@phdthesis{Goryachko, author = {Goryachko, Andriy}, title = {Investigations of perspective materials for aggressively scaled gate stacks and contact structures of MOS devices}, url = {http://nbn-resolving.de/urn:nbn:de:kobv:co1-000000342}, language = {en} } @article{BatchelorFollathSchmeisser, author = {Batchelor, David R. and Follath, Rolf and Schmeißer, Dieter}, title = {Commissioning Results of the BTUC-PGM beamline}, language = {en} } @misc{BoehmeLloydSpetzLundstroemetal., author = {B{\"o}hme, O. and Lloyd Spetz, Anita and Lundstr{\"o}m, Ingemar and Schmeißer, Dieter}, title = {Nanoparticles as the Active Element of High-Temperature Metal-Insulator-Silicon Carbide Gas Sensors}, series = {Advanced Materials}, volume = {13}, journal = {Advanced Materials}, number = {8}, issn = {1521-4095}, pages = {597 -- 601}, language = {en} } @misc{GuerekAppelMikaloetal., author = {G{\"u}rek, A. G. and Appel, G{\"u}nter and Mikalo, Ricardo Pablo and Schmeißer, Dieter}, title = {Synthesis of dihydroxy silicon phthalocyanine tetrasulfonic acid and poly-µ-oxo silicon phthalocyanine tetrasulfonic acid}, series = {Journal of Porphyrins and Phthalocyanines}, volume = {5}, journal = {Journal of Porphyrins and Phthalocyanines}, number = {10}, issn = {1099-1409}, pages = {751 -- 757}, language = {en} } @misc{HenkelOpreaPaloumpaetal., author = {Henkel, Karsten and Oprea, A. and Paloumpa, Ioanna and Appel, G{\"u}nter and Schmeißer, Dieter and Kamieth, P.}, title = {Selective polypyrrole electrodes for quartz microbalances : NO2 and gas flux sensitivities}, series = {Sensors and Actuators : B, Chemical 76(2001)1-3}, volume = {76}, journal = {Sensors and Actuators : B, Chemical 76(2001)1-3}, number = {1-3}, issn = {0925-4005}, pages = {124 -- 129}, language = {en} } @misc{HoffmannMikaloYfantisetal., author = {Hoffmann, Patrick and Mikalo, Ricardo Pablo and Yfantis, Alexandros D. and Batchelor, David R. and Appel, G{\"u}nter and Schmeißer, Dieter}, title = {A Spectro-Microscopic Approach for Thin Film Analysis Grain Boundaries in mc-Si and Sn/SnO2 Nano Particles}, series = {Microchimica Acta}, volume = {136}, journal = {Microchimica Acta}, number = {3-4}, issn = {1436-5073}, pages = {109 -- 113}, language = {en} } @article{LopezBitzerHelleretal., author = {Lopez, A. and Bitzer, Thomas and Heller, Thomas and Richardson, Neville V.}, title = {Adsorption of water on alkoxy modified Si(1 0 0), Si(1 1 3) and Si(1 1 5) surfaces}, language = {en} } @article{LopezBitzerHelleretal., author = {Lopez, A. and Bitzer, Thomas and Heller, Thomas and Richardson, Neville V.}, title = {Adsorption of maleic anhydride on Si(1 0 0)-2 x 1}, series = {Surface Science}, volume = {477}, journal = {Surface Science}, issn = {0039-6028}, pages = {219 -- 226}, language = {en} } @article{MikaloAppelHoffmannetal., author = {Mikalo, Ricardo Pablo and Appel, G{\"u}nter and Hoffmann, Patrick and Schmeißer, Dieter}, title = {Band Bending in Doped Conducting Polypyrrole Interaction with Silver}, language = {en} } @article{MikaloAppelSchmeisser, author = {Mikalo, Ricardo Pablo and Appel, G{\"u}nter and Schmeißer, Dieter}, title = {Conductivity of Silver exposed Polypyrrole Films}, language = {en} } @article{MikaloHoffmannBatcheloretal., author = {Mikalo, Ricardo Pablo and Hoffmann, Patrick and Batchelor, David R. and Schmeißer, Dieter and Lloyd Spetz, Anita and Lundstr{\"o}m, Ingemar}, title = {Comparison of HF and ozone treated SiC surfaces}, language = {en} } @article{SchmeisserMikaloHoffmannetal., author = {Schmeißer, Dieter and Mikalo, Ricardo Pablo and Hoffmann, Patrick and Seyller, Th. and Ley, L. and Lloyd Spetz, Anita}, title = {Oxide growth on SiC (0001) surfaces}, language = {en} } @article{SieberMantelSeylleretal., author = {Sieber, N. and Mantel, B. F. and Seyller, Th. and Ristein, J. and Ley, L. and Heller, Thomas and Batchelor, David R. and Schmeißer, Dieter}, title = {Electronic and chemical passivation of hexagonal 6H-SiC surfaces by hydrogen termination}, language = {en} } @inproceedings{BatchelorBergSimonetal., author = {Batchelor, David R. and Berg, A. and Simon, Sylvio and Wagner, Lothar and Viehweger, Bernd and Schmeißer, Dieter}, title = {Development of Joining Techniques through Pressforming of Steel and Aluminium}, language = {en} } @inproceedings{HenkelEllingDanzetal., author = {Henkel, Karsten and Elling, B. and Danz, R. and B{\"u}chtemann, A. and Straube, Oliver and Paloumpa, Ioanna and Yfantis, Alexandros D. and Schmeißer, Dieter}, title = {Piezoelectric polymer sensor for high pressures in forming machines}, language = {en} } @inproceedings{HuleaHoffmannBrinzaetal., author = {Hulea, Iulian and