@article{RudolphBehtashDoerneretal., author = {Rudolph, Matthias and Behtash, Reza and D{\"o}rner, Ralf and Hirche, Klaus and Wurfl, Joachim and Heinrich, Wolfgang and Tr{\"a}nkle, G{\"u}nther}, title = {Analysis of the Survivability of GaN Low-Noise Amplifiers}, language = {en} } @misc{KraemerLenkMaassdorfetal., author = {Kraemer, Thorsten and Lenk, Friedrich and Maaßdorf, Andre and W{\"u}rfl, Joachim and Tr{\"a}nkle, G{\"u}nther}, title = {High Yield Transferred Substrate InP DHBT}, series = {Indium Phosphide \& Related Materials, 2007, IPRM '07, IEEE 19th International Conference, Matsue, Japan, 14 - 18 May 2007}, journal = {Indium Phosphide \& Related Materials, 2007, IPRM '07, IEEE 19th International Conference, Matsue, Japan, 14 - 18 May 2007}, publisher = {IEEE}, address = {Piscataway, NJ}, isbn = {1-4244-0875-X}, doi = {10.1109/ICIPRM.2007.381210}, pages = {407 -- 408}, abstract = {A transferred substrate InP DHBT of 0.8 mum emitter width was developed. The transistors featured high yield and homogeneous device characteristics over the three inch wafer, with an average of ft = 300 GHz plusmn 3\%SD, fmax = 250 GHz plusmn 5\%SD at a breakdown voltage of BVceo = 6 V.}, language = {en} } @misc{SoniaRichterBrunneretal., author = {Sonia, G. and Richter, E. and Brunner, F. and Denker, A. and Lossy, R. and Lenk, Friedrich and Opitz-Coutureau, J. and Mai, M. and Schmidt, J. and Zeimer, U. and Wang, L. and Baskar, K. and Weyers, M. and W{\"u}rfl, Joachim and Tr{\"a}nkle, G{\"u}nther}, title = {High energy irradiation effects on AlGaN/GaN HFET devices}, series = {Semiconductor Science and Technology}, volume = {22}, journal = {Semiconductor Science and Technology}, number = {11}, issn = {0268-1242}, doi = {10.1088/0268-1242/22/11/007}, pages = {1220 -- 1224}, abstract = {The effect of proton, carbon, oxygen and krypton irradiation on AlGaN HFET devices has been studied. Irradiation was performed at 68 and 120 MeV with fluences in the range from 1 × 10^7 to 1 × 10^13 cm2 . Before and after irradiation, dc and pulsed I - V characteristics, loadpull and S -parameters of the AlGaN HFET devices were measured. A thick GaN reference layer was characterized by x-ray diffraction, photoluminescence and Hall measurements before and after irradiation. Proton, carbon and oxygen irradiation show no degradation in devices while krypton irradiation shows a small change at a fluence of 1 × 10 10 cm2 in the device characteristics. The device results are correlated with the thick GaN results.}, language = {en} }