@misc{ReicheKittlerUebenseeetal., author = {Reiche, Manfred and Kittler, Martin and {\"U}bensee, Hartmut and Krause, Michael and Pippel, Eckhard}, title = {Trap-Assisted Tunneling on Extended Defects in Tunnel Field-Effect Transistors}, series = {Japanese Journal of Applied Physics}, volume = {53}, journal = {Japanese Journal of Applied Physics}, number = {4S, 04EC03}, issn = {1347-4065}, doi = {10.7567/JJAP.53.04EC03}, pages = {1 -- 6}, language = {en} } @misc{KittlerArguirovReicheetal., author = {Kittler, Martin and Arguirov, Tzanimir V. and Reiche, Manfred and Krause, Christoph and Mankovics, Daniel}, title = {About dislocation and oxygen related luminescence of Si around 0.8 eV}, series = {Physica Status Solidi C}, volume = {12}, journal = {Physica Status Solidi C}, number = {8}, issn = {1610-1642}, doi = {10.1002/pssc.201400231}, pages = {1077 -- 1080}, language = {en} } @misc{ReicheKittlerPippeletal., author = {Reiche, Manfred and Kittler, Martin and Pippel, Eckhard and Erfurth, Wilfried and Haehnel, Angelika and {\"U}bensee, Hartmut}, title = {Strain and carrier transport along dislocations}, series = {Physica Status Solidi C}, volume = {12}, journal = {Physica Status Solidi C}, number = {8}, issn = {1610-1642}, doi = {10.1002/pssc.201400298}, pages = {1071 -- 1076}, language = {en} } @misc{ReicheKittlerPippeletal., author = {Reiche, Manfred and Kittler, Martin and Pippel, Eckhard and Kosina, Hans and Lugstein, Alois and {\"U}bensee, Hartmut}, title = {Electronic Properties of Dislocations}, series = {Solid State Phenomena}, volume = {242}, journal = {Solid State Phenomena}, issn = {1012-0394}, doi = {10.4028/www.scientific.net/SSP.242.141}, pages = {141 -- 146}, language = {en} } @misc{SchwartzSaringArguirovetal., author = {Schwartz, Bernhard and Saring, Philipp and Arguirov, Tzanimir V. and Oehme, Michael and Kostecki, Konrad and Kasper, Erich and Schulze, J. and Kittler, Martin}, title = {Analysis of EL Emitted by LEDs on Si Substrates Containing GeSn/Ge Multi Quantum Wells as Active Layers}, series = {Solid State Phenomena}, volume = {242}, journal = {Solid State Phenomena}, issn = {1012-0394}, doi = {10.4028/www.scientific.net/SSP.242.361}, pages = {361 -- 367}, language = {en} } @article{VasylyevWegerBakalskietal., author = {Vasylyev, Andriy and Weger, Peter and Bakalski, Winfried and Simb{\"u}rger, Werner}, title = {Fully-integrated 32 dBm, 1.5-2.9 GHz SiGe-bipolar power amplifier using power-combining transformer}, language = {de} } @inproceedings{WipfSorgeWeger, author = {Wipf, Christian and Sorge, Roland and Weger, Peter}, title = {Hybrid cascode with an isolated NLDMOS and HBT for X-Band power amplifier applications}, series = {Silicon Monolithic Integrated Circuits in RF Systems (SiRF), IEEE 11th Topical Meeting on, Phoenix, AZ, 2011}, booktitle = {Silicon Monolithic Integrated Circuits in RF Systems (SiRF), IEEE 11th Topical Meeting on, Phoenix, AZ, 2011}, publisher = {IEEE}, address = {Piscataway}, isbn = {978-1-4244-8060-9}, doi = {10.1109/SIRF.2011.5719310}, pages = {121 -- 124}, abstract = {A cascode amplifier stage with an isolated NLDMOS and SiGe:C HBT was demonstrated. The main advantages of that circuitry concept are a reduced capacitive portion of the input impedance and a significantly increased power gain in comparison to