Hoffmann, Patrick and Brinza, Monica and Batchelor, David R. and Schmeißer, Dieter}, title = {The interface of friction-welded Al-Fe joints. ATB Metallurgy}, language = {en} } @inproceedings{JaegermannSchmeisser, author = {Jaegermann, Wolfram and Schmeißer, Dieter}, title = {Elementary Processes at Solid/Electrolyte Interfaces}, language = {en} } @inproceedings{YfantisTsiniarakisLabrakopoulosetal., author = {Yfantis, Alexandros D. and Tsiniarakis, G. and Labrakopoulos, S. and Yfantis, Alexandros D. and Schmeißer, Dieter}, title = {Conductive polymers of pyrrole as pigments in organic anticorrosive coatings-application for aluminium alloys}, language = {en} } @phdthesis{Schweizer, author = {Schweizer, Stefan}, title = {Dynamisches Verhalten von Silizium-Elektroden in Fluor-haltigen Elektrolyten}, publisher = {Brandenburgische Techn. Univ.}, address = {Cottbus}, url = {http://nbn-resolving.de/urn:nbn:de:kobv:co1-000000526}, language = {de} } @misc{LewerenzAggourMurrelletal., author = {Lewerenz, Hans-Joachim and Aggour, Mohammed and Murrell, Chris and Kanis, M. and Jungblut, H. and Jakubowicz, J. and Cox, P. A. and Campbell, S. A. and Hoffmann, Patrick and Schmeißer, Dieter}, title = {Initial stages of structure formation on silicon electrodes investigated by photoelectron spectroscopy using synchrotron radiation and in-situ atomic force microscopy}, series = {Journal of the Electrochemical Society}, volume = {150}, journal = {Journal of the Electrochemical Society}, number = {3}, issn = {1945-7111}, pages = {E185 -- E189}, abstract = {The surface condition of electrochemically H-terminated Si is compared with the situation at the first photocurrent maximum in dilute acidic ammonium fluoride solution where the divalent dissolution converts into the four-valence process. The first high spectral-resolution photoelectron spectroscopy data using synchrotron radiation of electrochemically hydrogenated Si are presented. A combined electrochemistry/ultrahigh vacuum surface analysis system, attached to the U 49/2 beamline at the synchrotron Bessy II, is used for photoelectron spectroscopy (PES) of the electrochemically conditioned samples. We analyze the Si 2p, O 1s, and F 1s core levels. A comparison of a density functional theory calculation of the reaction sequence, proposed in the dissolution model of Gerischer and co-workers, with the PES results supports this model. The anodized sample is characterized by a residual H coverage of 0.35 monolayers evidenced by a surface core level shift, Si-OH and Si-Fx species, F-, and a higher oxidized Si species. SiO2 is not found. Even on very well H-terminated surfaces, we find residual Si-OH complexes, fluoride and water. In situ atomic force microscopy shows a roughening with a root mean square roughness parameter of 2.6 nm. \%A92003 The Electrochemical Society. All rights reserved.}, language = {en} } @misc{HoffmannSchmeisserRotersetal., author = {Hoffmann, Patrick and Schmeißer, Dieter and Roters, G. and Nenyei, Z.}, title = {Non-destructive probing of interfacial oxidation and nitridation states at RTA Si-oxides}, series = {Thin Solid Films}, volume = {428}, journal = {Thin Solid Films}, number = {1-2}, issn = {0040-6090}, pages = {216 -- 222}, abstract = {The quality of the SiO2/Si interface is of crucial importance in the development and performance of sub 0.1 small mu, Greekm technologies. The knowledge of the chemical composition of the interface is an important piece of information in the preparation of ultra-thin oxides and high-k dielectrics, in order to maintain a high-quality interface and channel mobility. Here we report on investigations of 2 nm oxide layers formed by a RTP process under various gas mixtures containing N2O and NH3 at different concentrations. We studied the SiO2/Si(001) interface by a non-destructive depth profiling using Synchrotron radiation photoelectron spectroscopy. We determine the thickness of the oxide layer, the relative content and chemical state of nitrogen within the oxide, the thickness of the interface layer, and the relative abundance of Si intermediate oxides within. In all systems we find the thickness of the intermediate layer to be approximately 0.17 nm. The intermediate layer contains Si atoms in the oxidation states +1, +2 and +3 with similar relative abundance. Nitrogen is found predominantly close to the intermediate layer forming Si---N as well as Si---N---O bonds. Within the oxide there are only spurious nitrogen content with predominately Si---N---O bonds. Our method is able to detect a nitrogen content within the intermediate layer as low as approximately 5\%.}, language = {en} }