@misc{BertaudWalczykSowinskaetal., author = {Bertaud, Thomas and Walczyk, Damian and Sowinska, Małgorzata and Wolansky, Dirk and Tillack, Bernd and Schoof, Gunther and Korolevych, R. and Wenger, Christian and Thiess, Sebastian and Schroeder, Thomas and Walczyk, Christian}, title = {HfO2-based RRAM for Embedded Nonvolatile Memory: From Materials Science to Integrated 1T1R RRAM Arrays}, series = {ECS transactions}, volume = {50}, journal = {ECS transactions}, number = {4}, issn = {1938-6737}, pages = {21 -- 26}, language = {en} } @misc{SchmeisserPresselYamamotoetal., author = {Schmeißer, Dieter and Pressel, Klaus and Yamamoto, Yuji and Tillack, Bernd and Kr{\"u}ger, D.}, title = {Ge instabilities near interfaces in Si-SiGe-Si heterostructures}, series = {Materials Science \& Engineering B}, volume = {101}, journal = {Materials Science \& Engineering B}, number = {1-3}, issn = {0921-5107}, pages = {208 -- 211}, abstract = {Compositional characterization of interfaces in Si-cap/SixGe1-x/Si heterostructures is an important topic in SiGe based advanced microelectronics and in quantum wells. Extremely high depth resolution is required to detect and optimize near-interface compositional gradients which are crucial for high circuit performance. We report on non-destructive, high-resolution, near-interface depth profiling using SR photoelectron spectroscopy at an undulator beamline. We measured the Ge content at the SixGe1-x interface towards the native SiO2 layer and investigated the influence of additional (1nm and 2nm) Si capping layers (Si-cap). For the uncapped samples we found near the oxide/ SiGe interface region a strong mixing of Ge-oxides and SiOx. This indicates a high instability of the Ge atoms at those interfaces while silicon capped (1nm, 2nm) SixGe1-x films are more stable. We detect sharp Ge concentration gradients within the first 1nm at the Si/SixGe1-x interface. These results open new possibilities for Ge profile optimization in Si-cap/SixGe1-x/Si heterostructures. In the Ge3d spectra we differentiate the Ge atoms to occupy three different lattice sites and are able to follow their relative occupation within the Ge gradient.}, language = {en} } @misc{ZaumseilYamamotoBaueretal., author = {Zaumseil, Peter and Yamamoto, Yuji and Bauer, Joachim and Schubert, Markus Andreas and Matejova, Jana and Kozłowski, Grzegorz and Schr{\"o}der, Thomas and Tillack, Bernd}, title = {Preparation and Characterization of Ge Epitaxially Grown on Nano-structured Periodic Si Pillars and Bars on Si(001) Substrate}, series = {Thin Solid Films}, volume = {520}, journal = {Thin Solid Films}, number = {8}, issn = {0040-6090}, doi = {10.1016/j.tsf.2011.10.178}, pages = {3240 -- 3244}, language = {en} } @misc{KozłowskiZaumseilSchubertetal., author = {Kozłowski, Grzegorz and Zaumseil, Peter and Schubert, Markus Andreas and Yamamoto, Yuji and Sch{\"u}lli, Tobias U. and Tillack, Bernd and Schroeder, Thomas}, title = {Growth and relaxation processes in Ge nanocrystals on free-standing Si(001) nanopillars}, series = {Nanotechnology}, volume = {23}, journal = {Nanotechnology}, number = {11}, issn = {0957-4484}, doi = {10.1088/0957-4484/23/11/115704}, pages = {115704 -- 115711}, language = {en} } @misc{GrossiWalczykZambellietal., author = {Grossi, Alessandro and Walczyk, Damian and Zambelli, Cristian and Miranda, Enrique and