@inproceedings{IlkovDernovsekBakalskietal., author = {Ilkov, N. and Dernovsek, O. and Bakalski, Winfried and Weger, Peter and Matz, R. and Simb{\"u}rger, Werner}, title = {A 5 to 6.5 GHz LTCC Power Amplifier Module}, series = {Proceedings of the 36th International Symposium on Microelectronics (IMAPS), Boston, USA, 16 - 20 Nov. 2003, IEEE}, booktitle = {Proceedings of the 36th International Symposium on Microelectronics (IMAPS), Boston, USA, 16 - 20 Nov. 2003, IEEE}, publisher = {IMAPS}, address = {Washington, DC}, isbn = {0-930815-71-8}, language = {en} } @inproceedings{MeckingDebski, author = {Mecking, S. and Debski, Wojciech Andrzej}, title = {A 0.35µm CMOS 1.9mA VCO-Core with Off-Chip Inductance on LTCC for System-in-a-Package Solutions of a 5-GHz-WLAN Transceiver}, language = {en} } @inproceedings{VasylyevWeger, author = {Vasylyev, Andriy and Weger, Peter}, title = {A Monolithic 2.4 GHz, 0.13 um CMOS Power Amplifier with 28 dBm Output Power and PAE at 1.2 V Supply}, language = {en} } @inproceedings{VasylyevKaellBakalskietal., author = {Vasylyev, Andriy and K{\"a}ll, Marcus and Bakalski, Winfried and Schmid, Alfons and Simb{\"u}rger, Werner and Kitlinski, Krzysztof}, title = {A 4.8-6 GHz IEEE 802.11a WLAN SiGe-Bipolar Power Amplifier with On-chip Output Matching}, series = {Conference proceedings, 35th European Microwave Conference, Tuesday 4th, Wednesday 5th and Thursday 6th October 2005, Paris, France, part of 8th European Microwave Week (EuMW)], Bd. 3}, booktitle = {Conference proceedings, 35th European Microwave Conference, Tuesday 4th, Wednesday 5th and Thursday 6th October 2005, Paris, France, part of 8th European Microwave Week (EuMW)], Bd. 3}, publisher = {Horizon House Publ.}, address = {London}, pages = {1427 -- 1431}, language = {en} } @misc{SolomkoWeger, author = {Solomko, Valentyn A. and Weger, Peter}, title = {A Fully Integrated 3.3-3.8-GHz Power Amplifier With Autotransformer Balun}, language = {en} } @inproceedings{MeshcheriakovSolomkoWeger, author = {Meshcheriakov, Ievgenii and Solomko, Valentyn A. and Weger, Peter}, title = {Fully monolithically integrated X-band power amplifier without external matching}, series = {Conference on Ph.D. Research in Microelectronics and Electronics (PRIME) 2010, Berlin, Institute of Technology}, booktitle = {Conference on Ph.D. Research in Microelectronics and Electronics (PRIME) 2010, Berlin, Institute of Technology}, publisher = {IEEE}, address = {Piscataway, NJ}, isbn = {978-1-424-47905-4}, pages = {1 -- 4}, language = {en} } @misc{GerlichWeger, author = {Gerlich, Stefan and Weger, Peter}, title = {A Narrow-band 8.7 GHz SiGe HBT LNA with a Passive Frequency Selective Feedback}, series = {Frequenz}, volume = {66}, journal = {Frequenz}, number = {7-8}, issn = {0016-1136}, doi = {10.1515/freq-2012-0037}, pages = {183 -- 188}, abstract = {This paper presents a low noise amplifier (LNA) with differential output using a passive frequency selective feedback. The introduced feedback stabilizes the amplifier at lower frequencies and improves the gain in the desired frequency band. The LNA consists of two stages. Additionally, a buffer at the output is added for measurements. The amplifier was implemented in a 0.35 μm SiGe technology. For measurements the LNA was bonded to a substrate. A peak gain of 28.1 dB and a minimum noise figure of 2.2 dB at a supply voltage of 3 V were achieved.