@misc{ZoellnerDabrowskiZaumseiletal., author = {Z{\"o}llner, Marvin Hartwig and Dabrowski, Jarek Marek and Zaumseil, Peter and Giussani, A. and Schubert, Markus Andreas and Lupina, Grzegorz and Wilkens, Henrik and Wollschl{\"a}ger, Joachim and B{\"a}umer, Marcus and Reichling, M. and Schr{\"o}der, Thomas}, title = {On the unusual stacking behavior of twin-free, type B oriented CeO2(111) films on hexagonal Pr2O3(0001) / Si(111) systems}, series = {Physical Review}, volume = {85}, journal = {Physical Review}, number = {3}, issn = {1098-0121}, doi = {10.1103/PhysRevB.85.035302}, pages = {035302 -- 035311}, language = {en} } @misc{WilkensSpiessZoellneretal., author = {Wilkens, Henrik and Spieß, Wanja and Z{\"o}llner, Marvin Hartwig and Niu, Gang and Schroeder, Thomas and Wollschl{\"a}ger, Joachim}, title = {Post deposition annealing of epitaxial Ce1-xPrxO2-δ films grown on Si(111)}, series = {Physical Chemistry Chemical Physics}, volume = {17}, journal = {Physical Chemistry Chemical Physics}, issn = {1463-9084}, doi = {10.1039/C6CP01553K}, pages = {9991 -- 9996}, language = {en} } @misc{NiuZoellnerSchroederetal., author = {Niu, Gang and Z{\"o}llner, Marvin Hartwig and Schr{\"o}der, Thomas and Sch{\"a}fer, Andreas and Jhang, Jin-Hao and Zielasek, Volkmar and B{\"a}umer, Marcus and Wilkens, Henrik and Wollschl{\"a}ger, Joachim and Olbrich, Reinhard and Lammers, Christian and Reichling, Michael}, title = {Controlling the physics and chemistry of binary and ternary praseodymium and cerium oxide systems}, series = {Physical Chemistry Chemical Physics}, volume = {17}, journal = {Physical Chemistry Chemical Physics}, number = {38}, issn = {1463-9084}, doi = {10.1039/C5CP02283E}, pages = {24513 -- 24540}, language = {en} } @misc{MahmoodinezhadMoralesNaumannetal., author = {Mahmoodinezhad, Ali and Morales, Carlos and Naumann, Franziska and Plate, Paul and Meyer, Robert and Janowitz, Christoph and Henkel, Karsten and Kot, Małgorzata and Z{\"o}llner, Marvin Hartwig and Wenger, Christian and Flege, Jan Ingo}, title = {Low-temperature atomic layer deposition of indium oxide thin films using trimethylindium and oxygen plasma}, series = {Journal of Vacuum Science and Technology A}, volume = {39}, journal = {Journal of Vacuum Science and Technology A}, number = {6}, issn = {0734-2101}, doi = {10.1116/6.0001375}, abstract = {Indium oxide (InxOy) thin films were deposited by plasma-enhanced atomic layer deposition (PEALD) using trimethylindium and oxygen plasma in a low-temperature range of 80-200 °C. The optical properties, chemical composition, crystallographic structure, and electrical characteristics of these layers were investigated by spectroscopic ellipsometry (SE), x-ray photoelectron spectroscopy (XPS), x-ray diffraction (XRD), as well as current-voltage and capacitance-voltage measurements. The SE results yielded a nearly constant growth rate of 0.56 {\AA} per cycle and a thickness inhomogeneity of ≤1.2\% across 4-in. substrates in the temperature range of 100-150 °C. The refractive index (at 632.8 nm) was found to be 2.07 for the films deposited at 150 °C. The PEALD-InxOy layers exhibit a direct (3.3 ± 0.2 eV) and an indirect (2.8 ± 0.1 eV) bandgap with an uptrend for both with increasing substrate temperature. Based on XPS characterization, all InxOy samples are free of carbon impurities and show a temperature-dependent off-stoichiometry indicating oxygen vacancies. XRD diffraction patterns demonstrate an onset of crystallization at 150 °C. Consistent with the optical, XPS, and XRD data, the films deposited at ≥150 °C possess higher electrical conductivity. Our findings prove that a low-temperature PEALD process of InxOy is feasible and promising for a high-quality thin-film deposition without chemical impurities on thermally fragile substrates.