@misc{GawlińskaNęcekKotStarowiczetal., author = {Gawlińska-Nęcek, Katarzyna and Kot, Małgorzata and Starowicz, Zbigniew and Janusz-Skuza, Marta and Panek, Piotr and Marth, Ludwig and Plate, Paul and Flege, Jan Ingo}, title = {Reaction dynamics between formamidinium lead iodide and Copper Oxide}, series = {ACS Applied Materials \& Interfaces}, volume = {16}, journal = {ACS Applied Materials \& Interfaces}, number = {42}, publisher = {American Chemical Society (ACS)}, issn = {1944-8244}, doi = {10.1021/acsami.4c12990}, pages = {57878 -- 57887}, abstract = {Copper oxide (CuOx) has been announced as a very promising hole-transporting layer for perovskite solar cells. However, in our previous work, we have shown that once a formamidinium lead triiodide (FAPI) perovskite is spin-coated on a spray-coated cuprous oxide (Cu2O) substrate, the Cu2O diffuses into and reacts with the FAPI film. In order to verify if the degradation products are related to the oxidation state of CuOx and/or its preparation method, in this work, we first prepared CuOx films by thermal oxidation at temperatures ranging from 120 to 300 °C. While increasing the process temperature, a transformation from copper I (Cu2O) to copper II (CuO) oxidation states was observed. For both oxidation states of copper, FAPI perovskite degradation was found; however, some alterations in the reaction products were noticed. In contrast to our expectations, the introduction of an ultrathin plasma-enhanced atomic layer deposited Al2O3 layer in between both films only partially blocked the CuOx migration into the FAPI film. It can be concluded that regardless of the chemical composition and/or preparation method of CuOx, the overlayered FAPI film gets decomposed. In order to use CuOx as a hole-transporting layer in solar cells, new strategies must be developed to limit these unwanted chemical reactions.}, language = {en} } @misc{MerteBraudBussetal., author = {Merte, Lindsay R. and Braud, Nicolas and Buß, Lars and Bisbo, Malthe Kj{\ae}r and Wallander, Harald J. and Krisponeit, Jon-Olaf and Flege, Jan Ingo and Hammer, Bj{\o}rk and Falta, Jens and Lundgren, Edvin}, title = {Oxygen Storage by Tin Oxide Monolayers on Pt3Sn(111)}, series = {The Journal of Physical Chemistry. C}, volume = {127}, journal = {The Journal of Physical Chemistry. C}, number = {6}, issn = {1932-7447}, doi = {10.1021/acs.jpcc.2c09041}, pages = {2988 -- 2994}, abstract = {The high performance of platinum-tin catalysts for oxidation reactions has been linked to the formation of tin oxides at the metal surface, but little is known about the structure of these oxides or the chemical behavior that determines their catalytic properties. We show here how surface oxides on Pt3Sn(111) incorporate oxygen at the metal interface, which may be subsequently removed by reaction with CO. The storage mechanism, where oxygen uptake occurs without loss of interfacial Pt-Sn bonds, is enabled by the peculiar asymmetrical coordination state of Sn2+. O atoms are bound at pocket sites in the 2D oxide sheet between these outward-buckled Sn atoms and metallic Sn in the alloy surface below.}, language = {en} } @misc{ZuoMalekshahiByranvandKodalleetal., author = {Zuo, Weiwei and Malekshahi Byranvand, Mahdi and Kodalle, Tim and Zohdi, Mohammadreza and Lim, Jaekeun and Carlsen, Brian and Friedlmeier, Theresa Magorian and Kot, Małgorzata and Das, Chittaranjan and Flege, Jan Ingo and Zong, Wansheng and Abate, Antonio and Sutter-Fella, Carolin M. and Li, Meng and Saliba, Michael}, title = {Coordination Chemistry as a Universal Strategy for a Controlled Perovskite Crystallization}, series = {Advanced Materials}, volume = {35}, journal = {Advanced Materials}, number = {39}, issn = {0935-9648}, doi = {10.1002/adma.202302889}, abstract = {The most efficient and stable perovskite solar cells (PSCs) are made from a complex mixture of precursors. Typically, to then form a thin film, an extreme oversaturation of the perovskite precursor is initiated to trigger nucleation sites, e.g., by vacuum, an airstream, or a so-called antisolvent. Unfortunately, most oversaturation triggers do not expel the lingering (and highly coordinating) dimethyl sulfoxide (DMSO), which is used as a precursor solvent, from the thin films; this detrimentally affects long-term stability. In this work, (the green) dimethyl sulfide (DMS) is introduced as a novel nucleation trigger for perovskite films combining, uniquely, high coordination and high vapor pressure. This gives DMS a universal scope: DMS replaces other solvents by coordinating more strongly and removes itself once the film formation is finished. To demonstrate this novel coordination chemistry approach, MAPbI3 PSCs are processed, typically dissolved in hard-to-remove (and green) DMSO achieving 21.6\% efficiency, among the highest reported efficiencies for this system. To confirm the universality of the strategy, DMS is tested for FAPbI3 as another composition, which shows higher efficiency of 23.5\% compared to 20.9\% for a device fabricated with chlorobenzene. This work provides a universal strategy to control perovskite crystallization using coordination chemistry, heralding the revival of perovskite compositions with pure DMSO.