@inproceedings{WipfSorgeWeger, author = {Wipf, Christian and Sorge, Roland and Weger, Peter}, title = {Hybrid cascode with an isolated NLDMOS and HBT for X-Band power amplifier applications}, series = {Silicon Monolithic Integrated Circuits in RF Systems (SiRF), IEEE 11th Topical Meeting on, Phoenix, AZ, 2011}, booktitle = {Silicon Monolithic Integrated Circuits in RF Systems (SiRF), IEEE 11th Topical Meeting on, Phoenix, AZ, 2011}, publisher = {IEEE}, address = {Piscataway}, isbn = {978-1-4244-8060-9}, doi = {10.1109/SIRF.2011.5719310}, pages = {121 -- 124}, abstract = {A cascode amplifier stage with an isolated NLDMOS and SiGe:C HBT was demonstrated. The main advantages of that circuitry concept are a reduced capacitive portion of the input impedance and a significantly increased power gain in comparison to a single NLDMOS amplifier stage. Additionally a more stable input impedance for different RF input power levels can be obtained. The stable and less capacitive input impedance simplifies the design of integrated impedance matching networks. In a first feasibility study a circuit with a NLDMOS gate width of 90 μm showed a maximum gain of 18 dB and a maximum output power of 10 dBm at 11 GHz. To the authors knowledge the circuit concept of a cascode amplifier containing a HBT and an isolated NLDMOS is presented for the first time.}, language = {en} }