}, language = {en} } @misc{NiuZoellnerZaumseiletal., author = {Niu, Gang and Z{\"o}llner, Marvin Hartwig and Zaumseil, Peter and Pouliopoulos, A. and d'Acapito, F. and Schr{\"o}der, Thomas and Boscherini, F.}, title = {X-ray diffraction and extended X-ray absorption fine structure study of epitaxial mixed ternary bixbyite PrxY2-xO3 (x=0-2) films on Si (111)}, series = {Journal of Applied Physics}, volume = {113}, journal = {Journal of Applied Physics}, number = {4}, issn = {0021-8979}, pages = {043504 -- 043506}, language = {en} } @misc{OlbrichWilkensOelkeetal., author = {Olbrich, R. and Wilkens, Henrik and Oelke, R. and Wollschl{\"a}ger, Joachim and Z{\"o}llner, Marvin Hartwig and Schroeder, Thomas and Reichling, M.}, title = {A well-structured metastable ceria surface}, series = {Applied Physics Letters}, volume = {104}, journal = {Applied Physics Letters}, number = {8}, doi = {10.1063/1.4866667}, pages = {081910-1 -- 081910-4}, language = {en} } @misc{KuschelDieckWilkensetal., author = {Kuschel, Olga and Dieck, Florian and Wilkens, Henrik and Gevers, Sebastian and Rodewald, Jari and Otte, Christian and Z{\"o}llner, Marvin Hartwig and Niu, Gang and Schr{\"o}der, Thomas and Wollschl{\"a}ger, Joachim}, title = {Plasma Enhanced Complete Oxidtation of Ultrathin Epitaxial Praseodymia Films on Si(111)}, series = {Materials}, volume = {8}, journal = {Materials}, number = {9}, issn = {1996-1944}, doi = {10.3390/ma8095312}, pages = {6379 -- 6390}, language = {en} } @misc{WilkensSchuckmannOelkeetal., author = {Wilkens, Henrik and Schuckmann, O. and Oelke, R. and Gevers, Sebastian and Reichling, M. and Schaefer, A. and B{\"a}umer, Marcus and Z{\"o}llner, Marvin Hartwig and Niu, Gang and Schroeder, Thomas and Wollschl{\"a}ger, Joachim}, title = {Structural transitions of epitaxial ceria films on Si(111)}, series = {Physical Chemistry Chemical Physics}, volume = {15}, journal = {Physical Chemistry Chemical Physics}, number = {42}, issn = {1463-9084}, pages = {18589 -- 18599}, language = {en} } @misc{NiuZaumseilSchubertetal., author = {Niu, Gang and Zaumseil, Peter and Schubert, Markus Andreas and Z{\"o}llner, Marvin Hartwig and Dabrowski, Jarek Marek and Schroeder, Thomas}, title = {Lattice-matched single crystalline ternary PrxY2-xO3 films on SrO-passivated Si (001): interface engineering and crystallography tailoring}, series = {Applied Physics Letters}, volume = {102}, journal = {Applied Physics Letters}, pages = {011906-1 -- 011906-5}, language = {en} } @misc{WilkensRodewaldGeversetal., author = {Wilkens, Henrik and Rodewald, Jari and Gevers, Sebastian and Z{\"o}llner, Marvin Hartwig and Schroeder, Thomas and Wollschl{\"a}ger, Joachim}, title = {Surface morphology of ultra-thin hex-Pr2O3 films on Si(111)}, series = {Journal of Physics : D, Applied Physics}, volume = {46}, journal = {Journal of Physics : D, Applied Physics}, number = {28}, issn = {0022-3727}, pages = {285306 -- 285313}, language = {en} } @misc{ChahineZoellnerRichardetal., author = {Chahine, Gilbert A. and Z{\"o}llner, Marvin Hartwig and Richard, Marie-Ingrid and Subhajit, G. and Zaumseil, Peter and Capellini, Giovanni and Schroeder, Thomas and Sch{\"u}lli, Tobias U.