@misc{BertaudWalczykWalczyketal., author = {Bertaud, Thomas and Walczyk, Damian and Walczyk, Christian and Kubotsch, S. and Wenger, Christian and Schr{\"o}der, Thomas and Vall{\´e}e, Christophe and Gonon, P. and Mannequin, C. and Jousseaume, V. and Grampeix, Helen}, title = {Resistive Switching of HfO2-based MIM diodes: Impact of the Top Electrode Materials}, series = {Thin Solid Films}, volume = {520}, journal = {Thin Solid Films}, number = {14}, issn = {0040-6090}, pages = {4551 -- 4555}, language = {en} } @misc{BertaudWalczykSowinskaetal., author = {Bertaud, Thomas and Walczyk, Damian and Sowinska, Małgorzata and Wolansky, Dirk and Tillack, Bernd and Schoof, Gunther and Korolevych, R. and Wenger, Christian and Thiess, Sebastian and Schroeder, Thomas and Walczyk, Christian}, title = {HfO2-based RRAM for Embedded Nonvolatile Memory: From Materials Science to Integrated 1T1R RRAM Arrays}, series = {ECS transactions}, volume = {50}, journal = {ECS transactions}, number = {4}, issn = {1938-6737}, pages = {21 -- 26}, language = {en} } @misc{BertaudSowinskaWalczyketal., author = {Bertaud, Thomas and Sowinska, Małgorzata and Walczyk, Damian and Thiess, Sebastian and Walczyk, Christian and Gloskovski, A. and Drube, W. and Schroeder, Thomas}, title = {In-operando and non-destructive analysis of the resistive switching in the Ti/HfO2/TiN-based system by Hard X-ray Photoelectron Spectroscopy}, series = {Applied Physics Letters}, volume = {112}, journal = {Applied Physics Letters}, number = {4}, pages = {043506 -- 043511}, language = {en} } @misc{SowinskaBertaudWalczyketal., author = {Sowinska, Małgorzata and Bertaud, Thomas and Walczyk, Damian and Thiess, Sebastian and Schubert, Markus Andreas and Lukosius, Mindaugas and Drube, W. and Walczyk, Christian and Schr{\"o}der, Thomas}, title = {Hard X-ray Photoelectron Spectroscopy study of the electroforming in Ti/HfO2-based resistive switching structures}, series = {Applied Physics Letters}, volume = {100}, journal = {Applied Physics Letters}, number = {23}, issn = {0003-6951}, pages = {233509 -- 233514}, language = {en} } @misc{GrossiWalczykZambellietal., author = {Grossi, Alessandro and Walczyk, Damian and Zambelli, Cristian and Miranda, Enrique and Olivo, Piero and Stikanov, V. and Feriani, A. and Sune, J. and Schoof, Gunther and Kraemer, Rolf and Tillack, Bernd and Fox, A. and Schroeder, Thomas and Walczyk, Christian}, title = {Impact of Intercell and Intracell Variability on Forming and Switching Parameters in RRAM Arrays}, series = {IEEE Transaction on Electronic Devices}, volume = {62}, journal = {IEEE Transaction on Electronic Devices}, number = {8}, issn = {0018-9383}, doi = {10.1109/TED.2015.2442412}, pages = {2502 -- 2509}, language = {en} } @misc{NiuCalkaWalczyketal., author = {Niu, Gang and Calka, Pauline and Walczyk, Christian and Guha, Subhajit and Fraschke, Mirko and Fr{\"o}hlich, K. and Hamoumou, Philippe and Gautier, Brice and Alff, Lambert and Schr{\"o}der, Thomas}, title = {Geometric conductive filament confinement by nanotips for resistive switching of HfO₂-RAM devices with high performance}, series = {Scientific Reports}, volume = {6}, journal = {Scientific Reports}, number = {25757}, issn = {2045-2322}, language = {en} } @inproceedings{SeifarthWalczykLupinaetal., author = {Seifarth, Olaf and Walczyk, Christian and Lupina, Grzegorz and Zaumseil, Peter and Schmeißer, Dieter and M{\"u}ssig, Hans-Joachim and Schroeder, Thomas}, title = {The electronic band diagram of thin PrO2(111) / Pr-silicate buffers