}, language = {en} } @misc{BussBraudEwertetal., author = {Buß, Lars and Braud, Nicolas and Ewert, Moritz and Jugovac, Matteo and Mentes, Tevfik Onur and Locatelli, Andrea and Falta, Jens and Flege, Jan Ingo}, title = {In-situ growth characterization of 2D heterostructures: MoSe2 on intercalated graphene/Ru(0001)}, series = {Verhandlungen der DPG}, journal = {Verhandlungen der DPG}, publisher = {Deutsche Physikalische Gesellschaft}, address = {Bad Honnef}, issn = {0420-0195}, abstract = {Despite the great fundamental interest in 2D heterostructures, most of the investigated 2D heterostructures were realized by mechanical exfoliation or chemical vapor deposition in the millibar range, preventing true in-situ characterization of the growth process. Here, we have investigated the growth of MoSe2 on single-layer graphene on Ru(0001) via real-time in-situ low-energy electron microscopy and micro-diffraction. After preparation of the graphene by standard procedures from an ethylene precursor, MoSe2 has been prepared via co-deposition of Mo and Se. Prior Se intercalation of the graphene appears to enhance the subsequent growth of MoSe2 on the graphene. At elevated temperatures, rotational ordering of the MoSe2 is facilitated by the strongly enhanced mobility of single-domain MoSe2 islands that align with the high symmetry orientations of the underlying graphene, indicating a non-negligible interaction between the two van-der-Waals materials. Micro-spot angle-resolved photoemission proves the monolayer nature of the as-grown MoSe2 as well as the free-standing character of the Se-intercalated graphene underneath.}, language = {en} } @misc{KostoMoralesDevietal., author = {Kosto, Yuliia and Morales, Carlos and Devi, Anjana and Henkel, Karsten and Flege, Jan Ingo}, title = {Activity of cerium oxide thin films prepared by atomic layer deposition using custom and commercial precursors}, series = {Verhandlungen der DPG}, journal = {Verhandlungen der DPG}, publisher = {Deutsche Physikalische Gesellschaft}, address = {Bad Honnef}, issn = {0420-0195}, abstract = {Atomic layer deposition (ALD) allows preparation of conformal coatings with possibility to control their thickness at the submonolayer level, making it a good tool for depositing active layers on 3D structures. Our group is working on cerium oxide-based materials for hydrogen detection, which is difficult at ambient conditions due to the low sensitivity and long response time of the sensors. The cerium oxide layers prepared by ALD contain a lot of defects and provide an opportunity to overcome these complications. Thickness and morphology of the oxide films play an important role in defining the Ce3+/Ce4+ ratio, as well as the interface with the used substrate. Here, we compare cerium oxide thin films deposited by ALD techniques on SiO2 and Al2O3 substrates. The results reveal that the interface to the substrate can considerably influence the reactivity of the cerium oxide toward hydrogen and oxygen. Preparation of the oxides using two different precursors (commercial Ce(thd)4 and custom Ce(dpdmg)3) has been demonstrated to affect the redox properties of the films, their reactivity, and the reversibility.}, language = {en} } @misc{KotKediaPlateetal., author = {Kot, Małgorzata and Kedia, Mayank and Plate, Paul and Marth, Ludwig and Henkel, Karsten and Flege, Jan Ingo}, title = {Application of plasma enhanced atomic layer deposition process of alumina on perovskite film boosts efficiency of solar cells}, series = {Verhandlungen der DPG}, journal = {Verhandlungen der DPG}, publisher = {Deutsche Physikalische Gesellschaft}, address = {Bad Honnef}, issn = {0420-0195}, abstract = {It is assumed that plasma-enhanced atomic layer deposition (PEALD) cannot be used to prepare thin films on sensitive organic-inorganic perovskites because the plasma destroys the perovskite film and thus deteriorates its photophysical properties. Here, we prove that using an appropriate geometry of the ALD system (SENTECH SI PEALD system) and suitable process parameters it is possible to coat perovskites with alumina by PEALD. Spectromicroscopy followed by electrical characterisation reveal that as long as the PEALD process is not optimized (too long plasma pulses) one gets degradation of the perovskite as well as dissociation of the created iodine pentoxide (during PEALD) under light that causes a valence band maximum (VBM) shift to the Fermi level and thus significantly decreases the solar cell efficiency. However, once the PEALD process parameters are optimized, no VBM shift is observed. Moreover, the solar cell efficiency depends inversely on process temperature and layer thickness.