}, language = {en} } @misc{GerlichWeger, author = {Gerlich, Stefan and Weger, Peter}, title = {Highly Efficient Packaged 11-13 GHz Power Amplifier in SiGe-Technology With 37.3\% of PAE}, series = {IEEE Microwave and Wireless Components Letters}, volume = {23}, journal = {IEEE Microwave and Wireless Components Letters}, number = {10}, issn = {1531-1309}, doi = {10.1109/LMWC.2013.2278285}, pages = {539 -- 541}, abstract = {A power amplifier for a frequency range of 11-13 GHz that is incorporated in 0.35 μm SiGe-technology is presented in this letter. The two-stage push-pull amplifier uses monolithically integrated transformers for input and interstage matching and a monolithically integrated modified LC-balun as an output-matching network. For stabilization purposes and gain improvement in the operating frequency range a passive frequency selective feedback in parallel to the base-collector was introduced. The power amplifier is mounted on a 7 × 7 mm VQFN package. From a single 1.8 V voltage supply, the amplifier has a power-added efficiency of greater than 30\% from 11.2 to 13 GHz with a maximum of 37.3\% at 12.5 GHz. The maximum output power is 23.4 dBm (saturation), as measured in the continuous mode.}, language = {en} } @misc{SteffensBeckerAmkreutzetal., author = {Steffens, S. and Becker, C. and Amkreutz, Daniel and Klossek, Andr{\´e} and Kittler, Martin and Chen, Y.-Y. and Schnegg, Alexander and Klingsporn, Max and Abou-Ras, Daniel and Lips, Klaus and Rech, Bernd}, title = {Impact of Dislocations and Dangling Bond Defects on The Electrical Performance of Crystalline Silicon Thin Films}, series = {Applied Physics Letters}, volume = {105}, journal = {Applied Physics Letters}, number = {2}, issn = {1077-3118}, doi = {10.1063/1.4890625}, pages = {022108}, language = {en} } @inproceedings{ReicheKittlerKrauseetal., author = {Reiche, Manfred and Kittler, Martin and Krause, M. and {\"U}bensee, Hartmut}, title = {Carrier Transport on Dislocations}, series = {International Conference on Defects in Semiconductors 2013, proceedings of the 27th International Conference on Defects in Semiconductors, ICDS-2013, Bologna, Italy, 21-26 July 2013}, booktitle = {International Conference on Defects in Semiconductors 2013, proceedings of the 27th International Conference on Defects in Semiconductors, ICDS-2013, Bologna, Italy, 21-26 July 2013}, editor = {Cavallini, Anna and Estreicher, Stefan K.}, publisher = {AIP Publishing}, address = {Melville, New York}, isbn = {978-0-7354-1215-6}, doi = {10.1063/1.4865599}, language = {en} } @misc{ReicheKittlerUebenseeetal., author = {Reiche, Manfred and Kittler, Martin and {\"U}bensee, Hartmut and Pippel, Eckhard and Hopfe, Sigrid}, title = {Dislocations as Native Nanostructures - Electronic Properties}, series = {Advances in Nano Research}, volume = {2}, journal = {Advances in Nano Research}, number = {1}, issn = {2287-2388}, doi = {10.12989/anr.2014.2.1.001}, pages = {1 -- 14}, language = {en} } @misc{ReicheKittlerErfurthetal., author = {Reiche, Manfred and Kittler, Martin and Erfurth, Wilfried and Pippel, Eckhard and Sklarek, Kornelia and Blumtritt, Horst and Haehnel, Angelika and {\"U}bensee, Hartmut}, title = {On the Electronic Properties of a Single Dislocation}, series = {Journal of Applied Physics}, volume = {115}, journal = {Journal of Applied Physics}, number = {19}, issn = {1089-7550}, doi = {10.1063/1.4876265}, pages = {194303}, language = {en} } @misc{ReicheKittlerUebenseeetal., author = {Reiche, Manfred and Kittler, Martin and {\"U}bensee, Hartmut and Pippel, Eckhard and Erfurth, Wilfried}, title = {Single Dislocations as Nanostructure Devices: Physics and Applications}, series = {ECS Transactions}, volume = {64}, journal = {ECS Transactions}, number = {11}, doi = {10.1149/06411.0267ecst}, pages = {267 -- 281}, language = {en} } @misc{SchadeMchedlidzeKittleretal., author = {Schade, Martin and Mchedlidze, Teimuraz and Kittler, Martin and Leipner, Hartmut S.