}, title = {Strain and Lattice Orientation Distribution in SiN/Ge CMOS Compatible Light Emitters Microstructures by Quick X-ray Nano-diffraction Microscopy}, series = {Applied Physics Letters}, volume = {106}, journal = {Applied Physics Letters}, issn = {1077-3118}, doi = {10.1063/1.4909529}, pages = {071902-1 -- 071902-4}, language = {en} } @misc{ZoellnerZaumseilWilkensetal., author = {Z{\"o}llner, Marvin Hartwig and Zaumseil, Peter and Wilkens, Henrik and Gevers, Sebastian and Wollschl{\"a}ger, Joachim and B{\"a}umer, Marcus and Xie, Ya-Hong and Niu, Gang and Schroeder, Thomas}, title = {Stoichiometry-structure correlation of epitaxial Ce1-xPrxO2-δ (x = 0-1) thin films on Si(111)}, series = {Journal of Crystal Growth}, volume = {355}, journal = {Journal of Crystal Growth}, number = {1}, issn = {0022-0248}, pages = {159 -- 165}, language = {en} } @misc{ZaumseilYamamotoSchubertetal., author = {Zaumseil, Peter and Yamamoto, Yuji and Schubert, M. and Capellini, Giovanni and Skibitzki, Oliver and Z{\"o}llner, Marvin Hartwig and Schroeder, Thomas}, title = {Tailoring the strain in Si nano-structures for defect-free epitaxial Ge overgrowth}, series = {Nanotechnology}, volume = {26}, journal = {Nanotechnology}, number = {35}, issn = {1361-6528}, doi = {10.1088/0957-4484/26/35/355707}, pages = {355707}, language = {en} } @misc{WilkensSchuckmannOelkeetal., author = {Wilkens, Henrik and Schuckmann, O. and Oelke, R. and Gevers, Sebastian and Schaefer, A. and B{\"a}umer, Marcus and Z{\"o}llner, Marvin Hartwig and Schroeder, Thomas and Wollschl{\"a}ger, Joachim}, title = {Stabilization of the ceria Jota-phase Ce7O12 surface on Si(111)}, series = {Applied Physics Letters}, volume = {102}, journal = {Applied Physics Letters}, number = {11}, issn = {0003-6951}, pages = {111602-1 -- 111602-3}, language = {en} } @misc{ZoellnerNiuJhangetal., author = {Z{\"o}llner, Marvin Hartwig and Niu, Gang and Jhang, Jin-Hao and Sch{\"a}fer, Andreas and Zaumseil, Peter and B{\"a}umer, Marcus and Schr{\"o}der, Thomas}, title = {Temperature dependent reduction of epitaxial Ce1-xPrxO2-δ (x = 0-1) thin films on Si(111): A combined TPD, XRD, XPS and Raman study}, series = {Journal of Physical Chemistry : C}, volume = {117}, journal = {Journal of Physical Chemistry : C}, number = {47}, issn = {1932-7455}, doi = {10.1021/jp4082867}, pages = {24851 -- 24857}, language = {en} } @misc{JanowitzMahmoodinezhadKotetal., author = {Janowitz, Christoph and Mahmoodinezhad, Ali and Kot, Małgorzata and Morales, Carlos and Naumann, Franziska and Plate, Paul and Z{\"o}llner, Marvin Hartwig and B{\"a}rwolf, Florian and Stolarek, David and Wenger, Christian and Henkel, Karsten and Flege, Jan Ingo}, title = {Toward controlling the Al2O3/ZnO interface properties by in situ ALD preparation}, series = {Dalton Transactions}, volume = {51}, journal = {Dalton Transactions}, issn = {1477-9234}, doi = {10.1039/D1DT04008A}, pages = {9291 -- 9301}, abstract = {An Al2O3/ZnO heterojunction was grown on a Si single