@inproceedings{RudolphMostardinhaCabraletal., author = {Rudolph, Matthias and Mostardinha, H. and Cabral, P. M. and Carvalho, N. B. and Kurpas, Paul and W{\"u}rfl, Joachim and Pinto, J. C. and Barnes, J. and Garat, F.}, title = {GaN RF Oscillator Used in Space Applications}, doi = {http://dx.doi.org/10.1109/INMMIC.2010.5480142}, language = {en} } @misc{RudolphAchoucheKrausetal., author = {Rudolph, Matthias and Achouche, M. and Kraus, S. and Spitzbart, Th. and Kurpas, Paul and Rentner, D. and Brunner, F. and Richter, E. and Bergunde, T. and Heymann, Peter and Wolter, P. and Wittrich, H. and Weyers, M. and W{\"u}rfl, Joachim and Tr{\"a}nkle, G{\"u}nther}, title = {InGaP/GaAs Power HBTs for L-Band Applications}, language = {en} } @article{RudolphBehtashDoerneretal., author = {Rudolph, Matthias and Behtash, Reza and D{\"o}rner, Ralf and Hirche, Klaus and Wurfl, Joachim and Heinrich, Wolfgang and Tr{\"a}nkle, G{\"u}nther}, title = {Analysis of the Survivability of GaN Low-Noise Amplifiers}, language = {en} } @misc{RudolphKraemerSchmueckleetal., author = {Rudolph, Matthias and Kraemer, Tomas and Schm{\"u}ckle, Franz-Josef and W{\"u}rfl, Joachim and Tr{\"a}nkle, G{\"u}nther}, title = {InP DHBT Process in Transferred Substrate Technology with ft and fmax over 400 GHz}, language = {en} } @article{RudolphBehtashHircheetal., author = {Rudolph, Matthias and Behtash, Reza and Hirche, Klaus and W{\"u}rfl, Joachim and Heinrich, Wolfgang and Tr{\"a}nkle, G{\"u}nther}, title = {A Highly Survivable 3-7 GHz GaN Low-Noise Amplifier}, language = {en} } @misc{RudolphDewitzLieroetal., author = {Rudolph, Matthias and Dewitz, Mike and Liero, Armin and Khalil, I. and Chaturvedi, Nidhi and Wipf, Christian and Bertenburg, R. M. and Miller, J. and W{\"u}rfl, Joachim and Heinrich, Wolfgang and Tr{\"a}nkle, G{\"u}nther}, title = {Highly Robust X-Band LNA with Extremely Short Recovery Time}, language = {en} } @inproceedings{RudolphKurpasBrunneretal., author = {Rudolph, Matthias and Kurpas, Paul and Brunner, F. and Doser, W. and Maaßdorf, Andre and D{\"o}rner, Ralf and Blanck, H. and Heinrich, Wolfgang and W{\"u}rfl, Joachim}, title = {Development and Characterization of GaInP/GaAs HBTs for High Voltage Operation}, language = {en} } @misc{RudolphWuerflKurpasetal., author = {Rudolph, Matthias and W{\"u}rfl, Joachim and Kurpas, Paul and Brunner, F. and Mai, M.}, title = {Degradation properties of MOVPE-grown GaInP/GaAs HBTs under combined temperatureand current stressing}, language = {en} } @misc{KraemerMelianiLenketal., author = {Kraemer, Thorsten and Meliani, Chafik and Lenk, Friedrich and W{\"u}rfl, Joachim and Tr{\"a}nkle, G{\"u}nther}, title = {Transferred substrate DHBT of ft = 410 GHz and fmax = 480 GHz for traveling wave amplifiers}, series = {Indium Phosphide and Related Materials, 2008, IPRM 2008, 20th International Conference, Versailles, France, 25 - 29 May 2008}, journal = {Indium Phosphide and Related Materials, 2008, IPRM 2008, 20th International Conference, Versailles, France, 25 - 29 May 2008}, isbn = {978-1-4244-2258-6}, doi = {10.1109/ICIPRM.2008.4702999}, pages = {1 -- 3}, abstract = {We report a MMIC process in transferred substrate technology. The transistors of 0.8 times 5 mum2 emitter size feature ft = 410 GHz and fmax = 480 GHz at BVceo = 5.5 V. Traveling wave amplifiers of 12 dB broadband gain up to fc = 70 GHz were realized.}, language = {en} } @misc{KraemerLenkMaassdorfetal., author = {Kraemer, Thorsten and Lenk, Friedrich and Maaßdorf, Andre and W{\"u}rfl, Joachim and Tr{\"a}nkle, G{\"u}nther}, title = {High Yield Transferred Substrate InP DHBT}, series = {Indium Phosphide \& Related Materials, 2007, IPRM '07, IEEE 19th International Conference, Matsue, Japan, 14 - 18 May 2007}, journal = {Indium Phosphide \& Related Materials, 2007, IPRM '07, IEEE 19th International Conference, Matsue, Japan, 14 - 18 May 2007}, publisher = {IEEE}, address = {Piscataway, NJ}, isbn = {1-4244-0875-X}, doi = {10.1109/ICIPRM.2007.381210}, pages = {407 -- 408}, abstract = {A transferred substrate InP DHBT of 0.8 mum emitter width was developed. The transistors featured high yield and homogeneous device characteristics over the three inch wafer, with an average of ft = 300 GHz plusmn 3\%SD, fmax = 250 GHz plusmn 5\%SD at a breakdown voltage of BVceo = 6 V.}, language = {en} }