}, language = {en} } @misc{LachnittDasMenonetal., author = {Lachnitt, Jan and Das, Shuvankar and Menon, Krishnakumar S. R. and Mandal, Suman and Flege, Jan Ingo}, title = {The dependence of structure on thickness of NiO(100) films on Ag(100) studied by IV-LEED}, series = {Verhandlungen der DPG}, journal = {Verhandlungen der DPG}, publisher = {Deutsche Physikalische Gesellschaft}, address = {Bad Honnef}, issn = {0420-0195}, abstract = {Ultrathin NiO films have prospective applications especially in heterogeneous catalysis, microelectronics, and spintronics and are thus an object of active research. The Ag(100) surface is the usual support for these films, as its cubic lattice parameter is only 2.2 \% smaller than that of NiO, which enables pseudomorphic growth at very low thicknesses. We have studied the NiO(100) surface for three thicknesses of the oxide: 2 ML on Ag(100), 20 ML on the same substrate, and a bulk single crystal. We have used intensity-voltage low-energy electron diffraction (IV-LEED) in combination with X-ray photoelectron spectroscopy (XPS) and density-functional theory (DFT) calculations. We focus on differences among the three thicknesses, mainly in terms of lattice parameters and surface defects, and our study deepens existing knowledge of the growth of ultrathin NiO films. The IV-LEED calculations have been carried out using the AQuaLEED package, which will also be briefly presented.}, language = {en} } @misc{MahmoodinezhadMoralesKotetal., author = {Mahmoodinezhad, Ali and Morales, Carlos and Kot, Małgorzata and Naumann, Franziska and Plate, Paul and Henkel, Karsten and Flege, Jan Ingo}, title = {A super-cycle approach to atomic layer deposition of indium-gallium-zinc oxide at low temperature}, series = {Verhandlungen der DPG}, journal = {Verhandlungen der DPG}, publisher = {Deutsche Physikalische Gesellschaft}, address = {Bad Honnef}, issn = {0420-0195}, abstract = {The continuing development of multifunctional devices needs novel multicomponent oxide layers, demanding a high control of both composition and thickness during their preparation. To this end, single metal oxides exhibiting high structural quality and conformity have successfully been grown by atomic layer deposition (ALD). However, the deposition of more complex compounds with specific optical and electrical properties is still challenging. In this work, we follow a bottom-up approach to design an ALD super-cycle to grow mixed indium-gallium-zinc oxide (IGZO) films with a controllable composition. For the formation of the individual indium, gallium, and zinc oxides, we found the use of plasma-enhanced ALD (PEALD) at 150 °C to be favorable when using the organometallic precursors trimethylindium, trimethylgallium, and diethylzinc together with oxygen plasma. The PEALD approach of IGZO films can particularly overcome a nucleation delay within the ZnO sub-cycle known from thermal ALD, achieving a higher growth per cycle and improving the quality and composition homogeneity of the films as shown by in-situ spectroscopic ellipsometry and ex-situ X-ray photoelectron spectroscopy.}, language = {en} } @misc{BraudBussLundgrenetal., author = {Braud, Nicolas and Buß, Lars and Lundgren, Edvin and Merte, Lindsay R. and Wallander, Harald J. and Krisponeit, Jon-Olaf and Locatelli, Andrea and Mentes, Tevfik Onur and Jugovac, Matteo and Flege, Jan Ingo and Falta, Jens}, title = {Cleaning and tailoring the Pt3Sn(111) surface for surface experiments}, series = {Surface Science}, volume = {732}, journal = {Surface Science}, issn = {0039-6028}, doi = {10.1016/j.susc.2023.122281}, abstract = {The cleaning process of the bimetallic Pt3Sn(111) surface has been studied by means of low-energy electron microscopy (LEEM), microspot low-energy electron diffraction (-LEED), and X-ray photoemission electron microscopy (XPEEM). Different cleaning procedures, performed under ultra-high vacuum conditions (UHV), including sputtering with argon ions and repeated cycles of annealing up to 1500 K were investigated. In this work, we show that a clean Pt3Sn(111) surface of high structural quality with a sharp and brilliant (2 × 2) bulk reconstruction in LEED as well as a perfectly smooth surface with terraces of micron size can be achieved by sputtering, annealing at very high temperatures, followed by a subsequent slow (0.09 K/s) and careful cooling procedure. Additionally, we show the possibility of tailoring the Sn concentration in the topmost layers of Pt3Sn(111) as a function of annealing temperature and subsequent cooling rate. Structural changes of the surface are induced by Sn segregation combined with a surface order-disorder transition at 1340 K. Moreover, two new surface reconstructions depending on the cooling rate are reported.