@misc{BignardiLizzitBanaetal., author = {Bignardi, Luca and Lizzit, Daniel and Bana, Harsh and Travaglia, Elisabetta and Lacovig, Paolo and Sanders, Charlotte E. and Dendzik, Maciej and Michiardi, Matteo and Bianchi, Marco and Ewert, Moritz and Buß, Lars and Falta, Jens and Flege, Jan Ingo and Baraldi, Alessandro and Larciprete, Rosanna and Hofmann, Philip and Lizzit, Silvano}, title = {Growth and structure of singly oriented single-layer tungsten disulfide on Au(111)}, series = {Physical Review Materials}, volume = {3}, journal = {Physical Review Materials}, number = {1}, issn = {2475-9953}, doi = {10.1103/PhysRevMaterials.3.014003}, pages = {8}, abstract = {A singly oriented, single layer of tungsten disulfide (WS2) was epitaxially grown on Au(111) and characterized at the nanoscale by combining photoelectron spectroscopy, photoelectron diffraction, and low-energy electron microscopy. Fast x-ray photoelectron spectroscopy revealed that the growth of a single crystalline orientation is triggered by choosing a low W evaporation rate and performing the process with a high temperature of the substrate. Information about the single orientation of the layer was obtained by acquiring x-ray photoelectron diffraction patterns, revealing a 1H polytype for the WS2 layer and, moreover, determining the structural parameters and registry with the substrate. The distribution, size, and orientation of the WS2 layer were further ascertained by low-energy electron microscopy.}, language = {en} }