@misc{LupinaDabrowskiFormaneketal., author = {Lupina, Grzegorz and Dabrowski, Jarek Marek and Formanek, Peter and Schmeißer, Dieter and Sorge, Roland and Wenger, Christian and Zaumseil, Peter and M{\"u}ssig, Hans-Joachim}, title = {Solid-state reaction between Pr and SiO2 studied by photoelectron spectroscopy and ab initio calculations}, series = {Materials Science in Semiconductor Processing}, volume = {7}, journal = {Materials Science in Semiconductor Processing}, number = {4-6}, issn = {1369-8001}, pages = {215 -- 220}, abstract = {We report on the structural and electrical properties of Pr-based high-k dielectric films fabricated by solid-state reaction between metallic Pr and SiO2 underlayers. A non-destructive depth profiling using synchrotron radiation excited photoelectron spectroscopy (SR-PES), X-ray photoelectron spectroscopy (XPS) and transmission electron microscopy (TEM) were employed to examine the chemical composition and microstructure. Ab initio calculations were done to gain insight into the physical processes involved. SR-PES results indicate that Pr deposition at room temperature (RT) leads to the formation of a Pr silicide and a Pr oxide, what is in good agreement with the scenario expected from ab initio calculations. As revealed by TEM and electrical measurements, oxidation of the reacted structures, followed by annealing, results in a stacked dielectric composed of a SiO2-based buffer with an enhanced permittivity and a Pr silicate film with a high dielectric constant. The leakage current density of 10-4 A/cm2 was measured for stacks with capacitance equivalent thickness (CET) of 1.5 nm prepared by evaporation of the Pr layer on a 1.8 nm SiO2 film, followed by oxidation in air ambient and annealing in N2 atmosphere. The capacitance-voltage (C-V) curves exhibit a large flatband voltage (VFB) shift indicating the presence of a positive charge in the stack. Switching away from the Al contacts to Au gate electrodes introduces a significant reduction of the VFB by 1.3 eV, what is much more than the change expected from the work function difference between Al and Au (not, vert, similar0.9 eV). This in turn implies that VFB is strongly affected by the gate interface electrode.}, language = {en} } @misc{MuessigDabrowskiWengeretal., author = {M{\"u}ssig, Hans-Joachim and Dabrowski, Jarek Marek and Wenger, Christian and Lupina, Grzegorz and Sorge, Roland and Formanek, Peter and Zaumseil, Peter and Schmeißer, Dieter}, title = {Ultrathin Dielectric Films Grown by Solid Phase Reaction of Pr with SiO2}, series = {MRS Proceedings}, volume = {811}, journal = {MRS Proceedings}, issn = {1946-4274}, pages = {D7.10.}, language = {en} } @misc{TarnawskaZaumseilSchubertetal., author = {Tarnawska, Lidia Lupina and Zaumseil, Peter and Schubert, Markus Andreas and Okur, S. and Morkoc, H. and Paszkiewicz, R. and Storck, Peter and Schroeder, Thomas}, title = {Structural and optical quality of GaN on Sc2O3 / Y2O3 / Si(111)}, series = {Journal of Applied Physics}, volume = {111}, journal = {Journal of Applied Physics}, number = {7}, issn = {0021-8979}, doi = {10.1063/1.3699201}, pages = {073509 -- 073509-4}, language = {en} } @misc{KozłowskiFursenkoZaumseiletal., author = {Kozłowski, Grzegorz and Fursenko, Oksana and Zaumseil, Peter and Schroeder, Thomas and Vorderwestner, M. and Storck, Peter}, title = {The epitaxial growth of low defect