@misc{OehmeWidmannKosteckietal., author = {Oehme, Michael and Widmann, Daniel and Kostecki, Konrad and Zaumseil, Peter and Schwartz, Bernhard and Gollhofer, Martin and K{\"o}rner, Roman and Bechler, Stefan and Kittler, Martin and Kasper, Erich and Schulze, J{\"o}rg}, title = {GeSn/Ge Multi Quantum Well Photodetectors on Si Substrates}, series = {Optics Letters}, volume = {39}, journal = {Optics Letters}, number = {16}, issn = {1539-4794}, doi = {10.1364/OL.39.004711}, pages = {4711 -- 4714}, language = {en} } @misc{DiGaspareSabbaghDeSetaetal., author = {Di Gaspare, L. and Sabbagh, D. and De Seta, Monica and Sodo, A. and Wirths, S. and Buca, Dan and Zaumseil, Peter and Schroeder, Thomas and Capellini, Giovanni}, title = {A very low temperature epi-cleaning process for Ge / GeSn heterostructures}, series = {Journal of Applied Physics}, volume = {117}, journal = {Journal of Applied Physics}, issn = {1089-7550}, doi = {10.1063/1.4906616}, pages = {045306}, language = {en} } @misc{TaokaAsanoYamahaetal., author = {Taoka, Noriyuki and Asano, Takanori and Yamaha, Takashi and Terashima, Tatsuya and Nakatsuka, Osamu and Costina, Ioan and Zaumseil, Peter and Capellini, Giovanni and Zaima, Shigeaki and Schroeder, Thomas}, title = {Non-uniform depth distributions of Sn concentration induced by Sn migration and desorption during GeSnSi layer formation}, series = {Applied Physics Letters}, volume = {106}, journal = {Applied Physics Letters}, issn = {1077-3118}, doi = {10.1063/1.4908121}, pages = {061107-1 -- 061107-5}, language = {en} } @misc{WirthsTroitschMussleretal., author = {Wirths, S. and Troitsch, R. and Mussler, G. and Stoica, T. and Hartmann, J.-M. and Zaumseil, Peter and Schroeder, Thomas and Mantl, Siegfried and Buca, Dan}, title = {Ternary and Quaternary Ni(Si)GeSn Contact Formation for highly strained Ge p- and n-MOSFETs}, series = {Semiconductor Science and Technology}, volume = {30}, journal = {Semiconductor Science and Technology}, number = {5}, issn = {0268-1242}, doi = {10.1088/0268-1242/30/5/055003}, pages = {055003}, language = {en} } @misc{NiuCapelliniLupinaetal., author = {Niu, Gang and Capellini, Giovanni and Lupina, Grzegorz and Niermann, Tore and Salvalaglio, Marco and Marzegalli, Anna and Schubert, Markus Andreas and Zaumseil, Peter and Krause, Hans-Michael and Skibitzki, Oliver and Lehmann, Michael and Montalenti, Francesco and Xie, Ya-Hong and Schr{\"o}der, Thomas}, title = {Photodetection in hybrid single layer graphene/fully coherent Ge island nanostructures selectively grown on Si nano-tip patterns}, series = {ACS Applied Materials and Interfaces}, volume = {8}, journal = {ACS Applied Materials and Interfaces}, number = {3}, issn = {1944-8252}, pages = {2017 -- 2026}, language = {en} } @misc{ZaumseilSchubertYamamotoetal., author = {Zaumseil, Peter and Schubert, Markus Andreas and Yamamoto, Yuji and Skibitzki, Oliver and Capellini, Giovanni and Schr{\"o}der, Thomas}, title = {Misfit dislocation-free epitaxial growth of SiGe on compliant nanostructured Silicon}, series = {Solid State Phenomena}, volume = {242}, journal = {Solid State Phenomena}, issn = {1662-9779}, doi = {10.4028/www.scientific.net/SSP.242.402}, pages = {402 -- 407}, language = {en} } @misc{TaokaCapelliniDrieschetal., author = {Taoka, Noriyuki and Capellini, Giovanni and Driesch, Nils von den and Buca, Dan