@inproceedings{WipfSorgeWeger, author = {Wipf, Christian and Sorge, Roland and Weger, Peter}, title = {Hybrid cascode with an isolated NLDMOS and HBT for X-Band power amplifier applications}, series = {Silicon Monolithic Integrated Circuits in RF Systems (SiRF), IEEE 11th Topical Meeting on, Phoenix, AZ, 2011}, booktitle = {Silicon Monolithic Integrated Circuits in RF Systems (SiRF), IEEE 11th Topical Meeting on, Phoenix, AZ, 2011}, publisher = {IEEE}, address = {Piscataway}, isbn = {978-1-4244-8060-9}, doi = {10.1109/SIRF.2011.5719310}, pages = {121 -- 124}, abstract = {A cascode amplifier stage with an isolated NLDMOS and SiGe:C HBT was demonstrated. The main advantages of that circuitry concept are a reduced capacitive portion of the input impedance and a significantly increased power gain in comparison to a single NLDMOS amplifier stage. Additionally a more stable input impedance for different RF input power levels can be obtained. The stable and less capacitive input impedance simplifies the design of integrated impedance matching networks. In a first feasibility study a circuit with a NLDMOS gate width of 90 μm showed a maximum gain of 18 dB and a maximum output power of 10 dBm at 11 GHz. To the authors knowledge the circuit concept of a cascode amplifier containing a HBT and an isolated NLDMOS is presented for the first time.}, language = {en} } @misc{GerlichWeger, author = {Gerlich, Stefan and Weger, Peter}, title = {Highly Efficient Packaged 11-13 GHz Power Amplifier in SiGe-Technology With 37.3\% of PAE}, series = {IEEE Microwave and Wireless Components Letters}, volume = {23}, journal = {IEEE Microwave and Wireless Components Letters}, number = {10}, issn = {1531-1309}, doi = {10.1109/LMWC.2013.2278285}, pages = {539 -- 541}, abstract = {A power amplifier for a frequency range of 11-13 GHz that is incorporated in 0.35 μm SiGe-technology is presented in this letter. The two-stage push-pull amplifier uses monolithically integrated transformers for input and interstage matching and a monolithically integrated modified LC-balun as an output-matching network. For stabilization purposes and gain improvement in the operating frequency range a passive frequency selective feedback in parallel to the base-collector was introduced. The power amplifier is mounted on a 7 × 7 mm VQFN package. From a single 1.8 V voltage supply, the amplifier has a power-added efficiency of greater than 30\% from 11.2 to 13 GHz with a maximum of 37.3\% at 12.5 GHz. The maximum output power is 23.4 dBm (saturation), as measured in the continuous mode.}, language = {en} } @misc{SteffensBeckerAmkreutzetal., author = {Steffens, S. and Becker, C. and Amkreutz, Daniel and Klossek, Andr{\´e} and Kittler, Martin and Chen, Y.-Y. and Schnegg, Alexander and Klingsporn, Max and Abou-Ras, Daniel and Lips, Klaus and Rech, Bernd}, title = {Impact of Dislocations and Dangling Bond Defects on The Electrical Performance of Crystalline Silicon Thin Films}, series = {Applied Physics Letters}, volume = {105}, journal = {Applied Physics Letters}, number = {2}, issn = {1077-3118}, doi = {10.1063/1.4890625}, pages = {022108}, language = {en} } @inproceedings{ReicheKittlerKrauseetal., author = {Reiche, Manfred and Kittler, Martin and Krause, M. and {\"U}bensee, Hartmut}, title = {Carrier Transport on Dislocations}, series = {International Conference on Defects in Semiconductors 2013, proceedings of the 27th International Conference on Defects in Semiconductors, ICDS-2013, Bologna, Italy, 21-26 July 2013}, booktitle = {International Conference on Defects in Semiconductors 2013, proceedings of the 27th International Conference on Defects in Semiconductors, ICDS-2013, Bologna, Italy, 21-26 July 2013}, editor = {Cavallini, Anna and Estreicher, Stefan K.