@misc{SoniaRichterBrunneretal., author = {Sonia, G. and Richter, E. and Brunner, F. and Denker, A. and Lossy, R. and Lenk, Friedrich and Opitz-Coutureau, J. and Mai, M. and Schmidt, J. and Zeimer, U. and Wang, L. and Baskar, K. and Weyers, M. and W{\"u}rfl, Joachim and Tr{\"a}nkle, G{\"u}nther}, title = {High energy irradiation effects on AlGaN/GaN HFET devices}, series = {Semiconductor Science and Technology}, volume = {22}, journal = {Semiconductor Science and Technology}, number = {11}, issn = {0268-1242}, doi = {10.1088/0268-1242/22/11/007}, pages = {1220 -- 1224}, abstract = {The effect of proton, carbon, oxygen and krypton irradiation on AlGaN HFET devices has been studied. Irradiation was performed at 68 and 120 MeV with fluences in the range from 1 × 10^7 to 1 × 10^13 cm2 . Before and after irradiation, dc and pulsed I - V characteristics, loadpull and S -parameters of the AlGaN HFET devices were measured. A thick GaN reference layer was characterized by x-ray diffraction, photoluminescence and Hall measurements before and after irradiation. Proton, carbon and oxygen irradiation show no degradation in devices while krypton irradiation shows a small change at a fluence of 1 × 10 10 cm2 in the device characteristics. The device results are correlated with the thick GaN results.}, language = {en} }