@misc{HenkelSohalTorcheetal., author = {Henkel, Karsten and Sohal, Rakesh and Torche, Mohamed and Paloumpa, Ioanna and M{\"u}ller, Klaus and Hoffmann, Patrick and Schmeißer, Dieter}, title = {Grenzfl{\"a}chenoptimierung f{\"u}r funktionale D{\"u}nnschichtsysteme: Oxide und Polymere}, series = {Forum der Forschung}, volume = {9}, journal = {Forum der Forschung}, number = {18}, issn = {0947-6989}, pages = {49 -- 56}, language = {de} } @misc{HenkelTorcheSohaletal., author = {Henkel, Karsten and Torche, Mohamed and Sohal, Rakesh and Karavaev, Konstantin and Burkov, Yevgen and Schwiertz, Carola and Schmeißer, Dieter}, title = {Pr-O-Al-N dielectrics for metal insulator semiconductor stacks}, language = {en} } @article{SohalLupinaLippertetal., author = {Sohal, Rakesh and Lupina, Grzegorz and Lippert, Gunther and Wenger, Christian and Seifarth, Olaf and Schr{\"o}der, Thomas and Tallarida, Massimo and Schmeißer, Dieter}, title = {Interface chemistry of high-k PrxAl2-xO3 (x=2-0) dielectrics on TiN for dynamic random access memory applications}, language = {en} } @inproceedings{HenkelBurkovBergholzetal., author = {Henkel, Karsten and Burkov, Yevgen and Bergholz, Matthias and Karavaev, Konstantin and Sohal, Rakesh and Torche, Mohamed and Schmeißer, Dieter}, title = {Al-Oxynitride as a buffer layer for high-k dielectrics}, series = {Proceedings of 15th Workshop on Dielectrics in Microelectronics, Bad Saarow, 23 - 25 June 2008, Bad Saarow (Berlin)}, booktitle = {Proceedings of 15th Workshop on Dielectrics in Microelectronics, Bad Saarow, 23 - 25 June 2008, Bad Saarow (Berlin)}, pages = {161 -- 162}, language = {en} } @inproceedings{SohalHenkelMuelleretal., author = {Sohal, Rakesh and Henkel, Karsten and M{\"u}ller, Klaus and Schmeißer, Dieter}, title = {Growth and Characterization of 3C-SiC thin films on Si substrates}, series = {Verhandlungen der Deutschen Physikalischen Gesellschaft}, booktitle = {Verhandlungen der Deutschen Physikalischen Gesellschaft}, publisher = {Deutsche Physikalische Gesellschaft}, address = {Bad Honnef}, abstract = {This work reports on the growth and characterization of cubic silicon carbide thin films. A cold wall low pressure chemical vapour deposition (LPCVD) system has been used to grow the cubic silicon carbide. The two step method, carbonization and subsequent growth, has been used to grow good quality 3C-SiC thin films. The composition and structure of deposited thin films have been analysed by Fourier Transform Infrared Spectroscopy (FTIR), XPS and X-Ray Diffractometry (XRD). The structural quality of the films has been optimized as a function of substrate temperature during carbonization and growth. X-rays diffraction measurements shows that the grown layers are highly oriented crystalline cubic silicon carbide.}, language = {en} } @article{HenkelSohalSchmeisseretal., author = {Henkel, Karsten and Sohal, Rakesh and Schmeißer, Dieter and Schwiertz, Carola and Burkov, Yevgen and Torche, Mohamed}, title = {Al-oxynitride buffer layer facilities for PrOx/SiC interfaces}, language = {en} } @inproceedings{HenkelSohalTorcheetal., author = {Henkel, Karsten and Sohal, Rakesh and Torche, Mohamed and Schwiertz, Carola and Burkov, Yevgen and Schmeißer, Dieter}, title = {PrOx/AlON stacks as a high-k candidate on SiC}, series = {Verhandlungen der Deutschen Physikalischen Gesellschaft ; Reihe 6, Bd. 42}, booktitle = {Verhandlungen der Deutschen Physikalischen Gesellschaft ; Reihe 6, Bd. 42}, publisher = {Deutsche Physikalische Gesellschaft}, address = {Bad Honnef}, issn = {0420-0195}, pages = {S. 215}, abstract = {We study the chemical stability and electrical properties of Pr-oxides-SiC MIS stacks. In MISFET devices for high power applications the electric field scaling at the interface between semiconductor and insulator is determined by the ratio of their permittivity values. A high-k material can be used to optimize the performance of such devices. In previous studies we had to understand that the chemical reactivity of the PrOx/SiC interface causes a destructive interaction yielding silicate and graphite formation as well as poor electrical performance after direct deposition of PrOx onto SiC. Therefore we introduced an additional chemically inert layer and in this contribution we focus on PrOx/AlON as a suitable insulator stack. In our spectroscopic investigations we recognized a stable AlON/3C-SiC interface even for annealing steps up to 900∘C. First electrical characterizations are performed on Si substrates and we find a strong improvement in the leakage current by several orders of magnitude down to values of 10-7 A/cm2 at an EOT of 4nm and interface state densities of mean values of 5*1011/eVcm2. We also report on our ongoing electrical characterization of such stacks on SiC substrates. This work is supported by Deutsche Forschungsgemeinschaft within priority program 1157 (DSCH 745/9-2).}, language = {en} } @inproceedings{TallaridaSohalSchmeisser, author = {Tallarida, Massimo and Sohal, Rakesh and Schmeißer, Dieter}, title = {Resonant photoemission at the oxygen K edge as a tool to study the electronic properties of defects at SiO2/Si and SiO2/SiC interfaces}, language = {en} } @inproceedings{SohalTorcheSchmeisser, author = {Sohal, Rakesh and Torche, Mohamed and Schmeißer, Dieter}, title = {Al-Oxynitrides as a Buffer Layer for Pr2O3/SiC Interfaces}, language = {en} } @phdthesis{Sohal, author = {Sohal, Rakesh}, title = {CVD growth of (001) and (111) 3C-SiC epilayers and their interface reactivity with praseodymium oxide dielectric layers}, url = {http://nbn-resolving.de/urn:nbn:de:kobv:co1-opus-121}, language = {en} }