Olivo, Piero and Stikanov, V. and Feriani, A. and Sune, J. and Schoof, Gunther and Kraemer, Rolf and Tillack, Bernd and Fox, A. and Schroeder, Thomas and Walczyk, Christian}, title = {Impact of Intercell and Intracell Variability on Forming and Switching Parameters in RRAM Arrays}, series = {IEEE Transaction on Electronic Devices}, volume = {62}, journal = {IEEE Transaction on Electronic Devices}, number = {8}, issn = {0018-9383}, doi = {10.1109/TED.2015.2442412}, pages = {2502 -- 2509}, language = {en} } @misc{CapelliniKozłowskiYamamotoetal., author = {Capellini, Giovanni and Kozłowski, Grzegorz and Yamamoto, Yuji and Lisker, Marco and Tillack, Bernd and Ghrib, A. and Kersauson, M. de and El Kurdi, M. and Boucaud, P. and Schroeder, Thomas}, title = {Tensile strained Ge layers obtained via Si-CMOS compatible approach}, series = {Journal of Applied Physics}, volume = {113}, journal = {Journal of Applied Physics}, number = {1}, pages = {013513-1 -- 013513-6}, language = {en} } @misc{ZaumseilKozłowskiSchubertetal., author = {Zaumseil, Peter and Kozłowski, Grzegorz and Schubert, Markus Andreas and Yamamoto, Yuji and Bauer, J. and Sch{\"u}lli, Tobias U. and Tillack, Bernd and Schroeder, Thomas}, title = {The role of SiGe buffer in growth and relaxation of Ge on free-standing Si(001) nanopillars}, series = {Nanotechnology}, volume = {23}, journal = {Nanotechnology}, number = {35}, issn = {1361-6528}, pages = {355706}, language = {en} } @misc{BauerYamamotoZaumseiletal., author = {Bauer, J. and Yamamoto, Yuji and Zaumseil, Peter and Fursenko, Oksana and Schulz, K. and Kozłowski, Grzegorz and Schubert, Markus Andreas and Schroeder, Thomas and Tillack, Bernd}, title = {Nanostructured Silicon for Ge Nanoheteroepitaxy}, series = {Microelectronics Engineering}, volume = {97}, journal = {Microelectronics Engineering}, issn = {0167-9317}, pages = {169 -- 172}, language = {en} } @misc{SkibitzkiHatamiYamamotoetal., author = {Skibitzki, Oliver and Hatami, Fariba and Yamamoto, Yuji and Zaumseil, Peter and Trampert, A. and Schubert, Markus Andreas and Tillack, Bernd and Schroeder, Thomas}, title = {GaP collector development for SiGe HBT performance increase: A heterostructure growth study}, series = {Journal of Applied Physics}, volume = {111}, journal = {Journal of Applied Physics}, number = {7}, issn = {0021-8979}, doi = {10.1063/1.3701583}, pages = {073515 -- 073515-9}, language = {en} } @misc{ZaumseilKozłowskiYamamotoetal., author = {Zaumseil, Peter and Kozłowski, Grzegorz and Yamamoto, Yuji and Bauer, J. and Schubert, Markus Andreas and Sch{\"u}lli, Tobias U. and Tillack, Bernd and Schroeder, Thomas}, title = {Compliant Si nanostructures on SOI for Ge nanoheteroepitaxy - a case study for lattice mismatched semiconductor integration on Si(001)}, series = {Journal of Applied Physics}, volume = {112}, journal = {Journal of Applied Physics}, number = {4}, issn = {0021-8979}, pages = {043506 -- 043511}, language = {en} } @misc{ZaumseilYamamotoSchubertetal., author = {Zaumseil, Peter and Yamamoto, Yuji and Schubert, Markus Andreas and Schr{\"o}der, Thomas and Tillack, Bernd}, title = {Heteroepitaxial Growth of Ge on compliant strained nano-structured Si lines and dots on (001) SOI substrates}, series = {Thin Solid Films}, volume = {557}, journal = {Thin Solid Films}, issn = {0040-6090}, pages = {50 -- 54}, language = {en} }