@misc{MuellerHenkelMandaletal., author = {M{\"u}ller, Klaus and Henkel, Karsten and Mandal, Dipankar and Seime, Bernd and Paloumpa, Ioanna and Schmeißer, Dieter}, title = {Spin coated organic ferroelectric films for non volatile memories}, language = {en} } @misc{KovalLazarevaMuelleretal., author = {Koval, Yuri and Lazareva, I. and M{\"u}ller, P. and M{\"u}ller, Klaus and Henkel, Karsten and Friedrich, Daniel}, title = {Field effect transistors on graphitized polymer surfaces}, language = {en} } @misc{TallaridaAdelmannDelabieetal., author = {Tallarida, Massimo and Adelmann, Christoph and Delabie, Annelies and Elshocht, Sven van and Caymax, Matty and Schmeißer, Dieter}, title = {Surface chemistry and Fermi level movement during the self-cleaning of GaAs by trimethyl-aluminum}, series = {Applied physics letters}, volume = {99}, journal = {Applied physics letters}, number = {4}, issn = {1077-3118}, doi = {10.1063/1.3615784}, pages = {042906-1 -- 042906-3}, language = {en} } @misc{SchwarzkopfDirsyteDevietal., author = {Schwarzkopf, Jutta and Dirsyte, R. and Devi, A. and Kwasniewski, A. and Schmidbauer, M. and Wagner, Gerd and Michling, Marcel and Schmeißer, Dieter and Fornari, Robert}, title = {Influence of Na on the structure of Bi4Ti3O12 films deposited by liquid-delivery spin MOCVD}, series = {Thin solid films}, volume = {519}, journal = {Thin solid films}, number = {17}, issn = {0040-6090}, pages = {5754 -- 5759}, language = {en} } @misc{TallaridaWeisheitKolaneketal., author = {Tallarida, Massimo and Weisheit, Martin and Kolanek, Krzysztof and Michling, Marcel and Engelmann, Hans-J{\"u}rgen and Schmeißer, Dieter}, title = {Atomic layer deposition of nanolaminate oxide films on Si}, series = {Journal of Nanoparticle Research}, volume = {13}, journal = {Journal of Nanoparticle Research}, number = {11}, doi = {10.1007/s11051-011-0319-x}, pages = {5975 -- 5983}, language = {en} } @misc{DudekLupinaKozłowskietal., author = {Dudek, Piotr T. and Lupina, Grzegorz and Kozłowski, Grzegorz and Zaumseil, Peter and Bauer, Jakob and Fursenko, Oksana and Dabrowski, Jarek Marek and Schmidt, R. and Lippert, Gunther and M{\"u}ssig, Hans-Joachim and Schr{\"o}der, Thomas and Schmeißer, Dieter and Zschech, Ehrenfried}, title = {Atomic-scale engineering of future high-k dynamic random access memory dielectrics: The example of partial Hf substitution by Ti in BaHfO3}, series = {Journal of Vacuum Science and Technology / B}, volume = {29}, journal = {Journal of Vacuum Science and Technology / B}, number = {1}, issn = {2166-2754}, language = {en} } @misc{JanowitzSchererMohamedetal., author = {Janowitz, Christoph and Scherer, Valentina and Mohamed, Mansour and Krapf, Alica and Dwelk, Helmut and Manzke, Recardo and Galazka, Zbigniew and Uecker, Reinhard and Irmscher, Klaus and Fornari, Robert and Michling, Marcel and Schmeißer, Dieter}, title = {Experimental electronic structure of In2O3 and Ga2O3}, series = {New Journal of Physics}, volume = {13}, journal = {New Journal of Physics}, number = {8}, issn = {1367-2630}, pages = {085014}, language = {en} } @misc{MandalHenkelSchmeisser, author = {Mandal, Dipankar and Henkel, Karsten and Schmeißer, Dieter}, title = {Comment on "Preparation and Characterization of Silver-Poly(vinylidene fluoride) Nanocomposites:Formation of Piezoelectric Polymorph of Poly(vinylidene fluoride"}, language = {en} } @misc{KolanekTallaridaMichlingetal., author = {Kolanek, Krzysztof and Tallarida, Massimo and Michling, Marcel and Karavaev, Konstantin and Schmeißer, Dieter}, title = {Atomic layer deposition reactor for fabrication of metal oxides}, language = {en} } @misc{TallaridaKukliMichlingetal., author = {Tallarida, Massimo and Kukli, Kaupo and Michling, Marcel and Ritala, Mikko and Leskel{\"a}, Markku and Schmeißer, Dieter}, title = {Substrate Reactivity Effects in the Atomic Layer Deposition of Aluminum Oxide from Trimethylaluminum on Ruthenium}, series = {Chemistry of Materials}, volume = {23}, journal = {Chemistry of Materials}, number = {13}, issn = {0897-4756}, pages = {3159 -- 3168}, language = {en} } @misc{TallaridaFriedrichStaedteretal., author = {Tallarida, Massimo and Friedrich, Daniel and St{\"a}dter, Matthias and Michling, Marcel and Schmeißer, Dieter}, title = {Growth of TiO2 with Thermal and Plasma Enhanced Atomic Layer Deposition}, series = {Journal of Nanoscience and Nanotechnology}, volume = {11}, journal = {Journal of Nanoscience and Nanotechnology}, number = {9}, issn = {1533-4880}, pages = {8049 -- 8053}, language = {en} } @inproceedings{GehrlichOhsiekKleinetal., author = {Gehrlich, Lukas and Ohsiek, Susanne and Klein, C. and Geiß, M. and Friedemann, Michael and K{\"u}cher, Peter and Schmeißer, Dieter}, title = {Ultrathin TaN/Ta barrier modifications to fullfill next technology node requirements}, series = {2011 IEEE International Interconnect Technology Conference and 2011 Materials for Advanced Metallization (IITC/MAM 2011), Dresden, Germany, 8 - 12 May 2011}, booktitle = {2011 IEEE International Interconnect Technology Conference and 2011 Materials for Advanced Metallization (IITC/MAM 2011), Dresden, Germany, 8 - 12 May 2011}, publisher = {IEEE}, address = {Piscataway, NJ}, isbn = {978-1-4577-0503-8}, doi = {10.1109/IITC.2011.5940322}, pages = {82 -- 84}, language = {en} } @misc{FriedrichHenkelRichteretal., author = {Friedrich, Daniel and Henkel, Karsten and Richter, Matthias and Schmeißer, Dieter}, title = {Fullerenol as probed by Synchrotron X-Ray Photoemission and Absorption Spectroscopy}, language = {en} } @misc{KukliKemellPuukilainenetal., author = {Kukli, Kaupo and Kemell, Marianna and Puukilainen, Esa and Aarik, Jaan and Aidla, Aleks and Sajavaara, Timo and Laitinen, Mikko and Tallarida, Massimo and Sundqvist, Jonas and Ritala, Mikko and Leskel{\"a}, Markku}, title = {Atomic Layer Deposition of Ruthenium Films from (Ethylcyclopentadienyl)(pyrrolyl)ruthenium and Oxygen}, series = {Journal of the Electrochemical Society}, volume = {158}, journal = {Journal of the Electrochemical Society}, number = {3}, issn = {0013-4651}, doi = {10.1149/1.3533387}, pages = {D158 -- D165}, abstract = {Ru films were grown by atomic layer deposition in the temperature range of 275-350 degrees C using (ethylcyclopentadienyl)(pyrrolyl)ruthenium and air or oxygen as precursors on HF-etched Si, SiO(2), ZrO(2), and TiN substrates. Conformal growth was examined on three-dimensional silicon substrates with 20: 1 aspect ratio. ZrO(2) promoted the nucleation of Ru most efficiently compared to other substrates, but the films roughened quickly on ZrO(2) with increasing film thickness. The minimum number of cycles required to form continuous and conductive metal layers could be decreased by increasing the length of the oxygen pulse. In order to obtain well-conducting Ru films growth to thicknesses of at least 8-10 nm on any surface was necessary. Resistivities in the ranges of 30-60 and 14-16 mu Omega . cm were achieved for 4-6 and 10-15 nm thick films, respectively. Delamination became an issue in the Ru films grown to thicknesses about 10 nm and higher.}, language = {en} } @inproceedings{MaiDauderstaedtPahneretal., author = {Mai, Andreas and Dauderst{\"a}dt, Ulrike and Pahner, D. and Krellmann, M. and Schmeißer, Dieter and Wagner, M.}, title = {In situ determination of laser induced degradation of micro-mirror arrays}, series = {International Students and Young Scientists Workshop Photonics and Microsystems, Cottbus, Germany, 8 - 10 June 2011}, booktitle = {International Students and Young Scientists Workshop Photonics and Microsystems, Cottbus, Germany, 8 - 10 June 2011}, publisher = {IEEE}, address = {Piscataway, NJ}, isbn = {978-1-4577-1651-5}, doi = {10.1109/STYSW.2011.6155850}, pages = {84 -- 88}, abstract = {The Fraunhofer Institute for Photonic Microsystems (Fraunhofer IPMS) develops spatial light modulators (SLMs) based on arrays of tiltable micro mirrors on a