@misc{ZoellnerRichardChahineetal., author = {Z{\"o}llner, Marvin Hartwig and Richard, Marie-Ingrid and Chahine, Gilbert A. and Zaumseil, Peter and Reich, Christian and Capellini, Giovanni and Montalenti, Francesco and Marzegalli, Anna and Xie, Ya-Hong and Sch{\"u}lli, Tobias U. and H{\"a}berlen, Maik and Storck, Peter and Schroeder, Thomas}, title = {Imaging structure and composition homogeneity of 300 mm SiGe virtual substrates for advanced CMOS applications by scanning X-ray diffraction microscopy}, series = {ACS Applied Materials and Interfaces}, volume = {7}, journal = {ACS Applied Materials and Interfaces}, number = {17}, issn = {1944-8252}, doi = {10.1021/am508968b}, pages = {9031 -- 9037}, language = {en} } @misc{RichardZoellnerChahineetal., author = {Richard, Marie-Ingrid and Z{\"o}llner, Marvin Hartwig and Chahine, Gilbert A. and Zaumseil, Peter and Capellini, Giovanni and H{\"a}berlen, Maik and Storck, Peter and Sch{\"u}lli, Tobias U. and Schr{\"o}der, Thomas}, title = {Structural Mapping of Functional Ge Layers Grown on Graded SiGe Buffers for sub-10 nm CMOS Applications Using Advanced X-ray Nano-Diffraction}, series = {ACS Applied Materials and Interfaces}, volume = {7}, journal = {ACS Applied Materials and Interfaces}, number = {48}, issn = {1944-8244}, doi = {10.1021/acsami.5b08645}, pages = {26696 -- 26700}, language = {en} } @inproceedings{SeifarthWilkeWalczyketal., author = {Seifarth, Olaf and Wilke, A. and Walczyk, Christian and Dabrowski, Jarek Marek and Zaumseil, Peter and Schmeißer, Dieter and M{\"u}ssig, Hans-Joachim and Schroeder, Thomas}, title = {Band gap and electronic structure determination with XAS and UPS of thin Pr-oxide films on Si(111)}, series = {Proceedings of 15th Workshop on Dielectrics in Microelectronics, Bad Saarow, 23 - 25 June 2008, Bad Saarow (Berlin)}, booktitle = {Proceedings of 15th Workshop on Dielectrics in Microelectronics, Bad Saarow, 23 - 25 June 2008, Bad Saarow (Berlin)}, pages = {285 -- 286}, language = {en} } @inproceedings{LippertDabrowskiCostinaetal., author = {Lippert, Gunther and Dabrowski, Jarek Marek and Costina, Ioan and Lupina, Grzegorz and Ratzke, Markus and Zaumseil, Peter and M{\"u}ssig, Hans-Joachim}, title = {Morphology and Composition of Praseodymium Based High-k Materials and Their Relevance to Dielectric Properties of Thin-Films}, language = {en} } @misc{DudekLupinaKozłowskietal., author = {Dudek, Piotr T. and Lupina, Grzegorz and Kozłowski, Grzegorz and Zaumseil, Peter and Bauer, Jakob and Fursenko, Oksana and Dabrowski, Jarek Marek and Schmidt, R. and Lippert, Gunther and M{\"u}ssig, Hans-Joachim and Schr{\"o}der, Thomas and Schmeißer, Dieter and Zschech, Ehrenfried}, title = {Atomic-scale engineering of future high-k dynamic random access memory dielectrics: The example of partial Hf substitution by Ti in BaHfO3}, series = {Journal of Vacuum Science and Technology / B}, volume = {29}, journal = {Journal of Vacuum Science and Technology / B}, number = {1}, issn = {2166-2754}, language = {en} } @misc{ZaumseilYamamotoBaueretal., author = {Zaumseil, Peter and Yamamoto, Yuji and Bauer, Joachim and Schubert, Markus Andreas and Matejova, Jana and Kozłowski, Grzegorz and Schr{\"o}der, Thomas and Tillack, Bernd}, title = {Preparation and Characterization of Ge Epitaxially Grown on Nano-structured Periodic Si Pillars and Bars on Si(001) Substrate}, series = {Thin Solid Films}, volume = {520}, journal = {Thin Solid Films}, number = {8}, issn = {0040-6090}, doi = {10.1016/j.tsf.2011.10.178}, pages = {3240 -- 3244}, language = {en} } @misc{CapelliniDeSetaZaumseiletal., author = {Capellini, Giovanni and De Seta, Monica and Zaumseil, Peter and Kozłowski, Grzegorz and Schroeder, Thomas}, title = {High temperature x-ray diffraction measurements on Ge/Si(001) heterostructures: a study on the residual tensile strain}, series = {Journal of Applied Physics}, volume = {111}, journal = {Journal of Applied Physics}, number = {7}, issn = {0021-8979}, doi = {10.1063/1.3702443}, language = {en} } @misc{KozłowskiZaumseilSchubertetal., author = {Kozłowski, Grzegorz and Zaumseil, Peter and Schubert, Markus Andreas and