}, language = {en} } @misc{MańkowskaMazurDomaradzkietal., author = {Mańkowska, Ewa and Mazur, Michał and Domaradzki, Jarosław and Mazur, Piotr and Kot, Małgorzata and Flege, Jan Ingo}, title = {Hydrogen Gas Sensing Properties of Mixed Copper-Titanium Oxide Thin Films}, series = {Sensors}, volume = {23}, journal = {Sensors}, number = {8}, issn = {1424-8220}, doi = {10.3390/s23083822}, abstract = {Hydrogen is an efficient source of clean and environmentally friendly energy. However, because it is explosive at concentrations higher than 4\%, safety issues are a great concern. As its applications are extended, the need for the production of reliable monitoring systems is urgent. In this work, mixed copper-titanium oxide ((CuTi)Ox) thin films with various copper concentrations (0-100 at.\%), deposited by magnetron sputtering and annealed at 473 K, were investigated as a prospective hydrogen gas sensing material. Scanning electron microscopy was applied to determine the morphology of the thin films. Their structure and chemical composition were investigated by X-ray diffraction and X-ray photoelectron spectroscopy, respectively. The prepared films were nanocrystalline mixtures of metallic copper, cuprous oxide, and titanium anatase in the bulk, whereas at the surface only cupric oxide was found. In comparison to the literature, the (CuTi)Ox thin films already showed a sensor response to hydrogen at a relatively low operating temperature of 473 K without using any extra catalyst. The best sensor response and sensitivity to hydrogen gas were found in the mixed copper-titanium oxides containing similar atomic concentrations of both metals, i.e., 41/59 and 56/44 of Cu/Ti. Most probably, this effect is related to their similar morphology and to the simultaneous presence of Cu and Cu2O crystals in these mixed oxide films. In particular, the studies of surface oxidation state revealed that it was the same for all annealed films and consisted only of CuO. However, in view of their crystalline structure, they consisted of Cu and Cu2O nanocrystals in the thin film volume.}, language = {en} } @misc{BakiAbdeldayemMoralesetal., author = {Baki, Aykut and Abdeldayem, Mohamed and Morales, Carlos and Flege, Jan Ingo and Klimm, Detlef and Bierwagen, Oliver and Schwarzkopf, Jutta}, title = {Potential of La-Doped SrTiO3 Thin Films Grown by Metal-Organic Vapor Phase Epitaxy for Thermoelectric Applications}, series = {Crystal Growth \& Design}, volume = {23}, journal = {Crystal Growth \& Design}, number = {4}, issn = {1528-7483}, doi = {10.1021/acs.cgd.2c01438}, pages = {2522 -- 2530}, abstract = {La-doped SrTiO3 thin films with high structural quality were homoepitaxially grown by the metal-organic vapor phase epitaxy (MOVPE) technique. Thermogravimetric characterization of the metal-organic precursors determines suitable flash evaporator temperatures for transferring the liquid source materials in the gas phase of the reactor chamber. An adjustment of the charge carrier concentration in the films, which is necessary for optimizing the thermoelectric power factor, was performed by introducing a defined amount of the metal-organic compound La(tmhd)3 and tetraglyme to the liquid precursor solution. X-ray diffraction and atomic force microscopy verified the occurrence of the pure perovskite phase exhibiting a high structural quality for all La concentrations. The electrical conductivity of the films obtained from Hall-effect measurements increases linearly with the La concentration in the gas phase, which is attributed to the incorporation of La3+ ions on the Sr2+ perovskite sites by substitution inferred from photoemission spectroscopy. The resulting structural defects were discussed concerning the formation of occasional Ruddlesden-Popper-like defects. The thermoelectric properties determined by Seebeck measurements demonstrate the high potential of SrTiO3 thin films grown by MOVPE for thermoelectric applications.