@misc{StrobelAlvaradoChavarinLeszczynskietal., author = {Strobel, Carsten and Alvarado Chavarin, Carlos and Leszczynski, Sebastian and Richter, Karola and Knaut, Martin and Reif, Johanna and V{\"o}lkel, Sandra and Albert, Matthias and Wenger, Christian and Bartha, Johann Wolfgang and Mikolajick, Thomas}, title = {Improved Graphene-base Heterojunction Transistor with Different Collector Semi-conductors for High-frequency Applications}, series = {Advanced Materials Letters}, volume = {13}, journal = {Advanced Materials Letters}, number = {1}, issn = {0976-3961}, doi = {10.5185/amlett.2022.011688}, abstract = {A new kind of transistor device with a graphene monolayer embedded between two n-type silicon layers is fabricated and characterized. The device is called graphene-base heterojunction transistor (GBHT). The base-voltage controls the current of the device flowing from the emitter via graphene to the collector. The transit time for electrons passing by the ultrathin graphene layer is extremely short which makes the device very promising for high frequency RF-electronics. The output current of the device is saturated and clearly modulated by the base voltage. Further, the silicon collector of the GBHT is replaced by germanium to improve the device performance. This enabled the collector current to be increased by almost three orders of magnitude. Also, the common-emitter current gain (Ic/Ib) increased from 10-3 to approximately 0.3 for the newly designed device. However, the ON-OFF ratio of the improved germanium based GBHT has so far been rather low. Further optimizations are necessary in order to fully exploit the potential of the graphene-base heterojunction transistor.}, language = {en} } @misc{StrobelAlvaradoChavarinRichteretal., author = {Strobel, Carsten and Alvarado Chavarin, Carlos and Richter, Karola and Knaut, Martin and Reif, Johanna and Völkel, Sandra and Jahn, Andreas and Albert, Matthias and Wenger, Christian and Kirchner, Robert and Bartha, Johann Wolfgang and Mikolajick, Thomas}, title = {Novel Graphene Adjustable-Barrier Transistor with Ultra-High Current Gain}, series = {ACS Applied Materials \& Interfaces}, volume = {14}, journal = {ACS Applied Materials \& Interfaces}, number = {34}, issn = {1944-8244}, doi = {10.1021/acsami.2c10634}, pages = {39249 -- 39254}, abstract = {A graphene-based three terminal barristor device was proposed to overcome the low on/off ratios and insufficient current saturation of conventional graphene field effect transistors. In this study, we fabricated and analyzed a novel graphene-based transistor, which resembles the structure of the barristor but uses a different operating condition. This new device, termed graphene adjustable-barriers transistor (GABT), utilizes a semiconductor-based gate rather than a metal-insulator gate structure to modulate the device currents. The key feature of the device is the two graphene-semiconductor Schottky barriers with different heights that are controlled simultaneously by the gate voltage. Due to the asymmetry of the barriers, the drain current exceeds the gate current by several orders of magnitude. Thus, the GABT can be considered an amplifier with an alterable current gain. In this work, a silicon-graphene-germanium GABT with an ultra-high current gain (ID/IG up to 8 × 106) was fabricated, and the device functionality was demonstrated. Additionally, a capacitance model is applied to predict the theoretical device performance resulting in an on-off ratio above 106, a swing of 87 mV/dec, and a drivecurrent of about 1 × 106 A/cm2.}, language = {en} } @misc{StrobelAlvaradoChavarinKnautetal., author = {Strobel, Carsten and Alvarado Chavarin, Carlos and Knaut, Martin and V{\"o}lkel, Sandra and Albert, Matthias and Hiess, Andre and Max, Benjamin and Wenger, Christian and Kirchner, Robert and Mikolajick, Thomas}, title = {High Gain Graphene Based Hot Electron Transistor with Record High Saturated Output Current Density}, series = {Advanced Electronic Materials}, volume = {10}, journal = {Advanced Electronic Materials}, number = {2}, issn = {2199-160X}, doi = {10.1002/aelm.202300624}, abstract = {Hot electron transistors (HETs) represent an exciting frontier in semiconductor technology, holding the promise of high-speed and high-frequency electronics. With the exploration of two-dimensional materials such as graphene and new device architectures, HETs are poised to revolutionize the landscape of modern electronics. This study highlights a novel HET structure with a record output current density of 800 A/cm² and a high current gain α, fabricated using a scalable fabrication approach. The HET structure comprises two-dimensional hexagonal boron nitride (hBN) and graphene layers wet transferred to a germanium substrate. The combination of these materials results in exceptional performance, particularly in terms of the highly saturated output current density. The scalable fabrication scheme used to produce the HET opens up opportunities for large-scale manufacturing. This breakthrough in HET technology holds promise for advanced electronic applications, offering high current capabilities in a practical and manufacturable device.