and Zaumseil, Peter and Schubert, Markus Andreas and Klesse, Wolfgang Matthias and Montanari, Michele and Schr{\"o}der, Thomas}, title = {Sn Migration Control at High Temperature Due to High Deposition Speed for Forming High Quality GeSn Layer}, series = {Applied Physics Express}, volume = {9}, journal = {Applied Physics Express}, number = {3}, issn = {1882-0786}, doi = {10.7567/APEX.9.031201}, pages = {031201}, language = {en} } @misc{NiuCapelliniSchubertetal., author = {Niu, Gang and Capellini, Giovanni and Schubert, Markus Andreas and Niermann, Tore and Zaumseil, Peter and Katzer, Jens and Krause, Hans-Michael and Skibitzki, Oliver and Lehmann, Michael and Xie, Ya-Hong and K{\"a}nel, Hans von and Schr{\"o}der, Thomas}, title = {Dislocation-free Ge nano-crystals via pattern dependent selective Ge heteroepitaxy on Si nano-tip wafers}, series = {Scientific Reports}, volume = {6}, journal = {Scientific Reports}, issn = {2045-2322}, doi = {10.1038/srep22709}, pages = {22709}, language = {en} } @misc{EngelhardKlempBehringeretal., author = {Engelhard, M. and Klemp, C. and Behringer, M. and Rudolph, A. and Skibitzki, Oliver and Zaumseil, Peter and Schr{\"o}der, Thomas}, title = {Characterization of reclaimed GaAs substrates and investigation of reuse for thin film InGaAlP LED epitaxial growth}, series = {Journal of Applied Physics}, volume = {120}, journal = {Journal of Applied Physics}, number = {4}, issn = {1089-7550}, doi = {10.1063/1.4955333}, pages = {045301}, language = {en} } @misc{NiuCapelliniHatamietal., author = {Niu, Gang and Capellini, Giovanni and Hatami, Fariba and Bartolomeo, Antonio di and Niermann, Tore and Hameed, Hussein Emad and Schubert, Markus Andreas and Krause, Hans-Michael and Zaumseil, Peter and Skibitzki, Oliver and Masselink, William T. and Lehmann, Michael and Xie, Ya-Hong and Schr{\"o}der, Thomas}, title = {Selective Epitaxy of InP on Si and Rectification in Graphene/InP/Si Hybrid Structure}, series = {ACS Applied Materials and Interfaces}, volume = {8}, journal = {ACS Applied Materials and Interfaces}, number = {40}, issn = {1944-8244}, doi = {10.1021/acsami.6b09592}, pages = {26948 -- 26955}, language = {en} } @misc{SkibitzkiCapelliniYamamotoetal., author = {Skibitzki, Oliver and Capellini, Giovanni and Yamamoto, Yuji and Zaumseil, Peter and Schubert, Markus Andreas and Schr{\"o}der, Thomas and Ballabio, Andrea and Bergamaschini, Roberto and Salvalaglio, Marco and Miglio, Leo and Montalenti, Francesco}, title = {RP-CVD growth of isolated Ge crystals and suspended layers on micrometric Si pillars}, series = {ACS Applied Materials and Interfaces}, volume = {8}, journal = {ACS Applied Materials and Interfaces}, number = {39}, issn = {1944-8244}, doi = {10.1021/acsami.6b07694}, pages = {26374 -- 26380}, language = {en} } @misc{SchlykowKlesseNiuetal., author = {Schlykow, Viktoria and Klesse, Wolfgang Matthias and Niu, Gang and Taoka, Noriyuki and Yamamoto, Yuji and Skibitzki, Oliver and Barget, M. R. and Zaumseil, Peter and K{\"a}nel, Hans von and Schubert, Markus Andreas and Capellini, Giovanni and Schroeder, Thomas}, title = {Selective growth of fully relaxed GeSn nano-islands by nanoheteroepitaxy on patterned Si(001)}, series = {Applied Physics Letters}, volume = {109}, journal = {Applied Physics Letters}, number = {20}, issn = {1077-3118}, doi = {10.1063/1.4967500}, pages = {202102}, language = {en} } @inproceedings{SeifarthWalczykLupinaetal., author = {Seifarth, Olaf and Walczyk, Christian and Lupina, Grzegorz and Zaumseil, Peter and Schmeißer, Dieter and M{\"u}ssig, Hans-Joachim and Schroeder, Thomas}, title = {The electronic band diagram of thin PrO2(111) / Pr-silicate buffers on Si(111) and its relevance to dielectric properties}, series = {Verhandlungen der Deutschen Physikalischen Gesellschaft, Reihe 6, Bd. 44}, booktitle = {Verhandlungen der Deutschen Physikalischen Gesellschaft, Reihe 6, Bd. 44}, publisher = {Deutsche Physikalische Gesellschaft}, address = {Bad Honnef}, issn = {0420-0195}, pages = {S. 136}, abstract = {Thin dielectric buffers of cubic PrO2(111) on Si(111) are ideally suited to integrate Ge onto Si by moderating the lattice mismatch between the materials. The leakage current across this dielectric buffer is strongly influenced by the electronic band diagram and defects inside the band gap. Therefore, we measured the band offsets, band gaps and defect positions by means of synchrotron radiation based photoemission spectroscopy techniques (XPS and XAS) with special emphasis on the Pr-silicate interface. In a next step we compare the spectroscopic data with information from dielectric studies, based on temperature dependent leakage current studies. We observe a close relation between dielectric properties and the electronic structure.}, language = {en} } @inproceedings{SeifarthWilkeWalczyketal., author = {Seifarth, Olaf and Wilke, A. and Walczyk, Christian and Dabrowski, Jarek Marek and Zaumseil, Peter and Schmeißer, Dieter and M{\"u}ssig, Hans-Joachim and Schroeder, Thomas}, title = {Band gap and electronic structure determination with XAS and UPS of thin Pr-oxide films on Si(111)}, series = {Proceedings of 15th Workshop on Dielectrics in Microelectronics, Bad Saarow, 23 - 25 June 2008, Bad Saarow (Berlin)}, booktitle = {Proceedings of 15th Workshop on Dielectrics in Microelectronics, Bad Saarow, 23 - 25 June 2008, Bad Saarow (Berlin)}, pages = {285 -- 286}, language = {en} } @inproceedings{GoryachkoBeuckertZaumseiletal., author = {Goryachko, Andriy and Beuckert, Guido and Zaumseil, Peter and Wagner, Guenter and Schmeißer, Dieter}, title = {Investigations of Pr2O3 growth modes on 4H-SiC(0001) Surfaces}, series = {Verhandlungen der Deutschen Physikalischen Gesellschaft}, booktitle = {Verhandlungen der Deutschen Physikalischen Gesellschaft}, publisher = {Deutsche Physikalische Gesellschaft}, address = {Bad Honnef}, isbn = {ISSN 0420-0195}, abstract = {The SiC is suited especially well for high power and high voltage semiconductor devices. In order to increase the reliability against electrical breakdown of metal-insulator-semiconductor (MIS) structures, one needs to use the insulator with possibly higher dielectric constant. Pr2O3 is shown to posses a much higher dielectric constant (equals 30) than traditionally used SiO2. Therefore, Pr2O3/SiC is an excellent material combination for high voltage MIS devices. The 4H-SiC(0001) substrates are characterised with scanning tunneling microscopy, while the Pr2O3 surface - with atomic force microscopy technique. We show distinct growth modes of Pr2O3 film, such as 3D and layer by layer growth. The crystalline structure and film thickness are determined by X-ray diffraction and its chemical composition by X-ray photoelectron spectroscopy. The Pr2O3 film characteristics are optimised for high-quality MIS structures in terms of lateral uniformity, low interface states density and leakage current, as well as physical integrity.