}, language = {en} } @misc{MoralesKostoTschammeretal., author = {Morales, Carlos and Kosto, Yuliia and Tschammer, Rudi and Henkel, Karsten and Flege, Jan Ingo}, title = {Reduction by H2 exposure at room temperature of ceria ultrathin films grown by atomic layer deposition}, series = {Verhandlungen der DPG}, journal = {Verhandlungen der DPG}, publisher = {Deutsche Physikalische Gesellschaft}, address = {Bad Honnef}, issn = {0420-0195}, abstract = {Atomic layer deposition (ALD) exhibits a high potential for integration as a scalable process in microelectronics, allowing well-controlled layer-by-layer deposition and conformal growth on 3D structures. Yet, the ALD technique is also well known to lead to amorphous and defective, non-stoichiometric films, potentially resulting in modified materials properties that, in the case of ultra-thin deposits, can also be affected by film/substrate interaction. Interestingly, initial in situ X-ray photoemission spectroscopy (XPS) measurements of ceria ALD-deposits on Al2O3/Si, sapphire, and SiO2 substrates confirm a Ce3+/Ce4+ mixture dependent on the substrate interaction, deposit thickness, and morphology. Using near-ambient pressure XPS, we have significantly reduced ultrathin (< 10 nm) ceria films grown by ALD by exposing them to different O2/H2 partial pressures at moderate temperatures (< 525K). Notably, the total amount of reduction to Ce3+ is found to depend on the deposit thickness and initial ceria/substrate interaction. Furthermore, the intrinsic defects related to the ALD method seem to play a critical role in the reversible reduction at room temperature.}, language = {en} } @misc{ScheweSulaimanBussetal., author = {Schewe, Lukas and Sulaiman, Cathy and Buß, Lars and Ewert, Moritz and Flege, Jan Ingo}, title = {In-situ photoemission electron microscopy investigation of mono- and bilayer graphene growth on Ru(10-10)}, series = {Verhandlungen der DPG}, journal = {Verhandlungen der DPG}, publisher = {Deutsche Physikalische Gesellschaft}, address = {Bad Honnef}, issn = {0420-0195}, abstract = {Epitaxial graphene growth has often been studied on close-packed transition metal substrates, e. g., the Ru(0001) surface, which is a well-studied model system for strong graphene-support interaction. Here, we focus on a Ru surface with different symmetry, i. e., the Ru(10-10) surface, to investigate the influence of the presumably modified graphene-substrate interaction on the growth of epitaxial monolayer and bilayer graphene (MLG, BLG) islands. The structural and chemical differences of the graphene on the two different surfaces are investigated by photoemission electron microscopy (PEEM), delivering information on both morphology and electronic structure. In-situ PEEM observation of graphene growth on the Ru(10-10) substrate by ethylene decomposition reveals the growth characteristics of MLG and BLG, the latter showing second layer nucleation via surface segregation of carbon. Furthermore, depending on growth temperature and relative orientation of the growing islands and surface steps, different growth characteristics are observed, in contrast to previous studies of the graphene/Ru(0001) system whereas similar electronic properties seem to prevail. Yet, when the MLG is decoupled from the Ru(10-10) substrate via intercalation of oxygen a distinct shift in work function is identified, slightly different from the resulting shift on Ru(0001).}, language = {en} } @misc{SulaimanScheweBussetal., author = {Sulaiman, Cathy and Schewe, Lukas and Buß, Lars and Ewert, Moritz and Flege, Jan Ingo}, title = {In-situ monolayer graphene growth on Ru(10-10): an electron microscopy study}, series = {Verhandlungen der DPG}, journal = {Verhandlungen der DPG}, publisher = {Deutsche Physikalische Gesellschaft}, address = {Bad Honnef}, issn = {0420-0195}, abstract = {During the last decade, the controlled growth of monolayer (MLG) and bilayer graphene has extensively been studied on the hexagonal Ru(0001) surface, which is a system that is known to form strong chemical bonds at the metal-graphene interface. Yet, little attention was paid to the influence of the substrate orientation that was demonstrated to have a significant impact for graphene growth on the Ir(001) and Ir(111) surfaces, the latter exhibiting a weak coupling between the graphene and the support. Therefore, in this study we have grown graphene on the rectangular Ru(10-10) surface by segregation and ethylene-supported chemical vapor deposition. A photoemission and low-energy electron microscope (PEEM \& LEEM) has been utilized to directly characterize the MLG growth process with respect to variations in substrate temperature and step orientation. The expansion of the MLG islands is compared to the well-established carpet-growth mode on the Ru(0001) surface. These results have been complemented by probing of the occupied and unoccupied electronic structure of the islands using PEEM and intensity-voltage LEEM. Furthermore, the existence of two preferential surface reconstructions is identified via micro-illumination low-energy electron diffraction (LEED), whose spatial distribution is revealed by employing dark-field LEEM imaging.