@misc{GrossiWalczykZambellietal., author = {Grossi, Alessandro and Walczyk, Damian and Zambelli, Cristian and Miranda, Enrique and Olivo, Piero and Stikanov, V. and Feriani, A. and Sune, J. and Schoof, Gunther and Kraemer, Rolf and Tillack, Bernd and Fox, A. and Schroeder, Thomas and Walczyk, Christian}, title = {Impact of Intercell and Intracell Variability on Forming and Switching Parameters in RRAM Arrays}, series = {IEEE Transaction on Electronic Devices}, volume = {62}, journal = {IEEE Transaction on Electronic Devices}, number = {8}, issn = {0018-9383}, doi = {10.1109/TED.2015.2442412}, pages = {2502 -- 2509}, language = {en} } @misc{ZoellnerRichardChahineetal., author = {Z{\"o}llner, Marvin Hartwig and Richard, Marie-Ingrid and Chahine, Gilbert A. and Zaumseil, Peter and Reich, Christian and Capellini, Giovanni and Montalenti, Francesco and Marzegalli, Anna and Xie, Ya-Hong and Sch{\"u}lli, Tobias U. and H{\"a}berlen, Maik and Storck, Peter and Schroeder, Thomas}, title = {Imaging structure and composition homogeneity of 300 mm SiGe virtual substrates for advanced CMOS applications by scanning X-ray diffraction microscopy}, series = {ACS Applied Materials and Interfaces}, volume = {7}, journal = {ACS Applied Materials and Interfaces}, number = {17}, issn = {1944-8252}, doi = {10.1021/am508968b}, pages = {9031 -- 9037}, language = {en} } @misc{ZaumseilYamamotoSchubertetal., author = {Zaumseil, Peter and Yamamoto, Yuji and Schubert, M. and Capellini, Giovanni and Skibitzki, Oliver and Z{\"o}llner, Marvin Hartwig and Schroeder, Thomas}, title = {Tailoring the strain in Si nano-structures for defect-free epitaxial Ge overgrowth}, series = {Nanotechnology}, volume = {26}, journal = {Nanotechnology}, number = {35}, issn = {1361-6528}, doi = {10.1088/0957-4484/26/35/355707}, pages = {355707}, language = {en} } @misc{SchaeferRahmanizadehBihlmayeretal., author = {Sch{\"a}fer, Anna and Rahmanizadeh, K. and Bihlmayer, G. and Luysberg, Martina and Wendt, Fabian and Besmehn, Astrid and Fox, A. and Schnee, M. and Niu, Gang and Schroeder, Thomas and Mantl, Siegfried and Hartdegen, Hilde and Mikulics, Martin and Schubert, J{\"u}rgen}, title = {Polymorphous GdScO3 as high permittivity dielectric}, series = {Journal of Alloy and Compunds}, volume = {651}, journal = {Journal of Alloy and Compunds}, issn = {0925-8388}, doi = {10.1016/j.jallcom.2015.08.135}, pages = {514 -- 520}, language = {en} } @misc{SalvalaglioBergamaschiniIsaetal., author = {Salvalaglio, Marco and Bergamaschini, Roberto and Isa, Fabio and Scaccabarozi, Andrea and Isella, Giovanni and Backofen, Rainer and Voigt, Axel and Montalenti, Francesco and Capellini, Giovanni and Marzegalli, Anna and Schroeder, Thomas and K{\"a}nel, Hans von and Miglio, Leo}, title = {Engineering coalescence by annealing of 3D Ge microstructures into high-qualtiy suspended layers on Si}, series = {ACS Applied Materials and Interfaces}, volume = {7}, journal = {ACS Applied Materials and Interfaces}, number = {34}, issn = {1944-8244}, doi = {10.1021/acsami.5b05054}, pages = {19219 -- 19225}, language = {en} } @inproceedings{LupinaSchroederDabrowskietal., author = {Lupina, Grzegorz and Schroeder, Thomas and Dabrowski, Jarek Marek and Schmeißer, Dieter and M{\"u}ssig, Hans-Joachim}, title = {Ti-doping of Pr silicate layers for high-k dielectrics applications}, series = {Verhandlungen der Deutschen Physikalischen Gesellschaft}, booktitle = {Verhandlungen der Deutschen Physikalischen Gesellschaft}, publisher = {Deutsche Physikalische Gesellschaft}, address = {Bad Honnef}, abstract = {Near-term downscaling of the metal-oxide-semiconductor field-effect transistors (MOSFETs) requires the replacement of the SiO2 gate oxide with a material having a higher dielectric constant. Recent studies indicate that silicate materials are the most promising candidates; among them are Pr