@misc{OguzZhouGlasaueretal., author = {Oguz, Ozgur S. and Zhou, Zhehua and Glasauer, Stefan and Wollherr, Dirk}, title = {An Inverse Optimal Control Approach to Explain Human Arm Reaching Control Based on Multiple Internal Models}, series = {Scientific Reports}, volume = {8}, journal = {Scientific Reports}, issn = {2045-2322}, doi = {10.1038/s41598-018-23792-7}, pages = {17}, language = {en} } @misc{XieBirowskaFunketal., author = {Xie, Yufang and Birowska, Magdalena and Funk, Hannes S. and Fischer, Inga Anita and Schwarz, Daniel and Schulze, J{\"o}rg and Zeng, Yu-Jia and Helm, Manfred and Zhou, Shengqiang and Prucnal, Slawomir}, title = {Tuning of Curie temperature in Mn5Ge3 films}, series = {Journal of Applied Physics}, volume = {131}, journal = {Journal of Applied Physics}, issn = {1089-7550}, doi = {10.1063/5.0066717}, pages = {105102-1 -- 105102-8}, language = {en} } @misc{XieLiBegezaetal., author = {Xie, Yufang and Li, Zichao and Begeza, Viktor and Funk, Hannes S. and Fischer, Inga Anita and Zeng, Yu-Jia and Helm, Manfred and Zhou, Shengqiang and Prucnal, Slawomir}, title = {Influence of fabrication parameters on the magnetic and structural properties of Mn5Ge3}, series = {Semiconductor Science and Technology}, volume = {37}, journal = {Semiconductor Science and Technology}, number = {6}, issn = {1361-6641}, doi = {10.1088/1361-6641/ac6689}, pages = {1 -- 8}, abstract = {Mn5Ge3 is a ferromagnetic material with the high potential for spintronic applications. Usually, it is grown by conventional solid state reaction of manganese with germanium using molecular beam epitaxy. Here, we report the structural and magnetic properties of Mn5Ge3 layers grown on Ge substrates using ultrafast-solid phase epitaxy (SPE) method. We investigate the influence of the substrate orientation, Mn layer thickness and annealing parameters on the crystallographic orientation and magnetization of Mn5Ge3. It is shown that after millisecond range SPE, Mn5Ge3 films always have a preferred (100) orientation whether grown on Ge (001) or (111) substrates, which determines the orientation of the magnetization easy axis lying in the film plane along c axis independent of the layer thickness. The Curie temperature of Mn5Ge3 weakly depends on fabrication parameters.}, language = {en} } @misc{SteuerLiedkeButterlingetal., author = {Steuer, O. and Liedke, Maciej O. and Butterling, M. and Schwarz, D. and Schulze, J. and Li, Z. and Wagner, A. and Fischer, Inga Anita and H{\"u}bner, R. and Zhou, S.}, title = {Evolution of point defects in pulsed-laser-melted Ge1-xSnx probed by positron annihilation lifetime spectroscopy}, series = {Journal of Physics: Condensed Matter}, volume = {36}, journal = {Journal of Physics: Condensed Matter}, number = {8}, issn = {0953-8984}, doi = {10.1088/1361-648X/ad0a10}, pages = {1 -- 11}, abstract = {Direct-band-gap Germanium-Tin alloys (Ge1-xSnx) with high carrier mobilities are promising materials for nano- and optoelectronics. The concentration of open volume defects in the alloy, such as Sn and Ge vacancies, influences the final device performance. In this article, we present an evaluation of the point defects in molecular-beam-epitaxy grown Ge1-xSnx films treated by post-growth nanosecond-range pulsed laser melting (PLM). Doppler broadening - variable energy positron annihilation spectroscopy and variable energy positron annihilation lifetime spectroscopy are used to investigate the defect nanostructure in the Ge1-xSnx films exposed to increasing laser energy density. The experimental results, supported with ATomic SUPerposition calculations, evidence that after PLM, the average size of the open volume defects increases, which represents a raise in concentration of vacancy agglomerations, but the overall defect density is reduced as a function of the PLM fluence. At the same time, the positron annihilation spectroscopy analysis provides information about dislocations and Ge vacancies decorated by Sn atoms. Moreover, it is shown that the PLM reduces the strain in the layer, while dislocations are responsible for trapping of Sn and formation of small Sn-rich-clusters.}, language = {en} }