crystal substrate by subsequent thermal and plasma-assisted atomic layer deposition (ALD) in situ. The band offsets of the heterointerface were then studied by consecutive removal of the layers by argon sputtering, followed by in situ X-ray photoelectron spectroscopy. The valence band maximum and conduction band minimum of Al2O3 are found to be 1.1 eV below and 2.3 eV above those of ZnO, resulting in a type-I staggered heterojunction. An apparent reduction of ZnO to elemental Zn in the interface region was detected in the Zn 2p core level and Zn L3MM Auger spectra. This suggests an interface formation different from previous models. The reduction of ZnO to Zn in the interface region accompanied by the creation of oxygen vacancies in ZnO results in an upward band bending at the interface. Therefore, this study suggests that interfacial properties such as the band bending as well as the valence and conduction band offsets should be in situ controllable to a certain extent by careful selection of the process parameters.}, language = {en} } @misc{ReiterHanMaietal., author = {Reiter, Sebastian and Han, Weijia and Mai, Christian and Spirito, Davide and Jose, Josmy and Z{\"o}llner, Marvin Hartwig and Fursenko, Oksana and Schubert, Markus Andreas and Stemmler, Ivo and Wenger, Christian and Fischer, Inga Anita}, title = {Titanium Nitride Plasmonic Nanohole Arrays for CMOS-Compatible Integrated Refractive Index Sensing: Influence of Layer Thickness on Optical Properties}, series = {Plasmonics}, journal = {Plasmonics}, issn = {1557-1963}, doi = {10.1007/s11468-023-01810-3}, pages = {1 -- 13}, language = {en} } @misc{SanaTetznerDabrowskietal., author = {Sana, Prabha and Tetzner, Henriette and Dabrowski, Jarek Marek and Tarnawska, Lidia Lupina and Costina, Ioan and Thapa, Sarad and Storck, Peter and Schr{\"o}der, Thomas and Z{\"o}llner, Marvin Hartwig}, title = {Growth of ScN(111) on Sc₂O₃ (111) for GaN integration on Si(111): Experiment and ab initio calculations}, series = {Journal of Applied Physics}, volume = {120}, journal = {Journal of Applied Physics}, issn = {1089-7550}, doi = {10.1063/1.4963826}, pages = {135103}, language = {en} } @misc{PieperDerksZoellneretal., author = {Pieper, H. H. and Derks, C. and Z{\"o}llner, Marvin Hartwig and Olbrich, R. and Troeger, L. and Schroeder, Thomas and Neumann, M. and Reichling, M.}, title = {Morphology and nanostructure of CeO2(111) surfaces of single crystals and of Si(111) supported ceria films,}, series = {Physical Chemistry Chemical Physics}, volume = {14}, journal = {Physical Chemistry Chemical Physics}, number = {44}, issn = {1463-9084}, doi = {10.1039/C2CP42733H}, pages = {15361 -- 15368}, language = {en} } @misc{RichardZoellnerChahineetal., author = {Richard, Marie-Ingrid and Z{\"o}llner, Marvin Hartwig and Chahine, Gilbert A. and Zaumseil, Peter and Capellini, Giovanni and H{\"a}berlen, Maik and Storck, Peter and Sch{\"u}lli, Tobias U. and Schr{\"o}der, Thomas}, title = {Structural Mapping of Functional Ge Layers Grown on Graded SiGe Buffers for sub-10 nm CMOS Applications Using Advanced X-ray Nano-Diffraction}, series = {ACS Applied Materials and Interfaces}, volume = {7}, journal = {ACS Applied Materials and Interfaces}, number = {48}, issn = {1944-8244}, doi = {10.1021/acsami.5b08645}, pages = {26696 -- 26700}, language = {en} }