silicates. Applying a combination of x-ray photoelectron spectroscopy (XPS), electrical measurements (C-V), and ab initio calculations, we investigated the effect of thin Ti doping on the structural and electrical properties of the gate stacks composed of a Pr silicate film and a SiO2-based interfacial buffer layer. Metallic Ti was deposited at room temperature after the formation of the Pr silicate dielectric. The resulting layered structures were annealed under ultra-high vacuum (UHV) at various temperatures between 70∘C and 880∘C. XPS indicates that the evaporated layer preserves its metallic character over the whole range of UHV annealing temperatures. Synchrotron radiation XPS at BESSY II shows that large amounts of Ti atoms incorporated into the Pr silicate remain metallic even after air exposure at room temperature. Annealing in nitrogen ambient at 300∘C leads to the oxidation of these atoms so that a mixed Pr:Ti silicate is formed. We show that the so formed dielectrics exhibit an improved equivalent oxide thickness and a reduced density of interface states.}, language = {en} } @misc{YangMazetOkatanetal., author = {Yang, Sang Mo and Mazet, Lucie and Okatan, M. Baris and Jesse, Stephen and Niu, Gang and Schroeder, Thomas and Schamm-Chardon, Sylvie and Dubourdieu, Catherine and Baddorf, Arthur P. and Kalinin, Sergei V.}, title = {Decoupling indirect topographic cross-talk in band excitation piezoresponse force microscopy imaging and spectroscopy}, series = {Applied Physics Letters}, volume = {108}, journal = {Applied Physics Letters}, number = {25}, issn = {1077-3118}, doi = {10.1063/1.4954276}, pages = {252902}, language = {en} } @misc{SchlykowKlesseNiuetal., author = {Schlykow, Viktoria and Klesse, Wolfgang Matthias and Niu, Gang and Taoka, Noriyuki and Yamamoto, Yuji and Skibitzki, Oliver and Barget, M. R. and Zaumseil, Peter and K{\"a}nel, Hans von and Schubert, Markus Andreas and Capellini, Giovanni and Schroeder, Thomas}, title = {Selective growth of fully relaxed GeSn nano-islands by nanoheteroepitaxy on patterned Si(001)}, series = {Applied Physics Letters}, volume = {109}, journal = {Applied Physics Letters}, number = {20}, issn = {1077-3118}, doi = {10.1063/1.4967500}, pages = {202102}, language = {en} } @misc{SolanDirkmannHansenetal., author = {Solan, Enver and Dirkmann, Sven and Hansen, Mirko and Schroeder, Dietmar and Kohlstedt, Hermann and Ziegler, Martin and Mussenbrock, Thomas and Ochs, Karlheinz}, title = {An Enhanced Lumped Element Electrical Model of the Double Barrier Memristive Device}, series = {Journal of physics : D, Applied physics}, volume = {50}, journal = {Journal of physics : D, Applied physics}, number = {19}, doi = {10.1088/1361-6463/aa69ae}, pages = {10}, language = {en} } @misc{SchlykowManganelliRoemeretal., author = {Schlykow, Viktoria and Manganelli, Constanza Lucia and R{\"o}mer, Friedhard and Clausen, Caterina J. and Augel, Lion and Schulze, J{\"o}rg and Katzer, Jens and Schubert, Michael Andreas and Witzigmann, Bernd and Schroeder, Thomas and Capellini, Giovanni and Fischer, Inga Anita}, title = {Ge(Sn) nano-island/Si heterostructure photodetectors with plasmonic antennas}, series = {Nanotechnology}, volume = {31}, journal = {Nanotechnology}, number = {34}, issn = {1361-6528}, doi = {10.1088/1361-6528/ab91ef}, pages = {11}, language = {en} } @misc{BeckerStorckLiuetal., author = {Becker, L. and Storck, Peter and Liu, Y. and Schwalb, G. and Schroeder, Thomas and Fischer, Inga Anita and Albrecht, M.}, title = {Optimizing misfit dislocation glide kinetics for enhanced threading dislocation density reduction in Si1- xGex/Si (001) layers through dynamic growth rate control}, series = {Journal of Applied Physics}, volume = {135}, journal = {Journal of Applied Physics}, number = {20}, issn = {0021-8979}, doi = {10.1063/5.0204318}, pages = {10}, language = {en} }