}, language = {en} } @misc{DudekLupinaKozłowskietal., author = {Dudek, Piotr T. and Lupina, Grzegorz and Kozłowski, Grzegorz and Zaumseil, Peter and Bauer, Jakob and Fursenko, Oksana and Dabrowski, Jarek Marek and Schmidt, R. and Lippert, Gunther and M{\"u}ssig, Hans-Joachim and Schr{\"o}der, Thomas and Schmeißer, Dieter and Zschech, Ehrenfried}, title = {Atomic-scale engineering of future high-k dynamic random access memory dielectrics: The example of partial Hf substitution by Ti in BaHfO3}, series = {Journal of Vacuum Science and Technology / B}, volume = {29}, journal = {Journal of Vacuum Science and Technology / B}, number = {1}, issn = {2166-2754}, language = {en} } @misc{WendavFischerVirgilioetal., author = {Wendav, Torsten and Fischer, Inga Anita and Virgilio, Michele and Capellini, Giovanni and Oliveira, F. and Cerqueira, M. F. and Benedetti, A. and Chiussi, Stefano and Zaumseil, Peter and Schwartz, Bernhard and Busch, Kurt and Schulze, J.}, title = {Photoluminescence from ultrathin Ge-rich multiple quantum wells observed up to room temperature: Experiments and modeling}, series = {Physical Review B 94}, volume = {94}, journal = {Physical Review B 94}, number = {24}, doi = {10.1103/PhysRevB.94.245304}, pages = {245304}, language = {en} } @misc{FischerClausenSchwarzetal., author = {Fischer, Inga Anita and Clausen, Caterina J. and Schwarz, Daniel and Zaumseil, Peter and Capellini, Giovanni and Virgilio, Michele and da Silva Figueira, Maria Cecilia and Birner, Stefan and Koelling, Sebastian and Koenraad, Paul M. and Huang, Michael R. S. and Koch, Christoph T. and Wendav, Torsten and Busch, Kurt and Schulze, J{\"o}rg}, title = {Composition analysis and transition energies of ultrathin Sn-rich GeSn quantum wells}, series = {Physical Review Materials}, volume = {4}, journal = {Physical Review Materials}, number = {2}, issn = {2475-9953}, doi = {10.1103/PhysRevMaterials.4.024601}, pages = {10}, language = {en} } @misc{ZoellnerDabrowskiZaumseiletal., author = {Z{\"o}llner, Marvin Hartwig and Dabrowski, Jarek Marek and Zaumseil, Peter and Giussani, A. and Schubert, Markus Andreas and Lupina, Grzegorz and Wilkens, Henrik and Wollschl{\"a}ger, Joachim and B{\"a}umer, Marcus and Reichling, M. and Schr{\"o}der, Thomas}, title = {On the unusual stacking behavior of twin-free, type B oriented CeO2(111) films on hexagonal Pr2O3(0001) / Si(111) systems}, series = {Physical Review}, volume = {85}, journal = {Physical Review}, number = {3}, issn = {1098-0121}, doi = {10.1103/PhysRevB.85.035302}, pages = {035302 -- 035311}, language = {en} } @misc{NiuZoellnerZaumseiletal., author = {Niu, Gang and Z{\"o}llner, Marvin Hartwig and Zaumseil, Peter and Pouliopoulos, A. and d'Acapito, F. and Schr{\"o}der, Thomas and Boscherini, F.}, title = {X-ray diffraction and extended X-ray absorption fine structure study of epitaxial mixed ternary bixbyite PrxY2-xO3 (x=0-2) films on Si (111)}, series = {Journal of Applied Physics}, volume = {113}, journal = {Journal of Applied Physics}, number = {4}, issn = {0021-8979}, pages = {043504 -- 043506}, language = {en} }