorzata and Tegenkamp, Christoph and Vignaud, D. and Asensio, Maria Carmen}, title = {Understanding the growth mechanism of graphene on Ge/Si(001) surfaces}, series = {Scientific Reports}, journal = {Scientific Reports}, number = {6}, issn = {2045-2322}, doi = {10.1038/srep31639}, pages = {Art. 31639}, language = {en} } @misc{NiuCapelliniHatamietal., author = {Niu, Gang and Capellini, Giovanni and Hatami, Fariba and Bartolomeo, Antonio di and Niermann, Tore and Hameed, Hussein Emad and Schubert, Markus Andreas and Krause, Hans-Michael and Zaumseil, Peter and Skibitzki, Oliver and Masselink, William T. and Lehmann, Michael and Xie, Ya-Hong and Schr{\"o}der, Thomas}, title = {Selective Epitaxy of InP on Si and Rectification in Graphene/InP/Si Hybrid Structure}, series = {ACS Applied Materials and Interfaces}, volume = {8}, journal = {ACS Applied Materials and Interfaces}, number = {40}, issn = {1944-8244}, doi = {10.1021/acsami.6b09592}, pages = {26948 -- 26955}, language = {en} } @misc{SharatJosephVogeletal., author = {Sharat, S. U. and Joseph, Merin and Vogel, Stefan and Hildebrandt, E. and Komissinskiy, P. and Kurian, J. and Schr{\"o}der, Thomas and Alff, Lambert}, title = {Impact of Oxygen stoichiometry on electroforming and multiple switching modes in TiN/TaOₓ/Pt based ReRAM}, series = {Applied Physics Letters}, volume = {109}, journal = {Applied Physics Letters}, number = {17}, issn = {1077-3118}, doi = {10.1063/1.4965872}, pages = {173503}, language = {en} } @misc{SkibitzkiCapelliniYamamotoetal., author = {Skibitzki, Oliver and Capellini, Giovanni and Yamamoto, Yuji and Zaumseil, Peter and Schubert, Markus Andreas and Schr{\"o}der, Thomas and Ballabio, Andrea and Bergamaschini, Roberto and Salvalaglio, Marco and Miglio, Leo and Montalenti, Francesco}, title = {RP-CVD growth of isolated Ge crystals and suspended layers on micrometric Si pillars}, series = {ACS Applied Materials and Interfaces}, volume = {8}, journal = {ACS Applied Materials and Interfaces}, number = {39}, issn = {1944-8244}, doi = {10.1021/acsami.6b07694}, pages = {26374 -- 26380}, language = {en} } @misc{SchlykowKlesseNiuetal., author = {Schlykow, Viktoria and Klesse, Wolfgang Matthias and Niu, Gang and Taoka, Noriyuki and Yamamoto, Yuji and Skibitzki, Oliver and Barget, M. R. and Zaumseil, Peter and K{\"a}nel, Hans von and Schubert, Markus Andreas and Capellini, Giovanni and Schroeder, Thomas}, title = {Selective growth of fully relaxed GeSn nano-islands by nanoheteroepitaxy on patterned Si(001)}, series = {Applied Physics Letters}, volume = {109}, journal = {Applied Physics Letters}, number = {20}, issn = {1077-3118}, doi = {10.1063/1.4967500}, pages = {202102}, language = {en} } @misc{BartolomeoPassacantandoNiuetal., author = {Bartolomeo, Antonio di and Passacantando, Maurizio and Niu, Gang and Schlykow, Viktoria and Lupina, Grzegorz and Giubileo, Filippo and Schr{\"o}der, Thomas}, title = {Observation of field emission from GeSn nanoparticles epitaxially grown on silicon nanotip arrays}, series = {Nanotechnology}, volume = {27}, journal = {Nanotechnology}, number = {48}, issn = {1361-6528}, pages = {485707}, language = {en} } @misc{LukosiusLippertDabrowskietal., author = {Lukosius, Mindaugas and Lippert, Gunther and Dabrowski, Jarek Marek and Kitzmann, Julia and Lisker, Marco and Kulse, Philipp and Kr{\"u}ger, Andreas and Fursenko, Oksana and Costina, Ioan and Trusch, Andreas and Yamamoto, Yuji and Wolff, Andre and Mai, Andreas and Schr{\"o}der, Thomas}, title = {Graphene Synthesis and Processing on Ge Substrates}, series = {ECS transactions}, volume = {75}, journal = {ECS transactions}, number = {8}, issn = {1938-6737}, doi = {10.1149/07508.0533ecst}, pages = {533 -- 540}, language = {en} } @misc{LukosiusDabrowskiLiskeretal., author = {Lukosius, Mindaugas and Dabrowski, Jarek Marek and Lisker, Marco and Kitzmann, Julia and Schulze, Sebastian and Lippert, Gunther and Fursenko, Oksana and Yamamoto, Yuji and Schubert, Markus Andreas and Krause, Hans-Michael and Wolff, Andre and Mai, A. and Schr{\"o}der, Thomas and Lupina, Grzegorz}, title = {Metal-free, CVD Graphene synthesis on 200 mm Ge / Si(001) substrates}, series = {ACS Applied Materials and Interfaces}, volume = {8}, journal = {ACS Applied Materials and Interfaces}, number = {49}, issn = {1944-8244}, doi = {10.1021/acsami.6b11397}, pages = {33786 -- 33793}, language = {en} } @misc{GrzelaCapelliniKoczorowskietal., author = {Grzela, Tomasz and Capellini, Giovanni and Koczorowski, Wojciech and Schubert, Markus Andreas and Czajka, Ryszard and Curson, Neil J. and Heidmann, Inga and Schmidt, Thomas and Falta, Jens and Schr{\"o}der, Thomas}, title = {Growth and evolution of nickel - germanide nanonstructures on Ge(001)}, series = {Nanotechnology}, volume = {26}, journal = {Nanotechnology}, number = {38}, issn = {1361-6528}, pages = {385701}, language = {en} } @misc{WangXiaLiangetal., author = {Wang, Pu and Xia, Ming and Liang, Owen and Sun, Ke and Cipriano, Aaron F. and Schr{\"o}der, Thomas and Liu, Huinan and Xie, Ya-Hong}, title = {Label-free Neurotransmitter SERS Detection by Graphene-Gold Nanopyramid Heterostructure}, series = {Analytical Chemistry}, volume = {87}, journal = {Analytical Chemistry}, number = {20}, issn = {0003-2700}, doi = {10.1021/acs.analchem.5b01560}, pages = {10255 -- 10261}, language = {en} } @misc{BartolomeoGiubileoRomeoetal., author = {Bartolomeo, Antonio di and Giubileo, Filippo and Romeo, Francesco and Sabatino, Paolo and Carapella, Giovanni and Iemmo, Laura and Schr{\"o}der, Thomas and Lupina, Grzegorz}, title = {Graphene field effect transistors with Niobium contacts and asymmetric transfer characteristics}, series = {Nanotechnology}, volume = {26}, journal = {Nanotechnology}, number = {47}, issn = {1361-6528}, pages = {475202}, language = {en} } @misc{MatbaechiEttehadWenger, author = {Matbaechi Ettehad, Honeyeh and Wenger, Christian}, title = {Characterization and Separation of Live and Dead Yeast Cells Using CMOS-Based DEP Microfluidics}, series = {Micromachines}, volume = {12}, journal = {Micromachines}, number = {3}, issn = {2072-666X}, doi = {10.3390/mi12030270}, pages = {19}, abstract = {This study aims at developing a miniaturized CMOS integrated silicon-based microfluidic system, compatible with a standard CMOS process, to enable the characterization, and separation of live and dead yeast cells (as model bio-particle organisms) in a cell mixture using the DEP technique. DEP offers excellent benefits in terms of cost, operational power, and especially easy electrode integration with the CMOS architecture, and requiring label-free sample preparation. This can increase the likeliness of using DEP in practical settings. In this work the DEP force was generated using an interdigitated electrode arrays (IDEs) placed on the bottom of a CMOS-based silicon microfluidic channel. This system was primarily used for the immobilization of yeast cells using DEP. This study validated the system for cell separation applications based on the distinct responses of live and dead cells and their surrounding media. The findings confirmed the device's capability for efficient, rapid and selective cell separation. The viability of this CMOS embedded microfluidic for dielectrophoretic cell manipulation applications and compatibility of the dielectrophoretic structure with CMOS production line and electronics, enabling its future commercially mass production.}, language = {en} } @misc{SoltaniZarrinWenger, author = {Soltani Zarrin, Pouya and Wenger, Christian}, title = {Implementation of Siamese-Based Few-Shot Learning Algorithms for the Distinction of COPD and Asthma Subjects}, series = {Artificial Neural Networks and Machine Learning - ICANN 2020 : 29th International Conference on Artificial Neural Networks, Bratislava, Slovakia, September 15-18, 2020, Proceedings, Part I}, journal = {Artificial Neural Networks and Machine Learning - ICANN 2020 : 29th International Conference on Artificial Neural Networks, Bratislava, Slovakia, September 15-18, 2020, Proceedings, Part I}, publisher = {Springer}, address = {Cham}, doi = {10.1007/978-3-030-61609-0_34}, pages = {431 -- 440}, abstract = {This paper investigates the practicality of applying braininspired Few-Shot Learning (FSL) algorithms for addressing shortcomings of Machine Learning (ML) methods in medicine with limited data availability. As a proof of concept, the application of ML for the detection of Chronic Obstructive Pulmonary Disease (COPD) patients was investigated. The complexities associated with the distinction of COPD and asthma patients and the lack of sufficient training data for asthma subjects impair the performance of conventional ML models for the recognition of COPD. Therefore, the objective of this study was to implement FSL methods for the distinction of COPD and asthma subjects with a few available data points. The proposed FSL models in this work were capable of recognizing asthma and COPD patients with 100\% accuracy, demonstrating the feasibility of the approach for applications such as medicine with insufficient data availability.}, language = {en} } @misc{PerezAvilaGonzalezCorderoPerezetal., author = {Perez-Avila, Antonio Javier and Gonzalez-Cordero, Gerardo and Perez, Eduardo and Perez-Bosch Quesada, Emilio and Mahadevaiah, Mamathamba Kalishettyhalli and Wenger, Christian and Roldan, Juan Bautista and Jimenez-Molinos, Francisco}, title = {Behavioral modeling of multilevel HfO2-based memristors for neuromorphic circuit simulation}, series = {XXXV Conference on Design of Circuits and Integrated Systems (DCIS), Segovia, Spain}, journal = {XXXV Conference on Design of Circuits and Integrated Systems (DCIS), Segovia, Spain}, doi = {10.1109/DCIS51330.2020.9268652}, abstract = {An artificial neural network based on resistive switching memristors is implemented and simulated in LTspice. The influence of memristor variability and the reduction of the continuous range of synaptic weights into a discrete set of conductance levels is analyzed. To do so, a behavioral model is proposed for multilevel resistive switching memristors based on Al-doped HfO2 dielectrics, and it is implemented in a spice based circuit simulator. The model provides an accurate description of the conductance in the different conductive states in addition to describe the device-to-device variability}, language = {en} }