}, language = {en} } @misc{StrobelAlvaradoChavarinKnautetal., author = {Strobel, Carsten and Alvarado Chavarin, Carlos and Knaut, Martin and Albert, Matthias and Heinzig, Andr{\´e} and Gummadi, Likhith and Wenger, Christian and Mikolajick, Thomas}, title = {p-Type Schottky contacts for graphene adjustable-Barrier phototransistors}, series = {Nanomaterials}, volume = {14}, journal = {Nanomaterials}, number = {13}, editor = {Giannazzo, Filippo and Agnello, Simonpietro and Seravalli, Luca and Bondino, Federica}, publisher = {MDPI}, issn = {2079-4991}, doi = {10.3390/nano14131140}, abstract = {The graphene adjustable-barriers phototransistor is an attractive novel device for potential high speed and high responsivity dual-band photodetection. In this device, graphene is embedded between the semiconductors silicon and germanium. Both n-type and p-type Schottky contacts between graphene and the semiconductors are required for this device. While n-type Schottky contacts are widely investigated, reports about p-type Schottky contacts between graphene and the two involved semiconductors are scarce. In this study, we demonstrate a p-type Schottky contact between graphene and p-germanium. A clear rectification with on-off ratios of close to 10 3 (±5 V) and a distinct photoresponse at telecommunication wavelengths in the infrared are achieved. Further, p-type silicon is transferred to or deposited on graphene, and we also observe rectification and photoresponse in the visible range for some of these p-type Schottky junctions. These results are an important step toward the realization of functional graphene adjustable-barrier phototransistors.}, language = {en} } @misc{StrobelAlvaradoChavarinVoelkeletal., author = {Strobel, Carsten and Alvarado Chavarin, Carlos and V{\"o}lkel, Sandra and Jahn, Andreas and Hiess, Andre and Knaut, Martin and Albert, Matthias and Wenger, Christian and Steinke, Olaff and Stephan, Ulf and R{\"o}hlecke, S{\"o}ren and Mikolajick, Thomas}, title = {Enhanced Electrical Properties of Optimized Vertical Graphene-Base Hot Electron Transistors}, series = {ACS Applied Electronic Materials}, volume = {5}, journal = {ACS Applied Electronic Materials}, number = {3}, issn = {2637-6113}, doi = {10.1021/acsaelm.2c01725}, pages = {1670 -- 1675}, abstract = {The arrival of high-mobility two-dimensional materials like graphene leads to the renaissance of former vertical semiconductor-metal-semiconductor (SMS) hot electron transistors. Because of the monolayer thickness of graphene, improved SMS transistors with a semimetallic graphene-base electrode are now feasible for high-frequency applications. In this study we report about a device that consists of amorphous silicon, graphene, and crystalline silicon. For the first time, this device is fabricated by a four-mask lithography process which leads to significant improvements in the device performance. A strongly increased common-emitter current gain of 2\% could be achieved while the on-off ratio improved to 1.6 × 105, which is already higher than predicted theoretically. This could be mainly attributed to better interface characteristics and decreased lateral dimensions of the devices. A cutoff frequency of approximately 26 MHz could be forecasted based on the DC measurements of the device.}, language = {en} } @misc{StrobelAlvaradoChavarinWengeretal., author = {Strobel, Carsten and Alvarado Chavarin, Carlos and Wenger, Christian and Albert, Matthias and Mikolajick, Thomas}, title = {Vertical Graphene-Based Transistors for Power Electronics, Optoelectronics and Radio-Frequency Applications}, series = {IEEE Nanotechnology Materials and Devices Conference (NMDC), Paestum, Italy, 22-25 October 2023}, journal = {IEEE Nanotechnology Materials and Devices Conference (NMDC), Paestum, Italy, 22-25 October 2023}, publisher = {Institute of Electrical and Electronics Engineers (IEEE)}, isbn = {979-8-3503-3546-0}, issn = {2473-0718}, doi = {10.1109/NMDC57951.2023.10344102}, pages = {196 -- 201}, abstract = {The combination of two-dimensional materials, such as graphene, with established thin films offers great opportunities for enabling next-generation vertical transistors for various applications. This paper gives a brief overview about different vertical transistor concepts using twodimensional materials proposed so far, e.g. the hot electron transistor and the Barristor. With the arrival of twodimensional materials, the hot electron transistor also experienced a revival with predicted cut-off frequencies in the THz range. The Barristor overcomes the weak current saturation of lateral graphene field-effect transistors and high on-off ratios up to 107 were demonstrated, which are suitable parameters for logic applications. By combining a semiconductor-graphene-semiconductor design of the simplest hot electron transistor with the Barristor operating principle a new device, called graphene adjustable-barriers transistor, can be realized. This new device concept provides the potential for RF, power electronics, and optoelectronic applications.}, language = {en} } @misc{StrobelChavarinKnautetal., author = {Strobel, Carsten and Chavarin, Carlos A. and Knaut, Martin and Wenger, Christian and Heinzig, Andr{\´e} and Mikolajick, Thomas}, title = {Demonstration of a graphene adjustable-barriers phototransistor with tunable ultra-high responsivity}, series = {Advanced Optical Materials}, journal = {Advanced Optical Materials}, publisher = {Wiley-VCH GmbH}, address = {Weinheim}, issn = {2195-1071}, doi = {10.1002/adom.202500344}, pages = {1 -- 9}, abstract = {The development of high-speed dual-band photodetectors with high responsivity is important for several applications such as optical communication, biomedical imaging or spectroscopy. In this work, a phototransistor with ultra-high responsivity is demonstrated, which potentially also allows for very high bandwidths. The device is called graphene adjustable-barriers phototransistor and is potentially capable for dual-band detection in the visible-infrared (VIS-IR) range. A material combination of intrinsic hydrogenated amorphous silicon, graphene, and n-type germanium (n-Ge) is used for the demonstrator. The device operation is based on the light induced modulation of the graphene Fermi energy level and Schottky barrier heights. For the first time, the functional mechanism of the device is successfully demonstrated in the VIS range with responsivities exceeding 107 A/W at a gate voltage of 20V. The bandwidth of the device is 1.2 kHz and is so far limited by the defective gate material hydrogenated amorphous silicon and relaxed feature sizes of the demonstrator. These results are an important step toward a new generation of high-responsivity high-speed photo detection devices.}, language = {en} }