}, publisher = {AIP Publishing}, address = {Melville, New York}, isbn = {978-0-7354-1215-6}, doi = {10.1063/1.4865599}, language = {en} } @misc{ReicheKittlerUebenseeetal., author = {Reiche, Manfred and Kittler, Martin and {\"U}bensee, Hartmut and Pippel, Eckhard and Hopfe, Sigrid}, title = {Dislocations as Native Nanostructures - Electronic Properties}, series = {Advances in Nano Research}, volume = {2}, journal = {Advances in Nano Research}, number = {1}, issn = {2287-2388}, doi = {10.12989/anr.2014.2.1.001}, pages = {1 -- 14}, language = {en} } @misc{ReicheKittlerErfurthetal., author = {Reiche, Manfred and Kittler, Martin and Erfurth, Wilfried and Pippel, Eckhard and Sklarek, Kornelia and Blumtritt, Horst and Haehnel, Angelika and {\"U}bensee, Hartmut}, title = {On the Electronic Properties of a Single Dislocation}, series = {Journal of Applied Physics}, volume = {115}, journal = {Journal of Applied Physics}, number = {19}, issn = {1089-7550}, doi = {10.1063/1.4876265}, pages = {194303}, language = {en} } @misc{ReicheKittlerUebenseeetal., author = {Reiche, Manfred and Kittler, Martin and {\"U}bensee, Hartmut and Pippel, Eckhard and Erfurth, Wilfried}, title = {Single Dislocations as Nanostructure Devices: Physics and Applications}, series = {ECS Transactions}, volume = {64}, journal = {ECS Transactions}, number = {11}, doi = {10.1149/06411.0267ecst}, pages = {267 -- 281}, language = {en} } @misc{ReicheKittlerSchmelzetal., author = {Reiche, Manfred and Kittler, Martin and Schmelz, Matthias and Stolz, Ronny and Pippel, Eckhard and {\"U}bensee, Hartmut and Kermann, M. and Ortlepp, Thomas}, title = {Single-Electron Transitions In One-Dimensional Native Nanostructures}, series = {Journal of Physics: Conference Series}, volume = {568}, journal = {Journal of Physics: Conference Series}, issn = {1742-6588}, doi = {10.1088/1742-6596/568/5/052024}, pages = {052024}, language = {en} } @misc{SchadeMchedlidzeKittleretal., author = {Schade, Martin and Mchedlidze, Teimuraz and Kittler, Martin and Leipner, Hartmut S.}, title = {Light Induced Crystallization of an Amorphous Silicon Film Embedded Between Silicon Oxide Layers}, series = {Physica Status Solidi B}, volume = {251}, journal = {Physica Status Solidi B}, number = {2}, doi = {10.1002/pssb.201349143}, pages = {439 -- 445}, language = {en} } @misc{SchwartzKlossekKittleretal., author = {Schwartz, Bernhard and Klossek, Andre and Kittler, Martin and Oehme, Michael and Kasper, Erich and Schulze, J{\"o}rg}, title = {Electroluminescence of Germanium-LEDs on Silicon}, series = {Physica Status Solidi C}, volume = {11}, journal = {Physica Status Solidi C}, number = {11-12}, doi = {10.1002/pssc.201400056}, pages = {1686 -- 1691}, language = {en} } @inproceedings{ArguirovKittlerOehmeetal., author = {Arguirov, Tzanimir V. and Kittler, Martin and Oehme, Michael and Abrosimov, Nikolay V. and Vyvenko, Oleg F. and Kasper, Erich and Schulze, J{\"o}rg}, title = {Luminescence from Germanium and Germanium on Silicon}, series = {Gettering and defect engineering in semiconductor technology XV, selected papers from the 15th Gettering and Defect Engineering in Semiconductor Technology Conference, September 22 - 27, 2013, Oxford, UK}, booktitle = {Gettering and defect engineering in semiconductor technology XV, selected papers from the 15th Gettering and Defect Engineering in Semiconductor Technology Conference, September 22 - 27, 2013, Oxford, UK}, publisher = {Trans Tech Publ.}, address = {Durnten-Zurich [u.a.]}, issn = {1662-9779}, doi = {10.4028/www.scientific.net/SSP.205-206.383}, pages = {383 -- 393}, language = {en} } @inproceedings{KittlerReicheKrause, author = {Kittler, Martin and Reiche, Manfred and Krause, Hans-Michael}, title = {Charge Carrier Transport Along Grain Boundaries in Silicon}, series = {Gettering and defect engineering in semiconductor technology XV, selected papers from the 15th Gettering and Defect Engineering in Semiconductor Technology Conference, September 22 - 27, 2013, Oxford, UK}, booktitle = {Gettering and defect engineering in semiconductor technology XV, selected papers from the 15th Gettering and Defect Engineering in Semiconductor Technology Conference, September 22 - 27, 2013, Oxford, UK}, publisher = {Trans Tech Publ.}, address = {Durnten-Zurich [u.a.]