Yamamoto, Yuji and Sch{\"u}lli, Tobias U. and Tillack, Bernd and Schroeder, Thomas}, title = {Growth and relaxation processes in Ge nanocrystals on free-standing Si(001) nanopillars}, series = {Nanotechnology}, volume = {23}, journal = {Nanotechnology}, number = {11}, issn = {0957-4484}, doi = {10.1088/0957-4484/23/11/115704}, pages = {115704 -- 115711}, language = {en} } @misc{ZoellnerDabrowskiZaumseiletal., author = {Z{\"o}llner, Marvin Hartwig and Dabrowski, Jarek Marek and Zaumseil, Peter and Giussani, A. and Schubert, Markus Andreas and Lupina, Grzegorz and Wilkens, Henrik and Wollschl{\"a}ger, Joachim and B{\"a}umer, Marcus and Reichling, M. and Schr{\"o}der, Thomas}, title = {On the unusual stacking behavior of twin-free, type B oriented CeO2(111) films on hexagonal Pr2O3(0001) / Si(111) systems}, series = {Physical Review}, volume = {85}, journal = {Physical Review}, number = {3}, issn = {1098-0121}, doi = {10.1103/PhysRevB.85.035302}, pages = {035302 -- 035311}, language = {en} } @misc{SkibitzkiHatamiYamamotoetal., author = {Skibitzki, Oliver and Hatami, Fariba and Yamamoto, Yuji and Zaumseil, Peter and Trampert, A. and Schubert, Markus Andreas and Tillack, Bernd and Schroeder, Thomas}, title = {GaP collector development for SiGe HBT performance increase: A heterostructure growth study}, series = {Journal of Applied Physics}, volume = {111}, journal = {Journal of Applied Physics}, number = {7}, issn = {0021-8979}, doi = {10.1063/1.3701583}, pages = {073515 -- 073515-9}, language = {en} } @misc{ZoellnerZaumseilWilkensetal., author = {Z{\"o}llner, Marvin Hartwig and Zaumseil, Peter and Wilkens, Henrik and Gevers, Sebastian and Wollschl{\"a}ger, Joachim and B{\"a}umer, Marcus and Xie, Ya-Hong and Niu, Gang and Schroeder, Thomas}, title = {Stoichiometry-structure correlation of epitaxial Ce1-xPrxO2-δ (x = 0-1) thin films on Si(111)}, series = {Journal of Crystal Growth}, volume = {355}, journal = {Journal of Crystal Growth}, number = {1}, issn = {0022-0248}, pages = {159 -- 165}, language = {en} } @misc{ZaumseilKozłowskiYamamotoetal., author = {Zaumseil, Peter and Kozłowski, Grzegorz and Yamamoto, Yuji and Bauer, J. and Schubert, Markus Andreas and Sch{\"u}lli, Tobias U. and Tillack, Bernd and Schroeder, Thomas}, title = {Compliant Si nanostructures on SOI for Ge nanoheteroepitaxy - a case study for lattice mismatched semiconductor integration on Si(001)}, series = {Journal of Applied Physics}, volume = {112}, journal = {Journal of Applied Physics}, number = {4}, issn = {0021-8979}, pages = {043506 -- 043511}, language = {en} } @misc{ZaumseilKozłowskiSchubertetal., author = {Zaumseil, Peter and Kozłowski, Grzegorz and Schubert, Markus Andreas and Yamamoto, Yuji and Bauer, J. and Sch{\"u}lli, Tobias U. and Tillack, Bernd and Schroeder, Thomas}, title = {The role of SiGe buffer in growth and relaxation of Ge on free-standing Si(001) nanopillars}, series = {Nanotechnology}, volume = {23}, journal = {Nanotechnology}, number = {35}, issn = {1361-6528}, pages = {355706}, language = {en} } @misc{BauerYamamotoZaumseiletal., author = {Bauer, J. and Yamamoto, Yuji and Zaumseil, Peter and Fursenko, Oksana and Schulz, K. and Kozłowski, Grzegorz and Schubert, Markus Andreas and Schroeder, Thomas and Tillack, Bernd}, title = {Nanostructured Silicon for Ge Nanoheteroepitaxy}, series = {Microelectronics Engineering}, volume = {97}, journal = {Microelectronics Engineering}, issn = {0167-9317}, pages = {169 -- 172}, language = {en} } @misc{ZoellnerNiuJhangetal., author = {Z{\"o}llner, Marvin Hartwig and Niu, Gang and Jhang, Jin-Hao and Sch{\"a}fer, Andreas and Zaumseil, Peter and B{\"a}umer, Marcus and Schr{\"o}der, Thomas}, title = {Temperature dependent reduction of epitaxial Ce1-xPrxO2-δ (x = 0-1) thin films on Si(111): A combined TPD, XRD, XPS and Raman study}, series = {Journal of Physical Chemistry : C}, volume = {117}, journal = {Journal of Physical Chemistry : C}, number = {47}, issn = {1932-7455}, doi = {10.1021/jp4082867}, pages = {24851 -- 24857}, language = {en} } @misc{ZaumseilKozłowskiYamamotoetal., author = {Zaumseil, Peter and Kozłowski, Grzegorz and Yamamoto, Yuji