@inproceedings{IlkovDernovsekBakalskietal., author = {Ilkov, N. and Dernovsek, O. and Bakalski, Winfried and Weger, Peter and Matz, R. and Simb{\"u}rger, Werner}, title = {A 5 to 6.5 GHz LTCC Power Amplifier Module}, series = {Proceedings of the 36th International Symposium on Microelectronics (IMAPS), Boston, USA, 16 - 20 Nov. 2003, IEEE}, booktitle = {Proceedings of the 36th International Symposium on Microelectronics (IMAPS), Boston, USA, 16 - 20 Nov. 2003, IEEE}, publisher = {IMAPS}, address = {Washington, DC}, isbn = {0-930815-71-8}, language = {en} } @inproceedings{VasylyevWeger, author = {Vasylyev, Andriy and Weger, Peter}, title = {A Monolithic 2.4 GHz, 0.13 um CMOS Power Amplifier with 28 dBm Output Power and PAE at 1.2 V Supply}, language = {en} } @misc{SolomkoWeger, author = {Solomko, Valentyn A. and Weger, Peter}, title = {A Fully Integrated 3.3-3.8-GHz Power Amplifier With Autotransformer Balun}, language = {en} } @inproceedings{MeshcheriakovSolomkoWeger, author = {Meshcheriakov, Ievgenii and Solomko, Valentyn A. and Weger, Peter}, title = {Fully monolithically integrated X-band power amplifier without external matching}, series = {Conference on Ph.D. Research in Microelectronics and Electronics (PRIME) 2010, Berlin, Institute of Technology}, booktitle = {Conference on Ph.D. Research in Microelectronics and Electronics (PRIME) 2010, Berlin, Institute of Technology}, publisher = {IEEE}, address = {Piscataway, NJ}, isbn = {978-1-424-47905-4}, pages = {1 -- 4}, language = {en} } @misc{GerlichWeger, author = {Gerlich, Stefan and Weger, Peter}, title = {A Narrow-band 8.7 GHz SiGe HBT LNA with a Passive Frequency Selective Feedback}, series = {Frequenz}, volume = {66}, journal = {Frequenz}, number = {7-8}, issn = {0016-1136}, doi = {10.1515/freq-2012-0037}, pages = {183 -- 188}, abstract = {This paper presents a low noise amplifier (LNA) with differential output using a passive frequency selective feedback. The introduced feedback stabilizes the amplifier at lower frequencies and improves the gain in the desired frequency band. The LNA consists of two stages. Additionally, a buffer at the output is added for measurements. The amplifier was implemented in a 0.35 μm SiGe technology. For measurements the LNA was bonded to a substrate. A peak gain of 28.1 dB and a minimum noise figure of 2.2 dB at a supply voltage of 3 V were achieved.}, language = {en} } @misc{GerlichWeger, author = {Gerlich, Stefan and Weger, Peter}, title = {Highly Efficient Packaged 11-13 GHz Power Amplifier in SiGe-Technology With 37.3\% of PAE}, series = {IEEE Microwave and Wireless Components Letters}, volume = {23}, journal = {IEEE Microwave and Wireless Components Letters}, number = {10}, issn = {1531-1309}, doi = {10.1109/LMWC.2013.2278285}, pages = {539 -- 541}, abstract = {A power amplifier for a frequency range of 11-13 GHz that is incorporated in 0.35 μm SiGe-technology is presented in this letter. The two-stage push-pull amplifier uses monolithically integrated transformers for input and interstage matching and a monolithically integrated modified LC-balun as an output-matching network. For stabilization purposes and gain improvement in the operating frequency range a passive frequency selective feedback in parallel to the base-collector was introduced. The power amplifier is mounted on a 7 × 7 mm VQFN package. From a single 1.8 V voltage supply, the amplifier has a power-added efficiency of greater than 30\% from 11.2 to 13 GHz with a maximum of 37.3\% at 12.5 GHz. The maximum output power is 23.4 dBm (saturation), as measured in the continuous mode.}, language = {en} } @article{VasylyevWegerBakalskietal., author = {Vasylyev, Andriy and Weger, Peter and Bakalski, Winfried and Simb{\"u}rger, Werner}, title = {Fully-integrated 32 dBm, 1.5-2.9 GHz SiGe-bipolar power amplifier using power-combining transformer}, language = {de} } @inproceedings{WipfSorgeWeger, author = {Wipf, Christian and Sorge, Roland and Weger, Peter}, title = {Hybrid cascode with an isolated NLDMOS and HBT for X-Band power amplifier applications}, series = {Silicon Monolithic Integrated Circuits in RF Systems (SiRF), IEEE 11th Topical Meeting on, Phoenix, AZ, 2011}, booktitle = {Silicon Monolithic Integrated Circuits in RF Systems (SiRF), IEEE 11th Topical Meeting on, Phoenix, AZ, 2011}, publisher = {IEEE}, address = {Piscataway}, isbn = {978-1-4244-8060-9}, doi = {10.1109/SIRF.2011.5719310}, pages = {121 -- 124}, abstract = {A cascode amplifier stage with an isolated NLDMOS and SiGe:C HBT was demonstrated. The main advantages of that circuitry concept are a reduced capacitive portion of the input impedance and a significantly increased power gain in comparison to a single NLDMOS amplifier stage. Additionally a more stable input impedance for different RF input power levels can be obtained. The stable and less capacitive input impedance simplifies the design of integrated impedance matching networks. In a first feasibility study a circuit with a NLDMOS gate width of 90 μm showed a maximum gain of 18 dB and a maximum output power of 10 dBm at 11 GHz. To the authors knowledge the circuit concept of a cascode amplifier containing a HBT and an isolated NLDMOS is presented for the first time.}, language = {en} } @inproceedings{DebskiLangmannWegeretal., author = {Debski, Wojciech Andrzej and Langmann, U. and Weger, Peter and Mayr, P. and Matz, R.}, title = {Keramische System-in-Package-Technologie f{\"u}r 5GHz-Transceivermodul}, series = {Deutsche IMAPS-Konferenz 2005, 10. - 11.10.05, M{\"u}nchen}, booktitle = {Deutsche IMAPS-Konferenz 2005, 10. - 11.10.05, M{\"u}nchen}, publisher = {IMAPS Deutschland}, address = {M{\"u}nchen}, language = {de} } @inproceedings{BakalskiScholtzVasylyevetal., author = {Bakalski, Winfried and Scholtz, A. L. and Vasylyev, Andriy and Weger, Peter and Simb{\"u}rger, Werner and Th{\"u}ringer, R. and Wohlmuth, H.-D.}, title = {A Fully Integrated 7-18 GHz Power Amplifier with On-Chip Output Balun in 75 GHz-fT SiGe-Bipolar}, series = {Proceedings of the Bipolar/BiCMOS Circuits and Technology Meeting, Toulouse, France, 29 - 20 Sept. 2003, IEEE}, booktitle = {Proceedings of the Bipolar/BiCMOS Circuits and Technology Meeting, Toulouse, France, 29 - 20 Sept. 2003, IEEE}, publisher = {IEEE Operations Center}, address = {Piscataway, NJ}, isbn = {0-7803-7800-8}, pages = {61 -- 66}, language = {en} }