}, doi = {10.4028/www.scientific.net/SSP.205-206.293}, pages = {293 -- 298}, language = {en} } @inproceedings{KrauseArguirovMankovicsetal., author = {Krause, Christoph and Arguirov, Tzanimir V. and Mankovics, Daniel and Krause, Hans-Michael and Kittler, Martin}, title = {Properties of D3-Like (0,93 eV) Luminescence in Solar Grade Silicon}, series = {Gettering and defect engineering in semiconductor technology XV, selected papers from the 15th Gettering and Defect Engineering in Semiconductor Technology Conference, September 22 - 27, 2013, Oxford, UK}, booktitle = {Gettering and defect engineering in semiconductor technology XV, selected papers from the 15th Gettering and Defect Engineering in Semiconductor Technology Conference, September 22 - 27, 2013, Oxford, UK}, publisher = {Trans Tech Publ.}, address = {Durnten-Zurich [u.a.]}, doi = {10.4028/www.scientific.net/SSP.205-206.83}, pages = {83 -- 88}, language = {en} } @misc{OehmeKosteckiArguirovetal., author = {Oehme, Michael and Kostecki, Konrad and Arguirov, Tzanimir V. and Mussler, Gregor and Ye, Kaiheng and Gollhofer, Martin and Schmid, Marc and Kaschel, Mathias and K{\"o}rner, Roman and Kittler, Martin and Buca, Dan and Kasper, Erich and Schulze, J{\"o}rg}, title = {GeSn Heterojunction LEDs on Si Substrates}, series = {IEEE Photonics Technology Letters}, volume = {26}, journal = {IEEE Photonics Technology Letters}, number = {2}, issn = {1041-1135}, doi = {10.1109/LPT.2013.2291571}, pages = {187 -- 189}, language = {en} } @misc{OehmeWidmannKosteckietal., author = {Oehme, Michael and Widmann, Daniel and Kostecki, Konrad and Zaumseil, Peter and Schwartz, Bernhard and Gollhofer, Martin and K{\"o}rner, Roman and Bechler, Stefan and Kittler, Martin and Kasper, Erich and Schulze, J{\"o}rg}, title = {GeSn/Ge Multi Quantum Well Photodetectors on Si Substrates}, series = {Optics Letters}, volume = {39}, journal = {Optics Letters}, number = {16}, issn = {1539-4794}, doi = {10.1364/OL.39.004711}, pages = {4711 -- 4714}, language = {en} } @misc{ReicheKittlerUebenseeetal., author = {Reiche, Manfred and Kittler, Martin and {\"U}bensee, Hartmut and Krause, Michael and Pippel, Eckhard}, title = {Trap-Assisted Tunneling on Extended Defects in Tunnel Field-Effect Transistors}, series = {Japanese Journal of Applied Physics}, volume = {53}, journal = {Japanese Journal of Applied Physics}, number = {4S, 04EC03}, issn = {1347-4065}, doi = {10.7567/JJAP.53.04EC03}, pages = {1 -- 6}, language = {en} } @misc{SchwartzArguirovKittleretal., author = {Schwartz, Bernhard and Arguirov, Tzanimir V. and Kittler, Martin and Oehme, Michael and Kostecki, Konrad and Kasper, Erich and Schulze, J{\"o}rg}, title = {Comparison of EL emitted by LEDs on Si substrates containing Ge and Ge/GeSn MQW as active layers}, series = {Silicon Photonics X, 9-12 February 2015, San Francisco, California, United States}, journal = {Silicon Photonics X, 9-12 February 2015, San Francisco, California, United States}, publisher = {International Society for Optics and Photonics}, doi = {10.1117/12.2080816}, language = {en} } @misc{SchwartzOehmeKosteckietal., author = {Schwartz, Bernhard and Oehme, Michael and Kostecki, Konrad and Widmann, Daniel and Gollhofer, Martin and K{\"o}rner, Roman and Bechler, Stefan and Fischer, Inga Anita and Wendav, Torsten and Kasper, Erich and Schulze, J{\"o}rg and Kittler, Martin}, title = {Electroluminescence of GeSn/Ge MQW LEDs on Si substrate}, series = {Optics Letters}, volume = {40}, journal = {Optics Letters}, number = {13}, doi = {10.1364/OL40.003209}, pages = {3209 -- 3212}, language = {en} } @misc{KittlerArguirovReicheetal., author = {Kittler, Martin and Arguirov, Tzanimir V. and Reiche, Manfred and Krause, Christoph and Mankovics, Daniel}, title = {About dislocation and oxygen related luminescence of Si around 0.8 eV}, series = {Physica Status Solidi C}, volume = {12}, journal = {Physica Status Solidi C}, number = {8}, issn = {1610-1642}, doi = {10.1002/pssc.201400231}, pages = {1077 -- 1080}, language = {en} } @misc{ReicheKittlerPippeletal., author = {Reiche, Manfred and Kittler, Martin and Pippel, Eckhard and Erfurth, Wilfried and Haehnel, Angelika and {\"U}bensee, Hartmut}, title = {Strain and carrier transport along dislocations}, series = {Physica Status Solidi C}, volume = {12}, journal = {Physica Status Solidi C}, number = {8}, issn = {1610-1642}, doi = {10.1002/pssc.201400298}, pages = {1071 -- 1076}, language = {en} }