SiGe buffer layers for integration of new materials on 300 mm silicon wafers}, series = {ECS transactions}, volume = {50}, journal = {ECS transactions}, number = {9}, issn = {1938-6737}, pages = {613 -- 621}, language = {en} } @inproceedings{SeifarthWalczykLupinaetal., author = {Seifarth, Olaf and Walczyk, Christian and Lupina, Grzegorz and Dabrowski, Jaroslaw and Weidner, G{\"u}nter and Zaumseil, Peter and Schmeißer, Dieter and Storck, Peter and M{\"u}ssig, Hans-Joachim and Schroeder, Thomas}, title = {On the electronic and dielectric characterisation of thin cubic PrO2 layers on Silicon}, series = {Verhandlungen der Deutschen Physikalischen Gesellschaft, Reihe 6, Bd. 43}, booktitle = {Verhandlungen der Deutschen Physikalischen Gesellschaft, Reihe 6, Bd. 43}, publisher = {Deutsche Physikalische Gesellschaft}, address = {Bad Honnef}, issn = {0420-0195}, pages = {S. 196}, abstract = {For the integration of 100 \% Ge onto the Si platform, a buffer oxide approach has been developed recently, using rare earth oxides to tune the lattice constant between the Si and the Ge. Among these buffer oxides, PrO2 is a prospective candidate with high quality crystalline growth on Si, moderated by an interfacial Pr-silicate between. In order to specify electronic properties of thin PrO2 and its interface on Si(111), especially the width of the band gap, we performed synchrotron radiation based XPS, UPS and XAS measurements at the U49/2 PGM 2 beamline at BESSY II and correlate the results with our structural characterisation performed by TEM and XRD. In order to evaluate the dielectric properties of thin PrO2 layers on Si(111), we performed temperature-, time-, voltage-, and layer thickness-dependent leakage current measurements (J-V). Here, we identified relaxation behaviour in the leakage current, successfully addressed to defect like states inside the Pr-silicate interface layer, corroborated by frequency dependent capacitance versus voltage (C-V) measurements.}, language = {en} } @misc{ZoellnerRichardChahineetal., author = {Z{\"o}llner, Marvin Hartwig and Richard, Marie-Ingrid and Chahine, Gilbert A. and Zaumseil, Peter and Reich, Christian and Capellini, Giovanni and Montalenti, Francesco and Marzegalli, Anna and Xie, Ya-Hong and Sch{\"u}lli, Tobias U. and H{\"a}berlen, Maik and Storck, Peter and Schroeder, Thomas}, title = {Imaging structure and composition homogeneity of 300 mm SiGe virtual substrates for advanced CMOS applications by scanning X-ray diffraction microscopy}, series = {ACS Applied Materials and Interfaces}, volume = {7}, journal = {ACS Applied Materials and Interfaces}, number = {17}, issn = {1944-8252}, doi = {10.1021/am508968b}, pages = {9031 -- 9037}, language = {en} } @misc{RichardZoellnerChahineetal., author = {Richard, Marie-Ingrid and Z{\"o}llner, Marvin Hartwig and Chahine, Gilbert A. and Zaumseil, Peter and Capellini, Giovanni and H{\"a}berlen, Maik and Storck, Peter and Sch{\"u}lli, Tobias U. and Schr{\"o}der, Thomas}, title = {Structural Mapping of Functional Ge Layers Grown on Graded SiGe Buffers for sub-10 nm CMOS Applications Using Advanced X-ray Nano-Diffraction}, series = {ACS Applied Materials and Interfaces}, volume = {7}, journal = {ACS Applied Materials and Interfaces}, number = {48}, issn = {1944-8244}, doi = {10.1021/acsami.5b08645}, pages = {26696 -- 26700}, language = {en} } @inproceedings{SeifarthWilkeWalczyketal., author = {Seifarth, Olaf and Wilke, A. and Walczyk, Christian and Dabrowski, Jarek Marek and Zaumseil, Peter and Schmeißer, Dieter and M{\"u}ssig, Hans-Joachim and Schroeder, Thomas}, title = {Band gap and electronic structure determination with XAS and UPS of thin Pr-oxide films on Si(111)}, series = {Proceedings of 15th Workshop on Dielectrics in Microelectronics, Bad Saarow, 23 - 25 June 2008, Bad Saarow (Berlin)}, booktitle = {Proceedings of 15th Workshop on Dielectrics in Microelectronics, Bad Saarow, 23 - 25 June 2008, Bad Saarow (Berlin)}, pages = {285 -- 286}, language = {en} } @inproceedings{LippertDabrowskiCostinaetal., author = {Lippert, Gunther and Dabrowski, Jarek Marek and Costina, Ioan and Lupina, Grzegorz and Ratzke, Markus and Zaumseil, Peter and M{\"u}ssig, Hans-Joachim}, title = {Morphology and Composition of Praseodymium Based High-k Materials and Their Relevance to Dielectric Properties of Thin-Films}, language = {en} } @misc{DudekLupinaKozłowskietal., author = {Dudek, Piotr T. and Lupina, Grzegorz and Kozłowski, Grzegorz and Zaumseil, Peter and Bauer, Jakob and Fursenko, Oksana and Dabrowski, Jarek Marek and Schmidt, R. and Lippert, Gunther and M{\"u}ssig, Hans-Joachim and Schr{\"o}der, Thomas and Schmeißer, Dieter and Zschech, Ehrenfried}, title = {Atomic-scale engineering of future high-k dynamic random access memory dielectrics: The example of partial Hf substitution by Ti in BaHfO3}, series = {Journal of Vacuum Science and Technology / B}, volume = {29}, journal = {Journal of Vacuum Science and Technology / B}, number = {1}, issn = {2166-2754}, language = {en} } @misc{ZaumseilYamamotoBaueretal., author = {Zaumseil, Peter and Yamamoto, Yuji and Bauer, Joachim and Schubert, Markus Andreas and Matejova, Jana and Kozłowski, Grzegorz and Schr{\"o}der, Thomas and Tillack, Bernd}, title = {Preparation and Characterization of Ge Epitaxially Grown on Nano-structured Periodic Si Pillars and Bars on Si(001) Substrate}, series = {Thin Solid Films}, volume = {520}, journal = {Thin Solid Films}, number = {8}, issn = {0040-6090}, doi = {10.1016/j.tsf.2011.10.178}, pages = {3240 -- 3244}, language = {en} } @misc{CapelliniDeSetaZaumseiletal., author = {Capellini, Giovanni and De Seta, Monica and Zaumseil, Peter and Kozłowski, Grzegorz and Schroeder, Thomas}, title = {High temperature x-ray diffraction measurements on Ge/Si(001) heterostructures: a study on the residual tensile strain}, series = {Journal of Applied Physics}, volume = {111}, journal = {Journal of Applied Physics}, number = {7}, issn = {0021-8979}, doi = {10.1063/1.3702443}, language = {en} } @misc{KozłowskiZaumseilSchubertetal., author = {Kozłowski, Grzegorz and Zaumseil, Peter and Schubert, Markus Andreas and Yamamoto, Yuji and Sch{\"u}lli, Tobias U. and Tillack, Bernd and Schroeder, Thomas}, title = {Growth and relaxation processes in Ge nanocrystals on free-standing Si(001) nanopillars}, series = {Nanotechnology}, volume = {23}, journal = {Nanotechnology}, number = {11}, issn = {0957-4484}, doi = {10.1088/0957-4484/23/11/115704}, pages = {115704 -- 115711}, language = {en} } @misc{ZoellnerDabrowskiZaumseiletal., author = {Z{\"o}llner, Marvin Hartwig and Dabrowski, Jarek Marek and Zaumseil, Peter and Giussani, A. and Schubert, Markus Andreas and Lupina, Grzegorz and Wilkens, Henrik and Wollschl{\"a}ger, Joachim and B{\"a}umer, Marcus and