}, language = {en} } @misc{TschammerBussMoralesetal., author = {Tschammer, Rudi and Buß, Lars and Morales, Carlos and Senanayake, Sanjaya D. and Falta, Jens and Flege, Jan Ingo}, title = {In situ characterization of cerium oxide on Au(111) under reducing and oxidizing conditions by low-energy electron microscopy}, series = {Verhandlungen der DPG}, journal = {Verhandlungen der DPG}, publisher = {Deutsche Physikalische Gesellschaft}, address = {Bad Honnef}, issn = {0420-0195}, abstract = {The development of novel catalysts for a variety of applications is a key challenge for modern catalysis. Inverse metal oxide catalysts consisting of oxide nanoparticles dispersed on a metal support have recently attracted much attention, showing higher activity and selectivity compared to traditional catalytic systems, harnessing synergistic effects attributed to the so-called metal-support interaction. To gain further insights, we deposited cerium oxide nanoparticles on Au(111) and studied this system by low-energy electron microscopy (LEEM) and low-energy electron diffraction (LEED). The prepared samples demonstrate a distinct correlation between the deposition temperature and the structural order of the nanoparticles. This has been expanded upon by exploring the changes induced by reduction with H2 and reoxidation with O2 or CO2, again exhibiting a connection between structural order and activity, while also showing the influence of the oxide-metal interaction on the stability of cerium oxide under reducing conditions.}, language = {en} } @misc{AbdeldayemBakiMoralesetal., author = {Abdeldayem, Mohamed and Baki, Aykut and Morales, Carlos and Flege, Jan Ingo and Klimm, Detlef and Fiedler, Andreas and Bierwagen, Oliver and Schwarzkopf, Jutta}, title = {Potential of La-doped SrTiO3 thin films grown by metal-organic vapor phase epitaxy for thermoelectric applications}, series = {Verhandlungen der DPG}, journal = {Verhandlungen der DPG}, publisher = {Deutsche Physikalische Gesellschaft}, address = {Bad Honnef}, issn = {0420-0195}, abstract = {Conversion of waste heat energy into electrical energy by exploiting the thermoelectric effect in solids promises a great contribution to energy harvesting concepts. However, most thermoelectric materials use toxic Pb or Te. Recently, La-doped SrTiO3 has gained a lot of interest as a potential candidate for thermoelectric devices for its good thermoelectric properties, chemical and thermal stability. In this paper, we report the homoepitaxial growth of La-doped SrTiO3 thin films by metalorganic vapor phase epitaxy (MOVPE) technique, which works at high oxygen partial pressures and offers upscaling potential for industry. The adjustment of charge carrier concentration, necessary for thermoelectric power factor optimization, was performed by introducing a defined amount of the metal-organic precursor La(tmhd)3 and tetraglyme to the liquid precursor solution. X-ray diffraction and atomic force microscopy verified a pure perovskite phase with high structural quality. The electrical conductivity increases linearly with the La concentration in the gas phase, which is attributed to the substitution of La+3 ions on the Sr+2 sites inferred from photoemission spectroscopy.}, language = {en} } @misc{AngrickThiedeReimannetal., author = {Angrick, Christoph and Thiede, Christian and Reimann, Andre and Henriksen, Annika and Mutzke, Nicole and Ewert, Moritz and Buß, Lars and Falta, Jens and Flege, Jan Ingo and Donath, Markus}, title = {Spin-polarized very-low-energy electron diffraction from spin-orbit- and/or exchange-influenced targets}, series = {Verhandlungen der DPG}, journal = {Verhandlungen der DPG}, publisher = {Deutsche Physikalische Gesellschaft}, address = {Bad Honnef}, issn = {0420-0195}, abstract = {Exchange (XC) or spin-orbit (SOC) interaction cause electron scattering from surfaces to be spin dependent. The resulting spin filtering of the scattered electron beam can be used in spin-polarization analyzers. These analyzers are implemented in, for instance, photoemission setups to obtain spin resolution. Therefore, for promising targets, electron reflectivity and resulting spin asymmetry of very-low-energy electrons are measured for a wide range of incident electron energies and angles. By this, the investigated target is put to a test regarding the usability as a scattering target in a spin-polarization analyzer. Here, several results of SOC- as well as XC-influenced targets are presented. The results of the SOC-influenced targets Au(111), single-layer MoS2/Au(111) and W(110) [1] are compared with the results of the XC-influenced target Fe(001)-p(1x1)O [2]. Additionally, the influence of SOC interaction in the case of the XC-influenced target is investigated. The spin asymmetry caused by SOC is found to be one order of magnitude smaller than the spin asymmetry caused by XC. [1] Angrick et al., J. Phys.: Condens. Matter 33, 115001 (2020). [2] Thiede et al., Phys. Rev. Applied 1, 054003 (2014).