}, title = {Light Induced Crystallization of an Amorphous Silicon Film Embedded Between Silicon Oxide Layers}, series = {Physica Status Solidi B}, volume = {251}, journal = {Physica Status Solidi B}, number = {2}, doi = {10.1002/pssb.201349143}, pages = {439 -- 445}, language = {en} } @misc{SchwartzKlossekKittleretal., author = {Schwartz, Bernhard and Klossek, Andre and Kittler, Martin and Oehme, Michael and Kasper, Erich and Schulze, J{\"o}rg}, title = {Electroluminescence of Germanium-LEDs on Silicon}, series = {Physica Status Solidi C}, volume = {11}, journal = {Physica Status Solidi C}, number = {11-12}, doi = {10.1002/pssc.201400056}, pages = {1686 -- 1691}, language = {en} } @inproceedings{ArguirovKittlerOehmeetal., author = {Arguirov, Tzanimir V. and Kittler, Martin and Oehme, Michael and Abrosimov, Nikolay V. and Vyvenko, Oleg F. and Kasper, Erich and Schulze, J{\"o}rg}, title = {Luminescence from Germanium and Germanium on Silicon}, series = {Gettering and defect engineering in semiconductor technology XV, selected papers from the 15th Gettering and Defect Engineering in Semiconductor Technology Conference, September 22 - 27, 2013, Oxford, UK}, booktitle = {Gettering and defect engineering in semiconductor technology XV, selected papers from the 15th Gettering and Defect Engineering in Semiconductor Technology Conference, September 22 - 27, 2013, Oxford, UK}, publisher = {Trans Tech Publ.}, address = {Durnten-Zurich [u.a.]}, issn = {1662-9779}, doi = {10.4028/www.scientific.net/SSP.205-206.383}, pages = {383 -- 393}, language = {en} } @inproceedings{KittlerReicheKrause, author = {Kittler, Martin and Reiche, Manfred and Krause, Hans-Michael}, title = {Charge Carrier Transport Along Grain Boundaries in Silicon}, series = {Gettering and defect engineering in semiconductor technology XV, selected papers from the 15th Gettering and Defect Engineering in Semiconductor Technology Conference, September 22 - 27, 2013, Oxford, UK}, booktitle = {Gettering and defect engineering in semiconductor technology XV, selected papers from the 15th Gettering and Defect Engineering in Semiconductor Technology Conference, September 22 - 27, 2013, Oxford, UK}, publisher = {Trans Tech Publ.}, address = {Durnten-Zurich [u.a.]}, doi = {10.4028/www.scientific.net/SSP.205-206.293}, pages = {293 -- 298}, language = {en} } @inproceedings{KrauseArguirovMankovicsetal., author = {Krause, Christoph and Arguirov, Tzanimir V. and Mankovics, Daniel and Krause, Hans-Michael and Kittler, Martin}, title = {Properties of D3-Like (0,93 eV) Luminescence in Solar Grade Silicon}, series = {Gettering and defect engineering in semiconductor technology XV, selected papers from the 15th Gettering and Defect Engineering in Semiconductor Technology Conference, September 22 - 27, 2013, Oxford, UK}, booktitle = {Gettering and defect engineering in semiconductor technology XV, selected papers from the 15th Gettering and Defect Engineering in Semiconductor Technology Conference, September 22 - 27, 2013, Oxford, UK}, publisher = {Trans Tech Publ.}, address = {Durnten-Zurich [u.a.]}, doi = {10.4028/www.scientific.net/SSP.205-206.83}, pages = {83 -- 88}, language = {en} } @misc{OehmeKosteckiArguirovetal., author = {Oehme, Michael and Kostecki, Konrad and Arguirov, Tzanimir V. and Mussler, Gregor and Ye, Kaiheng and Gollhofer, Martin and Schmid, Marc and Kaschel, Mathias and K{\"o}rner, Roman and Kittler, Martin and Buca, Dan and Kasper, Erich and Schulze, J{\"o}rg}, title = {GeSn Heterojunction LEDs on Si Substrates}, series = {IEEE Photonics Technology Letters}, volume = {26}, journal = {IEEE Photonics Technology Letters}, number = {2}, issn = {1041-1135}, doi = {10.1109/LPT.2013.2291571}, pages = {187 -- 189}, language = {en} } @misc{OehmeWidmannKosteckietal., author = {Oehme, Michael and Widmann, Daniel and Kostecki, Konrad and Zaumseil, Peter and Schwartz, Bernhard and Gollhofer, Martin and K{\"o}rner, Roman and Bechler, Stefan and Kittler, Martin and Kasper, Erich and Schulze, J{\"o}rg}, title = {GeSn/Ge Multi Quantum Well Photodetectors on Si Substrates}, series = {Optics Letters}, volume = {39}, journal = {Optics Letters}, number = {16}, issn = {1539-4794}, doi = {10.1364/OL.39.004711}, pages = {4711 -- 4714}, language = {en} }