@inproceedings{RudolphKurpasBrunneretal., author = {Rudolph, Matthias and Kurpas, Paul and Brunner, F. and Doser, W. and Maaßdorf, Andre and D{\"o}rner, Ralf and Blanck, H. and Heinrich, Wolfgang and W{\"u}rfl, Joachim}, title = {Development and Characterization of GaInP/GaAs HBTs for High Voltage Operation}, language = {en} } @misc{RudolphWuerflKurpasetal., author = {Rudolph, Matthias and W{\"u}rfl, Joachim and Kurpas, Paul and Brunner, F. and Mai, M.}, title = {Degradation properties of MOVPE-grown GaInP/GaAs HBTs under combined temperatureand current stressing}, language = {en} } @inproceedings{KuhnertLenkHilsenbecketal., author = {Kuhnert, Holger and Lenk, Friedrich and Hilsenbeck, Jochen and W{\"u}rfl, Joachim and Heinrich, Wolfgang}, title = {Low phase-noise GaInP/GaAs-HBT MMIC oscillators up to 36 GHz}, series = {2001 IEEE MTT-S International Microwave Symposium digest, May 20 - 25, 2001, Phoenix Civic Plaza, Phoenix, AZ, vol. 3}, booktitle = {2001 IEEE MTT-S International Microwave Symposium digest, May 20 - 25, 2001, Phoenix Civic Plaza, Phoenix, AZ, vol. 3}, publisher = {IEEE Service Center}, address = {Piscataway, NJ}, isbn = {0-7803-6538-0}, doi = {10.1109/MWSYM.2001.967198}, pages = {1551 -- 1554}, abstract = {Monolithic coplanar 18 and 36 GHz oscillators with GaInP/GaAs-HBTs and on-chip resonators are presented. Measured phase-noise reaches -93 dBc/Hz and -91 dBc/Hz at 100 kHz offset for 18 and 36 GHz, respectively. These values demonstrate that GaAs-HBT oscillators yield a phase-noise performance comparable to SiGe-HBTs, with the potential for higher frequencies.}, language = {en} }