}, language = {en} } @misc{BussBraudEwertetal., author = {Buß, Lars and Braud, Nicolas and Ewert, Moritz and Jugovac, Matteo and Mente{\c{s}}, Tevfik Onur and Locatelli, Andrea and Falta, Jens and Flege, Jan Ingo}, title = {Unraveling van der Waals epitaxy: A real-time in-situ study of MoSe2 growth on graphene/Ru(0001)}, series = {Ultramicroscopy}, volume = {250}, journal = {Ultramicroscopy}, issn = {0304-3991}, doi = {10.1016/j.ultramic.2023.113749}, pages = {7}, abstract = {In the present work we investigate the growth of monolayer MoSe2 on selenium-intercalated graphene on Ru(0001), a model layered heterostructure combining a transition metal dichalcogenide with graphene, using low energy electron microscopy and micro-diffraction. Real-time observation of MoSe2 on graphene growth reveals the island nucleation dynamics at the nanoscale. Upon annealing, larger islands are formed by sliding and attachment of multiple nanometer-sized MoSe2 flakes. Local micro-spot angle-resolved photoemission spectroscopy reveals the electronic structure of the heterostructure, indicating that no charge transfer occurs within adjacent layers. The observed behavior is attributed to intercalation of Se at the graphene/Ru(0001) interface. The unperturbed nature of the proposed heterostructure therefore renders it as a model system for investigations of graphene supported TMD nanostructures.}, language = {en} } @misc{KediaRaiPhirkeetal., author = {Kedia, Mayank and Rai, Monika and Phirke, Himanshu and Aranda, Clara A. and Das, Chittaranjan and Chirvony, Vladimir and Boehringer, Stephan and Kot, Małgorzata and Malekshahi Byranvand, Mahdi and Flege, Jan Ingo and Redinger, Alex and Saliba, Michael}, title = {Light Makes Right: Laser Polishing for Surface Modification of Perovskite Solar Cells}, series = {ACS Energy Letters}, volume = {8}, journal = {ACS Energy Letters}, issn = {2380-8195}, doi = {10.1021/acsenergylett.3c00469}, pages = {2603 -- 2610}, abstract = {Interface engineering is a common strategy for passivating surface defects to attain open circuit voltages (Voc) in perovskite solar cells (PSCs). In this work, we introduce the concept of polishing a perovskite thin-film surface using a nanosecond (ns) pulsed ultraviolet laser to reduce surface defects, such as dangling bonds, undesirable phases, and suboptimal stoichiometry. A careful control of laser energy and scanning speed improves the photophysical properties of the surface without compromising the thickness. Using laser polishing, a Voc of 1.21 V is achieved for planar PSCs with a triple cation composition, showing an improved perovskite/hole transport interface by mitigating surface recombination losses. We measure an efficiency boost from 18.0\% to 19.3\% with improved stability of up to 1000 h. The results open the door to a new class of surface modification using lasers for interface passivation in well-controllable, automated, scalable, and solvent-free surface treatments.}, language = {en} } @misc{MazurKapuścikWeichbrodtetal., author = {Mazur, Michał and Kapuścik, Paulina and Weichbrodt, Wiktoria and Domaradzki, Jarosław and Mazur, Piotr and Kot, Małgorzata and Flege, Jan Ingo}, title = {WO3 Thin-Film Optical Gas Sensors Based on Gasochromic Effect towards Low Hydrogen Concentrations}, series = {Materials}, volume = {16}, journal = {Materials}, number = {10}, issn = {1996-1944}, doi = {10.3390/ma16103831}, pages = {17}, abstract = {Hydrogen gas sensors have recently attracted increased interest due to the explosive nature of H2 and its strategic importance in the sustainable global energy system. In this paper, the tungsten oxide thin films deposited by innovative gas impulse magnetron sputtering have been investigated in terms of their response to H2. It was found that the most favourable annealing temperature in terms of sensor response value, as well as response and recovery times, was achieved at 673 K. This annealing process caused a change in the WO3 cross-section morphology from a featureless and homogenous form to a rather columnar one, but still maintaining the same surface homogeneity. In addition to that, the full-phase transition from an amorphous to nanocrystalline form occurred with a crystallite size of 23 nm. It was found that the sensor response to only 25 ppm of H2 was equal to 6.3, which is one of the best results presented in the literature so far of WO3 optical gas sensors based on a gasochromic effect. Moreover, the results of the gasochromic effect were correlated with the changes in the extinction coefficient and the concentration of the free charge carriers, which is also a novel approach to the understanding of the gasochromic phenomenon.