semiconductor chip. Typical applications are pattern generation for deepUV-laser mask writing or structured illumination in microscopy. Development and optimization of such SLMs requires detailed knowledge of the device behaviour under operating conditions. Here, the flatness of each single mirror effects the image resolution and contrast of the generated pattern and is amongst others a characteristic property of SLMs. In this context a surface topography measurement under laser exposure (in situ) was designed. The interferometric setup uses the phase-shift principle and allows a resolution in z-direction in the single-digit nanometer range. During irradiation with UV-laser light at 248 nm (KrF) and energy densities of up to 20 mJ/cm2 the change in single micro-mirrors topography was detected in situ. Measurementswith varying pulse energies were carried out to identify an impacton the device performance. In general, the setup is neither limited to a specific illumination wavelength nor to micro-mirrors as structures under test.}, language = {en} } @phdthesis{Kraatz, author = {Kraatz, Matthias}, title = {Studying the effect of Cu microstructure on electromigration reliability using statistical simulation}, pages = {XVI, 141 S.}, language = {en} } @phdthesis{Karavaev, author = {Karavaev, Konstantin}, title = {In-situ Atomic Layer Deposition growth of Hf-oxide}, url = {http://nbn-resolving.de/urn:nbn:de:kobv:co1-opus-22617}, pages = {VIII, 57 Bl.}, abstract = {We have grown HfO2 on Si(001) by atomic layer deposition (ALD) using HfCl4, TEMAHf, TDMAHf and H2O as precursors. The early stages of the ALD were investigated with high-resolution photoelectron spectroscopy and x-ray absorption spectroscopy. We observed the changes occurring in the Si2p, O1s, Hf4f, Hf4d, and Cl2p (for HfCl4 experiment) core level lines after each ALD cycle up to the complete formation of two layers of HfO2. The investigation was carried out in-situ giving the possibility to determine the properties of the grown film after every ALD cycle or even after a half cycle. This work focused on the advantages of the in-situ approach in comparison to ex-situ experiments. The study provides to follow the evolution of the important properties of HfO2: contamination level, density and stoichiometry, and influence of the experimental parameters to the interface layer formation during ALD. Our investigation shows that the in-situ XPS approach for ALD gives much more information than ex-situ experiments.}, language = {en} } @phdthesis{Dudek, author = {Dudek, Piotr T.}, title = {Atomic scale engineering of HfO2-based dielectrics for future DRAM applications}, url = {http://nbn-resolving.de/urn:nbn:de:kobv:co1-opus-22775}, pages = {106}, abstract = {Modern dielectrics in combination with appropriate metal electrodes have a great potential to solve many difficulties associated with continuing miniaturization process in the microelectronic industry. One significant branch of microelectronics incorporates dynamic random access memory (DRAM) market. The DRAM devices scaled for over 35 years starting from 4 kb density to several Gb nowadays. The scaling process led to the dielectric material thickness reduction, resulting in higher leakage current density, and as a consequence higher power consumption. As a possible solution for this problem, alternative dielectric materials with improved electrical and material science parameters were intensively studied by many research groups. The higher dielectric constant allows the use of physically thicker layers with high capacitance but strongly reduced leakage current density. This work focused on deposition and characterization of thin insulating layers. The material engineering process was based on Si cleanroom compatible HfO2 thin films deposited on TiN metal electrodes. A combined materials science and dielectric characterization study showed that Ba added HfO2 (BaHfO3) films and Ti added BaHfO3 (BaHf0.5Ti0.5O3) layers are promising candidates for future generation of state of the art DRAMs. In especial a strong increase of the dielectric permittivity k was achieved for thin films of cubic BaHfO3 (k~38) and BaHf0.5Ti0.5O3 (k~90) with respect to monoclinic HfO2 (k~19). Meanwhile the CET values scaled down to 1 nm for BaHfO3 and ~0.8 nm for BaHf0.5Ti0.5O3 with respect to HfO2 (CET=1.5 nm). The Hf4+ ions substitution in BaHfO3 by Ti4+ ions led to a significant decrease of thermal budget from 900°C for BaHfO3 to 700°C for BaHf0.5Ti0.5O3. Future studies need to focus on the use of appropriate metal electrodes (high work function) and on film deposition process (homogeneity) for better current leakage control.}, language = {en} } @inproceedings{FriedrichKovalMuelleretal., author = {Friedrich, Daniel and Koval, Yuri and M{\"u}ller, Paul and Schmeißer, Dieter}, title = {Electronic structure of thin spin-coated polyimide layers}, series = {Verhandlungen der Deutschen Physikalischen Gesellschaft, Reihe 6, Bd. 46}, booktitle = {Verhandlungen der Deutschen Physikalischen Gesellschaft, Reihe 6, Bd. 46}, publisher = {Deutsche Physikalische Gesellschaft}, address = {Bad Honnef}, issn = {0420-0195}, pages = {S. 311}, abstract = {The conductivity of polyimide layers can be modified by several orders of magnitude by ion beam radiation. In order to understand the electronic structure of the pure polyimide before ion beam modification we focus in our preliminary experiments on spectroscopic investigations of thin as prepared polyimide films. The films were made by spin coating from a PMDA/ODA solution with subsequent vacuum annealing at 350°C. The layer thickness can be controlled by changing the concentration of PMDA/ODA in the solution realizing a thickness down to 3.5nm. For the characterization of the as prepared thin polyimide films the techniques NEXAFS, ResPES, XPS and CIS were applied at the U49/2-PGM2 beam line of Bessy II, Berlin. Our data including the valence band, core levels and absorption spectrum were compared with theoretical LCAO calculations. Based on these results we are able to attribute all spectral features to the specific atomic bonds in the molecule.}, language = {en} } @inproceedings{HoffmannbeckRichterStaedteretal., author = {Hoffmannbeck, David and Richter, Matthias and St{\"a}dter, Matthias and Paloumpa, Ioanna and Henkel, Karsten and Schmeißer, Dieter}, title = {Spectroscopic and microscopic characterization of potential catalysts for the hydrogenation of CO2}, series = {Verhandlungen der Deutschen Physikalischen Gesellschaft, Reihe 6, Bd. 46}, booktitle = {Verhandlungen der Deutschen Physikalischen Gesellschaft, Reihe 6, Bd. 46}, publisher = {Deutsche Physikalische Gesellschaft}, address = {Bad Honnef}, issn = {0420-0195}, pages = {S. 483}, abstract = {The reduction of CO2 emissions is a general demand of the society in order to avoid irreversible climate changes. We are investigating potential catalysts for the hydrogenation of CO2 in particular for its application in the so called oxyfuel combustion process. In order to understand the catalytic behavior of the investigated materials we use the techniques X-Ray Photoemission (XPS) and -absorption (XAS) Spectroscopy as well as X-Ray Diffraction (XRD) and Scanning Electron Microscopy (SEM). The prospective of our work is to figure out the electronic and structural properties of the material and to optimize proper catalysts or design new ones for best catalytic activity. Beside the spectro-microscopic investigations the catalysts are tested under Sabatier reaction conditions in terms of activity, stability and sensitivity against poisoning. In our preliminary work we constructed a Sabatier reactor system with analytical parts based on infrared absorption and mass spectroscopy modules. First spectroscopic and catalytic results achieved on a commercially available Ru/Al2O3 catalyst will be presented.}, language = {en} }