on Si(111) and its relevance to dielectric properties}, series = {Verhandlungen der Deutschen Physikalischen Gesellschaft, Reihe 6, Bd. 44}, booktitle = {Verhandlungen der Deutschen Physikalischen Gesellschaft, Reihe 6, Bd. 44}, publisher = {Deutsche Physikalische Gesellschaft}, address = {Bad Honnef}, issn = {0420-0195}, pages = {S. 136}, abstract = {Thin dielectric buffers of cubic PrO2(111) on Si(111) are ideally suited to integrate Ge onto Si by moderating the lattice mismatch between the materials. The leakage current across this dielectric buffer is strongly influenced by the electronic band diagram and defects inside the band gap. Therefore, we measured the band offsets, band gaps and defect positions by means of synchrotron radiation based photoemission spectroscopy techniques (XPS and XAS) with special emphasis on the Pr-silicate interface. In a next step we compare the spectroscopic data with information from dielectric studies, based on temperature dependent leakage current studies. We observe a close relation between dielectric properties and the electronic structure.}, language = {en} } @inproceedings{SeifarthWilkeWalczyketal., author = {Seifarth, Olaf and Wilke, A. and Walczyk, Christian and Dabrowski, Jarek Marek and Zaumseil, Peter and Schmeißer, Dieter and M{\"u}ssig, Hans-Joachim and Schroeder, Thomas}, title = {Band gap and electronic structure determination with XAS and UPS of thin Pr-oxide films on Si(111)}, series = {Proceedings of 15th Workshop on Dielectrics in Microelectronics, Bad Saarow, 23 - 25 June 2008, Bad Saarow (Berlin)}, booktitle = {Proceedings of 15th Workshop on Dielectrics in Microelectronics, Bad Saarow, 23 - 25 June 2008, Bad Saarow (Berlin)}, pages = {285 -- 286}, language = {en} } @inproceedings{SeifarthWalczykLupinaetal., author = {Seifarth, Olaf and Walczyk, Christian and Lupina, Grzegorz and Dabrowski, Jaroslaw and Weidner, G{\"u}nter and Zaumseil, Peter and Schmeißer, Dieter and Storck, Peter and M{\"u}ssig, Hans-Joachim and Schroeder, Thomas}, title = {On the electronic and dielectric characterisation of thin cubic PrO2 layers on Silicon}, series = {Verhandlungen der Deutschen Physikalischen Gesellschaft, Reihe 6, Bd. 43}, booktitle = {Verhandlungen der Deutschen Physikalischen Gesellschaft, Reihe 6, Bd. 43}, publisher = {Deutsche Physikalische Gesellschaft}, address = {Bad Honnef}, issn = {0420-0195}, pages = {S. 196}, abstract = {For the integration of 100 \% Ge onto the Si platform, a buffer oxide approach has been developed recently, using rare earth oxides to tune the lattice constant between the Si and the Ge. Among these buffer oxides, PrO2 is a prospective candidate with high quality crystalline growth on Si, moderated by an interfacial Pr-silicate between. In order to specify electronic properties of thin PrO2 and its interface on Si(111), especially the width of the band gap, we performed synchrotron radiation based XPS, UPS and XAS measurements at the U49/2 PGM 2 beamline at BESSY II and correlate the results with our structural characterisation performed by TEM and XRD. In order to evaluate the dielectric properties of thin PrO2 layers on Si(111), we performed temperature-, time-, voltage-, and layer thickness-dependent leakage current measurements (J-V). Here, we identified relaxation behaviour in the leakage current, successfully addressed to defect like states inside the Pr-silicate interface layer, corroborated by frequency dependent capacitance versus voltage (C-V) measurements.}, language = {en} }