}, language = {en} } @misc{PożarowskaPleinesEwertetal., author = {Pożarowska, Emilia and Pleines, Linus and Ewert, Moritz and Prieto, Mauricio J. and Tănase, Liviu Christian and Souza Caldas, Lucas de and Tiwari, Aarti and Schmidt, Thomas and Falta, Jens and Krasovskii, Eugene and Morales, Carlos and Flege, Jan Ingo}, title = {Preparation and stability of the hexagonal phase of samarium oxide on Ru(0001)}, series = {Ultramicroscopy}, volume = {250}, journal = {Ultramicroscopy}, issn = {0304-3991}, doi = {10.1016/j.ultramic.2023.113755}, abstract = {We have used low-energy electron microscopy (LEEM), micro-illumination low-energy electron diffraction (µLEED) supported by ab initio calculations, and X-ray absorption spectroscopy (XAS) to investigate in-situ and in real-time the structural properties of Sm2O3 deposits grown on Ru(0001), a rare-earth metal oxide model catalyst. Our results show that samarium oxide grows in a hexagonal A-Sm2O3 phase on Ru(0001), exhibiting a (0001) oriented-top facet and (113) side facets. Upon annealing, a structural transition from the hexagonal to cubic phase occurs, in which the Sm cations exhibit the +3 oxidation state. The unexpected initial growth in the A-Sm2O3 hexagonal phase and its gradual transition to a mixture with cubic C-Sm2O3 showcases the complexity of the system and the critical role of the substrate in the stabilization of the hexagonal phase, which was previously reported only at high pressures and temperatures for bulk samaria. Besides, these results highlight the potential interactions that Sm could have with other catalytic compounds with respect to the here gathered insights on the preparation conditions and the specific compounds with which it interacts.}, language = {en} } @misc{SchmeisserMuellerHenkel, author = {Schmeißer, Dieter and M{\"u}ller, Klaus and Henkel, Karsten}, title = {Photosensitive and Rectifying Properties of Ga2O3 Described by Polaronic Screened Electrons and Internal Potentials}, series = {Journal of Physical Chemistry C}, volume = {127}, journal = {Journal of Physical Chemistry C}, number = {47}, issn = {1932-7447}, doi = {10.1021/acs.jpcc.3c05785}, pages = {23077 -- 23089}, abstract = {The photosensitive and rectifying properties of Ga2O3 are described by (n-type) intrinsic (π-) electrons. These polaronic screened multiatomic carriers populate the intrinsic defect states within the ionic gap; their spectroscopic evidence is based on resonant photoemission spectroscopy data that also provide the ionicity factor of Ga2O3 and the size of the ionic gap. The π-electron density depends on the internal potential and its photo- and field-induced dipole contributions, and it describes the observed combined ohmic-exponential carrier densities and current-voltage dependences. The π-electron dynamics is caused by pairing and dissociation dipoles in the bulk of Ga2O3. The material properties of the electrode contribute via external chemical potentials and define the criteria for ohmic and rectifying contacts. This quantitative and predictive concept not only convinces by perfect agreement with published experimental data but also points toward the achievable performance limits of UV absorbers and rectifying devices.}, language = {en} } @misc{WallanderGajdekAlbertinetal., author = {Wallander, Harald J. and Gajdek, Dorotea and Albertin, Stefano and Harlow, Gary and Braud, Nicolas and Buß, Lars and Krisponeit, Jon-Olaf and Flege, Jan Ingo and Falta, Jens and Lundgren, Edvin and Merte, Lindsay R.}, title = {Dynamic Behavior of Tin at Platinum Surfaces during Catalytic CO Oxidation}, series = {ACS Catalysis}, volume = {13}, journal = {ACS Catalysis}, number = {24}, issn = {2155-5435}, doi = {10.1021/acscatal.3c04657}, pages = {16158 -- 16167}, abstract = {Platinum-tin surfaces are active for CO oxidation, but their activity and the effects of tin oxide phases that form under reaction conditions are poorly understood. We have studied surface alloys of tin prepared on platinum single crystals during catalytic CO oxidation using near-ambient-pressure X-ray photoemission spectroscopy. On the flat terraces of Sn/Pt(111), a wetting layer of Sn(II) surface oxide forms, while on the stepped Sn/Pt(223) surface, 3D clusters of Sn(IV) oxide are formed. Oxidation of tin by O2 competes with the reduction of the oxides by CO under reaction conditions. Oxides that do not completely cover the surface can be reduced to metallic tin, while a fully covering layer of Sn(II) oxide cannot, showing the importance of oxide edge sites for the reduction process. The samples where 2D oxide layers are formed show a higher CO oxidation activity than for pure platinum at low temperatures, while the Sn(IV) oxide clusters on the stepped surfaces do not affect the measured CO oxidation rate. We therefore identify 2D Sn(II) oxide as an active phase for CO oxidation. While oxide island edges appear to make only minor contributions to conversion under these conditions, reactions at these sites play a major role in determining the phases present and their transformations.}, language = {en} }