Reichling, M. and Schr{\"o}der, Thomas}, title = {On the unusual stacking behavior of twin-free, type B oriented CeO2(111) films on hexagonal Pr2O3(0001) / Si(111) systems}, series = {Physical Review}, volume = {85}, journal = {Physical Review}, number = {3}, issn = {1098-0121}, doi = {10.1103/PhysRevB.85.035302}, pages = {035302 -- 035311}, language = {en} } @misc{SkibitzkiHatamiYamamotoetal., author = {Skibitzki, Oliver and Hatami, Fariba and Yamamoto, Yuji and Zaumseil, Peter and Trampert, A. and Schubert, Markus Andreas and Tillack, Bernd and Schroeder, Thomas}, title = {GaP collector development for SiGe HBT performance increase: A heterostructure growth study}, series = {Journal of Applied Physics}, volume = {111}, journal = {Journal of Applied Physics}, number = {7}, issn = {0021-8979}, doi = {10.1063/1.3701583}, pages = {073515 -- 073515-9}, language = {en} } @misc{ZoellnerZaumseilWilkensetal., author = {Z{\"o}llner, Marvin Hartwig and Zaumseil, Peter and Wilkens, Henrik and Gevers, Sebastian and Wollschl{\"a}ger, Joachim and B{\"a}umer, Marcus and Xie, Ya-Hong and Niu, Gang and Schroeder, Thomas}, title = {Stoichiometry-structure correlation of epitaxial Ce1-xPrxO2-δ (x = 0-1) thin films on Si(111)}, series = {Journal of Crystal Growth}, volume = {355}, journal = {Journal of Crystal Growth}, number = {1}, issn = {0022-0248}, pages = {159 -- 165}, language = {en} } @misc{ZaumseilKozłowskiYamamotoetal., author = {Zaumseil, Peter and Kozłowski, Grzegorz and Yamamoto, Yuji and Bauer, J. and Schubert, Markus Andreas and Sch{\"u}lli, Tobias U. and Tillack, Bernd and Schroeder, Thomas}, title = {Compliant Si nanostructures on SOI for Ge nanoheteroepitaxy - a case study for lattice mismatched semiconductor integration on Si(001)}, series = {Journal of Applied Physics}, volume = {112}, journal = {Journal of Applied Physics}, number = {4}, issn = {0021-8979}, pages = {043506 -- 043511}, language = {en} } @misc{ZaumseilKozłowskiSchubertetal., author = {Zaumseil, Peter and Kozłowski, Grzegorz and Schubert, Markus Andreas and Yamamoto, Yuji and Bauer, J. and Sch{\"u}lli, Tobias U. and Tillack, Bernd and Schroeder, Thomas}, title = {The role of SiGe buffer in growth and relaxation of Ge on free-standing Si(001) nanopillars}, series = {Nanotechnology}, volume = {23}, journal = {Nanotechnology}, number = {35}, issn = {1361-6528}, pages = {355706}, language = {en} } @misc{BauerYamamotoZaumseiletal., author = {Bauer, J. and Yamamoto, Yuji and Zaumseil, Peter and Fursenko, Oksana and Schulz, K. and Kozłowski, Grzegorz and Schubert, Markus Andreas and Schroeder, Thomas and Tillack, Bernd}, title = {Nanostructured Silicon for Ge Nanoheteroepitaxy}, series = {Microelectronics Engineering}, volume = {97}, journal = {Microelectronics Engineering}, issn = {0167-9317}, pages = {169 -- 172}, language = {en} } @misc{ZoellnerNiuJhangetal., author = {Z{\"o}llner, Marvin Hartwig and Niu, Gang and Jhang, Jin-Hao and Sch{\"a}fer, Andreas and Zaumseil, Peter and B{\"a}umer, Marcus and Schr{\"o}der, Thomas}, title = {Temperature dependent reduction of epitaxial Ce1-xPrxO2-δ (x = 0-1) thin films on Si(111): A combined TPD, XRD, XPS and Raman study}, series = {Journal of Physical Chemistry : C}, volume = {117}, journal = {Journal of Physical Chemistry : C}, number = {47}, issn = {1932-7455}, doi = {10.1021/jp4082867}, pages = {24851 -- 24857}, language = {en} }