a single NLDMOS amplifier stage. Additionally a more stable input impedance for different RF input power levels can be obtained. The stable and less capacitive input impedance simplifies the design of integrated impedance matching networks. In a first feasibility study a circuit with a NLDMOS gate width of 90 μm showed a maximum gain of 18 dB and a maximum output power of 10 dBm at 11 GHz. To the authors knowledge the circuit concept of a cascode amplifier containing a HBT and an isolated NLDMOS is presented for the first time.}, language = {en} } @inproceedings{DebskiLangmannWegeretal., author = {Debski, Wojciech Andrzej and Langmann, U. and Weger, Peter and Mayr, P. and Matz, R.}, title = {Keramische System-in-Package-Technologie f{\"u}r 5GHz-Transceivermodul}, series = {Deutsche IMAPS-Konferenz 2005, 10. - 11.10.05, M{\"u}nchen}, booktitle = {Deutsche IMAPS-Konferenz 2005, 10. - 11.10.05, M{\"u}nchen}, publisher = {IMAPS Deutschland}, address = {M{\"u}nchen}, language = {de} } @misc{KittlerArguirovReiche, author = {Kittler, Martin and Arguirov, Tzanimir V. and Reiche, Manfred}, title = {Light-emitting semiconductor structure and optoelectronic component therefrom}, language = {de} } @incollection{WinklerBorngraeberHeinemann, author = {Winkler, W. and Borngr{\"a}ber, J. and Heinemann, B.}, title = {60GHz and 76GHz Oscillators in µm SiGe:C BiCMOS}, language = {en} } @inproceedings{BakalskiScholtzVasylyevetal., author = {Bakalski, Winfried and Scholtz, A. L. and Vasylyev, Andriy and Weger, Peter and Simb{\"u}rger, Werner and Th{\"u}ringer, R. and Wohlmuth, H.-D.}, title = {A Fully Integrated 7-18 GHz Power Amplifier with On-Chip Output Balun in 75 GHz-fT SiGe-Bipolar}, series = {Proceedings of the Bipolar/BiCMOS Circuits and Technology Meeting, Toulouse, France, 29 - 20 Sept. 2003, IEEE}, booktitle = {Proceedings of the Bipolar/BiCMOS Circuits and Technology Meeting, Toulouse, France, 29 - 20 Sept. 2003, IEEE}, publisher = {IEEE Operations Center}, address = {Piscataway, NJ}, isbn = {0-7803-7800-8}, pages = {61 -- 66}, language = {en} } @inproceedings{BakalskiVasylyevSimbuergeretal., author = {Bakalski, Winfried and Vasylyev, Andriy and Simb{\"u}rger, Werner and Scholtz, A. L. and Th{\"u}ringer, R.}, title = {A fully integrated 5.3 GHz, 2.4 V, 0.3 W SiGe-bipolar power amplifier with 50 Ohm output}, series = {Proceedings of the 29th European Solid-State Circuits Conference, Estoril, Portugal, 16 - 18 September 2003}, booktitle = {Proceedings of the 29th European Solid-State Circuits Conference, Estoril, Portugal, 16 - 18 September 2003}, isbn = {0-7803-7995-0}, pages = {561 -- 564}, language = {en} } @misc{SchwartzArguirovKittleretal., author = {Schwartz, Bernhard and Arguirov, Tzanimir V. and Kittler, Martin and Oehme, Michael and Kostecki, Konrad and Kasper, Erich and Schulze, J{\"o}rg}, title = {Comparison of EL emitted by LEDs on Si substrates containing Ge and Ge/GeSn MQW as active layers}, series = {Silicon Photonics X, 9-12 February 2015, San Francisco, California, United States}, journal = {Silicon Photonics X, 9-12 February 2015, San Francisco, California, United States}, publisher = {International Society for Optics and Photonics}, doi = {10.1117/12.2080816}, language = {en} } @article{SolomkoWeger, author = {Solomko, Valentyn A. and Weger, Peter}, title = {Monolithically integrated ?? frequency synthesiser with distributed reference spurs}, language = {en} } @article{DebskiWeger, author = {Debski, Wojciech Andrzej and Weger, Peter}, title = {A Monolithically Integrated 23-24 GHz Tuned Down-Converter in 0.13 µm CMOS}, language = {en} } @article{DebskiWeger, author = {Debski, Wojciech Andrzej and Weger, Peter}, title = {5-6 GHz Low-Power, High Linearity Differential CMOS LNA with Robust ESD Protection}, language = {en} } @article{SolomkoWeger, author = {Solomko, Valentyn A. and Weger, Peter}, title = {11 GHz CMOS frequency synthesiser}, language = {en} } @article{VasylyevWegerBakalski, author = {Vasylyev, Andriy and Weger, Peter and Bakalski, Winfried}, title = {17 GHz 50-60 mW Power Amplifiers in 0.13 um standard CMOS}, language = {en} } @article{VasylyevWegerSimbuerger, author = {Vasylyev, Andriy and Weger, Peter and Simb{\"u}rger, Werner}, title = {Ultra broadband 20.5-31 GHz monolithically integrated CMOS power amplifier}, language = {en} } @article{BakalskiVasylyev, author = {Bakalski, Winfried and Vasylyev, Andriy}, title = {A fully integrated 5.3 GHz, 2.4 V, 0.3 W SiGe-bipolar power amplifier with 50 Ohm output}, language = {en} } @article{BakalskiWegerIlkovetal., author = {Bakalski, Winfried and Weger, Peter and Ilkov, N. and Scholtz, A. L. and Dernovsek, N. and Matz, R. and Simb{\"u}rger, Werner}, title = {A 5-6.5GHz LTCC Power Amplifier Module with 0.3W at 2.4V in Si-bipolar}, language = {en} } @phdthesis{Solomko, author = {Solomko, Valentyn A.}, title = {Monolithically integrated Sigma-Delta Frequency Synthesizers in 0.13 µm CMOS}, url = {http://nbn-resolving.de/urn:nbn:de:kobv:co1-opus-4656}, language = {en} } @phdthesis{Debski, author = {Debski, Wojciech Andrzej}, title = {Multi-band adaptive WLAN receivers in 0.13 µm CMOS}, url = {http://nbn-resolving.de/urn:nbn:de:kobv:co1-opus-3689}, language = {en} } @phdthesis{Vasylyev, author = {Vasylyev, Andriy}, title = {Integrated RF power amplifier design in silicon based technologies}, url = {http://nbn-resolving.de/urn:nbn:de:kobv:co1-opus-202}, language = {en} } @periodical{OPUS4-15027, title = {Physica Status Solidi : C}, volume = {12}, number = {8}, editor = {Seibt, Michael and Kittler, Martin}, doi = {10.1002/pssc.201570099}, language = {en} } @misc{SchwartzOehmeKosteckietal., author = {Schwartz, Bernhard and Oehme, Michael and Kostecki, Konrad and Widmann, Daniel and Gollhofer, Martin and K{\"o}rner, Roman and Bechler, Stefan and Fischer, Inga Anita and Wendav, Torsten and Kasper, Erich and Schulze, J{\"o}rg and Kittler, Martin}, title = {Electroluminescence of GeSn/Ge MQW LEDs on Si substrate}, series = {Optics Letters}, volume = {40}, journal = {Optics Letters}, number = {13}, doi = {10.1364/OL40.003209}, pages = {3209 -- 3212}, language = {en} } @misc{ReicheKittlerSchmelzetal., author = {Reiche, Manfred and Kittler, Martin and Schmelz, Matthias and Stolz, Ronny and Pippel, Eckhard and {\"U}bensee, Hartmut and Kermann, M. and Ortlepp, Thomas}, title = {Single-Electron Transitions In One-Dimensional Native Nanostructures}, series = {Journal of Physics: Conference Series}, volume = {568}, journal = {Journal of Physics: Conference Series}, issn = {1742-6588}, doi = {10.1088/1742-6596/568/5/052024}, pages = {052024}, language = {en} }