@article{GoryachkoYeromenkoHenkeletal., author = {Goryachko, Andriy and Yeromenko, Y. and Henkel, Karsten and Wollweber, J{\"u}rgen and Schmeißer, Dieter}, title = {The Si(001)/C2H2 interaction to form a buffer layer for 3C-SiC growth}, series = {Physica status solidi / A}, volume = {201}, journal = {Physica status solidi / A}, number = {2}, issn = {0031-8965}, pages = {245 -- 248}, abstract = {The intial stages of Si(001) interaction with C2H2 were investigated with XPS and surface profilometry. The carbon enriched layer serves as a buffer between Si substrate and the 3C-SiC film aimed at growing on Si(001). Such parameters as substrate temperature and process duration come into a complicated interplay of C deposition, its reaction with Si and out-diffusion of the later from the substrate. Three distinct regimes, namely graphite dominated, carbide dominated and roughness dominated are found to result from this interplay.}, language = {en} }