@misc{BergmannAyasseSchlipfetal., author = {Bergmann, Fritz and Ayasse, Markus and Schlipf, Jon and M{\"o}rz, Florian and Weißhaupt, David and Oehme, Michael and Prucnal, Slawomir and Kawaguchi, Yuma and Schwarz, Daniel and Fischer, Inga Anita and Schulze, J{\"o}rg}, title = {Plasmonic gratings from highly doped Ge1-ySny films on Si}, series = {Journal of Physics D: Applied Physics}, volume = {54}, journal = {Journal of Physics D: Applied Physics}, number = {44}, issn = {1361-6463}, language = {en} } @misc{XieBirowskaFunketal., author = {Xie, Yufang and Birowska, Magdalena and Funk, Hannes S. and Fischer, Inga Anita and Schwarz, Daniel and Schulze, J{\"o}rg and Zeng, Yu-Jia and Helm, Manfred and Zhou, Shengqiang and Prucnal, Slawomir}, title = {Tuning of Curie temperature in Mn5Ge3 films}, series = {Journal of Applied Physics}, volume = {131}, journal = {Journal of Applied Physics}, issn = {1089-7550}, doi = {10.1063/5.0066717}, pages = {105102-1 -- 105102-8}, language = {en} } @misc{XieLiBegezaetal., author = {Xie, Yufang and Li, Zichao and Begeza, Viktor and Funk, Hannes S. and Fischer, Inga Anita and Zeng, Yu-Jia and Helm, Manfred and Zhou, Shengqiang and Prucnal, Slawomir}, title = {Influence of fabrication parameters on the magnetic and structural properties of Mn5Ge3}, series = {Semiconductor Science and Technology}, volume = {37}, journal = {Semiconductor Science and Technology}, number = {6}, issn = {1361-6641}, doi = {10.1088/1361-6641/ac6689}, pages = {1 -- 8}, abstract = {Mn5Ge3 is a ferromagnetic material with the high potential for spintronic applications. Usually, it is grown by conventional solid state reaction of manganese with germanium using molecular beam epitaxy. Here, we report the structural and magnetic properties of Mn5Ge3 layers grown on Ge substrates using ultrafast-solid phase epitaxy (SPE) method. We investigate the influence of the substrate orientation, Mn layer thickness and annealing parameters on the crystallographic orientation and magnetization of Mn5Ge3. It is shown that after millisecond range SPE, Mn5Ge3 films always have a preferred (100) orientation whether grown on Ge (001) or (111) substrates, which determines the orientation of the magnetization easy axis lying in the film plane along c axis independent of the layer thickness. The Curie temperature of Mn5Ge3 weakly depends on fabrication parameters.}, language = {en} } @misc{SteuerSchwarzOehmeetal., author = {Steuer, Oliver and Schwarz, Daniel and Oehme, Michael and Schulze, J. and Maczko, H. and Kudrawiec, Robert and Fischer, Inga Anita and Heller, R. and H{\"u}bner, R. and Khan, M. M. and Georgiev, Yordan M. and Zhou, Shengqiang and Helm, M. and Prucnal, Slawomir}, title = {Band-gap and strain engineering in GeSn alloys using post-growth pulsed laser melting}, series = {Journal of Physics: Condensed Matter}, volume = {35}, journal = {Journal of Physics: Condensed Matter}, number = {5}, issn = {1361-648X}, doi = {10.1088/1361-648X/aca3ea}, language = {en} } @misc{BerkmannSteuerGanssetal., author = {Berkmann, Fritz and Steuer, Oliver and Ganss, Fabian and Prucnal, Slawomir and Schwarz, Daniel and Fischer, Inga Anita and Schulze, J{\"o}rg}, title = {Sharp MIR plasmonic modes in gratings made of heavily doped pulsed laser-melted Ge1-xSnx}, series = {Optical Materials Express}, volume = {13}, journal = {Optical Materials Express}, number = {3}, issn = {2159-3930}, doi = {10.1364/OME.479637}, pages = {752 -- 763}, language = {en} } @misc{WenShaikhSteueretal., author = {Wen, Shuyu and Shaikh, Mohd Saif and Steuer, Oliver and Prucnal, Slawomir and Grenzer, J{\"o}rg and H{\"u}bner, Ren{\´e} and Turek, Marcin and Pyszniak, Krzysztof and Reiter, Sebastian and Fischer, Inga Anita and Georgiev, Yordan M. and Helm, Manfred and Wu, Shaoteng and Luo, Jun-Wei and Zhou, Shengqiang and Berenc{\´e}n, Yonder}, title = {Room-temperature extended short-wave infrared GeSn photodetectors realized by ion beam techniques}, series = {Applied Physics Letters}, volume = {123}, journal = {Applied Physics Letters}, number = {8}, issn = {0003-6951}, doi = {10.1063/5.0166799}, pages = {1 -- 7}, abstract = {GeSn alloys hold great promise as high-performance, low-cost, near- and short-wavelength infrared photodetectors with the potential to replace the relatively expensive and currently market-dominant InGaAs- and InSb-based photodetectors. In this Letter, we demonstrate room-temperature GeSn pn photodetectors fabricated by a complementary metal-oxide-semiconductor compatible process, involving Sn and P ion implantation and flash-lamp annealing prior to device fabrication. The fabrication process enables the alloying of Ge with Sn at concentrations up to 4.5\% while maintaining the high-quality single-crystalline structure of the material. This allows us to create Ge0.955Sn0.045 pn photodetectors with a low dark current density of 12.8 mA/cm2 and a relatively high extended responsivity of 0.56 A/W at 1.71 μm. These results pave the way for the implementation of a cost-effective, scalable, and CMOS-compatible short-wavelength infrared detector technology.}, language = {en} }