and Schubert, Markus Andreas and Schroeder, Thomas}, title = {X-ray Characterization of Ge Dots Epitaxially Grown on Nano-structured Si Islands on SOI Substrates}, series = {Journal of Applied Crystallography}, volume = {46}, journal = {Journal of Applied Crystallography}, number = {4}, issn = {0021-8898}, pages = {868 -- 873}, language = {en} } @misc{NiuZaumseilSchubertetal., author = {Niu, Gang and Zaumseil, Peter and Schubert, Markus Andreas and Z{\"o}llner, Marvin Hartwig and Dabrowski, Jarek Marek and Schroeder, Thomas}, title = {Lattice-matched single crystalline ternary PrxY2-xO3 films on SrO-passivated Si (001): interface engineering and crystallography tailoring}, series = {Applied Physics Letters}, volume = {102}, journal = {Applied Physics Letters}, pages = {011906-1 -- 011906-5}, language = {en} } @misc{NiuZoellnerZaumseiletal., author = {Niu, Gang and Z{\"o}llner, Marvin Hartwig and Zaumseil, Peter and Pouliopoulos, A. and d'Acapito, F. and Schr{\"o}der, Thomas and Boscherini, F.}, title = {X-ray diffraction and extended X-ray absorption fine structure study of epitaxial mixed ternary bixbyite PrxY2-xO3 (x=0-2) films on Si (111)}, series = {Journal of Applied Physics}, volume = {113}, journal = {Journal of Applied Physics}, number = {4}, issn = {0021-8979}, pages = {043504 -- 043506}, language = {en} } @inproceedings{SeifarthWalczykLupinaetal., author = {Seifarth, Olaf and Walczyk, Christian and Lupina, Grzegorz and Zaumseil, Peter and Schmeißer, Dieter and M{\"u}ssig, Hans-Joachim and Schroeder, Thomas}, title = {The electronic band diagram of thin PrO2(111) / Pr-silicate buffers on Si(111) and its relevance to dielectric properties}, series = {Verhandlungen der Deutschen Physikalischen Gesellschaft, Reihe 6, Bd. 44}, booktitle = {Verhandlungen der Deutschen Physikalischen Gesellschaft, Reihe 6, Bd. 44}, publisher = {Deutsche Physikalische Gesellschaft}, address = {Bad Honnef}, issn = {0420-0195}, pages = {S. 136}, abstract = {Thin dielectric buffers of cubic PrO2(111) on Si(111) are ideally suited to integrate Ge onto Si by moderating the lattice mismatch between the materials. The leakage current across this dielectric buffer is strongly influenced by the electronic band diagram and defects inside the band gap. Therefore, we measured the band offsets, band gaps and defect positions by means of synchrotron radiation based photoemission spectroscopy techniques (XPS and XAS) with special emphasis on the Pr-silicate interface. In a next step we compare the spectroscopic data with information from dielectric studies, based on temperature dependent leakage current studies. We observe a close relation between dielectric properties and the electronic structure.}, language = {en} } @misc{OehmeWidmannKosteckietal., author = {Oehme, Michael and Widmann, Daniel and Kostecki, Konrad and Zaumseil, Peter and Schwartz, Bernhard and Gollhofer, Martin and K{\"o}rner, Roman and Bechler, Stefan and Kittler, Martin and Kasper, Erich and Schulze, J{\"o}rg}, title = {GeSn/Ge Multi Quantum Well Photodetectors on Si Substrates}, series = {Optics Letters}, volume = {39}, journal = {Optics Letters}, number = {16}, issn = {1539-4794}, doi = {10.1364/OL.39.004711}, pages = {4711 -- 4714}, language = {en} } @misc{ZaumseilYamamotoSchubertetal., author = {Zaumseil, Peter and Yamamoto, Yuji and Schubert, Markus Andreas and Schr{\"o}der, Thomas and Tillack, Bernd}, title = {Heteroepitaxial Growth of Ge on compliant strained nano-structured Si lines and dots on (001) SOI substrates}, series = {Thin Solid Films}, volume = {557}, journal = {Thin Solid Films}, issn = {0040-6090}, pages = {50 -- 54}, language = {en} } @misc{DiGaspareSabbaghDeSetaetal., author = {Di Gaspare, L. and Sabbagh, D. and De Seta, Monica and Sodo, A. and Wirths, S. and Buca, Dan and Zaumseil, Peter and Schroeder, Thomas and Capellini, Giovanni}, title = {A very low temperature epi-cleaning process for Ge / GeSn heterostructures}, series = {Journal of Applied Physics}, volume = {117}, journal = {Journal of Applied Physics}, issn = {1089-7550}, doi = {10.1063/1.4906616}, pages = {045306}, language = {en} }