@misc{AptePoddarRudolphetal., author = {Apte, Anisha M. and Poddar, Ajay K. and Rudolph, Matthias and Rohde, Ulrich L.}, title = {A Novel Low Phase Noise X-Band Oscillator}, series = {IEEE Microwave Magazine}, volume = {16}, journal = {IEEE Microwave Magazine}, number = {1}, issn = {1527-3342}, doi = {10.1109/MMM.2014.2367957}, pages = {127 -- 135}, language = {en} } @misc{ApteRohdePoddaretal., author = {Apte, Anisha M. and Rohde, Ulrich L. and Poddar, Ajay K. and Rudolph, Matthias}, title = {Optimizing Phase-Noise Performance: Theory and Design Techniques for a Crystal Oscillator}, series = {IEEE Microwave Magazine}, volume = {18}, journal = {IEEE Microwave Magazine}, number = {4}, issn = {1527-3342}, doi = {10.1109/MMM.2017.2679998}, pages = {108 -- 123}, language = {en} } @misc{GriebelRudolphRohde, author = {Griebel, Wolfgang and Rudolph, Matthias and Rohde, Ulrich L.}, title = {Added Noise in Oscillators Caused by the Transistor Base Emitter Breakdown Phenomenon}, series = {IETE Journal of Research}, journal = {IETE Journal of Research}, issn = {0974-780X}, doi = {10.1080/03772063.2020.1847702}, pages = {1 -- 11}, language = {en} } @book{VendelinPavioRohdeetal., author = {Vendelin, George D. and Pavio, Anthony M. and Rohde, Ulrich L. and Rudolph, Matthias}, title = {Microwave circuit design:using linear and nonlinear techniques}, edition = {Third edition}, publisher = {Wiley}, address = {Hoboken, N.J.}, isbn = {978-1-118-44975-2}, pages = {xix, 1174}, language = {en} } @misc{RudolphBeleniotisZervosetal., author = {Rudolph, Matthias and Beleniotis, Petros and Zervos, Christos and Rohde, Ulrich L. and Andrei, Cristina}, title = {Determining GaN HEMT trap models from MHz load-line measurement : a case study}, series = {2024 15th German Microwave Conference (GeMiC)}, journal = {2024 15th German Microwave Conference (GeMiC)}, publisher = {IEEE}, doi = {10.23919/GeMiC59120.2024.10485297}, pages = {29 -- 32}, language = {en} } @misc{KaredSilaghiRudolphetal., author = {Kared, Trusha and Silaghi, Helga and Rudolph, Matthias and Silaghi, Andrei and Rohde, Ulrich L.}, title = {Design of a fixed IF down-conversion double-balanced mixer for UHF band applications}, series = {Sensors}, volume = {25}, journal = {Sensors}, number = {3}, publisher = {MDPI}, address = {Basel}, issn = {1424-8220}, doi = {10.3390/s25030608}, pages = {1 -- 29}, abstract = {This paper presents a new SiGe HBT-based high dynamic range double-balanced down-conversion differential mixer. Operating within the 0.5 GHz to 1.8 GHz range, the suggested mixer is appropriate for a variety of applications, such as cellular base stations, satellite communication (SATCOM), and military radar. The down-conversion mixer is made up of a single-ended to a differential-balanced radiofrequency (RF) stage, a dual feedback linearization for the RF stage, a local oscillator (LO) balun, LO mixing cores, and a fixed intermediate frequency (IF)-tuned circuit connected between two outputs to serve as a load at 145 MHz. Compared to earlier research in the literature, the measured SSB noise figure is approximately 7 dB ± 0.4 dB, and the measured conversion gain is approximately 12 dB ± 1 dB for a full band of operation. The mixer achieves a good return loss of over 8 dB for an RF and LO port in the desired band and a measured return loss of over 18 dB at 145 MHz and IF frequency. Furthermore, the design achieved an RF-to-IF isolation of greater than 35 dB, LO feedthrough, and an LO leakage isolation of better than 50 dB. Lastly, the measured third-order intercept point was found to be +4.7 dBm, and the 1 dB compression point was approximately -8 dBm. These results demonstrate good linearity performance.}, language = {en} } @misc{BeleniotisAndreiZervosetal., author = {Beleniotis, Petros and Andrei, Cristina and Zervos, Christos and Rohde, Ulrich L. and Rudolph, Matthias}, title = {GaN trap model extraction based on MHz load-line measurements}, series = {2025 IEEE/MTT-S International Microwave Symposium - IMS 2025}, journal = {2025 IEEE/MTT-S International Microwave Symposium - IMS 2025}, publisher = {IEEE}, address = {Piscataway, NJ}, isbn = {979-8-3315-1409-9}, doi = {10.1109/IMS40360.2025.11104000}, pages = {1059 -- 1062}, abstract = {The extraction of model parameters for GaN HEMTs is a challenging task that typically requires a comprehensive series of pulsed measurements to ensure that the resulting model is both accurate and convergence-stable. This study introduces, for the first time, an extraction procedure that utilizes I-V curves generated by MHz load-line measurements, effectively replacing the complex and time-intensive pulsed measurements. A drain-lag model extraction was based on load-line I-V curves and validated along with a pulsed-IV-based model through RF large-signal simulations, demonstrating excellent performance.}, language = {en} } @misc{BeleniotisAndreiRohdeetal., author = {Beleniotis, Petros and Andrei, Cristina and Rohde, Ulrich L. and Rudolph, Matthias}, title = {Determining GaN HEMT trap models from MHz load-line measurement — synthesis and evaluation}, series = {2025 16th German Microwave Conference (GeMiC)}, journal = {2025 16th German Microwave Conference (GeMiC)}, publisher = {IEEE}, address = {Piscataway, NJ}, isbn = {978-3-9820397-4-9}, doi = {10.23919/GeMiC64734.2025.10978988}, pages = {451 -- 454}, abstract = {The modeling of GaN HEMTs is closely associated with pulsed measurements, which are essential for extracting model parameters related to trapping and thermal effects. However, these characterizations are often hindered by high costs and the time-intensive nature of the measurement process. In this paper, we present and evaluate a novel approach for trap model extraction that utilizes MHz load-line measurements. Our analysis includes a comparative study of the measurements and a demonstration of modeling based on the proposed methodology.}, language = {en} }